Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947452
Y. Kurashima, A. Maeda, H. Takagi
We demonstrate a direct transfer technique of Au thin layer onto electroplated Au surface from a surface of atomically smooth master wafer. An atomically smooth Au surface with a root mean square surface roughness of 0.6 nm could be transferred from the master wafer. We also examined its applicability to room-temperature Au-Au bonding in atmosphere. A high bonding strength of about 225 MPa was obtained.
{"title":"Direct transfer of atomically smooth Au film onto electroplated patterns for room-temperature Au-Au bonding in atmospheric air","authors":"Y. Kurashima, A. Maeda, H. Takagi","doi":"10.23919/LTB-3D.2017.7947452","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947452","url":null,"abstract":"We demonstrate a direct transfer technique of Au thin layer onto electroplated Au surface from a surface of atomically smooth master wafer. An atomically smooth Au surface with a root mean square surface roughness of 0.6 nm could be transferred from the master wafer. We also examined its applicability to room-temperature Au-Au bonding in atmosphere. A high bonding strength of about 225 MPa was obtained.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129760452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947455
Yuan-Hsuan Jhang, K. Tanabe, S. Iwamoto, Y. Arakawa
Ultraviolet (UV)/ozone is well known as an effective approach to clean and modify surfaces, and thus quite suitable for pretreating bonding surfaces to obtain a better bonding quality. We demonstrate UV/ozone-assisted GaAs/Si bonding with an enhanced bonding strength, and further apply this technology to integrate quantum dot (QD) lasers on Si substrate. The 600-μm-long bonded laser with manually cleaved facets exhibits a threshold current of 48 mA and a lasing wavelength of 1.3 μm at room temperature under continuous-wave (CW) operation, which is advantageous to being light sources for Si-based photonic integrated circuits (PICs).
{"title":"UV/Ozone-assisted bonding for InAs/GaAs quantum dot lasers on Si","authors":"Yuan-Hsuan Jhang, K. Tanabe, S. Iwamoto, Y. Arakawa","doi":"10.23919/LTB-3D.2017.7947455","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947455","url":null,"abstract":"Ultraviolet (UV)/ozone is well known as an effective approach to clean and modify surfaces, and thus quite suitable for pretreating bonding surfaces to obtain a better bonding quality. We demonstrate UV/ozone-assisted GaAs/Si bonding with an enhanced bonding strength, and further apply this technology to integrate quantum dot (QD) lasers on Si substrate. The 600-μm-long bonded laser with manually cleaved facets exhibits a threshold current of 48 mA and a lasing wavelength of 1.3 μm at room temperature under continuous-wave (CW) operation, which is advantageous to being light sources for Si-based photonic integrated circuits (PICs).","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128664172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947421
V. Larrey, L. Vauche, E. Veinberg-Vidal, M. Tedjini, C. Morales, F. Foumel, K. Abadie
Different GaAs//Si wafer bonding approaches are compared in order to fabricate III-V tandem solar cells. Bonding interface characteristics and electrical properties will be discussed for standard and improved direct wafer bonding sequences as well as for covalent bonding technique using SAB.
{"title":"Various GaAs to Si wafer bonding approaches for solar cells applications","authors":"V. Larrey, L. Vauche, E. Veinberg-Vidal, M. Tedjini, C. Morales, F. Foumel, K. Abadie","doi":"10.23919/LTB-3D.2017.7947421","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947421","url":null,"abstract":"Different GaAs//Si wafer bonding approaches are compared in order to fabricate III-V tandem solar cells. Bonding interface characteristics and electrical properties will be discussed for standard and improved direct wafer bonding sequences as well as for covalent bonding technique using SAB.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128052161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947419
N. Razek, C. Flötgen, V. Dragoi, M. Wimplinger
A new technology was developed allowing for room temperature covalent bonding. The surface preparation method allows for in situ native oxides removal and fabrication of oxide-free bonded interfaces which could be directly used in fabrication of various devices (e.g. solar cells).
{"title":"Room temperature fabrication of semiconductor interfaces","authors":"N. Razek, C. Flötgen, V. Dragoi, M. Wimplinger","doi":"10.23919/LTB-3D.2017.7947419","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947419","url":null,"abstract":"A new technology was developed allowing for room temperature covalent bonding. The surface preparation method allows for in situ native oxides removal and fabrication of oxide-free bonded interfaces which could be directly used in fabrication of various devices (e.g. solar cells).","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133349062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947411
M. Howlader
We overview heterogeneous integration technologies for micro- and nano-systems that allow for interaction with people and the environment. Some applications of the surface activated nanobonding, and sensors development to create an integrated water quality monitoring system will be discussed.
{"title":"Micro- and nano-systems integration — The next frontier","authors":"M. Howlader","doi":"10.23919/LTB-3D.2017.7947411","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947411","url":null,"abstract":"We overview heterogeneous integration technologies for micro- and nano-systems that allow for interaction with people and the environment. Some applications of the surface activated nanobonding, and sensors development to create an integrated water quality monitoring system will be discussed.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130608170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947420
F. Inoue, L. Peng, A. Phommahaxay, S.-W. Kim, J. de Vos, E. Sleeckx, A. Miller, G. Beyer, E. Beyne
The reduction of post annealing temperature for plasma activated dielectric bonding was achieved by using SiCN as dielectrics layer. The SiCN-SiCN bonding shows higher bond energy at 250 °C as compared to conventional SiOi-SiOi bonding. The surface and interface of the SiCN bonding dielectric layers were characterized by various quantitative and qualitative methodologies. This alternative bonding dielectric allows development of extremely thin 3D integration devices with minimal thermal budget at bonding step.
{"title":"Characterization of inorganic dielectric layers for low thermal budget wafer-to-wafer bonding","authors":"F. Inoue, L. Peng, A. Phommahaxay, S.-W. Kim, J. de Vos, E. Sleeckx, A. Miller, G. Beyer, E. Beyne","doi":"10.23919/LTB-3D.2017.7947420","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947420","url":null,"abstract":"The reduction of post annealing temperature for plasma activated dielectric bonding was achieved by using SiCN as dielectrics layer. The SiCN-SiCN bonding shows higher bond energy at 250 °C as compared to conventional SiOi-SiOi bonding. The surface and interface of the SiCN bonding dielectric layers were characterized by various quantitative and qualitative methodologies. This alternative bonding dielectric allows development of extremely thin 3D integration devices with minimal thermal budget at bonding step.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130924078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947463
Y. Morishita, M. Fujino, T. Suga
The Si-Si surface activated bonding interface was observed by transmission electron microscopy by comparing conventional room temperature bonding to liquid nitrogen temperature bonding. As result, the thickness of intermediate layer at low temperature was 7.3 nm, compared to 7.6 nm of that at room temperature.
{"title":"Surface activated bonding of Si wafers at liquid nitrogen temperature","authors":"Y. Morishita, M. Fujino, T. Suga","doi":"10.23919/LTB-3D.2017.7947463","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947463","url":null,"abstract":"The Si-Si surface activated bonding interface was observed by transmission electron microscopy by comparing conventional room temperature bonding to liquid nitrogen temperature bonding. As result, the thickness of intermediate layer at low temperature was 7.3 nm, compared to 7.6 nm of that at room temperature.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"116 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120976522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947444
H. Kon, M. Uomoto, N. Nakajima, T. Nakaya, T. Shimatsu
For sapphire and various metals (Al alloys, Cu alloys, and stainless steel) bonded at room temperature using Au films, shear strength was assessed in this study. Results show extremely high shear strength of all samples: greater than 10 kN (50 MPa).
{"title":"Shear strength of room-temperature-bonded sapphire and metal substrates using Au films","authors":"H. Kon, M. Uomoto, N. Nakajima, T. Nakaya, T. Shimatsu","doi":"10.23919/LTB-3D.2017.7947444","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947444","url":null,"abstract":"For sapphire and various metals (Al alloys, Cu alloys, and stainless steel) bonded at room temperature using Au films, shear strength was assessed in this study. Results show extremely high shear strength of all samples: greater than 10 kN (50 MPa).","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122810354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947424
R. Yan, D. Jena, H. Xing
Van der Waals (vdW) bonded heterojunctions composed of diverse two-dimensional (2D) layered materials are emerging as a novel material platform that exhibits intriguing physical phenomena and promises compelling device applications. Here we discuss the development of tunneling devices based on vdW bonded heterojunctions, specially focusing on an Esaki diode with broken gap alignment. Beyond that, an electric oscillator built upon this diode is also demonstrated.
{"title":"Tunneling devices over van der Waals bonded hetero-interface","authors":"R. Yan, D. Jena, H. Xing","doi":"10.23919/LTB-3D.2017.7947424","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947424","url":null,"abstract":"Van der Waals (vdW) bonded heterojunctions composed of diverse two-dimensional (2D) layered materials are emerging as a novel material platform that exhibits intriguing physical phenomena and promises compelling device applications. Here we discuss the development of tunneling devices based on vdW bonded heterojunctions, specially focusing on an Esaki diode with broken gap alignment. Beyond that, an electric oscillator built upon this diode is also demonstrated.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123206749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947472
N. Hayasaka, T. Nishiyama, Y. Onuki, N. Kamada, Xu Han, Periyanayagam Gandhi Kallarasan, Kazuki Uchida, Hirokazu Sugiyama, Masaki Aikawa, K. Shimomura
Lasing characteristics dependent on the bonding temperature for 1.5μm GalnAsP LD grown on directly bonded InP/Si substrate was successfully obtained. We have grown laser structure by MOVPE using InP/Si substrate, and fabricated broad area edge-emitted LD. For the preparation of InP/Si substrate, the temperature during direct bonding process was changed to 350, 400, and 450 °C. The electrical and lasing characteristics dependent on the bonding temperature were compared.
{"title":"Lasing characteristics of MOVPE grown 1.5μΜ GalnAsP LD using directly bonded InP/Si substrate","authors":"N. Hayasaka, T. Nishiyama, Y. Onuki, N. Kamada, Xu Han, Periyanayagam Gandhi Kallarasan, Kazuki Uchida, Hirokazu Sugiyama, Masaki Aikawa, K. Shimomura","doi":"10.23919/LTB-3D.2017.7947472","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947472","url":null,"abstract":"Lasing characteristics dependent on the bonding temperature for 1.5μm GalnAsP LD grown on directly bonded InP/Si substrate was successfully obtained. We have grown laser structure by MOVPE using InP/Si substrate, and fabricated broad area edge-emitted LD. For the preparation of InP/Si substrate, the temperature during direct bonding process was changed to 350, 400, and 450 °C. The electrical and lasing characteristics dependent on the bonding temperature were compared.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124613857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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