Pub Date : 2026-01-06DOI: 10.1016/j.mssp.2026.110422
Shixin Li , Zilin Ye , Zhuangzhi Li , Shaochang Wang , Chunhui Zhu
High-quality In4Se3 single crystals were synthesized using the Bridgman method. Multilayer In4Se3 nanosheets exfoliated from the crystals showed an experimental bandgap of approximately 1.17 eV. A mixed-dimensional van der Waals heterostructure was constructed by integrating two-dimensional In4Se3 nanosheets with a three-dimensional silicon substrate. The resulting In4Se3 nanosheet-Si heterojunction device exhibited a rectification ratio up to 1029 at room temperature. Temperature-dependent electrical measurements revealed that the carrier transport is dominated by barrier inhomogeneity. Under 650 nm illumination, the device showed a pronounced photoresponse, with a responsivity of 23.1 A/W, a photoswitching ratio of 2470, and a specific detectivity of 1.61 × 1012 Jones. The external quantum efficiency reached 4.42 × 103 %, accompanied by a rise time of 120 μs and a fall time of 360 μs.
{"title":"Investigation on electrical and optoelectronic properties of In4Se3 Nanosheet-Si mixed-dimensional heterojunction devices","authors":"Shixin Li , Zilin Ye , Zhuangzhi Li , Shaochang Wang , Chunhui Zhu","doi":"10.1016/j.mssp.2026.110422","DOIUrl":"10.1016/j.mssp.2026.110422","url":null,"abstract":"<div><div>High-quality In<sub>4</sub>Se<sub>3</sub> single crystals were synthesized using the Bridgman method. Multilayer In<sub>4</sub>Se<sub>3</sub> nanosheets exfoliated from the crystals showed an experimental bandgap of approximately 1.17 eV. A mixed-dimensional van der Waals heterostructure was constructed by integrating two-dimensional In<sub>4</sub>Se<sub>3</sub> nanosheets with a three-dimensional silicon substrate. The resulting In<sub>4</sub>Se<sub>3</sub> nanosheet-Si heterojunction device exhibited a rectification ratio up to 1029 at room temperature. Temperature-dependent electrical measurements revealed that the carrier transport is dominated by barrier inhomogeneity. Under 650 nm illumination, the device showed a pronounced photoresponse, with a responsivity of 23.1 A/W, a photoswitching ratio of 2470, and a specific detectivity of 1.61 × 10<sup>12</sup> Jones. The external quantum efficiency reached 4.42 × 10<sup>3</sup> %, accompanied by a rise time of 120 μs and a fall time of 360 μs.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110422"},"PeriodicalIF":4.6,"publicationDate":"2026-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-06DOI: 10.1016/j.mssp.2025.110403
Gang Liu , Baonan Jia , Zhengjun Wang , Shengjiao Qian , Bohao Cui , Yuxi Bi , Chao Dong , Changcheng Chen , Pengfei Lu
Double perovskites have attracted significant attention due to their ability to modulate photovoltaic properties and exhibit higher stability through elemental control. However, most double perovskites face the challenges of large band gap ranges and indirect band gaps. To enhance the performance of fully inorganic double perovskites and reduce the use of lead, this study employs a combination of density functional theory (DFT) and the SISSO algorithm in machine learning to investigate the structural, stability, electronic, and optical properties of lead-free halide double perovskite Cs2B'AgX6 (B' = Ir, Rh; X = Cl, Br, and I). The results of thermodynamic stability and electronic properties show that these double perovskites have higher stability than lead-based perovskites and exhibit an appropriate band gap range for optoelectronic applications. The band gap decreases from 0.89 eV to 1.6 eV as halogen elements are substituted from Cl to I. Moreover, the double perovskite demonstrates strong light absorption. These results suggest that Cs2B'AgX6 (B' = Ir, Rh; X = Cl, Br, and I) double perovskites hold great potential in optoelectronic applications.
双钙钛矿由于其能够通过元素控制调制光伏特性并表现出更高的稳定性而引起了人们的极大关注。然而，大多数双钙钛矿都面临着大带隙范围和间接带隙的挑战。为了提高全无机双钙钛矿的性能，减少铅的使用，本研究结合密度泛函理论（DFT）和机器学习中的SISSO算法，研究了无铅卤化物双钙钛矿Cs2B' agx6 （B' = Ir, Rh; X = Cl, Br, and I）的结构、稳定性、电子和光学性质。热力学稳定性和电子性能的结果表明，这些双钙钛矿比铅基钙钛矿具有更高的稳定性，并且具有合适的光电应用带隙范围。当卤素元素由Cl取代为i时，带隙从0.89 eV减小到1.6 eV，双钙钛矿具有较强的光吸收能力。这些结果表明Cs2B' agx6 （B' = Ir, Rh; X = Cl, Br, and I）双钙钛矿在光电应用中具有很大的潜力。
{"title":"First-principles study of lead-free halide double perovskite Cs2B'AgX6 (B'=Ir, Rh, X = Cl, Br, and I) as potential material in optoelectronic devices with SISSO-based feature selection","authors":"Gang Liu , Baonan Jia , Zhengjun Wang , Shengjiao Qian , Bohao Cui , Yuxi Bi , Chao Dong , Changcheng Chen , Pengfei Lu","doi":"10.1016/j.mssp.2025.110403","DOIUrl":"10.1016/j.mssp.2025.110403","url":null,"abstract":"<div><div>Double perovskites have attracted significant attention due to their ability to modulate photovoltaic properties and exhibit higher stability through elemental control. However, most double perovskites face the challenges of large band gap ranges and indirect band gaps. To enhance the performance of fully inorganic double perovskites and reduce the use of lead, this study employs a combination of density functional theory (DFT) and the SISSO algorithm in machine learning to investigate the structural, stability, electronic, and optical properties of lead-free halide double perovskite Cs<sub>2</sub>B'AgX<sub>6</sub> (B' = Ir, Rh; X = Cl, Br, and I). The results of thermodynamic stability and electronic properties show that these double perovskites have higher stability than lead-based perovskites and exhibit an appropriate band gap range for optoelectronic applications. The band gap decreases from 0.89 eV to 1.6 eV as halogen elements are substituted from Cl to I. Moreover, the double perovskite demonstrates strong light absorption. These results suggest that Cs<sub>2</sub>B'AgX<sub>6</sub> (B' = Ir, Rh; X = Cl, Br, and I) double perovskites hold great potential in optoelectronic applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110403"},"PeriodicalIF":4.6,"publicationDate":"2026-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-06DOI: 10.1016/j.mssp.2025.110390
Tesalonika Siregar , Yunasfi , Mashadi , Wisnu Ari Adi , Budhy Kurniawan , Jan Setiawan
Phase purity and magnetic properties play a crucial role in determining the effectiveness of electromagnetic (EM) wave absorption. This study investigates the influence of milling duration and sintering temperature on the crystal structure, magnetic behavior, and microwave absorption performance of the perovskite material Co0.75Ni0.25Ti0.975Y0.025O3 (CNTYO), synthesized via the solid-state reaction assisted by high-energy milling. X-ray diffraction results confirmed the formation of a single-phase perovskite structure after ≥5 h of milling. The 7 h-milled sample exhibited the best absorption performance, with a minimum reflection loss (|RLmax|) of −21.94 dB at 6.17 GHz for a thickness of 1.5 mm. Prolonged milling enhanced microstructural homogeneity and interfacial polarization, improving impedance matching between the material and free space. Sintering at higher temperatures (1100–1200 °C) induced the formation of a Ti2Y2O7 secondary phase, which reduced defect density and magnetic dielectric losses, thereby weakening the overall absorption performance. The material exhibits low-magnetization magnetic behavior dominated by weak ferromagnetic or paramagnetic-like contributions. These findings emphasize that precise control of milling and sintering parameters is essential for tailoring phase purity, magnetic properties, and electromagnetic response, establishing CNTYO as a lightweight and thermally stable candidate for advanced radar-absorbing material (RAM) applications.
{"title":"Tuning phase purity, magnetic softness, and microwave absorption in Co0.75Ni0.25Ti0.975Y0.025O3 via controlled milling and sintering","authors":"Tesalonika Siregar , Yunasfi , Mashadi , Wisnu Ari Adi , Budhy Kurniawan , Jan Setiawan","doi":"10.1016/j.mssp.2025.110390","DOIUrl":"10.1016/j.mssp.2025.110390","url":null,"abstract":"<div><div>Phase purity and magnetic properties play a crucial role in determining the effectiveness of electromagnetic (EM) wave absorption. This study investigates the influence of milling duration and sintering temperature on the crystal structure, magnetic behavior, and microwave absorption performance of the perovskite material Co<sub>0</sub>.<sub>75</sub>Ni<sub>0</sub>.<sub>25</sub>Ti<sub>0</sub>.<sub>975</sub>Y<sub>0</sub>.<sub>025</sub>O<sub>3</sub> (CNTYO), synthesized via the solid-state reaction assisted by high-energy milling. X-ray diffraction results confirmed the formation of a single-phase perovskite structure after ≥5 h of milling. The 7 h-milled sample exhibited the best absorption performance, with a minimum reflection loss (|RL<sub>max</sub>|) of −21.94 dB at 6.17 GHz for a thickness of 1.5 mm. Prolonged milling enhanced microstructural homogeneity and interfacial polarization, improving impedance matching between the material and free space. Sintering at higher temperatures (1100–1200 °C) induced the formation of a Ti<sub>2</sub>Y<sub>2</sub>O<sub>7</sub> secondary phase, which reduced defect density and magnetic dielectric losses, thereby weakening the overall absorption performance. The material exhibits low-magnetization magnetic behavior dominated by weak ferromagnetic or paramagnetic-like contributions. These findings emphasize that precise control of milling and sintering parameters is essential for tailoring phase purity, magnetic properties, and electromagnetic response, establishing CNTYO as a lightweight and thermally stable candidate for advanced radar-absorbing material (RAM) applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110390"},"PeriodicalIF":4.6,"publicationDate":"2026-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-06DOI: 10.1016/j.mssp.2026.110418
Junxiong Chai , Zhezhe Cong , Xiaoli Lu
Wide bandgap semiconductors have gained significant attention in RF device applications owing to their superior carrier mobility. To enhance the carrier mobility within the channel, researchers have employed the deposition of gate dielectrics to modulate the internal stress of GaN. Nevertheless, this dielectric deposition process inevitably introduces defects, which can detrimentally impact device performance. Our group previously demonstrated that the regulation of ferroelectric polarization effectively mitigates interface states. In this paper, the interplay between GaN internal stress and carrier mobility under the influence of nanochannel ferroelastic stress modulation has been explored. The output current and transconductance exhibited substantial enhancements, reaching 1026 mA/mm and 259 mS/mm, respectively. After the 680 nm channel formation, the compressive stress was reduced to 0.37 GPa, with carrier mobility increasing to 2610 cm2/V·s (110 % of the initial value). The reduction of compressive stress improves carrier mobility to a certain extent. This research provides a straightforward and efficacious approach to investigating the factors through which ferroelastic modulation influences the internal stress in GaN.
{"title":"Giant ferroelastic stress modulation in AlGaN/GaN heterostructure and its transport mechanism","authors":"Junxiong Chai , Zhezhe Cong , Xiaoli Lu","doi":"10.1016/j.mssp.2026.110418","DOIUrl":"10.1016/j.mssp.2026.110418","url":null,"abstract":"<div><div>Wide bandgap semiconductors have gained significant attention in RF device applications owing to their superior carrier mobility. To enhance the carrier mobility within the channel, researchers have employed the deposition of gate dielectrics to modulate the internal stress of GaN. Nevertheless, this dielectric deposition process inevitably introduces defects, which can detrimentally impact device performance. Our group previously demonstrated that the regulation of ferroelectric polarization effectively mitigates interface states. In this paper, the interplay between GaN internal stress and carrier mobility under the influence of nanochannel ferroelastic stress modulation has been explored. The output current and transconductance exhibited substantial enhancements, reaching 1026 mA/mm and 259 mS/mm, respectively. After the 680 nm channel formation, the compressive stress was reduced to 0.37 GPa, with carrier mobility increasing to 2610 cm<sup>2</sup>/V·s (110 % of the initial value). The reduction of compressive stress improves carrier mobility to a certain extent. This research provides a straightforward and efficacious approach to investigating the factors through which ferroelastic modulation influences the internal stress in GaN.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110418"},"PeriodicalIF":4.6,"publicationDate":"2026-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-05DOI: 10.1016/j.mssp.2025.110385
Justyna Wierzbicka , Wojciech Hendzelek , Maciej Kamiński , Jarosław Tarenko , Joanna Jankowska-Śliwińska , Aleksandra Wójcicka , Oskar Sadowski , Aneta Gołębiowska , Krzysztof Urbanowski , Veronica Gao Zhan , Anna Szerling , Andrzej Taube
The usage of p-NiO-based gate architecture can be beneficial over conventionally used p-GaN gate structure in the construction of normally-off GaN-based high electron mobility transistors, due to simpler, cost-effective and low-thermal budget fabrication process flow. Here in this work we report normally-off recessed p-NiO gate GaN-based HEMTs fabricated on "buffer-free" AlGaN/GaN heterostructure on 4H-SiC substrate. By using 17 nm recess p-NiO gate structure, appropriate post-deposition annealing and passivation scheme high positive threshold +0.8V (+0.2 V), high drain output current over 0.7 A/mm and low subthreshold swing 80 mV/dec and on-state resistance 10 Ωmm were obtained simultaneously. Thanks to the use of a high-quality heterostructure on a semi-insulating substrate and the absence of substrate leakage current, normally-off devices with high breakdown voltage values of up to 2 kV for a gate-drain distance of 20 μm were achieved, which corresponds to an average breakdown field value of 1 MV/cm, without the use of additional field-plate termination structures.
{"title":"2 kV normally-off recessed p-NiO gate GaN-based HEMTs fabricated using “buffer-free” AlGaN/GaN heterostructures on SiC substrates","authors":"Justyna Wierzbicka , Wojciech Hendzelek , Maciej Kamiński , Jarosław Tarenko , Joanna Jankowska-Śliwińska , Aleksandra Wójcicka , Oskar Sadowski , Aneta Gołębiowska , Krzysztof Urbanowski , Veronica Gao Zhan , Anna Szerling , Andrzej Taube","doi":"10.1016/j.mssp.2025.110385","DOIUrl":"10.1016/j.mssp.2025.110385","url":null,"abstract":"<div><div>The usage of p-NiO-based gate architecture can be beneficial over conventionally used p-GaN gate structure in the construction of normally-off GaN-based high electron mobility transistors, due to simpler, cost-effective and low-thermal budget fabrication process flow. Here in this work we report normally-off recessed p-NiO gate GaN-based HEMTs fabricated on \"buffer-free\" AlGaN/GaN heterostructure on 4H-SiC substrate. By using 17 nm recess p-NiO gate structure, appropriate post-deposition annealing and passivation scheme high positive threshold +0.8V (+0.2 V), high drain output current over 0.7 A/mm and low subthreshold swing 80 mV/dec and on-state resistance 10 Ωmm were obtained simultaneously. Thanks to the use of a high-quality heterostructure on a semi-insulating substrate and the absence of substrate leakage current, normally-off devices with high breakdown voltage values of up to 2 kV for a gate-drain distance of 20 μm were achieved, which corresponds to an average breakdown field value of 1 MV/cm, without the use of additional field-plate termination structures.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110385"},"PeriodicalIF":4.6,"publicationDate":"2026-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-05DOI: 10.1016/j.mssp.2025.110391
Mohini Sawane , Mahanth Prasad , Murugan S. , Velmurugan K.
The piezoelectric MEMS sensor's market is experiencing rapid expansion, driven by self-powered operation, compact form factors, and scalable manufacturing. A novel fabrication technique using minimized fabrication processes and clean room resources were developed to produce cost-effective, compact and lightweight sensors. Microtunnel and through-hole cavity are etched into a silicon substrate and sealed with glass via anodic bonding. A PVDF-based diaphragm is bonded at the front side using vacuum-assisted mounting. Designed and developed PVDF based sensor variants (ST501–ST503 and ST1201–ST1203) were benchmarked against a Brüel & Kjær 4944A reference microphone using a B&K 4292-L loudspeaker and Noise Generator Type 1405. Their output closely matched the calibrated reference microphone tested for 1/3rd octave frequency range from 125Hz to 2 kHz, indicating high accuracy and reproducibility. Overall, the fabricated sensors exhibit reliable SPL measurement performance comparable to industry-standard microphone.
压电MEMS传感器的市场正在经历快速扩张，受自供电操作，紧凑的外形因素和可扩展的制造驱动。利用最小化的制造工艺和洁净室资源，开发了一种新型的制造技术，以生产成本低、结构紧凑、重量轻的传感器。微隧道和通孔腔蚀刻在硅衬底上，并通过阳极键合用玻璃密封。使用真空辅助安装的pvdf基隔膜粘合在前部。设计和开发的基于PVDF的传感器变体（ST501-ST503和ST1201-ST1203）与使用B&；K 4292-L扬声器和1405型噪声发生器的br el &；K ær 4944A参考麦克风进行基准测试。它们的输出与校准的参考麦克风在1/3倍频频率范围内（125Hz至2khz）进行测试，显示出高精度和再现性。总体而言，制造的传感器具有可靠的声压级测量性能，可与行业标准麦克风相媲美。
{"title":"Development of self-powered PVDF based MEMS sensors for sound pressure level measurements","authors":"Mohini Sawane , Mahanth Prasad , Murugan S. , Velmurugan K.","doi":"10.1016/j.mssp.2025.110391","DOIUrl":"10.1016/j.mssp.2025.110391","url":null,"abstract":"<div><div>The piezoelectric MEMS sensor's market is experiencing rapid expansion, driven by self-powered operation, compact form factors, and scalable manufacturing. A novel fabrication technique using minimized fabrication processes and clean room resources were developed to produce cost-effective, compact and lightweight sensors. Microtunnel and through-hole cavity are etched into a silicon substrate and sealed with glass via anodic bonding. A PVDF-based diaphragm is bonded at the front side using vacuum-assisted mounting. Designed and developed PVDF based sensor variants (ST501–ST503 and ST1201–ST1203) were benchmarked against a Brüel & Kjær 4944A reference microphone using a B&K 4292-L loudspeaker and Noise Generator Type 1405. Their output closely matched the calibrated reference microphone tested for 1/3rd octave frequency range from 125Hz to 2 kHz, indicating high accuracy and reproducibility. Overall, the fabricated sensors exhibit reliable SPL measurement performance comparable to industry-standard microphone.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110391"},"PeriodicalIF":4.6,"publicationDate":"2026-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-05DOI: 10.1016/j.mssp.2025.110400
Maxwell F.L. Garcia , Luis C.C. Arzuza , Allan J.M. Araújo , Rafael A. Raimundo , Gelmires A. Neves , Daniel A. Macedo , Francisco J.A. Loureiro , Romualdo R. Menezes
Electrochemical water splitting (EWS) into hydrogen and oxygen is essential for clean energy and a sustainable future. However, the most significant obstacle is the several anode oxygen evolution reaction (OER) processes, which limit practical applications. Nanofibers are one-dimensional materials with a large surface area, making them ideal to produce electrodes. By adjusting their secondary morphology (porosity, roughness, or grooves), their catalytic properties can be improved. This work emphasizes the production of porous ceramic fibers by solution blow spinning (SBS) method in conjunction with a cryogenic bath and phase separation by freeze-drying. Co3O4 Cryo-SBS nanofibers enhance the OER properties by altering their surface morphology, creating more porosity for better access to active sites and improved surface reactivity. The significant performance of the cryogenic nanofibers required an overpotentials of η10 = 320 mV in solution 1M KOH, whereas SBS-produced nanofibers typically require 353 mV for the same current density. At high current densities, Cryo-SBS nanofibers showed good performance for OER at an industrial scale. The overpotential values are like those of many metal oxides/hydroxides and reference materials like commercial IrO2 and RuO2. The results show that the modification of the nanofibers surface by freezing was effective in increasing the OER activity.
{"title":"Solution blow spun porous cobalt oxide nanofibers via cryogenic bath as oxygen evolution catalysts","authors":"Maxwell F.L. Garcia , Luis C.C. Arzuza , Allan J.M. Araújo , Rafael A. Raimundo , Gelmires A. Neves , Daniel A. Macedo , Francisco J.A. Loureiro , Romualdo R. Menezes","doi":"10.1016/j.mssp.2025.110400","DOIUrl":"10.1016/j.mssp.2025.110400","url":null,"abstract":"<div><div>Electrochemical water splitting (EWS) into hydrogen and oxygen is essential for clean energy and a sustainable future. However, the most significant obstacle is the several anode oxygen evolution reaction (OER) processes, which limit practical applications. Nanofibers are one-dimensional materials with a large surface area, making them ideal to produce electrodes. By adjusting their secondary morphology (porosity, roughness, or grooves), their catalytic properties can be improved. This work emphasizes the production of porous ceramic fibers by solution blow spinning (SBS) method in conjunction with a cryogenic bath and phase separation by freeze-drying. Co<sub>3</sub>O<sub>4</sub> Cryo-SBS nanofibers enhance the OER properties by altering their surface morphology, creating more porosity for better access to active sites and improved surface reactivity. The significant performance of the cryogenic nanofibers required an overpotentials of η<sub>10</sub> = 320 mV in solution 1M KOH, whereas SBS-produced nanofibers typically require 353 mV for the same current density. At high current densities, Cryo-SBS nanofibers showed good performance for OER at an industrial scale. The overpotential values are like those of many metal oxides/hydroxides and reference materials like commercial IrO<sub>2</sub> and RuO<sub>2</sub>. The results show that the modification of the nanofibers surface by freezing was effective in increasing the OER activity.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110400"},"PeriodicalIF":4.6,"publicationDate":"2026-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145895938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-05DOI: 10.1016/j.mssp.2025.110399
Fangzhou Wu , Yonglei Xing , Huijuan Liu , Xiaoyong Jin , Gang Ni
Peroxymonosulfate (PMS)–based advanced oxidation processes (AOPs) are promising for pollutant removal, whereas metal-doped carbons risk ion leaching. Here we report a metal-free selenium–nitrogen co-doped porous carbon (Se–N/C) that efficiently activates PMS for phenol (Ph) degradation. Selenium was chosen for its larger atomic radius and high polarizability, which modulate electronic structure and create active sites. Se–N/C achieved complete removal of parent Ph (Ph peak disappearance) within 10 min with a total organic carbon (TOC) reduction of 52 %, and a pseudo-first-order rate constant about twentyfold higher than nitrogen-doped carbon. Radical scavenging tests and electron paramagnetic resonance (EPR) confirm a dual pathway involving radical (O2•−) and non-radical (1O2) species. Density functional theory (DFT) indicates that co-doping tailors the electronic configuration, strengthens PMS adsorption (adsorption energy −3.07 eV), and enhances electron transfer. The catalyst remains active in the presence of common anions (SO42−, Cl−, NO3−, and H2PO4−) and humic acid, evidencing environmental tolerance. X-ray photoelectron spectroscopy and Raman spectroscopy identify graphitic nitrogen and C–Se–C as key centers, while selenium's antioxidative character supports cycling stability. This work provides a scalable, environmentally benign route for wastewater treatment and clarifies structure–activity relationships in PMS activation.
{"title":"Metal-free peroxymonosulfate activation for phenol degradation using selenium–nitrogen co-doped porous carbon nanosheets","authors":"Fangzhou Wu , Yonglei Xing , Huijuan Liu , Xiaoyong Jin , Gang Ni","doi":"10.1016/j.mssp.2025.110399","DOIUrl":"10.1016/j.mssp.2025.110399","url":null,"abstract":"<div><div>Peroxymonosulfate (PMS)–based advanced oxidation processes (AOPs) are promising for pollutant removal, whereas metal-doped carbons risk ion leaching. Here we report a metal-free selenium–nitrogen co-doped porous carbon (Se–N/C) that efficiently activates PMS for phenol (Ph) degradation. Selenium was chosen for its larger atomic radius and high polarizability, which modulate electronic structure and create active sites. Se–N/C achieved complete removal of parent Ph (Ph peak disappearance) within 10 min with a total organic carbon (TOC) reduction of 52 %, and a pseudo-first-order rate constant about twentyfold higher than nitrogen-doped carbon. Radical scavenging tests and electron paramagnetic resonance (EPR) confirm a dual pathway involving radical (O<sub>2</sub><sup>•−</sup>) and non-radical (<sup>1</sup>O<sub>2</sub>) species. Density functional theory (DFT) indicates that co-doping tailors the electronic configuration, strengthens PMS adsorption (adsorption energy −3.07 eV), and enhances electron transfer. The catalyst remains active in the presence of common anions (SO<sub>4</sub><sup>2−</sup>, Cl<sup>−</sup>, NO<sub>3</sub><sup>−</sup>, and H<sub>2</sub>PO<sub>4</sub><sup>−</sup>) and humic acid, evidencing environmental tolerance. X-ray photoelectron spectroscopy and Raman spectroscopy identify graphitic nitrogen and C–Se–C as key centers, while selenium's antioxidative character supports cycling stability. This work provides a scalable, environmentally benign route for wastewater treatment and clarifies structure–activity relationships in PMS activation.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110399"},"PeriodicalIF":4.6,"publicationDate":"2026-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-04DOI: 10.1016/j.mssp.2026.110407
MeiLin Wu , Tao Zhang , Hongmin Xue , ZhiLong Deng , TianTian Yang
Interface-type resistive switching (RS) devices are promising candidates for next-generation non-volatile memory and neuromorphic computing. However, conventional metal/Nb:SrTiO3(NSTO) structures often exhibit pronounced performance instability due to interface disorder, which complicates the investigation of underlying RS mechanisms and hinders device optimization. To address this challenge, this study utilizes the low lattice mismatch between the high-temperature superconductor Bi2Sr2CaCu2O8+x (Bi-2212) and NSTO. High-quality Bi-2212 superconducting films were epitaxially grown on NSTO substrates via pulsed laser deposition. Aberration-corrected scanning transmission electron microscopy confirms the formation of an atomically sharp and coherent interface. Electrical characterization reveals a distinctive “clockwise” RS hysteresis, where the device switches initially from a low-resistance state to a high-resistance state under positive bias, demonstrating excellent non-volatility and retention properties. Comparative current-voltage measurements under UV illumination, alongside electron energy loss spectrum and X-ray photoelectron spectroscopy analysis, suggest an RS mechanism driven by the electric-field-induced migration and subsequent accumulation of oxygen vacancies from the Bi-2212 layer toward the interface. This process induces a localized resistance increase (insulating transition) within the Bi-2212 layer near the interface, a mechanism distinct from the Schottky barrier modulation typically observed in metal/NSTO systems. Temperature-dependent measurements demonstrate stable RS operation over a broad temperature range (10–280 K). Notably, the switching ratio and a defined figure-of-merit are enhanced at lower temperatures, highlighting the structure's potential for cryogenic electronics applications. Analysis of the current transport mechanism indicates that Ohmic conduction dominates at low electric fields, while space-charge-limited conduction prevails at higher fields. This transition exhibits a clear temperature dependence. This work provides valuable experimental insights for developing high-performance RS devices based on coherent oxide hetero-interfaces.
{"title":"Resistive switching characteristics of a Bi-2212/NSTO heterostructure","authors":"MeiLin Wu , Tao Zhang , Hongmin Xue , ZhiLong Deng , TianTian Yang","doi":"10.1016/j.mssp.2026.110407","DOIUrl":"10.1016/j.mssp.2026.110407","url":null,"abstract":"<div><div>Interface-type resistive switching (RS) devices are promising candidates for next-generation non-volatile memory and neuromorphic computing. However, conventional metal/Nb:SrTiO<sub>3</sub>(NSTO) structures often exhibit pronounced performance instability due to interface disorder, which complicates the investigation of underlying RS mechanisms and hinders device optimization. To address this challenge, this study utilizes the low lattice mismatch between the high-temperature superconductor Bi<sub>2</sub>Sr<sub>2</sub>CaCu<sub>2</sub>O<sub>8+x</sub> (Bi-2212) and NSTO. High-quality Bi-2212 superconducting films were epitaxially grown on NSTO substrates via pulsed laser deposition. Aberration-corrected scanning transmission electron microscopy confirms the formation of an atomically sharp and coherent interface. Electrical characterization reveals a distinctive “clockwise” RS hysteresis, where the device switches initially from a low-resistance state to a high-resistance state under positive bias, demonstrating excellent non-volatility and retention properties. Comparative current-voltage measurements under UV illumination, alongside electron energy loss spectrum and X-ray photoelectron spectroscopy analysis, suggest an RS mechanism driven by the electric-field-induced migration and subsequent accumulation of oxygen vacancies from the Bi-2212 layer toward the interface. This process induces a localized resistance increase (insulating transition) within the Bi-2212 layer near the interface, a mechanism distinct from the Schottky barrier modulation typically observed in metal/NSTO systems. Temperature-dependent measurements demonstrate stable RS operation over a broad temperature range (10–280 K). Notably, the switching ratio and a defined figure-of-merit are enhanced at lower temperatures, highlighting the structure's potential for cryogenic electronics applications. Analysis of the current transport mechanism indicates that Ohmic conduction dominates at low electric fields, while space-charge-limited conduction prevails at higher fields. This transition exhibits a clear temperature dependence. This work provides valuable experimental insights for developing high-performance RS devices based on coherent oxide hetero-interfaces.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"205 ","pages":"Article 110407"},"PeriodicalIF":4.6,"publicationDate":"2026-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145939375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-03DOI: 10.1016/j.mssp.2025.110396
Renwei Guo , Yang Liu , Xianbin Zhang
Two-dimensional ferroelectric heterostructures demonstrate significant application potential in novel optoelectronic devices due to their unique spontaneous polarization and outstanding external field response characteristics. This work employs first-principles calculations to investigate the effects of applied electric fields and biaxial strain on the electronic and optical properties of α-In2Se3/HfS2 heterostructures. Calculations reveal that flipping the ferroelectric polarization of In2Se3 enables the heterostructure to switch between two distinct operating modes: the upward polarization mode exhibits high responsiveness to external fields, where a small electric field (−0.1 eV/Å) or strain (±2 %) induces II-I band structure transformation, 0–1eV bandgap tuning, and dynamic switching between the conduction band minimum and valence band maximum layer distribution; The downward polarization mode exhibits outstanding interference resistance, maintaining a stable Type-II band structure even under strong external perturbations (electric field ±0.5 eV/Å, strain −6 %–4 %). More intriguingly, the optical absorption intensity changes under identical strain conditions show completely opposite trends between the two polarization states, reflecting complex interactions between the ferroelectric field and strain effects. This study provides new insights into the external field regulation physics of ferroelectric heterostructures and points the way toward designing novel optoelectronic devices that combine high performance with multifunctionality.
二维铁电异质结构由于其独特的自发极化和出色的外场响应特性，在新型光电器件中具有重要的应用潜力。本文采用第一性原理计算研究了外加电场和双轴应变对α-In2Se3/HfS2异质结构的电子和光学性质的影响。计算表明，翻转In2Se3的铁电极化使异质结构在两种不同的工作模式之间切换：向上极化模式对外部场具有高响应性，其中小电场（−0.1 eV/Å）或应变（±2%）诱导i - i - i带结构转变，0-1eV带隙调谐，并在导带最小和价带最大层分布之间动态切换；下极化模式表现出优异的抗干扰性，即使在强的外部扰动（电场±0.5 eV/Å，应变−6% - 4%）下也能保持稳定的ii型能带结构。更有趣的是，在相同应变条件下，两种极化状态下的光吸收强度变化呈现完全相反的趋势，反映了铁电场与应变效应之间复杂的相互作用。该研究为铁电异质结构的外场调节物理提供了新的见解，并为设计高性能与多功能相结合的新型光电器件指明了方向。
{"title":"Switchable external field response properties induced by ferroelectric polarization in α-In2Se3/HfS2 heterostructures","authors":"Renwei Guo , Yang Liu , Xianbin Zhang","doi":"10.1016/j.mssp.2025.110396","DOIUrl":"10.1016/j.mssp.2025.110396","url":null,"abstract":"<div><div>Two-dimensional ferroelectric heterostructures demonstrate significant application potential in novel optoelectronic devices due to their unique spontaneous polarization and outstanding external field response characteristics. This work employs first-principles calculations to investigate the effects of applied electric fields and biaxial strain on the electronic and optical properties of α-In<sub>2</sub>Se<sub>3</sub>/HfS<sub>2</sub> heterostructures. Calculations reveal that flipping the ferroelectric polarization of In<sub>2</sub>Se<sub>3</sub> enables the heterostructure to switch between two distinct operating modes: the upward polarization mode exhibits high responsiveness to external fields, where a small electric field (−0.1 eV/Å) or strain (±2 %) induces II-I band structure transformation, 0–1eV bandgap tuning, and dynamic switching between the conduction band minimum and valence band maximum layer distribution; The downward polarization mode exhibits outstanding interference resistance, maintaining a stable Type-II band structure even under strong external perturbations (electric field ±0.5 eV/Å, strain −6 %–4 %). More intriguingly, the optical absorption intensity changes under identical strain conditions show completely opposite trends between the two polarization states, reflecting complex interactions between the ferroelectric field and strain effects. This study provides new insights into the external field regulation physics of ferroelectric heterostructures and points the way toward designing novel optoelectronic devices that combine high performance with multifunctionality.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"205 ","pages":"Article 110396"},"PeriodicalIF":4.6,"publicationDate":"2026-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145881141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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