Pub Date : 2024-08-01DOI: 10.1109/JMEMS.2024.3431576
Tianyi Zhang;Yen-Wei Chang;Omar Barrera;Naveed Ahmed;Jack Kramer;Ruochen Lu
This work reports the procedure for modeling piezoelectric acoustic resonators and filters at millimeter wave (mmWave). Different from conventional methods for lower frequency piezoelectric devices, we include both acoustic and electromagnetic (EM) effects, e.g., self-inductance, in both the circuit-level fitting and finite element analysis, toward higher accuracy at higher frequencies. To validate the method, thin-film lithium niobate (LiNbO3) first-order antisymmetric (A1) mode devices are used as the testbed, achieving great agreement for both the standalone resonators and a fifth-order ladder filter. Upon further development, the reported acoustic and EM co-modeling could guide the future design of compact piezoelectric devices at mmWave and beyond.[2024-0074]
{"title":"Acoustic and Electromagnetic Co-Modeling of Piezoelectric Devices at Millimeter Wave","authors":"Tianyi Zhang;Yen-Wei Chang;Omar Barrera;Naveed Ahmed;Jack Kramer;Ruochen Lu","doi":"10.1109/JMEMS.2024.3431576","DOIUrl":"10.1109/JMEMS.2024.3431576","url":null,"abstract":"This work reports the procedure for modeling piezoelectric acoustic resonators and filters at millimeter wave (mmWave). Different from conventional methods for lower frequency piezoelectric devices, we include both acoustic and electromagnetic (EM) effects, e.g., self-inductance, in both the circuit-level fitting and finite element analysis, toward higher accuracy at higher frequencies. To validate the method, thin-film lithium niobate (LiNbO3) first-order antisymmetric (A1) mode devices are used as the testbed, achieving great agreement for both the standalone resonators and a fifth-order ladder filter. Upon further development, the reported acoustic and EM co-modeling could guide the future design of compact piezoelectric devices at mmWave and beyond.[2024-0074]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 5","pages":"640-645"},"PeriodicalIF":2.5,"publicationDate":"2024-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141887090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-01DOI: 10.1109/JMEMS.2024.3422734
{"title":"Journal of Microelectromechanical Systems Publication Information","authors":"","doi":"10.1109/JMEMS.2024.3422734","DOIUrl":"10.1109/JMEMS.2024.3422734","url":null,"abstract":"","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 4","pages":"C2-C2"},"PeriodicalIF":2.5,"publicationDate":"2024-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10619999","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141884705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-31DOI: 10.1109/JMEMS.2024.3430984
Xingyu Du;Nishant Sharma;Zichen Tang;Chloe Leblanc;Deep Jariwala;Roy H. Olsson
Surface Acoustic Wave (SAW) devices featuring Aluminum Scandium Nitride (AlScN) on a 4H-Silicon Carbide (SiC) substrate, offer a unique blend of high sound velocity, low thermal resistance, substantial piezoelectric response, simplified fabrication, as well as suitability for high-temperature and harsh environment operation. This study presents high-frequency SAW resonators employing AlScN thin films on SiC substrates, utilizing the second SAW mode (referred to as the Sezawa mode). The resonators achieve remarkable performance, boasting a K $^{mathrm {2}}$ value of 5.5% at 4.7 GHz and a maximum Bode-Q (Q $_{mathrm {max}}$ ) of 911 at 4.3 GHz, outperforming previous AlScN SAW devices. Additionally, a SAW resonator with a $0.96~mu $ m wavelength attains 5.9 GHz frequency with K $^{mathrm {2}}$ of 4.0% and Q $_{mathrm {max}}$ of 762. Our study underscores the potential of the AlScN on SiC platform for advanced radio-frequency applications. [2024-0075]
{"title":"Near 6-GHz Sezawa Mode Surface Acoustic Wave Resonators Using AlScN on SiC","authors":"Xingyu Du;Nishant Sharma;Zichen Tang;Chloe Leblanc;Deep Jariwala;Roy H. Olsson","doi":"10.1109/JMEMS.2024.3430984","DOIUrl":"10.1109/JMEMS.2024.3430984","url":null,"abstract":"Surface Acoustic Wave (SAW) devices featuring Aluminum Scandium Nitride (AlScN) on a 4H-Silicon Carbide (SiC) substrate, offer a unique blend of high sound velocity, low thermal resistance, substantial piezoelectric response, simplified fabrication, as well as suitability for high-temperature and harsh environment operation. This study presents high-frequency SAW resonators employing AlScN thin films on SiC substrates, utilizing the second SAW mode (referred to as the Sezawa mode). The resonators achieve remarkable performance, boasting a K\u0000<inline-formula> <tex-math>$^{mathrm {2}}$ </tex-math></inline-formula>\u0000 value of 5.5% at 4.7 GHz and a maximum Bode-Q (Q\u0000<inline-formula> <tex-math>$_{mathrm {max}}$ </tex-math></inline-formula>\u0000) of 911 at 4.3 GHz, outperforming previous AlScN SAW devices. Additionally, a SAW resonator with a \u0000<inline-formula> <tex-math>$0.96~mu $ </tex-math></inline-formula>\u0000m wavelength attains 5.9 GHz frequency with K\u0000<inline-formula> <tex-math>$^{mathrm {2}}$ </tex-math></inline-formula>\u0000 of 4.0% and Q\u0000<inline-formula> <tex-math>$_{mathrm {max}}$ </tex-math></inline-formula>\u0000 of 762. Our study underscores the potential of the AlScN on SiC platform for advanced radio-frequency applications. [2024-0075]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 5","pages":"577-585"},"PeriodicalIF":2.5,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141865032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-30DOI: 10.1109/JMEMS.2024.3426111
P. Urbański;T. Grzebyk
In this letter we present the first stand-alone X-ray source made in MEMS (micro-electro-mechanical system) technology, which is able to operate outside a vacuum chamber. We have overcome the existing problems with hermetic sealing, high vacuum stabilization and risk of electric short-circuits which have so far prevented the realization of such a device. The source is $30times 16 times 7$ mm3, operates up to 30 keV, with currents reaching few hundred microamperes. Due to the technological compatibility with other MEMS structures and possibility of adjusting its parameters, this source can be easily applied in different X-ray experiments performed in micro scale. [2024-0103]
在这封信中，我们介绍了首个采用 MEMS（微机电系统）技术制造的独立 X 射线源，它能够在真空室外运行。我们克服了现有的密封性、高真空稳定性和电短路风险等问题，这些问题迄今为止一直阻碍着此类设备的实现。该源的体积为 30×16×7$ mm3，工作电压高达 30 keV，电流达到几百微安。由于与其他微机电系统结构的技术兼容性以及调整其参数的可能性，该源可以很容易地应用于在微尺度上进行的各种 X 射线实验。[2024-0103]
{"title":"MEMS-Compatible X-Ray Source","authors":"P. Urbański;T. Grzebyk","doi":"10.1109/JMEMS.2024.3426111","DOIUrl":"10.1109/JMEMS.2024.3426111","url":null,"abstract":"In this letter we present the first stand-alone X-ray source made in MEMS (micro-electro-mechanical system) technology, which is able to operate outside a vacuum chamber. We have overcome the existing problems with hermetic sealing, high vacuum stabilization and risk of electric short-circuits which have so far prevented the realization of such a device. The source is \u0000<inline-formula> <tex-math>$30times 16 times 7$ </tex-math></inline-formula>\u0000 mm3, operates up to 30 keV, with currents reaching few hundred microamperes. Due to the technological compatibility with other MEMS structures and possibility of adjusting its parameters, this source can be easily applied in different X-ray experiments performed in micro scale. [2024-0103]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 5","pages":"508-510"},"PeriodicalIF":2.5,"publicationDate":"2024-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10614716","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141864762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work, we present resonator temperature coefficient of frequency (TCf) manipulation method by using the Duffing nonlinearities and non-dispersive coupling in two resonance modes within the same acoustic cavity. This temperature sensing technique leverages parametric pumping with a lock-in frequency, concurrently inducing signal and idler tones with opposite TCf signs. To demonstrate temperature sensing, aluminum scandium nitride (Al $_{mathrm {1-x}}$ ScxN) (x =0.2) drumhead nanomechanical resonators with two resonance modes of vibration (0,1) and (1,1) are fabricated, and the TCf trends of the driven resonance modes and parametrically induced modes are carefully studied. A signal TC $f_{1}$ of −178 ppm/K and an idler TC $f_{2}$ of +88 ppm/K with a linear trend is experimentally measured, marking the first positive TCf measured on resonators with a negative driven-mode TCf. A one-dimensional lumped parameter model is presented to elucidate the underlying mechanisms of generating opposite TCf signs, showing an excellent match with the measured data. Furthermore, we demonstrate direct TCf manipulations through beat frequency ( $f_{b}$ ) modulation, using internal mixing of the induced signals and their harmonics, which can improve the temperature tunability of the resonant system. The presented work drastically simplifies the system-level integration of the resonant sensing systems by eliminating the need for interface electronics and dual feedback loops. [2024-0080]
{"title":"TC f Manipulation in AlScN Nanomechanical Resonators Using Dual-Mode Parametric Excitation","authors":"Yue Zheng;Seyyed Mojtaba Hassani Gangaraj;Jialin Wang;Mingyo Park;Yifan Fang;Azadeh Ansari","doi":"10.1109/JMEMS.2024.3425798","DOIUrl":"10.1109/JMEMS.2024.3425798","url":null,"abstract":"In this work, we present resonator temperature coefficient of frequency (TCf) manipulation method by using the Duffing nonlinearities and non-dispersive coupling in two resonance modes within the same acoustic cavity. This temperature sensing technique leverages parametric pumping with a lock-in frequency, concurrently inducing signal and idler tones with opposite TCf signs. To demonstrate temperature sensing, aluminum scandium nitride (Al\u0000<inline-formula> <tex-math>$_{mathrm {1-x}}$ </tex-math></inline-formula>\u0000ScxN) (x =0.2) drumhead nanomechanical resonators with two resonance modes of vibration (0,1) and (1,1) are fabricated, and the TCf trends of the driven resonance modes and parametrically induced modes are carefully studied. A signal TC\u0000<inline-formula> <tex-math>$f_{1}$ </tex-math></inline-formula>\u0000 of −178 ppm/K and an idler TC\u0000<inline-formula> <tex-math>$f_{2}$ </tex-math></inline-formula>\u0000 of +88 ppm/K with a linear trend is experimentally measured, marking the first positive TCf measured on resonators with a negative driven-mode TCf. A one-dimensional lumped parameter model is presented to elucidate the underlying mechanisms of generating opposite TCf signs, showing an excellent match with the measured data. Furthermore, we demonstrate direct TCf manipulations through beat frequency (\u0000<inline-formula> <tex-math>$f_{b}$ </tex-math></inline-formula>\u0000) modulation, using internal mixing of the induced signals and their harmonics, which can improve the temperature tunability of the resonant system. The presented work drastically simplifies the system-level integration of the resonant sensing systems by eliminating the need for interface electronics and dual feedback loops. [2024-0080]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 5","pages":"620-630"},"PeriodicalIF":2.5,"publicationDate":"2024-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141775756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This work presents a detailed study on the design of microelectromechanical system (MEMS) matching networks (MN) for low-power wake-up receivers (WuRX) operating in GHz frequency bands. To enhance the WuRX sensitivity, a co-design theory between the MN and CMOS energy detector (ED) is proposed and derived quantitatively to give the optimal circuit topology and design under different scenarios of effective quality factor ( $Q_{eff}$ ), when the MEMS resonator is modeled as an effective inductive ( $L_{eff}$ ) matching element. To verify the proposed design theory as well as the high performance of MEMS MN (MMN), CMOS ED chips and various FBAR resonators of different sizes were fabricated and tested. Measurement results show that the demonstrated MMN achieves relative sensitivity gain ( $A_{sens}$ ) and voltage gain ( $G_{v}$ ) of 8.6 dB and 19.9 dB, respectively. The measured $A_{sens}$ is the highest among all reported MMNs with similar ED input capacitance operating at GHz frequencies.[2024-0090]
本文详细研究了工作在 GHz 频段的低功耗唤醒接收器（WuRX）的微机电系统（MEMS）匹配网络（MN）设计。为了提高唤醒接收器（WuRX）的灵敏度，本文提出了微机电系统匹配网络（MN）和 CMOS 能量检测器（ED）之间的协同设计理论，并定量推导出在不同有效品质因数（$Q_{eff}$）情况下的最佳电路拓扑和设计，此时 MEMS 谐振器被建模为有效电感（$L_{eff}$）匹配元件。为了验证所提出的设计理论以及 MEMS MN（MMN）的高性能，我们制作并测试了 CMOS ED 芯片和各种不同尺寸的 FBAR 谐振器。测量结果表明，所演示的 MMN 的相对灵敏度增益（$A_{sens}$）和电压增益（$G_{v}$）分别达到了 8.6 dB 和 19.9 dB。所测得的 $A_{sens}$ 是所有已报道的在 GHz 频率下工作、具有类似 ED 输入电容的 MMN 中最高的。
{"title":"Optimization of MEMS Matching Network for the Sensitivity of GHz Low-Power Wake-Up Receivers","authors":"Jingsong Liu;Fuhong Lin;Maoyang Qiu;Yiming Wang;Chengjie Zuo","doi":"10.1109/JMEMS.2024.3430511","DOIUrl":"10.1109/JMEMS.2024.3430511","url":null,"abstract":"This work presents a detailed study on the design of microelectromechanical system (MEMS) matching networks (MN) for low-power wake-up receivers (WuRX) operating in GHz frequency bands. To enhance the WuRX sensitivity, a co-design theory between the MN and CMOS energy detector (ED) is proposed and derived quantitatively to give the optimal circuit topology and design under different scenarios of effective quality factor (\u0000<inline-formula> <tex-math>$Q_{eff}$ </tex-math></inline-formula>\u0000), when the MEMS resonator is modeled as an effective inductive (\u0000<inline-formula> <tex-math>$L_{eff}$ </tex-math></inline-formula>\u0000) matching element. To verify the proposed design theory as well as the high performance of MEMS MN (MMN), CMOS ED chips and various FBAR resonators of different sizes were fabricated and tested. Measurement results show that the demonstrated MMN achieves relative sensitivity gain (\u0000<inline-formula> <tex-math>$A_{sens}$ </tex-math></inline-formula>\u0000) and voltage gain (\u0000<inline-formula> <tex-math>$G_{v}$ </tex-math></inline-formula>\u0000) of 8.6 dB and 19.9 dB, respectively. The measured \u0000<inline-formula> <tex-math>$A_{sens}$ </tex-math></inline-formula>\u0000 is the highest among all reported MMNs with similar ED input capacitance operating at GHz frequencies.[2024-0090]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 5","pages":"596-603"},"PeriodicalIF":2.5,"publicationDate":"2024-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141775691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study presents a novel microfabrication approach using anodic bonding and glass thermal reflow to fabricate glass-based micro-hotplates with low power consumption owing to the low thermal conductivity coefficient. The glass-film-suspended micro-hotplate, integrated with through glass via (TGV) structure, is achieved by anodic bonding a glass substrate with a patterned silicon (Si) wafer, followed by thermal reflow of the glass substrate around the patterned Si wafer. TGV structures, wherein conductive Si columns are inserted into the glass substrate, have the potential to replace wire-bonders for electrical interconnection with integrated circuit (IC) boards. The fabricated glass-film-suspended micro-hotplates with $sim 20mu $ m thickness demonstrate significantly lower power consumption and higher heating efficiency, compared to equivalent dimensions in Si-based counterparts. It is noted that the thermal conductivity coefficient of Pyrex glass should be corrected after thermal reflow, due to water evaporation and glass substrate recrystallization. Furthermore, our microfabrication approach for precisely patterning glass-based microstructures can be applicable to other glass-based MEMS devices for three-dimensional (3D) integrated microsystems.[2024-0100]
本研究提出了一种新颖的微制造方法，利用阳极键合和玻璃热回流来制造玻璃基微热板，由于热传导系数低，因此功耗低。通过阳极键合玻璃基板和有图案的硅（Si）晶片，然后在有图案的硅晶片周围对玻璃基板进行热回流，就能制造出集成有玻璃通孔（TGV）结构的玻璃薄膜悬浮微加热板。导电硅柱插入玻璃基板的 TGV 结构有可能取代集成电路 (IC) 板电气互连的导线粘合剂。与同等尺寸的硅基微热板相比，厚度为20微米的玻璃薄膜悬浮微热板的功耗更低，加热效率更高。值得注意的是，由于水分蒸发和玻璃基板再结晶的原因，百耐克斯玻璃的导热系数应在热回流后进行修正。此外，我们用于精确图案化玻璃基微结构的微制造方法可适用于三维集成微系统的其他玻璃基 MEMS 器件[2024-0100]。
{"title":"Glass-Based Micro-Hotplate With Low Power Consumption and TGV Structure Through Anodic Bonding and Glass Thermal Reflow","authors":"Honglin Qian;Linxin Chen;Haotian Dai;Fanhong Chen;Shuai Liu;Xiaohui Du;Shuo Gao;Yonggang Jiang;Bing Li;Minjie Zhu;Gaopeng Xue","doi":"10.1109/JMEMS.2024.3425846","DOIUrl":"10.1109/JMEMS.2024.3425846","url":null,"abstract":"This study presents a novel microfabrication approach using anodic bonding and glass thermal reflow to fabricate glass-based micro-hotplates with low power consumption owing to the low thermal conductivity coefficient. The glass-film-suspended micro-hotplate, integrated with through glass via (TGV) structure, is achieved by anodic bonding a glass substrate with a patterned silicon (Si) wafer, followed by thermal reflow of the glass substrate around the patterned Si wafer. TGV structures, wherein conductive Si columns are inserted into the glass substrate, have the potential to replace wire-bonders for electrical interconnection with integrated circuit (IC) boards. The fabricated glass-film-suspended micro-hotplates with \u0000<inline-formula> <tex-math>$sim 20mu $ </tex-math></inline-formula>\u0000 m thickness demonstrate significantly lower power consumption and higher heating efficiency, compared to equivalent dimensions in Si-based counterparts. It is noted that the thermal conductivity coefficient of Pyrex glass should be corrected after thermal reflow, due to water evaporation and glass substrate recrystallization. Furthermore, our microfabrication approach for precisely patterning glass-based microstructures can be applicable to other glass-based MEMS devices for three-dimensional (3D) integrated microsystems.[2024-0100]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 5","pages":"610-619"},"PeriodicalIF":2.5,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141741655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-18DOI: 10.1109/JMEMS.2024.3425956
Xingli Xu;Yuewu Gong;Zhuochen Wang;Yongquan Ma;Chenyang Yu;Wei Wei;Pengfei Niu;Wei Pang
Common methods to enhance PMUT arrays’ Bandwidth (BW) may compromise the sensitivity and fill factor. This study introduces a novel PMUT array with circular suspended plate structure and variable mass load atop the membranes to establish identical cell size but different resonant frequencies, and finally achieves a broad BW, improved sensitivity and augmented fill factor. Four such kinds PMUT arrays (20 element $times 25$ cells) with different mass loads are studied and compared to traditional one with clamped boundary. In each design, 13 variations of cells equipped with varying-diameter mass load are integrated in one element (25 cells), resulting in a notable large BW. This design features PMUTs with an equidimensional cell size, leading a heightened filling factor compared to current wideband PMUTs with multi-size cells. Prototyped devices are fabricated and show a 1.7X improvement in membrane volume displacement, 1.5X higher ultrasound pulse-echo sensitivity and 5.2X increase in BW, from 17% to 89% @ 5.5 MHz center frequency, comparing to the traditional one. This innovative design suggests a promising solution for high sensitivity and wideband PMUT arrays, benefiting high-quality ultrasound imaging. [2024-0055]
{"title":"Equidimensional Piezoelectric Micromachined Ultrasonic Transducer Array With Synchronously Improved Bandwidth and Sensitivity","authors":"Xingli Xu;Yuewu Gong;Zhuochen Wang;Yongquan Ma;Chenyang Yu;Wei Wei;Pengfei Niu;Wei Pang","doi":"10.1109/JMEMS.2024.3425956","DOIUrl":"10.1109/JMEMS.2024.3425956","url":null,"abstract":"Common methods to enhance PMUT arrays’ Bandwidth (BW) may compromise the sensitivity and fill factor. This study introduces a novel PMUT array with circular suspended plate structure and variable mass load atop the membranes to establish identical cell size but different resonant frequencies, and finally achieves a broad BW, improved sensitivity and augmented fill factor. Four such kinds PMUT arrays (20 element \u0000<inline-formula> <tex-math>$times 25$ </tex-math></inline-formula>\u0000 cells) with different mass loads are studied and compared to traditional one with clamped boundary. In each design, 13 variations of cells equipped with varying-diameter mass load are integrated in one element (25 cells), resulting in a notable large BW. This design features PMUTs with an equidimensional cell size, leading a heightened filling factor compared to current wideband PMUTs with multi-size cells. Prototyped devices are fabricated and show a 1.7X improvement in membrane volume displacement, 1.5X higher ultrasound pulse-echo sensitivity and 5.2X increase in BW, from 17% to 89% @ 5.5 MHz center frequency, comparing to the traditional one. This innovative design suggests a promising solution for high sensitivity and wideband PMUT arrays, benefiting high-quality ultrasound imaging. [2024-0055]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 5","pages":"511-513"},"PeriodicalIF":2.5,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141741656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-16DOI: 10.1109/JMEMS.2024.3424810
Yi Zhou;Zhuolin Yu;Zhaorong Ke;Shaolei Ge;Shenhu Huang;Jianpeng Wang;Tong Zhou;Yan Su
To solve the problem of circuit phase error induced quadrature error coupling into the rate output of the gyroscope operating in force-to-rebalance (FRB) mode, a rapid circuit phase error identification and compensation method is proposed in this paper. Firstly, the main sources of phase error in control circuit and the influence of phase error on drive mode and sense mode of micro-electro-mechanical system (MEMS) quad mass gyroscope (QMG) are theoretically analyzed. Then, a rapid circuit phase error identification and compensation method utilizing Recursive Least Squares (RLS) algorithm is proposed, achieving identification time under 1 s and 99.7% reduction in zero-rate output (ZRO) drift. This method leverages the disparity between the magnitudes of quadrature error and damping coupling error during the rapid temperature rise of the gyroscope after startup. The output of closed-loop quadrature suppression and FRB loop is used as the input of the RLS algorithm. The algorithm is carefully engineered to ascertain the phase error within 1s, thereby facilitating the expeditious rectification of the control circuit’s phase error. The effectiveness of the proposed method is verified through rotation experiments, with an identification error of less than 0.2%. The experimental results show that when using this method, the bias instability (BI) of the gyroscope is reduced from 2.218 °/h to 0.165 °/h, a total reduction of 13.4 times, while the ARW remains unchanged.
{"title":"A Rapid Circuit Phase Error Identification and Compensation Method for MEMS QMG Achieving 99.7% Reduction in ZRO Drift","authors":"Yi Zhou;Zhuolin Yu;Zhaorong Ke;Shaolei Ge;Shenhu Huang;Jianpeng Wang;Tong Zhou;Yan Su","doi":"10.1109/JMEMS.2024.3424810","DOIUrl":"10.1109/JMEMS.2024.3424810","url":null,"abstract":"To solve the problem of circuit phase error induced quadrature error coupling into the rate output of the gyroscope operating in force-to-rebalance (FRB) mode, a rapid circuit phase error identification and compensation method is proposed in this paper. Firstly, the main sources of phase error in control circuit and the influence of phase error on drive mode and sense mode of micro-electro-mechanical system (MEMS) quad mass gyroscope (QMG) are theoretically analyzed. Then, a rapid circuit phase error identification and compensation method utilizing Recursive Least Squares (RLS) algorithm is proposed, achieving identification time under 1 s and 99.7% reduction in zero-rate output (ZRO) drift. This method leverages the disparity between the magnitudes of quadrature error and damping coupling error during the rapid temperature rise of the gyroscope after startup. The output of closed-loop quadrature suppression and FRB loop is used as the input of the RLS algorithm. The algorithm is carefully engineered to ascertain the phase error within 1s, thereby facilitating the expeditious rectification of the control circuit’s phase error. The effectiveness of the proposed method is verified through rotation experiments, with an identification error of less than 0.2%. The experimental results show that when using this method, the bias instability (BI) of the gyroscope is reduced from 2.218 °/h to 0.165 °/h, a total reduction of 13.4 times, while the ARW remains unchanged.","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 5","pages":"646-655"},"PeriodicalIF":2.5,"publicationDate":"2024-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141717548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-15DOI: 10.1109/JMEMS.2024.3423768
Tzu-Hsuan Hsu;Joshua Campbell;Jack Kramer;Sinwoo Cho;Ming-Huang Li;Ruochen Lu
In this work, we demonstrate a C-band shear-horizontal surface acoustic wave (SH-SAW) resonator with high electromechanical coupling ( ${k}_{mathbf {t}}^{mathbf {2}}$ ) of 22% and a quality factor (Q) of 565 based on a thin-film lithium niobate (LN) on silicon carbide (SiC) platform, featuring an excellent figure-of-merit (FoM $= {k}_{mathbf {t}}^{mathbf {2}}cdot Q_{max}$ ) of 124 at 6.5 GHz, the highest FoM reported in this frequency range. The resonator frequency upscaling is achieved through wavelength ( $lambda $ ) reduction and the use of thin aluminum (Al) electrodes. The LN/SiC waveguide and synchronous resonator design collectively enable effective acoustic energy confinement for a high FoM, even when the normalized thickness of LN approaches a scale of $0.5lambda $ to $1lambda $ . To perform a comprehensive study, we also designed and fabricated five additional resonators, expanding the $lambda $ studied ranging from 480 to 800 nm, in the same 500 nm-thick transferred Y-cut thin-film LN on SiC. The fabricated SH-SAW resonators, operating from 5 to 8 GHz, experimentally demonstrate a ${k}_{mathbf {t}}^{mathbf {2}}$ from 20.3% to 22.9% and a Q from 350 to 575, thereby covering the entire C-band with excellent performance. [2024-0070]
{"title":"C-Band Lithium Niobate on Silicon Carbide SAW Resonator With Figure-of-Merit of 124 at 6.5 GHz","authors":"Tzu-Hsuan Hsu;Joshua Campbell;Jack Kramer;Sinwoo Cho;Ming-Huang Li;Ruochen Lu","doi":"10.1109/JMEMS.2024.3423768","DOIUrl":"10.1109/JMEMS.2024.3423768","url":null,"abstract":"In this work, we demonstrate a C-band shear-horizontal surface acoustic wave (SH-SAW) resonator with high electromechanical coupling (\u0000<inline-formula> <tex-math>${k}_{mathbf {t}}^{mathbf {2}}$ </tex-math></inline-formula>\u0000) of 22% and a quality factor (Q) of 565 based on a thin-film lithium niobate (LN) on silicon carbide (SiC) platform, featuring an excellent figure-of-merit (FoM \u0000<inline-formula> <tex-math>$= {k}_{mathbf {t}}^{mathbf {2}}cdot Q_{max}$ </tex-math></inline-formula>\u0000) of 124 at 6.5 GHz, the highest FoM reported in this frequency range. The resonator frequency upscaling is achieved through wavelength (\u0000<inline-formula> <tex-math>$lambda $ </tex-math></inline-formula>\u0000) reduction and the use of thin aluminum (Al) electrodes. The LN/SiC waveguide and synchronous resonator design collectively enable effective acoustic energy confinement for a high FoM, even when the normalized thickness of LN approaches a scale of \u0000<inline-formula> <tex-math>$0.5lambda $ </tex-math></inline-formula>\u0000 to \u0000<inline-formula> <tex-math>$1lambda $ </tex-math></inline-formula>\u0000. To perform a comprehensive study, we also designed and fabricated five additional resonators, expanding the \u0000<inline-formula> <tex-math>$lambda $ </tex-math></inline-formula>\u0000 studied ranging from 480 to 800 nm, in the same 500 nm-thick transferred Y-cut thin-film LN on SiC. The fabricated SH-SAW resonators, operating from 5 to 8 GHz, experimentally demonstrate a \u0000<inline-formula> <tex-math>${k}_{mathbf {t}}^{mathbf {2}}$ </tex-math></inline-formula>\u0000 from 20.3% to 22.9% and a Q from 350 to 575, thereby covering the entire C-band with excellent performance. [2024-0070]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 5","pages":"604-609"},"PeriodicalIF":2.5,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141717547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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