Pub Date : 1997-07-21DOI: 10.1109/IPFA.1997.638192
T. Yeoh
Building in reliability during ESD design layout is key to the success of product design and development. Due to the limitations of automated layout checkers for ESD, knowledge of fundamental device physics, ESD and stress environments are essential.
{"title":"Building in reliability during ESD design layout","authors":"T. Yeoh","doi":"10.1109/IPFA.1997.638192","DOIUrl":"https://doi.org/10.1109/IPFA.1997.638192","url":null,"abstract":"Building in reliability during ESD design layout is key to the success of product design and development. Due to the limitations of automated layout checkers for ESD, knowledge of fundamental device physics, ESD and stress environments are essential.","PeriodicalId":159177,"journal":{"name":"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117279164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-07-21DOI: 10.1109/IPFA.1997.638211
C. Premachandran, E.M. Palmeda, T. C. Chai
SIP packages were found to be susceptible to lateral die crack during assembly process. An investigation into the lateral die crack has led to better understanding of the possible failure mechanism and solutions for improvement have been found. In this study both experimental and FEA simulation were carried out. The simulated results can correlate well with experimental observation. Based on this work the design methodology for the SIP package have been improved. It is possible to build SIP packages with better resistant to lateral die crack and hence further enhance its quality and reliability.
{"title":"Investigation for lateral diecrack on SIP power device","authors":"C. Premachandran, E.M. Palmeda, T. C. Chai","doi":"10.1109/IPFA.1997.638211","DOIUrl":"https://doi.org/10.1109/IPFA.1997.638211","url":null,"abstract":"SIP packages were found to be susceptible to lateral die crack during assembly process. An investigation into the lateral die crack has led to better understanding of the possible failure mechanism and solutions for improvement have been found. In this study both experimental and FEA simulation were carried out. The simulated results can correlate well with experimental observation. Based on this work the design methodology for the SIP package have been improved. It is possible to build SIP packages with better resistant to lateral die crack and hence further enhance its quality and reliability.","PeriodicalId":159177,"journal":{"name":"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115809234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-07-21DOI: 10.1109/IPFA.1997.638191
C.K. Lakshminarayan, S. Pabbisetty, C. Han
This paper deals with the basic concepts of signature analysis, and will attempt to demonstrate how its implementation would enable efficient utilization of failure analysis engineering resources to analyze field failures and avoid repetitive analyses. This would accomplish the dual objective of improved customer satisfaction and reduced cycle time. Signature analysis methodology can be used in Failure Analysis, Design, Product, and Customer Quality and Reliability Engineering group applications. Starting with definitions, purpose, and various possible scenarios, a formal mathematical framework is developed for computing sample sizes and establishing confidence levels when the failures occur at random or occur in clusters.
{"title":"Signature analysis based IC diagnostics-a statistician's perspective","authors":"C.K. Lakshminarayan, S. Pabbisetty, C. Han","doi":"10.1109/IPFA.1997.638191","DOIUrl":"https://doi.org/10.1109/IPFA.1997.638191","url":null,"abstract":"This paper deals with the basic concepts of signature analysis, and will attempt to demonstrate how its implementation would enable efficient utilization of failure analysis engineering resources to analyze field failures and avoid repetitive analyses. This would accomplish the dual objective of improved customer satisfaction and reduced cycle time. Signature analysis methodology can be used in Failure Analysis, Design, Product, and Customer Quality and Reliability Engineering group applications. Starting with definitions, purpose, and various possible scenarios, a formal mathematical framework is developed for computing sample sizes and establishing confidence levels when the failures occur at random or occur in clusters.","PeriodicalId":159177,"journal":{"name":"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125359521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IPFA.1997.638219
Chun-Sheng Liu, Charng-E Peng, Chen-Chung Hsu
As the CMOS is scaling down quickly, the accurate and precise diagnosis of the process failure mechanisms in the ULSI circuits becomes more difficult and time consuming. In this paper, a new failure analysis technique for ULSI process defects using the back side emission microscopy is proposed. The real location of the defect site under the metal layer can be detected exactly by this new technique.
{"title":"Identification of process defects using back side emission microscopy","authors":"Chun-Sheng Liu, Charng-E Peng, Chen-Chung Hsu","doi":"10.1109/IPFA.1997.638219","DOIUrl":"https://doi.org/10.1109/IPFA.1997.638219","url":null,"abstract":"As the CMOS is scaling down quickly, the accurate and precise diagnosis of the process failure mechanisms in the ULSI circuits becomes more difficult and time consuming. In this paper, a new failure analysis technique for ULSI process defects using the back side emission microscopy is proposed. The real location of the defect site under the metal layer can be detected exactly by this new technique.","PeriodicalId":159177,"journal":{"name":"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121872609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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