Kai Masuda, Yoshiyuki Takahashi, Tsuyoshi Misawa, Norio Yamakawa, Thomas B. Scott, Mahmoud Bakr
Presented herein are the outcomes of an experimental test involving a pioneering portable-active interrogation system designed for the nondestructive detection of special nuclear materials (SNMs). The system relies on the threshold energy neutron analysis concept and incorporates a portable deuterium–deuterium (DD) neutron generator producing a particle intensity of 5 × 107 n/s, coupled with three arrays of tensioned metastable fluid detectors (TMFDs) to detect secondary neutrons from the fissile material. In the presence of the fissile material, prompt fission neutrons are emitted, with an average energy of approximately 2 MeV, and around 30% of these neutrons have energies above that of the DD neutron source (2.45 MeV). The detection of a statistically significant neutron population exceeding this threshold firmly indicates the presence of SNM. TMFDs exhibit high sensitivity in efficiently detecting neutrons above the threshold while adeptly discriminating against neutrons below the threshold as well as gamma rays. This unique feature allows the interrogation system to maintain a lightweight profile without necessitating substantial shielding materials. The validation experiments involved the placement of 70 or 140 g masses of U-235 within a 1 m3 inspection volume. Measurements were carried out over 30 min intervals, repeated numerous times, both with and without U-235, at a DD neutron source intensity of 8 × 105 n/sec. Experimental count rates with natural uranium (NU) are consistently above those without NU. The probability of detection (PD) and probability of false alarm (PFA) were assessed utilizing these count rates. The DD neutron source intensity and inspection time were normalized at 5 × 107 n/sec and 90 s, respectively. The results indicated a PD of approximately 74% and 98% for detecting 70 and 140 g of U-235, respectively, with a PFA of <5%. These promising outcomes align with the specified PD (>90%) and PFA (<5%) targets outlined in ANSI standards.
{"title":"Fusion neutron source and array of particle detectors for nondestructive interrogation of special nuclear materials","authors":"Kai Masuda, Yoshiyuki Takahashi, Tsuyoshi Misawa, Norio Yamakawa, Thomas B. Scott, Mahmoud Bakr","doi":"10.1063/5.0225179","DOIUrl":"https://doi.org/10.1063/5.0225179","url":null,"abstract":"Presented herein are the outcomes of an experimental test involving a pioneering portable-active interrogation system designed for the nondestructive detection of special nuclear materials (SNMs). The system relies on the threshold energy neutron analysis concept and incorporates a portable deuterium–deuterium (DD) neutron generator producing a particle intensity of 5 × 107 n/s, coupled with three arrays of tensioned metastable fluid detectors (TMFDs) to detect secondary neutrons from the fissile material. In the presence of the fissile material, prompt fission neutrons are emitted, with an average energy of approximately 2 MeV, and around 30% of these neutrons have energies above that of the DD neutron source (2.45 MeV). The detection of a statistically significant neutron population exceeding this threshold firmly indicates the presence of SNM. TMFDs exhibit high sensitivity in efficiently detecting neutrons above the threshold while adeptly discriminating against neutrons below the threshold as well as gamma rays. This unique feature allows the interrogation system to maintain a lightweight profile without necessitating substantial shielding materials. The validation experiments involved the placement of 70 or 140 g masses of U-235 within a 1 m3 inspection volume. Measurements were carried out over 30 min intervals, repeated numerous times, both with and without U-235, at a DD neutron source intensity of 8 × 105 n/sec. Experimental count rates with natural uranium (NU) are consistently above those without NU. The probability of detection (PD) and probability of false alarm (PFA) were assessed utilizing these count rates. The DD neutron source intensity and inspection time were normalized at 5 × 107 n/sec and 90 s, respectively. The results indicated a PD of approximately 74% and 98% for detecting 70 and 140 g of U-235, respectively, with a PFA of &lt;5%. These promising outcomes align with the specified PD (&gt;90%) and PFA (&lt;5%) targets outlined in ANSI standards.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"25 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142260294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pengcheng Hu, Binxiang Huang, Daniel Bremecker, Jurij Koruza, Karsten Albe, Andreas Klein
The (electro)chemical stability of undoped and Zn-doped 0.94Na1/2Bi1/2TiO3–0.06BaTiO3 lead-free piezoceramics (NBT–6BT) was studied. For this purpose, the Fermi level at the interface between NBT–6BT and Sn-doped In2O3 (ITO) electrode is varied by gradually reducing the ITO film either by annealing in vacuum or by applying a voltage across a Pt/NBT–6BT/ITO. The chemical and electronic changes are monitored in situ by x-ray photoelectron spectroscopy. The experiments reveal the formation of metallic Bi when the Fermi level is reaching a value of 2.23 ± 0.10 eV above the valence band maximum, while no reduction of Ti is observed. The electrochemical reduction of Bi constitutes an upper limit of the Fermi level at ≈1 eV below the conduction band minimum. High electron concentrations in the conduction band and a contribution of free electrons to the electrical conductivity of NBT–6BT can, therefore, be excluded. The reduction occurs for an ITO work function of 4.2–4.3 eV. As typical electrode materials such as Ag, Cu, Ni, or Pt have higher work functions, an electrochemical instability of the electrode interfaces in ceramic capacitors is not expected. Under the given experimental conditions (350 °C, electric fields <40 V/mm), no degradation of resistance and no enrichment of Na at the interface are observed.
研究了未掺杂和掺锌的 0.94Na1/2Bi1/2TiO3-0.06BaTiO3 无铅压电陶瓷（NBT-6BT）的（电）化学稳定性。为此，通过在真空中退火或在 Pt/NBT-6BT/ITO 上施加电压来逐渐还原 ITO 薄膜，从而改变 NBT-6BT 和掺杂锡的 In2O3（ITO）电极之间界面的费米级。化学和电子变化通过 X 射线光电子能谱进行现场监测。实验表明，当费米级达到价带最大值以上 2.23 ± 0.10 eV 时，就会形成金属铋，而钛则不会被还原。Bi 的电化学还原构成了费米级的上限，即低于导带最小值 ≈1 eV。因此，NBT-6BT 的导电性可以排除导带中电子浓度过高和自由电子的影响。当 ITO 的功函数为 4.2-4.3 eV 时，导电率会降低。由于 Ag、Cu、Ni 或 Pt 等典型电极材料具有更高的功函数，因此预计陶瓷电容器的电极界面不会出现电化学不稳定现象。在给定的实验条件下（350 °C，电场<40 V/mm），没有观察到电阻下降和界面上 Na 的富集。
{"title":"Fermi level limitation in Na1/2Bi1/2TiO3–BaTiO3 piezoceramics by electrochemical reduction of Bi","authors":"Pengcheng Hu, Binxiang Huang, Daniel Bremecker, Jurij Koruza, Karsten Albe, Andreas Klein","doi":"10.1063/5.0227698","DOIUrl":"https://doi.org/10.1063/5.0227698","url":null,"abstract":"The (electro)chemical stability of undoped and Zn-doped 0.94Na1/2Bi1/2TiO3–0.06BaTiO3 lead-free piezoceramics (NBT–6BT) was studied. For this purpose, the Fermi level at the interface between NBT–6BT and Sn-doped In2O3 (ITO) electrode is varied by gradually reducing the ITO film either by annealing in vacuum or by applying a voltage across a Pt/NBT–6BT/ITO. The chemical and electronic changes are monitored in situ by x-ray photoelectron spectroscopy. The experiments reveal the formation of metallic Bi when the Fermi level is reaching a value of 2.23 ± 0.10 eV above the valence band maximum, while no reduction of Ti is observed. The electrochemical reduction of Bi constitutes an upper limit of the Fermi level at ≈1 eV below the conduction band minimum. High electron concentrations in the conduction band and a contribution of free electrons to the electrical conductivity of NBT–6BT can, therefore, be excluded. The reduction occurs for an ITO work function of 4.2–4.3 eV. As typical electrode materials such as Ag, Cu, Ni, or Pt have higher work functions, an electrochemical instability of the electrode interfaces in ceramic capacitors is not expected. Under the given experimental conditions (350 °C, electric fields &lt;40 V/mm), no degradation of resistance and no enrichment of Na at the interface are observed.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"50 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142260286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. J. Richter, G. Mihajlović, R. V. Chopdekar, W. Jung, J. Gibbons, N. D. Melendez, M. K. Grobis, T. S. Santos
We report device-level damping measurements using spin-torque driven ferromagnetic resonance on perpendicular magnetic random-access memory cells. It is shown that thermal agitation enhances the apparent damping for cells smaller than about 55 nm. The effect is fundamental and does not reflect a true damping increase. In addition to the thermal effect, it is still found that device-level damping is higher than film-level damping and increases with decreasing cell size. This is attributed to edge damage caused by device patterning.
{"title":"Thermal effects on damping determination of perpendicular MRAM devices by spin-torque ferromagnetic resonance","authors":"H. J. Richter, G. Mihajlović, R. V. Chopdekar, W. Jung, J. Gibbons, N. D. Melendez, M. K. Grobis, T. S. Santos","doi":"10.1063/5.0231388","DOIUrl":"https://doi.org/10.1063/5.0231388","url":null,"abstract":"We report device-level damping measurements using spin-torque driven ferromagnetic resonance on perpendicular magnetic random-access memory cells. It is shown that thermal agitation enhances the apparent damping for cells smaller than about 55 nm. The effect is fundamental and does not reflect a true damping increase. In addition to the thermal effect, it is still found that device-level damping is higher than film-level damping and increases with decreasing cell size. This is attributed to edge damage caused by device patterning.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"41 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142260287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Acoustic levitation is widely used in non-container measurement and non-contact manipulation. Particles in the single-axis acoustic levitation are easily unstable in the radial direction under external perturbations. In order to explore the instability in the acoustic levitation during radial perturbations, a nonlinear acoustic levitation model considering the coupling of radial and axial vibration is proposed to analyze the dominant factors influencing the levitation stability, an acoustic levitation system consisting of a transducer and a plane reflector is established, and high-speed photography is used to observe the vibration behavior of the particle with large radial vibration and the levitation stability. The simulation results are compared and verified with the experiments, which indicate that the reduction in axial trapping stiffness due to radial vibration plays a vital role in the levitation instability. The present model can characterize the radial anti-interference ability of different levitators as well as predict the movement trajectories of levitated particles after being disturbed, which is helpful to optimize the design of acoustic levitators and provide guidance for acoustic manipulation.
{"title":"On the instability of single-axis acoustic levitation under radial perturbations","authors":"Xiaozhen Wang, Qin Chang, Pengfei Wu, Delong Xu, Weijun Lin, Hao Chen","doi":"10.1063/5.0218163","DOIUrl":"https://doi.org/10.1063/5.0218163","url":null,"abstract":"Acoustic levitation is widely used in non-container measurement and non-contact manipulation. Particles in the single-axis acoustic levitation are easily unstable in the radial direction under external perturbations. In order to explore the instability in the acoustic levitation during radial perturbations, a nonlinear acoustic levitation model considering the coupling of radial and axial vibration is proposed to analyze the dominant factors influencing the levitation stability, an acoustic levitation system consisting of a transducer and a plane reflector is established, and high-speed photography is used to observe the vibration behavior of the particle with large radial vibration and the levitation stability. The simulation results are compared and verified with the experiments, which indicate that the reduction in axial trapping stiffness due to radial vibration plays a vital role in the levitation instability. The present model can characterize the radial anti-interference ability of different levitators as well as predict the movement trajectories of levitated particles after being disturbed, which is helpful to optimize the design of acoustic levitators and provide guidance for acoustic manipulation.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"24 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142260290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We present a simple implicit solution for the time-dependent trajectory of a thin Asay foil ejecta diagnostic for the general case where the impinging ejecta cloud is generated by a source function characterized by an arbitrary (sustained) time dependence and a time-independent (stationary) particle velocity distribution. In the limit that the source function time dependence becomes a delta function, this solution—which is amenable to rapid numerical calculations of arbitrary accuracy—exactly recovers a previously published solution for the special case of instantaneous ejecta production. We also derive simple expressions for the free-surface arrival (catch-up) time as well as the true ejecta areal mass accumulation on the accelerating foil and place bounds on the level of error incurred when applying instant-production mass solutions to a sustained-production trajectory. We demonstrate these solutions with example calculations for hypothetical source functions spanning a wide range of ejecta production durations, velocity distributions, and temporal behaviors. These calculations demonstrate how the foil trajectory is often insensitive to the temporal dependence of the source function, instead being dominated by the velocity distribution. We quantify this insensitivity using a “compatibility score” metric. Under certain conditions, one may capitalize upon this insensitivity to obtain a good approximation of the second integral of the velocity distribution from the observed foil trajectory.
{"title":"An implicit solution for Asay foil trajectories generated by separable, sustained-production ejecta source models","authors":"I. L. Tregillis, Aaron Koskelo","doi":"10.1063/5.0228457","DOIUrl":"https://doi.org/10.1063/5.0228457","url":null,"abstract":"We present a simple implicit solution for the time-dependent trajectory of a thin Asay foil ejecta diagnostic for the general case where the impinging ejecta cloud is generated by a source function characterized by an arbitrary (sustained) time dependence and a time-independent (stationary) particle velocity distribution. In the limit that the source function time dependence becomes a delta function, this solution—which is amenable to rapid numerical calculations of arbitrary accuracy—exactly recovers a previously published solution for the special case of instantaneous ejecta production. We also derive simple expressions for the free-surface arrival (catch-up) time as well as the true ejecta areal mass accumulation on the accelerating foil and place bounds on the level of error incurred when applying instant-production mass solutions to a sustained-production trajectory. We demonstrate these solutions with example calculations for hypothetical source functions spanning a wide range of ejecta production durations, velocity distributions, and temporal behaviors. These calculations demonstrate how the foil trajectory is often insensitive to the temporal dependence of the source function, instead being dominated by the velocity distribution. We quantify this insensitivity using a “compatibility score” metric. Under certain conditions, one may capitalize upon this insensitivity to obtain a good approximation of the second integral of the velocity distribution from the observed foil trajectory.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"210 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142269455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Moses O. Nnaji, David A. Tavakoli, Dale A. Hitchcock, Eric M. Vogel
Mn+1AXn-phase Ti2AlN thin-films were synthesized using reactive sputtering-based methods involving the deposition of single-layer TiAlN, and Ti/AlN and TiN/TiAl multilayers of various modulation periods at ambient temperature and subsequent annealing at elevated temperatures. Ex situ and in situ x-ray diffraction measurements were used to characterize the Ti2AlN formation temperature and phase fraction. During annealing, Ti/AlN multilayers yielded Ti2AlN at a significantly lower in situ temperature of 650 °C compared to TiN/TiAl multilayers or single-layer TiAlN (750 °C). The results suggest a reactive multilayer mechanism whereby distinct Ti and AlN layers react readily to release exothermic energy resulting in lower phase transition temperatures compared to TiN and TiAl layers or mixed TiAlN. With a modulation period of 5 nm, however, Ti/AlN multilayers yielded Ti2AlN at a higher temperature of 750 °C, indicating a disruption of the reactive multilayer mechanism due to a higher fraction of low-enthalpy interfacial TiAlN within the film.
采用基于反应溅射的方法合成了锰+1AXn 相 Ti2AlN 薄膜，包括在环境温度下沉积单层 TiAlN 以及不同调制周期的 Ti/AlN 和 TiN/TiAl 多层膜，然后在高温下退火。利用原位和原位 X 射线衍射测量来确定 Ti2AlN 的形成温度和相分数。在退火过程中，与 TiN/TiAl 多层膜或单层 TiAlN（750 ℃）相比，Ti/AlN 多层膜在 650 ℃ 的原位温度下生成了 Ti2AlN。结果表明了一种反应性多层机制，即不同的 Ti 和 AlN 层容易发生反应，释放放热能量，从而导致相变温度低于 TiN 和 TiAl 层或混合 TiAlN。然而，当调制周期为 5 nm 时，Ti/AlN 多层在 750 °C 的较高温度下产生了 Ti2AlN，这表明由于薄膜中低焓界面 TiAlN 的比例较高，反应性多层机制受到了破坏。
{"title":"Low-temperature formation of Ti2AlN during post-deposition annealing of reactive multilayer systems","authors":"Moses O. Nnaji, David A. Tavakoli, Dale A. Hitchcock, Eric M. Vogel","doi":"10.1063/5.0230405","DOIUrl":"https://doi.org/10.1063/5.0230405","url":null,"abstract":"Mn+1AXn-phase Ti2AlN thin-films were synthesized using reactive sputtering-based methods involving the deposition of single-layer TiAlN, and Ti/AlN and TiN/TiAl multilayers of various modulation periods at ambient temperature and subsequent annealing at elevated temperatures. Ex situ and in situ x-ray diffraction measurements were used to characterize the Ti2AlN formation temperature and phase fraction. During annealing, Ti/AlN multilayers yielded Ti2AlN at a significantly lower in situ temperature of 650 °C compared to TiN/TiAl multilayers or single-layer TiAlN (750 °C). The results suggest a reactive multilayer mechanism whereby distinct Ti and AlN layers react readily to release exothermic energy resulting in lower phase transition temperatures compared to TiN and TiAl layers or mixed TiAlN. With a modulation period of 5 nm, however, Ti/AlN multilayers yielded Ti2AlN at a higher temperature of 750 °C, indicating a disruption of the reactive multilayer mechanism due to a higher fraction of low-enthalpy interfacial TiAlN within the film.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"29 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142260292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Magnus Hörnqvist Colliander, Dörthe Haase, Konstantin Glazyrin, Aina Edgren, Pan Wang, Malcolm Guthrie, Sheng Guo
Pressure-induced polymorphism has recently been demonstrated in several high entropy alloys. This offers a new window into the much-debated issue of phase selection and stability in these systems. Here, we examine the effect of cryogenic temperatures on the pressure-induced transition from face centered cubic to hexagonal close-packed structures of the prototype CoCrFeMnNi (Cantor) alloy. We observe a reduction in the critical pressure for the onset of the polymorphic transition as the temperature decreases, confirming the progressive stabilization of the hexagonal phase with decreasing temperature previously predicted by ab initio calculations accounting for magnetic interactions. We argue that in situ high-pressure experiments at cryogenic temperatures, which suppress time-dependent transformation triggered at higher temperatures, present a unique opportunity to significantly improve our understanding of these complex alloys.
最近在几种高熵合金中证实了压力诱导的多态性。这为研究这些系统中备受争议的相选择和稳定性问题提供了一个新的视角。在这里，我们研究了低温对钴铬铁镍（Cantor）合金原型从面心立方到六方紧密堆积结构的压力诱导转变的影响。我们观察到，随着温度的降低，多晶体转变开始的临界压力也随之降低，这证实了之前通过考虑磁相互作用的 ab initio 计算所预测的六方相随温度降低而逐渐稳定的现象。我们认为，低温下的原位高压实验抑制了在较高温度下引发的随时间变化的转变，为我们显著提高对这些复杂合金的认识提供了一个独特的机会。
{"title":"Cryogenic temperatures promote the pressure-induced polymorphic transition in CoCrFeMnNi high entropy alloy","authors":"Magnus Hörnqvist Colliander, Dörthe Haase, Konstantin Glazyrin, Aina Edgren, Pan Wang, Malcolm Guthrie, Sheng Guo","doi":"10.1063/5.0220107","DOIUrl":"https://doi.org/10.1063/5.0220107","url":null,"abstract":"Pressure-induced polymorphism has recently been demonstrated in several high entropy alloys. This offers a new window into the much-debated issue of phase selection and stability in these systems. Here, we examine the effect of cryogenic temperatures on the pressure-induced transition from face centered cubic to hexagonal close-packed structures of the prototype CoCrFeMnNi (Cantor) alloy. We observe a reduction in the critical pressure for the onset of the polymorphic transition as the temperature decreases, confirming the progressive stabilization of the hexagonal phase with decreasing temperature previously predicted by ab initio calculations accounting for magnetic interactions. We argue that in situ high-pressure experiments at cryogenic temperatures, which suppress time-dependent transformation triggered at higher temperatures, present a unique opportunity to significantly improve our understanding of these complex alloys.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"215 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142260334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Physical processes involving hot electrons, including their generation, transport, injection, and relaxation, have been an extensive area of research. The most widely utilized method for actuating the creation of hot electrons involves the excitation of plasmonic modes followed by their non-radiative decay, channeling the energy into these energetic carriers. Since plasmonics has already evolved into a mature field of scientific exploration, active plasmonic devices serve as an ideal platform to study hot-electron physics. In this Perspective article, we will provide the reader with a comprehensive outline of the physics underlying hot-electron dynamics. Emphasis will be placed on the characteristic timescales involved with the lifecycle of hot electrons, the generation and decay mechanisms of surface plasmon-induced hot electrons, and the material platforms suitable for such a study. Then, we will move on to discuss different temperature models used to explain the evolution of hot electrons and the changes in the optical properties of the materials they are generated in or injected into. Finally, we will focus on some of the interesting optical phenomena occurring at ultrafast timescales mediated by hot-carrier dynamics. Such a discussion is expected to incorporate valuable insights into our understanding of the synergistic relationship between hot-electron dynamics and active plasmonics, thereby paving the way for novel applications involving optoelectronics and energy conversion.
{"title":"Exploring the synergy between hot-electron dynamics and active plasmonics: A perspective","authors":"Anjan Goswami, Andrew S. Kim, Wenshan Cai","doi":"10.1063/5.0216205","DOIUrl":"https://doi.org/10.1063/5.0216205","url":null,"abstract":"Physical processes involving hot electrons, including their generation, transport, injection, and relaxation, have been an extensive area of research. The most widely utilized method for actuating the creation of hot electrons involves the excitation of plasmonic modes followed by their non-radiative decay, channeling the energy into these energetic carriers. Since plasmonics has already evolved into a mature field of scientific exploration, active plasmonic devices serve as an ideal platform to study hot-electron physics. In this Perspective article, we will provide the reader with a comprehensive outline of the physics underlying hot-electron dynamics. Emphasis will be placed on the characteristic timescales involved with the lifecycle of hot electrons, the generation and decay mechanisms of surface plasmon-induced hot electrons, and the material platforms suitable for such a study. Then, we will move on to discuss different temperature models used to explain the evolution of hot electrons and the changes in the optical properties of the materials they are generated in or injected into. Finally, we will focus on some of the interesting optical phenomena occurring at ultrafast timescales mediated by hot-carrier dynamics. Such a discussion is expected to incorporate valuable insights into our understanding of the synergistic relationship between hot-electron dynamics and active plasmonics, thereby paving the way for novel applications involving optoelectronics and energy conversion.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"17 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142260337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Radio-frequency (RF) cavities, previously employed in particle physics, quantum computing, and gravitational wave research, offer unique advantages in terms of sensitivity and non-invasiveness as a method of sensing motion in both macroscopic and microscopic systems. This research aims to address how an RF cavity can effectively detect and characterize the low-frequency vibratory motion of a room-temperature mm-scale levitated particle. In this case, the particle in question is a diamagnetically levitated slab of highly oriented pyrolytic graphite. Cavity-based identification of the slab’s rigid-body modes is substantiated by calculations of the force acting on the particle and validated through slow-motion video object tracking. We find that this system can accurately measure oscillations in all six center-of-mass degrees of freedom. Calculations indicate that this system could potentially detect forces on the scale of tens of femto-Newtons and center of mass displacements of less than 10 nm. This work provides a non-invasive method of conducting position and vibration measurements in the field of levitodynamics without the ultra-cold temperatures or bulky precision laser setups that superconducting quantum interference devices and conventional interferometric methods utilize.
{"title":"Characterizing low-frequency vibratory motion with radio-frequency cavities","authors":"Harold R. Hart-Alesch, Jay E. Sharping","doi":"10.1063/5.0219033","DOIUrl":"https://doi.org/10.1063/5.0219033","url":null,"abstract":"Radio-frequency (RF) cavities, previously employed in particle physics, quantum computing, and gravitational wave research, offer unique advantages in terms of sensitivity and non-invasiveness as a method of sensing motion in both macroscopic and microscopic systems. This research aims to address how an RF cavity can effectively detect and characterize the low-frequency vibratory motion of a room-temperature mm-scale levitated particle. In this case, the particle in question is a diamagnetically levitated slab of highly oriented pyrolytic graphite. Cavity-based identification of the slab’s rigid-body modes is substantiated by calculations of the force acting on the particle and validated through slow-motion video object tracking. We find that this system can accurately measure oscillations in all six center-of-mass degrees of freedom. Calculations indicate that this system could potentially detect forces on the scale of tens of femto-Newtons and center of mass displacements of less than 10 nm. This work provides a non-invasive method of conducting position and vibration measurements in the field of levitodynamics without the ultra-cold temperatures or bulky precision laser setups that superconducting quantum interference devices and conventional interferometric methods utilize.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"41 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142260340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Vadim Emtsev, Nikolay Abrosimov, Vitalii Kozlovski, Stanislav Lastovskii, Gagik Oganesyan, Dmitrii Poloskin
Electrical properties of defects produced in strongly bismuth-doped silicon by 15 MeV protons are investigated in detail. Electrical measurements on irradiated samples by means of the van der Pauw technique are conducted over a wide temperature range of 20–300 K to furnish information on radiation-produced complexes. It is shown that the properties of the dominant bismuth-related defects are the same as earlier found in the electron-irradiated material. These complexes are tentatively identified as bismuth–vacancy pairs being deep donors. Their atomic configuration appears to be radically different from what is known about similar vacancy-related defects with other group-V impurities. These bismuth-related pairs are stable up to T ≈ 300 °C. Some special features of defect formation and annealing processes of radiation defects in bismuth-doped silicon subjected to electron and proton irradiation are discussed. This information may be of advantage in modeling impurity-related complexes containing oversized impurity atoms in silicon.
详细研究了 15 MeV 质子在强掺铋硅中产生的缺陷的电特性。在 20-300 K 的宽温度范围内，通过范德保技术对辐照样品进行了电学测量，以提供有关辐照产生的复合物的信息。结果表明，主要的铋相关缺陷的性质与之前在电子辐照材料中发现的相同。这些络合物被初步确定为铋空位对的深度供体。它们的原子构型似乎与其他 V 族杂质的类似空位相关缺陷完全不同。这些双铋空位对在温度≈300 ℃时是稳定的。本文讨论了掺铋硅在电子和质子辐照下的缺陷形成和辐射缺陷退火过程的一些特点。这些信息可能有助于模拟硅中含有超大杂质原子的杂质相关复合物。
{"title":"Bismuth-related defects in n-type silicon irradiated with protons: A comparison to similar defects formed under electron irradiation","authors":"Vadim Emtsev, Nikolay Abrosimov, Vitalii Kozlovski, Stanislav Lastovskii, Gagik Oganesyan, Dmitrii Poloskin","doi":"10.1063/5.0226406","DOIUrl":"https://doi.org/10.1063/5.0226406","url":null,"abstract":"Electrical properties of defects produced in strongly bismuth-doped silicon by 15 MeV protons are investigated in detail. Electrical measurements on irradiated samples by means of the van der Pauw technique are conducted over a wide temperature range of 20–300 K to furnish information on radiation-produced complexes. It is shown that the properties of the dominant bismuth-related defects are the same as earlier found in the electron-irradiated material. These complexes are tentatively identified as bismuth–vacancy pairs being deep donors. Their atomic configuration appears to be radically different from what is known about similar vacancy-related defects with other group-V impurities. These bismuth-related pairs are stable up to T ≈ 300 °C. Some special features of defect formation and annealing processes of radiation defects in bismuth-doped silicon subjected to electron and proton irradiation are discussed. This information may be of advantage in modeling impurity-related complexes containing oversized impurity atoms in silicon.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"11 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142269456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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