Pub Date : 2023-11-16DOI: 10.1109/JMEMS.2023.3330574
Zhiqiang Zhang;Runqi Gu;Yifei Jiang;Yan Cui;Chunhua Cai
A novel broadband and thermoelectric RF power sensor with the near-zero power consumption is proposed for high dynamic range detection applications. This sensor is based on the RF power-heat-electricity operating principle and is fabricated using microelectromechanical systems (MEMS) and GaAs monolithic microwave integrated circuit (MMIC) processes. During operation, the device consumes no DC power and shows less than −24.2 dB reflection loss up to 25 GHz, due to the fully passive and simple impedance structure. The dynamic range of 42 dB is obtained without sacrificing linearity, due to the robust load and parallel thermocouple design. Experiments also show that the thermoelectric sensor itself can detect 500 mW of RF power. [2023-0134]
{"title":"A Near-Zero Thermoelectric RF Power Sensor for High Dynamic Range Applications","authors":"Zhiqiang Zhang;Runqi Gu;Yifei Jiang;Yan Cui;Chunhua Cai","doi":"10.1109/JMEMS.2023.3330574","DOIUrl":"https://doi.org/10.1109/JMEMS.2023.3330574","url":null,"abstract":"A novel broadband and thermoelectric RF power sensor with the near-zero power consumption is proposed for high dynamic range detection applications. This sensor is based on the RF power-heat-electricity operating principle and is fabricated using microelectromechanical systems (MEMS) and GaAs monolithic microwave integrated circuit (MMIC) processes. During operation, the device consumes no DC power and shows less than −24.2 dB reflection loss up to 25 GHz, due to the fully passive and simple impedance structure. The dynamic range of 42 dB is obtained without sacrificing linearity, due to the robust load and parallel thermocouple design. Experiments also show that the thermoelectric sensor itself can detect 500 mW of RF power. [2023-0134]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 1","pages":"9-11"},"PeriodicalIF":2.7,"publicationDate":"2023-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139676180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-16DOI: 10.1109/JMEMS.2023.3331701
Mohammad Kazemi;Seyedfakhreddin Nabavi;Mathieu Gratuze;Frederic Nabki
The utilization of MEMS resonators in microelectronics has garnered significant attention, given their crucial role in a multitude of applications, including timing and sensing. Among the various types of resonators, tunable resonators are particularly noteworthy, as they possess the capability of dynamically adjusting their resonant frequency. Accordingly, this work presents an innovative method for tuning the resonant frequency of beam resonators that are resonating out-of-plane by using a pair of electrostatic actuators. The proposed mechanism focuses on increasing the stiffness of the anchoring structure, which ultimately results in a significant increase in the resonant frequency of the beam resonator. This approach relies on the use of electrostatic actuators which are positioned in close proximity to the anchors and are pulled into the device from a distance of $mathrm {2 ~mu text {m} }$ . The method is investigated using finite element simulation and measurement results from fabricated devices. The results indicate significant frequency tuning that reaches 27% and 51% of the initial resonant frequency by activation of one and both electrostatic actuators, respectively. [2023-0095]
鉴于微机电系统谐振器在计时和传感等众多应用中的关键作用，在微电子学中使用微机电系统谐振器已引起广泛关注。在各种类型的谐振器中，可调谐谐振器尤其值得关注，因为它们具有动态调节谐振频率的能力。因此，本研究提出了一种创新方法，利用一对静电致动器来调整平面外共振的梁谐振器的共振频率。所提出的机制主要是增加锚定结构的刚度，最终显著提高梁谐振器的谐振频率。这种方法依赖于静电致动器的使用，静电致动器的位置靠近锚点，并从$mathrm {2 ~mu text {m} 的距离被拉入装置中。}$ .我们使用有限元模拟和制造设备的测量结果对该方法进行了研究。结果表明，通过激活一个和两个静电致动器，频率调整效果明显，分别达到初始谐振频率的 27% 和 51%。[2023-0095]
{"title":"Frequency Selection in a MEMS Flexural Beam Resonator by Electrostatic Actuation","authors":"Mohammad Kazemi;Seyedfakhreddin Nabavi;Mathieu Gratuze;Frederic Nabki","doi":"10.1109/JMEMS.2023.3331701","DOIUrl":"https://doi.org/10.1109/JMEMS.2023.3331701","url":null,"abstract":"The utilization of MEMS resonators in microelectronics has garnered significant attention, given their crucial role in a multitude of applications, including timing and sensing. Among the various types of resonators, tunable resonators are particularly noteworthy, as they possess the capability of dynamically adjusting their resonant frequency. Accordingly, this work presents an innovative method for tuning the resonant frequency of beam resonators that are resonating out-of-plane by using a pair of electrostatic actuators. The proposed mechanism focuses on increasing the stiffness of the anchoring structure, which ultimately results in a significant increase in the resonant frequency of the beam resonator. This approach relies on the use of electrostatic actuators which are positioned in close proximity to the anchors and are pulled into the device from a distance of \u0000<inline-formula> <tex-math>$mathrm {2 ~mu text {m} }$ </tex-math></inline-formula>\u0000. The method is investigated using finite element simulation and measurement results from fabricated devices. The results indicate significant frequency tuning that reaches 27% and 51% of the initial resonant frequency by activation of one and both electrostatic actuators, respectively. [2023-0095]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 1","pages":"66-77"},"PeriodicalIF":2.7,"publicationDate":"2023-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10319990","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139676287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-03DOI: 10.1109/JMEMS.2023.3326973
Wei-Yang Weng;Jun-Chau Chien
This paper describes a novel CMOS-embedded microfluidics platform featuring on-chip impedance-sensing electrodes. The platform employs a single-step wet etching process, removing the CMOS back-end-of-line (BEOL) routing metals, to create hollow fluidic channels that can be closely integrated with active circuits. We optimize the process parameters and improve the etch rate by 10Í through screening different metal etchants and applying hydraulic pressure to enhance the etchant byproduct diffusion rates. To integrate on-chip electrodes for impedance sensing, we explore various strategies and present “via” electrodes that maintain their integrity in the etching process while preserving detection sensitivity. We also investigate the long-term reliability of the platform. Finally, we demonstrate the efficacy of impedance sensing using ionic solutions of varying strengths. [2023-0119]
{"title":"Impedance Sensing in CMOS-Embedded Microfluidics Using BEOL Electrodes","authors":"Wei-Yang Weng;Jun-Chau Chien","doi":"10.1109/JMEMS.2023.3326973","DOIUrl":"10.1109/JMEMS.2023.3326973","url":null,"abstract":"This paper describes a novel CMOS-embedded microfluidics platform featuring on-chip impedance-sensing electrodes. The platform employs a single-step wet etching process, removing the CMOS back-end-of-line (BEOL) routing metals, to create hollow fluidic channels that can be closely integrated with active circuits. We optimize the process parameters and improve the etch rate by 10Í through screening different metal etchants and applying hydraulic pressure to enhance the etchant byproduct diffusion rates. To integrate on-chip electrodes for impedance sensing, we explore various strategies and present “via” electrodes that maintain their integrity in the etching process while preserving detection sensitivity. We also investigate the long-term reliability of the platform. Finally, we demonstrate the efficacy of impedance sensing using ionic solutions of varying strengths. [2023-0119]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 1","pages":"110-117"},"PeriodicalIF":2.7,"publicationDate":"2023-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134981997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-24DOI: 10.1109/JMEMS.2023.3323954
Zekai Wang;Wenjuan Liu;Bohao Hu;Yuhao Xiao;Chaoxiang Yang;Liangyu Lu;Yao Cai;Yan Liu;Chengliang Sun
Applying a DC bias can effectively tune the performance of a piezoelectric ultrasonic micromachined transducer (PMUT) to meet the requirements in multiple application scenarios. However, the effect of DC bias on various parameters of PMUT has not been systematically analyzed and verified. In this work, a theoretical model of scandium-doped aluminum nitride (ScAlN) based PMUT under different DC biases is obtained by extracting new effective coefficients and coupling the DC bias into the vibration functions. The measurement results show that the resonant frequency, center displacement, −3-dB bandwidth, and electromechanical coupling coefficient of ScAlN-based PMUT all change linearly when the DC bias is swept from −90-V to 90-V. Moreover, the sensitivity of resonant frequency is 185-Hz/V, and the effective frequency range is 32.81-kHz. The electromechanical coupling coefficient increased more than 14.18 % at 40-V compared to −40-V. The theoretical model is verified with the experimental measurement and indicates that the performance of ScAlN-based PMUT is tunable through DC bias, which has considerable application potential in application scenarios such as data communication, photoacoustic imaging, pulse-echo positioning, and phased array. [2023-0111]
{"title":"Theoretical Analysis and Verification on ScAlN-Based Piezoelectric Micromachined Ultrasonic Transducers With DC Bias","authors":"Zekai Wang;Wenjuan Liu;Bohao Hu;Yuhao Xiao;Chaoxiang Yang;Liangyu Lu;Yao Cai;Yan Liu;Chengliang Sun","doi":"10.1109/JMEMS.2023.3323954","DOIUrl":"10.1109/JMEMS.2023.3323954","url":null,"abstract":"Applying a DC bias can effectively tune the performance of a piezoelectric ultrasonic micromachined transducer (PMUT) to meet the requirements in multiple application scenarios. However, the effect of DC bias on various parameters of PMUT has not been systematically analyzed and verified. In this work, a theoretical model of scandium-doped aluminum nitride (ScAlN) based PMUT under different DC biases is obtained by extracting new effective coefficients and coupling the DC bias into the vibration functions. The measurement results show that the resonant frequency, center displacement, −3-dB bandwidth, and electromechanical coupling coefficient of ScAlN-based PMUT all change linearly when the DC bias is swept from −90-V to 90-V. Moreover, the sensitivity of resonant frequency is 185-Hz/V, and the effective frequency range is 32.81-kHz. The electromechanical coupling coefficient increased more than 14.18 % at 40-V compared to −40-V. The theoretical model is verified with the experimental measurement and indicates that the performance of ScAlN-based PMUT is tunable through DC bias, which has considerable application potential in application scenarios such as data communication, photoacoustic imaging, pulse-echo positioning, and phased array. [2023-0111]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 1","pages":"54-65"},"PeriodicalIF":2.7,"publicationDate":"2023-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135156825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This letter presents a micropillar-pumped polymer loop heat pipe (LHP) with potential applications in flexible electronics. A unique evaporator with a micro pillar wick was designed for a flexible polymer LHP. The polymer LHP was fabricated via simple and cost-effective soft lithography, omitting the need for a porous wick. This design and fabrication approach facilitated passive two-phase cooling in the polymer LHP, with up to 34 °C reduction in evaporator temperature when compared to a non-fluid-charged state in a horizontal orientation. [2023-0140]
{"title":"Design and Fabrication of a Micropillar-Pumped Polymer Loop Heat Pipe","authors":"Masaaki Hashimoto;Taiga Kawakami;Abdulkareem Alasli;Ryobu Nomura;Hosei Nagano;Ai Ueno","doi":"10.1109/JMEMS.2023.3318413","DOIUrl":"10.1109/JMEMS.2023.3318413","url":null,"abstract":"This letter presents a micropillar-pumped polymer loop heat pipe (LHP) with potential applications in flexible electronics. A unique evaporator with a micro pillar wick was designed for a flexible polymer LHP. The polymer LHP was fabricated via simple and cost-effective soft lithography, omitting the need for a porous wick. This design and fabrication approach facilitated passive two-phase cooling in the polymer LHP, with up to 34 °C reduction in evaporator temperature when compared to a non-fluid-charged state in a horizontal orientation. [2023-0140]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"32 6","pages":"519-521"},"PeriodicalIF":2.7,"publicationDate":"2023-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10288587","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135056716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-20DOI: 10.1109/JMEMS.2023.3314666
Omar Barrera;Sinwoo Cho;Lezli Matto;Jack Kramer;Kenny Huynh;Vakhtang Chulukhadze;Yen-Wei Chang;Mark S. Goorsky;Ruochen Lu
This work reports an acoustic filter at 23.5 GHz with a low insertion loss (IL) of 2.38 dB and a 3-dB fractional bandwidth (FBW) of 18.2%, significantly surpassing the state-of-the-art. The device leverages electrically coupled acoustic resonators in 100 nm 128° Y-cut lithium niobate (LiNbO3) piezoelectric thin film, operating in the first-order antisymmetric (A1) mode. A new film stack, namely transferred thin-film LiNbO3 on silicon (Si) substrate with an intermediate amorphous silicon (a-Si) layer, facilitates the record-breaking performance at millimeter-wave (mmWave). The filter features a compact footprint of 0.56 mm2. In this letter, acoustic and EM consideration, along with material characterization with X-ray diffraction and verified with cross-sectional electron microscopy are reported. Upon further development, the reported filter platform can enable various front-end signal-processing functions at mmWave. [2023-0129]
{"title":"Thin-Film Lithium Niobate Acoustic Filter at 23.5 GHz With 2.38 dB IL and 18.2% FBW","authors":"Omar Barrera;Sinwoo Cho;Lezli Matto;Jack Kramer;Kenny Huynh;Vakhtang Chulukhadze;Yen-Wei Chang;Mark S. Goorsky;Ruochen Lu","doi":"10.1109/JMEMS.2023.3314666","DOIUrl":"10.1109/JMEMS.2023.3314666","url":null,"abstract":"This work reports an acoustic filter at 23.5 GHz with a low insertion loss (IL) of 2.38 dB and a 3-dB fractional bandwidth (FBW) of 18.2%, significantly surpassing the state-of-the-art. The device leverages electrically coupled acoustic resonators in 100 nm 128° Y-cut lithium niobate (LiNbO3) piezoelectric thin film, operating in the first-order antisymmetric (A1) mode. A new film stack, namely transferred thin-film LiNbO3 on silicon (Si) substrate with an intermediate amorphous silicon (a-Si) layer, facilitates the record-breaking performance at millimeter-wave (mmWave). The filter features a compact footprint of 0.56 mm2. In this letter, acoustic and EM consideration, along with material characterization with X-ray diffraction and verified with cross-sectional electron microscopy are reported. Upon further development, the reported filter platform can enable various front-end signal-processing functions at mmWave. [2023-0129]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"32 6","pages":"622-625"},"PeriodicalIF":2.7,"publicationDate":"2023-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10288383","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135056715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This work demonstrates a hybrid MEMS actuator platform that combines electrostatic and piezoelectric actuators to displace a suspended MEMS platform along 3 degrees-of-freedom (DOF). The prototype MEMS actuator tested produces maximum displacements of $8.8 mu text{m}$ along the positive X-axis, and $8.5 mu text{m}$ along the negative X-axis, with digital control. Analog control produces maximum displacements of $5.9 mu text{m}$ along the positive X-axis, and $5.8 mu text{m}$ along the negative X-axis. It can also provide $2.2 mu text{m}$ of in-plane displacement along the negative Y-axis with analog control. The electrostatic actuator used for displacement along the negative Y-axis also compensates for any out-of-plane misalignment between the suspended MEMS platform and fixed silicon due to the significant residual stress caused by deposited piezoelectric material layers. In addition, up to 550 nm of misalignment compensation using the electrostatic actuator before electrostatic pull-in is demonstrated. The piezoelectric actuator provides fine alignment capability with a maximum out-of-plane displacement of 200 nm and 100 nm with analog control along the positive and negative Z-axis, respectively. This hybrid MEMS actuator can be integrated with channel waveguides for efficient planar optical switching applications. [2023-0121]
这项工作展示了一个混合MEMS致动器平台，它结合了静电和压电致动器，沿3个自由度(DOF)取代悬浮的MEMS平台。测试的原型MEMS执行器在数字控制下，沿正x轴产生的最大位移为8.8 mu text{m}$，沿负x轴产生的最大位移为8.5 mu text{m}$。模拟控制沿正x轴产生$5.9 mu text{m}$的最大位移，沿负x轴产生$5.8 mu text{m}$的最大位移。它还可以提供$2.2 mu text{m}$沿负y轴的面内位移与模拟控制。用于沿负y轴位移的静电致动器还补偿了由于沉积的压电材料层引起的显著残余应力而导致的悬浮MEMS平台与固定硅之间的任何面外错位。此外，在静电拉入之前，使用静电致动器进行了高达550 nm的误差补偿。压电致动器提供了良好的对准能力，最大面外位移分别为200 nm和100 nm，沿正z轴和负z轴进行模拟控制。这种混合MEMS驱动器可以与通道波导集成，用于高效的平面光开关应用。(2023 - 0121)
{"title":"Hybrid MEMS Actuator With 3 Degrees-of- Freedom for Efficient Planar Optical Switching","authors":"Suraj Sharma;Seyedfakhreddin Nabavi;Almur Abdelkreem Saeed Rabih;Michaël Ménard;Frederic Nabki","doi":"10.1109/JMEMS.2023.3322223","DOIUrl":"10.1109/JMEMS.2023.3322223","url":null,"abstract":"This work demonstrates a hybrid MEMS actuator platform that combines electrostatic and piezoelectric actuators to displace a suspended MEMS platform along 3 degrees-of-freedom (DOF). The prototype MEMS actuator tested produces maximum displacements of \u0000<inline-formula> <tex-math>$8.8 mu text{m}$ </tex-math></inline-formula>\u0000 along the positive X-axis, and \u0000<inline-formula> <tex-math>$8.5 mu text{m}$ </tex-math></inline-formula>\u0000 along the negative X-axis, with digital control. Analog control produces maximum displacements of \u0000<inline-formula> <tex-math>$5.9 mu text{m}$ </tex-math></inline-formula>\u0000 along the positive X-axis, and \u0000<inline-formula> <tex-math>$5.8 mu text{m}$ </tex-math></inline-formula>\u0000 along the negative X-axis. It can also provide \u0000<inline-formula> <tex-math>$2.2 mu text{m}$ </tex-math></inline-formula>\u0000 of in-plane displacement along the negative Y-axis with analog control. The electrostatic actuator used for displacement along the negative Y-axis also compensates for any out-of-plane misalignment between the suspended MEMS platform and fixed silicon due to the significant residual stress caused by deposited piezoelectric material layers. In addition, up to 550 nm of misalignment compensation using the electrostatic actuator before electrostatic pull-in is demonstrated. The piezoelectric actuator provides fine alignment capability with a maximum out-of-plane displacement of 200 nm and 100 nm with analog control along the positive and negative Z-axis, respectively. This hybrid MEMS actuator can be integrated with channel waveguides for efficient planar optical switching applications. [2023-0121]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"32 6","pages":"593-603"},"PeriodicalIF":2.7,"publicationDate":"2023-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135056718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-20DOI: 10.1109/JMEMS.2023.3321284
Sinwoo Cho;Omar Barrera;Pietro Simeoni;Emily N. Marshall;Jack Kramer;Keisuke Motoki;Tzu-Hsuan Hsu;Vakhtang Chulukhadze;Matteo Rinaldi;W. Alan Doolittle;Ruochen Lu
This work reports a millimeter wave (mmWave) thin-film bulk acoustic resonator (FBAR) in sputtered scandium aluminum nitride (ScAlN). This paper identifies challenges of frequency scaling sputtered ScAlN into mmWave and proposes a stack and new fabrication procedure with a sputtered Sc0.3 Al0.7 N on Al on Si carrier wafer. The resonator achieves electromechanical coupling ( ${k} ^{2}$ ) of 7.0% and quality factor ( ${Q}$ ) of 62 for the first-order symmetric (S1) mode at 21.4 GHz, along with ${k} ^{2}$ of 4.0% and ${Q}$ of 19 for the third-order symmetric (S3) mode at 55.4 GHz, showing higher figures of merit (FoM, ${k} ^{2} cdot {Q}$ ) than reported AlN/ScAlN-based mmWave acoustic resonators. The ScAlN quality is identified by transmission electron microscopy (TEM) and X-ray diffraction (XRD), identifying the bottlenecks in the existing piezoelectric-metal stack. Further improvement of ScAlN/AlN-based mmWave acoustic resonators calls for better crystalline quality from improved thin-film deposition methods. [2023-0151]
{"title":"Millimeter Wave Thin-Film Bulk Acoustic Resonator in Sputtered Scandium Aluminum Nitride","authors":"Sinwoo Cho;Omar Barrera;Pietro Simeoni;Emily N. Marshall;Jack Kramer;Keisuke Motoki;Tzu-Hsuan Hsu;Vakhtang Chulukhadze;Matteo Rinaldi;W. Alan Doolittle;Ruochen Lu","doi":"10.1109/JMEMS.2023.3321284","DOIUrl":"10.1109/JMEMS.2023.3321284","url":null,"abstract":"This work reports a millimeter wave (mmWave) thin-film bulk acoustic resonator (FBAR) in sputtered scandium aluminum nitride (ScAlN). This paper identifies challenges of frequency scaling sputtered ScAlN into mmWave and proposes a stack and new fabrication procedure with a sputtered Sc0.3 Al0.7 N on Al on Si carrier wafer. The resonator achieves electromechanical coupling (\u0000<inline-formula> <tex-math>${k} ^{2}$ </tex-math></inline-formula>\u0000) of 7.0% and quality factor (\u0000<inline-formula> <tex-math>${Q}$ </tex-math></inline-formula>\u0000) of 62 for the first-order symmetric (S1) mode at 21.4 GHz, along with \u0000<inline-formula> <tex-math>${k} ^{2}$ </tex-math></inline-formula>\u0000 of 4.0% and \u0000<inline-formula> <tex-math>${Q}$ </tex-math></inline-formula>\u0000 of 19 for the third-order symmetric (S3) mode at 55.4 GHz, showing higher figures of merit (FoM, \u0000<inline-formula> <tex-math>${k} ^{2} cdot {Q}$ </tex-math></inline-formula>\u0000) than reported AlN/ScAlN-based mmWave acoustic resonators. The ScAlN quality is identified by transmission electron microscopy (TEM) and X-ray diffraction (XRD), identifying the bottlenecks in the existing piezoelectric-metal stack. Further improvement of ScAlN/AlN-based mmWave acoustic resonators calls for better crystalline quality from improved thin-film deposition methods. [2023-0151]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"32 6","pages":"529-532"},"PeriodicalIF":2.7,"publicationDate":"2023-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135057047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-12DOI: 10.1109/JMEMS.2023.3321715
Hexu Luo;Menglun Zhang;Yi Gong;Yuan Ning;Xuejiao Chen;Quanning Li;Wei Pang
Flexural mode MEMS resonators are ideal candidates for resonant microsensors. However, their high motional resistance in air restricts the performance of corresponding oscillators and consequently the sensor performance. In this work, we report a piezoelectric MEMS oscillator based on a flexural mode membrane resonator array for in-air resonant sensors. Array design and piezoelectric transduction of the membrane resonators facilitate a low motional resistance and a high power handling capability. At the resonator level, the electrode pattern is optimized to further reduce the motional resistance, and the nonlinearity of the resonator is analyzed to fully exploit its high power handling for oscillator design. At the oscillator level, transimpedance and Pierce circuits are designed, analyzed and characterized. Theoretical calculations well fit measured results, both for the white and 1/f2 phase noise of the transimpedance oscillator and for the Allan deviation below an integration time of 0.1 s of the Pierce oscillator. The Pierce oscillator achieves a phase noise of −119 dBc/Hz at a 1 kHz offset and a −151 dBc/Hz noise floor. The frequency resolution of the Pierce oscillator reaches 0.024 Hz. To the best of our knowledge, the measured phase noise and frequency resolution are the best among reported low-frequency piezoelectric MEMS oscillators for in-air resonant sensors. The proposed solution could be applied for a variety of sensing scenarios, such as mass, pressure, acceleration and strain sensing. A theoretical resolution as low as 15 $text{p}varepsilon $ is expected if it is utilized as a strain sensor. [2023-0128]
{"title":"A Low-Noise Piezoelectric MEMS Oscillator Based on a Flexural Mode Membrane Resonator Array Toward In-Air Resonant Sensors","authors":"Hexu Luo;Menglun Zhang;Yi Gong;Yuan Ning;Xuejiao Chen;Quanning Li;Wei Pang","doi":"10.1109/JMEMS.2023.3321715","DOIUrl":"10.1109/JMEMS.2023.3321715","url":null,"abstract":"Flexural mode MEMS resonators are ideal candidates for resonant microsensors. However, their high motional resistance in air restricts the performance of corresponding oscillators and consequently the sensor performance. In this work, we report a piezoelectric MEMS oscillator based on a flexural mode membrane resonator array for in-air resonant sensors. Array design and piezoelectric transduction of the membrane resonators facilitate a low motional resistance and a high power handling capability. At the resonator level, the electrode pattern is optimized to further reduce the motional resistance, and the nonlinearity of the resonator is analyzed to fully exploit its high power handling for oscillator design. At the oscillator level, transimpedance and Pierce circuits are designed, analyzed and characterized. Theoretical calculations well fit measured results, both for the white and 1/f2 phase noise of the transimpedance oscillator and for the Allan deviation below an integration time of 0.1 s of the Pierce oscillator. The Pierce oscillator achieves a phase noise of −119 dBc/Hz at a 1 kHz offset and a −151 dBc/Hz noise floor. The frequency resolution of the Pierce oscillator reaches 0.024 Hz. To the best of our knowledge, the measured phase noise and frequency resolution are the best among reported low-frequency piezoelectric MEMS oscillators for in-air resonant sensors. The proposed solution could be applied for a variety of sensing scenarios, such as mass, pressure, acceleration and strain sensing. A theoretical resolution as low as 15 \u0000<inline-formula> <tex-math>$text{p}varepsilon $ </tex-math></inline-formula>\u0000 is expected if it is utilized as a strain sensor. [2023-0128]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"32 6","pages":"533-541"},"PeriodicalIF":2.7,"publicationDate":"2023-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136303225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-12DOI: 10.1109/JMEMS.2023.3320198
Federico Maspero;Jacopo Maria De Ponti;Luca Iorio;Annachiara Esposito;Riccardo Bertacco;Andrea di Matteo;Alberto Corigliano;Raffaele Ardito
Inspired by recent graded metamaterials designs, we create phononic arrays of micro-resonators for frequency signal amplification and wave filtering. Leveraging suspended waveguides on a thick silicon substrate, we hybridize surface Rayleigh and Lamb flexural waves to effectively achieve phononic signal control along predefined channels. The guided waves are then spatially controlled using a suitable grading of the micro-resonators, which provide high signal-to-noise ratio and simultaneously create phononic delay-lines. The proposed device can be used for sensing, wave filtering or energy harvesting. [2023-0117]
{"title":"Phononic Graded Meta-MEMS for Elastic Wave Amplification and Filtering","authors":"Federico Maspero;Jacopo Maria De Ponti;Luca Iorio;Annachiara Esposito;Riccardo Bertacco;Andrea di Matteo;Alberto Corigliano;Raffaele Ardito","doi":"10.1109/JMEMS.2023.3320198","DOIUrl":"10.1109/JMEMS.2023.3320198","url":null,"abstract":"Inspired by recent graded metamaterials designs, we create phononic arrays of micro-resonators for frequency signal amplification and wave filtering. Leveraging suspended waveguides on a thick silicon substrate, we hybridize surface Rayleigh and Lamb flexural waves to effectively achieve phononic signal control along predefined channels. The guided waves are then spatially controlled using a suitable grading of the micro-resonators, which provide high signal-to-noise ratio and simultaneously create phononic delay-lines. The proposed device can be used for sensing, wave filtering or energy harvesting. [2023-0117]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"32 6","pages":"522-528"},"PeriodicalIF":2.7,"publicationDate":"2023-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10281378","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136302853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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