V. Lanzio, V. Gutiérrez, John Hermiz, Kristofer E Bouchard, S. Cabrini
{"title":"Neural optoelectrodes merging semiconductor scalability with polymeric-like bendability for low damage acute in vivo neuron readout and stimulation","authors":"V. Lanzio, V. Gutiérrez, John Hermiz, Kristofer E Bouchard, S. Cabrini","doi":"10.1116/6.0001269","DOIUrl":"https://doi.org/10.1116/6.0001269","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"258 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76205368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Incorporating photoemission into the theoretical unification of electron emission and space-charge limited current","authors":"Sarah A. Lang, A. Darr, A. Garner","doi":"10.1116/6.0001515","DOIUrl":"https://doi.org/10.1116/6.0001515","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"28 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87000621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Grenadyorov, A. Solovyev, K. Oskomov, T. Santra, Pallavi Gupta, Dmitriy S. Korneev
This paper investigates the influence of the structure and properties of diamondlike nanocomposite (DLN or a-C:H:SiOx) coatings synthesized by plasma-assisted chemical vapor deposition on cell viability and coating biocompatibility. The structure and properties of the DLN coatings are changed by the negative pulse amplitude of the bipolar bias voltage of the substrate. The structure of the obtained DLN coatings is studied by Fourier-transform infrared spectroscopy and Raman spectroscopy. Atomic force microscopy provides angstrom-level surface-profiling information. The microhardness testing of the DLN coatings is performed on a nanohardness indenter of a three-sided Berkovich pyramid. It is shown that the higher roughness of the substrate surface, the growth in the crystalline graphite content in the coating, and Si—C bonds improve the DLN coating biocompatibility deposited at a −500 V bias voltage and the cell viability (>98% of HeLa cells), resulting in a lower cell death (1–2%). It is demonstrated that DLN coatings can be applied in biomedicine.
{"title":"Influence of structure and composition of diamond-like nanocomposite coatings on cell viability","authors":"A. Grenadyorov, A. Solovyev, K. Oskomov, T. Santra, Pallavi Gupta, Dmitriy S. Korneev","doi":"10.1116/6.0001263","DOIUrl":"https://doi.org/10.1116/6.0001263","url":null,"abstract":"This paper investigates the influence of the structure and properties of diamondlike nanocomposite (DLN or a-C:H:SiOx) coatings synthesized by plasma-assisted chemical vapor deposition on cell viability and coating biocompatibility. The structure and properties of the DLN coatings are changed by the negative pulse amplitude of the bipolar bias voltage of the substrate. The structure of the obtained DLN coatings is studied by Fourier-transform infrared spectroscopy and Raman spectroscopy. Atomic force microscopy provides angstrom-level surface-profiling information. The microhardness testing of the DLN coatings is performed on a nanohardness indenter of a three-sided Berkovich pyramid. It is shown that the higher roughness of the substrate surface, the growth in the crystalline graphite content in the coating, and Si—C bonds improve the DLN coating biocompatibility deposited at a −500 V bias voltage and the cell viability (>98% of HeLa cells), resulting in a lower cell death (1–2%). It is demonstrated that DLN coatings can be applied in biomedicine.","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"25 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90521034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ion implantation is a robust and established method to customize the electronic properties of Si. However, fabricating doped, ultrafine semiconductor nanostructures can be challenging. Ion implantation has well-established effects on the dry etch rates of Si, which becomes increasingly consequential as the target dimension shrinks below a few tens of nanometers. While dry etching arrays of block copolymer-templated nanoscale holes (pitch = 37.5 nm, diameter ∼25 nm) into p-type, n-type, and undoped Si, we observed that the lateral etch rate was notably larger for the n-type regions than p-type or undoped regions. By doing image analyses on high resolution electron micrographs of the nanostructured hole arrays, we were able to extract the porosity and average radii of the holes with subnanometer sensitivity and compare the relative etch rates between different doping conditions. We found that degenerately doped n-type silicon consistently etches between approximately 17% and 27% faster in the lateral direction than p-type Si, resulting in significantly larger porosity and, consequently, less mechanical stability. Here, we demonstrate that top-down dimensional analysis of a densely packed porous nanostructure is a robust method for assessing extremely small differences in the lateral, chemical etch rate of doped Si to a degree of sensitivity that was previously unachievable. The minute, dense-packed nature of block copolymer self-assembled nanostructures is shown to be ideal for this application. This proposed method could be useful for designing fabrication processes for heterogeneous nanostructures, as slight dry etch rate variations that may be within process tolerance at the micrometer-scale appear to have nontrivial consequences at the nanometer scale.
{"title":"Using block-copolymer nanolithography as a tool to sensitively evaluate variation in chemical dry etching rates of semiconductor materials with sub-5 nm resolution","authors":"E. Ashley, Peter J. DudaIII, P. Nealey","doi":"10.1116/6.0001287","DOIUrl":"https://doi.org/10.1116/6.0001287","url":null,"abstract":"Ion implantation is a robust and established method to customize the electronic properties of Si. However, fabricating doped, ultrafine semiconductor nanostructures can be challenging. Ion implantation has well-established effects on the dry etch rates of Si, which becomes increasingly consequential as the target dimension shrinks below a few tens of nanometers. While dry etching arrays of block copolymer-templated nanoscale holes (pitch = 37.5 nm, diameter ∼25 nm) into p-type, n-type, and undoped Si, we observed that the lateral etch rate was notably larger for the n-type regions than p-type or undoped regions. By doing image analyses on high resolution electron micrographs of the nanostructured hole arrays, we were able to extract the porosity and average radii of the holes with subnanometer sensitivity and compare the relative etch rates between different doping conditions. We found that degenerately doped n-type silicon consistently etches between approximately 17% and 27% faster in the lateral direction than p-type Si, resulting in significantly larger porosity and, consequently, less mechanical stability. Here, we demonstrate that top-down dimensional analysis of a densely packed porous nanostructure is a robust method for assessing extremely small differences in the lateral, chemical etch rate of doped Si to a degree of sensitivity that was previously unachievable. The minute, dense-packed nature of block copolymer self-assembled nanostructures is shown to be ideal for this application. This proposed method could be useful for designing fabrication processes for heterogeneous nanostructures, as slight dry etch rate variations that may be within process tolerance at the micrometer-scale appear to have nontrivial consequences at the nanometer scale.","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"7 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88719489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The unique properties of superhydrophobic surfaces have already been widely introduced into many applications and play a more and more important role in our daily life. However, different wetting states will lead to different properties and performances so that distinguishing the wetting states is essential. Until now, as it lacks an accurate and nondestructive technology to test the wetting states in real time, this prevents the study of superhydrophobic phenomena and their applications. Although this has already caught the attention of the scientific community, there is still no successful solution presented yet. Here, we develop a nondestructive in situ optical technology based on characterizing the transmission spectrum of the superhydrophobic surfaces, which is capable of distinguishing the different wetting states such as the Cassie–Baxter state, the mixed wetting state, and the Wenzel state. By using the finite-difference time-domain method, field distribution and transmission spectrum of the superhydrophobic surfaces can be simulated. The experimental data fit well with simulation data. All the results prove the feasibility of the new optical technology to characterize wetting states.
{"title":"Optical metrology of characterizing wetting states","authors":"Deming Meng, Yifei Wang, Hao Yang, Buyun Chen, Pan Hu, Boxiang Song, Yunxiang Wang, Zerui Liu, Tse-Hsien Ou, Ximing Zheng, Yichen Gong, Wei Wu","doi":"10.1116/6.0001187","DOIUrl":"https://doi.org/10.1116/6.0001187","url":null,"abstract":"The unique properties of superhydrophobic surfaces have already been widely introduced into many applications and play a more and more important role in our daily life. However, different wetting states will lead to different properties and performances so that distinguishing the wetting states is essential. Until now, as it lacks an accurate and nondestructive technology to test the wetting states in real time, this prevents the study of superhydrophobic phenomena and their applications. Although this has already caught the attention of the scientific community, there is still no successful solution presented yet. Here, we develop a nondestructive in situ optical technology based on characterizing the transmission spectrum of the superhydrophobic surfaces, which is capable of distinguishing the different wetting states such as the Cassie–Baxter state, the mixed wetting state, and the Wenzel state. By using the finite-difference time-domain method, field distribution and transmission spectrum of the superhydrophobic surfaces can be simulated. The experimental data fit well with simulation data. All the results prove the feasibility of the new optical technology to characterize wetting states.","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"211 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74965457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The influence of chemical parameters on electrical degradation in an AlGaN/GaN heterostructure was investigated in order to improve performance in metal-oxide-semiconductor high-electron mobility transistor devices. We first examined the influence of plasma chemistry on electrical degradation by using different plasma chemistries for the SiN capping layer opening and comparing the results. The full standard chemistry was evaluated in order to determine the impact of each gas on the degradation. Rsheet and x-ray photoelectron microscopy characterizations and simulations were performed to better understand how light elements such as helium penetrate deeply into the heterostructure and degrade its electrical characteristics. The materials used as masks were also studied. A photoresist mask and a SiN mask were compared on an AlGaN/GaN heterostructure during plasma processing. Electrical degradation was always greater in the presence of a resist due to the decomposition of the resist under the plasma causing hydrogen to be released into the plasma. Simulation of hydrogen implantation in AlGaN was also performed to understand its impact on electrical performance.
{"title":"Influences of etching chemical parameters on AlGaN/GaN electrical degradation in power devices","authors":"Frédéric Le Roux, N. Possémé, P. Burtin","doi":"10.1116/6.0001130","DOIUrl":"https://doi.org/10.1116/6.0001130","url":null,"abstract":"The influence of chemical parameters on electrical degradation in an AlGaN/GaN heterostructure was investigated in order to improve performance in metal-oxide-semiconductor high-electron mobility transistor devices. We first examined the influence of plasma chemistry on electrical degradation by using different plasma chemistries for the SiN capping layer opening and comparing the results. The full standard chemistry was evaluated in order to determine the impact of each gas on the degradation. Rsheet and x-ray photoelectron microscopy characterizations and simulations were performed to better understand how light elements such as helium penetrate deeply into the heterostructure and degrade its electrical characteristics. The materials used as masks were also studied. A photoresist mask and a SiN mask were compared on an AlGaN/GaN heterostructure during plasma processing. Electrical degradation was always greater in the presence of a resist due to the decomposition of the resist under the plasma causing hydrogen to be released into the plasma. Simulation of hydrogen implantation in AlGaN was also performed to understand its impact on electrical performance.","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"28 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78914820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Bessouet, S. Lemettre, Charlotte Kutyla, A. Bosseboeuf, P. Coste, T. Sauvage, H. Lecoq, Olivier Wendling, A. Bellamy, Piyush Jagtap, S. Escoubas, C. Guichet, O. Thomas, J. Moulin
{"title":"Erratum: “Electrical and ion beam analyses of yttrium and yttrium-titanium getter thin films oxidation” [J. Vac. Sci. Technol. B 39, 054202 (2021)]","authors":"C. Bessouet, S. Lemettre, Charlotte Kutyla, A. Bosseboeuf, P. Coste, T. Sauvage, H. Lecoq, Olivier Wendling, A. Bellamy, Piyush Jagtap, S. Escoubas, C. Guichet, O. Thomas, J. Moulin","doi":"10.1116/6.0001458","DOIUrl":"https://doi.org/10.1116/6.0001458","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"28 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77559781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. L’vov, S. V. Bulyarskiy, A. Saurov, V. Svetukhin, A. I. Terentyev
We explore the electron beam deposition of cobalt on a silicon substrate. The deposition has been studied in experiments at different electron beam powers. The temperature distribution over the metal surface has been calculated using the stationary heat conduction equation for a two-phase system. The obtained calculation results on the dependence of the film growth rate on electron beam power are in good agreement with our experimental data. We have shown that the film growth rate is limited by the flux of cobalt atoms on the film surface.
{"title":"Electron beam deposition of cobalt on the silicon substrate: Experiment and simulation","authors":"P. L’vov, S. V. Bulyarskiy, A. Saurov, V. Svetukhin, A. I. Terentyev","doi":"10.1116/6.0001223","DOIUrl":"https://doi.org/10.1116/6.0001223","url":null,"abstract":"We explore the electron beam deposition of cobalt on a silicon substrate. The deposition has been studied in experiments at different electron beam powers. The temperature distribution over the metal surface has been calculated using the stationary heat conduction equation for a two-phase system. The obtained calculation results on the dependence of the film growth rate on electron beam power are in good agreement with our experimental data. We have shown that the film growth rate is limited by the flux of cobalt atoms on the film surface.","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"193 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81067645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The specific advantages of implementing MoS2 and other layered semiconductors for optoelectronic biosensing and other relevant photodetection applications remain unclear. In this work, we investigate the photoresponsivity and noise characteristics of in-plane MoS2 photodetectors. This work indicates that MoS2 photodetectors exhibit lower noise equivalent power (NEP) and detectivity (D*) in comparison with commercial CdS photodetectors. In addition, the low-frequency NEP and D* values of MoS2 photodetectors exhibit a prominent dependence on the MoS2 photoactive layer thickness. We have identified the optimal MoS2 thickness in the range of 8–30 nm. We also study the photoresponse characteristics of optimized MoS2 photodetectors at several different wavelengths that are important for clinical colorimetry assays. Such an optimized photodetector shows a maximum photoresponsivity of 164.3 A/W and a minimum NEP of 3.99 × 10−17 W/Hz1/2 (and a D* of 5.01 × 1010 J) with relative variance less than 14%. This work provides a useful guideline for optimizing the photoresponse characteristics of MoS2-based optoelectronic devices, which is critical to practical low-frequency optoelectronic biosensing applications.
{"title":"Optoelectronic performance characterization of MoS2 photodetectors for low frequency sensing applications","authors":"S. Ki, Mingze Chen, Xiaogan Liang","doi":"10.1116/6.0001280","DOIUrl":"https://doi.org/10.1116/6.0001280","url":null,"abstract":"The specific advantages of implementing MoS2 and other layered semiconductors for optoelectronic biosensing and other relevant photodetection applications remain unclear. In this work, we investigate the photoresponsivity and noise characteristics of in-plane MoS2 photodetectors. This work indicates that MoS2 photodetectors exhibit lower noise equivalent power (NEP) and detectivity (D*) in comparison with commercial CdS photodetectors. In addition, the low-frequency NEP and D* values of MoS2 photodetectors exhibit a prominent dependence on the MoS2 photoactive layer thickness. We have identified the optimal MoS2 thickness in the range of 8–30 nm. We also study the photoresponse characteristics of optimized MoS2 photodetectors at several different wavelengths that are important for clinical colorimetry assays. Such an optimized photodetector shows a maximum photoresponsivity of 164.3 A/W and a minimum NEP of 3.99 × 10−17 W/Hz1/2 (and a D* of 5.01 × 1010 J) with relative variance less than 14%. This work provides a useful guideline for optimizing the photoresponse characteristics of MoS2-based optoelectronic devices, which is critical to practical low-frequency optoelectronic biosensing applications.","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"61 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90826246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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