Pub Date : 2024-12-31DOI: 10.1109/JMEMS.2024.3522404
{"title":"2024 Index Journal of Microelectromechanical Systems Vol. 33","authors":"","doi":"10.1109/JMEMS.2024.3522404","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3522404","url":null,"abstract":"","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 6","pages":"807-828"},"PeriodicalIF":2.5,"publicationDate":"2024-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10818783","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142905693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-30DOI: 10.1109/JMEMS.2024.3518622
Guijie Wang;Shenglin Hou;Lifang Ran;Jianhua Li;Bo Zhang;Xiaolong Wen;Najib Kacem;Ashwin A. Seshia
High-resolution and sensitive MEMS DC electric field sensors offer the possibility for the integration of detection in multiple fields, such as atmospheric electricity, power grids and biomedical sciences. In this work, a mode-localized sensor prototype based on a double-ended tuning fork design (DETF) is presented. The theoretical derivations and lumped model simulations reveal the key performance enhancements regarding the wide measurement range and high resolution of such a coupled resonator structure. A prototype is fabricated using Silicon-On-insulator (SOI) approaches, which is further tested to achieve a sensitivity of 0.016/(kV/m), a resolution of 21.3 V/m, a measurement range of 200kV/m and a bias instability of 0.29 V/m. The metrics are improved compared to the traditional Euler beam designs and the micro-machined counterparts. This shows the capability to meet the demands for electric field sensing in modern atmospheric electricity, power grids and biomedical sciences, with enhanced sensitivity, measurement range and stability.[2024-0154]
{"title":"A Weakly Coupled Tuning Fork MEMS Electric Field Sensor With High Resolution and Wide Measurement Range","authors":"Guijie Wang;Shenglin Hou;Lifang Ran;Jianhua Li;Bo Zhang;Xiaolong Wen;Najib Kacem;Ashwin A. Seshia","doi":"10.1109/JMEMS.2024.3518622","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3518622","url":null,"abstract":"High-resolution and sensitive MEMS DC electric field sensors offer the possibility for the integration of detection in multiple fields, such as atmospheric electricity, power grids and biomedical sciences. In this work, a mode-localized sensor prototype based on a double-ended tuning fork design (DETF) is presented. The theoretical derivations and lumped model simulations reveal the key performance enhancements regarding the wide measurement range and high resolution of such a coupled resonator structure. A prototype is fabricated using Silicon-On-insulator (SOI) approaches, which is further tested to achieve a sensitivity of 0.016/(kV/m), a resolution of 21.3 V/m, a measurement range of 200kV/m and a bias instability of 0.29 V/m. The metrics are improved compared to the traditional Euler beam designs and the micro-machined counterparts. This shows the capability to meet the demands for electric field sensing in modern atmospheric electricity, power grids and biomedical sciences, with enhanced sensitivity, measurement range and stability.[2024-0154]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 1","pages":"82-91"},"PeriodicalIF":2.5,"publicationDate":"2024-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-27DOI: 10.1109/JMEMS.2024.3515098
Connor A. Watkins;Jaesung Lee;Jonathan P. McCandless;Harris J. Hall;X.-L. Feng Philip
This paper reports on single-crystal silicon (Si) thermal-piezoresistive resonators (TPRs) achieving ~0.2ppb-level frequency stability in phase-locked loop (PLL) measurements. A pair of resonators operating in a balanced-bridge configuration is presented, with one device being driven at resonance and the other used to null the parasitic background responses. The resonance frequency of the driven TPR has been measured over 40 hours with closed-loop continuous tracking by PLL and yields an Allan deviation $sigma _{text {A}} approx 2.66$ ppb at an averaging time of $tau approx 4.95$ s which is the best reported value among all Si TPRs studied to date. Further, an external DC power feedback loop is implemented alongside the PLL to enhance the frequency stability of the TPR, to achieve $sigma _{text {A}} approx 0.236$ ppb at $tau approx 1.2$ s, the best short-term frequency stability among all reported Si MEMS counterparts. This result suggests that such TPRs with precise DC control can potentially achieve frequency stabilities comparable to, or better than, existing state-of-the-art resonators used in oscillator circuits, with significantly reduced external thermal control requirements and power demands.[2024-0121]
{"title":"Single-Crystal Silicon Thermal-Piezoresistive Resonators as High-Stability Frequency References","authors":"Connor A. Watkins;Jaesung Lee;Jonathan P. McCandless;Harris J. Hall;X.-L. Feng Philip","doi":"10.1109/JMEMS.2024.3515098","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3515098","url":null,"abstract":"This paper reports on single-crystal silicon (Si) thermal-piezoresistive resonators (TPRs) achieving ~0.2ppb-level frequency stability in phase-locked loop (PLL) measurements. A pair of resonators operating in a balanced-bridge configuration is presented, with one device being driven at resonance and the other used to null the parasitic background responses. The resonance frequency of the driven TPR has been measured over 40 hours with closed-loop continuous tracking by PLL and yields an Allan deviation <inline-formula> <tex-math>$sigma _{text {A}} approx 2.66$ </tex-math></inline-formula>ppb at an averaging time of <inline-formula> <tex-math>$tau approx 4.95$ </tex-math></inline-formula>s which is the best reported value among all Si TPRs studied to date. Further, an external DC power feedback loop is implemented alongside the PLL to enhance the frequency stability of the TPR, to achieve <inline-formula> <tex-math>$sigma _{text {A}} approx 0.236$ </tex-math></inline-formula>ppb at <inline-formula> <tex-math>$tau approx 1.2$ </tex-math></inline-formula>s, the best short-term frequency stability among all reported Si MEMS counterparts. This result suggests that such TPRs with precise DC control can potentially achieve frequency stabilities comparable to, or better than, existing state-of-the-art resonators used in oscillator circuits, with significantly reduced external thermal control requirements and power demands.[2024-0121]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 1","pages":"15-23"},"PeriodicalIF":2.5,"publicationDate":"2024-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper, for the first time, introduces filling and oxidation of silicon powders (FOSP) into through-silicon insulation, and develops a single-crystalline-silicon (SCS) through-silicon-via (TSV) for MEMS front-end process. Submicron silicon powders are filled into annular trenches on one side of low-resistivity SCS wafer by a silica-gel scraper, which is followed by surface cleaning to wipe off residual powders and oxidation to turn these trench-filled incompact silicon powders into solidified SiO2 liner respectively. After the same process is carried out on the other side, isolated conductive silicon pillars are formed and strongly anchored to the substrate. The FOSP-based SCS TSV wafer is tolerant to high temperature and acid, and hardly influenced by coefficient of thermal expansion (CTE) mismatch. Thinning step is omitted in its fabrication process, which guarantees low total thickness variation (TTV). A 6-inch FOSP-based SCS TSV wafer with $380mu $ m thickness and 20480 vias has been developed successfully. Its structure strength, air-tightness, TTV and warpage are studied. Measurement results show that the leakage current per TSV is about 0.2pA at 20V, and the resistance of conductive silicon pillar ranges from $50Omega $ to $140Omega $ ($0.017sim 0.022Omega cdot $ cm resistivity and $66mu $ m/$88mu $ m diameter). Furthermore, with a testing process, the FOSP-based SCS TSV wafer is proven qualified for metal thermocompression bonding, forming an integrated wafer that can go through grinding and deep reactive ion etching (DRIE). The proposed SCS TSV technology is not restrained by wafer thickness and depth-to-width ratio of DRIE, so it can be applied to large-sized SCS wafer.[2024-0127]
{"title":"MEMS-Oriented Single-Crystalline-Silicon Through-Silicon-Via Based on Filling and Oxidation of Silicon Powders","authors":"Biyun Ling;Minli Cai;Bo Chen;Xiaoyue Wang;Biqing Zhou;Yuhu Xia;Yuwei Han;Yaming Wu","doi":"10.1109/JMEMS.2024.3514902","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3514902","url":null,"abstract":"This paper, for the first time, introduces filling and oxidation of silicon powders (FOSP) into through-silicon insulation, and develops a single-crystalline-silicon (SCS) through-silicon-via (TSV) for MEMS front-end process. Submicron silicon powders are filled into annular trenches on one side of low-resistivity SCS wafer by a silica-gel scraper, which is followed by surface cleaning to wipe off residual powders and oxidation to turn these trench-filled incompact silicon powders into solidified SiO2 liner respectively. After the same process is carried out on the other side, isolated conductive silicon pillars are formed and strongly anchored to the substrate. The FOSP-based SCS TSV wafer is tolerant to high temperature and acid, and hardly influenced by coefficient of thermal expansion (CTE) mismatch. Thinning step is omitted in its fabrication process, which guarantees low total thickness variation (TTV). A 6-inch FOSP-based SCS TSV wafer with <inline-formula> <tex-math>$380mu $ </tex-math></inline-formula>m thickness and 20480 vias has been developed successfully. Its structure strength, air-tightness, TTV and warpage are studied. Measurement results show that the leakage current per TSV is about 0.2pA at 20V, and the resistance of conductive silicon pillar ranges from <inline-formula> <tex-math>$50Omega $ </tex-math></inline-formula> to <inline-formula> <tex-math>$140Omega $ </tex-math></inline-formula> (<inline-formula> <tex-math>$0.017sim 0.022Omega cdot $ </tex-math></inline-formula>cm resistivity and <inline-formula> <tex-math>$66mu $ </tex-math></inline-formula>m/<inline-formula> <tex-math>$88mu $ </tex-math></inline-formula>m diameter). Furthermore, with a testing process, the FOSP-based SCS TSV wafer is proven qualified for metal thermocompression bonding, forming an integrated wafer that can go through grinding and deep reactive ion etching (DRIE). The proposed SCS TSV technology is not restrained by wafer thickness and depth-to-width ratio of DRIE, so it can be applied to large-sized SCS wafer.[2024-0127]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 1","pages":"73-81"},"PeriodicalIF":2.5,"publicationDate":"2024-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-27DOI: 10.1109/JMEMS.2024.3516955
Sangho Bang;Chaerin Oh;Sang-Mok Lee;Subeen Kim;Taemin Lee;Seunghyeon Nam;Joontaek Jung;Hyunjoo Jenny Lee
With its excellent yield and potential for mass production, a capacitive micromachined ultrasonic transducer (CMUT) is a promising alternative solution to conventional piezoelectric ultrasound transducers. However, as CMUTs require high bias voltage for operation, reducing the voltage is a critical issue in the industry to overcome the problems of reliability and the need for high-voltage driving circuitry. One of the promising methods to reduce the high bias voltage is to increase the dielectric constant by replacing the insulation layer with a high-k material. Here, we present a new fabrication method for the high-k insulation layer CMUT that maintains the reliability and advantages of silicon wafer-bonded CMUT. Notably, our proposed process eliminates the need for additional photolithography steps to replace the insulation layer with high-k material compared to the conventional CMUT fabrication. In contrast to the conventional CMUT, which employs silicon dioxide film for insulation, our high-k CMUT exhibits a reduction in pull-in voltage of 11.3%. These results suggest the potential for enhanced sensitivity in ultrasonic imaging applications. [2024-0153]
{"title":"Fabrication of Capacitive Micromachined Ultrasonic Transducers With High-k Insulation Layer Using Silicon Fusion Bonding","authors":"Sangho Bang;Chaerin Oh;Sang-Mok Lee;Subeen Kim;Taemin Lee;Seunghyeon Nam;Joontaek Jung;Hyunjoo Jenny Lee","doi":"10.1109/JMEMS.2024.3516955","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3516955","url":null,"abstract":"With its excellent yield and potential for mass production, a capacitive micromachined ultrasonic transducer (CMUT) is a promising alternative solution to conventional piezoelectric ultrasound transducers. However, as CMUTs require high bias voltage for operation, reducing the voltage is a critical issue in the industry to overcome the problems of reliability and the need for high-voltage driving circuitry. One of the promising methods to reduce the high bias voltage is to increase the dielectric constant by replacing the insulation layer with a high-k material. Here, we present a new fabrication method for the high-k insulation layer CMUT that maintains the reliability and advantages of silicon wafer-bonded CMUT. Notably, our proposed process eliminates the need for additional photolithography steps to replace the insulation layer with high-k material compared to the conventional CMUT fabrication. In contrast to the conventional CMUT, which employs silicon dioxide film for insulation, our high-k CMUT exhibits a reduction in pull-in voltage of 11.3%. These results suggest the potential for enhanced sensitivity in ultrasonic imaging applications. [2024-0153]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 1","pages":"65-72"},"PeriodicalIF":2.5,"publicationDate":"2024-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-13DOI: 10.1109/JMEMS.2024.3511476
Oluwatoyin Atikekeresola;C. K. Harnett
Microelectromechanical systems (MEMS) assembly into packages that interface with the environment is critical in electronic sensor applications ranging from soft biomedical systems to telecommunications. This article presents a novel process using heat-depolymerizable polyethylene carbonate (QPAC-25) as a sacrificial tether, and demonstrates it for assembling wafer-bound MEMS onto wires. The assembly mechanism is thermal removal of the tether, allowing a strained layer to pop up from the substrate and make electrical and mechanical contact with the wire. We detail the QPAC-25 fabrication procedures, characterize the relationship between QPAC-25 thickness and spin speed and determine a route to pattern QPAC-25 without a metal hard mask or photosensitizers.[2024-0157]
{"title":"Heat-Depolymerizable Tethers for Microelectromechanical System Assembly","authors":"Oluwatoyin Atikekeresola;C. K. Harnett","doi":"10.1109/JMEMS.2024.3511476","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3511476","url":null,"abstract":"Microelectromechanical systems (MEMS) assembly into packages that interface with the environment is critical in electronic sensor applications ranging from soft biomedical systems to telecommunications. This article presents a novel process using heat-depolymerizable polyethylene carbonate (QPAC-25) as a sacrificial tether, and demonstrates it for assembling wafer-bound MEMS onto wires. The assembly mechanism is thermal removal of the tether, allowing a strained layer to pop up from the substrate and make electrical and mechanical contact with the wire. We detail the QPAC-25 fabrication procedures, characterize the relationship between QPAC-25 thickness and spin speed and determine a route to pattern QPAC-25 without a metal hard mask or photosensitizers.[2024-0157]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 1","pages":"1-3"},"PeriodicalIF":2.5,"publicationDate":"2024-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143106764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-09DOI: 10.1109/JMEMS.2024.3505213
Song Li;Yufei Zhai;Yuxuan Dong;Jianqing Cai;Min Wang
Infrared thermal detectors generate signal output utilizing thermal effect, with detection performance being dictated by the structure design of the detector. To ensure effective thermal insulation, detectors are typically designed with slender supporting beams to reduce thermal conductivity and enhance signal output. In this paper, a fluorescent infrared detector with different isolation beam designs is proposed to investigate the trade-off relationship among detector performance parameters. Two kinds of isolation beams are theoretically derived to minimize the thermal conductivity for specific detection unit, and the thermal detectors with suspending units are manufactured by MEMS technology. The thermal imaging results for a 623 K heat source indicate that the temperature rise for the two-beam structure (i.e. 46.7 K) exceeds that of the four-beam structure (i.e. 38.3 K). Additionally, the detectivity of $4.05times 10^{mathbf {7}}$ cm$cdot $ Hz$^{mathbf {1/2}}$ /W is obtained by the two-beam structure, which is lower than that of the four-beam structure (i.e. $5.80times 10^{mathbf {7}}$ cm$cdot $ Hz$^{mathbf {1/2}}$ /W). The temporal resolution and NETD are also calculated and compared. The findings demonstrate that in designing thermal detectors, deliberately sacrificing a portion of the detectivity within an acceptable range and reducing beam thermal conductivity can significantly enhance temperature rise and increase signal output. [2024-0131]
{"title":"Suspended Insulation Structure Design for Infrared Thermal Detector","authors":"Song Li;Yufei Zhai;Yuxuan Dong;Jianqing Cai;Min Wang","doi":"10.1109/JMEMS.2024.3505213","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3505213","url":null,"abstract":"Infrared thermal detectors generate signal output utilizing thermal effect, with detection performance being dictated by the structure design of the detector. To ensure effective thermal insulation, detectors are typically designed with slender supporting beams to reduce thermal conductivity and enhance signal output. In this paper, a fluorescent infrared detector with different isolation beam designs is proposed to investigate the trade-off relationship among detector performance parameters. Two kinds of isolation beams are theoretically derived to minimize the thermal conductivity for specific detection unit, and the thermal detectors with suspending units are manufactured by MEMS technology. The thermal imaging results for a 623 K heat source indicate that the temperature rise for the two-beam structure (i.e. 46.7 K) exceeds that of the four-beam structure (i.e. 38.3 K). Additionally, the detectivity of <inline-formula> <tex-math>$4.05times 10^{mathbf {7}}$ </tex-math></inline-formula> cm<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>Hz<inline-formula> <tex-math>$^{mathbf {1/2}}$ </tex-math></inline-formula> /W is obtained by the two-beam structure, which is lower than that of the four-beam structure (i.e. <inline-formula> <tex-math>$5.80times 10^{mathbf {7}}$ </tex-math></inline-formula> cm<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>Hz<inline-formula> <tex-math>$^{mathbf {1/2}}$ </tex-math></inline-formula> /W). The temporal resolution and NETD are also calculated and compared. The findings demonstrate that in designing thermal detectors, deliberately sacrificing a portion of the detectivity within an acceptable range and reducing beam thermal conductivity can significantly enhance temperature rise and increase signal output. [2024-0131]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 1","pages":"92-99"},"PeriodicalIF":2.5,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-03DOI: 10.1109/JMEMS.2024.3496135
{"title":"Journal of Microelectromechanical Systems Publication Information","authors":"","doi":"10.1109/JMEMS.2024.3496135","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3496135","url":null,"abstract":"","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 6","pages":"C2-C2"},"PeriodicalIF":2.5,"publicationDate":"2024-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10773390","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-03DOI: 10.1109/JMEMS.2024.3496173
{"title":"TechRxiv: Share Your Preprint Research With the World!","authors":"","doi":"10.1109/JMEMS.2024.3496173","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3496173","url":null,"abstract":"","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 6","pages":"806-806"},"PeriodicalIF":2.5,"publicationDate":"2024-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10773388","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper presents a novel single-chip integrated inline thermoelectric MEMS sensor for measuring the forward and reverse RF power. The sensor operates on the principle of RF power-heat-electricity. It utilizes all-passive structures for near-zero power consumption, with a wide bandwidth (22-30 GHz), high power detection capability (600 mW) and small chip size ($1640times 910~mu $ m2). A MEMS coupling structure with suspended beams is designed to be broadband and miniaturized, while two MEMS sensing structures with optimized thermopiles are designed for high sensitivity and high power detection. This MEMS sensor is fabricated using the GaAs monolithic microwave integrated circuit (MMIC) process. Experiments show a reflection loss of less than −10.40 dB, and an insertion loss of better than −1.55 dB. Linearity of 98.8% is obtained. At 26, 27 and 28 GHz, measured sensitivities are about 4.10, 4.57 and 4.61 $mu $ V/mW for the forward detection, and 0.32, 0.83 and 1.10 $mu $ V/mW for the reverse detection, respectively. The ratios of these sensitivities produce a maximum at the center frequency of interest. [2024-0095]
{"title":"A Novel Inline Near-Zero Thermopile RF MEMS Power Sensor","authors":"Zhiqiang Zhang;Runqi Gu;Zijie Yuan;Yuhao Xie;Tao Jiang;Feilong Lei;Chengxi Sun;Jianqiu Huang","doi":"10.1109/JMEMS.2024.3501477","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3501477","url":null,"abstract":"This paper presents a novel single-chip integrated inline thermoelectric MEMS sensor for measuring the forward and reverse RF power. The sensor operates on the principle of RF power-heat-electricity. It utilizes all-passive structures for near-zero power consumption, with a wide bandwidth (22-30 GHz), high power detection capability (600 mW) and small chip size (<inline-formula> <tex-math>$1640times 910~mu $ </tex-math></inline-formula>m2). A MEMS coupling structure with suspended beams is designed to be broadband and miniaturized, while two MEMS sensing structures with optimized thermopiles are designed for high sensitivity and high power detection. This MEMS sensor is fabricated using the GaAs monolithic microwave integrated circuit (MMIC) process. Experiments show a reflection loss of less than −10.40 dB, and an insertion loss of better than −1.55 dB. Linearity of 98.8% is obtained. At 26, 27 and 28 GHz, measured sensitivities are about 4.10, 4.57 and 4.61 <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>V/mW for the forward detection, and 0.32, 0.83 and 1.10 <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>V/mW for the reverse detection, respectively. The ratios of these sensitivities produce a maximum at the center frequency of interest. [2024-0095]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 1","pages":"59-64"},"PeriodicalIF":2.5,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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