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2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)最新文献

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Distributed face cooling scheme for tiny laser power scale-up 微型激光功率放大的分布式面冷却方案
Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947404
A. Kausas, Lihe Zheng, T. Taira
In this work, we have compared the performance of single rod crystal to a newly developed Distributed Face Cooling (DFC) structure which was made by surface activated bonding technology and allowed to combine transparent heatsink to a gain crystal at room temperature. The Sapphire and Nd3+:YAG crystal plates were combined in this fashion to produce nine crystal chip which was further used to obtain CW output. Slope efficiencies obtained in this experiment were 27% and 64% for single rod and DFC structure, respectively. This is the first demonstration of distributed face cooling system outperformed conventionally single rod system.
在这项工作中,我们将单棒晶体的性能与新开发的分布式表面冷却(DFC)结构进行了比较,该结构由表面活化键合技术制成,并允许在室温下将透明散热器与增益晶体结合。以这种方式将蓝宝石和Nd3+:YAG晶片组合成9块晶片,进一步用于获得连续波输出。本实验获得的单杆和DFC结构的斜率效率分别为27%和64%。这是首次证明分布式表面冷却系统优于传统的单棒系统。
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引用次数: 0
Temporary wafer carrier for thin wafer handling 用于薄晶片搬运的临时晶片载体
Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947457
V. Masteika, T. Rogers, R. Santilli
We present a novel design of re-usable wafer carrier for safe manual or robotic handling of wafers from tens of μm in thickness. The carrier wafer stack then remains stable through a wide variety temperature, pressure and chemical environments. The carried wafer can then be easily debonded in a bespoke debonding tool with no residue or cleaning steps.
我们提出了一种可重复使用的晶圆载体的新设计,用于安全地手动或机器人处理几十μm厚度的晶圆。然后,载体晶圆堆在各种温度、压力和化学环境下保持稳定。然后,携带的晶圆片可以在定制的脱粘工具中轻松脱粘,没有残留物或清洁步骤。
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引用次数: 0
Low temperature Cu/In bonding for 3D integration 低温Cu/In键合用于3D集成
Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947413
I. Panchenko, Steffen Bickel, Jörg Meyer, Maik Müller, J. Wolf
This study represents the results of Cu/In bonding based on solid-liquid interdiffusion (SLID) principle for 3D integration. Fine-pitch interconnects were successfully fabricated at the bonding temperature of 170 °C. The final microstructure of the interconnects consists of Cu and Cu/In intermetallic compounds (IMCs) and it is described in detail. The influence of the isothermal storage on the microstructure development is investigated as well.
本研究代表了基于固液互扩散(slip)原理的Cu/In键合三维集成的结果。在170℃的键合温度下成功制备了细间距互连。本文详细描述了铜和铜/铟金属间化合物(IMCs)的最终微观结构。研究了等温贮藏对合金微观组织发育的影响。
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引用次数: 1
Effects of electromagnetic radiation exposure on direct Cu bonding 电磁辐射暴露对铜直接键合的影响
Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947439
Jenn-Ming Song, Sin-Yong Liang, Po-Hao Chiang, Shang-Kun Huang, Y. Chiu, D. Tarng, C. Hung
An innovative pre-treatment to enhance Cu-to-Cu bonding through the exposure of electromagnetic radiations including flash light and near infrared rays is first proposed in this study. Short period of electromagnetic radiation exposure can significantly improve the bonding strength. It can be ascribed to the sudden heating/cooling and thus compressive residual stresses which enhance the diffusion of copper atoms and direct bonding.
本研究首次提出了一种创新的预处理方法,通过暴露电磁辐射(包括闪光灯和近红外线)来增强cu - cu键合。短时间的电磁辐射暴露可以显著提高粘接强度。这可以归因于突然的加热/冷却和压缩残余应力,从而增强了铜原子的扩散和直接键合。
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引用次数: 0
Stacking wafer with multi-stepped silicon micro-trenches to deposit superconducting material for magnetic energy storage 用多级硅微沟槽堆叠晶片,沉积超导材料,用于磁能存储
Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947453
C. Hsu, S. Kumagai, M. Sasaki, Y. Suzuki, T. Hioki, J. Noh, O. Takai, H. Watanabe, H. Doy, T. Motohiro
A 45m-long spiral trench is fabricated as the coil mold for the compact superconducting magnetic energy storage. Multiple patterning can reduce the disconnection caused by the defects. The wafers are polished. Single NbN coil is confirmed to show the superconducting performance.
制作了45米长的螺旋沟槽作为紧凑超导储能线圈模具。多重图案化可以减少由缺陷引起的断开。晶圆片被抛光。单个NbN线圈被证实具有超导性能。
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引用次数: 0
Gas cluster ion beam irradiation for wafer bonding 气团离子束辐照用于晶圆键合
Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947401
N. Toyoda, Tomoya Sasaki, S. Ikeda, I. Yamada
Preliminary experiments of gas cluster ion beam (GCIB) irradiation for wafer bonding were conducted. Unique irradiation effects of GCIB, such as low-damage irradiation and surface smoothing effects, will be beneficial for surface activated bonding. From XPS, AFM measurements, Ar-GCIB irradiation at oblique incidence removed native oxide on Cu films efficiently without roughening. Cu-Cu bond increased with the acceleration voltage of Ar-GCIB. There is a correlation between the bond strength and the contact angle reduction due to surface smoothing and oxide removal by Ar-GCIB.
进行了气团离子束辐照键合硅片的初步实验。GCIB独特的辐照效应,如低损伤辐照和表面光滑效应,将有利于表面活化键合。从XPS, AFM测量中,斜入射Ar-GCIB辐射有效地去除Cu膜上的天然氧化物,而不会使其变粗。随着Ar-GCIB加速电压的增加,Cu-Cu键增加。由于表面平滑和Ar-GCIB去除氧化物而导致的接触角减小与结合强度之间存在相关性。
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引用次数: 0
Feasibility study on ultrafine-pitch Cu-Cu bonding using directed self-assembly (DSA) 定向自组装超细间距Cu-Cu键合的可行性研究
Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947440
M. Murugesan, T. Fukushima, K. Mori, H. Hashimoto, J. Bea, M. Koyanagi
A feasibility study was carried out for self-formation of metal wiring between LSI chips containing ultrafine-pitch Cu landing pads by employing a new concept of directed self-assembly (DSA) phenomena. Preliminary results suggest that it is highly feasible to electrically interconnect two LSI chips having Cu landing pads at 3μm pitch interval. Electrical contact between the flip-chip bonded dies was self-formed by dispersed Sn nano-dots in PS-b-PMMA (2:1) copolymer mixture after vacuum annealing at 280 °C.
采用定向自组装(DSA)现象的新概念,对含有超细间距铜着陆垫的LSI芯片间金属布线自形成的可行性进行了研究。初步结果表明,以3μm间距将两个具有Cu着陆垫的LSI芯片电互连是高度可行的。在280°C真空退火后,PS-b-PMMA(2:1)共聚物混合物中分散的Sn纳米点自形成倒装片键合模之间的电接触。
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引用次数: 2
Hydrogen radical treatment for surface oxide removal from copper 氢自由基法去除铜表面氧化物
Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947468
S. Shin, E. Higurashi, K. Furuyama, T. Suga
Hydrogen radicals were used to remove the oxide layer of copper metal. Successful removal of the oxide layer was detected using X-ray photoelectron spectroscopy (XPS), where the visible color change has occurred after the treatment. Period of re-oxidization was further analyzed which then was compared to argon ion beam and fast atom beam (FAB) treatment. The approach has introduced a highly promising technique to remove oxide layers of metals.
采用氢自由基法去除金属铜的氧化层。利用x射线光电子能谱(XPS)检测到氧化层的成功去除,处理后发生了可见的颜色变化。进一步分析了再氧化周期,并与氩离子束和快原子束(FAB)处理进行了比较。该方法引入了一种非常有前途的技术来去除金属的氧化层。
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引用次数: 3
N2-plasma activated bonding for GaInAsP/SOI hybrid lasers GaInAsP/SOI混合激光器的n2等离子体激活键合
Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947425
N. Nishiyama, Y. Hayashi, Jun-ichi Suzuki, S. Arai
Bonding conditions and characteristics of N2-plasma activated bonding for GaInAsP/SOI hybrid lasers are explained. SEM and TEM images reveal high quality bonding interface and less damage quantum wells, which are enough to realize hybrid lasers.
阐述了GaInAsP/SOI混合激光器的n2等离子体激活键合条件和键合特性。SEM和TEM图像显示了高质量的键合界面和较小的损伤量子阱,足以实现混合激光。
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引用次数: 0
Automatic Maszara testing jig 自动Maszara测试夹具
Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947458
V. Masteika, T. Rogers, R. Santilli, S. Fraser, M. Y. A. Aioubi
We have produced a new, automated Maszara testing tool. This tool can be used to measure the bond strength across the entire interface of a bonded wafer pair and produce a bond strength map. The tool can also be used for IR inspection.
我们生产了一种新的、自动化的Maszara测试工具。该工具可用于测量键合晶圆对整个界面的键合强度,并生成键合强度图。该工具还可用于红外检测。
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引用次数: 0
期刊
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)
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