Pub Date : 2025-06-25DOI: 10.1109/JMEMS.2025.3579544
João R. Freitas;José A. Rodrigues;João L. Machado;Leandro A. A. Aguiar;Ana J. Rodrigues;João F. Oliveira;José H. Correia;Sara Pimenta
The use of flexible neural probes for brain recordings presents several advantages compared to rigid neural probes. The main advantage is related to the reduction of damage to the neural tissue when using a flexible invasive neural probe. This work presents the fabrication, characterization, and in vivo validation of a flexible neural probe fabricated with photosensitive and low-temperature cured polyimide. The neural probe was fabricated with standard microfabrication technologies, and its dimensions are approximately $130~mu $ m in width, $9~mu $ m in thickness, and 6 mm in shaft length. The device has 11 platinum microelectrodes, deposited by direct current sputtering. Electrochemical characterization of the microelectrodes was performed immediately after fabrication and again after six months, showing a final mean impedance in the range of 200-400 k$Omega $ at 1 kHz, demonstrating their suitability for neural signal detection. Then, insertion tests were performed using an agar phantom and a mouse brain, considering two approaches for implantation. After choosing the best approach, acute in vivo electrophysiological recordings were performed in an anesthetized mouse, successfully recording spikes and local field potential neural activity from the hippocampus.[2025-0034]
与刚性神经探针相比，使用柔性神经探针进行脑记录有几个优点。主要的优点是当使用柔性侵入性神经探针时，减少了对神经组织的损伤。本文介绍了一种柔性神经探针的制备、表征和体内验证，该探针由光敏和低温固化聚酰亚胺制成。神经探针采用标准微加工技术制造，其尺寸约为$130~mu $ m宽，$9~mu $ m厚，轴长6 mm。该装置有11个铂微电极，通过直流溅射沉积。在制作完成后立即对微电极进行电化学表征，并在六个月后再次进行电化学表征，在1 kHz时显示最终平均阻抗在200-400 k $Omega $范围内，证明其适合神经信号检测。然后，考虑两种植入方法，使用琼脂幻影和小鼠大脑进行植入试验。选择最佳方法后，在麻醉小鼠中进行急性体内电生理记录，成功记录了海马峰和局部场电位神经活动。[2025-0034]
{"title":"Fabrication, Electrochemical Characterization, and In Vivo Validation of a Flexible Neural Probe","authors":"João R. Freitas;José A. Rodrigues;João L. Machado;Leandro A. A. Aguiar;Ana J. Rodrigues;João F. Oliveira;José H. Correia;Sara Pimenta","doi":"10.1109/JMEMS.2025.3579544","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3579544","url":null,"abstract":"The use of flexible neural probes for brain recordings presents several advantages compared to rigid neural probes. The main advantage is related to the reduction of damage to the neural tissue when using a flexible invasive neural probe. This work presents the fabrication, characterization, and <italic>in vivo</i> validation of a flexible neural probe fabricated with photosensitive and low-temperature cured polyimide. The neural probe was fabricated with standard microfabrication technologies, and its dimensions are approximately <inline-formula> <tex-math>$130~mu $ </tex-math></inline-formula>m in width, <inline-formula> <tex-math>$9~mu $ </tex-math></inline-formula>m in thickness, and 6 mm in shaft length. The device has 11 platinum microelectrodes, deposited by direct current sputtering. Electrochemical characterization of the microelectrodes was performed immediately after fabrication and again after six months, showing a final mean impedance in the range of 200-400 k<inline-formula> <tex-math>$Omega $ </tex-math></inline-formula> at 1 kHz, demonstrating their suitability for neural signal detection. Then, insertion tests were performed using an agar phantom and a mouse brain, considering two approaches for implantation. After choosing the best approach, acute <italic>in vivo</i> electrophysiological recordings were performed in an anesthetized mouse, successfully recording spikes and local field potential neural activity from the hippocampus.[2025-0034]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 4","pages":"482-487"},"PeriodicalIF":3.1,"publicationDate":"2025-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144756774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-25DOI: 10.1109/JMEMS.2025.3581048
Erion Uka;Chun Zhao
Memristors, uniquely characterized by their pinched hysteresis loop fingerprints, have attracted significant research interest over the past decade, due to their enormous potential for novel computation and artificial intelligence applications. Memristors are widely regarded as the fourth fundamental electrical component, with voltage and current being their input and output signals. In broader terms, similar pinched hysteresis behavior should also exist in other physical systems across domains (e.g., physical input and electrical output), hence linking the real physical world with the digital domain (e.g., in the form of a physical sensor). In this work, we report the first observation of pinched hysteresis behavior in a micro-electro-mechanical systems (MEMS) resonator device, showing that it is viable to create resonant MEMS sensors incorporating memristor-like properties, i.e., MemReSensor. We envisage that this will lay the foundations for a new way of fusing MEMS with artificial intelligence (AI), such as creating in-physical-sensor computing, as well as in-sensor AI, e.g., multi-mode in-sensor matrix multiplication across domains. [2025-0029]
{"title":"Toward Memristor-Like Resonant Sensors: Observation of Pinched Hysteresis Within MEMS Resonators","authors":"Erion Uka;Chun Zhao","doi":"10.1109/JMEMS.2025.3581048","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3581048","url":null,"abstract":"Memristors, uniquely characterized by their pinched hysteresis loop fingerprints, have attracted significant research interest over the past decade, due to their enormous potential for novel computation and artificial intelligence applications. Memristors are widely regarded as the fourth fundamental electrical component, with voltage and current being their input and output signals. In broader terms, similar pinched hysteresis behavior should also exist in other physical systems across domains (e.g., physical input and electrical output), hence linking the real physical world with the digital domain (e.g., in the form of a physical sensor). In this work, we report the first observation of pinched hysteresis behavior in a micro-electro-mechanical systems (MEMS) resonator device, showing that it is viable to create resonant MEMS sensors incorporating memristor-like properties, i.e., <italic>MemReSensor</i>. We envisage that this will lay the foundations for a new way of fusing MEMS with artificial intelligence (AI), such as creating in-physical-sensor computing, as well as in-sensor AI, e.g., multi-mode in-sensor matrix multiplication across domains. [2025-0029]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 4","pages":"503-512"},"PeriodicalIF":3.1,"publicationDate":"2025-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144758391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In recent years, the rapid development of Micro-Electro-Mechanical System (MEMS) technology has facilitated the widespread application of MEMS micromirrors in various precision instruments owing to their exceptional optical control capabilities. Meanwhile, the demand for increased accuracy in micromirror control has also grown steadily. This paper evaluates three distinct piezoresistive schemes for angle feedback in MEMS micromirrors, aiming to elucidate their key advantages and limitations while providing guidance for high-accuracy scheme selection. The comparison is based on the piezoresistive behavior of single-crystal silicon under identical n-type doping conditions. The angle feedback sensor is integrated into a custom-designed 1D MEMS electromagnetic micromirror, which features a multi-layer stacked assembly and a moving-magnet driving scheme. The peak-to-peak voltage (Vpp) in the feedback signal is comprehensively analyzed, and the rarely explored DC offset drift is also explicitly discussed. Experimental results reveal that the Wheatstone scheme provides the highest angle feedback sensitivity, measured at 6.96 mV/(V$cdot $ deg), while the four-terminal scheme exhibits the most stable DC offset drift, with a maximum of only 0.137 mV over the entire test period. [2024-0211]
{"title":"Piezoresistive Angle Feedback Sensors With Various Schemes in MEMS Micromirrors","authors":"Er-Qi Tu;Xiao-Yong Fang;Fei Zhao;Jia-Hao Wu;Wen-Ming Zhang","doi":"10.1109/JMEMS.2025.3575334","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3575334","url":null,"abstract":"In recent years, the rapid development of Micro-Electro-Mechanical System (MEMS) technology has facilitated the widespread application of MEMS micromirrors in various precision instruments owing to their exceptional optical control capabilities. Meanwhile, the demand for increased accuracy in micromirror control has also grown steadily. This paper evaluates three distinct piezoresistive schemes for angle feedback in MEMS micromirrors, aiming to elucidate their key advantages and limitations while providing guidance for high-accuracy scheme selection. The comparison is based on the piezoresistive behavior of single-crystal silicon under identical n-type doping conditions. The angle feedback sensor is integrated into a custom-designed 1D MEMS electromagnetic micromirror, which features a multi-layer stacked assembly and a moving-magnet driving scheme. The peak-to-peak voltage (Vpp) in the feedback signal is comprehensively analyzed, and the rarely explored DC offset drift is also explicitly discussed. Experimental results reveal that the Wheatstone scheme provides the highest angle feedback sensitivity, measured at 6.96 mV/(V<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>deg), while the four-terminal scheme exhibits the most stable DC offset drift, with a maximum of only 0.137 mV over the entire test period. [2024-0211]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 4","pages":"472-481"},"PeriodicalIF":3.1,"publicationDate":"2025-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144758438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lithium niobate (LiNbO3) laterally excited bulk acoustic wave resonators (XBARs) show great potential for high-frequency, wide-bandwidth radio frequency (RF) filters. However, suppressing spurious mode responses remains a critical challenge. In this study, we demonstrate near-spurious-free 6.5 GHz Z-Y LiNbO3 XBARs using dimension-matched and response-averaged electrodes. Dispersion analysis of traditional interdigitated transducer (IDT) electrode dimensions reveals that spurious mode response levels are minimized when the electrode width corresponds to half the wavelength of the second-order quasi-antisymmetric (QA2) Lamb mode in the electrode/LiNbO3 plate. This result holds across a range of electrode thicknesses and exhibits weak dependence on pitch. Based on these matched IDT dimensions, we propose three novel IDT topologies that employ response-averaging strategies to further reduce spurious mode responses without compromising the first-order antisymmetric (A1) Lamb mode. The fabricated devices show good agreement with simulation results, achieving a low-spurious response and moderate performance. This work provides a systematic design framework for low-spurious-response XBARs, offering a path to more reliable and efficient next-generation wireless front-end filters. [2025-0070]
{"title":"Near-Spurious-Free 6.5 GHz XBARs With Dimension-Matched and Response-Averaged Electrodes","authors":"Zihao Xie;Xianhao Le;Tengbo Cao;Feng Gao;Qing Wan;Jin Xie","doi":"10.1109/JMEMS.2025.3577619","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3577619","url":null,"abstract":"Lithium niobate (LiNbO<sub>3</sub>) laterally excited bulk acoustic wave resonators (XBARs) show great potential for high-frequency, wide-bandwidth radio frequency (RF) filters. However, suppressing spurious mode responses remains a critical challenge. In this study, we demonstrate near-spurious-free 6.5 GHz Z-Y LiNbO<sub>3</sub> XBARs using dimension-matched and response-averaged electrodes. Dispersion analysis of traditional interdigitated transducer (IDT) electrode dimensions reveals that spurious mode response levels are minimized when the electrode width corresponds to half the wavelength of the second-order quasi-antisymmetric (QA2) Lamb mode in the electrode/LiNbO<sub>3</sub> plate. This result holds across a range of electrode thicknesses and exhibits weak dependence on pitch. Based on these matched IDT dimensions, we propose three novel IDT topologies that employ response-averaging strategies to further reduce spurious mode responses without compromising the first-order antisymmetric (A1) Lamb mode. The fabricated devices show good agreement with simulation results, achieving a low-spurious response and moderate performance. This work provides a systematic design framework for low-spurious-response XBARs, offering a path to more reliable and efficient next-generation wireless front-end filters. [2025-0070]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 4","pages":"496-502"},"PeriodicalIF":3.1,"publicationDate":"2025-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144758389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-11DOI: 10.1109/JMEMS.2025.3576255
Xudong Song;Dayong Qiao;Xiumin Song
Serpentine springs are widely employed in microelectromechanical systems (MEMS) accelerometers, resonators, and mirrors due to their unique advantages, including a wide adjustable stiffness range and minimal area occupation. Despite these advantages, the inherent nonlinearity of the serpentine torsion bars, whose origin remains unclear, imposes limitations on the performance of MEMS mirrors. This study investigates the nonlinearity of the three-end serpentine torsion bars, which consist of middle and side beams. Through the derivation of spring constants for both the middle and side beams and the definition of a nonlinear factor for the serpentine torsion bars, it was established that the nonlinearity is predominantly influenced by the center offset of the side beam. A specific three-end serpentine torsion bar was utilized to examine the effects of the center offset of the side beam. The variation in the cubic spring constant of the serpentine torsion bars (${k} _{mathbf {3}}$ ) was found to closely resemble that of the side beams (${k} _{mathbf {s3}}$ ) during the center offset adjustment, with weak nonlinearity emerging at a small center offset. To validate the effectiveness of the nonlinearity reduction, an electromagnetic MEMS mirror incorporating three-end serpentine torsion bars with weak nonlinearity was designed. Experimental results demonstrated that the MEMS mirror can operate linearly at a frequency of 3002.36 Hz and achieve an optical angle of 95°. This advancement is expected to enhance the performance and expand the application scope of MEMS mirrors.[2025-0073]
{"title":"Nonlinearity Reduction in Three-End Serpentine Torsion Bar of MEMS Mirror","authors":"Xudong Song;Dayong Qiao;Xiumin Song","doi":"10.1109/JMEMS.2025.3576255","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3576255","url":null,"abstract":"Serpentine springs are widely employed in microelectromechanical systems (MEMS) accelerometers, resonators, and mirrors due to their unique advantages, including a wide adjustable stiffness range and minimal area occupation. Despite these advantages, the inherent nonlinearity of the serpentine torsion bars, whose origin remains unclear, imposes limitations on the performance of MEMS mirrors. This study investigates the nonlinearity of the three-end serpentine torsion bars, which consist of middle and side beams. Through the derivation of spring constants for both the middle and side beams and the definition of a nonlinear factor for the serpentine torsion bars, it was established that the nonlinearity is predominantly influenced by the center offset of the side beam. A specific three-end serpentine torsion bar was utilized to examine the effects of the center offset of the side beam. The variation in the cubic spring constant of the serpentine torsion bars (<inline-formula> <tex-math>${k} _{mathbf {3}}$ </tex-math></inline-formula>) was found to closely resemble that of the side beams (<inline-formula> <tex-math>${k} _{mathbf {s3}}$ </tex-math></inline-formula>) during the center offset adjustment, with weak nonlinearity emerging at a small center offset. To validate the effectiveness of the nonlinearity reduction, an electromagnetic MEMS mirror incorporating three-end serpentine torsion bars with weak nonlinearity was designed. Experimental results demonstrated that the MEMS mirror can operate linearly at a frequency of 3002.36 Hz and achieve an optical angle of 95°. This advancement is expected to enhance the performance and expand the application scope of MEMS mirrors.[2025-0073]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 4","pages":"488-495"},"PeriodicalIF":3.1,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144756772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-03DOI: 10.1109/JMEMS.2025.3566294
{"title":"Journal of Microelectromechanical Systems Publication Information","authors":"","doi":"10.1109/JMEMS.2025.3566294","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3566294","url":null,"abstract":"","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 3","pages":"C2-C2"},"PeriodicalIF":2.5,"publicationDate":"2025-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11022992","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144206205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper presents the implementation of a piezoelectric contour resonance mode in a micro-electro-mechanical (MEM) disk resonator array, fabricated using a low-cost, commercially available MEMS technology. The resonator operates in a Button-like (BL) mode, which is suitable for a fully differential piezoelectric transduction mechanism. Compared to other modes, such as the anti-symmetric (AS) mode and the Higher wine glass (HWG) mode, the BL mode offers a higher quality factor (Q) and a reasonable coupling coefficient ($k_{t}^{2}$ ) for the same perimeter around the disk device. The mechanical coupling and excitation of a parallel array of nodal point-coupled piezoelectric disk resonators significantly reduce the motional resistance (Rm) of the vibrating disk MEMS resonator, making the BL mode highly attractive due to the achieved performance improvements. The implementation of this method with three resonators results in an effective motional resistance of $101~Omega $ at 32 MHz under ambient air conditions. This value is approximately 3.9 times lower (Qul normalized) than the Rm of $822~Omega $ exhibited by a single contour mode disk resonator. Additionally, an unloaded quality factor (Qul) of 8,230 is observed when operating at 0 dBm power in ambient air. Notably, these enhancements are achieved while maintaining an effective $Q_{ul} gt 10,000$ , as measured in vacuum conditions, along with notable power-handling capabilities in both ambient air and vacuum environments. This work also investigates two other contour resonance modes with the same design considerations to further validate the proposed methodology. [2025-0006]
{"title":"Reduction of Motional Resistance Using Piezoelectric on Silicon MEMS Disk Arrays for Ambient Air Applications","authors":"Abid Ali;Suaid Tariq Balghari;Muhammad Wajih Ullah Siddiqi;Frederic Nabki","doi":"10.1109/JMEMS.2025.3571721","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3571721","url":null,"abstract":"This paper presents the implementation of a piezoelectric contour resonance mode in a micro-electro-mechanical (MEM) disk resonator array, fabricated using a low-cost, commercially available MEMS technology. The resonator operates in a Button-like (BL) mode, which is suitable for a fully differential piezoelectric transduction mechanism. Compared to other modes, such as the anti-symmetric (AS) mode and the Higher wine glass (HWG) mode, the BL mode offers a higher quality factor (<italic>Q</i>) and a reasonable coupling coefficient (<inline-formula> <tex-math>$k_{t}^{2}$ </tex-math></inline-formula>) for the same perimeter around the disk device. The mechanical coupling and excitation of a parallel array of nodal point-coupled piezoelectric disk resonators significantly reduce the motional resistance (<italic>R<sub>m</sub></i>) of the vibrating disk MEMS resonator, making the BL mode highly attractive due to the achieved performance improvements. The implementation of this method with three resonators results in an effective motional resistance of <inline-formula> <tex-math>$101~Omega $ </tex-math></inline-formula> at 32 MHz under ambient air conditions. This value is approximately 3.9 times lower (<italic>Q<sub>ul</sub></i> normalized) than the <italic>R<sub>m</sub></i> of <inline-formula> <tex-math>$822~Omega $ </tex-math></inline-formula> exhibited by a single contour mode disk resonator. Additionally, an unloaded quality factor (<italic>Q<sub>ul</sub></i>) of 8,230 is observed when operating at 0 dBm power in ambient air. Notably, these enhancements are achieved while maintaining an effective <inline-formula> <tex-math>$Q_{ul} gt 10,000$ </tex-math></inline-formula>, as measured in vacuum conditions, along with notable power-handling capabilities in both ambient air and vacuum environments. This work also investigates two other contour resonance modes with the same design considerations to further validate the proposed methodology. [2025-0006]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 4","pages":"459-471"},"PeriodicalIF":3.1,"publicationDate":"2025-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144758266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The work presents a new design of a frequency-modulated (FM) in-plane accelerometer in which the frequency-tuning mechanism is implemented through shaped comb finger (SCF) electrodes. This approach releases the constraints on the travel range of the proof-mass antiphase mode, thus increasing the resonance current and, in turn, improving phase noise. The elementary tuning finger cell is optimized via electrostatic finite element models and is then incorporated into the main sensor design. Experimental data confirm the design validity, achieving almost an order of magnitude improvement in terms of noise: $mathbf {45, mu text {g}/sqrt {text {Hz}}}$ velocity random walk and $mathbf {6, mu text {g}}$ bias stability at 1000 s are achieved, while holding $mathbf {pm 60, text {g}}$ full-scale range, thus leading to 120 dB dynamic range on a 25-Hz bandwidth. Scale factor repeatability, offset drift in temperature and rejection of vibrations are also given attention, measured and discussed. [2025-0037]
本文提出了一种新的调频平面内加速度计的设计，其频率调谐机制是通过梳状指电极来实现的。这种方法解除了对证明质量反相模式行程范围的限制，从而增加了共振电流，进而改善了相位噪声。通过静电有限元模型对基本调谐指胞进行优化，并将其纳入主传感器设计中。实验数据证实了设计的有效性，在噪声方面实现了几乎一个数量级的改进：在保持$mathbf {pm 60, text {g}}$满量程的情况下，实现了$mathbf {45, mu text {g}/sqrt {text {Hz}}}$速度随机游走和$mathbf {6, mu text {g}}$ 1000 s时的偏置稳定性，从而在25 hz带宽上实现了120 dB的动态范围。尺度因子的可重复性、温度偏移和振动抑制也得到了关注、测量和讨论。[2025-0037]
{"title":"60-g FSR, 6-μg Stability FM Time-Switched Accelerometers Through Shaped Comb Fingers","authors":"Luca Pileri;Christian Padovani;Gabriele Gattere;Giacomo Langfelder","doi":"10.1109/JMEMS.2025.3572614","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3572614","url":null,"abstract":"The work presents a new design of a frequency-modulated (FM) in-plane accelerometer in which the frequency-tuning mechanism is implemented through shaped comb finger (SCF) electrodes. This approach releases the constraints on the travel range of the proof-mass antiphase mode, thus increasing the resonance current and, in turn, improving phase noise. The elementary tuning finger cell is optimized via electrostatic finite element models and is then incorporated into the main sensor design. Experimental data confirm the design validity, achieving almost an order of magnitude improvement in terms of noise: <inline-formula> <tex-math>$mathbf {45, mu text {g}/sqrt {text {Hz}}}$ </tex-math></inline-formula> velocity random walk and <inline-formula> <tex-math>$mathbf {6, mu text {g}}$ </tex-math></inline-formula> bias stability at 1000 s are achieved, while holding <inline-formula> <tex-math>$mathbf {pm 60, text {g}}$ </tex-math></inline-formula> full-scale range, thus leading to 120 dB dynamic range on a 25-Hz bandwidth. Scale factor repeatability, offset drift in temperature and rejection of vibrations are also given attention, measured and discussed. [2025-0037]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 4","pages":"379-388"},"PeriodicalIF":3.1,"publicationDate":"2025-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144758392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This letter reports a mechanically coupled quadruple breathing mode ring (QBR) resonator, in which four identical rings are located at the four corners of a square plate with proper design for achieving favorable mechanical coupling. The coupled QBR resonator is purposely designed and forced into vibrating in a square extensional (SE)-coupled-breathing ring (BR) mode by applying electrostatic forces to the electrodes distributed both within and surrounding the rings. Measurement results illustrate that the fabricated coupled QBR resonator has a high quality factor ($boldsymbol {Q}$ ) of 322,110 and a low motional impedance of 18.12 k$Omega $ at its resonant frequency of 10.12 MHz. The measured frequency shift is less than ±67 ppm over the entire industrial temperature range of −40 to $+ 85~^{circ } $ C, with a turnover point near room temperature. Compared with a standalone SE mode or BR resonator, the reported coupled QBR resonator demonstrates a notable reduction in motional impedance and superior frequency-temperature stability, thanks to the large transduction area of the coupled QBR resonator and the excellent frequency-temperature stability of the SE mode resonator as the core coupling element. In light of its decent performance, the coupled QBR resonator has promising application prospects in the field of temperature-compensated MEMS oscillators (TCMOs). [2025-0054]
{"title":"A High-Performance Mechanically Coupled Quadruple Breathing Mode Ring Resonator","authors":"Bowen Li;Yuhao Xiao;Longlong Li;Zhaomin Hua;Guoqiang Wu","doi":"10.1109/JMEMS.2025.3571519","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3571519","url":null,"abstract":"This letter reports a mechanically coupled quadruple breathing mode ring (QBR) resonator, in which four identical rings are located at the four corners of a square plate with proper design for achieving favorable mechanical coupling. The coupled QBR resonator is purposely designed and forced into vibrating in a square extensional (SE)-coupled-breathing ring (BR) mode by applying electrostatic forces to the electrodes distributed both within and surrounding the rings. Measurement results illustrate that the fabricated coupled QBR resonator has a high quality factor (<inline-formula> <tex-math>$boldsymbol {Q}$ </tex-math></inline-formula>) of 322,110 and a low motional impedance of 18.12 k<inline-formula> <tex-math>$Omega $ </tex-math></inline-formula> at its resonant frequency of 10.12 MHz. The measured frequency shift is less than ±67 ppm over the entire industrial temperature range of −40 to <inline-formula> <tex-math>$+ 85~^{circ } $ </tex-math></inline-formula>C, with a turnover point near room temperature. Compared with a standalone SE mode or BR resonator, the reported coupled QBR resonator demonstrates a notable reduction in motional impedance and superior frequency-temperature stability, thanks to the large transduction area of the coupled QBR resonator and the excellent frequency-temperature stability of the SE mode resonator as the core coupling element. In light of its decent performance, the coupled QBR resonator has promising application prospects in the field of temperature-compensated MEMS oscillators (TCMOs). [2025-0054]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 4","pages":"365-367"},"PeriodicalIF":3.1,"publicationDate":"2025-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144758285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-30DOI: 10.1109/JMEMS.2025.3560138
Shun Yasunaga;Motohiko Ezawa;Yoshio Mita
In-plane moving MEMS bistable elements with symmetrical stable states can be realized using post-process compression of a straight beam to be made buckle. This paper derives and experimentally demonstrates an analytical theory of this element. Design parameters of the component structures, a buckling beam, supporting arms, and compression mechanisms with a receptacle that can be made flexible are related to the behavior including the beam’s profile, the force required to make a flip to the other state, and the displacement where the flip happens. Test devices were fabricated using the silicon-on-insulator MEMS technique and their response to an electrostatic attraction was measured. The experimental results matched the developed theory. The theory and the experimental results presented in this paper can facilitate the introduction of symmetrical bistable structures as a new mechanical element in future MEMS devices. [2025-0002]
{"title":"Theory and Experimental Demonstration of Symmetrically Bistable MEMS Pin-Joint Buckled Beam","authors":"Shun Yasunaga;Motohiko Ezawa;Yoshio Mita","doi":"10.1109/JMEMS.2025.3560138","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3560138","url":null,"abstract":"In-plane moving MEMS bistable elements with symmetrical stable states can be realized using post-process compression of a straight beam to be made buckle. This paper derives and experimentally demonstrates an analytical theory of this element. Design parameters of the component structures, a buckling beam, supporting arms, and compression mechanisms with a receptacle that can be made flexible are related to the behavior including the beam’s profile, the force required to make a flip to the other state, and the displacement where the flip happens. Test devices were fabricated using the silicon-on-insulator MEMS technique and their response to an electrostatic attraction was measured. The experimental results matched the developed theory. The theory and the experimental results presented in this paper can facilitate the introduction of symmetrical bistable structures as a new mechanical element in future MEMS devices. [2025-0002]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 4","pages":"408-421"},"PeriodicalIF":3.1,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144756771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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