Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947462
S. Ikeda, T. Sasaki, N. Toyoda
Gas cluster ion beam (GCIB) was used for surface activation bonding (SAB). Since GCIB modifies only near surface, low-damage surface modification and activation are expected. In this study, Cu-Cu bonding with GCIB irradiation was selected as a preliminary study. XPS and contact angle measurement showed that surface oxide on Cu was removed efficiently by oblique incidence Ar-GCIB at 5–20 kV. Also, sequential irradiation of GCIB at normal and oblique incidence realized smooth Cu surface. After that Cu-Cu bonding strength was investigated by the tensile test.
{"title":"Optimization of GCIB irradiation conditions for surface activated bonding","authors":"S. Ikeda, T. Sasaki, N. Toyoda","doi":"10.23919/LTB-3D.2017.7947462","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947462","url":null,"abstract":"Gas cluster ion beam (GCIB) was used for surface activation bonding (SAB). Since GCIB modifies only near surface, low-damage surface modification and activation are expected. In this study, Cu-Cu bonding with GCIB irradiation was selected as a preliminary study. XPS and contact angle measurement showed that surface oxide on Cu was removed efficiently by oblique incidence Ar-GCIB at 5–20 kV. Also, sequential irradiation of GCIB at normal and oblique incidence realized smooth Cu surface. After that Cu-Cu bonding strength was investigated by the tensile test.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"47 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132811095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947476
H. Azuma, E. Higurashi, Y. Kunimune, T. Suga
Si wafers with smooth Ti thin films were contacted in air atmosphere and annealed at a range of temperatures up to 300 °C to increase the bonding strength. Root-mean-square (RMS) surface roughness of 30 nm thick electron beam evaporated Ti films on Si wafers measured by atomic force microscope (AFM) was 0.3 nm. Bonding strength measured by blade insertion test reached 1.0 J/m2. The proposed wafer bonding process has the advantage of being simple and inexpensive.
{"title":"Wafer bonding using smooth titanium thin films in air atmosphere","authors":"H. Azuma, E. Higurashi, Y. Kunimune, T. Suga","doi":"10.23919/LTB-3D.2017.7947476","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947476","url":null,"abstract":"Si wafers with smooth Ti thin films were contacted in air atmosphere and annealed at a range of temperatures up to 300 °C to increase the bonding strength. Root-mean-square (RMS) surface roughness of 30 nm thick electron beam evaporated Ti films on Si wafers measured by atomic force microscope (AFM) was 0.3 nm. Bonding strength measured by blade insertion test reached 1.0 J/m2. The proposed wafer bonding process has the advantage of being simple and inexpensive.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131918679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947477
Nagito Takehara, T. Naito, K. Tanabe
To manufacture high-performance heterostructured semiconductor devices inexpensively, we investigated the correlation among conditions of surface treatment, particle density, and bonding strength in non-cleanroom environment. We systematically examined schemes of cleaning wafers, hydrophilic / hydrophobic treatments, and conditions of bonding, and obtained strong bonds sufficient in device use.
{"title":"Understanding the environmental influence on semiconductor wafer bonding","authors":"Nagito Takehara, T. Naito, K. Tanabe","doi":"10.23919/LTB-3D.2017.7947477","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947477","url":null,"abstract":"To manufacture high-performance heterostructured semiconductor devices inexpensively, we investigated the correlation among conditions of surface treatment, particle density, and bonding strength in non-cleanroom environment. We systematically examined schemes of cleaning wafers, hydrophilic / hydrophobic treatments, and conditions of bonding, and obtained strong bonds sufficient in device use.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134555198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947431
A. Panigrahi, C. H. Kumar, Tamal Ghosh, S. Vanjari, S. Singh
Enhanced Cu diffusion, Cu surface passivation, and surface smoothness at the bonding interface are the key requirements for high quality Copper-Copper (Cu-Cu) thermocompression bonding. In our previous work, we have demonstrated the usage of optimized Manganin metal alloy of 3 nm not only helps in passivating the Cu surface even at high temperature (<300°C) but also reduces the surface roughness to about 0.8 nm which substantially led to high quality Cu-Cu bonding. In this paper, we demonstrate an ultra-fine pitch Cu-Cu thermocompression bonding using an optimized ultra-thin damascene compatible Manganin metal alloy passivation. This engineering surface passivation approach has led to high quality bonding at sub 200° C temperature and a nominal contact force of 4kN. Furthermore, electrical characterization using modified kelvin structure, and reliability assessment of this bonded structure was investigated under multiple current stressing, temperature cycling test and the results indicate excellent stability without electrical performance degradation. This practical finding has immense potential to leads into practical realization of 3D IC integration.
{"title":"Optimized ultra-thin Manganin alloy passivated fine-pitch damascene compatible Cu-Cu bonding at sub 200°C for 3D IC integration","authors":"A. Panigrahi, C. H. Kumar, Tamal Ghosh, S. Vanjari, S. Singh","doi":"10.23919/LTB-3D.2017.7947431","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947431","url":null,"abstract":"Enhanced Cu diffusion, Cu surface passivation, and surface smoothness at the bonding interface are the key requirements for high quality Copper-Copper (Cu-Cu) thermocompression bonding. In our previous work, we have demonstrated the usage of optimized Manganin metal alloy of 3 nm not only helps in passivating the Cu surface even at high temperature (<300°C) but also reduces the surface roughness to about 0.8 nm which substantially led to high quality Cu-Cu bonding. In this paper, we demonstrate an ultra-fine pitch Cu-Cu thermocompression bonding using an optimized ultra-thin damascene compatible Manganin metal alloy passivation. This engineering surface passivation approach has led to high quality bonding at sub 200° C temperature and a nominal contact force of 4kN. Furthermore, electrical characterization using modified kelvin structure, and reliability assessment of this bonded structure was investigated under multiple current stressing, temperature cycling test and the results indicate excellent stability without electrical performance degradation. This practical finding has immense potential to leads into practical realization of 3D IC integration.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115772691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947469
Kathleen Jerchel, T. Suga
This paper functions as a feasibility study to prove increase of thermal performance of patterned Cu with an analytic model that takes into account the surface roughness. The thermal resistance is described as a function of the bonded surface area.
{"title":"Influence of geometric pattern design and surface roughness on thermal performance of copper to copper bonding","authors":"Kathleen Jerchel, T. Suga","doi":"10.23919/LTB-3D.2017.7947469","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947469","url":null,"abstract":"This paper functions as a feasibility study to prove increase of thermal performance of patterned Cu with an analytic model that takes into account the surface roughness. The thermal resistance is described as a function of the bonded surface area.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"683 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116109995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947418
Ran He, A. Yamauchi, T. Suga
We report a newly developed sequential plasma activation bonding (SPAB) process for direct bonding between quartz glass wafers. The novel SPAB method in the present paper employed RIE N2 plasma activation followed by or instead of the O2 plasma activation before the N radical activation. Experimental results are reported and discussed with comparison with the conventional SPAB process.
{"title":"Novel sequential plasma activation method for direct glass bonding","authors":"Ran He, A. Yamauchi, T. Suga","doi":"10.23919/LTB-3D.2017.7947418","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947418","url":null,"abstract":"We report a newly developed sequential plasma activation bonding (SPAB) process for direct bonding between quartz glass wafers. The novel SPAB method in the present paper employed RIE N2 plasma activation followed by or instead of the O2 plasma activation before the N radical activation. Experimental results are reported and discussed with comparison with the conventional SPAB process.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123436728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947451
T. Matsumae, T. Suga
This study investigates the use of room temperature bonding for layer transfer process to reduce contaminants on a transferred material. It was found that resist residues on transferred graphene were significantly reduced using surface activated bonding at room temperature in comparison of thermal compression bonding at 250 °C. Surface activated bonding can provide a platform for layer transfer process suitable for 2D materials integration.
{"title":"2D material transfer using room temperature bonding","authors":"T. Matsumae, T. Suga","doi":"10.23919/LTB-3D.2017.7947451","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947451","url":null,"abstract":"This study investigates the use of room temperature bonding for layer transfer process to reduce contaminants on a transferred material. It was found that resist residues on transferred graphene were significantly reduced using surface activated bonding at room temperature in comparison of thermal compression bonding at 250 °C. Surface activated bonding can provide a platform for layer transfer process suitable for 2D materials integration.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"34-35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123620380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947405
T. Rogers, V. Masteika, R. Santilli
Surface passivation free direct bonding is emerging as an important wafer bonding technique. We present an innovative approach to removing passivation layers and bonding in a single tool via simultaneous dual plasma treatment.
{"title":"Wafer bonding tool including dual plasma capability for in-situ sputter etching prior to aligned bonding","authors":"T. Rogers, V. Masteika, R. Santilli","doi":"10.23919/LTB-3D.2017.7947405","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947405","url":null,"abstract":"Surface passivation free direct bonding is emerging as an important wafer bonding technique. We present an innovative approach to removing passivation layers and bonding in a single tool via simultaneous dual plasma treatment.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125225100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947438
M. Goorsky, K. Schjølberg-Henriksen, B. Beekley, N. Marathe, K. Mani, A. Bajwa, S. Iyer
Au-Au based interconnect bonding (and Cu-Cu bonding) is advanced by addressing the roles of initial surface roughness, chemical mechanical polishing, bonding pressure and temperature. Focused ion beam sectioning through the bonded interface is used to determine grain growth, void evolution, and void faceting.
{"title":"Low temperature metal-metal bonding for heterogeneous integration and performance scaling","authors":"M. Goorsky, K. Schjølberg-Henriksen, B. Beekley, N. Marathe, K. Mani, A. Bajwa, S. Iyer","doi":"10.23919/LTB-3D.2017.7947438","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947438","url":null,"abstract":"Au-Au based interconnect bonding (and Cu-Cu bonding) is advanced by addressing the roles of initial surface roughness, chemical mechanical polishing, bonding pressure and temperature. Focused ion beam sectioning through the bonded interface is used to determine grain growth, void evolution, and void faceting.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133269494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947449
Kentaroh Watanabe, Erina Nagaoka, Daiji Yamashita, K. Toprasertpong, Y. Nakano, M. Sugiyama
A thickness controlled dual junction GaAs//Si solar cell for current matching was fabricated and demonstrated. The optically thin GaAs top cell grown by metal-organic vapor phase epitaxy (MOVPE) was directly integrated on the Si bottom cell by surface-activated bonding (SAB) method. Owing to the optically thin (∼300 nm) GaAs top sub-cell, the operation of current-matched dual junction cell was observed under the standard 1 SUN illumination.
{"title":"Development of GaAs//Si current-balanced dual junction solar cell integrated by surface-activated bonding","authors":"Kentaroh Watanabe, Erina Nagaoka, Daiji Yamashita, K. Toprasertpong, Y. Nakano, M. Sugiyama","doi":"10.23919/LTB-3D.2017.7947449","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947449","url":null,"abstract":"A thickness controlled dual junction GaAs//Si solar cell for current matching was fabricated and demonstrated. The optically thin GaAs top cell grown by metal-organic vapor phase epitaxy (MOVPE) was directly integrated on the Si bottom cell by surface-activated bonding (SAB) method. Owing to the optically thin (∼300 nm) GaAs top sub-cell, the operation of current-matched dual junction cell was observed under the standard 1 SUN illumination.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133804076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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