Pub Date : 2026-02-02DOI: 10.1016/j.mssp.2026.110473
Ming Wu , Jin Yang , Tao Zhang , Yixuan Zhao , Xiang Zhang , Qing Jiang , Jianian Tian , Meng Yang , Tao Zhang , Peng Li
Ultrafast laser micro-welding was used for the high-efficient and high-quality joining of aluminosilicate glass (AS) and SiC, whose reliable packaging was of importance in Micro-Electro-Mechanical Systems (MEMS). By using the orthogonal test method, the process parameters were optimized, which were single pulse energy of 30 μJ, scanning speed of 10 mm/s, and the scanning pattern of filling grid inside circle. Under these conditions, the joint achieved a maximum shear strength of 33.1 MPa. Microstructural analysis revealed an evident elemental mixture layer with a thickness of 1.4 μm at the interface, indicating strong material intermixing and elemental diffusion under ultrafast laser irradiation. In addition, the joint permeability was assessed by waterproofing evaluations, revealing that the joints exhibit outstanding impermeable properties, which met the IPX7 waterproof standard (immersion in 1 m of water for 30 min) for enclosure packaging in practical applications. Furthermore, the temperature field simulation results showed that the temperature generated by the laser irradiation during the welding process exceeded the softening temperature and melting point of the base material. The joint formation mechanism was also discussed. This work provides theoretical guidance for the ultrafast laser impermeability of transparent materials with SiC, holding significant potential in applications like semiconductor packaging and MEMS fabrication.
{"title":"Ultrafast laser micro-welding of glass to SiC: Microstructure, mechanical and impermeable properties","authors":"Ming Wu , Jin Yang , Tao Zhang , Yixuan Zhao , Xiang Zhang , Qing Jiang , Jianian Tian , Meng Yang , Tao Zhang , Peng Li","doi":"10.1016/j.mssp.2026.110473","DOIUrl":"10.1016/j.mssp.2026.110473","url":null,"abstract":"<div><div>Ultrafast laser micro-welding was used for the high-efficient and high-quality joining of aluminosilicate glass (AS) and SiC, whose reliable packaging was of importance in Micro-Electro-Mechanical Systems (MEMS). By using the orthogonal test method, the process parameters were optimized, which were single pulse energy of 30 μJ, scanning speed of 10 mm/s, and the scanning pattern of filling grid inside circle. Under these conditions, the joint achieved a maximum shear strength of 33.1 MPa. Microstructural analysis revealed an evident elemental mixture layer with a thickness of 1.4 μm at the interface, indicating strong material intermixing and elemental diffusion under ultrafast laser irradiation. In addition, the joint permeability was assessed by waterproofing evaluations, revealing that the joints exhibit outstanding impermeable properties, which met the IPX7 waterproof standard (immersion in 1 m of water for 30 min) for enclosure packaging in practical applications. Furthermore, the temperature field simulation results showed that the temperature generated by the laser irradiation during the welding process exceeded the softening temperature and melting point of the base material. The joint formation mechanism was also discussed. This work provides theoretical guidance for the ultrafast laser impermeability of transparent materials with SiC, holding significant potential in applications like semiconductor packaging and MEMS fabrication.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110473"},"PeriodicalIF":4.6,"publicationDate":"2026-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-01DOI: 10.1016/j.mssp.2026.110478
Hamza Ighnih , Hassan Ouachtak , Amane Jada , Abdelaziz Ait Addi
The main challenge for sustainability and green environmental is developing efficient advanced materials for photocatalytic applications. In this study, we designed a new ternary hybrid photocatalyst based on BiOBr, g-C3N4, and kaolinite. This nanocomposite was employed for degrading toxic RhB dye through photocatalysis under sunlight exposure. This materials were thoroughly characterized using advanced techniques including XRD, FTIR, SEM, TEM, EDS, DRS, and XPS to investigate their structural, microstructural, optical, and spectroscopic properties. Photocatalytic performance studies revealed that RhB dye was completely removed within 20 min of irradiation. The degradation efficiency was 8.44 and 5.60 times higher than that of g-C3N4 and BiOBr, respectively. A direct Z-Scheme charge transfer pathway is proposed, supported by DRS, and further confirmed by radical scavenging experiments. Furthermore, the composite exhibited excellent stability, maintaining its performance over five reuse cycles. This work highlights a promising strategy for practical large-scale wastewater treatment using sunlight-driven photocatalysis.
{"title":"Construction of BiOBr/g-C3N4/Kaolinite Z-scheme heterojunction photocatalysts for highly efficient photocatalytic degradation of organic pollutants","authors":"Hamza Ighnih , Hassan Ouachtak , Amane Jada , Abdelaziz Ait Addi","doi":"10.1016/j.mssp.2026.110478","DOIUrl":"10.1016/j.mssp.2026.110478","url":null,"abstract":"<div><div>The main challenge for sustainability and green environmental is developing efficient advanced materials for photocatalytic applications. In this study, we designed a new ternary hybrid photocatalyst based on BiOBr, g-C<sub>3</sub>N<sub>4</sub>, and kaolinite. This nanocomposite was employed for degrading toxic RhB dye through photocatalysis under sunlight exposure. This materials were thoroughly characterized using advanced techniques including XRD, FTIR, SEM, TEM, EDS, DRS, and XPS to investigate their structural, microstructural, optical, and spectroscopic properties. Photocatalytic performance studies revealed that RhB dye was completely removed within 20 min of irradiation. The degradation efficiency was 8.44 and 5.60 times higher than that of g-C<sub>3</sub>N<sub>4</sub> and BiOBr, respectively. A direct Z-Scheme charge transfer pathway is proposed, supported by DRS, and further confirmed by radical scavenging experiments. Furthermore, the composite exhibited excellent stability, maintaining its performance over five reuse cycles. This work highlights a promising strategy for practical large-scale wastewater treatment using sunlight-driven photocatalysis.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110478"},"PeriodicalIF":4.6,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-01DOI: 10.1016/j.mssp.2026.110479
Peipei Xue , Chong Wu , Yong Zhang , Xueping Zhao , Hai Zhang , Pucun Bai
Amorphous Ga2O3 (a-Ga2O3) films have a wide bandgap and can be fabricated at room temperature, making them ideal for constructing heterojunctions with p-type conductive films to achieve broadband ultraviolet (UV) photodetection. However, the performance of single-component a-Ga2O3 devices is often constrained by high dark current and slow response. In this work, a high-performance self-powered UV γ-CuI/a-Ga2O3 heterojunction photodetector was fabricated using physical vapor transport and magnetron sputtering techniques. The obtained epitaxial γ-CuI (111) film exhibits a step-like surface morphology and a bandgap of 3.01 eV. Additionally, the a-Ga2O3 layer forms uniform nanoclusters with a bandgap of 4.93 eV. The combination of epitaxial γ-CuI (111) film and a-Ga2O3 layer enables broadband UV absorption. More importantly, under self-powered operation (0 V), the device achieves an ultralow dark current of 1.18 × 10−12 A. Under 254-nm illumination, it exhibits a high photocurrent-to-dark current ratio of 2.19 × 103, a responsivity of 9.63 × 10−2 mA/W, a specific detectivity of 2.35 × 1010 Jones, and rapid response times, with rise and decay times of 2.20 and 0.21 s, respectively. This work not only verifies the feasibility of integrating epitaxial γ-CuI with a-Ga2O3 for high-performance photodetectors but also provides an effective strategy for developing a-Ga2O3-based self-powered UV photodetectors with ultralow dark current.
{"title":"Fabrication of amorphous Ga2O3 and epitaxial γ-CuI heterojunctions for broadband self-powered ultraviolet photodetectors","authors":"Peipei Xue , Chong Wu , Yong Zhang , Xueping Zhao , Hai Zhang , Pucun Bai","doi":"10.1016/j.mssp.2026.110479","DOIUrl":"10.1016/j.mssp.2026.110479","url":null,"abstract":"<div><div>Amorphous Ga<sub>2</sub>O<sub>3</sub> (a-Ga<sub>2</sub>O<sub>3</sub>) films have a wide bandgap and can be fabricated at room temperature, making them ideal for constructing heterojunctions with p-type conductive films to achieve broadband ultraviolet (UV) photodetection. However, the performance of single-component a-Ga<sub>2</sub>O<sub>3</sub> devices is often constrained by high dark current and slow response. In this work, a high-performance self-powered UV γ-CuI/a-Ga<sub>2</sub>O<sub>3</sub> heterojunction photodetector was fabricated using physical vapor transport and magnetron sputtering techniques. The obtained epitaxial γ-CuI (111) film exhibits a step-like surface morphology and a bandgap of 3.01 eV. Additionally, the a-Ga<sub>2</sub>O<sub>3</sub> layer forms uniform nanoclusters with a bandgap of 4.93 eV. The combination of epitaxial γ-CuI (111) film and a-Ga<sub>2</sub>O<sub>3</sub> layer enables broadband UV absorption. More importantly, under self-powered operation (0 V), the device achieves an ultralow dark current of 1.18 × 10<sup>−12</sup> A. Under 254-nm illumination, it exhibits a high photocurrent-to-dark current ratio of 2.19 × 10<sup>3</sup>, a responsivity of 9.63 × 10<sup>−2</sup> mA/W, a specific detectivity of 2.35 × 10<sup>10</sup> Jones, and rapid response times, with rise and decay times of 2.20 and 0.21 s, respectively. This work not only verifies the feasibility of integrating epitaxial γ-CuI with a-Ga<sub>2</sub>O<sub>3</sub> for high-performance photodetectors but also provides an effective strategy for developing a-Ga<sub>2</sub>O<sub>3</sub>-based self-powered UV photodetectors with ultralow dark current.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110479"},"PeriodicalIF":4.6,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-01DOI: 10.1016/j.mssp.2026.110477
Rajib Chowdhury, Thomas Poche, Seonhee Jang
This study investigated the impact of metal diffusion on the electrical performance and reliability of low dielectric constant (low-k) SiCOH thin films fabricated by plasma-enhanced chemical vapor deposition. The deposition plasma power substantially influenced the k value, with higher plasma power leading to an increased k value due to film densification and reduction in methyl groups. To evaluate the electrical performance and reliability of SiCOH films, metal-insulator-semiconductor (MIS) capacitors were fabricated using different metals of Al, Cu, Co, Mo, and W as metal gates. The SiCOH films were subjected to a thermal annealing process to apply thermal stress to the films. After annealing, the k value decreased due to structural changes in the films. Electrical characterization suggested that the annealing process elevated the leakage current in MIS capacitors, particularly for Cu-gate MIS capacitors, where a significant Cu diffusion into the SiCOH film degraded the film's dielectric properties. In contrast, the Co-gate MIS capacitors demonstrated better electrical stability in terms of leakage current and breakdown field. Understanding the role of metal diffusion using different metal gates is critical for optimizing the performance of the SiCOH thin films as an interlayer dielectric in advanced microelectronics.
{"title":"Effects of metal diffusion on electrical performance and reliability of low dielectric constant materials under thermal stress","authors":"Rajib Chowdhury, Thomas Poche, Seonhee Jang","doi":"10.1016/j.mssp.2026.110477","DOIUrl":"10.1016/j.mssp.2026.110477","url":null,"abstract":"<div><div>This study investigated the impact of metal diffusion on the electrical performance and reliability of low dielectric constant (low-<em>k</em>) SiCOH thin films fabricated by plasma-enhanced chemical vapor deposition. The deposition plasma power substantially influenced the <em>k</em> value, with higher plasma power leading to an increased <em>k</em> value due to film densification and reduction in methyl groups. To evaluate the electrical performance and reliability of SiCOH films, metal-insulator-semiconductor (MIS) capacitors were fabricated using different metals of Al, Cu, Co, Mo, and W as metal gates. The SiCOH films were subjected to a thermal annealing process to apply thermal stress to the films. After annealing, the <em>k</em> value decreased due to structural changes in the films. Electrical characterization suggested that the annealing process elevated the leakage current in MIS capacitors, particularly for Cu-gate MIS capacitors, where a significant Cu diffusion into the SiCOH film degraded the film's dielectric properties. In contrast, the Co-gate MIS capacitors demonstrated better electrical stability in terms of leakage current and breakdown field. Understanding the role of metal diffusion using different metal gates is critical for optimizing the performance of the SiCOH thin films as an interlayer dielectric in advanced microelectronics.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110477"},"PeriodicalIF":4.6,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-31DOI: 10.1016/j.mssp.2025.110367
Mingyu Jia , Yuanyuan Liu , Shuting Li , Xiaoxia Chen , Changkun Cai , Shengli An
Gd2O3-doped CeO2 (GDC) is regarded as a promising electrolyte material for Intermediate-Temperature Solid Oxide Fuel Cells (IT-SOFCs) due to its excellent ionic conductivity. However, under SOFC operating conditions, the reduction of Ce4+ leads to electron leakage and decreased stability, which limit its application. This study investigates the effects of different Gd3+ doping concentrations on the total conductivity and electronic conductivity of the GDC electrolyte under a hydrogen atmosphere, utilizing impedance spectroscopy and the Hebb-Wagner method. Additionally, first-principles calculations were combined to elucidate the reduction mechanism of Ce4+ in a hydrogen environment. The results show that Gd3+ doping significantly enhances the total conductivity of the electrolyte while suppressing the electronic conductivity. The total conductivity reached its maximum value at x = 0.20, which was 9.92 × 10−2 S cm−1 at 750 °C. At the same time, the electronic conductivity reached its minimum value, which was 1.25 × 10−7 S cm−1, indicating optimal ion conduction under the conditions of this study.
gd2o3掺杂的CeO2 （GDC）由于其优异的离子导电性被认为是一种很有前途的中温固体氧化物燃料电池（IT-SOFCs）电解质材料。然而，在SOFC工作条件下，Ce4+的减少会导致电子泄漏和稳定性下降，限制了其应用。本研究利用阻抗谱和Hebb-Wagner方法研究了氢气氛下不同Gd3+掺杂浓度对GDC电解质总电导率和电子电导率的影响。此外，结合第一性原理计算阐明了Ce4+在氢环境中的还原机理。结果表明，Gd3+的掺杂显著提高了电解质的总电导率，同时抑制了电解质的电子电导率。总电导率在x = 0.20时达到最大值，750℃时为9.92 × 10−2 S cm−1。同时，电子导电性达到最小值，为1.25 × 10−7 S cm−1，表明在本研究条件下离子导电性最佳。
{"title":"Unraveling the variation mechanism of ionic conductivity of Gd-doped ceria electrolyte under hydrogen atmosphere: A combined experimental and first-principles study","authors":"Mingyu Jia , Yuanyuan Liu , Shuting Li , Xiaoxia Chen , Changkun Cai , Shengli An","doi":"10.1016/j.mssp.2025.110367","DOIUrl":"10.1016/j.mssp.2025.110367","url":null,"abstract":"<div><div>Gd<sub>2</sub>O<sub>3</sub>-doped CeO<sub>2</sub> (GDC) is regarded as a promising electrolyte material for Intermediate-Temperature Solid Oxide Fuel Cells (IT-SOFCs) due to its excellent ionic conductivity. However, under SOFC operating conditions, the reduction of Ce<sup>4+</sup> leads to electron leakage and decreased stability, which limit its application. This study investigates the effects of different Gd<sup>3+</sup> doping concentrations on the total conductivity and electronic conductivity of the GDC electrolyte under a hydrogen atmosphere, utilizing impedance spectroscopy and the Hebb-Wagner method. Additionally, first-principles calculations were combined to elucidate the reduction mechanism of Ce<sup>4+</sup> in a hydrogen environment. The results show that Gd<sup>3+</sup> doping significantly enhances the total conductivity of the electrolyte while suppressing the electronic conductivity. The total conductivity reached its maximum value at x = 0.20, which was 9.92 × 10<sup>−2</sup> S cm<sup>−1</sup> at 750 °C. At the same time, the electronic conductivity reached its minimum value, which was 1.25 × 10<sup>−7</sup> S cm<sup>−1</sup>, indicating optimal ion conduction under the conditions of this study.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110367"},"PeriodicalIF":4.6,"publicationDate":"2026-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The development of flexible light-emitting devices with reliable colour tunability, mechanical durability, and high-voltage stability remains a significant challenge due to complex fabrication routes, inefficient thermal management, and limited control over emission characteristics in existing device architectures. In this work, we address these limitations by fabricating the flexible colour-tunable LED devices on indium tin oxide (ITO)-coated polyethylene terephthalate (PET) substrates, namely Device D1 (ITO/ZnO NRs/Ag), Device D2 (ITO/ZnO NRs–CdS/Ag), Device D3 (ITO/ZnO NRs–CuO/Ag), and Device D4 (ITO/ZnO NRs–CdS–CuO/Ag). Vertically aligned ZnO NRs were synthesized using hydrothermal method, while CdS and CuO nanoparticles were prepared via sol–gel processes, enabling a simple, cost-effective, and scalable fabrication strategy. Structural and compositional investigations using FESEM, EDX, AFM, UV–Vis, XRD, FTIR, XPS, and PL techniques confirmed the formation of ZnO–CdS–CuO heterostructures, revealing their crystallinity, chemical structure and bonding, elemental composition, and the presence of various defect states. The current–voltage (I–V) characteristics were performed for different LED devices D1, D2, D3, and D4 and their corresponding turn-on voltages were found to be 3.11 V, 2.45 V, 2.19 V, and 1.87 V, respectively. Multicolour electroluminescence was obtained by selectively combining ZnO, CdS, and CuO semiconductors. Under a forward bias ranging from 4 V to 50 V, the EL spectra displayed distinct emission peaks at ∼381 nm (UV-violet), ∼523 nm (green), ∼613 nm (orange), and ∼671 nm (deep red) corresponding to devices D1, D2, D3, and D4, respectively, spanning a wide UV–visible spectral range. The maximum EL intensities recorded at 35 V were ∼2123 a.u., ∼4359 a.u., ∼6572 a.u., and ∼10900 a.u. for D1, D2, D3, and D4, respectively. Device D4 showed excellent mechanical flexibility and operational stability, retaining stable red emission at bending angles of 30°, 60°, 90°, 120°, and 180° (flat condition) and after 1000 repeated bending cycles at a fixed 30° angle, with no significant change in emission intensity or peak position, and also withstanding high operating voltages up to 35 V without failure. Overall, the demonstrated colour tunability, mechanical flexibility, and high-voltage stability suggest that Device D4 is highly competitive with existing flexible LED technologies and holds strong potential for industrial applications in flexible, colour-tunable LED devices.
{"title":"Flexible multi-colour LEDs and junction-free emission","authors":"Neetu Verma , Manisha , Garima Poply , Tanmoy Majumder , Jugal Bori , Deepak Kumar , Jehova Jire L. Hmar","doi":"10.1016/j.mssp.2026.110481","DOIUrl":"10.1016/j.mssp.2026.110481","url":null,"abstract":"<div><div>The development of flexible light-emitting devices with reliable colour tunability, mechanical durability, and high-voltage stability remains a significant challenge due to complex fabrication routes, inefficient thermal management, and limited control over emission characteristics in existing device architectures. In this work, we address these limitations by fabricating the flexible colour-tunable LED devices on indium tin oxide (ITO)-coated polyethylene terephthalate (PET) substrates, namely Device D1 (ITO/ZnO NRs/Ag), Device D2 (ITO/ZnO NRs–CdS/Ag), Device D3 (ITO/ZnO NRs–CuO/Ag), and Device D4 (ITO/ZnO NRs–CdS–CuO/Ag). Vertically aligned ZnO NRs were synthesized using hydrothermal method, while CdS and CuO nanoparticles were prepared via sol–gel processes, enabling a simple, cost-effective, and scalable fabrication strategy. Structural and compositional investigations using FESEM, EDX, AFM, UV–Vis, XRD, FTIR, XPS, and PL techniques confirmed the formation of ZnO–CdS–CuO heterostructures, revealing their crystallinity, chemical structure and bonding, elemental composition, and the presence of various defect states. The current–voltage (I–V) characteristics were performed for different LED devices D1, D2, D3, and D4 and their corresponding turn-on voltages were found to be 3.11 V, 2.45 V, 2.19 V, and 1.87 V, respectively. Multicolour electroluminescence was obtained by selectively combining ZnO, CdS, and CuO semiconductors. Under a forward bias ranging from 4 V to 50 V, the EL spectra displayed distinct emission peaks at ∼381 nm (UV-violet), ∼523 nm (green), ∼613 nm (orange), and ∼671 nm (deep red) corresponding to devices D1, D2, D3, and D4, respectively, spanning a wide UV–visible spectral range. The maximum EL intensities recorded at 35 V were ∼2123 a.u., ∼4359 a.u., ∼6572 a.u., and ∼10900 a.u. for D1, D2, D3, and D4, respectively. Device D4 showed excellent mechanical flexibility and operational stability, retaining stable red emission at bending angles of 30°, 60°, 90°, 120°, and 180° (flat condition) and after 1000 repeated bending cycles at a fixed 30° angle, with no significant change in emission intensity or peak position, and also withstanding high operating voltages up to 35 V without failure. Overall, the demonstrated colour tunability, mechanical flexibility, and high-voltage stability suggest that Device D4 is highly competitive with existing flexible LED technologies and holds strong potential for industrial applications in flexible, colour-tunable LED devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110481"},"PeriodicalIF":4.6,"publicationDate":"2026-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-30DOI: 10.1016/j.mssp.2026.110471
Nianshun Zhao , Sha Lu , Juan Hu , Qin Gao , Li Wang , Taiming Sun , Jie Bao , Xiaofan Zheng , Zheng li
Dielectric ceramics have advantages such as high power density and fast charge-discharge speed, but their limited energy storage performance (ESP) under moderate electric fields limits their applications. In this study, Ba0.6Ag0.4Mg0.2Nb0.8O3 (BAMN) was introduced into 0.6Na0.5Bi0.5TiO3-0.4Sr0.7Bi0.2TiO3 (NBT-SBT) matrix. A systematic investigation was conducted into how BAMN affected the crystal structure, micromorphology, and electrical properties. Results indicate that BAMN addition decreases grain dimensions and enhances the development of polar nanodomains (PNRs). The sample with x = 0.09 demonstrates a recoverable energy storage density (Wrec) of 3.25 J/cm3 and an efficiency (η) of 82.15 % under an electric field of 230 kV/cm, along with outstanding thermal stability across the temperature range of 20–160 °C, stable performance over frequencies from 1 to 500 Hz, and robust fatigue resistance up to 105 cycles. Additionally, the ceramic with x = 0.09 exhibits short discharge time (t0.9 = 49.2 ns), large current density (CD = 1078.6 A/cm2), and power density (PD = 86.3 MW/cm3) at 160 kV/cm. The findings open up new avenues for innovating novel lead-free ceramics with superior ESP.
{"title":"Enhanced energy storage properties achieved in (1-x)(0.6Na0.5Bi0.5TiO3-0.4Sr0.7Bi0.2TiO3)-xBa0.6Ag0.4Mg0.2Nb0.8O3 ceramics at moderate electric field","authors":"Nianshun Zhao , Sha Lu , Juan Hu , Qin Gao , Li Wang , Taiming Sun , Jie Bao , Xiaofan Zheng , Zheng li","doi":"10.1016/j.mssp.2026.110471","DOIUrl":"10.1016/j.mssp.2026.110471","url":null,"abstract":"<div><div>Dielectric ceramics have advantages such as high power density and fast charge-discharge speed, but their limited energy storage performance (ESP) under moderate electric fields limits their applications. In this study, Ba<sub>0.6</sub>Ag<sub>0.4</sub>Mg<sub>0.2</sub>Nb<sub>0.8</sub>O<sub>3</sub> (BAMN) was introduced into 0.6Na<sub>0.5</sub>Bi<sub>0.5</sub>TiO<sub>3</sub>-0.4Sr<sub>0.7</sub>Bi<sub>0.2</sub>TiO<sub>3</sub> (NBT-SBT) matrix. A systematic investigation was conducted into how BAMN affected the crystal structure, micromorphology, and electrical properties. Results indicate that BAMN addition decreases grain dimensions and enhances the development of polar nanodomains (PNRs). The sample with <em>x</em> = 0.09 demonstrates a recoverable energy storage density (<em>W</em><sub>rec</sub>) of 3.25 J/cm<sup>3</sup> and an efficiency (<em>η</em>) of 82.15 % under an electric field of 230 kV/cm, along with outstanding thermal stability across the temperature range of 20–160 °C, stable performance over frequencies from 1 to 500 Hz, and robust fatigue resistance up to 10<sup>5</sup> cycles. Additionally, the ceramic with <em>x</em> = 0.09 exhibits short discharge time (<em>t</em><sub>0.9</sub> = 49.2 ns), large current density (<em>C</em><sub>D</sub> = 1078.6 A/cm<sup>2</sup>), and power density (<em>P</em><sub>D</sub> = 86.3 MW/cm<sup>3</sup>) at 160 kV/cm. The findings open up new avenues for innovating novel lead-free ceramics with superior ESP.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110471"},"PeriodicalIF":4.6,"publicationDate":"2026-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-29DOI: 10.1016/j.mssp.2026.110469
Wenjin Zhang , Quanjiang Lv , Siwei Liu , Mingyang Yu , Xuejun Zhao , Yifei Wang , Guiwu Liu , Guanjun Qiao , Junlin Liu
Lead selenide (PbSe) infrared photodetectors hold promise for uncooled operation but remain limited by high power consumption, suboptimal detection performance, and the scalability challenges of conventional chemical synthesis. Here, we demonstrate a PbSe/SnSe2 heterojunction photodetector fabricated via dual-source thermal evaporation, providing a physical vapor deposition (PVD) route toward scalable, self-powered devices. Structural and interfacial properties were confirmed by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, Kelvin probe force microscopy, Hall measurements, and optical absorption analysis. Strikingly, the heterojunction exhibits strong rectification behavior, ultra-low dark current, and broadband photoresponse from the visible (405 nm) to the near-infrared (1550 nm). Under zero bias at 1550 nm illumination, the device achieves an Ion/Ioff ratio of 9.8 × 102, a responsivity of 2.67 mA W−1, a detectivity of 5.84 × 1010 Jones, and fast rise/fall times of 1.43/1.44 ms. Furthermore, we demonstrate an optoelectronic “OR” logic gate enabling dual-band encrypted data transmission and decryption. These results highlight the potential of PbSe/SnSe2 heterojunctions for low-power, broadband detection and dual-band encrypted optical communication.
{"title":"Self-powered broadband photodetector based on vacuum-evaporated PbSe/SnSe2 heterostructure for encrypted optical communication","authors":"Wenjin Zhang , Quanjiang Lv , Siwei Liu , Mingyang Yu , Xuejun Zhao , Yifei Wang , Guiwu Liu , Guanjun Qiao , Junlin Liu","doi":"10.1016/j.mssp.2026.110469","DOIUrl":"10.1016/j.mssp.2026.110469","url":null,"abstract":"<div><div>Lead selenide (PbSe) infrared photodetectors hold promise for uncooled operation but remain limited by high power consumption, suboptimal detection performance, and the scalability challenges of conventional chemical synthesis. Here, we demonstrate a PbSe/SnSe<sub>2</sub> heterojunction photodetector fabricated via dual-source thermal evaporation, providing a physical vapor deposition (PVD) route toward scalable, self-powered devices. Structural and interfacial properties were confirmed by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, Kelvin probe force microscopy, Hall measurements, and optical absorption analysis. Strikingly, the heterojunction exhibits strong rectification behavior, ultra-low dark current, and broadband photoresponse from the visible (405 nm) to the near-infrared (1550 nm). Under zero bias at 1550 nm illumination, the device achieves an <em>I</em><sub><em>on</em></sub>/<em>I</em><sub><em>off</em></sub> ratio of 9.8 × 10<sup>2</sup>, a responsivity of 2.67 mA W<sup>−1</sup>, a detectivity of 5.84 × 10<sup>10</sup> Jones, and fast rise/fall times of 1.43/1.44 ms. Furthermore, we demonstrate an optoelectronic “OR” logic gate enabling dual-band encrypted data transmission and decryption. These results highlight the potential of PbSe/SnSe<sub>2</sub> heterojunctions for low-power, broadband detection and dual-band encrypted optical communication.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110469"},"PeriodicalIF":4.6,"publicationDate":"2026-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
As a core component in the field of flexible DC transmission, the press-pack Insulated Gate Bipolar Transistor (IGBT) is widely employed in a variety of power electronic applications. During short-circuit (SC) faults, the IGBT is simultaneously exposed to both high voltage and high current, and its SC behavior directly affects the reliability of the system. However, existing studies on the influencing factors of the SC characteristics of press-pack IGBT are relatively limited and fail to comprehensively capture the behavior under different operating conditions and chip parameters. This paper first establishes an experimental platform specifically designed to investigate the SC characteristics of press-pack IGBT, and analyzes the typical behaviors of short-circuit type I (SC-I) and type II (SC-II). Based on this platform, SC-I and SC-II waveforms are measured under varying conditions, including chip parameters, external circuit parameters, and environmental parameters. Furthermore, this study elucidates the distinct influences of these key parameters on SC-I versus SC-II characteristics and provides an in-depth discussion of the underlying mechanisms responsible for the observed differences. This study aims to elucidate the governing effects of multiple operating conditions and chip parameters on the SC-I and SC-II characteristics of press-pack IGBT and to explore the underlying physical mechanisms, which are of great significance for advancing the understanding of press-pack IGBT SC behavior and improving their SC withstand capability.
{"title":"Experimental study on the influencing factors of short-circuit characteristics of press-pack IGBTs","authors":"Ganyu Feng, Xuebao Li, Pengbo Miao, Yumeng Cai, Chen Tao, Chenran Jia, Peng Sun, Zhibin Zhao","doi":"10.1016/j.mssp.2026.110463","DOIUrl":"10.1016/j.mssp.2026.110463","url":null,"abstract":"<div><div>As a core component in the field of flexible DC transmission, the press-pack Insulated Gate Bipolar Transistor (IGBT) is widely employed in a variety of power electronic applications. During short-circuit (SC) faults, the IGBT is simultaneously exposed to both high voltage and high current, and its SC behavior directly affects the reliability of the system. However, existing studies on the influencing factors of the SC characteristics of press-pack IGBT are relatively limited and fail to comprehensively capture the behavior under different operating conditions and chip parameters. This paper first establishes an experimental platform specifically designed to investigate the SC characteristics of press-pack IGBT, and analyzes the typical behaviors of short-circuit type I (SC-I) and type II (SC-II). Based on this platform, SC-I and SC-II waveforms are measured under varying conditions, including chip parameters, external circuit parameters, and environmental parameters. Furthermore, this study elucidates the distinct influences of these key parameters on SC-I versus SC-II characteristics and provides an in-depth discussion of the underlying mechanisms responsible for the observed differences. This study aims to elucidate the governing effects of multiple operating conditions and chip parameters on the SC-I and SC-II characteristics of press-pack IGBT and to explore the underlying physical mechanisms, which are of great significance for advancing the understanding of press-pack IGBT SC behavior and improving their SC withstand capability.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110463"},"PeriodicalIF":4.6,"publicationDate":"2026-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-29DOI: 10.1016/j.mssp.2026.110476
Pin-Hong He , Ching-Ting Lee , Jone-Fang Chen , Hsin-Ying Lee
In this study, the monolithic inverters with complementary metal-oxide-semiconductor (CMOS) structure were fabricated by integrating depletion-mode (D-mode) and enhancement-mode (E-mode) GaN-based fin-gated multichannel metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs). The gate oxide layer of the D-mode devices was directly grown using a photoelectrochemical (PEC) oxidation method, while the gate oxide layers of the E-mode devices were fabricated using the PEC etching method and the ferroelectric charge trap gate-stacked Al2O3/HfO2/LiNbO3 oxide layers. To achieve unskewed inverter operation, the drain-source current of the D-mode devices was controlled by modulating the depth of gate-recessed regions created simultaneously during gate oxide layer growth. To study the impact of source field plates in D-mode and E-mode GaN-based fin-gated multichannel MOSHEMTs and the resulting monolithic inverters, source field plates with various lengths were incorporated. Their associated drain-source breakdown voltage increased, while the other characteristics were almost unaffected by the incorporation of the source field plate. However, the enhanced drain-source breakdown voltage was influenced by the length of the source field plate. It was found that the maximum drain-source breakdown voltage was obtained by placing the source field plate edge on the midpoint between the drain and gate. However, the high-frequency performance of the monolithic inverters was degraded by incorporating a long source field plate due to the induced additional parasitic capacitance.
{"title":"Monolithic inverters using GaN-based fin-gated multichannel complementary metal-oxide-semiconductor high-electron mobility transistors with source field plate","authors":"Pin-Hong He , Ching-Ting Lee , Jone-Fang Chen , Hsin-Ying Lee","doi":"10.1016/j.mssp.2026.110476","DOIUrl":"10.1016/j.mssp.2026.110476","url":null,"abstract":"<div><div>In this study, the monolithic inverters with complementary metal-oxide-semiconductor (CMOS) structure were fabricated by integrating depletion-mode (D-mode) and enhancement-mode (E-mode) GaN-based fin-gated multichannel metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs). The gate oxide layer of the D-mode devices was directly grown using a photoelectrochemical (PEC) oxidation method, while the gate oxide layers of the E-mode devices were fabricated using the PEC etching method and the ferroelectric charge trap gate-stacked Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub>/LiNbO<sub>3</sub> oxide layers. To achieve unskewed inverter operation, the drain-source current of the D-mode devices was controlled by modulating the depth of gate-recessed regions created simultaneously during gate oxide layer growth. To study the impact of source field plates in D-mode and E-mode GaN-based fin-gated multichannel MOSHEMTs and the resulting monolithic inverters, source field plates with various lengths were incorporated. Their associated drain-source breakdown voltage increased, while the other characteristics were almost unaffected by the incorporation of the source field plate. However, the enhanced drain-source breakdown voltage was influenced by the length of the source field plate. It was found that the maximum drain-source breakdown voltage was obtained by placing the source field plate edge on the midpoint between the drain and gate. However, the high-frequency performance of the monolithic inverters was degraded by incorporating a long source field plate due to the induced additional parasitic capacitance.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110476"},"PeriodicalIF":4.6,"publicationDate":"2026-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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