Pub Date : 2019-07-01DOI: 10.1109/IPFA47161.2019.8984869
Lin Zhao, Y. Ngow, S. Goh, Y. Chan, Hao Hu, F. Jeff, CC Tay
Bitmapping commonly refers to the localization of memory defects prior to physical inspection. With the pervasive use of embedded memories in modern silicon-on-chips (SoC), memory built-in self-tests (MBIST) become the only means to access and evaluate the memory cells. In the event of a failure, the accuracy of defect isolation depends heavily on the quality of MBIST diagnostic to acquire the correct failing details. Although the workflow to enable diagnostic is well established, challenges exist during actual implementations leading to errors in localization. Based upon the authors’ experiences, this paper seeks to highlight possible areas of concern and describe solutions to overcome them.
{"title":"Accurate Memory Bitmapping based on Built-in Self-Test: Challenges and Solutions","authors":"Lin Zhao, Y. Ngow, S. Goh, Y. Chan, Hao Hu, F. Jeff, CC Tay","doi":"10.1109/IPFA47161.2019.8984869","DOIUrl":"https://doi.org/10.1109/IPFA47161.2019.8984869","url":null,"abstract":"Bitmapping commonly refers to the localization of memory defects prior to physical inspection. With the pervasive use of embedded memories in modern silicon-on-chips (SoC), memory built-in self-tests (MBIST) become the only means to access and evaluate the memory cells. In the event of a failure, the accuracy of defect isolation depends heavily on the quality of MBIST diagnostic to acquire the correct failing details. Although the workflow to enable diagnostic is well established, challenges exist during actual implementations leading to errors in localization. Based upon the authors’ experiences, this paper seeks to highlight possible areas of concern and describe solutions to overcome them.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128730828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.1109/IPFA47161.2019.8984883
Fei Gao, X. Gong, Yufeng Guo, X. Lian, Yi Tong, Yihao Chen, Yuefeng Li, Miaocheng Zhang, Yu Wang, Nan He, Xinyi Shen, Ertao Hu, Xiang Wan
Physical realization of electrical synapses with good reliability aroused great interest due to rapid development of neuromorphic computing. Meanwhile, a new family of two-dimensional transition metal carbides (TMC) has exhibited great potential in performance improvement of electronic devices. However, there are very few investigations for performing synaptic devices using transition metal carbides. Moreover, reliability is crucial for achieving good biological plasticity as well as a controllable synaptic system. In this work, synaptic devices with transition metal carbide were successfully fabricated and reliability has been studied in details. Resistance window of memristor has been able to achieve 7 orders, which provides a possible solution in building artificial neural networks with accurate and efficient learning capability.
{"title":"Performance Variability and Analog Behaviors of Memristive Devices with New Transition Metal Carbide","authors":"Fei Gao, X. Gong, Yufeng Guo, X. Lian, Yi Tong, Yihao Chen, Yuefeng Li, Miaocheng Zhang, Yu Wang, Nan He, Xinyi Shen, Ertao Hu, Xiang Wan","doi":"10.1109/IPFA47161.2019.8984883","DOIUrl":"https://doi.org/10.1109/IPFA47161.2019.8984883","url":null,"abstract":"Physical realization of electrical synapses with good reliability aroused great interest due to rapid development of neuromorphic computing. Meanwhile, a new family of two-dimensional transition metal carbides (TMC) has exhibited great potential in performance improvement of electronic devices. However, there are very few investigations for performing synaptic devices using transition metal carbides. Moreover, reliability is crucial for achieving good biological plasticity as well as a controllable synaptic system. In this work, synaptic devices with transition metal carbide were successfully fabricated and reliability has been studied in details. Resistance window of memristor has been able to achieve 7 orders, which provides a possible solution in building artificial neural networks with accurate and efficient learning capability.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129267892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this paper, we analyzed the reduction of the signal-to-noise ratio of the signal received by the system caused by the failure of a GaAs device. By the means of fault tree, it can be concluded that the failure is in that the operating point of the GaAs device was not selected at the appropriate gate voltage bias position, and at the same time the device gain decreased under the hydrogen effect. Finally, it led to the systematic function failure. A large number of contrast tests concerning the failure components and the samples were designed and implemented during the analysis. The suitable working bias voltage was determined. The degradation impact caused by the hydrogen effect on the GaAs device performance was analyzed. It provides reference for controlling the failure mode of the device during its subsequent production and application.
{"title":"Failure Analysis of the Effect of Hydrogen on GaAs Device","authors":"Chao Duan, Zhimin Ding, Zhaoxi Wu, Xiaoqing Wang, Chao Li, Xu Wang","doi":"10.1109/IPFA47161.2019.8984798","DOIUrl":"https://doi.org/10.1109/IPFA47161.2019.8984798","url":null,"abstract":"In this paper, we analyzed the reduction of the signal-to-noise ratio of the signal received by the system caused by the failure of a GaAs device. By the means of fault tree, it can be concluded that the failure is in that the operating point of the GaAs device was not selected at the appropriate gate voltage bias position, and at the same time the device gain decreased under the hydrogen effect. Finally, it led to the systematic function failure. A large number of contrast tests concerning the failure components and the samples were designed and implemented during the analysis. The suitable working bias voltage was determined. The degradation impact caused by the hydrogen effect on the GaAs device performance was analyzed. It provides reference for controlling the failure mode of the device during its subsequent production and application.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117049489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.1109/IPFA47161.2019.8984905
Y. Yamagishi, Yasuo Cho
High resolution observation of density of interface states (Hit) at SiO2/4H-SiC interfaces was performed by local deep level transient spectroscopy based on time-resolved scanning nonlinear dielectric microscopy (tr-SNDM). The sizes of the non-uniform contrasts observed in the map of Dit were in the order of several tens of nanometers, which are smaller than the value reported in the previous study (>100 nm). The simulation of the tr-SNDM measurement suggested that the spatial resolution of tr-SNDM is down to the tip radius of the cantilever used for the measurement and can be smaller than the lateral spread of the depletion layer width.
{"title":"High Resolution Mapping of Defects at SiO2/SiC Interfaces by Local-DLTS Based on Time-Resolved Scanning Nonlinear Dielectric Microscopy","authors":"Y. Yamagishi, Yasuo Cho","doi":"10.1109/IPFA47161.2019.8984905","DOIUrl":"https://doi.org/10.1109/IPFA47161.2019.8984905","url":null,"abstract":"High resolution observation of density of interface states (Hit) at SiO2/4H-SiC interfaces was performed by local deep level transient spectroscopy based on time-resolved scanning nonlinear dielectric microscopy (tr-SNDM). The sizes of the non-uniform contrasts observed in the map of Dit were in the order of several tens of nanometers, which are smaller than the value reported in the previous study (>100 nm). The simulation of the tr-SNDM measurement suggested that the spatial resolution of tr-SNDM is down to the tip radius of the cantilever used for the measurement and can be smaller than the lateral spread of the depletion layer width.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115510164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.1109/ipfa47161.2019.8984827
{"title":"[IPFA 2019 Front matter]","authors":"","doi":"10.1109/ipfa47161.2019.8984827","DOIUrl":"https://doi.org/10.1109/ipfa47161.2019.8984827","url":null,"abstract":"","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114395115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.1109/IPFA47161.2019.8984839
D. Nam, Hyunjun Ryu, Shin-Young Chung, Brandon Lee, Sukchan Song, Eunbee Go, Bongsu Chae, A. Kim, Bomi Kim, Hae-Suk Kim, Ji-Sun Yang, SoYeon Han
The origin of poly-Si unetch failure in FinField-effect transistor (FinFET) was defined as an etch rate dependence of a specific Si grain in Si poly crystalline. We analyzed a failure in a FinFET based static random access memory (SRAM). Abnormal point in a passive voltage contrast result was measured by nano-probing and fast Vth shift was detected at a pull down node in SRAM. Transmission electron microscopy (TEM) was applied to find out the cause of the failure, finding that poly-Si in dummy gate was not successfully etched. High-resolution TEM and fast Fourier transformation analysis showed that there was a (111) Si grain. The etch rate of (111) Si is 1–2% of (110) Si, which leads poly-Si unetch failure in gate in a FinFET structure.
{"title":"Poly-Si Unetch Failure Due to Etching Rate Dependence of Si Orientation","authors":"D. Nam, Hyunjun Ryu, Shin-Young Chung, Brandon Lee, Sukchan Song, Eunbee Go, Bongsu Chae, A. Kim, Bomi Kim, Hae-Suk Kim, Ji-Sun Yang, SoYeon Han","doi":"10.1109/IPFA47161.2019.8984839","DOIUrl":"https://doi.org/10.1109/IPFA47161.2019.8984839","url":null,"abstract":"The origin of poly-Si unetch failure in FinField-effect transistor (FinFET) was defined as an etch rate dependence of a specific Si grain in Si poly crystalline. We analyzed a failure in a FinFET based static random access memory (SRAM). Abnormal point in a passive voltage contrast result was measured by nano-probing and fast Vth shift was detected at a pull down node in SRAM. Transmission electron microscopy (TEM) was applied to find out the cause of the failure, finding that poly-Si in dummy gate was not successfully etched. High-resolution TEM and fast Fourier transformation analysis showed that there was a (111) Si grain. The etch rate of (111) Si is 1–2% of (110) Si, which leads poly-Si unetch failure in gate in a FinFET structure.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125883878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.1109/IPFA47161.2019.8984807
Chunhua Qi, G. Zhai, Guoliang Ma, Tianqi Wang, Chaoming Liu, Liyi Xiao, Heyi Li, Yanqing Zhang, Kairui Guo, Mingxue Huo
In this paper, a novel radiation hardened memory cell for low-voltage operation and ultralow power space applications is proposed, and named as RHDMC. By special layout design, RHDMC can not only tolerate single event upset, but also can mitigate single event multiple upsets. Compared with recently published low power memory cell for low-voltage operation, simulation results (not on experimental data) show that, at the expense of a 129.5% area overhead, the proposed memory cell can provide much lower power consumption during SEU occurrence. To make comparisons, access time and power are also investigated between our proposed memory and LA13T.
{"title":"Radiation-Hardened Memory Cell for Ultralow Power Space Applications","authors":"Chunhua Qi, G. Zhai, Guoliang Ma, Tianqi Wang, Chaoming Liu, Liyi Xiao, Heyi Li, Yanqing Zhang, Kairui Guo, Mingxue Huo","doi":"10.1109/IPFA47161.2019.8984807","DOIUrl":"https://doi.org/10.1109/IPFA47161.2019.8984807","url":null,"abstract":"In this paper, a novel radiation hardened memory cell for low-voltage operation and ultralow power space applications is proposed, and named as RHDMC. By special layout design, RHDMC can not only tolerate single event upset, but also can mitigate single event multiple upsets. Compared with recently published low power memory cell for low-voltage operation, simulation results (not on experimental data) show that, at the expense of a 129.5% area overhead, the proposed memory cell can provide much lower power consumption during SEU occurrence. To make comparisons, access time and power are also investigated between our proposed memory and LA13T.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"137 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124320172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.1109/IPFA47161.2019.8984903
Yang Yu, Yuanxin Lee
On-board optical module, which implements photoelectric transformation, has been widely applied in communications industry. Any contamination blocking optical transmission will decrease its power distinctly, therefore, the cleanliness of interface between the OBT(On-board Transceiver) and MT ferrule is in need of great attention. In this paper, we will show a case about on-board optical module failure due to pollution during the production. Through a systematic failure analytical method and using material analysis techniques, we identified the unknown matter and found out the roots of the problem.
{"title":"Case study of on-board optical module failure induced by PDMS","authors":"Yang Yu, Yuanxin Lee","doi":"10.1109/IPFA47161.2019.8984903","DOIUrl":"https://doi.org/10.1109/IPFA47161.2019.8984903","url":null,"abstract":"On-board optical module, which implements photoelectric transformation, has been widely applied in communications industry. Any contamination blocking optical transmission will decrease its power distinctly, therefore, the cleanliness of interface between the OBT(On-board Transceiver) and MT ferrule is in need of great attention. In this paper, we will show a case about on-board optical module failure due to pollution during the production. Through a systematic failure analytical method and using material analysis techniques, we identified the unknown matter and found out the roots of the problem.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122588811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.1109/IPFA47161.2019.8984876
W. Hsu, Yu Hsiang Shu, Chenglong Pan
Implant defects are difficult to discover because they are not quantified easily and not like bridge or open physical defects to find them by standard FA’s instruments We can get electrical proof but hard to prove the relationship with implant defects. Here we highlight a phenomenon by higher electron beam accelerating voltage of SEM (Scanning Electron Microscope), through the different penetration depth of electrical charges in silicon; we can observe the variation of contrast images at abnormal area of SRAM to verify possible implant defects.
{"title":"Using Higher Accelerating Voltage of SEM to Dig Out Implant Defects","authors":"W. Hsu, Yu Hsiang Shu, Chenglong Pan","doi":"10.1109/IPFA47161.2019.8984876","DOIUrl":"https://doi.org/10.1109/IPFA47161.2019.8984876","url":null,"abstract":"Implant defects are difficult to discover because they are not quantified easily and not like bridge or open physical defects to find them by standard FA’s instruments We can get electrical proof but hard to prove the relationship with implant defects. Here we highlight a phenomenon by higher electron beam accelerating voltage of SEM (Scanning Electron Microscope), through the different penetration depth of electrical charges in silicon; we can observe the variation of contrast images at abnormal area of SRAM to verify possible implant defects.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121488946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.1109/IPFA47161.2019.8984825
Zhuojun Chen, Wenzhao Lu, Ming Wu, W. Peng, Yun Zeng, Xiangliang Jin
In this paper, the total ionizing dose (TID) effects on low voltage triggering silicon controlled rectifier (LVTSCR) and LDMOS-SCR are studied for low voltage (LV) and high voltage (HV) ESD protections, respectively. They are fabricated in a 5V/24V 0.5-μm CDMOS process and exposed to 60Co gamma rays up to 200 krad(Si). The transmission line pulse (TLP) tests are performed before and after irradiation, and then the ESD performances are compared and discussed.
{"title":"Comparative Study of Total Ionizing Dose Effects on the Silicon-Controlled Rectifier Devices for HV and LV ESD Protections","authors":"Zhuojun Chen, Wenzhao Lu, Ming Wu, W. Peng, Yun Zeng, Xiangliang Jin","doi":"10.1109/IPFA47161.2019.8984825","DOIUrl":"https://doi.org/10.1109/IPFA47161.2019.8984825","url":null,"abstract":"In this paper, the total ionizing dose (TID) effects on low voltage triggering silicon controlled rectifier (LVTSCR) and LDMOS-SCR are studied for low voltage (LV) and high voltage (HV) ESD protections, respectively. They are fabricated in a 5V/24V 0.5-μm CDMOS process and exposed to 60Co gamma rays up to 200 krad(Si). The transmission line pulse (TLP) tests are performed before and after irradiation, and then the ESD performances are compared and discussed.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125296529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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