Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947422
N. Shigekawa, S. Shimizu, Jianbo Liang, Masato Shingo, K. Shiojima, M. Arai
We report on the photoresponse of p-Si/n-SiC heterojunctions and the electrical characteristics of SiC/Si hetero-junction bipolar transistors (HBTs), both of which are fabricated by bonding SiC and Si layers. We find that in the photoresponse measurements the square root of the quantum yield almost linearly depends on the photon energy and the absorption edge (1.2 v) is close to the bandgap of Si (1.12 eV), which implies that the achieved signal is attributed to the minority electrons optically excited in the p-Si layer and collected in the n-SiC layer across the hetero-interfaces. The characteristics of the SiC/Si HBTs reveal the common-base current gain α of « 0.9 for the base-collector bias voltage of 0 V at room temperature. These results indicate that SiC/Si hetero-interfaces are applicable for novel minority-carrier-based semiconductor devices.
{"title":"Transport characteristics of optically-excited and electrically-injected minority electrons across p-Si/n-SiC hetero-interfaces","authors":"N. Shigekawa, S. Shimizu, Jianbo Liang, Masato Shingo, K. Shiojima, M. Arai","doi":"10.23919/LTB-3D.2017.7947422","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947422","url":null,"abstract":"We report on the photoresponse of p-Si/n-SiC heterojunctions and the electrical characteristics of SiC/Si hetero-junction bipolar transistors (HBTs), both of which are fabricated by bonding SiC and Si layers. We find that in the photoresponse measurements the square root of the quantum yield almost linearly depends on the photon energy and the absorption edge (1.2 v) is close to the bandgap of Si (1.12 eV), which implies that the achieved signal is attributed to the minority electrons optically excited in the p-Si layer and collected in the n-SiC layer across the hetero-interfaces. The characteristics of the SiC/Si HBTs reveal the common-base current gain α of « 0.9 for the base-collector bias voltage of 0 V at room temperature. These results indicate that SiC/Si hetero-interfaces are applicable for novel minority-carrier-based semiconductor devices.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133740168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947467
Sin-Yong Liang, Po-Hao Chiang, Zong-Yu Xie, Jenn-Ming Song, Shang-Kun Huang, Y. Chiu, D. Tarng, C. Hung
Cu-to-Cu direct bonding is one of the key technologies for 3D (three-dimensional) chip stacking. This research proposes a new concept to enhance Cu-Cu direct bonding through the control of residual stresses on bonding surface. Compressive residual stress induced by near-infrared radiation (NIR) enhances the diffusion of copper atoms and thus direct bonding. Subjected to thermal compression bonding at 250°C for 5 min under 10 MPa in N2, joint strength of 28.9MPa between two Cu films exposed with NIR for 10 sec can be obtained.
cu - cu直接键合是三维芯片叠层的关键技术之一。本研究提出了通过控制键合表面残余应力来增强Cu-Cu直接键合的新思路。近红外辐射(NIR)引起的压缩残余应力增强了铜原子的扩散，从而促进了直接键合。在N2中，在250℃、10 MPa、5 min条件下进行热压键合，近红外暴露10秒后，两层Cu膜的连接强度可达28.9MPa。
{"title":"Low temperature direct Cu bonding assisted by residual stress","authors":"Sin-Yong Liang, Po-Hao Chiang, Zong-Yu Xie, Jenn-Ming Song, Shang-Kun Huang, Y. Chiu, D. Tarng, C. Hung","doi":"10.23919/LTB-3D.2017.7947467","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947467","url":null,"abstract":"Cu-to-Cu direct bonding is one of the key technologies for 3D (three-dimensional) chip stacking. This research proposes a new concept to enhance Cu-Cu direct bonding through the control of residual stresses on bonding surface. Compressive residual stress induced by near-infrared radiation (NIR) enhances the diffusion of copper atoms and thus direct bonding. Subjected to thermal compression bonding at 250°C for 5 min under 10 MPa in N2, joint strength of 28.9MPa between two Cu films exposed with NIR for 10 sec can be obtained.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124260880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947445
T. Higashiguchi, Syunnya Yamauchi, Yusuke Fujii, Natsumi Shinozaki, Takuto Ogura, M. Uomoto, T. Shimatsu, T. Miura, T. Mocek
We demonstrate the laser oscillation of an Yb-doped Y2O3 composite disk by use of atomic diffusion bonding (ADB) in room temperature. The continuous wave laser power was observed to be 6 W. We also measured the behavior of the wavefront produced by ADB.
{"title":"Demonstration of laser oscillation of an Yb-doped Y2O3 composite disk by use of atomic diffusion bonding in room temperature","authors":"T. Higashiguchi, Syunnya Yamauchi, Yusuke Fujii, Natsumi Shinozaki, Takuto Ogura, M. Uomoto, T. Shimatsu, T. Miura, T. Mocek","doi":"10.23919/LTB-3D.2017.7947445","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947445","url":null,"abstract":"We demonstrate the laser oscillation of an Yb-doped Y2O3 composite disk by use of atomic diffusion bonding (ADB) in room temperature. The continuous wave laser power was observed to be 6 W. We also measured the behavior of the wavefront produced by ADB.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121909411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947436
Taufique Z. Redhwan, Arif Ul Alam, Y. Haddara, M. Howlader
We report direct bonding of liquid crystal polymer and copper film for electrochemical sensing for the first time. A peel strength of 683 g/cm was observed indicating strong adhesion. X-ray photoelectron and electrochemical impedance spectroscopies were used to characterize the sensing electrodes.
{"title":"Bonding mechanism and electrochemical impedance of directly bonded liquid crystal polymer and copper","authors":"Taufique Z. Redhwan, Arif Ul Alam, Y. Haddara, M. Howlader","doi":"10.23919/LTB-3D.2017.7947436","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947436","url":null,"abstract":"We report direct bonding of liquid crystal polymer and copper film for electrochemical sensing for the first time. A peel strength of 683 g/cm was observed indicating strong adhesion. X-ray photoelectron and electrochemical impedance spectroscopies were used to characterize the sensing electrodes.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122095353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947429
Ting-Jui Wu, Jen-Hsiang Liu, Jenn-Ming Song
It has been proposed that Cu-Ag alloys exhibit longer eletromigration life time than Cu as well as superior electrochemical migration resistance than Ag. Our group developed a new kind of Cu-Ag composite paste which is capable of achieving bonding at low processing temperatures under low bonding pressure. It comprises carboxylate-coated Ag nanoparticles, spary-pyrolyz ed Ag submicron particles and copper formate, which can be applied to interconnection and bonding as well. After being bonded at 160°C under loading of 1.6 MPa for 30 min, the joints with Cu substrates possess bonding strength of 15.9MPa and those with Ag surface finish showing shear strength of 19.4 MPa. The electrical resistivity of the sintered structure thus obtained is 50.8 μΩ-cm.
{"title":"Low-temperature low-pressure bonding by nanocomposites","authors":"Ting-Jui Wu, Jen-Hsiang Liu, Jenn-Ming Song","doi":"10.23919/LTB-3D.2017.7947429","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947429","url":null,"abstract":"It has been proposed that Cu-Ag alloys exhibit longer eletromigration life time than Cu as well as superior electrochemical migration resistance than Ag. Our group developed a new kind of Cu-Ag composite paste which is capable of achieving bonding at low processing temperatures under low bonding pressure. It comprises carboxylate-coated Ag nanoparticles, spary-pyrolyz ed Ag submicron particles and copper formate, which can be applied to interconnection and bonding as well. After being bonded at 160°C under loading of 1.6 MPa for 30 min, the joints with Cu substrates possess bonding strength of 15.9MPa and those with Ag surface finish showing shear strength of 19.4 MPa. The electrical resistivity of the sintered structure thus obtained is 50.8 μΩ-cm.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125891313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947433
F. Predan, S. Heckelmann, M. Niemeyer, D. Lackner, A. Kovács, R. Dunin‐Borkowski, W. Jager, F. Dimroth
We used surface-activated wafer-bonding (SAB) at low temperatures for the fabrication of advanced four-junction solar cells. The bonded heterojunctions are optimized regarding high electrical conductivity to avoid voltage losses especially for devices operating with high-current densities. Wafer-bonded 4-junction solar cells are today reaching the highest efficiencies for sunlight conversion into electricity and offer possible applications for space as well as concentrating photovoltaics.
{"title":"Fabrication of highly efficient four-junction solar cells by surface-activated wafer-bonding","authors":"F. Predan, S. Heckelmann, M. Niemeyer, D. Lackner, A. Kovács, R. Dunin‐Borkowski, W. Jager, F. Dimroth","doi":"10.23919/LTB-3D.2017.7947433","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947433","url":null,"abstract":"We used surface-activated wafer-bonding (SAB) at low temperatures for the fabrication of advanced four-junction solar cells. The bonded heterojunctions are optimized regarding high electrical conductivity to avoid voltage losses especially for devices operating with high-current densities. Wafer-bonded 4-junction solar cells are today reaching the highest efficiencies for sunlight conversion into electricity and offer possible applications for space as well as concentrating photovoltaics.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124849167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947447
Jianbo Liang, T. Ogawa, K. Araki, T. Kamioka, N. Shigekawa
The electrical properties of n-Si/ITO/n-Si, n-Si/ITO/p-Si, and p-Si/ITO/n-Si junctions fabricated by surface activated bonding (SAB) were investigated. The current-voltage (I-V) characteristics of n-Si/ITO/n-Si, n-Si/ITO/p-Si, and p-Si/ITO/n-Si junctions showed excellent linearity. The interface resistance of n-Si/ITO/p-Si junctions was found to be 0.0249 O·cm2, which is the smallest value observed in all the samples.
{"title":"Electrical conduction of Si/ITO/Si junctions fabricated by surface activated bonding","authors":"Jianbo Liang, T. Ogawa, K. Araki, T. Kamioka, N. Shigekawa","doi":"10.23919/LTB-3D.2017.7947447","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947447","url":null,"abstract":"The electrical properties of n-Si/ITO/n-Si, n-Si/ITO/p-Si, and p-Si/ITO/n-Si junctions fabricated by surface activated bonding (SAB) were investigated. The current-voltage (I-V) characteristics of n-Si/ITO/n-Si, n-Si/ITO/p-Si, and p-Si/ITO/n-Si junctions showed excellent linearity. The interface resistance of n-Si/ITO/p-Si junctions was found to be 0.0249 O·cm2, which is the smallest value observed in all the samples.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"239 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128644277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947399
F. Mu, K. Iguchi, H. Nakazawa, Yoshikazu Takahashi, M. Fujino, T. Suga
Room temperature direct wafer bonding of SiC-SiC by standard surface-activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam were compared in terms of bonding energy, interface structure and composition. Compared with that obtained by standard SAB, the bonding interface obtained by modified SAB with a Si-containing Ar ion beam is >30% stronger, which should be due to the in situ Si compensation during surface activation by the Si-containing Ar ion beam.
{"title":"Room temperature SiC-SiC direct wafer bonding by SAB methods","authors":"F. Mu, K. Iguchi, H. Nakazawa, Yoshikazu Takahashi, M. Fujino, T. Suga","doi":"10.23919/LTB-3D.2017.7947399","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947399","url":null,"abstract":"Room temperature direct wafer bonding of SiC-SiC by standard surface-activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam were compared in terms of bonding energy, interface structure and composition. Compared with that obtained by standard SAB, the bonding interface obtained by modified SAB with a Si-containing Ar ion beam is >30% stronger, which should be due to the in situ Si compensation during surface activation by the Si-containing Ar ion beam.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127123977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947407
M. Taklo, K. Schjølberg-Henriksen, N. Malik, E. Poppe, S. Moe, T. Finstad
Wafer-level thermocompression bonding (TCB) using aluminum (Al) is presented as a hermetic sealing method for MEMS. The process is a CMOS compatible alternative to TCB using metals like gold (Au) and copper (Cu), which are problematic with respect to cross contamination in labs. Au and Cu are commonly used for TCB and the oxidation of these metals is limited (Au) or easily controlled (Cu). However, despite Al oxidation, our experimental results and theoretical considerations show that TCB using Al is feasible even at temperatures down to 300–350 °C using a commercial bonder without in-situ surface treatment capability.
{"title":"Al-Al wafer-level thermocompression bonding applied for MEMS","authors":"M. Taklo, K. Schjølberg-Henriksen, N. Malik, E. Poppe, S. Moe, T. Finstad","doi":"10.23919/LTB-3D.2017.7947407","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947407","url":null,"abstract":"Wafer-level thermocompression bonding (TCB) using aluminum (Al) is presented as a hermetic sealing method for MEMS. The process is a CMOS compatible alternative to TCB using metals like gold (Au) and copper (Cu), which are problematic with respect to cross contamination in labs. Au and Cu are commonly used for TCB and the oxidation of these metals is limited (Au) or easily controlled (Cu). However, despite Al oxidation, our experimental results and theoretical considerations show that TCB using Al is feasible even at temperatures down to 300–350 °C using a commercial bonder without in-situ surface treatment capability.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125489445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947435
Yang Xu, Shengkai Wang, Yinghui Wang, Dapeng Chen, Zhi Jin, Xinyu Liu
A modified water glass adhesive bonding method using spot pressing bonding technique (SPB) is proposed. The mechanism of water glass bonding is investigated, and the voids formation has been discussed. The combined method achieved low temperature adhesive bonding and minimized the influence of water molecules to bonding interface.
{"title":"A modified water glass adhesive bonding method using spot pressing bonding technique","authors":"Yang Xu, Shengkai Wang, Yinghui Wang, Dapeng Chen, Zhi Jin, Xinyu Liu","doi":"10.23919/LTB-3D.2017.7947435","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947435","url":null,"abstract":"A modified water glass adhesive bonding method using spot pressing bonding technique (SPB) is proposed. The mechanism of water glass bonding is investigated, and the voids formation has been discussed. The combined method achieved low temperature adhesive bonding and minimized the influence of water molecules to bonding interface.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"IA-15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126557481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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