Pub Date : 2024-10-16DOI: 10.1109/JMEMS.2024.3463406
Vincent P. J. Chung;Xiaoliang Li;Metin G. Guney;Jeyanandh Paramesh;Tamal Mukherjee;Gary K. Fedder
This paper reports on the development of a monolithic capacitive accelerometer array system that has a designed full-scale range of $pm 5~{mathrm {text {k}{g} }}$ , a bandwidth larger than $10~{mathrm {text {k}text {Hz} }}$ , with a minimum resolution of $mathrm {5~text {m}{g} }$ and a minimum bias instability of $mathrm {700~mu {g} }$ . The resolution and full-scale range of the accelerometers correspond to a dynamic range of 120 dB that is on par with state-of-the-art low- $mathrm {{g} }$ accelerometers. High bandwidth and $mathrm {text {k}{g} }$ detectability are achieved by the nano-gram proof mass and relatively stiff folded-flexure transducer design. High dynamic range with $mathrm {text {k}{g} }$ input range is enabled by the hourglass-beam, interdigitated tapered comb-finger electrodes, and arrayed accelerometers. The accelerometer array design provides a potential path towards an emerging navigation through high-shock application.[2024-0091]
{"title":"Toward 120 dB CMOS-MEMS Arrayed Accelerometers Measuring Through kg Shock Events","authors":"Vincent P. J. Chung;Xiaoliang Li;Metin G. Guney;Jeyanandh Paramesh;Tamal Mukherjee;Gary K. Fedder","doi":"10.1109/JMEMS.2024.3463406","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3463406","url":null,"abstract":"This paper reports on the development of a monolithic capacitive accelerometer array system that has a designed full-scale range of \u0000<inline-formula> <tex-math>$pm 5~{mathrm {text {k}{g} }}$ </tex-math></inline-formula>\u0000, a bandwidth larger than \u0000<inline-formula> <tex-math>$10~{mathrm {text {k}text {Hz} }}$ </tex-math></inline-formula>\u0000, with a minimum resolution of \u0000<inline-formula> <tex-math>$mathrm {5~text {m}{g} }$ </tex-math></inline-formula>\u0000 and a minimum bias instability of \u0000<inline-formula> <tex-math>$mathrm {700~mu {g} }$ </tex-math></inline-formula>\u0000. The resolution and full-scale range of the accelerometers correspond to a dynamic range of 120 dB that is on par with state-of-the-art low-\u0000<inline-formula> <tex-math>$mathrm {{g} }$ </tex-math></inline-formula>\u0000 accelerometers. High bandwidth and \u0000<inline-formula> <tex-math>$mathrm {text {k}{g} }$ </tex-math></inline-formula>\u0000 detectability are achieved by the nano-gram proof mass and relatively stiff folded-flexure transducer design. High dynamic range with \u0000<inline-formula> <tex-math>$mathrm {text {k}{g} }$ </tex-math></inline-formula>\u0000 input range is enabled by the hourglass-beam, interdigitated tapered comb-finger electrodes, and arrayed accelerometers. The accelerometer array design provides a potential path towards an emerging navigation through high-shock application.[2024-0091]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 6","pages":"685-696"},"PeriodicalIF":2.5,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-15DOI: 10.1109/JMEMS.2024.3472286
Philipp Moll;Georg Pfusterschmied;Sabine Schwarz;Werner Artner;Ulrich Schmid
In this paper, we demonstrate the deposition of 3C-SiC thin films on SiO2 using the alternating supply deposition (ASD) technique in a low-pressure chemical vapor deposition (LPCVD) furnace. We provide data of the thin film properties showing strong dependencies on the process gas flow rates of silane, propane and hydrogen. For comparative reasons all gas flow compositions were performed on <100> silicon and SiO2. A decreased rate of growth per cycle of ~37 % was discovered on SiO2. X-ray photoelectron spectroscopy (XPS) depth profiling revealed an oxygen content of 7.5 % ±2.5 % throughout the entire thin film when grown on SiO2. High resolution transmission electron microscopy (HRTEM) showed a 15 nm amorphous carbon layer at the 3C-SiC/Si interface. Conversely, on SiO2 a 10 nm graphite layer was determined as intermediate layer leading to prominent $lt 111gt 3$ C-SiC X-ray diffraction (XRD) peaks. Independent of the substrate type a similar microstructure is observed in cross-sectional analyses. Atomic force microscopy (AFM) surface roughness measurements showed for all SiO2 thin films lower values with a minimum of 4.9 nm (RMS), compared to 7 nm on Si. The electrical film resistivity was determined on SiO2 with CTLM analysis, depending on the process gas composition. The gained knowledge is beneficial for MEMS applications, where tailored 3C-SiC-on-SiO2 structures are desired.[2024-0114]
{"title":"Polycrystalline LPCVD 3C-SiC Thin Films on SiO₂ Using Alternating Supply Deposition","authors":"Philipp Moll;Georg Pfusterschmied;Sabine Schwarz;Werner Artner;Ulrich Schmid","doi":"10.1109/JMEMS.2024.3472286","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3472286","url":null,"abstract":"In this paper, we demonstrate the deposition of 3C-SiC thin films on SiO2 using the alternating supply deposition (ASD) technique in a low-pressure chemical vapor deposition (LPCVD) furnace. We provide data of the thin film properties showing strong dependencies on the process gas flow rates of silane, propane and hydrogen. For comparative reasons all gas flow compositions were performed on <100> silicon and SiO2. A decreased rate of growth per cycle of ~37 % was discovered on SiO2. X-ray photoelectron spectroscopy (XPS) depth profiling revealed an oxygen content of 7.5 % ±2.5 % throughout the entire thin film when grown on SiO2. High resolution transmission electron microscopy (HRTEM) showed a 15 nm amorphous carbon layer at the 3C-SiC/Si interface. Conversely, on SiO2 a 10 nm graphite layer was determined as intermediate layer leading to prominent \u0000<inline-formula> <tex-math>$lt 111gt 3$ </tex-math></inline-formula>\u0000C-SiC X-ray diffraction (XRD) peaks. Independent of the substrate type a similar microstructure is observed in cross-sectional analyses. Atomic force microscopy (AFM) surface roughness measurements showed for all SiO2 thin films lower values with a minimum of 4.9 nm (RMS), compared to 7 nm on Si. The electrical film resistivity was determined on SiO2 with CTLM analysis, depending on the process gas composition. The gained knowledge is beneficial for MEMS applications, where tailored 3C-SiC-on-SiO2 structures are desired.[2024-0114]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 6","pages":"767-775"},"PeriodicalIF":2.5,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10718720","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-15DOI: 10.1109/JMEMS.2024.3472615
Omar Barrera;Nishanth Ravi;Kapil Saha;Supratik Dasgupta;Joshua Campbell;Jack Kramer;Eugene Kwon;Tzu-Hsuan Hsu;Sinwoo Cho;Ian Anderson;Pietro Simeoni;Jue Hou;Matteo Rinaldi;Mark S. Goorsky;Ruochen Lu
This work reports an acoustic solidly mounted resonator (SMR) at 18.64 GHz, among the highest operating frequencies reported. The device is built in scandium aluminum nitride (ScAlN) on top of silicon dioxide (SiO2) and tantalum pentoxide (Ta2O5) Bragg reflectors on silicon (Si) wafer. The stack is analyzed with X-ray reflectivity (XRR) and high-resolution X-ray diffraction (HRXRD). The resonator shows a coupling coefficient ( $k^{2}$ ) of 2.0%, high series quality factor ( $Q_{s}$ ) of 156, shunt quality factor ( $Q_{p}$ ) of 142, and maximum Bode quality factor ( $Q_{max}$ ) of 210. The third-order harmonics at 59.64 GHz is also observed with $k^{2}$ around 0.6% and Q around 40. Upon further development, the reported acoustic resonator platform can enable various front-end signal-processing functions, e.g., filters and oscillators, at future frequency range 3 (FR3) bands.[2024-0120]
{"title":"18 GHz Solidly Mounted Resonator in Scandium Aluminum Nitride on SiO₂/Ta₂O₅ Bragg Reflector","authors":"Omar Barrera;Nishanth Ravi;Kapil Saha;Supratik Dasgupta;Joshua Campbell;Jack Kramer;Eugene Kwon;Tzu-Hsuan Hsu;Sinwoo Cho;Ian Anderson;Pietro Simeoni;Jue Hou;Matteo Rinaldi;Mark S. Goorsky;Ruochen Lu","doi":"10.1109/JMEMS.2024.3472615","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3472615","url":null,"abstract":"This work reports an acoustic solidly mounted resonator (SMR) at 18.64 GHz, among the highest operating frequencies reported. The device is built in scandium aluminum nitride (ScAlN) on top of silicon dioxide (SiO2) and tantalum pentoxide (Ta2O5) Bragg reflectors on silicon (Si) wafer. The stack is analyzed with X-ray reflectivity (XRR) and high-resolution X-ray diffraction (HRXRD). The resonator shows a coupling coefficient (\u0000<inline-formula> <tex-math>$k^{2}$ </tex-math></inline-formula>\u0000) of 2.0%, high series quality factor (\u0000<inline-formula> <tex-math>$Q_{s}$ </tex-math></inline-formula>\u0000) of 156, shunt quality factor (\u0000<inline-formula> <tex-math>$Q_{p}$ </tex-math></inline-formula>\u0000) of 142, and maximum Bode quality factor (\u0000<inline-formula> <tex-math>$Q_{max}$ </tex-math></inline-formula>\u0000) of 210. The third-order harmonics at 59.64 GHz is also observed with \u0000<inline-formula> <tex-math>$k^{2}$ </tex-math></inline-formula>\u0000 around 0.6% and Q around 40. Upon further development, the reported acoustic resonator platform can enable various front-end signal-processing functions, e.g., filters and oscillators, at future frequency range 3 (FR3) bands.[2024-0120]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 6","pages":"711-716"},"PeriodicalIF":2.5,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-11DOI: 10.1109/JMEMS.2024.3469192
Guorong Wu;Xiaokang Chen
In this paper, the etching evolution law and surface morphology characteristics of sapphire hemispheres under different etchant concentration conditions are analyzed comprehensively in the light of the atomic structure and etching rates of sapphire. Firstly, etching rate distributions of the sapphire hemispheres at various concentration conditions (volume ratios of H2SO4 and H3PO4 are 1/1, 3/1 and 6/1) with the C-plane as the rotation center is obtained through etching experiments of sapphire hemispherical specimens, and etching evolutions of hemispheres are simulated and analyzed by applying the Level-Set method. It helps to design the etching time of the hemisphere reasonably. Then, the influence of etchant concentrations on the etching of hemispheres is analyzed on the basis of the characteristics of the etching rate distributions under different concentration conditions. Finally, the formation and the characteristic variability of hemispherical etching morphologies at various concentration conditions are analyzed in the light of the etching rates of planes and their atomic structures. It helps to improve the etching process of sapphire and the processing quality of etched structures of sapphire.[2024-0139]
{"title":"Etching Evolutions and Surface Morphologies of Sapphire Hemispheres Under Different Etchant Concentration Conditions","authors":"Guorong Wu;Xiaokang Chen","doi":"10.1109/JMEMS.2024.3469192","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3469192","url":null,"abstract":"In this paper, the etching evolution law and surface morphology characteristics of sapphire hemispheres under different etchant concentration conditions are analyzed comprehensively in the light of the atomic structure and etching rates of sapphire. Firstly, etching rate distributions of the sapphire hemispheres at various concentration conditions (volume ratios of H2SO4 and H3PO4 are 1/1, 3/1 and 6/1) with the C-plane as the rotation center is obtained through etching experiments of sapphire hemispherical specimens, and etching evolutions of hemispheres are simulated and analyzed by applying the Level-Set method. It helps to design the etching time of the hemisphere reasonably. Then, the influence of etchant concentrations on the etching of hemispheres is analyzed on the basis of the characteristics of the etching rate distributions under different concentration conditions. Finally, the formation and the characteristic variability of hemispherical etching morphologies at various concentration conditions are analyzed in the light of the etching rates of planes and their atomic structures. It helps to improve the etching process of sapphire and the processing quality of etched structures of sapphire.[2024-0139]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 6","pages":"785-792"},"PeriodicalIF":2.5,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper presents an analytical solution for the nonlinear dynamics of electrostatically driven MEMS scanning mirrors. These mirrors are widely used due to their small size, low cost, and low power consumption. However, nonlinearities in MEMS mirror’s amplitude-frequency response complicate control and design. Traditional numerical methods are time-consuming. This study uses a nonlinear approximation method and the averaging method to derive analytical solutions, improving design efficiency. Simulations and experiments validate these solutions, demonstrating good agreement for large amplitudes. The paper elucidates the origins of nonlinear phenomena such as threshold voltage, hysteresis in frequency response, and frequency shifts. An expression for the maximum vibration amplitude is derived, providing valuable insights for optimizing MEMS scanning mirrors. These findings provide a theoretical foundation for enhancing amplitude control, expediting the design process, and improving the performance of MEMS scanning mirrors.[2024-0128]
{"title":"Analytical Solution of Nonlinear Dynamics in Electrostatically Driven MEMS Scanning Mirrors","authors":"Changfeng Xia;Dayong Qiao;Anjie Peng;Zhen Chen;Xudong Song;Xiumin Song;Pengwen Xiong","doi":"10.1109/JMEMS.2024.3469274","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3469274","url":null,"abstract":"This paper presents an analytical solution for the nonlinear dynamics of electrostatically driven MEMS scanning mirrors. These mirrors are widely used due to their small size, low cost, and low power consumption. However, nonlinearities in MEMS mirror’s amplitude-frequency response complicate control and design. Traditional numerical methods are time-consuming. This study uses a nonlinear approximation method and the averaging method to derive analytical solutions, improving design efficiency. Simulations and experiments validate these solutions, demonstrating good agreement for large amplitudes. The paper elucidates the origins of nonlinear phenomena such as threshold voltage, hysteresis in frequency response, and frequency shifts. An expression for the maximum vibration amplitude is derived, providing valuable insights for optimizing MEMS scanning mirrors. These findings provide a theoretical foundation for enhancing amplitude control, expediting the design process, and improving the performance of MEMS scanning mirrors.[2024-0128]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 6","pages":"697-710"},"PeriodicalIF":2.5,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study presents recent advances in high-aspect-ratio Deep Reactive Ion Etching (DRIE) of bulk 4H-SiC and thick 4H-SiC on Insulator (SiCOI) substrates at the wafer level. Utilizing an electroplated nickel mask, we successfully achieved high aspect ratios ranging from 10:1 to 18:1 in deep trenches with critical dimensions in the range of 1- $10~mu $ m on the wafer. Trenches having an opening of $sim ~4~mu $ m were etched to greater than the target depth of $45~mu $ m, with a tapering angle of 88.5° and smooth sidewalls (roughness <200nm),> $pm 0.85~mu $ m) across the wafer. These results facilitated batch fabrication of capacitive 4H-SiC bulk acoustic wave disk resonators with high quality factor (Q) approaching 5 million at 3MHz. These achievements in high-aspect-ratio DRIE of 4H-SiC at the wafer level mark a significant stride towards enabling volume manufacturing of ultra-high Q SiC microresonators.[2024-0119]
{"title":"Advances in High-Aspect-Ratio Deep Reactive Ion Etching of 4H-Silicon Carbide Wafers","authors":"Ningxin Li;Zhenming Liu;Ardalan Lotfi;Xinyu Jiang;Emma Long;Shubham S. Sahasrabudhe;Chris Bolton;Huma Ashraf;Farrokh Ayazi","doi":"10.1109/JMEMS.2024.3466769","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3466769","url":null,"abstract":"This study presents recent advances in high-aspect-ratio Deep Reactive Ion Etching (DRIE) of bulk 4H-SiC and thick 4H-SiC on Insulator (SiCOI) substrates at the wafer level. Utilizing an electroplated nickel mask, we successfully achieved high aspect ratios ranging from 10:1 to 18:1 in deep trenches with critical dimensions in the range of 1-\u0000<inline-formula> <tex-math>$10~mu $ </tex-math></inline-formula>\u0000m on the wafer. Trenches having an opening of \u0000<inline-formula> <tex-math>$sim ~4~mu $ </tex-math></inline-formula>\u0000m were etched to greater than the target depth of \u0000<inline-formula> <tex-math>$45~mu $ </tex-math></inline-formula>\u0000m, with a tapering angle of 88.5° and smooth sidewalls (roughness <200nm),> <tex-math>$pm 0.85~mu $ </tex-math></inline-formula>\u0000m) across the wafer. These results facilitated batch fabrication of capacitive 4H-SiC bulk acoustic wave disk resonators with high quality factor (Q) approaching 5 million at 3MHz. These achievements in high-aspect-ratio DRIE of 4H-SiC at the wafer level mark a significant stride towards enabling volume manufacturing of ultra-high Q SiC microresonators.[2024-0119]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 6","pages":"776-784"},"PeriodicalIF":2.5,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
System-level simulation with macromodel is an important way to help MEMS design and optimization. The applications of traditional MEMS macromodels are confronted with the challenge of incorporating a substantial number of parameters into the macromodel and reconstructing the macromodel when new parameters should be added into the model. To solve the above problem, we propose a novel method for parameterizing macromodels based on modularizing parameters. Firstly, a basic macromodel of a MEMS device with constant hypothetical parameters is constructed. Subsequently, two ways are used to modularize the parameters. The first one is that artificial neural networks (ANNs) are adopted to construct the relationship between non-intuitive parameters with fuzzy behavior and basic macromodel to acquire abstract equations. Another is that the behavioral models of parameters are directly constructed based on behavioral equations for intuitive parameters with clear behavior. Subsequently, a way to implement ANN models by using Verilog-A is also given. Finally, the basic macromodel is assembled with various parameters to obtain the parameterized macromodel of the MEMS device. The highlights of this method are manifested in two aspects. First, ANNs based on data-driven can be applied to various types of parameters, so it has good universality. Second, during the parameterization process, there is no need to reconstruct the basic macromodel. MEMS thermal wind sensor is used to demonstrate the proposed method. The accurate results indicate that this method can provide accurately parameterized macromodels for system-level simulation and has the potential to efficiently support the optimization design of MEMS.[2024-0133]
{"title":"A Novel Parametric System-Level Modeling Method for MEMS Devices Combining Artificial Neural Networks and Behavior Description","authors":"Hao Xu;Lin-Feng Zhao;Zai-Fa Zhou;Zhen-Xiang Yi;Ming Qin;Qing-An Huang","doi":"10.1109/JMEMS.2024.3467126","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3467126","url":null,"abstract":"System-level simulation with macromodel is an important way to help MEMS design and optimization. The applications of traditional MEMS macromodels are confronted with the challenge of incorporating a substantial number of parameters into the macromodel and reconstructing the macromodel when new parameters should be added into the model. To solve the above problem, we propose a novel method for parameterizing macromodels based on modularizing parameters. Firstly, a basic macromodel of a MEMS device with constant hypothetical parameters is constructed. Subsequently, two ways are used to modularize the parameters. The first one is that artificial neural networks (ANNs) are adopted to construct the relationship between non-intuitive parameters with fuzzy behavior and basic macromodel to acquire abstract equations. Another is that the behavioral models of parameters are directly constructed based on behavioral equations for intuitive parameters with clear behavior. Subsequently, a way to implement ANN models by using Verilog-A is also given. Finally, the basic macromodel is assembled with various parameters to obtain the parameterized macromodel of the MEMS device. The highlights of this method are manifested in two aspects. First, ANNs based on data-driven can be applied to various types of parameters, so it has good universality. Second, during the parameterization process, there is no need to reconstruct the basic macromodel. MEMS thermal wind sensor is used to demonstrate the proposed method. The accurate results indicate that this method can provide accurately parameterized macromodels for system-level simulation and has the potential to efficiently support the optimization design of MEMS.[2024-0133]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 6","pages":"717-728"},"PeriodicalIF":2.5,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-04DOI: 10.1109/JMEMS.2024.3465507
Vishnu Kumar;Sudhanshu Tiwari;Gayathri Pillai;Rudra Pratap;Saurabh A. Chandorkar
Piezoelectric microelectromechanical systems have significant market potential owing to their superior capabilities of transduction to those of standard capacitive and piezoresistive devices. However, piezoelectric films are often lossy, which reduces the Quality Factor of devices and affects their performance. It is thus important to examine all sources of energy dissipation in such devices and accurately determine them based on experimental data. Currently used methods to quantify energy dissipation from different sources and the properties of materials based on experimental data are set-up for piezoelectric devices, in which energy storage and dissipation primarily occur in the same piezoelectric material. Moreover, such methods rely on resonance-antiresonance measurements, and thus are unsuitable for thin-film-piezoelectric-on-substrate (TPoS) Micro/Nano devices that have i) a significant portion of energy stored in the substrate/device layer, ii) a low signal-to-noise ratio owing to either lossy piezoelectric films or high motional impedance, or iii) a larger feedthrough capacitance, arising primarily from collocated electrodes, in addition to the internal capacitance of the piezoelectric film. In this paper, we propose a method that overcomes these challenges based on synchronized optical and electrical measurements. We develop a comprehensive physics-based model to extract all the relevant parameters for the device, including the coefficient of piezoelectric coupling, internal and feedthrough capacitance, loss tangents (dielectric, piezoelectric, and mechanical), and the contributions of different sources to the Quality Factor of the device. We showcase the proposed method by using a PZT-based TPoS MEMS cantilever and a Piezoelectric Micromachined Ultrasonic Transducers (PMUT).[2024-0063]
{"title":"Synchronized Opto-Electro-Mechanical Measurements for Estimation of Energy Dissipation in Thin-Film-Piezoelectricon-Substrate MEMS/NEMS Devices","authors":"Vishnu Kumar;Sudhanshu Tiwari;Gayathri Pillai;Rudra Pratap;Saurabh A. Chandorkar","doi":"10.1109/JMEMS.2024.3465507","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3465507","url":null,"abstract":"Piezoelectric microelectromechanical systems have significant market potential owing to their superior capabilities of transduction to those of standard capacitive and piezoresistive devices. However, piezoelectric films are often lossy, which reduces the Quality Factor of devices and affects their performance. It is thus important to examine all sources of energy dissipation in such devices and accurately determine them based on experimental data. Currently used methods to quantify energy dissipation from different sources and the properties of materials based on experimental data are set-up for piezoelectric devices, in which energy storage and dissipation primarily occur in the same piezoelectric material. Moreover, such methods rely on resonance-antiresonance measurements, and thus are unsuitable for thin-film-piezoelectric-on-substrate (TPoS) Micro/Nano devices that have i) a significant portion of energy stored in the substrate/device layer, ii) a low signal-to-noise ratio owing to either lossy piezoelectric films or high motional impedance, or iii) a larger feedthrough capacitance, arising primarily from collocated electrodes, in addition to the internal capacitance of the piezoelectric film. In this paper, we propose a method that overcomes these challenges based on synchronized optical and electrical measurements. We develop a comprehensive physics-based model to extract all the relevant parameters for the device, including the coefficient of piezoelectric coupling, internal and feedthrough capacitance, loss tangents (dielectric, piezoelectric, and mechanical), and the contributions of different sources to the Quality Factor of the device. We showcase the proposed method by using a PZT-based TPoS MEMS cantilever and a Piezoelectric Micromachined Ultrasonic Transducers (PMUT).[2024-0063]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 6","pages":"793-805"},"PeriodicalIF":2.5,"publicationDate":"2024-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-02DOI: 10.1109/JMEMS.2024.3454944
{"title":"Journal of Microelectromechanical Systems Publication Information","authors":"","doi":"10.1109/JMEMS.2024.3454944","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3454944","url":null,"abstract":"","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 5","pages":"C2-C2"},"PeriodicalIF":2.5,"publicationDate":"2024-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10703206","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142368335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-02DOI: 10.1109/JMEMS.2024.3455088
{"title":"TechRxiv: Share Your Preprint Research with the World!","authors":"","doi":"10.1109/JMEMS.2024.3455088","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3455088","url":null,"abstract":"","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 5","pages":"656-656"},"PeriodicalIF":2.5,"publicationDate":"2024-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10703205","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142368501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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