In the health monitoring and safety assessments of concrete structures, ultrasonic non-destructive testing (NDT) technology has become an indispensable tool due to its non-destructive nature, efficiency, and precision. However, when used in inspecting irregular concrete surfaces, traditional planar ultrasonic transducers often encounter energy loss and signal attenuation induced by poor interface coupling, which significantly reduces the accuracy and reliability of the test results. To address this problem, this article proposes a point-contact dry coupling ultrasonic transducer solution, which enables efficient acquisition of ultrasonic signals within concrete without the need for couplants. By combining an array imaging system with a total focusing algorithm, this study not only significantly enhances the convenience and signal-to-noise ratio (SNR) of concrete ultrasonic imaging, but also opens new pathways for ultrasonic NDT technology in concrete.
{"title":"Research on Dry Coupling Technology in the Ultrasonic Non-Destructive Testing of Concrete.","authors":"Jun Li, Zeyu Chen","doi":"10.3390/mi16010072","DOIUrl":"10.3390/mi16010072","url":null,"abstract":"<p><p>In the health monitoring and safety assessments of concrete structures, ultrasonic non-destructive testing (NDT) technology has become an indispensable tool due to its non-destructive nature, efficiency, and precision. However, when used in inspecting irregular concrete surfaces, traditional planar ultrasonic transducers often encounter energy loss and signal attenuation induced by poor interface coupling, which significantly reduces the accuracy and reliability of the test results. To address this problem, this article proposes a point-contact dry coupling ultrasonic transducer solution, which enables efficient acquisition of ultrasonic signals within concrete without the need for couplants. By combining an array imaging system with a total focusing algorithm, this study not only significantly enhances the convenience and signal-to-noise ratio (SNR) of concrete ultrasonic imaging, but also opens new pathways for ultrasonic NDT technology in concrete.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 1","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11767472/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143039958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The growing demand for high-speed data transfer and ultralow latency in wireless networks-on-chips (WiNoC) has spurred exploration into innovative communication paradigms. Recent advancements highlight the potential of the terahertz (THz) band, a largely untapped frequency range, for enabling ultrafast tera-bit-per-second links in chip multiprocessors. However, the ultrashort duration of THz pulses, often in the femtosecond range, makes synchronization a critical challenge, as even minor timing errors can cause significant data loss. This study introduces a preamble-aided noncoherent synchronization scheme for time-of-arrival (ToA) estimation in pulse-based WiNoC communication operating in the THz band (0.02-0.8 THz). The scheme transmits the preamble, a known sequence of THz pulses, at the beginning of each symbol, allowing the energy-detection receiver to collect and analyze the energy of the preamble across multiple integrators. The integrator with maximum energy output is then used to estimate the symbol's ToA. A preamble design based on maximum pulse energy constraints is also presented. Performance evaluations demonstrate a synchronization probability exceeding 0.98 for distances under 10 mm at a signal-to-noise ratio of 20 dB, with a normalized mean squared error below 10-2. This scheme enhances synchronization reliability, supporting energy-efficient, high-performance WiNoCs for future multicore systems.
{"title":"Preamble Design and Noncoherent ToA Estimation for Pulse-Based Wireless Networks-on-Chip Communications in the Terahertz Band.","authors":"Pankaj Singh, Sung-Yoon Jung","doi":"10.3390/mi16010070","DOIUrl":"10.3390/mi16010070","url":null,"abstract":"<p><p>The growing demand for high-speed data transfer and ultralow latency in wireless networks-on-chips (WiNoC) has spurred exploration into innovative communication paradigms. Recent advancements highlight the potential of the terahertz (THz) band, a largely untapped frequency range, for enabling ultrafast tera-bit-per-second links in chip multiprocessors. However, the ultrashort duration of THz pulses, often in the femtosecond range, makes synchronization a critical challenge, as even minor timing errors can cause significant data loss. This study introduces a preamble-aided noncoherent synchronization scheme for time-of-arrival (ToA) estimation in pulse-based WiNoC communication operating in the THz band (0.02-0.8 THz). The scheme transmits the preamble, a known sequence of THz pulses, at the beginning of each symbol, allowing the energy-detection receiver to collect and analyze the energy of the preamble across multiple integrators. The integrator with maximum energy output is then used to estimate the symbol's ToA. A preamble design based on maximum pulse energy constraints is also presented. Performance evaluations demonstrate a synchronization probability exceeding 0.98 for distances under 10 mm at a signal-to-noise ratio of 20 dB, with a normalized mean squared error below 10-2. This scheme enhances synchronization reliability, supporting energy-efficient, high-performance WiNoCs for future multicore systems.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 1","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11767894/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143039907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Libor Rufer, Shubham Shubham, Haoran Wang, Tom Miller, Petr Honzík, Vittorio Ferrari
Microelectromechanical systems (MEMS) refer to miniaturized mechanical and electro-mechanical elements that are fabricated through microelectronic processes [...].
{"title":"Editorial for the Special Issue on Micromachined Acoustic Transducers for Audio-Frequency Range.","authors":"Libor Rufer, Shubham Shubham, Haoran Wang, Tom Miller, Petr Honzík, Vittorio Ferrari","doi":"10.3390/mi16010067","DOIUrl":"10.3390/mi16010067","url":null,"abstract":"<p><p>Microelectromechanical systems (MEMS) refer to miniaturized mechanical and electro-mechanical elements that are fabricated through microelectronic processes [...].</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 1","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11767971/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143038723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hualiang Zhou, Hao Yu, Zhiyang Zou, Zhantao Su, Zheng Xu, Weitao Yang, Chaohui He
Relay protection devices must operate continuously throughout the year without anomalies. With the integration of advanced technology and process chips in secondary equipment, new risks need to be addressed to ensure the reliability of these relay protection devices. One such risk is the impact of α-particles inducing single event effects (SEEs) on the secondary equipment. To date, there has been limited assessment of the effects of α-particles on relay protection devices from a system perspective. This study evaluates the impact of SEE on relay protection devices through a Monte Carlo simulation, which is verified by α-particle radiation, fault injection, and fault tree analysis. It discusses the influence of SEEs with and without hardening measures in place. Additionally, this study examines the soft error probability when the target processor runs both general workloads and specific application workloads. The current research proposes a low-cost and effective reliability assessment method for secondary equipment considering single event effects. The findings provide new insights for the enhancement of future electric power grid systems.
{"title":"Relay Protection Device Reliability Assessment Through Radiation, Fault Injection and Fault Tree Analysis.","authors":"Hualiang Zhou, Hao Yu, Zhiyang Zou, Zhantao Su, Zheng Xu, Weitao Yang, Chaohui He","doi":"10.3390/mi16010069","DOIUrl":"10.3390/mi16010069","url":null,"abstract":"<p><p>Relay protection devices must operate continuously throughout the year without anomalies. With the integration of advanced technology and process chips in secondary equipment, new risks need to be addressed to ensure the reliability of these relay protection devices. One such risk is the impact of α-particles inducing single event effects (SEEs) on the secondary equipment. To date, there has been limited assessment of the effects of α-particles on relay protection devices from a system perspective. This study evaluates the impact of SEE on relay protection devices through a Monte Carlo simulation, which is verified by α-particle radiation, fault injection, and fault tree analysis. It discusses the influence of SEEs with and without hardening measures in place. Additionally, this study examines the soft error probability when the target processor runs both general workloads and specific application workloads. The current research proposes a low-cost and effective reliability assessment method for secondary equipment considering single event effects. The findings provide new insights for the enhancement of future electric power grid systems.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 1","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11767707/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143039957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Peiqi Jiao, Bin Fan, Qiang Xin, Xiang Wu, Hong Wang
Inductively coupled plasma (ICP), a non-contact optical processing method, has been widely used in the preparation of fused quartz. However, the thermal effect during processing inevitably affects the stability of the removal rate, reduces the processing accuracy, and restricts the further development of plasma processing. This paper analyzes the critical temperature that affects the changes in plasma removal depth, establishes a heat transfer model for plasma jet processing through simulations, derives the heat conduction equation during processing, and obtains the critical radius corresponding to the critical temperature related to the processing speed. Additionally, this work analyzes the path temperature of the grating track used in processing and obtains the path temperature variation curve. Based on the critical radius, a staggered grating track was proposed, which verified that this track can effectively control the path temperature, thereby suppressing the error caused by the thermal effect of processing. This study not only helps to gain a deeper understanding of the heat transfer process in plasma machining, but also provides a basis for achieving high-precision plasma machining path optimization schemes.
{"title":"Machining Path Optimization of Inductively Coupled Plasma Based on Surface Heat Transfer Model.","authors":"Peiqi Jiao, Bin Fan, Qiang Xin, Xiang Wu, Hong Wang","doi":"10.3390/mi16010071","DOIUrl":"10.3390/mi16010071","url":null,"abstract":"<p><p>Inductively coupled plasma (ICP), a non-contact optical processing method, has been widely used in the preparation of fused quartz. However, the thermal effect during processing inevitably affects the stability of the removal rate, reduces the processing accuracy, and restricts the further development of plasma processing. This paper analyzes the critical temperature that affects the changes in plasma removal depth, establishes a heat transfer model for plasma jet processing through simulations, derives the heat conduction equation during processing, and obtains the critical radius corresponding to the critical temperature related to the processing speed. Additionally, this work analyzes the path temperature of the grating track used in processing and obtains the path temperature variation curve. Based on the critical radius, a staggered grating track was proposed, which verified that this track can effectively control the path temperature, thereby suppressing the error caused by the thermal effect of processing. This study not only helps to gain a deeper understanding of the heat transfer process in plasma machining, but also provides a basis for achieving high-precision plasma machining path optimization schemes.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 1","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11768036/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143039730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
David Seixas Esteves, Amanda Melo, Sónia Alves, Nelson Durães, Maria C Paiva, Elsa W Sequeiros
Magnetic field-assisted control of magnetite location is a promising strategy for developing flexible, electrically conductive sensors with enhanced performance and adjustable properties. This study investigates the effect of static magnetic fields applied on thermoplastic elastomer (TPE) composites with magnetite and multi-walled carbon nanotubes (MWCNT). The composites were prepared by compression moulding and the magnetic field was applied on the mould cavity during processing. Composites were prepared with a range of concentrations of magnetite (1, 3, and 6 wt.%) and MWCNT (1 and 3 wt.%). The effect of particle concentration on composite viscosity was investigated. Rheological analysis showed that MWCNTs significantly increased the composite viscosity while magnetite had minimal impact, ensuring stable processing and facilitating particle orientation under a static magnetic field. Particle orientation and electrical conductivity were evaluated for the composites prepared with different particle concentrations under different processing temperatures. Magnetic field application at 190 °C enhanced magnetite/MWCNT interactions, substantially reducing electrical resistivity while preserving thermal stability. The composites showed no degradation at 220 °C and above, demonstrating suitability for high-temperature applications requiring thermal resilience. Furthermore, magnetite's magnetic response facilitated precise sensor positioning and strong adhesion to polyimide substrates at 220 °C. These findings demonstrate a scalable and adaptable approach for enhancing sensor performance and positioning, with broad potential in flexible electronics.
{"title":"Magnetic Field-Assisted Orientation and Positioning of Magnetite for Flexible and Electrically Conductive Sensors.","authors":"David Seixas Esteves, Amanda Melo, Sónia Alves, Nelson Durães, Maria C Paiva, Elsa W Sequeiros","doi":"10.3390/mi16010068","DOIUrl":"10.3390/mi16010068","url":null,"abstract":"<p><p>Magnetic field-assisted control of magnetite location is a promising strategy for developing flexible, electrically conductive sensors with enhanced performance and adjustable properties. This study investigates the effect of static magnetic fields applied on thermoplastic elastomer (TPE) composites with magnetite and multi-walled carbon nanotubes (MWCNT). The composites were prepared by compression moulding and the magnetic field was applied on the mould cavity during processing. Composites were prepared with a range of concentrations of magnetite (1, 3, and 6 wt.%) and MWCNT (1 and 3 wt.%). The effect of particle concentration on composite viscosity was investigated. Rheological analysis showed that MWCNTs significantly increased the composite viscosity while magnetite had minimal impact, ensuring stable processing and facilitating particle orientation under a static magnetic field. Particle orientation and electrical conductivity were evaluated for the composites prepared with different particle concentrations under different processing temperatures. Magnetic field application at 190 °C enhanced magnetite/MWCNT interactions, substantially reducing electrical resistivity while preserving thermal stability. The composites showed no degradation at 220 °C and above, demonstrating suitability for high-temperature applications requiring thermal resilience. Furthermore, magnetite's magnetic response facilitated precise sensor positioning and strong adhesion to polyimide substrates at 220 °C. These findings demonstrate a scalable and adaptable approach for enhancing sensor performance and positioning, with broad potential in flexible electronics.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 1","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11768084/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143039664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Rong Chen, Shanshan He, Xiansong He, Jin Xie, Xicong Zhu
In microfluidic chips, glass free-form microchannels have obvious advantages in thermochemical stability and biocompatibility compared to polymer-based channels, but they face challenges in processing morphology and quality. Hence, picosecond laser etching with galvanometer scanning is proposed to machine spiral microfluidic channels on a glass substrate. The objective is to disperse and sort microparticles from a glass microchip that is difficult to cut. First, the micropillar array and the spiral microchannel were designed to disperse and sort the particles in microchips, respectively; then, a scanning path with a scanning interval of 5 μm was designed according to the spot diameter in picosecond laser etching; next, the effects of laser power, scanning speed and accumulation times were experimentally investigated regarding the morphology of spiral microchannels; finally, the microfluidic flowing test with 5 μm and 10 μm microparticles was performed to analyze the dispersing and sorting performance. It was shown that reducing the laser power and accumulation times alongside increasing the scanning speed effectively reduced the channel depth and surface roughness. The channel surface roughness reached about 500 nm or less when the laser power was 9 W, the scanning speed was 1000 mm/s, and the cumulative number was 4. The etched micropillar array, with a width of 89 μm and an interval of 97 μm, was able to disperse the different microparticles into the spiral microchannel. Moreover, the spiral-structured channel, with an aspect ratio of 0.51, significantly influenced the velocity gradient distribution, particle focusing, and stratification. At flow rates of 300-600 μL/min, the microparticles produced stable focusing bands. Through the etched microchip, mixed 5 μm and 10 μm microparticles were sorted by stable laminar flow at flow rates of 400-500 μL/min. These findings contribute to the design and processing of high-performance glass microfluidic chips for dispersion and sorting.
{"title":"Picosecond Laser Etching of Glass Spiral Microfluidic Channel for Microparticles Dispersion and Sorting.","authors":"Rong Chen, Shanshan He, Xiansong He, Jin Xie, Xicong Zhu","doi":"10.3390/mi16010066","DOIUrl":"10.3390/mi16010066","url":null,"abstract":"<p><p>In microfluidic chips, glass free-form microchannels have obvious advantages in thermochemical stability and biocompatibility compared to polymer-based channels, but they face challenges in processing morphology and quality. Hence, picosecond laser etching with galvanometer scanning is proposed to machine spiral microfluidic channels on a glass substrate. The objective is to disperse and sort microparticles from a glass microchip that is difficult to cut. First, the micropillar array and the spiral microchannel were designed to disperse and sort the particles in microchips, respectively; then, a scanning path with a scanning interval of 5 μm was designed according to the spot diameter in picosecond laser etching; next, the effects of laser power, scanning speed and accumulation times were experimentally investigated regarding the morphology of spiral microchannels; finally, the microfluidic flowing test with 5 μm and 10 μm microparticles was performed to analyze the dispersing and sorting performance. It was shown that reducing the laser power and accumulation times alongside increasing the scanning speed effectively reduced the channel depth and surface roughness. The channel surface roughness reached about 500 nm or less when the laser power was 9 W, the scanning speed was 1000 mm/s, and the cumulative number was 4. The etched micropillar array, with a width of 89 μm and an interval of 97 μm, was able to disperse the different microparticles into the spiral microchannel. Moreover, the spiral-structured channel, with an aspect ratio of 0.51, significantly influenced the velocity gradient distribution, particle focusing, and stratification. At flow rates of 300-600 μL/min, the microparticles produced stable focusing bands. Through the etched microchip, mixed 5 μm and 10 μm microparticles were sorted by stable laminar flow at flow rates of 400-500 μL/min. These findings contribute to the design and processing of high-performance glass microfluidic chips for dispersion and sorting.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 1","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11767390/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143039904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In low intermediate frequency (low-IF) receivers, image interference rejection is one of the core tasks to be accomplished. Conventional active polyphase filters (APPFs) are unable to have a sufficient image rejection ratio (IRR) at high operating frequencies due to the degradation of the IRR by the amplitude and phase imbalances produced by the secondary pole. The proposed solution to the above problem is a frequency-dependent image rejection enhancement technique based on secondary pole compensation. By adjusting the dominant pole frequency of the high-pass filter (HPF) appropriately, the proposed technique can theoretically completely reject the image interference signal even in the presence of the secondary pole. The proposed APPF is simulated and fabricated in a 180-nm CMOS process. The simulation results show that the proposed technique can improve the IRR of the APPF by more than 30 dB at the operating frequency of hundreds of MHz. The measured IRR is better than -31 dB at the frequency from 95 to 105 MHz. Unlike conventional schemes, the proposed design is from the perspective of frequency correlation, which makes the operating frequency no longer limited by the secondary pole frequency. In addition, the proposed design also has an excellent IRR for quadrature input signals with phase imbalance.
{"title":"A Novel Active Polyphase Filter Employing Frequency-Dependent Image Rejection Enhancement Technique.","authors":"Yue Yin, Haobo Qi, Haodong Lu, Ziting Feng, Jiayu He, Xinbing Zhang, Lei Li, Xiaofei Qi, Xiyuan Feng","doi":"10.3390/mi16010065","DOIUrl":"10.3390/mi16010065","url":null,"abstract":"<p><p>In low intermediate frequency (low-IF) receivers, image interference rejection is one of the core tasks to be accomplished. Conventional active polyphase filters (APPFs) are unable to have a sufficient image rejection ratio (IRR) at high operating frequencies due to the degradation of the IRR by the amplitude and phase imbalances produced by the secondary pole. The proposed solution to the above problem is a frequency-dependent image rejection enhancement technique based on secondary pole compensation. By adjusting the dominant pole frequency of the high-pass filter (HPF) appropriately, the proposed technique can theoretically completely reject the image interference signal even in the presence of the secondary pole. The proposed APPF is simulated and fabricated in a 180-nm CMOS process. The simulation results show that the proposed technique can improve the IRR of the APPF by more than 30 dB at the operating frequency of hundreds of MHz. The measured IRR is better than -31 dB at the frequency from 95 to 105 MHz. Unlike conventional schemes, the proposed design is from the perspective of frequency correlation, which makes the operating frequency no longer limited by the secondary pole frequency. In addition, the proposed design also has an excellent IRR for quadrature input signals with phase imbalance.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 1","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11767483/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143040191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chakali Chandrasekhar, Mohammed Mahaboob Basha, Sari Mohan Das, Oruganti Hemakesavulu, Mohan Dholvan, Javed Syed
In modern ICs, sub-threshold voltage management plays a significant role due to its perspective on energy efficiency and speed performance. Level shifters (LSs) play a critical role in signal exchange among multiple voltage domains by ensuring signal integrity and the reliable operation of ICs. In this article, a Pass-Transistor-Enabled Split Input Voltage Level Shifter (PVLS) is designed for area, delay, and power-efficient applications with a wide voltage conversion range. The represented low-power LS structure is a general blend of both pull-up and pull-down networks that perform level-up or level-down shifts. The proposed PVLS is incorporated with the multi-threshold CMOS technique and a load-balancing driving split inverter to limit high static current, leakage power, and performance degradation. The schematic structure could be able to convert voltages from low to high as well as high to low. The architecture design has the lowest silicon area. The implementation of the proposed design was taken under 55 nm CMOS technology. The represented LS could be able to convert voltage ranges between 0.3 V and 1.3 V, which has a dynamic power of 2.00 nW. The overall propagation delay of the LS is 90 ps and an area of 7.66 µm2 for an input frequency of 1 MHz.
{"title":"Pass-Transistor-Enabled Split Input Voltage Level Shifter for Ultra-Low-Power Applications.","authors":"Chakali Chandrasekhar, Mohammed Mahaboob Basha, Sari Mohan Das, Oruganti Hemakesavulu, Mohan Dholvan, Javed Syed","doi":"10.3390/mi16010064","DOIUrl":"10.3390/mi16010064","url":null,"abstract":"<p><p>In modern ICs, sub-threshold voltage management plays a significant role due to its perspective on energy efficiency and speed performance. Level shifters (LSs) play a critical role in signal exchange among multiple voltage domains by ensuring signal integrity and the reliable operation of ICs. In this article, a Pass-Transistor-Enabled Split Input Voltage Level Shifter (PVLS) is designed for area, delay, and power-efficient applications with a wide voltage conversion range. The represented low-power LS structure is a general blend of both pull-up and pull-down networks that perform level-up or level-down shifts. The proposed PVLS is incorporated with the multi-threshold CMOS technique and a load-balancing driving split inverter to limit high static current, leakage power, and performance degradation. The schematic structure could be able to convert voltages from low to high as well as high to low. The architecture design has the lowest silicon area. The implementation of the proposed design was taken under 55 nm CMOS technology. The represented LS could be able to convert voltage ranges between 0.3 V and 1.3 V, which has a dynamic power of 2.00 nW. The overall propagation delay of the LS is 90 ps and an area of 7.66 µm<sup>2</sup> for an input frequency of 1 MHz.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 1","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11767565/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143039814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study analyzes the impact of slip-dependent zeta potential on the heat transfer characteristics of nanofluids in cylindrical microchannels with consideration of thermal radiation effects. An analytical model is developed, accounting for the coupling between surface potential and interfacial slip. The linearized Poisson-Boltzmann equation, along with the momentum and energy conservation equations, is solved analytically to obtain the electrical potential field, velocity field, temperature distribution, and Nusselt number for both slip-dependent (SD) and slip-independent (SI) zeta potentials. Subsequently, the effects of key parameters, including electric double-layer (EDL) thickness, slip length, nanoparticle volume fraction, thermal radiation parameters, and Brinkman number, on the velocity field, temperature field, and Nusselt number are discussed. The results show that the velocity is consistently higher for the SD zeta potential compared to the SI zeta potential. Meanwhile, the temperature for the SD case is higher than that for the SI case at lower Brinkman numbers, particularly for a thinner EDL. However, an inverse trend is observed at higher Brinkman numbers. Similar trends are observed for the Nusselt number under both SD and SI zeta potential conditions at different Brinkman numbers. Furthermore, for a thinner EDL, the differences in flow velocity, temperature, and Nusselt number between the SD and SI conditions are more pronounced.
{"title":"Analytical Solutions for Electroosmotic Flow and Heat Transfer Characteristics of Nanofluids in Circular Cylindrical Microchannels with Slip-Dependent Zeta Potential Considering Thermal Radiative Effects.","authors":"Zouqing Tan, Xiangcheng Ren","doi":"10.3390/mi16010063","DOIUrl":"10.3390/mi16010063","url":null,"abstract":"<p><p>This study analyzes the impact of slip-dependent zeta potential on the heat transfer characteristics of nanofluids in cylindrical microchannels with consideration of thermal radiation effects. An analytical model is developed, accounting for the coupling between surface potential and interfacial slip. The linearized Poisson-Boltzmann equation, along with the momentum and energy conservation equations, is solved analytically to obtain the electrical potential field, velocity field, temperature distribution, and Nusselt number for both slip-dependent (SD) and slip-independent (SI) zeta potentials. Subsequently, the effects of key parameters, including electric double-layer (EDL) thickness, slip length, nanoparticle volume fraction, thermal radiation parameters, and Brinkman number, on the velocity field, temperature field, and Nusselt number are discussed. The results show that the velocity is consistently higher for the SD zeta potential compared to the SI zeta potential. Meanwhile, the temperature for the SD case is higher than that for the SI case at lower Brinkman numbers, particularly for a thinner EDL. However, an inverse trend is observed at higher Brinkman numbers. Similar trends are observed for the Nusselt number under both SD and SI zeta potential conditions at different Brinkman numbers. Furthermore, for a thinner EDL, the differences in flow velocity, temperature, and Nusselt number between the SD and SI conditions are more pronounced.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 1","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11767716/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143040195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}