Pub Date : 2023-10-01DOI: 10.1088/1674-4926/44/10/102302
Tianjiang He, Suping Liu, Wei Li, Li Zhong, Xiaoyu Ma, Cong Xiong, Nan Lin, Zhennuo Wang
Abstract Output power and reliability are the most important characteristic parameters of semiconductor lasers. However, catastrophic optical damage (COD), which usually occurs on the cavity surface, will seriously damage the further improvement of the output power and affect the reliability. To improve the anti-optical disaster ability of the cavity surface, a non-absorption window (NAW) is adopted for the 915 nm InGaAsP/GaAsP single-quantum well semiconductor laser using quantum well mixing (QWI) induced by impurity-free vacancy. Both the principle and the process of point defect diffusion are described in detail in this paper. We also studied the effects of annealing temperature, annealing time, and the thickness of SiO 2 film on the quantum well mixing in a semiconductor laser with a primary epitaxial structure, which is distinct from the previous structures. We found that when compared with the complete epitaxial structure, the blue shift of the semiconductor laser with the primary epitaxial structure is larger under the same conditions. To obtain the appropriate blue shift window, the primary epitaxial structure can use a lower annealing temperature and shorter annealing time. In addition, the process is less expensive. We also provide references for upcoming device fabrication.
{"title":"Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser","authors":"Tianjiang He, Suping Liu, Wei Li, Li Zhong, Xiaoyu Ma, Cong Xiong, Nan Lin, Zhennuo Wang","doi":"10.1088/1674-4926/44/10/102302","DOIUrl":"https://doi.org/10.1088/1674-4926/44/10/102302","url":null,"abstract":"Abstract Output power and reliability are the most important characteristic parameters of semiconductor lasers. However, catastrophic optical damage (COD), which usually occurs on the cavity surface, will seriously damage the further improvement of the output power and affect the reliability. To improve the anti-optical disaster ability of the cavity surface, a non-absorption window (NAW) is adopted for the 915 nm InGaAsP/GaAsP single-quantum well semiconductor laser using quantum well mixing (QWI) induced by impurity-free vacancy. Both the principle and the process of point defect diffusion are described in detail in this paper. We also studied the effects of annealing temperature, annealing time, and the thickness of SiO 2 film on the quantum well mixing in a semiconductor laser with a primary epitaxial structure, which is distinct from the previous structures. We found that when compared with the complete epitaxial structure, the blue shift of the semiconductor laser with the primary epitaxial structure is larger under the same conditions. To obtain the appropriate blue shift window, the primary epitaxial structure can use a lower annealing temperature and shorter annealing time. In addition, the process is less expensive. We also provide references for upcoming device fabrication.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135850196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-01DOI: 10.1088/1674-4926/44/9/091601
Runxiao Shi, Tengteng Lei, Zhihe Xia, Man Wong
Abstract Here we review two 300 °C metal–oxide (MO) thin-film transistor (TFT) technologies for the implementation of flexible electronic circuits and systems. Fluorination-enhanced TFTs for suppressing the variation and shift of turn-on voltage ( V ON ), and dual-gate TFTs for acquiring sensor signals and modulating V ON have been deployed to improve the robustness and performance of the systems in which they are deployed. Digital circuit building blocks based on fluorinated TFTs have been designed, fabricated, and characterized, which demonstrate the utility of the proposed low-temperature TFT technologies for implementing flexible electronic systems. The construction and characterization of an analog front-end system for the acquisition of bio-potential signals and an active-matrix sensor array for the acquisition of tactile images have been reported recently.
{"title":"Low-temperature metal–oxide thin-film transistor technologies for implementing flexible electronic circuits and systems","authors":"Runxiao Shi, Tengteng Lei, Zhihe Xia, Man Wong","doi":"10.1088/1674-4926/44/9/091601","DOIUrl":"https://doi.org/10.1088/1674-4926/44/9/091601","url":null,"abstract":"Abstract Here we review two 300 °C metal–oxide (MO) thin-film transistor (TFT) technologies for the implementation of flexible electronic circuits and systems. Fluorination-enhanced TFTs for suppressing the variation and shift of turn-on voltage ( V ON ), and dual-gate TFTs for acquiring sensor signals and modulating V ON have been deployed to improve the robustness and performance of the systems in which they are deployed. Digital circuit building blocks based on fluorinated TFTs have been designed, fabricated, and characterized, which demonstrate the utility of the proposed low-temperature TFT technologies for implementing flexible electronic systems. The construction and characterization of an analog front-end system for the acquisition of bio-potential signals and an active-matrix sensor array for the acquisition of tactile images have been reported recently.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135889869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-01DOI: 10.1088/1674-4926/44/9/090101
Hoi-Sing Kwok, Zhiyong Fan
This year marks the tenth anniversary of the State Key Laboratory of Advanced Displays and Optoelectronics Technologies (SKLADOT) at the Hong Kong University of Science and Technology (HKUST). The predecessor of SKLADOT was the Center for Display Research (CDR) which was started in 1995. Thus display research has a long history at HKUST. Display research is necessarily multidisciplinary combining advances in optics and electronics. In the beginning, we concentrated mainly on liquid crystal displays (LCD) and thin film transistors (TFT) research. They were the key technologies responsible for the explosive growth of active matrix high definition liquid crystal displays around the end of the 90’s and at the beginning of the 21st century. Later, areas in organic light emitting diode (OLED) and quantum technologies were added to our repertoire. However, regardless of the mode of light emission or light modulation, TFT remains the backbone of any modern electronic display. TFT provides active matrix control and is essential for high resolution and high contrast ratios. In the beginning, TFTs were made of amorphous silicon (a-Si). Later, polycrystalline silicon was developed. In fact, low temperature polycrystalline silicon (LTPS) and a-Si are still being used in the production of large flat panel displays nowadays. However, it is believed that metal oxide (MO) TFT will eventually replace both of them. It is because MOTFT has a simple and low cost production process as a-Si and high mobility approaching that of LTPS TFT. At SKLADOT, we conduct extensive research on MOTFT. In this special anniversary issue, we have invited past and present members of SKLADOT to present their results on TFT research. Other papers related to semiconductor technologies are also included. The Special Issue starts with a review paper by Runxiao Shi et al. describing the MOTFT technology developed at HKUST[1]. It also describes the numerous applications in flexible TFT based biomedical devices. Feilian Chen et al. review MOTFT made with a novel material ITZO, which promises high mobility[2]. Yanxin Wang et al. report a method to enhance the stability and lifetime of IGZO MOTFT[3]. Stability is the main issue in preventing the widespread deployment of MOTFT. With the demonstration of fluorination providing excellent stability, it is believed that MOTFT will become even more important in the future. As mentioned, besides TFT, there are other areas of semiconductor research being carried out at SKLADOT. These areas include organic light emitting diode (OLED) as well as QLED based on quantum dots. The paper by Bryan Tam et al. describes a new way to produce high resolution OLED using close space sublimation[4]. The paper by Xiangwei Qu and Xiaowei Sun[5], as well as the paper by Depeng Li et al.[6] review and report the development in quantum dot based QLEDs. Another important organic-inorganic hybrid material that is gaining attention is perovskite. It has some interesting prope
{"title":"Preface to Special Issue on Advanced Optoelectronic and Electronic Devices toward Future Displays","authors":"Hoi-Sing Kwok, Zhiyong Fan","doi":"10.1088/1674-4926/44/9/090101","DOIUrl":"https://doi.org/10.1088/1674-4926/44/9/090101","url":null,"abstract":"This year marks the tenth anniversary of the State Key Laboratory of Advanced Displays and Optoelectronics Technologies (SKLADOT) at the Hong Kong University of Science and Technology (HKUST). The predecessor of SKLADOT was the Center for Display Research (CDR) which was started in 1995. Thus display research has a long history at HKUST. Display research is necessarily multidisciplinary combining advances in optics and electronics. In the beginning, we concentrated mainly on liquid crystal displays (LCD) and thin film transistors (TFT) research. They were the key technologies responsible for the explosive growth of active matrix high definition liquid crystal displays around the end of the 90’s and at the beginning of the 21st century. Later, areas in organic light emitting diode (OLED) and quantum technologies were added to our repertoire. However, regardless of the mode of light emission or light modulation, TFT remains the backbone of any modern electronic display. TFT provides active matrix control and is essential for high resolution and high contrast ratios. In the beginning, TFTs were made of amorphous silicon (a-Si). Later, polycrystalline silicon was developed. In fact, low temperature polycrystalline silicon (LTPS) and a-Si are still being used in the production of large flat panel displays nowadays. However, it is believed that metal oxide (MO) TFT will eventually replace both of them. It is because MOTFT has a simple and low cost production process as a-Si and high mobility approaching that of LTPS TFT. At SKLADOT, we conduct extensive research on MOTFT. In this special anniversary issue, we have invited past and present members of SKLADOT to present their results on TFT research. Other papers related to semiconductor technologies are also included. The Special Issue starts with a review paper by Runxiao Shi et al. describing the MOTFT technology developed at HKUST[1]. It also describes the numerous applications in flexible TFT based biomedical devices. Feilian Chen et al. review MOTFT made with a novel material ITZO, which promises high mobility[2]. Yanxin Wang et al. report a method to enhance the stability and lifetime of IGZO MOTFT[3]. Stability is the main issue in preventing the widespread deployment of MOTFT. With the demonstration of fluorination providing excellent stability, it is believed that MOTFT will become even more important in the future. As mentioned, besides TFT, there are other areas of semiconductor research being carried out at SKLADOT. These areas include organic light emitting diode (OLED) as well as QLED based on quantum dots. The paper by Bryan Tam et al. describes a new way to produce high resolution OLED using close space sublimation[4]. The paper by Xiangwei Qu and Xiaowei Sun[5], as well as the paper by Depeng Li et al.[6] review and report the development in quantum dot based QLEDs. Another important organic-inorganic hybrid material that is gaining attention is perovskite. It has some interesting prope","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134994699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-01DOI: 10.1088/1674-4926/44/9/091604
Memoona Qammar, Bosen Zou, Jonathan E. Halpert
Abstract Organic-inorganic halides perovskites (OHPs) have drawn the attention of many researchers owing to their astonishing and unique optoelectronic properties. They have been extensively used for photovoltaic applications, achieving higher than 26% power conversion efficiency to date. These materials have potential to be deployed for many other applications beyond photovoltaics like photodetectors, sensors, light-emitting diodes (LEDs), and resistors. To address the looming challenge of Moore's law and the Von Neumann bottleneck, many new technologies regarding the computation of architectures and storage of information are being extensively researched. Since the discovery of the memristor as a fourth component of the circuit, many materials are explored for memristive applications. Lately, researchers have advanced the exploration of OHPs for memristive applications. These materials possess promising memristive properties and various kinds of halide perovskites have been used for different applications that are not only limited to data storage but expand towards artificial synapses, and neuromorphic computing. Herein we summarize the recent advancements of OHPs for memristive applications, their unique electronic properties, fabrication of materials, and current progress in this field with some future perspectives and outlooks.
{"title":"Organic-inorganic halide perovskites for memristors","authors":"Memoona Qammar, Bosen Zou, Jonathan E. Halpert","doi":"10.1088/1674-4926/44/9/091604","DOIUrl":"https://doi.org/10.1088/1674-4926/44/9/091604","url":null,"abstract":"Abstract Organic-inorganic halides perovskites (OHPs) have drawn the attention of many researchers owing to their astonishing and unique optoelectronic properties. They have been extensively used for photovoltaic applications, achieving higher than 26% power conversion efficiency to date. These materials have potential to be deployed for many other applications beyond photovoltaics like photodetectors, sensors, light-emitting diodes (LEDs), and resistors. To address the looming challenge of Moore's law and the Von Neumann bottleneck, many new technologies regarding the computation of architectures and storage of information are being extensively researched. Since the discovery of the memristor as a fourth component of the circuit, many materials are explored for memristive applications. Lately, researchers have advanced the exploration of OHPs for memristive applications. These materials possess promising memristive properties and various kinds of halide perovskites have been used for different applications that are not only limited to data storage but expand towards artificial synapses, and neuromorphic computing. Herein we summarize the recent advancements of OHPs for memristive applications, their unique electronic properties, fabrication of materials, and current progress in this field with some future perspectives and outlooks.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135889871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-01DOI: 10.1088/1674-4926/44/9/091605
Man Hoi Wong
Abstract β -Ga 2 O 3 Schottky barrier diodes have undergone rapid progress in research and development for power electronic applications. This paper reviews state-of-the-art β -Ga 2 O 3 rectifier technologies, including advanced diode architectures that have enabled lower reverse leakage current via the reduced-surface-field effect. Characteristic device properties including on-resistance, breakdown voltage, rectification ratio, dynamic switching, and nonideal effects are summarized for the different devices. Notable results on the high-temperature resilience of β -Ga 2 O 3 Schottky diodes, together with the enabling thermal packaging solutions, are also presented.
{"title":"A landscape of β-Ga<sub>2</sub>O<sub>3</sub> Schottky power diodes","authors":"Man Hoi Wong","doi":"10.1088/1674-4926/44/9/091605","DOIUrl":"https://doi.org/10.1088/1674-4926/44/9/091605","url":null,"abstract":"Abstract β -Ga 2 O 3 Schottky barrier diodes have undergone rapid progress in research and development for power electronic applications. This paper reviews state-of-the-art β -Ga 2 O 3 rectifier technologies, including advanced diode architectures that have enabled lower reverse leakage current via the reduced-surface-field effect. Characteristic device properties including on-resistance, breakdown voltage, rectification ratio, dynamic switching, and nonideal effects are summarized for the different devices. Notable results on the high-temperature resilience of β -Ga 2 O 3 Schottky diodes, together with the enabling thermal packaging solutions, are also presented.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135889875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Abstract The high-density, vertically aligned retinal neuron array provides effective vision, a feature we aim to replicate with electronic devices. However, the conventional complementary metal-oxide-semiconductor (CMOS) image sensor, based on separate designs for sensing, memory, and processing units, limits its integration density. Moreover, redundant signal communication significantly increases energy consumption. Current neuromorphic devices integrating sensing and signal processing show promise in various computer vision applications, but there is still a need for frame-based imaging with good compatibility. In this study, we developed a dual-mode image sensor based on a high-density all-inorganic perovskite nanowire array. The device can switch between frame-based standard imaging mode and neuromorphic imaging mode by applying different biases. This unique bias-dependent photo response is based on a well-designed energy band diagram. The biomimetic alignment of nanowires ensures the potential for high-resolution imaging. To further demonstrate the imaging ability, we conducted pattern reconstruction in both modes with a 10 × 10 crossbar device. This study introduces a novel image sensor with high compatibility and efficiency, suitable for various applications including computer vision, surveillance, and robotics.
{"title":"A dual-mode image sensor using an all-inorganic perovskite nanowire array for standard and neuromorphic imaging","authors":"Zhenghao Long, Yucheng Ding, Xiao Qiu, Yu Zhou, Shivam Kumar, Zhiyong Fan","doi":"10.1088/1674-4926/44/9/092604","DOIUrl":"https://doi.org/10.1088/1674-4926/44/9/092604","url":null,"abstract":"Abstract The high-density, vertically aligned retinal neuron array provides effective vision, a feature we aim to replicate with electronic devices. However, the conventional complementary metal-oxide-semiconductor (CMOS) image sensor, based on separate designs for sensing, memory, and processing units, limits its integration density. Moreover, redundant signal communication significantly increases energy consumption. Current neuromorphic devices integrating sensing and signal processing show promise in various computer vision applications, but there is still a need for frame-based imaging with good compatibility. In this study, we developed a dual-mode image sensor based on a high-density all-inorganic perovskite nanowire array. The device can switch between frame-based standard imaging mode and neuromorphic imaging mode by applying different biases. This unique bias-dependent photo response is based on a well-designed energy band diagram. The biomimetic alignment of nanowires ensures the potential for high-resolution imaging. To further demonstrate the imaging ability, we conducted pattern reconstruction in both modes with a 10 × 10 crossbar device. This study introduces a novel image sensor with high compatibility and efficiency, suitable for various applications including computer vision, surveillance, and robotics.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135891233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-01DOI: 10.1088/1674-4926/44/9/092605
Wanlong Zhang, Julian Schneider, Maksym F. Prodanov, Valerii V. Vashchenko, Andrey L. Rogach, Xiaocong Yuan, Abhishek K. Srivastava
Abstract The anisotropic absorption and emission from semiconductor CdSe/CdS quantum rods (QRs) provide extra benefits among other photoluminescence nanocrystals. Using photo-induced alignment technique, the QRs can be oriented in liquid crystal polymer matrix at a large scale. In this article, a 2D Dammann grating pattern, within “SKL” characters domains aligned QRs in composite film, was fabricated by multi-step photo exposure using several photo masks, and a continuous geometric lens profile pattern aligned QRs was realized by the single step polarization converting holographic irradiation method. Both polarized optical microscope and fluorescence microscope are employed to determine the liquid crystal director profiles and QRs anisotropic excitation properties. We have been able to orient the QRs in fine binary and continuous patterns that confirms the strong quantum rod aligning ability of the proposed method. Thus, the proposed approach paves a way for photo-induced flexible QRs alignments to provide a highly specific and difficult-to-replicate security application at a large scale.
{"title":"Photo-induced flexible semiconductor CdSe/CdS quantum rods alignment","authors":"Wanlong Zhang, Julian Schneider, Maksym F. Prodanov, Valerii V. Vashchenko, Andrey L. Rogach, Xiaocong Yuan, Abhishek K. Srivastava","doi":"10.1088/1674-4926/44/9/092605","DOIUrl":"https://doi.org/10.1088/1674-4926/44/9/092605","url":null,"abstract":"Abstract The anisotropic absorption and emission from semiconductor CdSe/CdS quantum rods (QRs) provide extra benefits among other photoluminescence nanocrystals. Using photo-induced alignment technique, the QRs can be oriented in liquid crystal polymer matrix at a large scale. In this article, a 2D Dammann grating pattern, within “SKL” characters domains aligned QRs in composite film, was fabricated by multi-step photo exposure using several photo masks, and a continuous geometric lens profile pattern aligned QRs was realized by the single step polarization converting holographic irradiation method. Both polarized optical microscope and fluorescence microscope are employed to determine the liquid crystal director profiles and QRs anisotropic excitation properties. We have been able to orient the QRs in fine binary and continuous patterns that confirms the strong quantum rod aligning ability of the proposed method. Thus, the proposed approach paves a way for photo-induced flexible QRs alignments to provide a highly specific and difficult-to-replicate security application at a large scale.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"351 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135891231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Abstract Indium-tin-zinc oxide (ITZO) thin-film transistor (TFT) technology holds promise for achieving high mobility and offers significant opportunities for commercialization. This paper provides a review of progress made in improving the mobility of ITZO TFTs. This paper begins by describing the development and current status of metal-oxide TFTs, and then goes on to explain the advantages of selecting ITZO as the TFT channel layer. The evaluation criteria for TFTs are subsequently introduced, and the reasons and significance of enhancing mobility are clarified. This paper then explores the development of high-mobility ITZO TFTs from five perspectives: active layer optimization, gate dielectric optimization, electrode optimization, interface optimization, and device structure optimization. Finally, a summary and outlook of the research field are presented.
{"title":"Advances in mobility enhancement of ITZO thin-film transistors: a review","authors":"Feilian Chen, Meng Zhang, Yunhao Wan, Xindi Xu, Man Wong, Hoi-Sing Kwok","doi":"10.1088/1674-4926/44/9/091602","DOIUrl":"https://doi.org/10.1088/1674-4926/44/9/091602","url":null,"abstract":"Abstract Indium-tin-zinc oxide (ITZO) thin-film transistor (TFT) technology holds promise for achieving high mobility and offers significant opportunities for commercialization. This paper provides a review of progress made in improving the mobility of ITZO TFTs. This paper begins by describing the development and current status of metal-oxide TFTs, and then goes on to explain the advantages of selecting ITZO as the TFT channel layer. The evaluation criteria for TFTs are subsequently introduced, and the reasons and significance of enhancing mobility are clarified. This paper then explores the development of high-mobility ITZO TFTs from five perspectives: active layer optimization, gate dielectric optimization, electrode optimization, interface optimization, and device structure optimization. Finally, a summary and outlook of the research field are presented.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135889867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-01DOI: 10.1088/1674-4926/44/9/092601
Yanxin Wang, Jiye Li, Fayang Liu, Dongxiang Luo, Yunping Wang, Shengdong Zhang, Lei Lu
Abstract As growing applications demand higher driving currents of oxide semiconductor thin-film transistors (TFTs), severe instabilities and even hard breakdown under high-current stress (HCS) become critical challenges. In this work, the triggering voltage of HCS-induced self-heating (SH) degradation is defined in the output characteristics of amorphous indium-gallium-zinc oxide (a-IGZO) TFTs, and used to quantitatively evaluate the thermal generation process of channel donor defects. The fluorinated a-IGZO (a-IGZO:F) was adopted to effectively retard the triggering of the self-heating (SH) effect, and was supposed to originate from the less population of initial deep-state defects and a slower rate of thermal defect transition in a-IGZO:F. The proposed scheme noticeably enhances the high-current applications of oxide TFTs.
{"title":"Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors","authors":"Yanxin Wang, Jiye Li, Fayang Liu, Dongxiang Luo, Yunping Wang, Shengdong Zhang, Lei Lu","doi":"10.1088/1674-4926/44/9/092601","DOIUrl":"https://doi.org/10.1088/1674-4926/44/9/092601","url":null,"abstract":"Abstract As growing applications demand higher driving currents of oxide semiconductor thin-film transistors (TFTs), severe instabilities and even hard breakdown under high-current stress (HCS) become critical challenges. In this work, the triggering voltage of HCS-induced self-heating (SH) degradation is defined in the output characteristics of amorphous indium-gallium-zinc oxide (a-IGZO) TFTs, and used to quantitatively evaluate the thermal generation process of channel donor defects. The fluorinated a-IGZO (a-IGZO:F) was adopted to effectively retard the triggering of the self-heating (SH) effect, and was supposed to originate from the less population of initial deep-state defects and a slower rate of thermal defect transition in a-IGZO:F. The proposed scheme noticeably enhances the high-current applications of oxide TFTs.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135889874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-01DOI: 10.1088/1674-4926/44/9/092603
Depeng Li, Jingrui Ma, Wenbo Liu, Guohong Xiang, Xiangwei Qu, Siqi Jia, Mi Gu, Jiahao Wei, Pai Liu, Kai Wang, Xiaowei Sun
Abstract The performance of inverted quantum-dot light-emitting diodes (QLEDs) based on solution-processed hole transport layers (HTLs) has been limited by the solvent-induced damage to the quantum dot (QD) layer during the spin-coating of the HTL. The lack of compatibility between the HTL's solvent and the QD layer results in an uneven surface, which negatively impacts the overall device performance. In this work, we develop a novel method to solve this problem by modifying the QD film with 1,8-diaminooctane to improve the resistance of the QD layer for the HTL’s solvent. The uniform QD layer leads the inverted red QLED device to achieve a low turn-on voltage of 1.8 V, a high maximum luminance of 105 500 cd/m 2 , and a remarkable maximum external quantum efficiency of 13.34%. This approach releases the considerable potential of HTL materials selection and offers a promising avenue for the development of high-performance inverted QLEDs.
{"title":"Enhancing performance of inverted quantum-dot light-emitting diodes based on a solution-processed hole transport layer via ligand treatment","authors":"Depeng Li, Jingrui Ma, Wenbo Liu, Guohong Xiang, Xiangwei Qu, Siqi Jia, Mi Gu, Jiahao Wei, Pai Liu, Kai Wang, Xiaowei Sun","doi":"10.1088/1674-4926/44/9/092603","DOIUrl":"https://doi.org/10.1088/1674-4926/44/9/092603","url":null,"abstract":"Abstract The performance of inverted quantum-dot light-emitting diodes (QLEDs) based on solution-processed hole transport layers (HTLs) has been limited by the solvent-induced damage to the quantum dot (QD) layer during the spin-coating of the HTL. The lack of compatibility between the HTL's solvent and the QD layer results in an uneven surface, which negatively impacts the overall device performance. In this work, we develop a novel method to solve this problem by modifying the QD film with 1,8-diaminooctane to improve the resistance of the QD layer for the HTL’s solvent. The uniform QD layer leads the inverted red QLED device to achieve a low turn-on voltage of 1.8 V, a high maximum luminance of 105 500 cd/m 2 , and a remarkable maximum external quantum efficiency of 13.34%. This approach releases the considerable potential of HTL materials selection and offers a promising avenue for the development of high-performance inverted QLEDs.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135891232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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