Pub Date : 2023-10-01DOI: 10.1088/1674-4926/44/10/102401
Min Liu, Ziteng Cai, Jian Liu, Nanjian Wu, Liyuan Liu
Abstract This paper describes a promising route for the exploration and development of 3.0 THz sensing and imaging with FET-based power detectors in a standard 65 nm CMOS process. Based on the plasma-wave theory proposed by Dyakonov and Shur, we designed high-responsivity and low-noise multiple detectors for monitoring a pulse-mode 3.0 THz quantum cascade laser (QCL). Furthermore, we present a fully integrated high-speed 32 × 32-pixel 3.0 THz CMOS image sensor (CIS). The full CIS measures 2.81 × 5.39 mm 2 and achieves a 423 V/W responsivity (Rv) and a 5.3 nW integral noise equivalent power (NEP) at room temperature. In experiments, we demonstrate a testing speed reaching 319 fps under continuous-wave (CW) illumination of a 3.0 THz QCL. The results indicate that our terahertz CIS has excellent potential in cost-effective and commercial THz imaging and material detection.
{"title":"Exploration of high-speed 3.0 THz imaging with a 65 nm CMOS process","authors":"Min Liu, Ziteng Cai, Jian Liu, Nanjian Wu, Liyuan Liu","doi":"10.1088/1674-4926/44/10/102401","DOIUrl":"https://doi.org/10.1088/1674-4926/44/10/102401","url":null,"abstract":"Abstract This paper describes a promising route for the exploration and development of 3.0 THz sensing and imaging with FET-based power detectors in a standard 65 nm CMOS process. Based on the plasma-wave theory proposed by Dyakonov and Shur, we designed high-responsivity and low-noise multiple detectors for monitoring a pulse-mode 3.0 THz quantum cascade laser (QCL). Furthermore, we present a fully integrated high-speed 32 × 32-pixel 3.0 THz CMOS image sensor (CIS). The full CIS measures 2.81 × 5.39 mm 2 and achieves a 423 V/W responsivity (Rv) and a 5.3 nW integral noise equivalent power (NEP) at room temperature. In experiments, we demonstrate a testing speed reaching 319 fps under continuous-wave (CW) illumination of a 3.0 THz QCL. The results indicate that our terahertz CIS has excellent potential in cost-effective and commercial THz imaging and material detection.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135849823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-01DOI: 10.1088/1674-4926/44/10/102402
Lu Tang, Yi Chen, Kui Wang
Abstract An 80-GHz DCO based on modified hybrid tuning banks is introduced in this paper. To achieve sub-MHz frequency resolution with reduced circuit complexity, the improved circuit topology replaces the conventional circuit topology with two binary-weighted SC cells, enabling eight SC-cell-based improved SC ladders to achieve the same fine-tuning steps as twelve SC-cell-based conventional SC ladders. To achieve lower phase noise and smaller chip size, the promoted binary-weighted digitally controlled transmission lines (DCTLs) are used to implement the coarse and medium tuning banks of the DCO. Compared to the conventional thermometer-coded DCTLs, control bits of the proposed DCTLs are reduced from 30 to 8, and the total length is reduced by 34.3% (from 122.76 to 80.66 μ m). Fabricated in 40-nm CMOS, the DCO demonstrated in this work features a small fine-tuning step (483 kHz), a high oscillation frequency (79–85 GHz), and a smaller chip size (0.017 mm 2 ). Compared to previous work, the modified DCO exhibits an excellent figure of merit with an area (FoM A ) of –198 dBc/Hz.
{"title":"An 80-GHz DCO utilizing improved SC ladder and promoted DCTL-based hybrid tuning banks","authors":"Lu Tang, Yi Chen, Kui Wang","doi":"10.1088/1674-4926/44/10/102402","DOIUrl":"https://doi.org/10.1088/1674-4926/44/10/102402","url":null,"abstract":"Abstract An 80-GHz DCO based on modified hybrid tuning banks is introduced in this paper. To achieve sub-MHz frequency resolution with reduced circuit complexity, the improved circuit topology replaces the conventional circuit topology with two binary-weighted SC cells, enabling eight SC-cell-based improved SC ladders to achieve the same fine-tuning steps as twelve SC-cell-based conventional SC ladders. To achieve lower phase noise and smaller chip size, the promoted binary-weighted digitally controlled transmission lines (DCTLs) are used to implement the coarse and medium tuning banks of the DCO. Compared to the conventional thermometer-coded DCTLs, control bits of the proposed DCTLs are reduced from 30 to 8, and the total length is reduced by 34.3% (from 122.76 to 80.66 μ m). Fabricated in 40-nm CMOS, the DCO demonstrated in this work features a small fine-tuning step (483 kHz), a high oscillation frequency (79–85 GHz), and a smaller chip size (0.017 mm 2 ). Compared to previous work, the modified DCO exhibits an excellent figure of merit with an area (FoM A ) of –198 dBc/Hz.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135849975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Abstract For the measurement of responsivity of an infrared photodetector, the most-used radiation source is a blackbody. In such a measurement system, distance between the blackbody, the photodetector and the aperture diameter are two parameters that contribute most measurement errors. In this work, we describe the configuration of our responsivity measurement system in great detail and present a method to calibrate the distance and aperture diameter. The core of this calibration method is to transfer direct measurements of these two parameters into an extraction procedure by fitting the experiment data to the calculated results. The calibration method is proved experimentally with a commercially extended InGaAs detector at a wide range of blackbody temperature, aperture diameter and distance. Then proof procedures are further extended into a detector fabricated in our laboratory and consistent results were obtained.
{"title":"The measurement of responsivity of infrared photodetectors using a cavity blackbody","authors":"Nong Li, Dongwei Jiang, Guowei Wang, Weiqiang Chen, Wenguang Zhou, Junkai Jiang, Faran Chang, Hongyue Hao, Donghai Wu, Yingqiang Xu, Guiying Shen, Hui Xie, Jingming Liu, Youwen Zhao, Fenghua Wang, Zhichuan Niu","doi":"10.1088/1674-4926/44/10/102301","DOIUrl":"https://doi.org/10.1088/1674-4926/44/10/102301","url":null,"abstract":"Abstract For the measurement of responsivity of an infrared photodetector, the most-used radiation source is a blackbody. In such a measurement system, distance between the blackbody, the photodetector and the aperture diameter are two parameters that contribute most measurement errors. In this work, we describe the configuration of our responsivity measurement system in great detail and present a method to calibrate the distance and aperture diameter. The core of this calibration method is to transfer direct measurements of these two parameters into an extraction procedure by fitting the experiment data to the calculated results. The calibration method is proved experimentally with a commercially extended InGaAs detector at a wide range of blackbody temperature, aperture diameter and distance. Then proof procedures are further extended into a detector fabricated in our laboratory and consistent results were obtained.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135849851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-01DOI: 10.1088/1674-4926/44/10/104101
Chenxu Wu, Yibai Xue, Han Bao, Ling Yang, Jiancong Li, Jing Tian, Shengguang Ren, Yi Li, Xiangshui Miao
Abstract Sparse coding is a prevalent method for image inpainting and feature extraction, which can repair corrupted images or improve data processing efficiency, and has numerous applications in computer vision and signal processing. Recently, several memristor-based in-memory computing systems have been proposed to enhance the efficiency of sparse coding remarkably. However, the variations and low precision of the devices will deteriorate the dictionary, causing inevitable degradation in the accuracy and reliability of the application. In this work, a digital-analog hybrid memristive sparse coding system is proposed utilizing a multilevel Pt/Al 2 O 3 /AlO x /W memristor, which employs the forward stagewise regression algorithm: The approximate cosine distance calculation is conducted in the analog part to speed up the computation, followed by high-precision coefficient updates performed in the digital portion. We determine that four states of the aforementioned memristor are sufficient for the processing of natural images. Furthermore, through dynamic adjustment of the mapping ratio, the precision requirement for the digit-to-analog converters can be reduced to 4 bits. Compared to the previous system, our system achieves higher image reconstruction quality of the 38 dB peak-signal-to-noise ratio. Moreover, in the context of image inpainting, images containing 50% missing pixels can be restored with a reconstruction error of 0.0424 root-mean-squared error.
稀疏编码是一种流行的图像修复和特征提取方法，它可以修复损坏的图像或提高数据处理效率，在计算机视觉和信号处理中有着广泛的应用。近年来，人们提出了几种基于忆阻器的内存计算系统，以显著提高稀疏编码的效率。然而，设备的变化和低精度会使词典恶化，导致应用的准确性和可靠性不可避免地下降。本文利用多电平Pt/Al 2 O 3 /AlO x /W忆阻器，提出了一种数模混合忆阻稀疏编码系统，该系统采用前向逐级回归算法:在模拟部分进行近似余弦距离计算以加快计算速度，然后在数字部分进行高精度系数更新。我们确定上述记忆电阻器的四种状态足以处理自然图像。此外，通过动态调整映射比，可以将数模转换器的精度要求降低到4位。与之前的系统相比，我们的系统在38 dB的峰值信噪比下实现了更高的图像重建质量。此外，在图像补漆的情况下，含有50%缺失像素的图像可以被恢复，重建误差为0.0424均方根误差。
{"title":"Forward stagewise regression with multilevel memristor for sparse coding","authors":"Chenxu Wu, Yibai Xue, Han Bao, Ling Yang, Jiancong Li, Jing Tian, Shengguang Ren, Yi Li, Xiangshui Miao","doi":"10.1088/1674-4926/44/10/104101","DOIUrl":"https://doi.org/10.1088/1674-4926/44/10/104101","url":null,"abstract":"Abstract Sparse coding is a prevalent method for image inpainting and feature extraction, which can repair corrupted images or improve data processing efficiency, and has numerous applications in computer vision and signal processing. Recently, several memristor-based in-memory computing systems have been proposed to enhance the efficiency of sparse coding remarkably. However, the variations and low precision of the devices will deteriorate the dictionary, causing inevitable degradation in the accuracy and reliability of the application. In this work, a digital-analog hybrid memristive sparse coding system is proposed utilizing a multilevel Pt/Al 2 O 3 /AlO x /W memristor, which employs the forward stagewise regression algorithm: The approximate cosine distance calculation is conducted in the analog part to speed up the computation, followed by high-precision coefficient updates performed in the digital portion. We determine that four states of the aforementioned memristor are sufficient for the processing of natural images. Furthermore, through dynamic adjustment of the mapping ratio, the precision requirement for the digit-to-analog converters can be reduced to 4 bits. Compared to the previous system, our system achieves higher image reconstruction quality of the 38 dB peak-signal-to-noise ratio. Moreover, in the context of image inpainting, images containing 50% missing pixels can be restored with a reconstruction error of 0.0424 root-mean-squared error.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"149 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135850199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-01DOI: 10.1088/1674-4926/44/10/100201
Mengjia Li, Zuolin Zhang, Jie Sun, Fan Liu, Jiangzhao Chen, Liming Ding, Cong Chen
cells
{"title":"Perovskite solar cells with NiO<sub>x</sub> hole-transport layer","authors":"Mengjia Li, Zuolin Zhang, Jie Sun, Fan Liu, Jiangzhao Chen, Liming Ding, Cong Chen","doi":"10.1088/1674-4926/44/10/100201","DOIUrl":"https://doi.org/10.1088/1674-4926/44/10/100201","url":null,"abstract":"cells","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135849489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-01DOI: 10.1088/1674-4926/44/10/100401
Qilin Hua, Guozhen Shen
Sweat diagnostics are being developed to provide insights into monitoring human health status using an accessi-bly non-invasive technique of sweat analysis [1-3] . Abundant compositions, ranging from electrolytes and metabolites to large proteins, can be found in sweat, which have similar types of physiological biomarkers observed in the blood [1] . Recent advances in flexible electronics [4-7] have transformed conventional laboratory tests into personalized sweat molecular analysis that facilitates real-time sensing of target biomarkers [3] . Previous works have shown the simultaneous and selective sensing capabilities of electrolytes (e.g., sodium (Na + ), potassium (K + ), ammonium (NH 4+ ), and chloride (Cl − ) ions) [8] and metabolites (e.g., alcohols, lactate, uric acid, and glucose) [9] by designing fully integrated wearable sensor arrays [8, 10] .
{"title":"A wearable sweat patch for non-invasive and wireless monitoring inflammatory status","authors":"Qilin Hua, Guozhen Shen","doi":"10.1088/1674-4926/44/10/100401","DOIUrl":"https://doi.org/10.1088/1674-4926/44/10/100401","url":null,"abstract":"Sweat diagnostics are being developed to provide insights into monitoring human health status using an accessi-bly non-invasive technique of sweat analysis [1-3] . Abundant compositions, ranging from electrolytes and metabolites to large proteins, can be found in sweat, which have similar types of physiological biomarkers observed in the blood [1] . Recent advances in flexible electronics [4-7] have transformed conventional laboratory tests into personalized sweat molecular analysis that facilitates real-time sensing of target biomarkers [3] . Previous works have shown the simultaneous and selective sensing capabilities of electrolytes (e.g., sodium (Na + ), potassium (K + ), ammonium (NH 4+ ), and chloride (Cl − ) ions) [8] and metabolites (e.g., alcohols, lactate, uric acid, and glucose) [9] by designing fully integrated wearable sensor arrays [8, 10] .","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135849972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-01DOI: 10.1088/1674-4926/44/10/102001
Talia Tene, Marco Guevara, Gabriela Tubon-Usca, Oswaldo Villacrés Cáceres, Gabriel Moreano, Cristian Vacacela Gomez, Stefano Bellucci
Abstract Germanene nanostrips (GeNSs) have garnered significant attention in modern semiconductor technology due to their exceptional physical characteristics, positioning them as promising candidates for a wide range of applications. GeNSs exhibit a two-dimensional (buckled) honeycomb-like lattice, which is similar to germanene but with controllable bandgaps. The modeling of GeNSs is essential for developing appropriate synthesis methods as it enables understanding and controlling the growth process of these systems. Indeed, one can adjust the strip width, which in turn can tune the bandgap and plasmonic response of the material to meet specific device requirements. In this study, the objective is to investigate the electronic behavior and THz plasmon features of GeNSs (≥100 nm wide). A semi-analytical model based on the charge-carrier velocity of freestanding germanene is utilized for this purpose. The charge-carrier velocity of freestanding germanene is determined through the GW approximation ( m·s −1 ). Within the width range of 100 to 500 nm, GeNSs exhibit narrow bandgaps, typically measuring only a few meV. Specifically, upon analysis, it was found that the bandgaps of the investigated GeNSs ranged between 29 and 6 meV. As well, these nanostrips exhibit -like plasmon dispersions, with their connected plasmonic frequency (≤30 THz) capable of being manipulated by varying parameters such as strip width, excitation plasmon angle, and sample quality. These manipulations can lead to frequency variations, either increasing or decreasing, as well as shifts towards larger momentum values. The outcomes of our study serve as a foundational motivation for future experiments, and further confirmation is needed to validate the reported results.
{"title":"THz plasmonics and electronics in germanene nanostrips","authors":"Talia Tene, Marco Guevara, Gabriela Tubon-Usca, Oswaldo Villacrés Cáceres, Gabriel Moreano, Cristian Vacacela Gomez, Stefano Bellucci","doi":"10.1088/1674-4926/44/10/102001","DOIUrl":"https://doi.org/10.1088/1674-4926/44/10/102001","url":null,"abstract":"Abstract Germanene nanostrips (GeNSs) have garnered significant attention in modern semiconductor technology due to their exceptional physical characteristics, positioning them as promising candidates for a wide range of applications. GeNSs exhibit a two-dimensional (buckled) honeycomb-like lattice, which is similar to germanene but with controllable bandgaps. The modeling of GeNSs is essential for developing appropriate synthesis methods as it enables understanding and controlling the growth process of these systems. Indeed, one can adjust the strip width, which in turn can tune the bandgap and plasmonic response of the material to meet specific device requirements. In this study, the objective is to investigate the electronic behavior and THz plasmon features of GeNSs (≥100 nm wide). A semi-analytical model based on the charge-carrier velocity of freestanding germanene is utilized for this purpose. The charge-carrier velocity of freestanding germanene is determined through the GW approximation ( <?CDATA ${v}_{mathrm{F}}=0.702 times {10}^{6} $?> m·s −1 ). Within the width range of 100 to 500 nm, GeNSs exhibit narrow bandgaps, typically measuring only a few meV. Specifically, upon analysis, it was found that the bandgaps of the investigated GeNSs ranged between 29 and 6 meV. As well, these nanostrips exhibit <?CDATA $ sqrt{q} $?> -like plasmon dispersions, with their connected plasmonic frequency (≤30 THz) capable of being manipulated by varying parameters such as strip width, excitation plasmon angle, and sample quality. These manipulations can lead to frequency variations, either increasing or decreasing, as well as shifts towards larger momentum values. The outcomes of our study serve as a foundational motivation for future experiments, and further confirmation is needed to validate the reported results.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135921935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-01DOI: 10.1088/1674-4926/44/10/102101
Chunbao Feng, Changhe Wu, Xin Luo, Tao Hu, Fanchuan Chen, Shichang Li, Shengnan Duan, Wenjie Hou, Dengfeng Li, Gang Tang, Gang Zhang
Abstract Hydrostatic pressure provides an efficient way to tune and optimize the properties of solid materials without changing their composition. In this work, we investigate the electronic, optical, and mechanical properties of antiperovskite X 3 NP (X 2+ = Ca, Mg) upon compression by first-principles calculations. Our results reveal that the system is anisotropic, and the lattice constant a of X 3 NP exhibits the fastest rate of decrease upon compression among the three directions, which is different from the typical Pnma phase of halide and chalcogenide perovskites. Meanwhile, Ca 3 NP has higher compressibility than Mg 3 NP due to its small bulk modulus. The electronic and optical properties of Mg 3 NP show small fluctuations upon compression, but those of Ca 3 NP are more sensitive to pressure due to its higher compressibility and lower unoccupied 3 d orbital energy. For example, the band gap, lattice dielectric constant, and exciton binding energy of Ca 3 NP decrease rapidly as the pressure increases. In addition, the increase in pressure significantly improves the optical absorption and theoretical conversion efficiency of Ca 3 NP. Finally, the mechanical properties of X 3 NP are also increased upon compression due to the reduction in bond length, while inducing a brittle-to-ductile transition. Our research provides theoretical guidance and insights for future experimental tuning of the physical properties of antiperovskite semiconductors by pressure.
{"title":"Pressure-dependent electronic, optical, and mechanical properties of antiperovskite X<sub>3</sub>NP (X = Ca, Mg): A first-principles study","authors":"Chunbao Feng, Changhe Wu, Xin Luo, Tao Hu, Fanchuan Chen, Shichang Li, Shengnan Duan, Wenjie Hou, Dengfeng Li, Gang Tang, Gang Zhang","doi":"10.1088/1674-4926/44/10/102101","DOIUrl":"https://doi.org/10.1088/1674-4926/44/10/102101","url":null,"abstract":"Abstract Hydrostatic pressure provides an efficient way to tune and optimize the properties of solid materials without changing their composition. In this work, we investigate the electronic, optical, and mechanical properties of antiperovskite X 3 NP (X 2+ = Ca, Mg) upon compression by first-principles calculations. Our results reveal that the system is anisotropic, and the lattice constant a of X 3 NP exhibits the fastest rate of decrease upon compression among the three directions, which is different from the typical Pnma phase of halide and chalcogenide perovskites. Meanwhile, Ca 3 NP has higher compressibility than Mg 3 NP due to its small bulk modulus. The electronic and optical properties of Mg 3 NP show small fluctuations upon compression, but those of Ca 3 NP are more sensitive to pressure due to its higher compressibility and lower unoccupied 3 d orbital energy. For example, the band gap, lattice dielectric constant, and exciton binding energy of Ca 3 NP decrease rapidly as the pressure increases. In addition, the increase in pressure significantly improves the optical absorption and theoretical conversion efficiency of Ca 3 NP. Finally, the mechanical properties of X 3 NP are also increased upon compression due to the reduction in bond length, while inducing a brittle-to-ductile transition. Our research provides theoretical guidance and insights for future experimental tuning of the physical properties of antiperovskite semiconductors by pressure.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135849974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-01DOI: 10.1088/1674-4926/44/10/103101
Swagata Samanta
Abstract This review article discusses the development of gallium arsenide (GaAs)-based resonant tunneling diodes (RTD) since the 1970s. To the best of my knowledge, this article is the first review of GaAs RTD technology which covers different epitaxial-structure design, fabrication techniques, and characterizations for various application areas. It is expected that the details presented here will help the readers to gain a perspective on the previous accomplishments, as well as have an outlook on the current trends and future developments in GaAs RTD research.
{"title":"GaAs-based resonant tunneling diode: Device aspects from design, manufacturing, characterization and applications","authors":"Swagata Samanta","doi":"10.1088/1674-4926/44/10/103101","DOIUrl":"https://doi.org/10.1088/1674-4926/44/10/103101","url":null,"abstract":"Abstract This review article discusses the development of gallium arsenide (GaAs)-based resonant tunneling diodes (RTD) since the 1970s. To the best of my knowledge, this article is the first review of GaAs RTD technology which covers different epitaxial-structure design, fabrication techniques, and characterizations for various application areas. It is expected that the details presented here will help the readers to gain a perspective on the previous accomplishments, as well as have an outlook on the current trends and future developments in GaAs RTD research.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135850470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-01DOI: 10.1088/1674-4926/44/10/101301
Zejie Yu, He Gao, Yi Wang, Yue Yu, Hon Ki Tsang, Xiankai Sun, Daoxin Dai
Abstract Photonic waveguides are the most fundamental element for photonic integrated circuits (PICs). Waveguide properties, such as propagation loss, modal areas, nonlinear coefficients, etc., directly determine the functionalities and performance of PICs. Recently, the emerging waveguides with bound states in the continuum (BICs) have opened new opportunities for PICs because of their special properties in resonance and radiation. Here, we review the recent progress of PICs composed of waveguides with BICs. First, fundamentals including background physics and design rules of a BIC-based waveguide will be introduced. Next, two types of BIC-based waveguide structures, including shallowly etched dielectric and hybrid waveguides, will be presented. Lastly, the challenges and opportunities of PICs with BICs will be discussed.
{"title":"Fundamentals and applications of photonic waveguides with bound states in the continuum","authors":"Zejie Yu, He Gao, Yi Wang, Yue Yu, Hon Ki Tsang, Xiankai Sun, Daoxin Dai","doi":"10.1088/1674-4926/44/10/101301","DOIUrl":"https://doi.org/10.1088/1674-4926/44/10/101301","url":null,"abstract":"Abstract Photonic waveguides are the most fundamental element for photonic integrated circuits (PICs). Waveguide properties, such as propagation loss, modal areas, nonlinear coefficients, etc., directly determine the functionalities and performance of PICs. Recently, the emerging waveguides with bound states in the continuum (BICs) have opened new opportunities for PICs because of their special properties in resonance and radiation. Here, we review the recent progress of PICs composed of waveguides with BICs. First, fundamentals including background physics and design rules of a BIC-based waveguide will be introduced. Next, two types of BIC-based waveguide structures, including shallowly etched dielectric and hybrid waveguides, will be presented. Lastly, the challenges and opportunities of PICs with BICs will be discussed.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"09 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135849978","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：