Pub Date : 2025-08-07DOI: 10.1109/JMEMS.2025.3593384
A. Fahad Malik;Mahmut Bicer;Krishna C. Balram
Phononic integrated circuits, which manipulate GHz-frequency acoustic fields in $mathrm {~ {mu }text {m}}$ -scale waveguides, provide new degrees of freedom for routing and manipulation of microwaves in deeply sub-wavelength geometries with associated implications for chipscale sensing and signal processing. The combination of low propagation loss, long interaction lengths and slow speed of sound put together with the large measurement bandwidths and high frequency resolution available from modern vector network analyzers (VNA) makes it feasible to visualize the temporal dynamics of propagating acoustic fields in these devices and see the device in action. Two representative examples we discuss here are pulse circulation and ringdown in an acoustic microring resonator, and the observation of (parasitic) multipath interference effects in waveguide resonator geometries. In the absence of fast 3D acoustic field imaging modalities, such time domain reflectometry based methods provide a viable alternative for mapping interface reflection and loss, which becomes increasingly critical as these devices start to scale in complexity.
{"title":"Temporal Dynamics of GHz Acoustic Waves in Chipscale Phononic Integrated Circuits","authors":"A. Fahad Malik;Mahmut Bicer;Krishna C. Balram","doi":"10.1109/JMEMS.2025.3593384","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3593384","url":null,"abstract":"Phononic integrated circuits, which manipulate GHz-frequency acoustic fields in <inline-formula> <tex-math>$mathrm {~ {mu }text {m}}$ </tex-math></inline-formula>-scale waveguides, provide new degrees of freedom for routing and manipulation of microwaves in deeply sub-wavelength geometries with associated implications for chipscale sensing and signal processing. The combination of low propagation loss, long interaction lengths and slow speed of sound put together with the large measurement bandwidths and high frequency resolution available from modern vector network analyzers (VNA) makes it feasible to visualize the temporal dynamics of propagating acoustic fields in these devices and <italic>see the device in action</i>. Two representative examples we discuss here are pulse circulation and ringdown in an acoustic microring resonator, and the observation of (parasitic) multipath interference effects in waveguide resonator geometries. In the absence of fast 3D acoustic field imaging modalities, such time domain reflectometry based methods provide a viable alternative for mapping interface reflection and loss, which becomes increasingly critical as these devices start to scale in complexity.","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 5","pages":"653-662"},"PeriodicalIF":3.1,"publicationDate":"2025-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145204578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-05DOI: 10.1109/JMEMS.2025.3589654
Feng Zhu;Mengxue Li;Xuezhong Wu;Jiangkun Sun;Kun Lu;Dingbang Xiao;Yan Shi;Xiang Xi
Micro hemispherical resonator gyroscopes (mHRG) offer significant advantages such as high precision and good reliability in inertial measurement applications. Thin-film damping of the resonators is a key factor limiting the performance improvement of mHRG. In this paper, we present a 3D mask-based metallization process that achieves ultra-thin 7 nm metallization on resonators through precise thickness distribution control. This method comprehensively analyzes the film thickness distribution and the energy distribution of the resonator, and reduces the film damping by regulating the film thickness distribution on the inner surface of the resonator through a mask. Our results show that this method reduces the film thickness from 13 nm to 7 nm (46.5% reduction) while maintaining the electrical conductivity and improving the Q-factor by 8.4 percentage points. The measured highest Q-factor of the 7 nm thin-film micro hemispherical resonator is 4.19 million, with an average Q-loss rate of 32.2%. Experimental validation confirms that the 7 nm Pt film not only meets the low resistance ($le 500~Omega $ ) requirement, but also reduces the energy dissipation of the resonator by minimizing thermoelastic damping and internal friction. This approach provides an efficient film thickness modulation strategy for mHRG. [2025-0079]
微半球谐振陀螺仪在惯性测量中具有精度高、可靠性好等显著优点。谐振腔的薄膜阻尼是制约mHRG性能提高的关键因素。在本文中，我们提出了一种基于3D掩模的金属化工艺，通过精确的厚度分布控制，在谐振器上实现了超薄的7纳米金属化。该方法综合分析了谐振器的膜厚分布和能量分布，通过掩模调节谐振器内表面的膜厚分布，降低了膜阻尼。结果表明，该方法将薄膜厚度从13 nm减小到7 nm (46.5% reduction) while maintaining the electrical conductivity and improving the Q-factor by 8.4 percentage points. The measured highest Q-factor of the 7 nm thin-film micro hemispherical resonator is 4.19 million, with an average Q-loss rate of 32.2%. Experimental validation confirms that the 7 nm Pt film not only meets the low resistance ( $le 500~Omega $ ) requirement, but also reduces the energy dissipation of the resonator by minimizing thermoelastic damping and internal friction. This approach provides an efficient film thickness modulation strategy for mHRG. [2025-0079]
{"title":"Q-Factor Enhancement of Micro Hemispherical Resonators via Optimization of Film Distribution","authors":"Feng Zhu;Mengxue Li;Xuezhong Wu;Jiangkun Sun;Kun Lu;Dingbang Xiao;Yan Shi;Xiang Xi","doi":"10.1109/JMEMS.2025.3589654","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3589654","url":null,"abstract":"Micro hemispherical resonator gyroscopes (mHRG) offer significant advantages such as high precision and good reliability in inertial measurement applications. Thin-film damping of the resonators is a key factor limiting the performance improvement of mHRG. In this paper, we present a 3D mask-based metallization process that achieves ultra-thin 7 nm metallization on resonators through precise thickness distribution control. This method comprehensively analyzes the film thickness distribution and the energy distribution of the resonator, and reduces the film damping by regulating the film thickness distribution on the inner surface of the resonator through a mask. Our results show that this method reduces the film thickness from 13 nm to 7 nm (46.5% reduction) while maintaining the electrical conductivity and improving the Q-factor by 8.4 percentage points. The measured highest Q-factor of the 7 nm thin-film micro hemispherical resonator is 4.19 million, with an average Q-loss rate of 32.2%. Experimental validation confirms that the 7 nm Pt film not only meets the low resistance (<inline-formula> <tex-math>$le 500~Omega $ </tex-math></inline-formula>) requirement, but also reduces the energy dissipation of the resonator by minimizing thermoelastic damping and internal friction. This approach provides an efficient film thickness modulation strategy for mHRG. [2025-0079]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 5","pages":"548-556"},"PeriodicalIF":3.1,"publicationDate":"2025-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145204572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bulk acoustic wave (BAW) filters are crucial components in communications systems. Ladder and lattice types are two basic filter topologies used in unbalanced and balanced systems, respectively. Compared to ladder filters, lattice filters have advantages of larger bandwidth and better trade-off between out-of-band rejection and roll-off. However, the current lattice filters are restricted by their incompatible balanced terminals with other radio frequency devices. In this work, a hybrid integration of integrated passive device (IPD) and lattice-type bulk acoustic wave (BAW) filter with unbalanced terminals was proposed. The IPD network achieved phase flip and transformed the balanced terminal into unbalanced terminal of the lattice-type BAW filter. To realize a more compact integration of the BAW device and phase-flip network, for the first time we achieved Si microcap capacitor structure, which can also be adopted for 3D integration of other acoustic and electromagnetic devices. The fabricated filter achieved a minimum insertion loss of 1.39 dB and a 3-dB bandwidth of 145 MHz, a relative bandwidth fraction of 7.2%. Compared with the ladder type filter with same resonator number, the phase-flip lattice filter achieved ~30% improvement in bandwidth. This work brings new methodology for the topology designs of lattice filters and compact integration of capacitors and inductors with BAW devices. [2025-0086]
{"title":"Phase-Flip Lattice Bulk Acoustic Wave Filter With Unbalanced Terminals Using Hybrid Heterogeneous Integration Technology","authors":"Rui Ding;Weipeng Xuan;Feng Gao;Danyu Mu;Tengbo Cao;Chengzhi Wang;Wei Wang;Yinpei Chen;Wenzhi Ge;Jikui Luo;Richard Fu;Shurong Dong","doi":"10.1109/JMEMS.2025.3592272","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3592272","url":null,"abstract":"Bulk acoustic wave (BAW) filters are crucial components in communications systems. Ladder and lattice types are two basic filter topologies used in unbalanced and balanced systems, respectively. Compared to ladder filters, lattice filters have advantages of larger bandwidth and better trade-off between out-of-band rejection and roll-off. However, the current lattice filters are restricted by their incompatible balanced terminals with other radio frequency devices. In this work, a hybrid integration of integrated passive device (IPD) and lattice-type bulk acoustic wave (BAW) filter with unbalanced terminals was proposed. The IPD network achieved phase flip and transformed the balanced terminal into unbalanced terminal of the lattice-type BAW filter. To realize a more compact integration of the BAW device and phase-flip network, for the first time we achieved Si microcap capacitor structure, which can also be adopted for 3D integration of other acoustic and electromagnetic devices. The fabricated filter achieved a minimum insertion loss of 1.39 dB and a 3-dB bandwidth of 145 MHz, a relative bandwidth fraction of 7.2%. Compared with the ladder type filter with same resonator number, the phase-flip lattice filter achieved ~30% improvement in bandwidth. This work brings new methodology for the topology designs of lattice filters and compact integration of capacitors and inductors with BAW devices. [2025-0086]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 5","pages":"663-671"},"PeriodicalIF":3.1,"publicationDate":"2025-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145204570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-01DOI: 10.1109/JMEMS.2025.3584442
{"title":"Journal of Microelectromechanical Systems Publication Information","authors":"","doi":"10.1109/JMEMS.2025.3584442","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3584442","url":null,"abstract":"","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 4","pages":"C2-C2"},"PeriodicalIF":3.1,"publicationDate":"2025-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11106943","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144758387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-31DOI: 10.1109/JMEMS.2025.3592153
Hasan Albatayneh;Mohammad I. Younis
There is a critical need to sense the inert gas helium (He) and to inform of its leakage in critical applications such as monitoring the integrity of dry cask nuclear storage systems. This work presents a new method for the sensing and detection of helium. The concept relies on conductivity-based cooling of a heated MEMS resonant bistable structure and exploits the snap-through and pull-in instabilities to realize a sensitive sensor and a threshold electrical switch. We show that the microbeam acts as a switch and generates binary direct voltage signals for simplified readout at desired helium thresholds. Additionally, experimental data demonstrate the potential of the microdevice as a resonant sensor, with a maximum sensitivity of 6.43%/%He. The device is demonstrated to exhibit minimal sensitivity to humidity and interference from other gases such as $text{CO}_{mathbf {2}}$ . Furthermore, calibration curves for the temperature variation are generated to compensate for its effect. The proposed approach is promising for the sensitive detection of inert gases based on physical principles and for simplifying warning systems through combining sensing and actuation into a single MEMS device.
{"title":"A Conductivity-Based MEMS Detector for Helium","authors":"Hasan Albatayneh;Mohammad I. Younis","doi":"10.1109/JMEMS.2025.3592153","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3592153","url":null,"abstract":"There is a critical need to sense the inert gas helium (He) and to inform of its leakage in critical applications such as monitoring the integrity of dry cask nuclear storage systems. This work presents a new method for the sensing and detection of helium. The concept relies on conductivity-based cooling of a heated MEMS resonant bistable structure and exploits the snap-through and pull-in instabilities to realize a sensitive sensor and a threshold electrical switch. We show that the microbeam acts as a switch and generates binary direct voltage signals for simplified readout at desired helium thresholds. Additionally, experimental data demonstrate the potential of the microdevice as a resonant sensor, with a maximum sensitivity of 6.43%/%He. The device is demonstrated to exhibit minimal sensitivity to humidity and interference from other gases such as <inline-formula> <tex-math>$text{CO}_{mathbf {2}}$ </tex-math></inline-formula>. Furthermore, calibration curves for the temperature variation are generated to compensate for its effect. The proposed approach is promising for the sensitive detection of inert gases based on physical principles and for simplifying warning systems through combining sensing and actuation into a single MEMS device.","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 5","pages":"645-652"},"PeriodicalIF":3.1,"publicationDate":"2025-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145204565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-31DOI: 10.1109/JMEMS.2025.3591299
Jin Xie;Tao He;Zheng Lian;Xiao Zhang;Yongcun Hao;Honglong Chang;Zhuang Xiong;Jun Cao;Hao Zhang;Chao Zeng;Yizhuang Zhao;Jun Dai
Electrothermal actuation micro-electro-mechanical systems (MEMS) optical switches have found widespread applications in optical fields owing to their compact size, low power consumption, and continuous tunability. However, the low survivability of optical switches in high-g overload significantly impedes its application in military and aerospace. Here, we propose a MEMS optical switch based on a backside-supported electrothermal actuation mechanism to enhance its high-g survivability. A double-sided deep reactive ion etching process is developed to fabricate the backside-supported MEMS optical switch. Experimental results show that the MEMS optical switch can survive under overloads as high as 25,$000~g$ . The survival mechanism of the backside-supported MEMS optical switch under high-g inertial loading is investigated. It is the out-of-plane displacement limitation function of backside-supported beams that enhances the overload resistance. In addition, the electrothermal actuation mechanism of the backside-supported beams-incorporated optical switch is investigated. Experimental results show that the optical switch actuator fabricated demonstrates a displacement of $38.65~mu $ m at 1.05 W, which coincides well with the proposed electrothermal actuation model. We believe this work is significant for providing reliable photonic switching capabilities under extreme mechanical shocks in military/aerospace systems. [2025-0090]
{"title":"Backside-Supported Electrothermal Actuation for 25,000 g-Survivable Optical Switches","authors":"Jin Xie;Tao He;Zheng Lian;Xiao Zhang;Yongcun Hao;Honglong Chang;Zhuang Xiong;Jun Cao;Hao Zhang;Chao Zeng;Yizhuang Zhao;Jun Dai","doi":"10.1109/JMEMS.2025.3591299","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3591299","url":null,"abstract":"Electrothermal actuation micro-electro-mechanical systems (MEMS) optical switches have found widespread applications in optical fields owing to their compact size, low power consumption, and continuous tunability. However, the low survivability of optical switches in high-<italic>g</i> overload significantly impedes its application in military and aerospace. Here, we propose a MEMS optical switch based on a backside-supported electrothermal actuation mechanism to enhance its high-<italic>g</i> survivability. A double-sided deep reactive ion etching process is developed to fabricate the backside-supported MEMS optical switch. Experimental results show that the MEMS optical switch can survive under overloads as high as 25,<inline-formula> <tex-math>$000~g$ </tex-math></inline-formula>. The survival mechanism of the backside-supported MEMS optical switch under high-<italic>g</i> inertial loading is investigated. It is the out-of-plane displacement limitation function of backside-supported beams that enhances the overload resistance. In addition, the electrothermal actuation mechanism of the backside-supported beams-incorporated optical switch is investigated. Experimental results show that the optical switch actuator fabricated demonstrates a displacement of <inline-formula> <tex-math>$38.65~mu $ </tex-math></inline-formula>m at 1.05 W, which coincides well with the proposed electrothermal actuation model. We believe this work is significant for providing reliable photonic switching capabilities under extreme mechanical shocks in military/aerospace systems. [2025-0090]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 5","pages":"701-713"},"PeriodicalIF":3.1,"publicationDate":"2025-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145204552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-28DOI: 10.1109/JMEMS.2025.3591860
Bo Qi;Wenxuan Chen;Han Xu;Zhenxiang Yi;Ming Qin;Lili Gao;Qing-An Huang
A novel micro-electro-mechanical system (MEMS) thermal wind sensor based on silicon in glass (SIG) technology is proposed to eliminate temperature shift in this work. The on-chip surrounding ambient thermistor, thermally insulated from the heater, is connected to the central thermistor in the constant temperature difference (CTD) circuit. Consequently, temperature drift caused by variations in temperature coefficient of resistance (TCR) between ambient and chip sensing elements due to power supply fluctuations is mitigated. The finite element method (FEM) was employed to optimize the chip structure, ensuring that the silicon substrate remains at ambient temperature without sensitivity deterioration. Wind tunnel experiments demonstrate that the device operates within a range of 0 to 30 m/s, with power consumption varying from 72.3 mW to 116.7 mW. Compared to the sensor with off-chip ambient thermistor, the proposed device can reduce the speed error to $pm ~0.15$ m/s with a decrease of 62%. Furthermore, temperature chamber experiments reveal that wind speed errors are reduced from $pm ~0.45$ m/s to $pm ~0.15$ m/s for the ambient temperature ranging from −10° to 50°C. The proposed MEMS thermal wind sensor, characterized by high precision and low drift, can offer wide-temperature-range application in future. [2025-0084]
{"title":"Elimination of Temperature Drift for MEMS Thermal Wind Sensor With On-Chip Surrounding Thermistor","authors":"Bo Qi;Wenxuan Chen;Han Xu;Zhenxiang Yi;Ming Qin;Lili Gao;Qing-An Huang","doi":"10.1109/JMEMS.2025.3591860","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3591860","url":null,"abstract":"A novel micro-electro-mechanical system (MEMS) thermal wind sensor based on silicon in glass (SIG) technology is proposed to eliminate temperature shift in this work. The on-chip surrounding ambient thermistor, thermally insulated from the heater, is connected to the central thermistor in the constant temperature difference (CTD) circuit. Consequently, temperature drift caused by variations in temperature coefficient of resistance (TCR) between ambient and chip sensing elements due to power supply fluctuations is mitigated. The finite element method (FEM) was employed to optimize the chip structure, ensuring that the silicon substrate remains at ambient temperature without sensitivity deterioration. Wind tunnel experiments demonstrate that the device operates within a range of 0 to 30 m/s, with power consumption varying from 72.3 mW to 116.7 mW. Compared to the sensor with off-chip ambient thermistor, the proposed device can reduce the speed error to <inline-formula> <tex-math>$pm ~0.15$ </tex-math></inline-formula> m/s with a decrease of 62%. Furthermore, temperature chamber experiments reveal that wind speed errors are reduced from <inline-formula> <tex-math>$pm ~0.45$ </tex-math></inline-formula> m/s to <inline-formula> <tex-math>$pm ~0.15$ </tex-math></inline-formula> m/s for the ambient temperature ranging from −10° to 50°C. The proposed MEMS thermal wind sensor, characterized by high precision and low drift, can offer wide-temperature-range application in future. [2025-0084]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 5","pages":"672-680"},"PeriodicalIF":3.1,"publicationDate":"2025-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145204571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The micro hemispherical resonator is center-symmetric, and the mass and stiffness of the resonator are completely coupled. In instances where manufacturing errors are present, both mass perturbations and stiffness perturbations are introduced concurrently, leading to frequency split. Given that the formation errors of micro hemispherical resonator, specifically mass and stiffness disturbances, are predominantly concentrated in the shell, this paper proposes a micro hemispherical resonator with adjustable rim width, whose rim area is distributed circumferentially around the shell periphery. An equivalent geometric model of the resonator was established, and finite element simulation was used to study the influence of rim width on the frequency split of the resonator under different harmonic errors. It was determined that within a specified error range, adjusting the rim width results in a minimum value for the frequency split. To validate the effectiveness of the simulation results, the rim width was altered using femtosecond laser direct etching, and the resonant frequencies were measured at different rim widths. The experimental findings demonstrated that the frequency split of the resonator attained a minimum at a rim width of 0.7 mm, with a frequency split of only 1.09 Hz (86.44 ppm), which was 8.4 times lower than that at a rim width of 0 mm. Consequently, the method delineated in this paper can effectively mitigate the frequency split of resonator in circumstances where manufacturing errors are unavoidable, thereby significantly reducing the threshold for electrostatic trimming and offering the potential to achieve approximate frequency matching from a structural design perspective.[2025-0088]
{"title":"Frequency Split Modulation in Micro Hemispherical Resonator Based on Rim Width","authors":"Dunxiang Jian;Yan Shi;Xiang Xi;Dingbang Xiao;Xuezhong Wu","doi":"10.1109/JMEMS.2025.3589105","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3589105","url":null,"abstract":"The micro hemispherical resonator is center-symmetric, and the mass and stiffness of the resonator are completely coupled. In instances where manufacturing errors are present, both mass perturbations and stiffness perturbations are introduced concurrently, leading to frequency split. Given that the formation errors of micro hemispherical resonator, specifically mass and stiffness disturbances, are predominantly concentrated in the shell, this paper proposes a micro hemispherical resonator with adjustable rim width, whose rim area is distributed circumferentially around the shell periphery. An equivalent geometric model of the resonator was established, and finite element simulation was used to study the influence of rim width on the frequency split of the resonator under different harmonic errors. It was determined that within a specified error range, adjusting the rim width results in a minimum value for the frequency split. To validate the effectiveness of the simulation results, the rim width was altered using femtosecond laser direct etching, and the resonant frequencies were measured at different rim widths. The experimental findings demonstrated that the frequency split of the resonator attained a minimum at a rim width of 0.7 mm, with a frequency split of only 1.09 Hz (86.44 ppm), which was 8.4 times lower than that at a rim width of 0 mm. Consequently, the method delineated in this paper can effectively mitigate the frequency split of resonator in circumstances where manufacturing errors are unavoidable, thereby significantly reducing the threshold for electrostatic trimming and offering the potential to achieve approximate frequency matching from a structural design perspective.[2025-0088]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 5","pages":"571-580"},"PeriodicalIF":3.1,"publicationDate":"2025-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145204559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-24DOI: 10.1109/JMEMS.2025.3590146
Felix Wessels;Çağlar Ataman
The use of electrostatic actuation is widespread across all areas of MEMS due its speed, ease-of-integration and simplicity. However, its relatively low force density typically requires high driving voltages, especially in parallel-plate configurations. This work presents a modular, high-voltage pulse-width modulation (PWM) driver that can deliver an actuation signal with analogue-like control at voltages of up to 600V and frequencies of up to 10kHz. In comparison to conventional analogue amplifier arrays, this approach can be realized with less expensive components, while enabling using polar liquid dielectrics to boost the resulting force. A detailed analysis of the potential and requirements for liquid dielectrics in combination with PWM is provided as theoretical background. We evaluate the performance of the new driver using a transmissive optofluidic wavefront modulator (Deformable Phase Plate), demonstrating actuation with both non-polar and polar liquid dielectrics. Whereas non-polar liquids lead to a linear force–duty-cycle relationship, the behavior follows a quadratic curve for polar liquids with the maximum force at 50%, with successful operation requiring a minimum frequency depending on the employed liquid. We provide design recommendations for maximizing performance regarding force generation and possible actuation range, taking advantage of the possibility to use polar liquid in electrostatic MEMS actuation. [2025-0106]
{"title":"Modeling and Characterization of Pulse-Width Modulation Driving of Electrostatic Actuators With Polar Dielectrics","authors":"Felix Wessels;Çağlar Ataman","doi":"10.1109/JMEMS.2025.3590146","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3590146","url":null,"abstract":"The use of electrostatic actuation is widespread across all areas of MEMS due its speed, ease-of-integration and simplicity. However, its relatively low force density typically requires high driving voltages, especially in parallel-plate configurations. This work presents a modular, high-voltage pulse-width modulation (PWM) driver that can deliver an actuation signal with analogue-like control at voltages of up to 600V and frequencies of up to 10kHz. In comparison to conventional analogue amplifier arrays, this approach can be realized with less expensive components, while enabling using polar liquid dielectrics to boost the resulting force. A detailed analysis of the potential and requirements for liquid dielectrics in combination with PWM is provided as theoretical background. We evaluate the performance of the new driver using a transmissive optofluidic wavefront modulator (Deformable Phase Plate), demonstrating actuation with both non-polar and polar liquid dielectrics. Whereas non-polar liquids lead to a linear force–duty-cycle relationship, the behavior follows a quadratic curve for polar liquids with the maximum force at 50%, with successful operation requiring a minimum frequency depending on the employed liquid. We provide design recommendations for maximizing performance regarding force generation and possible actuation range, taking advantage of the possibility to use polar liquid in electrostatic MEMS actuation. [2025-0106]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 5","pages":"681-690"},"PeriodicalIF":3.1,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145204550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Fused silica, renowned for its excellent mechanical properties and thermal stability, has emerged as an ideal material for microelectromechanical system (MEMS) gyroscopes. However, the planar microfabrication of fused silica remains a widely recognized challenge that has long hindered the advancement of related devices. In this study, we present a novel planar processing technique for fused silica MEMS gyroscopes based on laser-induced assisted etching (LIAE). Using this method, we successfully fabricated a vibrating ring gyroscope (VRG) structure with an aspect ratio exceeding 50:1. Characterization results show that the device exhibits a resonant frequency of approximately 15.9 kHz and achieves a quality factor exceeding 200,000 under a vacuum condition of 0.1 Pa, indicating exceptional resonant performance. This technique enables the realization of high-performance fused silica MEMS gyroscopes and provides a promising fabrication pathway for other MEMS devices requiring ultra-high aspect ratio structures. [2025-0101]
{"title":"A Novel All-Fused Silica MEMS Gyroscope With an Aspect Ratio Exceeding 50:1","authors":"Maobo Wang;Qingsong Li;Kai Wu;Xinyu Wang;Zhanqiang Hou;Yan Shi;Xuezhong Wu;Dingbang Xiao","doi":"10.1109/JMEMS.2025.3589803","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3589803","url":null,"abstract":"Fused silica, renowned for its excellent mechanical properties and thermal stability, has emerged as an ideal material for microelectromechanical system (MEMS) gyroscopes. However, the planar microfabrication of fused silica remains a widely recognized challenge that has long hindered the advancement of related devices. In this study, we present a novel planar processing technique for fused silica MEMS gyroscopes based on laser-induced assisted etching (LIAE). Using this method, we successfully fabricated a vibrating ring gyroscope (VRG) structure with an aspect ratio exceeding 50:1. Characterization results show that the device exhibits a resonant frequency of approximately 15.9 kHz and achieves a quality factor exceeding 200,000 under a vacuum condition of 0.1 Pa, indicating exceptional resonant performance. This technique enables the realization of high-performance fused silica MEMS gyroscopes and provides a promising fabrication pathway for other MEMS devices requiring ultra-high aspect ratio structures. [2025-0101]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 5","pages":"516-518"},"PeriodicalIF":3.1,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145204562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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