Pub Date : 2012-11-01DOI: 10.1109/RFIT.2012.6401609
Y. Shang, Deyun Cai, Wei Fei, Hao Yu, Junyan Ren
An ultra low power direct-conversion receiver is demonstrated for V-band 60GHz applications in 65nm CMOS process. The power consumption is significantly reduced by the design of low-power low noise amplifier (LNA), transconductance mixer and variable gain amplifier (VGA). A compact quadrature-hybrid coupler is developed for transconductance mixer for the reduction of both power and area. The proposed receiver (0.34mm2 chip area) is measured with 8mW power, the minimum single-side-band (SSB) noise figure (NF) of 4.9dB, and the maximum power conversion gain of 55dB.
{"title":"An 8mW ultra low power 60GHz direct-conversion receiver with 55dB gain and 4.9dB noise figure in 65nm CMOS","authors":"Y. Shang, Deyun Cai, Wei Fei, Hao Yu, Junyan Ren","doi":"10.1109/RFIT.2012.6401609","DOIUrl":"https://doi.org/10.1109/RFIT.2012.6401609","url":null,"abstract":"An ultra low power direct-conversion receiver is demonstrated for V-band 60GHz applications in 65nm CMOS process. The power consumption is significantly reduced by the design of low-power low noise amplifier (LNA), transconductance mixer and variable gain amplifier (VGA). A compact quadrature-hybrid coupler is developed for transconductance mixer for the reduction of both power and area. The proposed receiver (0.34mm2 chip area) is measured with 8mW power, the minimum single-side-band (SSB) noise figure (NF) of 4.9dB, and the maximum power conversion gain of 55dB.","PeriodicalId":187550,"journal":{"name":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130661585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-11-01DOI: 10.1109/RFIT.2012.6401623
W. Lang, Peiyuan Wan, Pingfen Lin
This paper presents a low-power chopper stabilized discrete-time 2nd-order feed-forward ΣΔ modulator with a 4-bit asynchronous successive approximation register (SAR) quantizer. The weighted sum of integrated and feed-forward signals is merged with the sampling phase of the SAR quantizer to minimize the distortion sources and associated hardware overhead. The 1st integrator uses a partially switched operational amplifier biased in weak inversion to reduce power consumption. The 4-bit SAR quantizer further employs an asynchronous control scheme to reduce the loop delay and power consumption. A 0.13-μm CMOS experimental prototype achieves 84dB dynamic range, 84dB peak SNR, and 82dB peak SNDR over an input bandwidth of 10-kHz. The total power consumption of the modulator is 48μW from a 0.8-V supply at an 800-kHz sampling rate.
{"title":"A 0.8-V 48μW 82dB SNDR 10-kHz bandwidth ΣΔ modulator","authors":"W. Lang, Peiyuan Wan, Pingfen Lin","doi":"10.1109/RFIT.2012.6401623","DOIUrl":"https://doi.org/10.1109/RFIT.2012.6401623","url":null,"abstract":"This paper presents a low-power chopper stabilized discrete-time 2nd-order feed-forward ΣΔ modulator with a 4-bit asynchronous successive approximation register (SAR) quantizer. The weighted sum of integrated and feed-forward signals is merged with the sampling phase of the SAR quantizer to minimize the distortion sources and associated hardware overhead. The 1st integrator uses a partially switched operational amplifier biased in weak inversion to reduce power consumption. The 4-bit SAR quantizer further employs an asynchronous control scheme to reduce the loop delay and power consumption. A 0.13-μm CMOS experimental prototype achieves 84dB dynamic range, 84dB peak SNR, and 82dB peak SNDR over an input bandwidth of 10-kHz. The total power consumption of the modulator is 48μW from a 0.8-V supply at an 800-kHz sampling rate.","PeriodicalId":187550,"journal":{"name":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"412 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131270209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-11-01DOI: 10.1109/RFIT.2012.6401668
D. Yan, Zhao Bin, M. A. Arasu, Yuan Xiao Jun, M. Kumarasamy Raja, M. Je
This paper presents a fully integrated low cost, low noise 10GHz synthesizer using 65nm RF CMOS process. The synthesizer provide low phase-noise and low reference spur, covering 8.3GHz to 11.3GHz using multiband low gain VCO with auto calibration for locking. The measured phase-noise of 9.75GHz is -77dBc/Hz at lKHz offset, -90.1dBc/Hz at 10KHz offset, -98.6dBc/Hz at 100KHz offset, and -112.5dBc/Hz at 1MHz offset, phase RMS jitter performance is to be less than 1.1° integrated from 1KHz to 1MHz, while maintaining 26MHz reference spur levels lowers -74.6dB cover the entire tuning range. The active die area is 0.55mm × 0.8mm. The chip operates over a wide range of supply voltage from 1.1 V to 1.3V and temperature from -40°C to +85°C respectively. The chip draws 31mA current with buffer from a +1.2V supply at +25°C.
{"title":"A 8.3–11.3GHz low cost integer-N synthesizer with 1.1° RMS phase error in 65nm CMOS","authors":"D. Yan, Zhao Bin, M. A. Arasu, Yuan Xiao Jun, M. Kumarasamy Raja, M. Je","doi":"10.1109/RFIT.2012.6401668","DOIUrl":"https://doi.org/10.1109/RFIT.2012.6401668","url":null,"abstract":"This paper presents a fully integrated low cost, low noise 10GHz synthesizer using 65nm RF CMOS process. The synthesizer provide low phase-noise and low reference spur, covering 8.3GHz to 11.3GHz using multiband low gain VCO with auto calibration for locking. The measured phase-noise of 9.75GHz is -77dBc/Hz at lKHz offset, -90.1dBc/Hz at 10KHz offset, -98.6dBc/Hz at 100KHz offset, and -112.5dBc/Hz at 1MHz offset, phase RMS jitter performance is to be less than 1.1° integrated from 1KHz to 1MHz, while maintaining 26MHz reference spur levels lowers -74.6dB cover the entire tuning range. The active die area is 0.55mm × 0.8mm. The chip operates over a wide range of supply voltage from 1.1 V to 1.3V and temperature from -40°C to +85°C respectively. The chip draws 31mA current with buffer from a +1.2V supply at +25°C.","PeriodicalId":187550,"journal":{"name":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133672486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-11-01DOI: 10.1109/RFIT.2012.6401650
H. T. Duong, H. V. Le, A. Huynh, B. Yang, F. Zhang, R. Evans, E. Skafidas
A single side band(SSB) 77 GHz transmitter for radar automotive applications is presented in this paper. The direct conversion transmitter consists of a SSB sub-harmonic up-convertion mixer and a 4-stage power amplifier(PA). The 38 GHz passive coupler and balun are designed to provide IQ differential LO from external input to drive the mixer. The proposed transmitter is fabricated in 65-nm CMOS. The measured transmitter has 1-dB output compression point of -2 dBm and a saturation output power of 0 dBm at 77 GHz. The leakage from LO to RF output is less than -33 dBm and the output matching is better than -18 dB from 65 to 80 GHz. The proposed transmitter power consumption is 130 mW and the silicon die-size is 1.0 × 2.7 mm2.
{"title":"A 77 GHz automotive radar transmitter in 65-nm CMOS","authors":"H. T. Duong, H. V. Le, A. Huynh, B. Yang, F. Zhang, R. Evans, E. Skafidas","doi":"10.1109/RFIT.2012.6401650","DOIUrl":"https://doi.org/10.1109/RFIT.2012.6401650","url":null,"abstract":"A single side band(SSB) 77 GHz transmitter for radar automotive applications is presented in this paper. The direct conversion transmitter consists of a SSB sub-harmonic up-convertion mixer and a 4-stage power amplifier(PA). The 38 GHz passive coupler and balun are designed to provide IQ differential LO from external input to drive the mixer. The proposed transmitter is fabricated in 65-nm CMOS. The measured transmitter has 1-dB output compression point of -2 dBm and a saturation output power of 0 dBm at 77 GHz. The leakage from LO to RF output is less than -33 dBm and the output matching is better than -18 dB from 65 to 80 GHz. The proposed transmitter power consumption is 130 mW and the silicon die-size is 1.0 × 2.7 mm2.","PeriodicalId":187550,"journal":{"name":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"268 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114335736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-11-01DOI: 10.1109/RFIT.2012.6401655
Kean Boon Lee, Haifeng Sun, Li Yuan, Weizhu Wang, S. L. Selvaraj, G. Lo
The effect of dual-metal gate (DMG) on AlGaN/GaN high electron mobility transistors (HEMTs) has been investigated. An additional peak in the electric field is present in the interface between two metals in DMG device and leads to an enhancement in average drift velocity under the gate. Improvement in both output current and transconductance is observed in the device with DMG compared to its single-metal gate counterpart. Moreover, drain induced barrier lowering effect is suppressed as the device scales down to sub-micrometer due to the presence of screening effect in the channel potential in the DMG HEMTs.
{"title":"Dual-metal gate AlGaN/GaN high electron mobility transistors: A theoretical study","authors":"Kean Boon Lee, Haifeng Sun, Li Yuan, Weizhu Wang, S. L. Selvaraj, G. Lo","doi":"10.1109/RFIT.2012.6401655","DOIUrl":"https://doi.org/10.1109/RFIT.2012.6401655","url":null,"abstract":"The effect of dual-metal gate (DMG) on AlGaN/GaN high electron mobility transistors (HEMTs) has been investigated. An additional peak in the electric field is present in the interface between two metals in DMG device and leads to an enhancement in average drift velocity under the gate. Improvement in both output current and transconductance is observed in the device with DMG compared to its single-metal gate counterpart. Moreover, drain induced barrier lowering effect is suppressed as the device scales down to sub-micrometer due to the presence of screening effect in the channel potential in the DMG HEMTs.","PeriodicalId":187550,"journal":{"name":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"31 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123211012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-11-01DOI: 10.1109/RFIT.2012.6401658
C. Bryant, J. Lindstrand, H. Sjoland, M. Tormanen
A CMOS LO-Generator operating at 70GHz and 210GHz by the use of a frequency tripling technique is presented. A cross-coupled NMOS VCO is used together with a single-balanced mixer to achieve low phase-noise. The chip measures a single-ended output power of -15dBm in the 70GHz band, with 6.54% tuning range, from a 1.2V supply while consuming 7.2mW. A phase-noise of -113.2dBc/Hz is measured at 10MHz frequency offset from a carrier frequency of 73.8GHz. This yields a phase noise figure of merit, FOM, of 181.8dB, and with the tuning range taken into account, a FOMT of 178dB. By using this technique neither FOM nor FOMT are degraded in the 210GHz band since both power consumption and tuning range are maintained.
{"title":"A 70 and 210 GHz LO generator in 65nm CMOS","authors":"C. Bryant, J. Lindstrand, H. Sjoland, M. Tormanen","doi":"10.1109/RFIT.2012.6401658","DOIUrl":"https://doi.org/10.1109/RFIT.2012.6401658","url":null,"abstract":"A CMOS LO-Generator operating at 70GHz and 210GHz by the use of a frequency tripling technique is presented. A cross-coupled NMOS VCO is used together with a single-balanced mixer to achieve low phase-noise. The chip measures a single-ended output power of -15dBm in the 70GHz band, with 6.54% tuning range, from a 1.2V supply while consuming 7.2mW. A phase-noise of -113.2dBc/Hz is measured at 10MHz frequency offset from a carrier frequency of 73.8GHz. This yields a phase noise figure of merit, FOM, of 181.8dB, and with the tuning range taken into account, a FOMT of 178dB. By using this technique neither FOM nor FOMT are degraded in the 210GHz band since both power consumption and tuning range are maintained.","PeriodicalId":187550,"journal":{"name":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"31 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130439726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-11-01DOI: 10.1109/RFIT.2012.6401664
A. Munir, A. Prasetiadi, M. R. Effendi
The information of foliage relative permittivity is one of important properties in the design of microwave communications or radar systems, especially in forest area. In this paper, the measurement of foliage relative permittivity is proposed based on the cavity reflection-transmission-perturbation method. The technique that uses a rectangular waveguide combines the reflection/transmission method that can keep the foliage undestroyed and the cavity perturbation method that has high accuracy. Prior to the foliage relative permittivity measurement, the proposed method is numerically analyzed based on rectangular waveguide and then experimentally verified for some known dielectric materials. From the measurement of some foliage samples in Indonesia, the relative permittivity of foliage shows the different result that depends on the moisture content in each foliage sample. It shows that the proposed method is easier and more suitable as the foliage can be kept undestroyed for the measurement.
{"title":"Cavity reflection-transmission-perturbation method for foliage relative permittivity measurement","authors":"A. Munir, A. Prasetiadi, M. R. Effendi","doi":"10.1109/RFIT.2012.6401664","DOIUrl":"https://doi.org/10.1109/RFIT.2012.6401664","url":null,"abstract":"The information of foliage relative permittivity is one of important properties in the design of microwave communications or radar systems, especially in forest area. In this paper, the measurement of foliage relative permittivity is proposed based on the cavity reflection-transmission-perturbation method. The technique that uses a rectangular waveguide combines the reflection/transmission method that can keep the foliage undestroyed and the cavity perturbation method that has high accuracy. Prior to the foliage relative permittivity measurement, the proposed method is numerically analyzed based on rectangular waveguide and then experimentally verified for some known dielectric materials. From the measurement of some foliage samples in Indonesia, the relative permittivity of foliage shows the different result that depends on the moisture content in each foliage sample. It shows that the proposed method is easier and more suitable as the foliage can be kept undestroyed for the measurement.","PeriodicalId":187550,"journal":{"name":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126255951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-11-01DOI: 10.1109/RFIT.2012.6401622
Hon Cheong Hor, L. Siek
The continuous scaling in CMOS technology has driven researchers to look for new ADC architecture that can work well in lower supply voltage and smaller device dimension. VCO-based ADCs have emerged as an attractive solution due to its highly digital intensive circuit architecture, inherent noise shaping characteristic, as well as anti-aliasing property. However, the nonlinear behavior of VCO's voltage-to-frequency characteristic has severe limitation on the performance of VCO-based ADC. This paper presents recent development in VCO-based ADC with different VCO nonlinearity suppression techniques. The advantage and disadvantage of each of these techniques will be reviewed.
{"title":"Review on VCO based ADC in modern deep submicron CMOS technology","authors":"Hon Cheong Hor, L. Siek","doi":"10.1109/RFIT.2012.6401622","DOIUrl":"https://doi.org/10.1109/RFIT.2012.6401622","url":null,"abstract":"The continuous scaling in CMOS technology has driven researchers to look for new ADC architecture that can work well in lower supply voltage and smaller device dimension. VCO-based ADCs have emerged as an attractive solution due to its highly digital intensive circuit architecture, inherent noise shaping characteristic, as well as anti-aliasing property. However, the nonlinear behavior of VCO's voltage-to-frequency characteristic has severe limitation on the performance of VCO-based ADC. This paper presents recent development in VCO-based ADC with different VCO nonlinearity suppression techniques. The advantage and disadvantage of each of these techniques will be reviewed.","PeriodicalId":187550,"journal":{"name":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127543383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-11-01DOI: 10.1109/RFIT.2012.6401625
T. Vaha-Heikkila, M. Lahti
This paper introduces Low Temperature Co-Fired Ceramics (LTCC) technology platform which is an integration platform for multi chip modules. LTCC platform is also well suited for the realization of antenna arrays, filters and other passives from RF to millimeter wave frequencies. Examples of realized components and modules are presented in the paper.
{"title":"LTCC 3D integration platform for microwave and millimeter wave modules","authors":"T. Vaha-Heikkila, M. Lahti","doi":"10.1109/RFIT.2012.6401625","DOIUrl":"https://doi.org/10.1109/RFIT.2012.6401625","url":null,"abstract":"This paper introduces Low Temperature Co-Fired Ceramics (LTCC) technology platform which is an integration platform for multi chip modules. LTCC platform is also well suited for the realization of antenna arrays, filters and other passives from RF to millimeter wave frequencies. Examples of realized components and modules are presented in the paper.","PeriodicalId":187550,"journal":{"name":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125897175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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