The paper reports on top-down nanofabricated Ni3Si2 nanowires and tests of their electron field emission capabilities. The results include low turn on electric field, EON, moderate work function, , and the field enhancement factor, customizable through nanofabrication. The paper also reports on the issues ahead in the field of nanowires-based electron mission, as there are quantitative limitations of the applicability of the FowlerNordheim model, which will become increasingly apparent as we continue to optimize field emission of electrons. To this end, we suggest adding the studies of surface-to-volume ratio effects of the nanowires as another standard for comparison, in order to lead to the input form of the density of states as quantum effects becoming more prominent. a) Electronic mail: aisakovic@colgate.edu and iregx137@gmail.com
{"title":"Ni3Si2 nanowires for efficient electron field emission and limitations of the Fowler–Nordheim model","authors":"A. Belkadi, Emma Zeng, A. Isakovic","doi":"10.1116/6.0001248","DOIUrl":"https://doi.org/10.1116/6.0001248","url":null,"abstract":"The paper reports on top-down nanofabricated Ni3Si2 nanowires and tests of their electron field emission capabilities. The results include low turn on electric field, EON, moderate work function, , and the field enhancement factor, customizable through nanofabrication. The paper also reports on the issues ahead in the field of nanowires-based electron mission, as there are quantitative limitations of the applicability of the FowlerNordheim model, which will become increasingly apparent as we continue to optimize field emission of electrons. To this end, we suggest adding the studies of surface-to-volume ratio effects of the nanowires as another standard for comparison, in order to lead to the input form of the density of states as quantum effects becoming more prominent. a) Electronic mail: aisakovic@colgate.edu and iregx137@gmail.com","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"60 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82698816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. C. Brockway, D. J. Moritz, J. Borkowski, J. Skinner
{"title":"Mixed mathematical and experimental modeling of electrospun metal oxide supercapacitor electrodes","authors":"M. C. Brockway, D. J. Moritz, J. Borkowski, J. Skinner","doi":"10.1116/6.0001276","DOIUrl":"https://doi.org/10.1116/6.0001276","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"162 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74965066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Review of synthesis and sensing applications of anisotropic silver and gold nanostructures","authors":"H. Hegde, S. Chidangil, Rajeev Kumar Sinha","doi":"10.1116/6.0001292","DOIUrl":"https://doi.org/10.1116/6.0001292","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"9 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85804713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Amitabha Nath, B. Mahajan, A. Mondal, L. R. Singh, M. Sarkar
{"title":"Synthesis and detailed characterizations of Ag nanoparticles coated In2O3 nanostructured devices: An analytical and experimental approach","authors":"Amitabha Nath, B. Mahajan, A. Mondal, L. R. Singh, M. Sarkar","doi":"10.1116/6.0001208","DOIUrl":"https://doi.org/10.1116/6.0001208","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"34 ","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72539699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Selective dry etching of UV-nanoimprinted resin passivation masks for area selective atomic layer deposition of aluminum oxide","authors":"Chiaki Miyajima, Shunya Ito, M. Nakagawa","doi":"10.1116/6.0001250","DOIUrl":"https://doi.org/10.1116/6.0001250","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"27 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84236966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Threshold switching (TS) and negative differential resistance (NDR) characteristic of niobium oxide (NbOx) films have been actively studied for neuromorphic computing. Generally, the electroforming process is required for TS and NDR in NbOx films. However, different electroforming and TS properties have been reported for NbOx films with different crystallinities or chemical compositions. This study investigates the effect of thermal annealing on the microstructures of NbOx films and compares the electroforming, TS, and NDR characteristics of amorphous, partially crystallized, and fully crystallized films. The distributions of crystalline NbO2 phase in NbOx films annealed at various temperatures were analyzed using transmission electron microscopy dark-field imaging, and it was observed that the distribution of crystalline NbO2 phase influenced the electroforming process. Moreover, TS characteristics improved in the thermally annealed NbOx films with crystalline NbO2 phases.
{"title":"Electroforming and threshold switching characteristics of NbOx films with crystalline NbO2 phase","authors":"Jimin Lee, Jaeyeon Kim, Juyoung Jeong, H. Sohn","doi":"10.1116/6.0001215","DOIUrl":"https://doi.org/10.1116/6.0001215","url":null,"abstract":"Threshold switching (TS) and negative differential resistance (NDR) characteristic of niobium oxide (NbOx) films have been actively studied for neuromorphic computing. Generally, the electroforming process is required for TS and NDR in NbOx films. However, different electroforming and TS properties have been reported for NbOx films with different crystallinities or chemical compositions. This study investigates the effect of thermal annealing on the microstructures of NbOx films and compares the electroforming, TS, and NDR characteristics of amorphous, partially crystallized, and fully crystallized films. The distributions of crystalline NbO2 phase in NbOx films annealed at various temperatures were analyzed using transmission electron microscopy dark-field imaging, and it was observed that the distribution of crystalline NbO2 phase influenced the electroforming process. Moreover, TS characteristics improved in the thermally annealed NbOx films with crystalline NbO2 phases.","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"74 6 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87816786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Nguyen, An Hoang-Thuy Nguyen, Jiyong Yim, Anh-Duy Nguyen, Mingyu Kim, Jeonghan Kim, Jongyeon Baek, Rino Choi
Field-effect transistors on a floating body channel have been used for a range of applications, such as three-dimensional nand flash and high-performance devices on silicon-on-insulator wafers. Conventional techniques to characterize the defect states cannot be implemented because those transistors do not have body contacts. A single-pulse charge pumping (SPCP) method was introduced to characterize the defect state distribution of the floating body transistors. The results extracted from the SPCP method on the three-terminal transistors (without body contact) agreed well with those from a conventional charge pumping method or SPCP on four-terminal transistors (with body contact). The validity of the SPCP measurement of the floating body devices was demonstrated by monitoring the increase in the defect state of the three-terminal poly-Si transistors density during the bias stress test. The SPCP method could detect the defect states of floating body transistors with high resolution.
{"title":"Defect characterization in floating body transistors using a single pulse charge pumping method","authors":"M. Nguyen, An Hoang-Thuy Nguyen, Jiyong Yim, Anh-Duy Nguyen, Mingyu Kim, Jeonghan Kim, Jongyeon Baek, Rino Choi","doi":"10.1116/6.0001172","DOIUrl":"https://doi.org/10.1116/6.0001172","url":null,"abstract":"Field-effect transistors on a floating body channel have been used for a range of applications, such as three-dimensional nand flash and high-performance devices on silicon-on-insulator wafers. Conventional techniques to characterize the defect states cannot be implemented because those transistors do not have body contacts. A single-pulse charge pumping (SPCP) method was introduced to characterize the defect state distribution of the floating body transistors. The results extracted from the SPCP method on the three-terminal transistors (without body contact) agreed well with those from a conventional charge pumping method or SPCP on four-terminal transistors (with body contact). The validity of the SPCP measurement of the floating body devices was demonstrated by monitoring the increase in the defect state of the three-terminal poly-Si transistors density during the bias stress test. The SPCP method could detect the defect states of floating body transistors with high resolution.","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"11 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87097427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shuguang Wang, Z. Zuo, Z. Ji, Xiaorui Chen, H. Ye, G. Han
Damage mechanisms and related performance degradations induced by ion beam etching (IBE) process in the fabrication of magnetic tunnel junctions (MTJs) were studied systematically. The loss in tunneling magnetoresistance (TMR) and coercive field (Hc) was investigated with different MTJ pillar sizes and IBE incident angles. It is found that IBE-induced damage is the formation of a surficial amorphous shell in the outer rim of an MTJ pillar. This amorphous shell is of low conductivity and TMR, mainly arising from the lattice damage of MgO barrier and partial oxidation of free/reference layers. Based on experimental and theoretical findings, we optimized the IBE process to reduce the damage as well as recover from degradation. As a result, the TMR loss ratio in comparison with a blanket film is reduced from about 18% to 7%, and Hc is increased from 1490 to 2280 Oe for the same stack.
{"title":"Etching damage induced performance degradation in spin transfer torque magnetic random access memory fabrication","authors":"Shuguang Wang, Z. Zuo, Z. Ji, Xiaorui Chen, H. Ye, G. Han","doi":"10.1116/6.0001256","DOIUrl":"https://doi.org/10.1116/6.0001256","url":null,"abstract":"Damage mechanisms and related performance degradations induced by ion beam etching (IBE) process in the fabrication of magnetic tunnel junctions (MTJs) were studied systematically. The loss in tunneling magnetoresistance (TMR) and coercive field (Hc) was investigated with different MTJ pillar sizes and IBE incident angles. It is found that IBE-induced damage is the formation of a surficial amorphous shell in the outer rim of an MTJ pillar. This amorphous shell is of low conductivity and TMR, mainly arising from the lattice damage of MgO barrier and partial oxidation of free/reference layers. Based on experimental and theoretical findings, we optimized the IBE process to reduce the damage as well as recover from degradation. As a result, the TMR loss ratio in comparison with a blanket film is reduced from about 18% to 7%, and Hc is increased from 1490 to 2280 Oe for the same stack.","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"37 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85234594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report on a new approach to transport samples for surface analysis safely from oxidation over long distances. The transport method is based on silane-doped inert gases, which are used as a transport medium. In this paper, we show that with the help of silane, highly purified inert gas atmospheres with oxygen contents of less than 10−15 mbar can be generated. In addition, we demonstrate that compared to commercially available inert gases, silane-doped inert gas atmospheres can be efficiently used to store and transport samples safely from oxidation. For this, surface sensitive measurements on highly reactive titanium samples, which passed the different stages of samples transport, were performed. The measurements revealed that no pronounced oxidation by the silane-doped atmosphere takes place. However, adsorption of silicon oxide from the atmosphere was observed.
{"title":"Oxygen-free transport of samples in silane-doped inert gas atmospheres for surface analysis","authors":"R. Gustus, Maik Szafarska, W. Maus‐Friedrichs","doi":"10.1116/6.0001180","DOIUrl":"https://doi.org/10.1116/6.0001180","url":null,"abstract":"We report on a new approach to transport samples for surface analysis safely from oxidation over long distances. The transport method is based on silane-doped inert gases, which are used as a transport medium. In this paper, we show that with the help of silane, highly purified inert gas atmospheres with oxygen contents of less than 10−15 mbar can be generated. In addition, we demonstrate that compared to commercially available inert gases, silane-doped inert gas atmospheres can be efficiently used to store and transport samples safely from oxidation. For this, surface sensitive measurements on highly reactive titanium samples, which passed the different stages of samples transport, were performed. The measurements revealed that no pronounced oxidation by the silane-doped atmosphere takes place. However, adsorption of silicon oxide from the atmosphere was observed.","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"148 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77842009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We insert a silver (Ag) layer between zinc oxide (ZnO) and graphene films of a bilayer structure to create trilayer transparent conductive oxide films with improved conductivities due to the bridge provided by the Ag layer to transport free electrons. To construct trilayer ZnO/Ag/graphene transparent conductive films, the Ag and ZnO layers are deposited successively on a graphene/glass substrate by magnetron sputtering from solid Ag and powder ZnO targets. The results show that the electron concentration in the trilayer films increases one order of magnitude to 1021 cm−3 upon inserting dispersed Ag dots and three orders of magnitude to 1023 cm−3 upon adding a relatively continuous 10.5-nm-thick Ag layer. However, the electron mobility drops dramatically from 10−1 to 10−2 cm2 V−1 s−1 because the dispersed Ag dots of a thin Ag layer form narrow bridges, which limit electron transport. The continuous 10.5-nm-thick Ag layer not only acts as a wide bridge but also provides electrons; therefore, the resistivity of the ZnO/Ag(continuous)/graphene trilayer decreases significantly, while the mobility of the trilayer film remains of the same order of magnitude as that of the continuous Ag layer. Of course, the transparency of the trilayer film decreases slightly upon inserting the Ag layer. To create frontier electrodes, the ZnO/Ag/graphene multilayer structure must be built up to form transparent conductive oxide films.
{"title":"ZnO/Ag/graphene transparent conductive oxide film with ultrathin Ag layer","authors":"Fang Fang, Junsheng Wu, Caibo Yan, Yanwen Zhou, Zhuo Zhao","doi":"10.1116/6.0001226","DOIUrl":"https://doi.org/10.1116/6.0001226","url":null,"abstract":"We insert a silver (Ag) layer between zinc oxide (ZnO) and graphene films of a bilayer structure to create trilayer transparent conductive oxide films with improved conductivities due to the bridge provided by the Ag layer to transport free electrons. To construct trilayer ZnO/Ag/graphene transparent conductive films, the Ag and ZnO layers are deposited successively on a graphene/glass substrate by magnetron sputtering from solid Ag and powder ZnO targets. The results show that the electron concentration in the trilayer films increases one order of magnitude to 1021 cm−3 upon inserting dispersed Ag dots and three orders of magnitude to 1023 cm−3 upon adding a relatively continuous 10.5-nm-thick Ag layer. However, the electron mobility drops dramatically from 10−1 to 10−2 cm2 V−1 s−1 because the dispersed Ag dots of a thin Ag layer form narrow bridges, which limit electron transport. The continuous 10.5-nm-thick Ag layer not only acts as a wide bridge but also provides electrons; therefore, the resistivity of the ZnO/Ag(continuous)/graphene trilayer decreases significantly, while the mobility of the trilayer film remains of the same order of magnitude as that of the continuous Ag layer. Of course, the transparency of the trilayer film decreases slightly upon inserting the Ag layer. To create frontier electrodes, the ZnO/Ag/graphene multilayer structure must be built up to form transparent conductive oxide films.","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"12 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75546523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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