Pub Date : 2025-09-19DOI: 10.1109/JMEMS.2025.3608938
Chen Wang;Appo van der Wiel;Grim Keulemans;Ben Maes;Michiel Gidts
This paper describes two fast and accurate characterization methods for micro-electromechanical systems (MEMS) pressure sensors without stabilizing environmental parameters. The $1^{mathrm {st}}$ method uses the time logging information of the acquired measurement data (time-based method). The $2^{mathrm {nd}}$ method is based on forcing and finding inflection data points (‘Echternach’ method). A MEMS piezoresistive pressure sensor was used to demonstrate the effectiveness of the two methods. The time-based characterization method reduced the characterization time by 66 times and increased the number of data samples 5-fold compared to a conventional method. The mismatches between the time-based and conventional methods were 0.015% full scale (FS, 1.7 bar) and 0.022% FS in terms of sensitivity and offset of the pressure sensor, respectively. Also, the ‘Echternach’ characterization method reduced the characterization time by 11 times and increased the number of data samples by 2.5 times compared to the conventional method. The mismatches between the ‘Echternach’ and the conventional methods were 0.059% FS and 0.012% FS in terms of sensitivity and offset of the pressure sensor, respectively. [2025-0040]
{"title":"Rapid and Precise Testing Techniques for MEMS Pressure Sensors Without Input Stabilization","authors":"Chen Wang;Appo van der Wiel;Grim Keulemans;Ben Maes;Michiel Gidts","doi":"10.1109/JMEMS.2025.3608938","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3608938","url":null,"abstract":"This paper describes two fast and accurate characterization methods for micro-electromechanical systems (MEMS) pressure sensors without stabilizing environmental parameters. The <inline-formula> <tex-math>$1^{mathrm {st}}$ </tex-math></inline-formula> method uses the time logging information of the acquired measurement data (time-based method). The <inline-formula> <tex-math>$2^{mathrm {nd}}$ </tex-math></inline-formula> method is based on forcing and finding inflection data points (‘Echternach’ method). A MEMS piezoresistive pressure sensor was used to demonstrate the effectiveness of the two methods. The time-based characterization method reduced the characterization time by 66 times and increased the number of data samples 5-fold compared to a conventional method. The mismatches between the time-based and conventional methods were 0.015% full scale (FS, 1.7 bar) and 0.022% FS in terms of sensitivity and offset of the pressure sensor, respectively. Also, the ‘Echternach’ characterization method reduced the characterization time by 11 times and increased the number of data samples by 2.5 times compared to the conventional method. The mismatches between the ‘Echternach’ and the conventional methods were 0.059% FS and 0.012% FS in terms of sensitivity and offset of the pressure sensor, respectively. [2025-0040]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 6","pages":"802-810"},"PeriodicalIF":3.1,"publicationDate":"2025-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145652189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-19DOI: 10.1109/JMEMS.2025.3605143
Longlong Li;Yuhao Xiao;Guoqiang Wu
This work demonstrates an effective approach to enhance the quality factor (Q) and reduce the temperature coefficient of frequency (TCF) for piezoelectric MEMS resonators via mechanical coupling. The reported resonator is composed of two identical single-crystal silicon (SCS) disks coupled by a SCS rectangle plate with piezoelectric stacks positioned above. During operation, the plate is piezoelectrically excited into vibrating in width-extensional (WE) mode and two disks are forced into vibrating in radial breathing (RB) mode by mechanical coupling. The plate and two disks could be viewed as two types of individual resonators. Although the Q and TCF of them are quite different due to the mode difference and the presence of piezoelectric stacks on the plate, they can vibrate synchronously under the same resonant frequency at proper given sizes. Hence, the Q and TCF of the coupled resonator could be manipulated by adjusting the effective mass ratio between two coupling parts. Experiment results illustrate that the fabricated coupled resonator resonates at 25.202 MHz with an unloaded Q of 80695 and frequency shifts of ±55 ppm over the temperature range of −40 °C to 85 °C. Compared to a standalone WE resonator fabricated under the same conditions, this represents a 2.44-fold increase in Q${}_{textbf {un}}$ and a 2.5-fold reduction in frequency drifts, underscoring the effectiveness of the mechanical coupling approach in optimizing resonator performance. [2025-0077]
{"title":"Q Enhancement and TCF Reduction for Piezoelectric MEMS Resonators via Mechanical Coupling","authors":"Longlong Li;Yuhao Xiao;Guoqiang Wu","doi":"10.1109/JMEMS.2025.3605143","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3605143","url":null,"abstract":"This work demonstrates an effective approach to enhance the quality factor (<italic>Q</i>) and reduce the temperature coefficient of frequency (<italic>TCF</i>) for piezoelectric MEMS resonators via mechanical coupling. The reported resonator is composed of two identical single-crystal silicon (SCS) disks coupled by a SCS rectangle plate with piezoelectric stacks positioned above. During operation, the plate is piezoelectrically excited into vibrating in width-extensional (WE) mode and two disks are forced into vibrating in radial breathing (RB) mode by mechanical coupling. The plate and two disks could be viewed as two types of individual resonators. Although the <italic>Q</i> and <italic>TCF</i> of them are quite different due to the mode difference and the presence of piezoelectric stacks on the plate, they can vibrate synchronously under the same resonant frequency at proper given sizes. Hence, the <italic>Q</i> and <italic>TCF</i> of the coupled resonator could be manipulated by adjusting the effective mass ratio between two coupling parts. Experiment results illustrate that the fabricated coupled resonator resonates at 25.202 MHz with an unloaded <italic>Q</i> of 80695 and frequency shifts of ±55 ppm over the temperature range of −40 °C to 85 °C. Compared to a standalone WE resonator fabricated under the same conditions, this represents a 2.44-fold increase in <italic>Q</i><inline-formula> <tex-math>${}_{textbf {un}}$ </tex-math></inline-formula> and a 2.5-fold reduction in frequency drifts, underscoring the effectiveness of the mechanical coupling approach in optimizing resonator performance. [2025-0077]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 6","pages":"777-783"},"PeriodicalIF":3.1,"publicationDate":"2025-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145652183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-11DOI: 10.1109/JMEMS.2025.3595506
Vakhtang Chulukhadze;Jack Kramer;Tzu-Hsuan Hsu;Ian Anderson;Omar Barrera;Sinwoo Cho;Joshua Campbell;Ruochen Lu
In this work, we demonstrate first-of-its-kind, cross-sectional Láme mode resonators (CLMR) in thin-film lithium niobate (LN) at 6G FR3 frequency bands. The prototype LN CLMR exhibits two cross-sectional Láme mode (CLM) resonances due to its unique working mechanism, showing high 3-db parallel quality factors $(!Q_{p}!)$ of 225 and 398 at 13.9 and 14.9 GHz, alongside a high extracted electro-mechanical coupling ($k^{2}$ ) of 13.4% and 7.2%, respectively. These results yield high figures of merit (FoM, $Q_{p}$ $cdot $ k2) of 30.2 and 28.7 at their operating frequencies. In comparison with conventional fundamental symmetric (S0) Lamb mode resonators on the same sample, the proposed platform scales its S0 counterpart in frequency while showing higher Q, highlighting the low-loss property of the cross-sectional Láme mode (CLM). With further fabrication optimization, a new family of cross-sectional modes can be characterized, warranted by the strong dispersive nature of LN, disrupting the status quo in single-crystal LN device design.
{"title":"Cross-Sectional Láme Mode Acoustic Resonators in Thin-Film Lithium Niobate","authors":"Vakhtang Chulukhadze;Jack Kramer;Tzu-Hsuan Hsu;Ian Anderson;Omar Barrera;Sinwoo Cho;Joshua Campbell;Ruochen Lu","doi":"10.1109/JMEMS.2025.3595506","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3595506","url":null,"abstract":"In this work, we demonstrate first-of-its-kind, cross-sectional Láme mode resonators (CLMR) in thin-film lithium niobate (LN) at 6G FR3 frequency bands. The prototype LN CLMR exhibits two cross-sectional Láme mode (CLM) resonances due to its unique working mechanism, showing high 3-db parallel quality factors <inline-formula> <tex-math>$(!Q_{p}!)$ </tex-math></inline-formula> of 225 and 398 at 13.9 and 14.9 GHz, alongside a high extracted electro-mechanical coupling (<inline-formula> <tex-math>$k^{2}$ </tex-math></inline-formula>) of 13.4% and 7.2%, respectively. These results yield high figures of merit (FoM, <inline-formula> <tex-math>$Q_{p}$ </tex-math></inline-formula><inline-formula> <tex-math>$cdot $ </tex-math></inline-formula> <italic>k<sup>2</sup></i>) of 30.2 and 28.7 at their operating frequencies. In comparison with conventional fundamental symmetric (S0) Lamb mode resonators on the same sample, the proposed platform scales its S0 counterpart in frequency while showing higher <italic>Q</i>, highlighting the low-loss property of the cross-sectional Láme mode (CLM). With further fabrication optimization, a new family of cross-sectional modes can be characterized, warranted by the strong dispersive nature of LN, disrupting the status quo in single-crystal LN device design.","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 6","pages":"714-720"},"PeriodicalIF":3.1,"publicationDate":"2025-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145652140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Piezoelectric MEMS devices based on bimorph scandium-doped aluminum nitride (AlScN) exhibit greater performance potential than those based on unimorph structures. In this paper, we present an optimized bimorph stack utilizing Alx Sc${}_{1-text {x}}$ N on an 8-inch silicon wafer. The control of abnormally oriented grains (AOG) was achieved by incorporating Al0.9Sc0.1N and Al0.8Sc0.2N composite films. XRD, TEM, EBSD, and PFM analyses were performed to characterize the proposed composite films. The capacitance ($C_{0}$ ) and piezoelectric coefficients ($d_{33,f}$ ) of the fabricated composite bimorph stack were measured using a double beam laser interferometer (DBLI) at the wafer level. Additionally, the relative dielectric constant (${varepsilon }_{r}$ ) and intrinsic electromechanical coupling coefficient ($K_{t}^{2}$ ) were calculated. Results indicate that the Al0.9Sc0.1N and Al0.8Sc0.2N composite bimorph stack exhibits a lower density of AOGs, improved uniformity in $d_{33,f}$ (34.8%) and lower stress range (less than 80MPa) across the wafer compared to the pure Al0.8Sc0.2N bimorph stack. Furthermore, the reductions in $d_{33,f}$ (10.5%), $K_{t}^{2}$ (9.8%), and $varepsilon _{r}$ (6.4%) in the composite bimorph stack remain within acceptable limits. The AlxSc${}_{1-text {x}}$ N bimorph stack with uniformity enhanced by the use of composite films offers a promising solution for the mass production of high-performance piezoelectric MEMS devices.[2025-0074]
{"title":"Control of Abnormally Oriented Grains (AOG) in AlxSc1–xN Bimorph Stack and Characterization of Piezoelectric Properties on an 8-in Wafer","authors":"Yucheng Ji;Anyuan Liu;Ruixiang Yan;Songsong Zhang;Alex Gu","doi":"10.1109/JMEMS.2025.3587905","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3587905","url":null,"abstract":"Piezoelectric MEMS devices based on bimorph scandium-doped aluminum nitride (AlScN) exhibit greater performance potential than those based on unimorph structures. In this paper, we present an optimized bimorph stack utilizing Al<sub>x</sub> Sc<inline-formula> <tex-math>${}_{1-text {x}}$ </tex-math></inline-formula>N on an 8-inch silicon wafer. The control of abnormally oriented grains (AOG) was achieved by incorporating Al<sub>0.9</sub>Sc<sub>0.1</sub>N and Al<sub>0.8</sub>Sc<sub>0.2</sub>N composite films. XRD, TEM, EBSD, and PFM analyses were performed to characterize the proposed composite films. The capacitance (<inline-formula> <tex-math>$C_{0}$ </tex-math></inline-formula>) and piezoelectric coefficients (<inline-formula> <tex-math>$d_{33,f}$ </tex-math></inline-formula>) of the fabricated composite bimorph stack were measured using a double beam laser interferometer (DBLI) at the wafer level. Additionally, the relative dielectric constant (<inline-formula> <tex-math>${varepsilon }_{r}$ </tex-math></inline-formula>) and intrinsic electromechanical coupling coefficient (<inline-formula> <tex-math>$K_{t}^{2}$ </tex-math></inline-formula>) were calculated. Results indicate that the Al<sub>0.9</sub>Sc<sub>0.1</sub>N and Al<sub>0.8</sub>Sc<sub>0.2</sub>N composite bimorph stack exhibits a lower density of AOGs, improved uniformity in <inline-formula> <tex-math>$d_{33,f}$ </tex-math></inline-formula> (34.8%) and lower stress range (less than 80MPa) across the wafer compared to the pure Al<sub>0.8</sub>Sc<sub>0.2</sub>N bimorph stack. Furthermore, the reductions in <inline-formula> <tex-math>$d_{33,f}$ </tex-math></inline-formula> (10.5%), <inline-formula> <tex-math>$K_{t}^{2}$ </tex-math></inline-formula> (9.8%), and <inline-formula> <tex-math>$varepsilon _{r}$ </tex-math></inline-formula>(6.4%) in the composite bimorph stack remain within acceptable limits. The Al<sub>x</sub>Sc<inline-formula> <tex-math>${}_{1-text {x}}$ </tex-math></inline-formula>N bimorph stack with uniformity enhanced by the use of composite films offers a promising solution for the mass production of high-performance piezoelectric MEMS devices.[2025-0074]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 6","pages":"744-751"},"PeriodicalIF":3.1,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145652162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-09DOI: 10.1109/JMEMS.2025.3602552
Dexiang Zhang;Graham S. Wood;Hannah Levene;Andreas Tsiamis;Camelia Dunare;Peter Lomax;Rebecca Cheung
This study reports the first successful fabrication and characterization of mode localized mechanically coupled resonators based on silicon carbide (SiC). Due to SiC’s high Young’s modulus, SiC-based resonators achieve higher frequencies than traditional silicon-based devices of the same dimensions. The system was designed, simulated, and fabricated with integrated aluminium nitride (AlN) films and electrothermal electrodes to enable dual-mode actuation and frequency tuning. The piezoelectric AlN thin film was deposited by DC sputtering and subsequently characterized by X-ray diffraction (XRD) and piezoresponse force microscopy (PFM). The piezoelectric coefficient $d_{33}$ was measured to be 1.6 pm/N. X-ray photoelectron spectroscopy (XPS) revealed an Al:N ratio of 1.12:1 with minor oxygen impurities. The resonant frequency and amplitude of the coupled resonators were measured using a laser Doppler vibrometer (LDV). Compared to electrothermal actuation, the system under piezoelectric actuation exhibited a more linear, stable, and larger-amplitude response, resulting in a quality factor of 197. The introduction of electrothermal tuning allows the system to be balanced, compensating for fabrication tolerance and environmental effects. When a 2 V DC voltage is applied to the electrothermal port, the resulting thermal stress change induces a change of amplitude ratio of 225%, which is 52.4 times higher than the resonant frequency change. This study provides a foundation for the future use of SiC in mechanically coupled resonators as actuators or sensors.[2025-0058]
{"title":"Piezoelectric and Electrothermal Driven Tunable Mode Localized Coupled Silicon Carbide Resonators","authors":"Dexiang Zhang;Graham S. Wood;Hannah Levene;Andreas Tsiamis;Camelia Dunare;Peter Lomax;Rebecca Cheung","doi":"10.1109/JMEMS.2025.3602552","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3602552","url":null,"abstract":"This study reports the first successful fabrication and characterization of mode localized mechanically coupled resonators based on silicon carbide (SiC). Due to SiC’s high Young’s modulus, SiC-based resonators achieve higher frequencies than traditional silicon-based devices of the same dimensions. The system was designed, simulated, and fabricated with integrated aluminium nitride (AlN) films and electrothermal electrodes to enable dual-mode actuation and frequency tuning. The piezoelectric AlN thin film was deposited by DC sputtering and subsequently characterized by X-ray diffraction (XRD) and piezoresponse force microscopy (PFM). The piezoelectric coefficient <inline-formula> <tex-math>$d_{33}$ </tex-math></inline-formula> was measured to be 1.6 pm/N. X-ray photoelectron spectroscopy (XPS) revealed an Al:N ratio of 1.12:1 with minor oxygen impurities. The resonant frequency and amplitude of the coupled resonators were measured using a laser Doppler vibrometer (LDV). Compared to electrothermal actuation, the system under piezoelectric actuation exhibited a more linear, stable, and larger-amplitude response, resulting in a quality factor of 197. The introduction of electrothermal tuning allows the system to be balanced, compensating for fabrication tolerance and environmental effects. When a 2 V DC voltage is applied to the electrothermal port, the resulting thermal stress change induces a change of amplitude ratio of 225%, which is 52.4 times higher than the resonant frequency change. This study provides a foundation for the future use of SiC in mechanically coupled resonators as actuators or sensors.[2025-0058]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 6","pages":"759-767"},"PeriodicalIF":3.1,"publicationDate":"2025-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11153922","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145652168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The introduction of nonlinearity has broadened the performance and application range of micro-mechanical resonators, making the design and regulation of tailored nonlinear properties crucial—necessitating the identification of distinct nonlinear states. While traditional models account for either hardening or softening nonlinearities, they often overlook mixed nonlinearity, which manifests as dual jumps—right-sided (hardening) and left-sided (softening)—in the amplitude-frequency response. To clarify the transitions among hardening, softening, and mixed states, we performed experiments on a single micro-mechanical straight beam, where all three regimes were induced by modulating the excitation and electrothermal current. Based on the observed backbone curves, we developed an analytical model to characterize the boundaries of these nonlinear states. The model shows good agreement with experimental observations, supporting its effectiveness in capturing the underlying trends. Rather than providing exact predictions, the model offers insights into how the quadratic and cubic nonlinear coefficients, along with excitation intensity, influence state transitions. These findings contribute to a better understanding of nonlinear behavior and offer guidance for the design and regulation of nonlinear states in micro-mechanical systems.[2025-0044]
{"title":"Regulation of Three Different Nonlinear States in Micromechanical Resonators","authors":"Zunhao Xiao;Zhan Shi;Xuefeng Wang;Qiangfeng Lv;Xueyong Wei;Ronghua Huan","doi":"10.1109/JMEMS.2025.3600653","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3600653","url":null,"abstract":"The introduction of nonlinearity has broadened the performance and application range of micro-mechanical resonators, making the design and regulation of tailored nonlinear properties crucial—necessitating the identification of distinct nonlinear states. While traditional models account for either hardening or softening nonlinearities, they often overlook mixed nonlinearity, which manifests as dual jumps—right-sided (hardening) and left-sided (softening)—in the amplitude-frequency response. To clarify the transitions among hardening, softening, and mixed states, we performed experiments on a single micro-mechanical straight beam, where all three regimes were induced by modulating the excitation and electrothermal current. Based on the observed backbone curves, we developed an analytical model to characterize the boundaries of these nonlinear states. The model shows good agreement with experimental observations, supporting its effectiveness in capturing the underlying trends. Rather than providing exact predictions, the model offers insights into how the quadratic and cubic nonlinear coefficients, along with excitation intensity, influence state transitions. These findings contribute to a better understanding of nonlinear behavior and offer guidance for the design and regulation of nonlinear states in micro-mechanical systems.[2025-0044]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 6","pages":"768-776"},"PeriodicalIF":3.1,"publicationDate":"2025-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145652128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-01DOI: 10.1109/JMEMS.2025.3601368
Haoqin Ma;Sulei Fu;Peisen Liu;Boyuan Xiao;Xinchen Zhou;Jiajun Gao;Cheng Song;Fei Zeng;Feng Pan
LiNbO3 thin film on insulator (LNOl) platform has emerged as a promising solution for wideband and low-loss surface acoustic wave (SAW) applications in Sub-6G era. However, Rayleigh spurious mode is a very serious problem in LNOI platform. In this work, machine learning approach random forest developed by Bayesian Optimization is employed to predict the performance of SAW resonators based on LNOI platform. Additionally, an intelligent algorithm is formulated to quantify the number of spurious modes of LNOI platform, thereby enabling the selection of parameter combinations that eliminate spurious modes and possess electromechanical coupling coefficient (K2) higher than 20%. Moreover, this work selected parameter combinations from predicted results and designed corresponding SAW resonators based on LNOl platform to verify accuracy of the prediction and spurious modes. [2025-0081]
{"title":"Design of Spurious-Free Surface Acoustic Wave Resonators on LNOI Platform Using Machine Learning","authors":"Haoqin Ma;Sulei Fu;Peisen Liu;Boyuan Xiao;Xinchen Zhou;Jiajun Gao;Cheng Song;Fei Zeng;Feng Pan","doi":"10.1109/JMEMS.2025.3601368","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3601368","url":null,"abstract":"LiNbO<sub>3</sub> thin film on insulator (LNOl) platform has emerged as a promising solution for wideband and low-loss surface acoustic wave (SAW) applications in Sub-6G era. However, Rayleigh spurious mode is a very serious problem in LNOI platform. In this work, machine learning approach random forest developed by Bayesian Optimization is employed to predict the performance of SAW resonators based on LNOI platform. Additionally, an intelligent algorithm is formulated to quantify the number of spurious modes of LNOI platform, thereby enabling the selection of parameter combinations that eliminate spurious modes and possess electromechanical coupling coefficient (<italic>K<sup>2</sup></i>) higher than 20%. Moreover, this work selected parameter combinations from predicted results and designed corresponding SAW resonators based on LNOl platform to verify accuracy of the prediction and spurious modes. [2025-0081]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 6","pages":"752-758"},"PeriodicalIF":3.1,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145652154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We present a fully passive, ultraminiaturized drug delivery microchip that enables wireless, on-demand release via ultrasonic actuation - a mechanism not previously demonstrated in implantable drug delivery systems. By eliminating the need for integrated power and control components, the device achieves sub-millimeter dimensions (<0.2> $times 0.5$ mm $times 1$ mm), enabling minimally invasive implantation in sensitive or hard-to-reach tissues. The system relies on ultrathin metallic membranes (<100> $mu $ m wide, <200> $2~mu $ g of powder payload from individual microcavities in response to specific frequencies (360/420/580 kHz), with membrane rupture occurring in in vivo conditions at ultrasonic intensities within clinically safe limits (<150>2). This platform represents a significant step toward precise, programmable drug delivery in anatomically constrained or delicate regions.[2025-0104]
{"title":"Ultrasonic Selective Opening of Microcavities for Drug Delivery Microimplants","authors":"Theocharis Nikiforos Iordanidis;Argyris Spyrou;Göran Stemme;Niclas Roxhed","doi":"10.1109/JMEMS.2025.3597789","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3597789","url":null,"abstract":"We present a fully passive, ultraminiaturized drug delivery microchip that enables wireless, on-demand release via ultrasonic actuation - a mechanism not previously demonstrated in implantable drug delivery systems. By eliminating the need for integrated power and control components, the device achieves sub-millimeter dimensions (<0.2> <tex-math>$times 0.5$ </tex-math></inline-formula> mm <inline-formula> <tex-math>$times 1$ </tex-math></inline-formula> mm), enabling minimally invasive implantation in sensitive or hard-to-reach tissues. The system relies on ultrathin metallic membranes (<100> <tex-math>$mu $ </tex-math></inline-formula>m wide, <200> <tex-math>$2~mu $ </tex-math></inline-formula>g of powder payload from individual microcavities in response to specific frequencies (360/420/580 kHz), with membrane rupture occurring in <italic>in vivo</i> conditions at ultrasonic intensities within clinically safe limits (<150><sup>2</sup></i>). This platform represents a significant step toward precise, programmable drug delivery in anatomically constrained or delicate regions.[2025-0104]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 5","pages":"691-700"},"PeriodicalIF":3.1,"publicationDate":"2025-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11128870","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145204566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-15DOI: 10.1109/JMEMS.2025.3595899
Ting-Yi Chen;Chun-Pu Tsai;Wei-Chang Li
Operating microscale mechanical resonators in the nonlinear region has brought up abundant research activities. Among various nonlinear phenomena, internal resonance referring to energy exchange between different vibration modes in a resonant cavity has been theoretically and experimentally demonstrated with a great potential for improving the sensitivity performance compared to conventional frequency modulated resonant sensors. In particular, mechanical frequency combs induced by unstable internal resonance in which time-varying energy transfer between modes occurs, have emerged as alternative candidates for boosting the sensitivity. This work experimentally shows this by 1:6 internal resonance derived frequency comb spacing modulation in micromechanical resonators, revealing more than $30times $ enhancement in response to temperature change compared to that in a regular resonator counterpart. Based on the nonlinear model developed in this work, the use of 1:6 internal resonance is key to attaining linear dependence of comb spacing against temperature variation. The results show a new paradigm for ultrasensitive sensing schemes. [2025-0036]
{"title":"Ultrasensitive Sensing via Internal Resonance Induced Frequency Combs in Micromechanical Resonators","authors":"Ting-Yi Chen;Chun-Pu Tsai;Wei-Chang Li","doi":"10.1109/JMEMS.2025.3595899","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3595899","url":null,"abstract":"Operating microscale mechanical resonators in the nonlinear region has brought up abundant research activities. Among various nonlinear phenomena, internal resonance referring to energy exchange between different vibration modes in a resonant cavity has been theoretically and experimentally demonstrated with a great potential for improving the sensitivity performance compared to conventional frequency modulated resonant sensors. In particular, mechanical frequency combs induced by unstable internal resonance in which time-varying energy transfer between modes occurs, have emerged as alternative candidates for boosting the sensitivity. This work experimentally shows this by 1:6 internal resonance derived frequency comb spacing modulation in micromechanical resonators, revealing more than <inline-formula> <tex-math>$30times $ </tex-math></inline-formula> enhancement in response to temperature change compared to that in a regular resonator counterpart. Based on the nonlinear model developed in this work, the use of 1:6 internal resonance is key to attaining linear dependence of comb spacing against temperature variation. The results show a new paradigm for ultrasensitive sensing schemes. [2025-0036]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 5","pages":"557-570"},"PeriodicalIF":3.1,"publicationDate":"2025-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145204567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-12DOI: 10.1109/JMEMS.2025.3584766
Joshua Rosenberg;Mary E. Galanko Klemash;Ryan Rudy;Tyler Hack;Alexander B. Kozyrev;Prasad Gudem;Andy Walker;Drew A. Hall;Sarah S. Bedair
This work reports the first ultra-low power wake-up receiver (WuRX) to be integrated with a quartz micro-electromechanical systems (MEMS) transformer-based matching network (MN), achieving the best signal-to-interference ratio (SIR) compared to state-of-the-art sub-100 nW receivers. A quartz resonant piezoelectric transformer (PT) was chosen for its high loaded Q (~19,000), enabling large, passive voltage gain – a necessity for low-power radios where active RF amplification consumes too much power. Optimization of the CMOS envelope detector (ED) input impedance and number of ED stages preserves the high Q of the preceding MEMS transformer while maintaining a high passive gain of 27 dB and a narrow bandwidth of 2 kHz at 50 MHz. The quartz PT is designed for maximum voltage gain from a $50~Omega $ source to the ED input. The 6-stage ED is designed with an input impedance greater than 1 M$Omega $ and a conversion gain of 264.9 V-1 to maximize sensitivity without de-Qing the transformer. The WuRX is implemented in a 65-nm CMOS process and achieves a sensitivity of −71.9 dBm while consuming just 27 nW. The measured SIR is −46 dB at a 0.8% frequency offset due to the narrowband filtering from the transformer.
{"title":"A 27-nW Wake-Up Receiver With a Quartz Transformer Matching Network Achieving −71.9-dBm Sensitivity and −46-dB SIR at 0.8% Offset","authors":"Joshua Rosenberg;Mary E. Galanko Klemash;Ryan Rudy;Tyler Hack;Alexander B. Kozyrev;Prasad Gudem;Andy Walker;Drew A. Hall;Sarah S. Bedair","doi":"10.1109/JMEMS.2025.3584766","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3584766","url":null,"abstract":"This work reports the first ultra-low power wake-up receiver (WuRX) to be integrated with a quartz micro-electromechanical systems (MEMS) transformer-based matching network (MN), achieving the best signal-to-interference ratio (SIR) compared to state-of-the-art sub-100 nW receivers. A quartz resonant piezoelectric transformer (PT) was chosen for its high loaded <italic>Q (~19,000)</i>, enabling large, passive voltage gain – a necessity for low-power radios where active RF amplification consumes too much power. Optimization of the CMOS envelope detector (ED) input impedance and number of ED stages preserves the high <italic>Q</i> of the preceding MEMS transformer while maintaining a high passive gain of 27 dB and a narrow bandwidth of 2 kHz at 50 MHz. The quartz PT is designed for maximum voltage gain from a <inline-formula> <tex-math>$50~Omega $ </tex-math></inline-formula> source to the ED input. The 6-stage ED is designed with an input impedance greater than 1 M<inline-formula> <tex-math>$Omega $ </tex-math></inline-formula> and a conversion gain of 264.9 V<sup>-1</sup> to maximize sensitivity without de-<italic>Q</i>ing the transformer. The WuRX is implemented in a 65-nm CMOS process and achieves a sensitivity of −71.9 dBm while consuming just 27 nW. The measured SIR is −46 dB at a 0.8% frequency offset due to the narrowband filtering from the transformer.","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 5","pages":"611-621"},"PeriodicalIF":3.1,"publicationDate":"2025-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145204563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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