Pub Date : 2012-11-01DOI: 10.1109/RFIT.2012.6401674
Fei Jia, Dong Huang, Shengxi Diao, Z. Fu, F. Lin
A class AB power amplifier (PA) with output power digital controllability for WSNs is implemented in 65nm CMOS technology. The programmable output power is realized by altering the number of working cells and adjusting the load through a tunable matching network, which can increase the back-off efficiency significantly. Dummy FETs are used for neutralization to increase reverse isolation. The measurement results show a peak output power of 3dBm and a PAE of 40% with a 1.2V supply. Drain efficiency at back off (above 3dB) increases by more than 10%, comparing to traditional digital controlled PA.
{"title":"A digitally controlled PA with tunable matching network","authors":"Fei Jia, Dong Huang, Shengxi Diao, Z. Fu, F. Lin","doi":"10.1109/RFIT.2012.6401674","DOIUrl":"https://doi.org/10.1109/RFIT.2012.6401674","url":null,"abstract":"A class AB power amplifier (PA) with output power digital controllability for WSNs is implemented in 65nm CMOS technology. The programmable output power is realized by altering the number of working cells and adjusting the load through a tunable matching network, which can increase the back-off efficiency significantly. Dummy FETs are used for neutralization to increase reverse isolation. The measurement results show a peak output power of 3dBm and a PAE of 40% with a 1.2V supply. Drain efficiency at back off (above 3dB) increases by more than 10%, comparing to traditional digital controlled PA.","PeriodicalId":187550,"journal":{"name":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"188 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128704877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-11-01DOI: 10.1109/RFIT.2012.6401661
Haifeng Sun, K. B. Lee, Li Yuan, Weizhu Wang, S. L. Selvaraj, G. Lo
2-D simulation of AlGaN/GaN HEMTs was carried out in order to investigate the mechanism of short-channel effect in highly scaled transistors. We demonstrate the impact of varying the barrier thickness as well as the gate lengths and show that high aspect ratio (gate length to barrier thickness) larger than 10 can effectively mitigate the short channel effect. We also show the influence of InGaN channel and the work-function of Schottky contacts on short channel effects.
{"title":"Theoretical study of short channel effect in highly scaled GaN HEMTs","authors":"Haifeng Sun, K. B. Lee, Li Yuan, Weizhu Wang, S. L. Selvaraj, G. Lo","doi":"10.1109/RFIT.2012.6401661","DOIUrl":"https://doi.org/10.1109/RFIT.2012.6401661","url":null,"abstract":"2-D simulation of AlGaN/GaN HEMTs was carried out in order to investigate the mechanism of short-channel effect in highly scaled transistors. We demonstrate the impact of varying the barrier thickness as well as the gate lengths and show that high aspect ratio (gate length to barrier thickness) larger than 10 can effectively mitigate the short channel effect. We also show the influence of InGaN channel and the work-function of Schottky contacts on short channel effects.","PeriodicalId":187550,"journal":{"name":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131161559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-11-01DOI: 10.1109/RFIT.2012.6401643
Fei Chen, Wei Zhang, W. Rhee, Jongjin Kim, D. Kim, Zhihua Wang
A low-power regenerative FM-UWB receiver with wideband signal reception and linear FM-AM conversion is implemented in 65nm CMOS for short-range communication systems. Different from the conventional regenerative FM-UWB receiver having the narrowband LNA, the proposed receiver employs a wideband LNA and dual bandpass filters (BPFs) to improve FSK demodulation with a relaxed Q requirement of the BPF. A 3.5-4GHz FM-UWB receiver consisting of a stacked LNA, dual BPFs, two envelop detectors and a subtractor successfully performs FM demodulation through wireless transmission from a 100kb/s FM-UWB transmitter, consuming the total power of 3.8mW.
{"title":"A 3.8mW, 3.5–4GHz regenerative FM-UWB receiver with enhanced linearity by utilizing a wideband LNA and dual bandpass filters","authors":"Fei Chen, Wei Zhang, W. Rhee, Jongjin Kim, D. Kim, Zhihua Wang","doi":"10.1109/RFIT.2012.6401643","DOIUrl":"https://doi.org/10.1109/RFIT.2012.6401643","url":null,"abstract":"A low-power regenerative FM-UWB receiver with wideband signal reception and linear FM-AM conversion is implemented in 65nm CMOS for short-range communication systems. Different from the conventional regenerative FM-UWB receiver having the narrowband LNA, the proposed receiver employs a wideband LNA and dual bandpass filters (BPFs) to improve FSK demodulation with a relaxed Q requirement of the BPF. A 3.5-4GHz FM-UWB receiver consisting of a stacked LNA, dual BPFs, two envelop detectors and a subtractor successfully performs FM demodulation through wireless transmission from a 100kb/s FM-UWB transmitter, consuming the total power of 3.8mW.","PeriodicalId":187550,"journal":{"name":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129641580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-11-01DOI: 10.1109/RFIT.2012.6401648
S. Nagai, N. Negoro, T. Fukuda, N. Otsuka, T. Ueda, T. Tanaka, D. Ueda
We have developed new isolated gate drivers using what we call Drive-by-Microwave technology that enables wireless power transmission of input signals. In order to realize the compactness of the gate driver and to obtain isolated gate signals with enough power to directly drive the switching power devices, we have developed a novel compact butterfly-shaped electro-magnetic resonant coupler (EMRC) that operates with RF converted input signals at 5.8GHz. By integrating this EMRC, one-chip GaN isolated gate driver ICs on a sapphire substrate have been developed and their direct driving of the GaN-GIT power switching devices was successfully demonstrated.
{"title":"A one-chip isolated gate driver with Drive-by-Microwave technologies","authors":"S. Nagai, N. Negoro, T. Fukuda, N. Otsuka, T. Ueda, T. Tanaka, D. Ueda","doi":"10.1109/RFIT.2012.6401648","DOIUrl":"https://doi.org/10.1109/RFIT.2012.6401648","url":null,"abstract":"We have developed new isolated gate drivers using what we call Drive-by-Microwave technology that enables wireless power transmission of input signals. In order to realize the compactness of the gate driver and to obtain isolated gate signals with enough power to directly drive the switching power devices, we have developed a novel compact butterfly-shaped electro-magnetic resonant coupler (EMRC) that operates with RF converted input signals at 5.8GHz. By integrating this EMRC, one-chip GaN isolated gate driver ICs on a sapphire substrate have been developed and their direct driving of the GaN-GIT power switching devices was successfully demonstrated.","PeriodicalId":187550,"journal":{"name":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123510544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-11-01DOI: 10.1109/RFIT.2012.6401653
B. Shi, Jijun Yao, M. Chia
Increased commercial use of satellite terminals, broadband wireless communications and high-data link has created a strong demand for Ka-band high power amplifiers (HPAs) coupled with high power efficiency and good linearity performance. To meet the stringent linearity requirement without largely sacrificing output power and efficiency, linearization is the only solution. This paper demonstrates the effectiveness of digital predistortion (DPD) in linearization of Ka-band HPAs by presenting the experimental results from our memory polynomial predistorter based wideband DPD testbed. Tested on an in-house developed 15W Ka-band solid state power amplifier (SSPA), it is shown that with linearization 15-25 dB linearity improvement is achieved for 64-QAM and 8-tone signals. While meeting the required linearity, this will lead to an significant increase on the output power and efficiency, compared to the conventional back-off method.
{"title":"Linearization of Ka-band high power amplifiers","authors":"B. Shi, Jijun Yao, M. Chia","doi":"10.1109/RFIT.2012.6401653","DOIUrl":"https://doi.org/10.1109/RFIT.2012.6401653","url":null,"abstract":"Increased commercial use of satellite terminals, broadband wireless communications and high-data link has created a strong demand for Ka-band high power amplifiers (HPAs) coupled with high power efficiency and good linearity performance. To meet the stringent linearity requirement without largely sacrificing output power and efficiency, linearization is the only solution. This paper demonstrates the effectiveness of digital predistortion (DPD) in linearization of Ka-band HPAs by presenting the experimental results from our memory polynomial predistorter based wideband DPD testbed. Tested on an in-house developed 15W Ka-band solid state power amplifier (SSPA), it is shown that with linearization 15-25 dB linearity improvement is achieved for 64-QAM and 8-tone signals. While meeting the required linearity, this will lead to an significant increase on the output power and efficiency, compared to the conventional back-off method.","PeriodicalId":187550,"journal":{"name":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129242391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-11-01DOI: 10.1109/RFIT.2012.6401636
S. Krishnan, S. Bhuyan, O. Kyaw, V. P. Kumar, Wang Wenjiang
This paper analyzes the effect of proximal metallic objects on the energy transfer efficiency of magnetic resonance coupling based wireless charging systems for electric vehicles. It is observed from both the experiment and simulation that the optimum energy transfer efficiency changes dramatically in the presence of a metallic copper sheet in close proximity to the receiving coil. This effect on the efficiency is also seen to be different for different physical spacing between the transmitting and receiving coils. The results show that the presence of metallic objects in the vicinity of the receiving coil have to be carefully considered for each possible usage scenario in order to maintain good energy transfer efficiencies.
{"title":"Effect of proximal metallic objects on the performance of wireless charging systems for electric vehicles","authors":"S. Krishnan, S. Bhuyan, O. Kyaw, V. P. Kumar, Wang Wenjiang","doi":"10.1109/RFIT.2012.6401636","DOIUrl":"https://doi.org/10.1109/RFIT.2012.6401636","url":null,"abstract":"This paper analyzes the effect of proximal metallic objects on the energy transfer efficiency of magnetic resonance coupling based wireless charging systems for electric vehicles. It is observed from both the experiment and simulation that the optimum energy transfer efficiency changes dramatically in the presence of a metallic copper sheet in close proximity to the receiving coil. This effect on the efficiency is also seen to be different for different physical spacing between the transmitting and receiving coils. The results show that the presence of metallic objects in the vicinity of the receiving coil have to be carefully considered for each possible usage scenario in order to maintain good energy transfer efficiencies.","PeriodicalId":187550,"journal":{"name":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129387482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-11-01DOI: 10.1109/RFIT.2012.6401657
Kaixue Ma, Qiong Zou, Shouxian Mou, N. Mahalingam, K. Yeo
A transformer based multiple coupled LC tanks model for on-chip VCO design is introduced. The merits of adoption multiple coupled LC tanks can be Q factor enhancement for the equivalent LC tank of VCO, low power consumption, better amplitude swing and broad tuning range can be obtained. As an illustration case two low power Ku band VCOs using dual LC-tanks with/without feedback designed using a 0.18 μm BiCMOS process for low phase noise or wide tuning range are demonstrated.
{"title":"Transformer based multiple coupled LC tanks for on-chip VCO design and applications","authors":"Kaixue Ma, Qiong Zou, Shouxian Mou, N. Mahalingam, K. Yeo","doi":"10.1109/RFIT.2012.6401657","DOIUrl":"https://doi.org/10.1109/RFIT.2012.6401657","url":null,"abstract":"A transformer based multiple coupled LC tanks model for on-chip VCO design is introduced. The merits of adoption multiple coupled LC tanks can be Q factor enhancement for the equivalent LC tank of VCO, low power consumption, better amplitude swing and broad tuning range can be obtained. As an illustration case two low power Ku band VCOs using dual LC-tanks with/without feedback designed using a 0.18 μm BiCMOS process for low phase noise or wide tuning range are demonstrated.","PeriodicalId":187550,"journal":{"name":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127722049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this paper, we study the use of ultra-wideband (UWB) system for early breast cancer detection. Images are formed using a number of advanced imaging algorithms, and the effectiveness of the different algorithms are presented and compared. In addition, the use of multiple input multiple output (MIMO) systems are studied and the experiments results are presented.
{"title":"MIMO ultra-wideband system for breast cancer detection","authors":"Leong Wei Deng, Zheng Yuanjin, Lin Zhiping, Diao Shengxi, Gao Yuan","doi":"10.1109/RFIT.2012.6401641","DOIUrl":"https://doi.org/10.1109/RFIT.2012.6401641","url":null,"abstract":"In this paper, we study the use of ultra-wideband (UWB) system for early breast cancer detection. Images are formed using a number of advanced imaging algorithms, and the effectiveness of the different algorithms are presented and compared. In addition, the use of multiple input multiple output (MIMO) systems are studied and the experiments results are presented.","PeriodicalId":187550,"journal":{"name":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121650489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-11-01DOI: 10.1109/RFIT.2012.6401620
Peiyuan Wan, W. Lang, Rui Jin, Chi Zhang, Pingfen Lin
A front-end unity-gain 1-bit flip-around DAC (FADAC) is exploited in a 12-bit opamp-sharing pipelined ADC, allowing a 1.8-Vpp full-swing input at a 1.1-V supply. The high input swing, coupled with a large feedback factor (≈1) of the FADAC, enables a low-voltage low-power design for a high resolution pipelined ADC. The prototype 12-bit ADC operating at 20-MS/s and 1.1-V supply achieves a 66.4 dB SNDR and 76.7 dB SFDR with a 3 MHz input. The ADC consumes 5.2 mW of power and occupies an active area of 0.44 mm2 in 0.13-μm CMOS.
{"title":"A 1.1-V 12-bit 20-MS/s pipelined ADC with 1.8-Vpp full-swing in 0.13-μm CMOS","authors":"Peiyuan Wan, W. Lang, Rui Jin, Chi Zhang, Pingfen Lin","doi":"10.1109/RFIT.2012.6401620","DOIUrl":"https://doi.org/10.1109/RFIT.2012.6401620","url":null,"abstract":"A front-end unity-gain 1-bit flip-around DAC (FADAC) is exploited in a 12-bit opamp-sharing pipelined ADC, allowing a 1.8-Vpp full-swing input at a 1.1-V supply. The high input swing, coupled with a large feedback factor (≈1) of the FADAC, enables a low-voltage low-power design for a high resolution pipelined ADC. The prototype 12-bit ADC operating at 20-MS/s and 1.1-V supply achieves a 66.4 dB SNDR and 76.7 dB SFDR with a 3 MHz input. The ADC consumes 5.2 mW of power and occupies an active area of 0.44 mm2 in 0.13-μm CMOS.","PeriodicalId":187550,"journal":{"name":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125487782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-11-01DOI: 10.1109/RFIT.2012.6401610
A. Hamidian, A. Malignaggi, R. Shu, A. Kamal, G. Boeck
This paper presents the design procedure of a fully integrated 60 GHz double balanced Gilbert cell up-conversion mixer, implemented in 90 nm LP CMOS technology. The mixer is designed for wideband performance to cover the four bands of the IEEE802.15.3c standard. The up-converter achieves a flat conversion gain of -2 dB and an output power of -9 dBm at 1 dB gain compression point for all the four channels with low DC power consumption (17 mW).
{"title":"A wideband Gilbert cell up-converter in 90 nm CMOS for 60 GHz application","authors":"A. Hamidian, A. Malignaggi, R. Shu, A. Kamal, G. Boeck","doi":"10.1109/RFIT.2012.6401610","DOIUrl":"https://doi.org/10.1109/RFIT.2012.6401610","url":null,"abstract":"This paper presents the design procedure of a fully integrated 60 GHz double balanced Gilbert cell up-conversion mixer, implemented in 90 nm LP CMOS technology. The mixer is designed for wideband performance to cover the four bands of the IEEE802.15.3c standard. The up-converter achieves a flat conversion gain of -2 dB and an output power of -9 dBm at 1 dB gain compression point for all the four channels with low DC power consumption (17 mW).","PeriodicalId":187550,"journal":{"name":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124534857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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