Perovskite nanocrystals (PNCs) have emerged as a research focus in optoelectronics due to their exceptional optical properties, including tunable direct bandgaps, broad spectral absorption, and high chromatic purity. However, PNCs are susceptible to degradation under environmental humidity, sustained illumination, or elevated temperatures. This instability hinders their practical application in commercial optoelectronic devices. Covering the surface of PNCs with a layer of silica can enable their spatial immobilization and protect them from environmental influences, thereby maintaining their dispersibility and optical activity. In this work, CsPbBr3 PNCs were coated with mesoporous SiO2 via solid-state reaction, yielding a high photoluminescence quantum yield (PLQY) of 84.54%. To achieve the photoluminescence effect at relatively low temperatures, molten salts of K2CO3 and NaBr were added to seal the pores of silica. Notably, good dispersibility of the coated PNCs in poly methyl methacrylate (PMMA) enables the fabrication of flexible films, while their excellent luminescent properties allow for the preparation of anti-counterfeiting inks and light-emitting diode (LED) devices.
{"title":"Enhancing stability and luminescence of CsPbBr3 nanocrystals by mesoporous SiO2 nanoconfinement and molten salt flux assist","authors":"Wen Wang, Renjie Ru, Yu Fu, Shulin Duan, Haiqing Sun, Jianxu Ding, Rui Liu, Huiling Zhu, Xiaoyuan Zhan, Weiwei Zhang","doi":"10.1016/j.mssp.2026.110501","DOIUrl":"10.1016/j.mssp.2026.110501","url":null,"abstract":"<div><div>Perovskite nanocrystals (PNCs) have emerged as a research focus in optoelectronics due to their exceptional optical properties, including tunable direct bandgaps, broad spectral absorption, and high chromatic purity. However, PNCs are susceptible to degradation under environmental humidity, sustained illumination, or elevated temperatures. This instability hinders their practical application in commercial optoelectronic devices. Covering the surface of PNCs with a layer of silica can enable their spatial immobilization and protect them from environmental influences, thereby maintaining their dispersibility and optical activity. In this work, CsPbBr<sub>3</sub> PNCs were coated with mesoporous SiO<sub>2</sub> via solid-state reaction, yielding a high photoluminescence quantum yield (PLQY) of 84.54%. To achieve the photoluminescence effect at relatively low temperatures, molten salts of K<sub>2</sub>CO<sub>3</sub> and NaBr were added to seal the pores of silica. Notably, good dispersibility of the coated PNCs in poly methyl methacrylate (PMMA) enables the fabrication of flexible films, while their excellent luminescent properties allow for the preparation of anti-counterfeiting inks and light-emitting diode (LED) devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110501"},"PeriodicalIF":4.6,"publicationDate":"2026-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-05DOI: 10.1016/j.mssp.2026.110497
A.M. Ali , Ahmed E. Hannora , M.M. El-Desoky , Amany E. Harby
The mixed powders of KNbO3, Bi2O3 and Fe2O3 (mixed in a 1:1:1 M ratio) were prepared using the ball mill technique. XRD patterns and HR-TEM at room temperature were investigated. XRD analysis of the samples showed that four phases were present in the formations, which are BiFeO3, K2FeO4, KBi2Nb5O16 and Bi1.82K0.18O2.82. Dielectric permittivity was measured for the HT 8h sample as a function of both frequency & temperature. Two dielectric peaks appeared at 313 K and 618 K; the appearance of two dielectric peaks is attributed to the multiphase nature of the ceramic. The low-temperature anomaly (∼313 K) originates from local structural rearrangements and domain-wall dynamics within the perovskite-related ferroelectric network, whereas the high-temperature peak (∼618 K) corresponds to the effective ferroelectric–paraelectric transition near the Curie temperature of the composite system. A variety of electrical properties, including conductivity, modulus, and impedance, were examined throughout a broad frequency range (5 kHz – 1000 kHz) as well as temperature range (296 –675 K). The electric polarization vs. the electric (P–E) hysteresis loop investigations showed a 29.5 J/cm3 energy storage density at T = 423 K. The results of VSM showed the presence of weak ferromagnetic behavior for TH 8h sample at room temperature. A novel multifunctional material that simultaneously exhibits enhanced ferroelectric and ferromagnetic properties was achieved by combining KNbO3 and BiFeO3. The synergistic interaction between the two components aims to improve both dielectric and magnetic performances, making the composite promising for multifunctional and energy storage applications. Therefore, we believe that the TH 8h sample is a good candidate for applications involving capacitive energy storage.
{"title":"Multifunctional Ferroelectric–Ferromagnetic behavior and high energy storage density in ball-milled nanostructured KNbO3–Bi2O3–Fe2O3 for capacitive energy storage","authors":"A.M. Ali , Ahmed E. Hannora , M.M. El-Desoky , Amany E. Harby","doi":"10.1016/j.mssp.2026.110497","DOIUrl":"10.1016/j.mssp.2026.110497","url":null,"abstract":"<div><div>The mixed powders of KNbO<sub>3</sub>, Bi<sub>2</sub>O<sub>3</sub> and Fe<sub>2</sub>O<sub>3</sub> (mixed in a 1:1:1 M ratio) were prepared using the ball mill technique. XRD patterns and HR-TEM at room temperature were investigated. XRD analysis of the samples showed that four phases were present in the formations, which are BiFeO<sub>3</sub>, K<sub>2</sub>FeO<sub>4</sub>, KBi<sub>2</sub>Nb<sub>5</sub>O<sub>16</sub> and Bi<sub>1.82</sub>K<sub>0.18</sub>O<sub>2.82</sub>. Dielectric permittivity was measured for the HT 8h sample as a function of both frequency & temperature. Two dielectric peaks appeared at 313 K and 618 K; the appearance of two dielectric peaks is attributed to the multiphase nature of the ceramic. The low-temperature anomaly (∼313 K) originates from local structural rearrangements and domain-wall dynamics within the perovskite-related ferroelectric network, whereas the high-temperature peak (∼618 K) corresponds to the effective ferroelectric–paraelectric transition near the Curie temperature of the composite system. A variety of electrical properties, including conductivity, modulus, and impedance, were examined throughout a broad frequency range (5 kHz – 1000 kHz) as well as temperature range (296 –675 K). The electric polarization vs. the electric (P–E) hysteresis loop investigations showed a 29.5 J/cm<sup>3</sup> energy storage density at T = 423 K. The results of VSM showed the presence of weak ferromagnetic behavior for TH 8h sample at room temperature. A novel multifunctional material that simultaneously exhibits enhanced ferroelectric and ferromagnetic properties was achieved by combining KNbO<sub>3</sub> and BiFeO<sub>3</sub>. The synergistic interaction between the two components aims to improve both dielectric and magnetic performances, making the composite promising for multifunctional and energy storage applications. Therefore, we believe that the TH 8h sample is a good candidate for applications involving capacitive energy storage.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110497"},"PeriodicalIF":4.6,"publicationDate":"2026-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-05DOI: 10.1016/j.mssp.2026.110470
Qingyu Hou , Hailan Li , Wen Ma , Zhenchao Xu
The identification of photovoltaic infrared effect materials is pivotal for realising highly efficient thermophotovoltaic devices. Secondly, this study aims to resolve the ferromagnetic properties erroneously reported in prior research [International Journal of Hydrogen Energy 60 (2024) 402–414] by demonstrating the antiferromagnetic nature of the Zn34HiMgO36 (0 0 1) monolayer system under unstrained neutral conditions. Employing the Generalised Gradient Approximation (GGA + U) plane-wave super-soft pseudopotential within the spin density functional theory framework, this study investigates the influence of strain on the thermophotovoltaic response of Zn-vacancy and H-interstitial ZnO(0 0 1) monolayers: Mg. Dynamic analysis, quantum mechanical minimum energy principle, and differential charge density distribution studies indicate that the Zn34HiMgO36 (0 0 1) monolayer system exhibits relatively good stability under −6% compressive strain. Spin density, Bader charge, and density of states distribution investigations reveal that both unstrained and tensile/compressive strains induce antiferromagnetism in the Zn34HiMgO36 (0 0 1) monolayer system exhibits antiferromagnetism regardless of strain state. The antiferromagnetic mechanism originates from the polarised O1-1 2p state ions near Zn vacancies and O1-2 2p states, both possessing dual attributes of localised electrons (acceptors) and itinerant electrons (donors). Hybridised double exchange interactions exist between these localised electrons. Trapping effects and carrier lifetime studies reveal that the Zn34HiMgO36(0 0 1) monolayer system under −6% compressive strain exhibits the longest carrier lifetime. Absorption coefficient and reflectance coefficient investigations indicate that the Zn34HiMgO36(0 0 1) monolayer system under −6% compressive strain demonstrates the most favourable infrared photovoltaic properties as a thermophotovoltaic material.
{"title":"First-principles study of strain effects on Zn vacancies and H-interstitial ZnO(001) monolayers: Mg-induced photovoltaic and antiferromagnetic behaviour","authors":"Qingyu Hou , Hailan Li , Wen Ma , Zhenchao Xu","doi":"10.1016/j.mssp.2026.110470","DOIUrl":"10.1016/j.mssp.2026.110470","url":null,"abstract":"<div><div>The identification of photovoltaic infrared effect materials is pivotal for realising highly efficient thermophotovoltaic devices. Secondly, this study aims to resolve the ferromagnetic properties erroneously reported in prior research [International Journal of Hydrogen Energy 60 (2024) 402–414] by demonstrating the antiferromagnetic nature of the Zn<sub>34</sub>H<sub>i</sub>MgO<sub>36</sub> (0 0 1) monolayer system under unstrained neutral conditions. Employing the Generalised Gradient Approximation (GGA + U) plane-wave super-soft pseudopotential within the spin density functional theory framework, this study investigates the influence of strain on the thermophotovoltaic response of Zn-vacancy and H-interstitial ZnO(0 0 1) monolayers: Mg. Dynamic analysis, quantum mechanical minimum energy principle, and differential charge density distribution studies indicate that the Zn<sub>34</sub>H<sub>i</sub>MgO<sub>36</sub> (0 0 1) monolayer system exhibits relatively good stability under −6% compressive strain. Spin density, Bader charge, and density of states distribution investigations reveal that both unstrained and tensile/compressive strains induce antiferromagnetism in the Zn<sub>34</sub>H<sub>i</sub>MgO<sub>36</sub> (0 0 1) monolayer system exhibits antiferromagnetism regardless of strain state. The antiferromagnetic mechanism originates from the polarised O<sup>1-</sup>1 2p state ions near Zn vacancies and O<sup>1-</sup>2 2p states, both possessing dual attributes of localised electrons (acceptors) and itinerant electrons (donors). Hybridised double exchange interactions exist between these localised electrons. Trapping effects and carrier lifetime studies reveal that the Zn<sub>34</sub>H<sub>i</sub>MgO<sub>36</sub>(0 0 1) monolayer system under −6% compressive strain exhibits the longest carrier lifetime. Absorption coefficient and reflectance coefficient investigations indicate that the Zn<sub>34</sub>H<sub>i</sub>MgO<sub>36</sub>(0 0 1) monolayer system under −6% compressive strain demonstrates the most favourable infrared photovoltaic properties as a thermophotovoltaic material.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110470"},"PeriodicalIF":4.6,"publicationDate":"2026-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146189747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-05DOI: 10.1016/j.mssp.2026.110480
Menglei Wang , Kun Wang , Qixin Liu , Weili Zhang , Ruchen Zhao , Lei Zhang , Yuchuan Shao
Aluminum oxide (Al2O3) films, as a key coating material for high-power ultraviolet (UV) laser systems, are vital to the stability of laser outputs owing to their favorable optical performance and damage resistance. In this study, Al2O3 films were fabricated using electron-beam evaporation (EB) and ion-beam-assisted deposition electron-beam (IBAD-EB), followed by high-temperature annealing. Results show that the IBAD-EB process—by employing ion-beam assistance—increased film density and simultaneously introduced oxygen, whose ionization improved the stoichiometry and reduced absorption, thus resulting in a damage threshold of 30.9 kW/cm2 for Al2O3 single-layer films, i.e., an increase by 3.25 times compared with EB films (9.5 kW/cm2). After annealing, the EB-deposited Al2O3 films became fully oxidized, which increased their damage threshold to 27.9 kW/cm2 (a 2.9 folds increase), whereas the dense IBAD-EB films showed minimal change. In Al2O3/SiO2 antireflection coatings, annealing increased the damage threshold by 5.62 folds (to 55.6 kW/cm2) and 3.81 folds (to 36.2 kW/cm2) for the films fabricated via EB and IBAD-EB, respectively. This study elucidates the mechanisms by which ion assistance and annealing optimize the damage performance of Al2O3 films under high-repetition-rate UV picosecond-laser irradiation, thus providing both theoretical and experimental guidance for the process design of high-repetition-rate UV-laser-coating devices.
{"title":"Damage-threshold performance of Al2O3 films under high-repetition-rate 266 nm ultraviolet picosecond-laser irradiation","authors":"Menglei Wang , Kun Wang , Qixin Liu , Weili Zhang , Ruchen Zhao , Lei Zhang , Yuchuan Shao","doi":"10.1016/j.mssp.2026.110480","DOIUrl":"10.1016/j.mssp.2026.110480","url":null,"abstract":"<div><div>Aluminum oxide (Al<sub>2</sub>O<sub>3</sub>) films, as a key coating material for high-power ultraviolet (UV) laser systems, are vital to the stability of laser outputs owing to their favorable optical performance and damage resistance. In this study, Al<sub>2</sub>O<sub>3</sub> films were fabricated using electron-beam evaporation (EB) and ion-beam-assisted deposition electron-beam (IBAD-EB), followed by high-temperature annealing. Results show that the IBAD-EB process—by employing ion-beam assistance—increased film density and simultaneously introduced oxygen, whose ionization improved the stoichiometry and reduced absorption, thus resulting in a damage threshold of 30.9 kW/cm<sup>2</sup> for Al<sub>2</sub>O<sub>3</sub> single-layer films, i.e., an increase by 3.25 times compared with EB films (9.5 kW/cm<sup>2</sup>). After annealing, the EB-deposited Al<sub>2</sub>O<sub>3</sub> films became fully oxidized, which increased their damage threshold to 27.9 kW/cm<sup>2</sup> (a 2.9 folds increase), whereas the dense IBAD-EB films showed minimal change. In Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> antireflection coatings, annealing increased the damage threshold by 5.62 folds (to 55.6 kW/cm<sup>2</sup>) and 3.81 folds (to 36.2 kW/cm<sup>2</sup>) for the films fabricated via EB and IBAD-EB, respectively. This study elucidates the mechanisms by which ion assistance and annealing optimize the damage performance of Al<sub>2</sub>O<sub>3</sub> films under high-repetition-rate UV picosecond-laser irradiation, thus providing both theoretical and experimental guidance for the process design of high-repetition-rate UV-laser-coating devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110480"},"PeriodicalIF":4.6,"publicationDate":"2026-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-05DOI: 10.1016/j.mssp.2026.110499
Xiaoyu Fan , Ziwei Chen , Yue Yao
NO2 is a pervasive pollutant gas that poses significant threats to both crop growth and human health. MoS2 gas sensors are still plagued by insufficient sensitivity in room-temperature (RT), complex environments, such as greenhouses and industrial settings. The construction of heterojunction composites has been demonstrated to be an effective strategy for enhancing the performance of MoS2. This study successfully fabricated MoS2/MoO2 and MoS2/MoO3 multiphase heterojunctions (labeled MoO-20) with three-dimensional nanoflower structures via a simple air calcination method. In dynamic testing, the material achieved an actual detection limit of 2.2 ppb for NO2 (with a response value of 8.79%), while its theoretical detection limit reached as low as 0.82 ppb. Concurrently, MoO-20 has the advantage of rapid response/recovery, with the response and recovery times of 17/11 s to 5 ppm NO2. Furthermore, the sensor exhibits noteworthy repeatability, selectivity, and long-term stability. Analyses using HRTEM-elemental mapping, XPS, UV-vis DRS, Raman, and UPS reveal that the enhanced gas-sensing performance is due to the multiphase heterojunction's abundant active sites and optimized internal electric field. The multiphase heterojunction retains both the high conductivity and reaction activity of the MoS2 component and the strong gas adsorption and catalytic ability of the MoO3 component. DFT calculations confirm that multiphase heterojunction interfacial charge redistribution and optimized adsorption geometry significantly enhance the adsorption strength and charge transfer capability for NO2. This progress has good application prospects in the next-generation intelligent greenhouses and industrial monitoring systems.
{"title":"A high-performance room-temperature NO2 gas sensor based on MoS2/MoOx multiphase heterojunction: Achieving fast response and low detection limit","authors":"Xiaoyu Fan , Ziwei Chen , Yue Yao","doi":"10.1016/j.mssp.2026.110499","DOIUrl":"10.1016/j.mssp.2026.110499","url":null,"abstract":"<div><div>NO<sub>2</sub> is a pervasive pollutant gas that poses significant threats to both crop growth and human health. MoS<sub>2</sub> gas sensors are still plagued by insufficient sensitivity in room-temperature (RT), complex environments, such as greenhouses and industrial settings. The construction of heterojunction composites has been demonstrated to be an effective strategy for enhancing the performance of MoS<sub>2</sub>. This study successfully fabricated MoS<sub>2</sub>/MoO<sub>2</sub> and MoS<sub>2</sub>/MoO<sub>3</sub> multiphase heterojunctions (labeled MoO-20) with three-dimensional nanoflower structures via a simple air calcination method. In dynamic testing, the material achieved an actual detection limit of 2.2 ppb for NO<sub>2</sub> (with a response value of 8.79%), while its theoretical detection limit reached as low as 0.82 ppb. Concurrently, MoO-20 has the advantage of rapid response/recovery, with the response and recovery times of 17/11 s to 5 ppm NO<sub>2</sub>. Furthermore, the sensor exhibits noteworthy repeatability, selectivity, and long-term stability. Analyses using HRTEM-elemental mapping, XPS, UV-vis DRS, Raman, and UPS reveal that the enhanced gas-sensing performance is due to the multiphase heterojunction's abundant active sites and optimized internal electric field. The multiphase heterojunction retains both the high conductivity and reaction activity of the MoS<sub>2</sub> component and the strong gas adsorption and catalytic ability of the MoO<sub>3</sub> component. DFT calculations confirm that multiphase heterojunction interfacial charge redistribution and optimized adsorption geometry significantly enhance the adsorption strength and charge transfer capability for NO<sub>2</sub>. This progress has good application prospects in the next-generation intelligent greenhouses and industrial monitoring systems.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110499"},"PeriodicalIF":4.6,"publicationDate":"2026-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-04DOI: 10.1016/j.mssp.2026.110494
Yudong Li , Han Gao , Xuanling Zhou, Xinbo Zou
{"title":"GaN-based high output voltage binary and ternary digital components achieved by neutral beam etching","authors":"Yudong Li , Han Gao , Xuanling Zhou, Xinbo Zou","doi":"10.1016/j.mssp.2026.110494","DOIUrl":"10.1016/j.mssp.2026.110494","url":null,"abstract":"","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110494"},"PeriodicalIF":4.6,"publicationDate":"2026-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146189798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-04DOI: 10.1016/j.mssp.2026.110467
Shaojie Peng, Menglin Li, Yuxuan Du, Tao Ma, Shengyong Wang, Huan Liu
Indium tin oxide (ITO) is one of the most widely used transparent conducting oxides (TCOs) in optoelectronic devices. However, most studies and evaluation models focus only on the visible spectrum, while broadband (400–2500 nm) applications, such as quantum dot (QD) detectors and infrared photovoltaics, are limited by the low infrared transmittance of ITO. In this work, we propose a new figure of merit (FOM) suitable for broadband evaluation to overcome the limitations of the conventional Haacke model. Orthogonal experimental design was employed to systematically investigate the influence of sputtering power, time, and pressure on the broadband optical and electrical properties of ITO films. The optimized ITO electrode, fabricated entirely at room temperature, exhibited an average transmittance of 87.4 % and a sheet resistance of 49.8 Ω/sq across the 400–2500 nm range. Drude–Lorentz analysis revealed that the balance between free-carrier absorption and bound-state transitions at ∼1031 nm plays a critical role in the broadband response. To demonstrate practical applicability, the optimized ITO was integrated into a PbS QD detector, achieving an external quantum efficiency (EQE) of 47 % and a responsivity of 0.4 A/W at 1320 nm. These results highlight a practical route for developing broadband transparent electrodes compatible with thermally sensitive optoelectronic devices.
氧化铟锡（ITO）是光电器件中应用最广泛的透明导电氧化物之一。然而，大多数研究和评估模型只关注可见光谱，而宽带（400-2500 nm）应用，如量子点（QD）探测器和红外光伏，受到ITO低红外透过率的限制。在这项工作中，我们提出了一种新的适用于宽带评估的价值图（FOM），以克服传统哈克模型的局限性。采用正交实验设计，系统研究了溅射功率、溅射时间和溅射压力对ITO薄膜宽带光电性能的影响。优化后的ITO电极完全在室温下制备，在400-2500 nm范围内的平均透射率为87.4%，片电阻为49.8 Ω/sq。德鲁德-洛伦兹分析表明，自由载流子吸收和束缚态跃迁之间的平衡在~ 1031 nm处对宽带响应起着关键作用。为了证明其实用性，将优化后的ITO集成到PbS QD探测器中，在1320 nm处实现了47%的外量子效率（EQE）和0.4 a /W的响应率。这些结果为开发与热敏光电器件兼容的宽带透明电极提供了一条实用途径。
{"title":"Research on the development and application of 400–2500 nm broadband transparent conductive ITO electrodes","authors":"Shaojie Peng, Menglin Li, Yuxuan Du, Tao Ma, Shengyong Wang, Huan Liu","doi":"10.1016/j.mssp.2026.110467","DOIUrl":"10.1016/j.mssp.2026.110467","url":null,"abstract":"<div><div>Indium tin oxide (ITO) is one of the most widely used transparent conducting oxides (TCOs) in optoelectronic devices. However, most studies and evaluation models focus only on the visible spectrum, while broadband (400–2500 nm) applications, such as quantum dot (QD) detectors and infrared photovoltaics, are limited by the low infrared transmittance of ITO. In this work, we propose a new figure of merit (FOM) suitable for broadband evaluation to overcome the limitations of the conventional Haacke model. Orthogonal experimental design was employed to systematically investigate the influence of sputtering power, time, and pressure on the broadband optical and electrical properties of ITO films. The optimized ITO electrode, fabricated entirely at room temperature, exhibited an average transmittance of 87.4 % and a sheet resistance of 49.8 <em>Ω/sq</em> across the 400–2500 nm range. Drude–Lorentz analysis revealed that the balance between free-carrier absorption and bound-state transitions at ∼1031 nm plays a critical role in the broadband response. To demonstrate practical applicability, the optimized ITO was integrated into a PbS QD detector, achieving an external quantum efficiency (EQE) of 47 % and a responsivity of 0.4 A/W at 1320 nm. These results highlight a practical route for developing broadband transparent electrodes compatible with thermally sensitive optoelectronic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110467"},"PeriodicalIF":4.6,"publicationDate":"2026-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-03DOI: 10.1016/j.mssp.2026.110483
Yanpu Li , Zelong Qing , Shiyu Cao , Bo Liu , Yi Zhang
Laser-induced modification slicing has emerged as a promising technique for efficient and low-loss manufacturing of SiC wafers by leveraging controlled crack propagation. However, precise control of material loss remains challenging, especially for conductive 4H-SiC, where a ∼4° offset between the crystal plane and wafer surface triggers inclined crack propagation. Additionally, the laser self-focusing often induces high-loss multilayer structures, further complicating material removal. This study develops a low-loss slicing process for conductive 4H-SiC wafers using a multi-focus picosecond laser, with a systematic study on the laser parameters, scanning strategies, and crack behavior. Beginning with single-line scanning experiments, the influence of laser self-focusing on the laser modified structures was analyzed, revealing how pulse energy and scanning velocity drive the transition of modified structures from discrete spots to multi-layer clusters. Subsequently, area-scanning experiments were conducted to study the effects of scanning track interval, pulse energy, and scanning velocity on transverse crack propagation and inter-track coupling. By implementing a four-focus laser array combined with a multiple scanning strategy, the connectivity of transverse cracks was significantly improved, thereby substantially reducing the stress required for separation. By optimizing the number of scanning times, a slicing outcome was achieved with a tensile stress of 0.7 MPa and a separated surface roughness below 2 μm. After polishing, the total material loss was controlled to less than 50 μm. This work provides a reliable technical and theoretical foundation for low-loss, high-quality SiC wafer slicing.
{"title":"Low-loss and high-quality slicing of conductive 4H-SiC wafers with a multi-focus picosecond laser","authors":"Yanpu Li , Zelong Qing , Shiyu Cao , Bo Liu , Yi Zhang","doi":"10.1016/j.mssp.2026.110483","DOIUrl":"10.1016/j.mssp.2026.110483","url":null,"abstract":"<div><div>Laser-induced modification slicing has emerged as a promising technique for efficient and low-loss manufacturing of SiC wafers by leveraging controlled crack propagation. However, precise control of material loss remains challenging, especially for conductive 4H-SiC, where a ∼4° offset between the crystal plane and wafer surface triggers inclined crack propagation. Additionally, the laser self-focusing often induces high-loss multilayer structures, further complicating material removal. This study develops a low-loss slicing process for conductive 4H-SiC wafers using a multi-focus picosecond laser, with a systematic study on the laser parameters, scanning strategies, and crack behavior. Beginning with single-line scanning experiments, the influence of laser self-focusing on the laser modified structures was analyzed, revealing how pulse energy and scanning velocity drive the transition of modified structures from discrete spots to multi-layer clusters. Subsequently, area-scanning experiments were conducted to study the effects of scanning track interval, pulse energy, and scanning velocity on transverse crack propagation and inter-track coupling. By implementing a four-focus laser array combined with a multiple scanning strategy, the connectivity of transverse cracks was significantly improved, thereby substantially reducing the stress required for separation. By optimizing the number of scanning times, a slicing outcome was achieved with a tensile stress of 0.7 MPa and a separated surface roughness below 2 μm. After polishing, the total material loss was controlled to less than 50 μm. This work provides a reliable technical and theoretical foundation for low-loss, high-quality SiC wafer slicing.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110483"},"PeriodicalIF":4.6,"publicationDate":"2026-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Fully Depleted Silicon-On-Insulator (FD-SOI) technology continues to evolve, driven by the need to enhance carrier mobility through innovative channel engineering. This involves, in particular, replacing silicon with SiGe alloys, and introducing controlled compressive strain to improve the performances of both nMOS and pMOS transistors. However, conventional approaches employing pseudo-substrates on silicon remain constrained by Ge concentrations not exceeding 30 % and dislocation densities typically around which limit further performance gains. In this study, we address these limitations by developing a methodology aimed at increasing the Ge concentration in SiGe layers while suppressing defect formation. Our approach combines epitaxial growth with subsequent Ge condensation on SOI substrates, implemented on 300 mm wafer and under industrial process conditions. We demonstrate that initiating the process with a ∼20 nm-thick epitaxial SiGe layer containing ∼20 % Ge is critical for ensuring high structural quality during the high temperature condensation step. This optimized strategy leads to the formation of Ge-rich SiGe pseudo-substrates exhibiting drastically reduced dislocation densities. These layers are fully strained and are able to support high temperature annealing (∼1060 °C needed for the subsequent CMOS fabrication step) without any relaxation.
The resulting ultra-thin, defect-free, and fully strained SiGe layers exhibit high Ge content and superior optoelectronic quality, opening new opportunities for the integration of advanced SiGe channels in next-generation FD-SOI technology.
{"title":"Advanced process for the fabrication of defect-free Ge-rich SiGe on insulator layers","authors":"Anne-Flore Mallet , Olivier Gourhant , Adam Arette-Hourquet , Mansour Aouassa , Christophe Duluard , Romain Duru , Luc Favre , Isabelle Berbezier","doi":"10.1016/j.mssp.2026.110442","DOIUrl":"10.1016/j.mssp.2026.110442","url":null,"abstract":"<div><div>Fully Depleted Silicon-On-Insulator (FD-SOI) technology continues to evolve, driven by the need to enhance carrier mobility through innovative channel engineering. This involves, in particular, replacing silicon with SiGe alloys, and introducing controlled compressive strain to improve the performances of both nMOS and pMOS transistors. However, conventional approaches employing <span><math><mrow><msub><mrow><mi>S</mi><mi>i</mi></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mrow><mi>G</mi><mi>e</mi></mrow><mi>x</mi></msub></mrow></math></span> pseudo-substrates on silicon remain constrained by Ge concentrations not exceeding 30 % and dislocation densities typically around <span><math><mrow><msup><mn>10</mn><mn>6</mn></msup><msup><mrow><mi>c</mi><mi>m</mi></mrow><mrow><mo>−</mo><mn>2</mn></mrow></msup></mrow></math></span> which limit further performance gains. In this study, we address these limitations by developing a methodology aimed at increasing the Ge concentration in SiGe layers while suppressing defect formation. Our approach combines epitaxial growth with subsequent Ge condensation on SOI substrates, implemented on 300 mm wafer and under industrial process conditions. We demonstrate that initiating the process with a ∼20 nm-thick epitaxial SiGe layer containing ∼20 % Ge is critical for ensuring high structural quality during the high temperature condensation step. This optimized strategy leads to the formation of Ge-rich SiGe pseudo-substrates exhibiting drastically reduced dislocation densities. These layers are fully strained and are able to support high temperature annealing (∼1060 °C needed for the subsequent CMOS fabrication step) without any relaxation.</div><div>The resulting ultra-thin, defect-free, and fully strained SiGe layers exhibit high Ge content and superior optoelectronic quality, opening new opportunities for the integration of advanced SiGe channels in next-generation FD-SOI technology.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110442"},"PeriodicalIF":4.6,"publicationDate":"2026-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-02DOI: 10.1016/j.mssp.2026.110468
Yu-Hsuan Hsiao, Da-Jin Dai, Liuwen Chang
The present study investigates epitaxial growth of Cu2O on Cu through electrochemical deposition using a high-throughput method. It used a combinatorial substrate approach involving polycrystalline Cu substrates followed by verification tests involving single-crystal substrates to clarify the effects of electrolyte composition, pH, current density, and substrate orientation on the electroepitaxy of Cu2O. The electron backscatter diffraction technique was used to analyze both the orientation and crystallinity of Cu2O. The results reveal that electrolyte pH, current density, and substrate orientation are all critical factors governing Cu2O electroepitaxy. Two reported epitaxial orientation relationships (ORs), (001)Cu2O//(001)Cu, [010]Cu2O//[010]Cu and (111)Cu2O//(111)Cu, [1–10]Cu2O//[0–11]Cu, were associated with a new OR of (111)Cu2O//(001)Cu, [1–10]Cu2O//[1–10]Cu. Epilayers with (111) and (110) orientations, free of twin variants and secondary orientations, were obtained in two electrolytes at 0.25 mA/cm2 in accordance with the established OR maps. Among these, the (110) Cu2O epilayers exhibited the highest crystallinity, with a rocking curve FWHM of 0.97–1.05°, surpassing all previously reported electrochemically deposited epilayers. Furthermore, the correlation established between EBSD-derived average orientation spread and XRD rocking curve FWHM demonstrates that EBSD can assess not only the orientations of the substrate and epilayer but also their crystallinity.
{"title":"High-throughput investigation of electroepitaxial growth of Cu2O on Cu substrates","authors":"Yu-Hsuan Hsiao, Da-Jin Dai, Liuwen Chang","doi":"10.1016/j.mssp.2026.110468","DOIUrl":"10.1016/j.mssp.2026.110468","url":null,"abstract":"<div><div>The present study investigates epitaxial growth of Cu<sub>2</sub>O on Cu through electrochemical deposition using a high-throughput method. It used a combinatorial substrate approach involving polycrystalline Cu substrates followed by verification tests involving single-crystal substrates to clarify the effects of electrolyte composition, pH, current density, and substrate orientation on the electroepitaxy of Cu<sub>2</sub>O. The electron backscatter diffraction technique was used to analyze both the orientation and crystallinity of Cu<sub>2</sub>O. The results reveal that electrolyte pH, current density, and substrate orientation are all critical factors governing Cu<sub>2</sub>O electroepitaxy. Two reported epitaxial orientation relationships (ORs), (001)<sub>Cu2O</sub>//(001)<sub>Cu</sub>, [010]<sub>Cu2O</sub>//[010]<sub>Cu</sub> and (111)<sub>Cu2O</sub>//(111)<sub>Cu</sub>, [1–10]<sub>Cu2O</sub>//[0–11]<sub>Cu</sub>, were associated with a new OR of (111)<sub>Cu2O</sub>//(001)<sub>Cu</sub>, [1–10]<sub>Cu2O</sub>//[1–10]<sub>Cu</sub>. Epilayers with (111) and (110) orientations, free of twin variants and secondary orientations, were obtained in two electrolytes at 0.25 mA/cm<sup>2</sup> in accordance with the established OR maps. Among these, the (110) Cu<sub>2</sub>O epilayers exhibited the highest crystallinity, with a rocking curve FWHM of 0.97–1.05°, surpassing all previously reported electrochemically deposited epilayers. Furthermore, the correlation established between EBSD-derived average orientation spread and XRD rocking curve FWHM demonstrates that EBSD can assess not only the orientations of the substrate and epilayer but also their crystallinity.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110468"},"PeriodicalIF":4.6,"publicationDate":"2026-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
扫码关注我们
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号