Pub Date : 2024-10-29DOI: 10.1016/j.mssp.2024.109050
This study incorpates Density Functional Theory (DFT) to investigate the influence of copper (Cu) and Iron (Fe) atom passivation on Boron Nitride Nanoribbons (ZBNRs). Through meticulous analysis, we explore their electronic and stuctrural properties, particularly focusing on edge states. 2Fe ZBNR shows the highest stability (−9.12eV) as compared other configurations. Calculation reveals that increased stability with escalating atom concentration. Band structure and Density of States (DOS) are examined, along with the viability of passivated ZBNRs as a application of metal interconnects. 1Fe ZBNR gives the highest Fermi energy((-4.46eV). Using different configurations of ZBNRs, we model nanoscale interconnect application. We analyze their efficacy interms of delay and other parameters. 1Cu ZBNR shows lowest interconnect delay (26.3us) as compared to other configurations. This exploration contributes to understanding the potential of BNRs in nanoelectronics interconnect.
{"title":"Optimized Cu/Fe doped Boron Nitride Nanoribbons as nanoscale interconnect: DFT Investigation","authors":"","doi":"10.1016/j.mssp.2024.109050","DOIUrl":"10.1016/j.mssp.2024.109050","url":null,"abstract":"<div><div>This study incorpates Density Functional Theory (DFT) to investigate the influence of copper (Cu) and Iron (Fe) atom passivation on Boron Nitride Nanoribbons (ZBNRs). Through meticulous analysis, we explore their electronic and stuctrural properties, particularly focusing on edge states. 2Fe ZBNR shows the highest stability (−9.12eV) as compared other configurations. Calculation reveals that increased stability with escalating atom concentration. Band structure and Density of States (DOS) are examined, along with the viability of passivated ZBNRs as a application of metal interconnects. 1Fe ZBNR gives the highest Fermi energy((-4.46eV). Using different configurations of ZBNRs, we model nanoscale interconnect application. We analyze their efficacy interms of delay and other parameters. 1Cu ZBNR shows lowest interconnect delay (26.3us) as compared to other configurations. This exploration contributes to understanding the potential of BNRs in nanoelectronics interconnect.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":null,"pages":null},"PeriodicalIF":4.2,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142537236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-29DOI: 10.1016/j.mssp.2024.109039
The reverse dark current mechanism of a p-CdTe/n-CdTe/n+-Si vertical diode-type gamma ray detector, fabricated by growing epitaxial CdTe on Si substrates was studied and corelated with the detector's gamma detection properties. The detector dark current deviated from the Shockley-Reed-Hall (SRH) generation mechanism but showed tunneling was the dominant process. The dark current was strongly controlled by the dislocation densities and their distribution in the CdTe epilayer. Detectors that exhibited poor gamma detection properties had high dislocation densities and had large and nearly temperature independent dark currents. Good working detectors, on the other hand, showed small dark currents with a clear temperature dependence. These working detectors, fabricated with optimized crystal growth techniques, had a dislocation density nearly an order of magnitude lower than those of non-working or poorly working detectors.
{"title":"Correlation of reverse dark current-voltage characteristics and gamma detection properties of a p-CdTe/n-CdTe/n+-Si vertical diode-type radiation detector","authors":"","doi":"10.1016/j.mssp.2024.109039","DOIUrl":"10.1016/j.mssp.2024.109039","url":null,"abstract":"<div><div>The reverse dark current mechanism of a p-CdTe/n-CdTe/n<sup>+</sup>-Si vertical diode-type gamma ray detector, fabricated by growing epitaxial CdTe on Si substrates was studied and corelated with the detector's gamma detection properties. The detector dark current deviated from the Shockley-Reed-Hall (SRH) generation mechanism but showed tunneling was the dominant process. The dark current was strongly controlled by the dislocation densities and their distribution in the CdTe epilayer. Detectors that exhibited poor gamma detection properties had high dislocation densities and had large and nearly temperature independent dark currents. Good working detectors, on the other hand, showed small dark currents with a clear temperature dependence. These working detectors, fabricated with optimized crystal growth techniques, had a dislocation density nearly an order of magnitude lower than those of non-working or poorly working detectors.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":null,"pages":null},"PeriodicalIF":4.2,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142537161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-29DOI: 10.1016/j.mssp.2024.109040
In recent years, two-dimensional (2D) photocatalytic materials have garnered significant attention from researchers because of their high specific surface area and numerous active sites for photocatalytic reactions. However, many 2D photocatalytic materials exhibit low photogenerated carrier mobility and easy recombination of photogenerated electron-hole pairs, leading to poor photocatalytic performance. In this study, we propose and investigate AgAlP2Se6 monolayers theoretically for the first time. Through first-principle calculations, we find that AgAlP2Se6 monolayers possess good mechanical, thermal, and kinetic stabilities and exhibit a high carrier utilization rate. The electron mobility of the AgAlP2Se6 monolayer is 14.77 times higher than the hole mobility. This significant mobility difference helps to inhibit the recombination of electron-hole pairs, thereby improving photocatalytic efficiency. The solar-to-hydrogen conversion efficiency (STH) reaches 18.10 %, significantly exceeding the critical value (10 %) for the commercial application of photocatalytic water decomposition. Therefore, we predict that AgAlP2Se6 monolayers are a promising photocatalytic material capable of playing a significant role in photocatalytic water decomposition and other fields.
{"title":"Potential of two-dimensional AgAlP2Se6 monolayer for high-efficiency photocatalytic hydrogen production","authors":"","doi":"10.1016/j.mssp.2024.109040","DOIUrl":"10.1016/j.mssp.2024.109040","url":null,"abstract":"<div><div>In recent years, two-dimensional (2D) photocatalytic materials have garnered significant attention from researchers because of their high specific surface area and numerous active sites for photocatalytic reactions. However, many 2D photocatalytic materials exhibit low photogenerated carrier mobility and easy recombination of photogenerated electron-hole pairs, leading to poor photocatalytic performance. In this study, we propose and investigate AgAlP<sub>2</sub>Se<sub>6</sub> monolayers theoretically for the first time. Through first-principle calculations, we find that AgAlP<sub>2</sub>Se<sub>6</sub> monolayers possess good mechanical, thermal, and kinetic stabilities and exhibit a high carrier utilization rate. The electron mobility of the AgAlP<sub>2</sub>Se<sub>6</sub> monolayer is 14.77 times higher than the hole mobility. This significant mobility difference helps to inhibit the recombination of electron-hole pairs, thereby improving photocatalytic efficiency. The solar-to-hydrogen conversion efficiency (STH) reaches 18.10 %, significantly exceeding the critical value (10 %) for the commercial application of photocatalytic water decomposition. Therefore, we predict that AgAlP<sub>2</sub>Se<sub>6</sub> monolayers are a promising photocatalytic material capable of playing a significant role in photocatalytic water decomposition and other fields.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":null,"pages":null},"PeriodicalIF":4.2,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142537186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-29DOI: 10.1016/j.mssp.2024.109052
The fabrication of an N-doped ZnO nanocomposite was described in this study using hydrothermal methods at various temperatures (200–600 °C). The developed N-doped ZnO nanocomposite was also utilized to investigate supercapacitors and photocatalytic degradation of pigments. Improving ZnO supercapacitor and photocatalytic dye decomposition capabilities proved quite difficult. Consequently, it was essential to create an N-doped ZnO at various temperatures. This approach aims to improve photocatalytic dye degradation and energy storage in N-doped ZnO nanocomposites in a synergistic manner. As we evaluated the photocatalytic activity, the N-doped ZnO-600 °C nanocomposite showed better methylene blue (MB) and methyl orange (MO) degradation efficiency. In just 120 min of exposure to visible light, about 99 % and 99.1 % of the MB and MO deterioration was seen; in contrast, only 60.5 %, 70.2 %, 79.6 %, 84 %, and 99 % of the MB degradation and 57.7, 62, 61.6, 70.1, 76.9, 84.2, and 99.1 % was shown on the pure ZnO, TiO2 (P25), ZnO-200 °C, ZnO-400 °C, ZnO-600 °C, and N-ZnO 600 °C materials, respectively. The increased photocatalytic efficiency was ascribed to the synergistic effect, improved charge separation, and increased visible light absorption by the N-ZnO 600 °C nanocomposite. Using XRD, UV–vis DRS, PL, FE-SEM, and HR-TEM investigations, the structural, optical, and surface morphology of the produced catalyst were examined. Additionally, the produced material was used in potassium hydroxide (KOH) and redox additive electrolytes (RE) electrochemical supercapacitor performance. Comprehensive studies revealed that the N-ZnO electrode enhanced cycle voltammetry (CV), galvanostatic charge-discharge (GCD), rate ability, and reliability under redox additive electrolytes (RE) and potassium hydroxide (KOH). The inclusion of RE increased the efficiency even more, indicating the potential for advanced applications of energy storage. The highest specific capacitance of the ZnO electrode increased significantly from 159 Fg-1 in KOH to 498 Fg-1 at 1 Ag-1. The N-ZnO-600 °C electrode, on the other hand, demonstrated a maximum specific capacitance of 288 Fg-1 at 1 Ag-1 in KOH and a significantly higher specific capacitance of 762 Fg-1 at 1 Ag-1 in KOH + RE.
本研究采用水热法在不同温度（200-600 °C）下制备了掺杂 N 的氧化锌纳米复合材料。所开发的掺杂 N 的氧化锌纳米复合材料还被用于研究超级电容器和颜料的光催化降解。事实证明，提高氧化锌超级电容器和光催化染料分解能力相当困难。因此，必须在不同温度下制造出掺杂 N 的氧化锌。这种方法旨在以协同增效的方式提高掺杂 N 的氧化锌纳米复合材料的光催化染料降解和能量存储能力。在光催化活性评估中，掺杂 N 的 ZnO-600 ℃ 纳米复合材料显示出更好的亚甲基蓝（MB）和甲基橙（MO）降解效率。在短短 120 分钟的可见光照射下，亚甲基蓝和甲基橙的降解率分别为 99% 和 99.1%；相比之下，亚甲基蓝的降解率分别为 60.5%、70.2%、79.6%、84% 和 99%，甲基橙的降解率分别为 57.7%、62.6%、61.6% 和 99%。纯 ZnO、TiO2 (P25)、ZnO-200 ℃、ZnO-400 ℃、ZnO-600 ℃ 和 N-ZnO 600 ℃ 材料的降解率分别为 57%、62%、61.6%、70.1%、76.9%、84.2% 和 99.1%。光催化效率的提高归因于 N-ZnO 600 °C 纳米复合材料的协同效应、电荷分离的改善以及可见光吸收的增加。利用 XRD、UV-vis DRS、PL、FE-SEM 和 HR-TEM 研究了所制备催化剂的结构、光学和表面形态。此外，还将制得的材料用于氢氧化钾（KOH）和氧化还原添加剂电解质（RE）的电化学超级电容器性能。综合研究表明，在氧化还原添加剂电解质（RE）和氢氧化钾（KOH）中，N-氧化锌电极增强了循环伏安法（CV）、电静态充放电法（GCD）、速率能力和可靠性。加入 RE 后，效率进一步提高，这表明了先进储能应用的潜力。氧化锌电极的最高比电容从 KOH 中的 159 Fg-1 显著增加到 1 Ag-1 时的 498 Fg-1。另一方面，N-ZnO-600 °C 电极在 KOH 溶液中 1 Ag-1 时的最大比电容为 288 Fg-1，在 KOH + RE 溶液中 1 Ag-1 时的比电容为 762 Fg-1。
{"title":"Fabrication of N-doped ZnO for evaluation of photocatalytic degradation of methylene blue, methyl orange and improved supercapacitor efficiency under redox-active electrolyte","authors":"","doi":"10.1016/j.mssp.2024.109052","DOIUrl":"10.1016/j.mssp.2024.109052","url":null,"abstract":"<div><div>The fabrication of an N-doped ZnO nanocomposite was described in this study using hydrothermal methods at various temperatures (200–600 °C). The developed N-doped ZnO nanocomposite was also utilized to investigate supercapacitors and photocatalytic degradation of pigments. Improving ZnO supercapacitor and photocatalytic dye decomposition capabilities proved quite difficult. Consequently, it was essential to create an N-doped ZnO at various temperatures. This approach aims to improve photocatalytic dye degradation and energy storage in N-doped ZnO nanocomposites in a synergistic manner. As we evaluated the photocatalytic activity, the N-doped ZnO-600 °C nanocomposite showed better methylene blue (MB) and methyl orange (MO) degradation efficiency. In just 120 min of exposure to visible light, about 99 % and 99.1 % of the MB and MO deterioration was seen; in contrast, only 60.5 %, 70.2 %, 79.6 %, 84 %, and 99 % of the MB degradation and 57.7, 62, 61.6, 70.1, 76.9, 84.2, and 99.1 % was shown on the pure ZnO, TiO<sub>2</sub> (P25), ZnO-200 °C, ZnO-400 °C, ZnO-600 °C, and N-ZnO 600 °C materials, respectively. The increased photocatalytic efficiency was ascribed to the synergistic effect, improved charge separation, and increased visible light absorption by the N-ZnO 600 °C nanocomposite. Using XRD, UV–vis DRS, PL, FE-SEM, and HR-TEM investigations, the structural, optical, and surface morphology of the produced catalyst were examined. Additionally, the produced material was used in potassium hydroxide (KOH) and redox additive electrolytes (RE) electrochemical supercapacitor performance. Comprehensive studies revealed that the N-ZnO electrode enhanced cycle voltammetry (CV), galvanostatic charge-discharge (GCD), rate ability, and reliability under redox additive electrolytes (RE) and potassium hydroxide (KOH). The inclusion of RE increased the efficiency even more, indicating the potential for advanced applications of energy storage. The highest specific capacitance of the ZnO electrode increased significantly from 159 Fg<sup>-1</sup> in KOH to 498 Fg<sup>-1</sup> at 1 Ag<sup>-1</sup>. The N-ZnO-600 °C electrode, on the other hand, demonstrated a maximum specific capacitance of 288 Fg<sup>-1</sup> at 1 Ag<sup>-1</sup> in KOH and a significantly higher specific capacitance of 762 Fg<sup>-1</sup> at 1 Ag<sup>-1</sup> in KOH + RE.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":null,"pages":null},"PeriodicalIF":4.2,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142537238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-29DOI: 10.1016/j.mssp.2024.109054
In recent years, CdZnTe has attracted extensive attention due to its excellent properties. In this paper, CdZnTe thick films were prepared by close-spaced sublimation (CSS) method. An innovative method of introducing a seed layer is employed to enhance the performance of CdZnTe thick films and their devices. The effect of the seed layer on the properties of CdZnTe thick films was systematically analyzed. The results indicate that the seed layer significantly promotes the uniform distribution and preferred orientation of grains, thereby improving the crystalline quality of CdZnTe thick films. Additionally, the seed layer also enhances the performance of CdZnTe thick film ultraviolet photodetectors. The seed layer is thus a key factor in optimizing the performance of CdZnTe thick films, which is beneficial for promoting its applications in fields such as optoelectronic detection.
{"title":"Effect of a seed layer on the properties of CdZnTe thick films prepared by close-spaced sublimation method","authors":"","doi":"10.1016/j.mssp.2024.109054","DOIUrl":"10.1016/j.mssp.2024.109054","url":null,"abstract":"<div><div>In recent years, CdZnTe has attracted extensive attention due to its excellent properties. In this paper, CdZnTe thick films were prepared by close-spaced sublimation (CSS) method. An innovative method of introducing a seed layer is employed to enhance the performance of CdZnTe thick films and their devices. The effect of the seed layer on the properties of CdZnTe thick films was systematically analyzed. The results indicate that the seed layer significantly promotes the uniform distribution and preferred orientation of grains, thereby improving the crystalline quality of CdZnTe thick films. Additionally, the seed layer also enhances the performance of CdZnTe thick film ultraviolet photodetectors. The seed layer is thus a key factor in optimizing the performance of CdZnTe thick films, which is beneficial for promoting its applications in fields such as optoelectronic detection.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":null,"pages":null},"PeriodicalIF":4.2,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142537167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-29DOI: 10.1016/j.mssp.2024.109023
Herein, we undertake a detailed exploration of the structural stability, magneto-electronic behavior, and thermoelectric properties of Cs₂AgMBr₆ (M = V, Mn, Ni) halide double perovskites using first-principles approach. The study commences with a meticulous assessment of both structural stability and thermodynamic properties employing various metrics. Energy minimization across different phases, utilizing the Birch-Murnaghan equation of state, confirms the ferromagnetic phase as energetically favoured, supported by Curie-Weiss constants of 98 K, 100 K, and 150 K for V, Mn, and Ni-based perovskites, respectively. Mechanical properties, including hardness, stiffness, ductility, and fracture strength, are derived from the simulated elastic constants, ensuring the mechanical stability of the materials. Electronic structure analysis, performed using the PBE-GGA and GGA + mBJ functionals, reveals that Cs₂AgMBr₆ compounds exhibit half-metallic ferromagnetism, with 100 % spin polarization at the Fermi level. Analysis of the partial density of states highlights the half-metallic ferromagnetic mechanism, confirming predominant ferromagnetic order through parameters such as the exchange splitting energy (Δx), p-d exchange interaction energy (Δx(p-d)), crystal-field energy (Ecrys), and exchange constants (N₀α and N₀β). The negative values of the exchange constants further validated the dominant ferromagnetic order in both s-d and p-d interactions, with unpaired electrons contributing magnetic moments of 2 μB for V, 4 μB for Mn, and 1 μB for Ni-based perovskites. Also, the Curie temperatures are calculated as 385 K, 747 K, and 204 K for V, Mn, and Ni-based perovskites. The overall findings, which reveal 100 % spin polarization and high zT values, underscore the significant potential of Cs₂AgMBr₆ halide perovskites for advancing spintronics and thermoelectric applications.
{"title":"Harnessing the half-metallicity and thermoelectric insights in Cs2AgMBr6 (M = V, Mn, Ni) double halide perovskites: A DFT study","authors":"","doi":"10.1016/j.mssp.2024.109023","DOIUrl":"10.1016/j.mssp.2024.109023","url":null,"abstract":"<div><div>Herein, we undertake a detailed exploration of the structural stability, magneto-electronic behavior, and thermoelectric properties of Cs₂AgMBr₆ (M = V, Mn, Ni) halide double perovskites using first-principles approach. The study commences with a meticulous assessment of both structural stability and thermodynamic properties employing various metrics. Energy minimization across different phases, utilizing the Birch-Murnaghan equation of state, confirms the ferromagnetic phase as energetically favoured, supported by Curie-Weiss constants of 98 K, 100 K, and 150 K for V, Mn, and Ni-based perovskites, respectively. Mechanical properties, including hardness, stiffness, ductility, and fracture strength, are derived from the simulated elastic constants, ensuring the mechanical stability of the materials. Electronic structure analysis, performed using the PBE-GGA and GGA + mBJ functionals, reveals that Cs₂AgMBr₆ compounds exhibit half-metallic ferromagnetism, with 100 % spin polarization at the Fermi level. Analysis of the partial density of states highlights the half-metallic ferromagnetic mechanism, confirming predominant ferromagnetic order through parameters such as the exchange splitting energy (Δ<sub>x</sub>), <em>p-d</em> exchange interaction energy (Δ<sub>x</sub>(<em>p-d</em>)), crystal-field energy (<em>E</em><sub>crys</sub>), and exchange constants (N₀α and N₀β). The negative values of the exchange constants further validated the dominant ferromagnetic order in both <em>s-d</em> and <em>p-d</em> interactions, with unpaired electrons contributing magnetic moments of 2 μ<sub>B</sub> for V, 4 μ<sub>B</sub> for Mn, and 1 μ<sub>B</sub> for Ni-based perovskites. Also, the Curie temperatures are calculated as 385 K, 747 K, and 204 K for V, Mn, and Ni-based perovskites. The overall findings, which reveal 100 % spin polarization and high zT values, underscore the significant potential of Cs₂AgMBr₆ halide perovskites for advancing spintronics and thermoelectric applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":null,"pages":null},"PeriodicalIF":4.2,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142537063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-29DOI: 10.1016/j.mssp.2024.109056
Low-temperature soldering is a joining technology that attracts considerable attention in recent years due to its potential in energy saving and carbon reduction. Eutectic SnBi alloy is a common low-temperature solder. The material manufacturing using cost-effective electrodeposition suffers from composition control problem caused by very different reduction potentials between Sn and Bi. In this study, a Sn/Bi bilayer structure is constructed using electrodeposition and the microstructural evolution under thermal annealing is investigated in detail to evaluate its potential in replacement of eutectic SnBi alloy. Results show that interfacial liquation occurs rapidly in the Sn/Bi bilayer structure heated at 180 °C for only 5 s, and the bilayer structure completely transforms into a eutectic-like structure after 30 s. The microstructural evolution history is established with the help of phase diagram and electron microscopy examination. Shear test results indicate that the eutectic-like structure exhibits good mechanical property comparable to commercial eutectic SnBi solder paste. The rapid phase transformation feature and high shear strength make the Sn/Bi bilayer structure a promising candidate for low-temperature joining applications.
低温焊接是近年来备受关注的一种连接技术，因为它具有节能减碳的潜力。共晶锡铋合金是一种常见的低温焊料。由于锡和铋的还原电位存在很大差异，因此使用经济高效的电沉积方法制造材料存在成分控制问题。本研究利用电沉积技术构建了锡/铋双层结构，并详细研究了其在热退火条件下的微观结构演变，以评估其替代共晶锡铋合金的潜力。结果表明，锡/铋双层结构在 180 °C 下加热仅 5 秒钟就迅速发生界面液化，30 秒钟后双层结构完全转变为类共晶结构。剪切测试结果表明，类共晶结构具有良好的机械性能，可与商用共晶锡铋焊膏媲美。快速相变特征和高剪切强度使锡/铋双层结构成为低温连接应用的理想候选材料。
{"title":"Low-temperature soldering using Sn/Bi electrodeposited bilayer","authors":"","doi":"10.1016/j.mssp.2024.109056","DOIUrl":"10.1016/j.mssp.2024.109056","url":null,"abstract":"<div><div>Low-temperature soldering is a joining technology that attracts considerable attention in recent years due to its potential in energy saving and carbon reduction. Eutectic SnBi alloy is a common low-temperature solder. The material manufacturing using cost-effective electrodeposition suffers from composition control problem caused by very different reduction potentials between Sn and Bi. In this study, a Sn/Bi bilayer structure is constructed using electrodeposition and the microstructural evolution under thermal annealing is investigated in detail to evaluate its potential in replacement of eutectic SnBi alloy. Results show that interfacial liquation occurs rapidly in the Sn/Bi bilayer structure heated at 180 °C for only 5 s, and the bilayer structure completely transforms into a eutectic-like structure after 30 s. The microstructural evolution history is established with the help of phase diagram and electron microscopy examination. Shear test results indicate that the eutectic-like structure exhibits good mechanical property comparable to commercial eutectic SnBi solder paste. The rapid phase transformation feature and high shear strength make the Sn/Bi bilayer structure a promising candidate for low-temperature joining applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":null,"pages":null},"PeriodicalIF":4.2,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142537066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-29DOI: 10.1016/j.mssp.2024.109051
Although the formation of type-II heterojunctions increases the separation of photoinduced electron-hole pairs, their reduced redox potentials adversely affect photocatalytic performance. However, by adjusting the band positions and Fermi levels of the semiconductors, it is viable to switch the type of heterojunction from type-II to S-scheme, which not only improves the charge separation but also enhances the redox potential, resulting in excellent photocatalytic performance. While various excellent design strategies for switching the heterojunction from type-II to S-scheme have been established, there is a lack of related review papers to date. The current review highlights the distinction between type-II and S-scheme heterojunctions, focusing on the band positions and Fermi level conditions needed for photoinduced electron-hole pairs to adhere to either charge transfer mechanism. In addition, it particularly explains the recent excellent design strategies used to facilitate the switching of the heterojunctions from type-II to S-scheme. Finally, a brief outline of the challenges and novel research interests in the selected direction is provided, which can be of high relevance to the domain of heterojunction-type switching.
虽然 II 型异质结的形成增加了光诱导电子-空穴对的分离，但其降低的氧化还原电位会对光催化性能产生不利影响。然而，通过调整半导体的带位和费米级，可以将异质结的类型从 II 型转换为 S 型，这不仅能改善电荷分离，还能提高氧化还原电位，从而获得优异的光催化性能。虽然将异质结从 II 型转换为 S 型的各种优秀设计策略已经确立，但迄今为止还缺乏相关的综述论文。本综述强调了 II 型和 S 型异质结之间的区别，重点介绍了光诱导电子-空穴对坚持任一电荷转移机制所需的带位和费米级条件。此外，报告还特别解释了近期用于促进异质结从 II 型向 S 型转换的出色设计策略。最后，简要概述了所选方向的挑战和新的研究兴趣，这些挑战和兴趣可能与异质结类型转换领域高度相关。
{"title":"A review of strategies to switch heterojunction system from type-II to S-scheme for photocatalytic applications","authors":"","doi":"10.1016/j.mssp.2024.109051","DOIUrl":"10.1016/j.mssp.2024.109051","url":null,"abstract":"<div><div>Although the formation of type-II heterojunctions increases the separation of photoinduced electron-hole pairs, their reduced redox potentials adversely affect photocatalytic performance. However, by adjusting the band positions and Fermi levels of the semiconductors, it is viable to switch the type of heterojunction from type-II to S-scheme, which not only improves the charge separation but also enhances the redox potential, resulting in excellent photocatalytic performance. While various excellent design strategies for switching the heterojunction from type-II to S-scheme have been established, there is a lack of related review papers to date. The current review highlights the distinction between type-II and S-scheme heterojunctions, focusing on the band positions and Fermi level conditions needed for photoinduced electron-hole pairs to adhere to either charge transfer mechanism. In addition, it particularly explains the recent excellent design strategies used to facilitate the switching of the heterojunctions from type-II to S-scheme. Finally, a brief outline of the challenges and novel research interests in the selected direction is provided, which can be of high relevance to the domain of heterojunction-type switching.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":null,"pages":null},"PeriodicalIF":4.2,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142537281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-29DOI: 10.1016/j.mssp.2024.109062
The formation of dotted and lined 2D nano- and microstructures on the surface of GaAs is demonstrated. These surface structures were devised using the vector 1030 nm, 250 fs laser beams of variable polarization (lineal, radial, and orthogonal) polarization. The annular and radial ripples were produced using radial and azimuthal polarizations of the laser pulses. Additionally, the formation of the grooves orthogonally placed with regard to the curved and radial ripples appeared with the increase of the number of laser shots on the same spot. This pattern was also observed when the laser beam was moved across the GaAs surface at a 50 kHz pulse repetition rate. This method of printing the unconventional 2D patterns allow for the formation of the complex surface structures.
{"title":"2D ripples and grooves formation on GaAs using different states of polarization of femtosecond pulses","authors":"","doi":"10.1016/j.mssp.2024.109062","DOIUrl":"10.1016/j.mssp.2024.109062","url":null,"abstract":"<div><div>The formation of dotted and lined 2D nano- and microstructures on the surface of GaAs is demonstrated. These surface structures were devised using the vector 1030 nm, 250 fs laser beams of variable polarization (lineal, radial, and orthogonal) polarization. The annular and radial ripples were produced using radial and azimuthal polarizations of the laser pulses. Additionally, the formation of the grooves orthogonally placed with regard to the curved and radial ripples appeared with the increase of the number of laser shots on the same spot. This pattern was also observed when the laser beam was moved across the GaAs surface at a 50 kHz pulse repetition rate. This method of printing the unconventional 2D patterns allow for the formation of the complex surface structures.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":null,"pages":null},"PeriodicalIF":4.2,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142537061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-29DOI: 10.1016/j.mssp.2024.109042
In this work, for the first time, a density functional theory (DFT) based comprehensive theoretical study is performed on the surface electronic properties of Bi2Se3 nanosheet in the presence of a surface capping layer as well as mechanical strain. The study systematically introduces a biaxial compressive and tensile strain up to 5 % in natural, Sb2Se3 surface capped, and SbBiSe3 surface capped Bi2Se3, and the subsequent effects on the electronic properties are assessed from the surface energy band (E-k) structure, the density of states (DOS), band edge energy and bandgap variations, surface conducting state localization, and Fermi surface spin-textures. The result demonstrates that the Sb2Se3 and SbBiSe3 surface capping layer delocalizes the surface Bloch states leading to inter-surface surface state hybridization through bulk and subsequent Dirac point annihilation with surface bandgap opening, and these effects is more prominent for Sb2Se3 surface capping with a bandgap opening of ∼9 meV. The application of biaxial compressive strain (tensile stress) can further localizes the surface Bloch states and thereby mitigate the surface bandgap opening in surface capped Bi2Se3. In contrast, the application of biaxial tensile strain (compressive stress) enhances the surface Bloch state delocalization leading to larger surface bandgap opening in surface capped Bi2Se3 and even introduces surface bandgap in natural Bi2Se3. The interplay of surface capping and strain also exhibits distinct influence on the spin-momentum locking, where the spin-chirality of the Fermi surface can be destroyed, restored, and even reversed through application of suitable biaxial strain in surface capped Bi2Se3. In essence, this work presents an extensive theoretical and design-level insight into the surface capping and biaxial strain co-engineering in Bi2Se3, which can potentially facilitate different topological transport for modern optoelectronics, spintronics, valleytronics, bulk photovoltaics applications of engineered nanostructured topological materials in the future.
{"title":"Sb2Se3 and SbBiSe3 surface capping and biaxial strain Co-engineering for tuning the surface electronic properties of Bi2Se3 nanosheet- A density functional theory based investigation","authors":"","doi":"10.1016/j.mssp.2024.109042","DOIUrl":"10.1016/j.mssp.2024.109042","url":null,"abstract":"<div><div>In this work, for the first time, a density functional theory (DFT) based comprehensive theoretical study is performed on the surface electronic properties of Bi<sub>2</sub>Se<sub>3</sub> nanosheet in the presence of a surface capping layer as well as mechanical strain. The study systematically introduces a biaxial compressive and tensile strain up to 5 % in natural, Sb<sub>2</sub>Se<sub>3</sub> surface capped, and SbBiSe<sub>3</sub> surface capped Bi<sub>2</sub>Se<sub>3</sub>, and the subsequent effects on the electronic properties are assessed from the surface energy band (E-k) structure, the density of states (DOS), band edge energy and bandgap variations, surface conducting state localization, and Fermi surface spin-textures. The result demonstrates that the Sb<sub>2</sub>Se<sub>3</sub> and SbBiSe<sub>3</sub> surface capping layer delocalizes the surface Bloch states leading to inter-surface surface state hybridization through bulk and subsequent Dirac point annihilation with surface bandgap opening, and these effects is more prominent for Sb<sub>2</sub>Se<sub>3</sub> surface capping with a bandgap opening of ∼9 meV. The application of biaxial compressive strain (tensile stress) can further localizes the surface Bloch states and thereby mitigate the surface bandgap opening in surface capped Bi<sub>2</sub>Se<sub>3</sub>. In contrast, the application of biaxial tensile strain (compressive stress) enhances the surface Bloch state delocalization leading to larger surface bandgap opening in surface capped Bi<sub>2</sub>Se<sub>3</sub> and even introduces surface bandgap in natural Bi<sub>2</sub>Se<sub>3</sub>. The interplay of surface capping and strain also exhibits distinct influence on the spin-momentum locking, where the spin-chirality of the Fermi surface can be destroyed, restored, and even reversed through application of suitable biaxial strain in surface capped Bi<sub>2</sub>Se<sub>3</sub>. In essence, this work presents an extensive theoretical and design-level insight into the surface capping and biaxial strain co-engineering in Bi<sub>2</sub>Se<sub>3</sub>, which can potentially facilitate different topological transport for modern optoelectronics, spintronics, valleytronics, bulk photovoltaics applications of engineered nanostructured topological materials in the future.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":null,"pages":null},"PeriodicalIF":4.2,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142537083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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