Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947479
S. Yahagi, H. Ishihara, M. Ishii, S. Kumagai, M. Sasaki
Plasmonic thermal emitter is promising for improving the efficiency of the gas sensor generating the infrared matched with the gas absorption band. The combination with the microheater in the vacuum packaged setup will further reduce the thermal loss. Here, considering CO2 gas sensing, the grating design robust against the dimension error is examined.
{"title":"Grating design for packaged wavelength selective infrared emitter using surface plasmon polariton","authors":"S. Yahagi, H. Ishihara, M. Ishii, S. Kumagai, M. Sasaki","doi":"10.23919/LTB-3D.2017.7947479","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947479","url":null,"abstract":"Plasmonic thermal emitter is promising for improving the efficiency of the gas sensor generating the infrared matched with the gas absorption band. The combination with the microheater in the vacuum packaged setup will further reduce the thermal loss. Here, considering CO2 gas sensing, the grating design robust against the dimension error is examined.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125570789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947472
N. Hayasaka, T. Nishiyama, Y. Onuki, N. Kamada, Xu Han, Periyanayagam Gandhi Kallarasan, Kazuki Uchida, Hirokazu Sugiyama, Masaki Aikawa, K. Shimomura
Lasing characteristics dependent on the bonding temperature for 1.5μm GalnAsP LD grown on directly bonded InP/Si substrate was successfully obtained. We have grown laser structure by MOVPE using InP/Si substrate, and fabricated broad area edge-emitted LD. For the preparation of InP/Si substrate, the temperature during direct bonding process was changed to 350, 400, and 450 °C. The electrical and lasing characteristics dependent on the bonding temperature were compared.
{"title":"Lasing characteristics of MOVPE grown 1.5μΜ GalnAsP LD using directly bonded InP/Si substrate","authors":"N. Hayasaka, T. Nishiyama, Y. Onuki, N. Kamada, Xu Han, Periyanayagam Gandhi Kallarasan, Kazuki Uchida, Hirokazu Sugiyama, Masaki Aikawa, K. Shimomura","doi":"10.23919/LTB-3D.2017.7947472","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947472","url":null,"abstract":"Lasing characteristics dependent on the bonding temperature for 1.5μm GalnAsP LD grown on directly bonded InP/Si substrate was successfully obtained. We have grown laser structure by MOVPE using InP/Si substrate, and fabricated broad area edge-emitted LD. For the preparation of InP/Si substrate, the temperature during direct bonding process was changed to 350, 400, and 450 °C. The electrical and lasing characteristics dependent on the bonding temperature were compared.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124613857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947432
Menglong Sun, Fengtian Hu, Longlong Ju, A. Hu, Ming Li, Huiqin Ling, T. Hang
A novel low-temperature solid-state bonding method that Cu microcones coated with Ag and Ag buffer has been proposed. Thin Ag layer was used to prevent the oxidation of Cu microcones and Ag layer of several micrometers was used as a buffer layer between Cu microcones and Cu bumps. No brittle IMCs formed in the interfaces.
{"title":"A low-temperature solid-state bonding method using Ag-modified Cu microcones and Ag buffer","authors":"Menglong Sun, Fengtian Hu, Longlong Ju, A. Hu, Ming Li, Huiqin Ling, T. Hang","doi":"10.23919/LTB-3D.2017.7947432","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947432","url":null,"abstract":"A novel low-temperature solid-state bonding method that Cu microcones coated with Ag and Ag buffer has been proposed. Thin Ag layer was used to prevent the oxidation of Cu microcones and Ag layer of several micrometers was used as a buffer layer between Cu microcones and Cu bumps. No brittle IMCs formed in the interfaces.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"426 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126986859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947416
F. Fournel, V. Larrey, C. Morales, C. Bridoux, H. Moriceau, F. Rieutord
Low temperature direct bonding technologies are now widely used for many applications. Mechanisms of some of these technics will be presented. The different way to obtain low temperature direct bonding will then be compared with their respective advantages and drawbacks.
{"title":"Low temperature direct bonding comparison","authors":"F. Fournel, V. Larrey, C. Morales, C. Bridoux, H. Moriceau, F. Rieutord","doi":"10.23919/LTB-3D.2017.7947416","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947416","url":null,"abstract":"Low temperature direct bonding technologies are now widely used for many applications. Mechanisms of some of these technics will be presented. The different way to obtain low temperature direct bonding will then be compared with their respective advantages and drawbacks.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129301347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947426
K. Lee, Shuyu Bao, K. Lee, E. Fitzgerald, C. S. Tan
A method to integrate III-V compound semiconductors (GaN HEMT, InGaN LED, InGaAs HEMT or InGaP LED) with Si-CMOS on a common Si substrate is demonstrated. The Si-CMOS layer is temporarily held on a Si handle wafer. Another III-V/Si substrate is then bonded to the Si-CMOS containing handle wafer. Finally, the handle wafer is released to realize the Si-CMOS on III-V/Si substrate. Through this method, a new generation of system with more functionality, better energy efficiency, and smaller form factor can be realized.
{"title":"Integration of 200 mm Si-CMOS and III-V materials through wafer bonding","authors":"K. Lee, Shuyu Bao, K. Lee, E. Fitzgerald, C. S. Tan","doi":"10.23919/LTB-3D.2017.7947426","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947426","url":null,"abstract":"A method to integrate III-V compound semiconductors (GaN HEMT, InGaN LED, InGaAs HEMT or InGaP LED) with Si-CMOS on a common Si substrate is demonstrated. The Si-CMOS layer is temporarily held on a Si handle wafer. Another III-V/Si substrate is then bonded to the Si-CMOS containing handle wafer. Finally, the handle wafer is released to realize the Si-CMOS on III-V/Si substrate. Through this method, a new generation of system with more functionality, better energy efficiency, and smaller form factor can be realized.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127652133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947475
S. Ishihara, E. Tochigi, N. Shibata, Y. Ikuhara
Two a-alumina bicrystals doped with titanium were fabricated in different atmospheres: air and Ar-H2 mixed gas. The grain boundaries (GBs) of the bicrystals were investigated by transmission electron microscopy (TEM) and scanning TEM (STEM). Their atomic structures are reported in detail.
{"title":"Atomic structure of Ti-doped alumina grain boundaries fabricated in air and reducing atmosphere","authors":"S. Ishihara, E. Tochigi, N. Shibata, Y. Ikuhara","doi":"10.23919/LTB-3D.2017.7947475","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947475","url":null,"abstract":"Two a-alumina bicrystals doped with titanium were fabricated in different atmospheres: air and Ar-H2 mixed gas. The grain boundaries (GBs) of the bicrystals were investigated by transmission electron microscopy (TEM) and scanning TEM (STEM). Their atomic structures are reported in detail.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129868864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947402
M. Ichikawa, N. Eboshi, T. Kemmochi, M. Sano, T. Mukai, M. Uomoto, T. Shimatsu
Enhancement of light transmittance was examined for sapphire or synthetic quartz glass wafers bonded with thin Al films using atomic diffusion bonding (ADB). The results indicate that the thin Al film at the bonded interface diffuses into the wafer by subsequent laser irradiation, which enhances the light transmittance through the bonded interface.
{"title":"Enhancement of light transmittance for wafers bonded with thin Al films using atomic diffusion bonding and subsequent laser irradiation","authors":"M. Ichikawa, N. Eboshi, T. Kemmochi, M. Sano, T. Mukai, M. Uomoto, T. Shimatsu","doi":"10.23919/LTB-3D.2017.7947402","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947402","url":null,"abstract":"Enhancement of light transmittance was examined for sapphire or synthetic quartz glass wafers bonded with thin Al films using atomic diffusion bonding (ADB). The results indicate that the thin Al film at the bonded interface diffuses into the wafer by subsequent laser irradiation, which enhances the light transmittance through the bonded interface.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"130 9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129171927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947473
S. Yamajo, J. Liang, N. Shigekawa
Electrical properties of p+-GaAs/n-GaN and n+-GaAs/n-GaN, heterojunctions fabricated by using surface-activated bonding (SAB) are investigated. The measured C-V characteristics of p+-GaAs/n-GaN and n+-GaAs/n-GaN junctions are in quantitative agreement with modeled ones obtained for the interface states density and the conduction-band discontinuity of 1.5×1014 cm−2 eV−1 and 0.63 eV, respectively.
{"title":"Analysis of the influence of interface charges on the electrical characteristics of GaAs/GaN junctions","authors":"S. Yamajo, J. Liang, N. Shigekawa","doi":"10.23919/LTB-3D.2017.7947473","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947473","url":null,"abstract":"Electrical properties of p<sup>+</sup>-GaAs/n-GaN and n<sup>+</sup>-GaAs/n-GaN, heterojunctions fabricated by using surface-activated bonding (SAB) are investigated. The measured C-V characteristics of p<sup>+</sup>-GaAs/n-GaN and n<sup>+</sup>-GaAs/n-GaN junctions are in quantitative agreement with modeled ones obtained for the interface states density and the conduction-band discontinuity of 1.5×10<sup>14</sup> cm<sup>−2</sup> eV<sup>−1</sup> and 0.63 eV, respectively.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114709650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947461
K. Furuyama, K. Yamanaka, E. Higurashi, T. Suga
This study investigates the effect of hydrogen radical treatment on indium surface oxide removal, and the observation of re-oxidation post treatment. It was found that hydrogen radical treatment successfully removes indium surface oxide at temperatures as low as 170 °C, and prevents re-oxidation compared to active surfaces obtained by bombardment.
{"title":"Hydrogen radical treatment for indium surface oxide removal and re-oxidation behaviour","authors":"K. Furuyama, K. Yamanaka, E. Higurashi, T. Suga","doi":"10.23919/LTB-3D.2017.7947461","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947461","url":null,"abstract":"This study investigates the effect of hydrogen radical treatment on indium surface oxide removal, and the observation of re-oxidation post treatment. It was found that hydrogen radical treatment successfully removes indium surface oxide at temperatures as low as 170 °C, and prevents re-oxidation compared to active surfaces obtained by bombardment.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128085972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947398
M. Kohyama, Vikas Sharma, Shingo Tanaka, Y. Shiihara
Local-energy scheme based on energy density within the PAW-GGA method has been applied to Fe(001)/TiC(001) coherent interfaces. Via Bader integration of the energy density, local energies of atomic regions are decided without the gauge dependent problem. By comparing the surface and interface supercells, we can clarify the contribution of each surface atom to the interface adhesion. The interface with Fe atoms located on C atoms shows quite different features from those of the interface with Fe atoms located on Ti atoms.
{"title":"Ab-initio local-energy analysis of Fe/TiC interfaces","authors":"M. Kohyama, Vikas Sharma, Shingo Tanaka, Y. Shiihara","doi":"10.23919/LTB-3D.2017.7947398","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947398","url":null,"abstract":"Local-energy scheme based on energy density within the PAW-GGA method has been applied to Fe(001)/TiC(001) coherent interfaces. Via Bader integration of the energy density, local energies of atomic regions are decided without the gauge dependent problem. By comparing the surface and interface supercells, we can clarify the contribution of each surface atom to the interface adhesion. The interface with Fe atoms located on C atoms shows quite different features from those of the interface with Fe atoms located on Ti atoms.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132386189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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