Pub Date : 2019-07-01DOI: 10.1109/IPFA47161.2019.8984870
Chi Zhang, Sheng Li, Siyang Liu, Jiaxing Wei, Wangran Wu, Weifeng Sun
High temperature performances of commercial cascode GaN FET and p-GaN HEMT are investigated and compared in this paper. The differences of device structures lead to quite different high temperatures performances. The p-GaN device shows smaller shifts in threshold voltage but larger increase in gate leakage current at high temperatures than cascode device. Moreover, high temperatures also lead to different variations in dynamic electrical parameters. By using analytical models, it is found that the decrease of electron mobility dominates the variations in switching parameters for p-GaN device, however, the decrease of Vth dominates the variations for cascode device.
{"title":"Electrical Performances and Physics Based Analysis of 650V E-mode GaN Devices at High Temperatures","authors":"Chi Zhang, Sheng Li, Siyang Liu, Jiaxing Wei, Wangran Wu, Weifeng Sun","doi":"10.1109/IPFA47161.2019.8984870","DOIUrl":"https://doi.org/10.1109/IPFA47161.2019.8984870","url":null,"abstract":"High temperature performances of commercial cascode GaN FET and p-GaN HEMT are investigated and compared in this paper. The differences of device structures lead to quite different high temperatures performances. The p-GaN device shows smaller shifts in threshold voltage but larger increase in gate leakage current at high temperatures than cascode device. Moreover, high temperatures also lead to different variations in dynamic electrical parameters. By using analytical models, it is found that the decrease of electron mobility dominates the variations in switching parameters for p-GaN device, however, the decrease of Vth dominates the variations for cascode device.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131598643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.1109/IPFA47161.2019.8984886
Carlo M. Casabuena, E. J. de La Cruz
This case study outlines the successful package-level failure site detection by optimizing the Lock-In Thermography (LIT) frequency based on resistance, combined with 3D X-ray for locating the defect and EDX (Energy Dispersive X-ray) for root-cause analysis. By optimizing the lock-in frequency, the exact location of the defect on the package was identified, thus, leading to effective determination of failure mechanism and accurate root cause investigation.
{"title":"Case Study on Package Level Defect Localization through Optimized Lock-in Thermography Frequency","authors":"Carlo M. Casabuena, E. J. de La Cruz","doi":"10.1109/IPFA47161.2019.8984886","DOIUrl":"https://doi.org/10.1109/IPFA47161.2019.8984886","url":null,"abstract":"This case study outlines the successful package-level failure site detection by optimizing the Lock-In Thermography (LIT) frequency based on resistance, combined with 3D X-ray for locating the defect and EDX (Energy Dispersive X-ray) for root-cause analysis. By optimizing the lock-in frequency, the exact location of the defect on the package was identified, thus, leading to effective determination of failure mechanism and accurate root cause investigation.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114936490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.1109/IPFA47161.2019.8984809
E. Sebastian, Jie Zhu, Z. Mo
Si nano-crystals (NCs) based flash memory is less susceptible to charge loss in tunnel oxide, allowing tunnel oxide reduction from ~100A to ~50A and therefore lower operating voltage and improved cycling endurance performance. Most critical parameters controlling Si NCs performance include size, size distribution and optimal area density (#/cm2). Objective of this study includes developing an image processing method for large population of Si NCs characterization, evaluating and comparing different electron microscope imaging techniques and studying Si NCs structural defects.
{"title":"Si Nano-Crystal Size and Structural Defect Characterization Using Electron Microscopes","authors":"E. Sebastian, Jie Zhu, Z. Mo","doi":"10.1109/IPFA47161.2019.8984809","DOIUrl":"https://doi.org/10.1109/IPFA47161.2019.8984809","url":null,"abstract":"Si nano-crystals (NCs) based flash memory is less susceptible to charge loss in tunnel oxide, allowing tunnel oxide reduction from ~100A to ~50A and therefore lower operating voltage and improved cycling endurance performance. Most critical parameters controlling Si NCs performance include size, size distribution and optimal area density (#/cm2). Objective of this study includes developing an image processing method for large population of Si NCs characterization, evaluating and comparing different electron microscope imaging techniques and studying Si NCs structural defects.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115204981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.1109/IPFA47161.2019.8984864
Zhang Yanqing, Mao Guoliang, Wang Tianqi, Li Chaoming, Huo Mingxue, Qiao Chunhua
In this study, the degradation effects of inverted metamorphic four-junction (IMM4J) solar cells were investigated after 1 MeV electron irradiation using spectral response and electrical property measurements. The results show that, similar to traditional tri-junction (TJ) GaInP/GaAs/Ge solar cells, the electrical properties (such as Isc, Voc, and Pmax) degrade as a function of logφ, where φ represents the electron fluence. In particular, the degradation of Voc is more serious than that of Isc because of the sum rule for Voc and the limit rule for Isc in IMM4J cells. Analysis of the spectral response curves indicates that, unlike traditional TJ cells, the In0.3Ga0.7As (1.0 eV) sub-cell exhibits the most severe damage in the irradiated IMM4J cells and the In0.58Ga0.42As sub-cell becomes a limits part for the electrical properties of the IMM4J solar cells.
{"title":"Degradation behaviour of electrical properties of inverted metamorphic four-junction (IMM4J) solar cells under 1 MeV electron irradiation","authors":"Zhang Yanqing, Mao Guoliang, Wang Tianqi, Li Chaoming, Huo Mingxue, Qiao Chunhua","doi":"10.1109/IPFA47161.2019.8984864","DOIUrl":"https://doi.org/10.1109/IPFA47161.2019.8984864","url":null,"abstract":"In this study, the degradation effects of inverted metamorphic four-junction (IMM4J) solar cells were investigated after 1 MeV electron irradiation using spectral response and electrical property measurements. The results show that, similar to traditional tri-junction (TJ) GaInP/GaAs/Ge solar cells, the electrical properties (such as I<inf>sc</inf>, V<inf>oc</inf>, and P<inf>max</inf>) degrade as a function of logφ, where φ represents the electron fluence. In particular, the degradation of V<inf>oc</inf> is more serious than that of I<inf>sc</inf> because of the sum rule for V<inf>oc</inf> and the limit rule for I<inf>sc</inf> in IMM4J cells. Analysis of the spectral response curves indicates that, unlike traditional TJ cells, the In<inf>0.3</inf>Ga<inf>0.7</inf>As (1.0 eV) sub-cell exhibits the most severe damage in the irradiated IMM4J cells and the In<inf>0.58</inf>Ga<inf>0.42</inf>As sub-cell becomes a limits part for the electrical properties of the IMM4J solar cells.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115206568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Galvanic corrosion of copper wire in high humidity conditions has been widely studied. Cu-Al system in water forms a battery cell and Al is corroded. The commonly known factors that accelerate the corrosion include humidity, ions, pH, etc. In a real case failure analysis and biased high humidity test, an accelerated corrosion was observed to be related with bias or current direction. The GND copper wire terminal disconnection was proved to be easier to occur, and electrochemical reactions identified as electrolytic cells played a dominant role. The failure mechanism is hard to be recognized sometimes for carbonized molding compound surrounded around the pad, which will lead to an improper conclusion of electrical overstress (EOS). Electrical field accelerated corrosion is a degradation process which might not cause a sudden failure.
{"title":"Electrical field accelerated GND corrosion of copper wire in high humidity conditions","authors":"Xuanlong Chen, Jianming Fang, Wenfeng Huang, Yong Wei, Chengcheng Chen","doi":"10.1109/IPFA47161.2019.8984767","DOIUrl":"https://doi.org/10.1109/IPFA47161.2019.8984767","url":null,"abstract":"Galvanic corrosion of copper wire in high humidity conditions has been widely studied. Cu-Al system in water forms a battery cell and Al is corroded. The commonly known factors that accelerate the corrosion include humidity, ions, pH, etc. In a real case failure analysis and biased high humidity test, an accelerated corrosion was observed to be related with bias or current direction. The GND copper wire terminal disconnection was proved to be easier to occur, and electrochemical reactions identified as electrolytic cells played a dominant role. The failure mechanism is hard to be recognized sometimes for carbonized molding compound surrounded around the pad, which will lead to an improper conclusion of electrical overstress (EOS). Electrical field accelerated corrosion is a degradation process which might not cause a sudden failure.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115329552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.1109/IPFA47161.2019.8984866
Jed Paolo Deligente
Temperature dependent failures have always presented challenges in failure analysis of advanced mixed signal integrated circuits. Soft defect localization (SDL) has been proven a reliable fault isolation technique however, reliable capture of pass/fail signal conditions, temperature characterization and laser synchronization are vital in having an effective SDL result. This paper presents a case study which demonstrates how NI-PXI system was utilized as a test and synchronization platform with DALS module of Hamamatsu iPHEMOS.
{"title":"Soft Defect Localization (SDL) of Temperature Dependent Failure using NI-PXI Test Platform in DALS System","authors":"Jed Paolo Deligente","doi":"10.1109/IPFA47161.2019.8984866","DOIUrl":"https://doi.org/10.1109/IPFA47161.2019.8984866","url":null,"abstract":"Temperature dependent failures have always presented challenges in failure analysis of advanced mixed signal integrated circuits. Soft defect localization (SDL) has been proven a reliable fault isolation technique however, reliable capture of pass/fail signal conditions, temperature characterization and laser synchronization are vital in having an effective SDL result. This paper presents a case study which demonstrates how NI-PXI system was utilized as a test and synchronization platform with DALS module of Hamamatsu iPHEMOS.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124231102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.1109/IPFA47161.2019.8984908
H. Hamed, V. Wang
In this paper we study and assess fine-pitch CPB fcCSP BGA package reliability via the study of bump cross section morphology after product reliability stress testing. The IMC formation and progression in copper pillar bump was studied in Mass Production destined SoC Controller to predict the health and life time left for the CPB. In particular we are interested in the reliability of fine-pitch oblong copper pillar bumps arranged in Omni-directional patterns. During product reliability testing, CPB cross-section analysis (Via P-FIB) was performed on CPB bumps strategically located in different sections of the fcCSP BGA package after each reliability test read point. JEDEC standard suite of package related tests were performed. IMC formation and progression under the effect of abovementioned environmental stresses as well as different assembly line variations and materials, including molding compound and substrate, were taken into account. We also compare IMC formation from two different bumping technologies. By assessing the various IMC, void and crack formations, we propose that the product reliability engineer should consider verifying health of product physically in addition to ATE final test. This paper also provides feedback to package technology development from product reliability point of view.
{"title":"CPB fcCSP BGA Package Reliability assessment via the study of Bump Cross Section Morphology after Product Realiability stress testing","authors":"H. Hamed, V. Wang","doi":"10.1109/IPFA47161.2019.8984908","DOIUrl":"https://doi.org/10.1109/IPFA47161.2019.8984908","url":null,"abstract":"In this paper we study and assess fine-pitch CPB fcCSP BGA package reliability via the study of bump cross section morphology after product reliability stress testing. The IMC formation and progression in copper pillar bump was studied in Mass Production destined SoC Controller to predict the health and life time left for the CPB. In particular we are interested in the reliability of fine-pitch oblong copper pillar bumps arranged in Omni-directional patterns. During product reliability testing, CPB cross-section analysis (Via P-FIB) was performed on CPB bumps strategically located in different sections of the fcCSP BGA package after each reliability test read point. JEDEC standard suite of package related tests were performed. IMC formation and progression under the effect of abovementioned environmental stresses as well as different assembly line variations and materials, including molding compound and substrate, were taken into account. We also compare IMC formation from two different bumping technologies. By assessing the various IMC, void and crack formations, we propose that the product reliability engineer should consider verifying health of product physically in addition to ATE final test. This paper also provides feedback to package technology development from product reliability point of view.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124308265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.1109/IPFA47161.2019.8984871
Yanlin Pan, Yuzhe Zhao, P. K. Tan, P. Khoo, P. Y. Yeo, Siong Luong TING, H. Tan, C. Chen
With continuous technology scaling of semiconductor devices, conventional physical failure analysis (PFA) techniques becomes more and more challenging with the increased number of transistors and layer stacks. This paper presents a new memory bit-counting method in PFA by employing laser deprocessing technique (LDT). This LDT assisted new method is more cost-effective and efficient in the PFA on memory bit-counting in terms of shortening the total FA cycle time and lowering the requirements for the experimental equipment, which leads to the increase of PFA throughput in memory devices especially for high technology nodes.
{"title":"Application of Laser Deprocessing Technique in Physical Failure Analysis on Memory Bit-counting","authors":"Yanlin Pan, Yuzhe Zhao, P. K. Tan, P. Khoo, P. Y. Yeo, Siong Luong TING, H. Tan, C. Chen","doi":"10.1109/IPFA47161.2019.8984871","DOIUrl":"https://doi.org/10.1109/IPFA47161.2019.8984871","url":null,"abstract":"With continuous technology scaling of semiconductor devices, conventional physical failure analysis (PFA) techniques becomes more and more challenging with the increased number of transistors and layer stacks. This paper presents a new memory bit-counting method in PFA by employing laser deprocessing technique (LDT). This LDT assisted new method is more cost-effective and efficient in the PFA on memory bit-counting in terms of shortening the total FA cycle time and lowering the requirements for the experimental equipment, which leads to the increase of PFA throughput in memory devices especially for high technology nodes.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121331305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.1109/IPFA47161.2019.8984836
M.H. Thor, S. Goh, B. Yeoh, H. Hao, Y. Chan, Zhao Lin
In this paper, we report a new dynamic laser stimulation technique based on optical beam-induced current (OBIC) variation mapping for global fault localization. A production tester exercised the chip dynamically whilst a 1064 nm wavelength laser rasters the region of interest through the silicon substrate. The OBIC variation with test cycles is recorded for every scanned pixel and translated into a current profile for pattern matching to determine the suspected defect location. Unlike laser-assisted device-alteration (LADA) which uses the same laser, this technique applies to hard defects. Four case studies successfully demonstrated the feasibility of this technique.
{"title":"Fault Localization Using Dynamic Optical-beam Induced Current Variation Mapping","authors":"M.H. Thor, S. Goh, B. Yeoh, H. Hao, Y. Chan, Zhao Lin","doi":"10.1109/IPFA47161.2019.8984836","DOIUrl":"https://doi.org/10.1109/IPFA47161.2019.8984836","url":null,"abstract":"In this paper, we report a new dynamic laser stimulation technique based on optical beam-induced current (OBIC) variation mapping for global fault localization. A production tester exercised the chip dynamically whilst a 1064 nm wavelength laser rasters the region of interest through the silicon substrate. The OBIC variation with test cycles is recorded for every scanned pixel and translated into a current profile for pattern matching to determine the suspected defect location. Unlike laser-assisted device-alteration (LADA) which uses the same laser, this technique applies to hard defects. Four case studies successfully demonstrated the feasibility of this technique.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115921600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.1109/IPFA47161.2019.8984904
Kuan-Chieh Huang, Yi-Chen Lin
Precise defect positioning by EFA has become critically important for yield improvement due to the reduction in CMOS size and the increase in complexity. Some kind of leakage current caused by metal defects could not be detected by conventional Photo emission microscope (like InGaAs EMMI), because the InGaAs detector responds to near-infrared light (NIR); therefore, the Lock-in thermography (LIT) equipped with the InSb camera is used for the detection of mid-infrared wavelength (MIR), and has better sensitivity in the heat dissipation. The LIT system has been proven to be very useful in 3D packaging or PCBs failure analysis. In this article, we utilize the sensitivity of LIT system and compare the emission differences between EMMI and LIT in three different cases. By understanding the characteristics of the LIT system in IC detection, we realized the emission differences it represents and have succeeded in positioning the defect location and finding the real reason for failure.
{"title":"The Application of Thermal Sensor to Locate IC Defects in Failure Analysis","authors":"Kuan-Chieh Huang, Yi-Chen Lin","doi":"10.1109/IPFA47161.2019.8984904","DOIUrl":"https://doi.org/10.1109/IPFA47161.2019.8984904","url":null,"abstract":"Precise defect positioning by EFA has become critically important for yield improvement due to the reduction in CMOS size and the increase in complexity. Some kind of leakage current caused by metal defects could not be detected by conventional Photo emission microscope (like InGaAs EMMI), because the InGaAs detector responds to near-infrared light (NIR); therefore, the Lock-in thermography (LIT) equipped with the InSb camera is used for the detection of mid-infrared wavelength (MIR), and has better sensitivity in the heat dissipation. The LIT system has been proven to be very useful in 3D packaging or PCBs failure analysis. In this article, we utilize the sensitivity of LIT system and compare the emission differences between EMMI and LIT in three different cases. By understanding the characteristics of the LIT system in IC detection, we realized the emission differences it represents and have succeeded in positioning the defect location and finding the real reason for failure.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125019591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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