Pub Date : 2009-03-27DOI: 10.1109/MEMSYS.2009.4805423
Marcel Dijkstra, T. Lammerink, M. D. de Boer, R. Wiegerink, M. Elwenspoek
A highly-sensitive thermal flow sensor for liquid flow with nl-min-1 resolution has been realised. The sensor consists of freely-suspended silicon-rich silicon-nitride microchannels with integrated Al heater resistors and Al/poly-Si++ thermopiles. The influence of drift in the thin-film metal resistors is effectively eliminated by using thermopiles combined with an adequate measurement method, where the power in the heater resistors is controlled, e.g. constant-power calorimetric method or temperature balancing method. The special meandering layout of the microchannels and the placement of thermopile junctions increases sensitivity by summing the thermopile voltages due to convection by fluid flow, whereas the influence of ambient temperature gradients is compensated for.
{"title":"Ambient Temperature-Gradient Compensated Low-Drift Thermopile Flow Sensor","authors":"Marcel Dijkstra, T. Lammerink, M. D. de Boer, R. Wiegerink, M. Elwenspoek","doi":"10.1109/MEMSYS.2009.4805423","DOIUrl":"https://doi.org/10.1109/MEMSYS.2009.4805423","url":null,"abstract":"A highly-sensitive thermal flow sensor for liquid flow with nl-min-1 resolution has been realised. The sensor consists of freely-suspended silicon-rich silicon-nitride microchannels with integrated Al heater resistors and Al/poly-Si++ thermopiles. The influence of drift in the thin-film metal resistors is effectively eliminated by using thermopiles combined with an adequate measurement method, where the power in the heater resistors is controlled, e.g. constant-power calorimetric method or temperature balancing method. The special meandering layout of the microchannels and the placement of thermopile junctions increases sensitivity by summing the thermopile voltages due to convection by fluid flow, whereas the influence of ambient temperature gradients is compensated for.","PeriodicalId":187850,"journal":{"name":"2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121200862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-03-27DOI: 10.1109/MEMSYS.2009.4805571
Donato Clausi, H. Gradin, S. Braun, J. Peirs, G. Stemme, D. Reynaerts, Wouter van der Wijngaart
This paper reports on the wafer-scale integration of pre-strained SMA wires to microstructured silicon devices and the performance of the microactuator prototypes. The overall goal is to obtain low cost microactuators having high work densities and a mass production compatible manufacturing, without having to deal with the inherently high costs of a pick-and-place approach or with the complex composition control and annealing process of sputtered NiTi films. Testing above the SMA transformation temperature shows repeatability in actuation of the fabricated structures, with net strokes of 170 ¿m for the double cantilever actuators.
{"title":"Microactuation Utilizing Wafer-Level Integrated SMA Wires","authors":"Donato Clausi, H. Gradin, S. Braun, J. Peirs, G. Stemme, D. Reynaerts, Wouter van der Wijngaart","doi":"10.1109/MEMSYS.2009.4805571","DOIUrl":"https://doi.org/10.1109/MEMSYS.2009.4805571","url":null,"abstract":"This paper reports on the wafer-scale integration of pre-strained SMA wires to microstructured silicon devices and the performance of the microactuator prototypes. The overall goal is to obtain low cost microactuators having high work densities and a mass production compatible manufacturing, without having to deal with the inherently high costs of a pick-and-place approach or with the complex composition control and annealing process of sputtered NiTi films. Testing above the SMA transformation temperature shows repeatability in actuation of the fabricated structures, with net strokes of 170 ¿m for the double cantilever actuators.","PeriodicalId":187850,"journal":{"name":"2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128103629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-03-27DOI: 10.1109/MEMSYS.2009.4805347
E. Iwase, H. Onoe, A. Nakai, Kiyoshi Matsumoto, I. Shimoyama
We propose an integration method for arranging LED bare chips on a flexible substrate to fabricate a multi-color LED display. LED chips (240 ¿m × 240 ¿m × 75 ¿m) which were arrayed on an adhesive sheet were transferred to a flexible circuit substrate using our temparature-controlled transfer (TCT) and self-wiring (SW) method. Using these methods, we demonstrated a 5-by-5 LED flexible device and a two-color (blue and green) LED device, and observed light emission from the LED chips.
{"title":"Temperature-Controlled Transfer and Self-Wiring for Multi-Color Led Display on a Flexible Substrate","authors":"E. Iwase, H. Onoe, A. Nakai, Kiyoshi Matsumoto, I. Shimoyama","doi":"10.1109/MEMSYS.2009.4805347","DOIUrl":"https://doi.org/10.1109/MEMSYS.2009.4805347","url":null,"abstract":"We propose an integration method for arranging LED bare chips on a flexible substrate to fabricate a multi-color LED display. LED chips (240 ¿m × 240 ¿m × 75 ¿m) which were arrayed on an adhesive sheet were transferred to a flexible circuit substrate using our temparature-controlled transfer (TCT) and self-wiring (SW) method. Using these methods, we demonstrated a 5-by-5 LED flexible device and a two-color (blue and green) LED device, and observed light emission from the LED chips.","PeriodicalId":187850,"journal":{"name":"2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121951703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-03-27DOI: 10.1109/MEMSYS.2009.4805559
T. Chen, Z. Liu, J. Korvink, S. Krausse, U. Wallrabe
We present a new design procedure for a functional MEMS design and, simultaneously, for safe manufacturing. In order to verify our approach we chose a 2.5 D compliant rotational mirror as an example, which is fabricated in single crystal silicon. The design of this compliant mechanism is based on structural topology optimization [1] with subsequent modification by parameter optimization with a pseudo-rigid-body mode analysis [2]. The fabricated compliant mechanism has a linear input at the load point, which is pushed by a piezoelectric actuator, and a rotational output at the mirror section. This single crystal silicon mechanism achieves a rotational angle of 5° with a stationary rotational center at low frequency up to 50 Hz.
{"title":"Topology Optimization for Micro Rotational Mirror Design and Safe Manufacturing","authors":"T. Chen, Z. Liu, J. Korvink, S. Krausse, U. Wallrabe","doi":"10.1109/MEMSYS.2009.4805559","DOIUrl":"https://doi.org/10.1109/MEMSYS.2009.4805559","url":null,"abstract":"We present a new design procedure for a functional MEMS design and, simultaneously, for safe manufacturing. In order to verify our approach we chose a 2.5 D compliant rotational mirror as an example, which is fabricated in single crystal silicon. The design of this compliant mechanism is based on structural topology optimization [1] with subsequent modification by parameter optimization with a pseudo-rigid-body mode analysis [2]. The fabricated compliant mechanism has a linear input at the load point, which is pushed by a piezoelectric actuator, and a rotational output at the mirror section. This single crystal silicon mechanism achieves a rotational angle of 5° with a stationary rotational center at low frequency up to 50 Hz.","PeriodicalId":187850,"journal":{"name":"2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132296558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-03-27DOI: 10.1109/MEMSYS.2009.4805429
H. Takao, N. Tanaka, M. Sugiura, K. Sawada, M. Ishida
This paper reports `non-linear' micro fluidic integrated circuit technology using newly developed vertical microvalve, Pneumatic-Field Effect Transistor (Pneumatic-FET) with controllability of its output resistance. In addition to the basic linear amplifiers of pressures obtained by positive output resistance of pneumatic-FET, the negative output resistance is attractive to realize non-linear functions in the smallest number of FETs. In this study, we have succeeded to fabricate `non-linear' fluidic circuits with hysteresis or kinked transfer function utilizing negative output resistance of vertical pneumatic-FET for the first time. The novel device structure and the simple fabrication technology for controllable output resistance, and characteristics of the pneumatic integrated circuits are demonstrated.
{"title":"Non-Linear Fluidic Integrated Circuits Realized by Pneumatic-Field Effect Transistors with Controllable Output Resistance","authors":"H. Takao, N. Tanaka, M. Sugiura, K. Sawada, M. Ishida","doi":"10.1109/MEMSYS.2009.4805429","DOIUrl":"https://doi.org/10.1109/MEMSYS.2009.4805429","url":null,"abstract":"This paper reports `non-linear' micro fluidic integrated circuit technology using newly developed vertical microvalve, Pneumatic-Field Effect Transistor (Pneumatic-FET) with controllability of its output resistance. In addition to the basic linear amplifiers of pressures obtained by positive output resistance of pneumatic-FET, the negative output resistance is attractive to realize non-linear functions in the smallest number of FETs. In this study, we have succeeded to fabricate `non-linear' fluidic circuits with hysteresis or kinked transfer function utilizing negative output resistance of vertical pneumatic-FET for the first time. The novel device structure and the simple fabrication technology for controllable output resistance, and characteristics of the pneumatic integrated circuits are demonstrated.","PeriodicalId":187850,"journal":{"name":"2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130860641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-03-27DOI: 10.1109/MEMSYS.2009.4805567
Han-Tang Su, Tsung-Lin Tang, W. Fang
This study has successfully designed and implemented a novel magnetic actuator. There are three merits of this magnetic actuator: (1) apply magnetic actuation force by magnetizing soft magnetic material, (2) both attractive and repulsive magnetic forces are available by changing the direction of magnetic field, and (3) the present magnetic actuator can be easily operated underwater. In applications, the test structure successfully demonstrates the repulsive force act as magnetic bearing to prevent contact of micro structures. The magnetization actuation mechanism which is suitable for underwater application is also demonstrated by micro gripper.
{"title":"A Novel Underwater Actuator Driven by Magnetization Repulsion/Attraction","authors":"Han-Tang Su, Tsung-Lin Tang, W. Fang","doi":"10.1109/MEMSYS.2009.4805567","DOIUrl":"https://doi.org/10.1109/MEMSYS.2009.4805567","url":null,"abstract":"This study has successfully designed and implemented a novel magnetic actuator. There are three merits of this magnetic actuator: (1) apply magnetic actuation force by magnetizing soft magnetic material, (2) both attractive and repulsive magnetic forces are available by changing the direction of magnetic field, and (3) the present magnetic actuator can be easily operated underwater. In applications, the test structure successfully demonstrates the repulsive force act as magnetic bearing to prevent contact of micro structures. The magnetization actuation mechanism which is suitable for underwater application is also demonstrated by micro gripper.","PeriodicalId":187850,"journal":{"name":"2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127810260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-03-27DOI: 10.1109/MEMSYS.2009.4805400
Yong-Ho Kim, S. Kwon, Dongho Park, Jungho Hwang, Yong-Jun Kim
This paper demonstrates a hybrid particle classification and condensation device based on both aerodynamics and electrostatics using a micro virtual impactor (¿VI). The ¿VI is capable of classifying the nanoparticles according to their size and condense their number concentration that we are interested. The ¿VI was fabricated using polymer micromachining. Its classification efficiency was examined using solid particles, polystyrene latex (PSL) ranging from 80 to 250 nm in diameter. Thereafter, specific-sized nanoparticles, NaCl of 50 nm in diameter, were condensed by applying an electric potential of 1.1 kV. As a result, the electric signal detected was amplified by 4 times higher than that when no electric potential was applied. The output signal was amplified by 4 times (before condensation: 4 fA, after condensation: 16 fA).
{"title":"Classification and Condensation of Nano-Sized Airborne Particles by Electrically Tunning Collection Size","authors":"Yong-Ho Kim, S. Kwon, Dongho Park, Jungho Hwang, Yong-Jun Kim","doi":"10.1109/MEMSYS.2009.4805400","DOIUrl":"https://doi.org/10.1109/MEMSYS.2009.4805400","url":null,"abstract":"This paper demonstrates a hybrid particle classification and condensation device based on both aerodynamics and electrostatics using a micro virtual impactor (¿VI). The ¿VI is capable of classifying the nanoparticles according to their size and condense their number concentration that we are interested. The ¿VI was fabricated using polymer micromachining. Its classification efficiency was examined using solid particles, polystyrene latex (PSL) ranging from 80 to 250 nm in diameter. Thereafter, specific-sized nanoparticles, NaCl of 50 nm in diameter, were condensed by applying an electric potential of 1.1 kV. As a result, the electric signal detected was amplified by 4 times higher than that when no electric potential was applied. The output signal was amplified by 4 times (before condensation: 4 fA, after condensation: 16 fA).","PeriodicalId":187850,"journal":{"name":"2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems","volume":"200 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115721142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-03-27DOI: 10.1109/MEMSYS.2009.4805336
D. Acquaviva, D. Tsamados, P. Coronel, T. Skotnicki, A. Ionescu
In this paper we propose and experimentally validate the concept of Microelectromechanical Metal-Air-Insulator-Semiconductor Diode (MEM-MAIS) as a novel hybrid device for ESD protection fabricated on SOI. The proposed ESD switch has unique figures of merit inherited from the MEM part: the in-series air gap guaranties record low leakage current (~10fA/¿m) practically independent on temperature up to 100°C in off-state and a parasitic capacitance of few fF. The scalable electro-mechanical design of the actuation voltage makes the new proposed switch suitable for voltage domains ranging from few volts to tens of volts. A Fowler-Nordheim conduction is demonstrated for the on-state of the MEM-MAIS diode. Basic ESD HBM and MM experiments with MEM-MAIS diodes are reported and the versatility of the new device demonstrated.
{"title":"Microelectromechanical Metal-Air-Insulator-Semiconductor (MEM-MAIS) Diode: A Novel Hybrid Device for ESD Protection","authors":"D. Acquaviva, D. Tsamados, P. Coronel, T. Skotnicki, A. Ionescu","doi":"10.1109/MEMSYS.2009.4805336","DOIUrl":"https://doi.org/10.1109/MEMSYS.2009.4805336","url":null,"abstract":"In this paper we propose and experimentally validate the concept of Microelectromechanical Metal-Air-Insulator-Semiconductor Diode (MEM-MAIS) as a novel hybrid device for ESD protection fabricated on SOI. The proposed ESD switch has unique figures of merit inherited from the MEM part: the in-series air gap guaranties record low leakage current (~10fA/¿m) practically independent on temperature up to 100°C in off-state and a parasitic capacitance of few fF. The scalable electro-mechanical design of the actuation voltage makes the new proposed switch suitable for voltage domains ranging from few volts to tens of volts. A Fowler-Nordheim conduction is demonstrated for the on-state of the MEM-MAIS diode. Basic ESD HBM and MM experiments with MEM-MAIS diodes are reported and the versatility of the new device demonstrated.","PeriodicalId":187850,"journal":{"name":"2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115765821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-03-27DOI: 10.1109/MEMSYS.2009.4805392
J. Garcia-Cordero, I. Dimov, Justin O'Grady, J. Ducrée, T. Barry, A. Ricco
We report the design, fabrication, and characterization of a polymer centrifugal microfluidic system for the specific detection of bacterial pathogens. This single-cartridge platform integrates bacteria capture and concentration, supernatant solution removal, lysis, and nucleic-acid sequence-based amplification (NASBA) in a single unit. The unit is fabricated using multilayer lamination and consists of five different polymer layers. Bacteria capture and concentration are accomplished by sedimentation in five minutes. Centrifugation forces also drive the subsequent steps. A wax valve is integrated in the cartridge to enable high-speed centrifugation. Oil is used to prevent evaporation during reactions requiring thermal cycling. Device functionality was demonstrated by real-time detection of E. coli from a 200-¿L sample.
{"title":"Monolithic Centrifugal Microfluidic Platform for Bacteria Capture and Concentration, Lysis, Nucleic-Acid Amplification, and Real-Time Detection","authors":"J. Garcia-Cordero, I. Dimov, Justin O'Grady, J. Ducrée, T. Barry, A. Ricco","doi":"10.1109/MEMSYS.2009.4805392","DOIUrl":"https://doi.org/10.1109/MEMSYS.2009.4805392","url":null,"abstract":"We report the design, fabrication, and characterization of a polymer centrifugal microfluidic system for the specific detection of bacterial pathogens. This single-cartridge platform integrates bacteria capture and concentration, supernatant solution removal, lysis, and nucleic-acid sequence-based amplification (NASBA) in a single unit. The unit is fabricated using multilayer lamination and consists of five different polymer layers. Bacteria capture and concentration are accomplished by sedimentation in five minutes. Centrifugation forces also drive the subsequent steps. A wax valve is integrated in the cartridge to enable high-speed centrifugation. Oil is used to prevent evaporation during reactions requiring thermal cycling. Device functionality was demonstrated by real-time detection of E. coli from a 200-¿L sample.","PeriodicalId":187850,"journal":{"name":"2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124579105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-03-27DOI: 10.1109/MEMSYS.2009.4805307
N. Somjit, G. Stemme, J. Oberhammer
A novel concept of ultra-broadband multi-stage digital-type microwave MEMS phase shifters with the best performance optimized for W-band applications is introduced in this paper. The relative phase shift of 45° of a single stage is achieved by vertically moving a ¿2-long high-resistivity silicon dielectric block above a 3D micromachined coplanar waveguide (3D CPW) by electrostatic actuation, resulting in different propagation constants of the microwave signal for the up-state and the down-state. For full 360° phase-shift capability, seven stages are cascaded. The devices are fabricated and assembled by wafer-scale processes using bulk and surface micromachining. The measurement results of the first prototypes show that the W-band return and insertion loss of a single 45° stage is better than -15 dB and -1.7 dB, respectively, while the 7-stage phase shifter has a return loss better than -12 dB with an insertion loss less than -4 dB. The phase shifters also perform well from 1-110 GHz with the return loss better than -10 dB, an insertion loss of less than -1.5 dB and a fairly linear phase-shift over the whole frequency range and the actuation voltage is 30 V. To the knowledge of the authors this phase shifter is better than all previous works in term of insertion loss, return loss and phase shift per losses (°/dB) from 70-100 GHz.
{"title":"Novel Concept of Microwave MEMS Reconfigurable 7X45° Multi-Stage Dielectric-Block Phase Shifter","authors":"N. Somjit, G. Stemme, J. Oberhammer","doi":"10.1109/MEMSYS.2009.4805307","DOIUrl":"https://doi.org/10.1109/MEMSYS.2009.4805307","url":null,"abstract":"A novel concept of ultra-broadband multi-stage digital-type microwave MEMS phase shifters with the best performance optimized for W-band applications is introduced in this paper. The relative phase shift of 45° of a single stage is achieved by vertically moving a ¿2-long high-resistivity silicon dielectric block above a 3D micromachined coplanar waveguide (3D CPW) by electrostatic actuation, resulting in different propagation constants of the microwave signal for the up-state and the down-state. For full 360° phase-shift capability, seven stages are cascaded. The devices are fabricated and assembled by wafer-scale processes using bulk and surface micromachining. The measurement results of the first prototypes show that the W-band return and insertion loss of a single 45° stage is better than -15 dB and -1.7 dB, respectively, while the 7-stage phase shifter has a return loss better than -12 dB with an insertion loss less than -4 dB. The phase shifters also perform well from 1-110 GHz with the return loss better than -10 dB, an insertion loss of less than -1.5 dB and a fairly linear phase-shift over the whole frequency range and the actuation voltage is 30 V. To the knowledge of the authors this phase shifter is better than all previous works in term of insertion loss, return loss and phase shift per losses (°/dB) from 70-100 GHz.","PeriodicalId":187850,"journal":{"name":"2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114356774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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