Pub Date : 2024-07-03DOI: 10.1038/s41565-024-01706-1
Heonsu Ahn, Gunho Moon, Hang-gyo Jung, Bingchen Deng, Dong-Hwan Yang, Sera Yang, Cheolhee Han, Hyunje Cho, Youngki Yeo, Cheol-Joo Kim, Chan-Ho Yang, Jonghwan Kim, Si-Young Choi, Hongkun Park, Jongwook Jeon, Jin-Hong Park, Moon-Ho Jo
In atomically thin van der Waals materials, grain boundaries—the line defects between adjacent crystal grains with tilted in-plane rotations—are omnipresent. When the tilting angles are arbitrary, the grain boundaries form inhomogeneous sublattices, giving rise to local electronic states that are not controlled. Here we report on epitaxial realizations of deterministic MoS2 mirror twin boundaries (MTBs) at which two adjoining crystals are reflection mirroring by an exactly 60° rotation by position-controlled epitaxy. We showed that these epitaxial MTBs are one-dimensionally metallic to a circuit length scale. By utilizing the ultimate one-dimensional (1D) feature (width ~0.4 nm and length up to a few tens of micrometres), we incorporated the epitaxial MTBs as a 1D gate to build integrated two-dimensional field-effect transistors (FETs). The critical role of the 1D MTB gate was verified to scale the depletion channel length down to 3.9 nm, resulting in a substantially lowered channel off-current at lower gate voltages. With that, in both individual and array FETs, we demonstrated state-of-the-art performances for low-power logics. The 1D epitaxial MTB gates in this work suggest a novel synthetic pathway for the integration of two-dimensional FETs—that are immune to high gate capacitance—towards ultimate scaling. Mirror twin boundaries in monolayer MoS2—line defects with reflection-mirroring symmetry—are one-dimensionally metallic. In this work, the authors fabricate these mirror twin boundary networks by epitaxity and incorporate them into ultrascaled 2D transistor circuits as gate electrodes.
{"title":"Integrated 1D epitaxial mirror twin boundaries for ultrascaled 2D MoS2 field-effect transistors","authors":"Heonsu Ahn, Gunho Moon, Hang-gyo Jung, Bingchen Deng, Dong-Hwan Yang, Sera Yang, Cheolhee Han, Hyunje Cho, Youngki Yeo, Cheol-Joo Kim, Chan-Ho Yang, Jonghwan Kim, Si-Young Choi, Hongkun Park, Jongwook Jeon, Jin-Hong Park, Moon-Ho Jo","doi":"10.1038/s41565-024-01706-1","DOIUrl":"10.1038/s41565-024-01706-1","url":null,"abstract":"In atomically thin van der Waals materials, grain boundaries—the line defects between adjacent crystal grains with tilted in-plane rotations—are omnipresent. When the tilting angles are arbitrary, the grain boundaries form inhomogeneous sublattices, giving rise to local electronic states that are not controlled. Here we report on epitaxial realizations of deterministic MoS2 mirror twin boundaries (MTBs) at which two adjoining crystals are reflection mirroring by an exactly 60° rotation by position-controlled epitaxy. We showed that these epitaxial MTBs are one-dimensionally metallic to a circuit length scale. By utilizing the ultimate one-dimensional (1D) feature (width ~0.4 nm and length up to a few tens of micrometres), we incorporated the epitaxial MTBs as a 1D gate to build integrated two-dimensional field-effect transistors (FETs). The critical role of the 1D MTB gate was verified to scale the depletion channel length down to 3.9 nm, resulting in a substantially lowered channel off-current at lower gate voltages. With that, in both individual and array FETs, we demonstrated state-of-the-art performances for low-power logics. The 1D epitaxial MTB gates in this work suggest a novel synthetic pathway for the integration of two-dimensional FETs—that are immune to high gate capacitance—towards ultimate scaling. Mirror twin boundaries in monolayer MoS2—line defects with reflection-mirroring symmetry—are one-dimensionally metallic. In this work, the authors fabricate these mirror twin boundary networks by epitaxity and incorporate them into ultrascaled 2D transistor circuits as gate electrodes.","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":null,"pages":null},"PeriodicalIF":38.1,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141496023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics and spintronics. However, achieving high performance and versatility at low temperatures remains elusive. Here we demonstrate a large and electrically tunable Nernst effect by combining the electrical properties of graphene with the semiconducting characteristics of indium selenide in a field-effect geometry. Our results establish a new platform for exploring and manipulating this thermoelectric effect, showcasing the first electrical tunability with an on/off ratio of 103. Moreover, photovoltage measurements reveal a stronger photo-Nernst signal in the graphene/indium selenide heterostructure compared with individual components. Remarkably, we observe a record-high Nernst coefficient of 66.4 μV K−1 T−1 at ultralow temperatures and low magnetic fields, an important step towards applications in quantum information and low-temperature emergent phenomena. A highly tunable Nernst effect has been demonstrated in graphene/indium selenide devices, achieving a record Nernst coefficient at ultralow temperatures, highlighting its potential for quantum technologies and low-temperature applications.
{"title":"Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures","authors":"Gabriele Pasquale, Zhe Sun, Guilherme Migliato Marega, Kenji Watanabe, Takashi Taniguchi, Andras Kis","doi":"10.1038/s41565-024-01717-y","DOIUrl":"10.1038/s41565-024-01717-y","url":null,"abstract":"The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics and spintronics. However, achieving high performance and versatility at low temperatures remains elusive. Here we demonstrate a large and electrically tunable Nernst effect by combining the electrical properties of graphene with the semiconducting characteristics of indium selenide in a field-effect geometry. Our results establish a new platform for exploring and manipulating this thermoelectric effect, showcasing the first electrical tunability with an on/off ratio of 103. Moreover, photovoltage measurements reveal a stronger photo-Nernst signal in the graphene/indium selenide heterostructure compared with individual components. Remarkably, we observe a record-high Nernst coefficient of 66.4 μV K−1 T−1 at ultralow temperatures and low magnetic fields, an important step towards applications in quantum information and low-temperature emergent phenomena. A highly tunable Nernst effect has been demonstrated in graphene/indium selenide devices, achieving a record Nernst coefficient at ultralow temperatures, highlighting its potential for quantum technologies and low-temperature applications.","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":null,"pages":null},"PeriodicalIF":38.1,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41565-024-01717-y.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141489628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-02DOI: 10.1038/s41565-024-01689-z
Tania S. Monteiro
A platform for optical levitation of nanoparticles on the surface of a chip shows promise for portable quantum sensors of motion and force.
芯片表面的纳米粒子光学悬浮平台为便携式运动和力量子传感器带来了希望。
{"title":"Nanoparticle levitation on-chip","authors":"Tania S. Monteiro","doi":"10.1038/s41565-024-01689-z","DOIUrl":"10.1038/s41565-024-01689-z","url":null,"abstract":"A platform for optical levitation of nanoparticles on the surface of a chip shows promise for portable quantum sensors of motion and force.","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":null,"pages":null},"PeriodicalIF":38.1,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141489615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-02DOI: 10.1038/s41565-024-01694-2
Seo-Hyun Choi, Jihye Shin, Chanhyun Park, Jung-uk Lee, Jaegyeong Lee, Yuko Ambo, Wookjin Shin, Ri Yu, Ju-Young Kim, Jungsu David Lah, Donghun Shin, Gooreum Kim, Kunwoo Noh, Wuhyun Koh, C. Justin Lee, Jae-Hyun Lee, Minsuk Kwak, Jinwoo Cheon
Neuromodulation technologies are crucial for investigating neuronal connectivity and brain function. Magnetic neuromodulation offers wireless and remote deep brain stimulations that are lacking in optogenetic- and wired-electrode-based tools. However, due to the limited understanding of working principles and poorly designed magnetic operating systems, earlier magnetic approaches have yet to be utilized. Furthermore, despite its importance in neuroscience research, cell-type-specific magnetic neuromodulation has remained elusive. Here we present a nanomaterials-based magnetogenetic toolbox, in conjunction with Cre-loxP technology, to selectively activate genetically encoded Piezo1 ion channels in targeted neuronal populations via torque generated by the nanomagnetic actuators in vitro and in vivo. We demonstrate this cell-type-targeting magnetic approach for remote and spatiotemporal precise control of deep brain neural activity in multiple behavioural models, such as bidirectional feeding control, long-term neuromodulation for weight control in obese mice and wireless modulation of social behaviours in multiple mice in the same physical space. Our study demonstrates the potential of cell-type-specific magnetogenetics as an effective and reliable research tool for life sciences, especially in wireless, long-term and freely behaving animals. Minimally invasive cellular-level target-specific neuromodulation is needed to decipher brain function and neural circuitry. Here nano-magnetogenetics using magnetic force actuating nanoparticles has been reported, enabling wireless and remote stimulation of targeted deep brain neurons in freely behaving animals.
{"title":"In vivo magnetogenetics for cell-type-specific targeting and modulation of brain circuits","authors":"Seo-Hyun Choi, Jihye Shin, Chanhyun Park, Jung-uk Lee, Jaegyeong Lee, Yuko Ambo, Wookjin Shin, Ri Yu, Ju-Young Kim, Jungsu David Lah, Donghun Shin, Gooreum Kim, Kunwoo Noh, Wuhyun Koh, C. Justin Lee, Jae-Hyun Lee, Minsuk Kwak, Jinwoo Cheon","doi":"10.1038/s41565-024-01694-2","DOIUrl":"10.1038/s41565-024-01694-2","url":null,"abstract":"Neuromodulation technologies are crucial for investigating neuronal connectivity and brain function. Magnetic neuromodulation offers wireless and remote deep brain stimulations that are lacking in optogenetic- and wired-electrode-based tools. However, due to the limited understanding of working principles and poorly designed magnetic operating systems, earlier magnetic approaches have yet to be utilized. Furthermore, despite its importance in neuroscience research, cell-type-specific magnetic neuromodulation has remained elusive. Here we present a nanomaterials-based magnetogenetic toolbox, in conjunction with Cre-loxP technology, to selectively activate genetically encoded Piezo1 ion channels in targeted neuronal populations via torque generated by the nanomagnetic actuators in vitro and in vivo. We demonstrate this cell-type-targeting magnetic approach for remote and spatiotemporal precise control of deep brain neural activity in multiple behavioural models, such as bidirectional feeding control, long-term neuromodulation for weight control in obese mice and wireless modulation of social behaviours in multiple mice in the same physical space. Our study demonstrates the potential of cell-type-specific magnetogenetics as an effective and reliable research tool for life sciences, especially in wireless, long-term and freely behaving animals. Minimally invasive cellular-level target-specific neuromodulation is needed to decipher brain function and neural circuitry. Here nano-magnetogenetics using magnetic force actuating nanoparticles has been reported, enabling wireless and remote stimulation of targeted deep brain neurons in freely behaving animals.","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":null,"pages":null},"PeriodicalIF":38.1,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141489633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-01DOI: 10.1038/s41565-024-01676-4
Yang Wang, Igor Baars, Ieva Berzina, Iris Rocamonde-Lago, Boxuan Shen, Yunshi Yang, Marco Lolaico, Janine Waldvogel, Ioanna Smyrlaki, Keying Zhu, Robert A. Harris, Björn Högberg
The clustering of death receptors (DRs) at the membrane leads to apoptosis. With the goal of treating tumours, multivalent molecular tools that initiate this mechanism have been developed. However, DRs are also ubiquitously expressed in healthy tissue. Here we present a stimuli-responsive robotic switch nanodevice that can autonomously and selectively turn on the display of cytotoxic ligand patterns in tumour microenvironments. We demonstrate a switchable DNA origami that normally hides six ligands but displays them as a hexagonal pattern 10 nm in diameter once under higher acidity. This can effectively cluster DRs and trigger apoptosis of human breast cancer cells at pH 6.5 while remaining inert at pH 7.4. When administered to mice bearing human breast cancer xenografts, this nanodevice decreased tumour growth by up to 70%. The data demonstrate the feasibility and opportunities for developing ligand pattern switches as a path for targeted treatment. Here the authors present a pH-sensitive DNA origami nanoswitch that hides ligands for death receptors and displays them as a cytotoxic hexagonal pattern in acidic tumour microenvironments. This reduces tumour growth in a murine model of breast cancer with minimal on-target, off-tumour toxicity.
{"title":"A DNA robotic switch with regulated autonomous display of cytotoxic ligand nanopatterns","authors":"Yang Wang, Igor Baars, Ieva Berzina, Iris Rocamonde-Lago, Boxuan Shen, Yunshi Yang, Marco Lolaico, Janine Waldvogel, Ioanna Smyrlaki, Keying Zhu, Robert A. Harris, Björn Högberg","doi":"10.1038/s41565-024-01676-4","DOIUrl":"10.1038/s41565-024-01676-4","url":null,"abstract":"The clustering of death receptors (DRs) at the membrane leads to apoptosis. With the goal of treating tumours, multivalent molecular tools that initiate this mechanism have been developed. However, DRs are also ubiquitously expressed in healthy tissue. Here we present a stimuli-responsive robotic switch nanodevice that can autonomously and selectively turn on the display of cytotoxic ligand patterns in tumour microenvironments. We demonstrate a switchable DNA origami that normally hides six ligands but displays them as a hexagonal pattern 10 nm in diameter once under higher acidity. This can effectively cluster DRs and trigger apoptosis of human breast cancer cells at pH 6.5 while remaining inert at pH 7.4. When administered to mice bearing human breast cancer xenografts, this nanodevice decreased tumour growth by up to 70%. The data demonstrate the feasibility and opportunities for developing ligand pattern switches as a path for targeted treatment. Here the authors present a pH-sensitive DNA origami nanoswitch that hides ligands for death receptors and displays them as a cytotoxic hexagonal pattern in acidic tumour microenvironments. This reduces tumour growth in a murine model of breast cancer with minimal on-target, off-tumour toxicity.","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":null,"pages":null},"PeriodicalIF":38.1,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41565-024-01676-4.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141475164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Driven by carbon neutral targets, proton exchange membrane water electrolysis is becoming a hot technology due to its capability to convert fluctuating power into green hydrogen. Unfortunately, despite tremendous resources invested in fundamental research, only very few research outcomes have successfully translated into the development of industrial-scale electrolysers.
{"title":"The gap between academic research on proton exchange membrane water electrolysers and industrial demands","authors":"Hua Bing Tao, Han Liu, Kejie Lao, Yaping Pan, Yongbing Tao, Linrui Wen, Nanfeng Zheng","doi":"10.1038/s41565-024-01699-x","DOIUrl":"10.1038/s41565-024-01699-x","url":null,"abstract":"Driven by carbon neutral targets, proton exchange membrane water electrolysis is becoming a hot technology due to its capability to convert fluctuating power into green hydrogen. Unfortunately, despite tremendous resources invested in fundamental research, only very few research outcomes have successfully translated into the development of industrial-scale electrolysers.","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":null,"pages":null},"PeriodicalIF":38.1,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141475160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-01DOI: 10.1038/s41565-024-01695-1
Ki Seok Kim, Junyoung Kwon, Huije Ryu, Changhyun Kim, Hyunseok Kim, Eun-Kyu Lee, Doyoon Lee, Seunghwan Seo, Ne Myo Han, Jun Min Suh, Jekyung Kim, Min-Kyu Song, Sangho Lee, Minsu Seol, Jeehwan Kim
The primary challenge facing silicon-based electronics, crucial for modern technological progress, is difficulty in dimensional scaling. This stems from a severe deterioration of transistor performance due to carrier scattering when silicon thickness is reduced below a few nanometres. Atomically thin two-dimensional (2D) semiconductors still maintain their electrical characteristics even at sub-nanometre scales and offer the potential for monolithic three-dimensional (3D) integration. Here we explore a strategic shift aimed at addressing the scaling bottleneck of silicon by adopting 2D semiconductors as new channel materials. Examining both academic and industrial viewpoints, we delve into the latest trends in channel materials, the integration of metal contacts and gate dielectrics, and offer insights into the emerging landscape of industrializing 2D semiconductor-based transistors for monolithic 3D integration. This Review explores adopting 2D semiconductors to overcome the scaling bottleneck of Si-based electronics. Recent trends and potential approaches for the development of 2D materials as a channel are discussed. Following this, the prerequisites, obstacles and feasible technologies for integrating contacts and gate dielectrics with 2D semiconductor-based channels are examined. The Review also provides an industrial perspective towards facilitating monolithic 3D integration.
{"title":"The future of two-dimensional semiconductors beyond Moore’s law","authors":"Ki Seok Kim, Junyoung Kwon, Huije Ryu, Changhyun Kim, Hyunseok Kim, Eun-Kyu Lee, Doyoon Lee, Seunghwan Seo, Ne Myo Han, Jun Min Suh, Jekyung Kim, Min-Kyu Song, Sangho Lee, Minsu Seol, Jeehwan Kim","doi":"10.1038/s41565-024-01695-1","DOIUrl":"10.1038/s41565-024-01695-1","url":null,"abstract":"The primary challenge facing silicon-based electronics, crucial for modern technological progress, is difficulty in dimensional scaling. This stems from a severe deterioration of transistor performance due to carrier scattering when silicon thickness is reduced below a few nanometres. Atomically thin two-dimensional (2D) semiconductors still maintain their electrical characteristics even at sub-nanometre scales and offer the potential for monolithic three-dimensional (3D) integration. Here we explore a strategic shift aimed at addressing the scaling bottleneck of silicon by adopting 2D semiconductors as new channel materials. Examining both academic and industrial viewpoints, we delve into the latest trends in channel materials, the integration of metal contacts and gate dielectrics, and offer insights into the emerging landscape of industrializing 2D semiconductor-based transistors for monolithic 3D integration. This Review explores adopting 2D semiconductors to overcome the scaling bottleneck of Si-based electronics. Recent trends and potential approaches for the development of 2D materials as a channel are discussed. Following this, the prerequisites, obstacles and feasible technologies for integrating contacts and gate dielectrics with 2D semiconductor-based channels are examined. The Review also provides an industrial perspective towards facilitating monolithic 3D integration.","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":null,"pages":null},"PeriodicalIF":38.1,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141475271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-25DOI: 10.1038/s41565-024-01696-0
Xuan Huang, Jie Feng, Shengnan Hu, Bingyan Xu, Mingsheng Hao, Xiaozhi Liu, Yan Wen, Dong Su, Yujin Ji, Youyong Li, Yinshi Li, Yucheng Huang, Ting-Shan Chan, Zhiwei Hu, Na Tian, Qi Shao, Xiaoqing Huang
Constructing regioselective architectures in heterostructures is important for many applications; however, the targeted design of regioselective architectures is challenging due to the sophisticated processes, impurity pollution and an unclear growth mechanism. Here we successfully realized a one-pot kinetically controlled synthetic framework for constructing regioselective architectures in metallic heterostructures. The key objective was to simultaneously consider the reduction rates of metal precursors and the lattice matching relationship at heterogeneous interfaces. More importantly, this synthetic method also provided phase- and morphology-independent behaviours as foundations for choosing substrate materials, including phase regulation from Pd20Sb7 hexagonal nanoplates (HPs) to Pd8Sb3 HPs, and morphology regulation from Pd20Sb7 HPs to Pd20Sb7 rhombohedra and Pd20Sb7 nanoparticles. Consequently, the activity of regioselective epitaxially grown Pt on Pd20Sb7 HPs was greatly enhanced towards the ethanol oxidation reaction; its activity was 57 times greater than that of commercial Pt/C, and the catalyst showed increased stability (decreasing by 16.3% after 2,000 cycles) and selectivity (72.4%) compared with those of commercial Pt/C (56.0%, 18.2%). This work paves the way for the design of unconventional well-defined heterostructures for use in various applications. A one-pot kinetically controlled synthetic framework for constructing regioselective architectures in a series of well-defined metallic heterostructures is demonstrated, in which phase and morphology regulation of Pd–Sb substrate are implemented to validate the kinetically controlled synthesis.
{"title":"Regioselective epitaxial growth of metallic heterostructures","authors":"Xuan Huang, Jie Feng, Shengnan Hu, Bingyan Xu, Mingsheng Hao, Xiaozhi Liu, Yan Wen, Dong Su, Yujin Ji, Youyong Li, Yinshi Li, Yucheng Huang, Ting-Shan Chan, Zhiwei Hu, Na Tian, Qi Shao, Xiaoqing Huang","doi":"10.1038/s41565-024-01696-0","DOIUrl":"10.1038/s41565-024-01696-0","url":null,"abstract":"Constructing regioselective architectures in heterostructures is important for many applications; however, the targeted design of regioselective architectures is challenging due to the sophisticated processes, impurity pollution and an unclear growth mechanism. Here we successfully realized a one-pot kinetically controlled synthetic framework for constructing regioselective architectures in metallic heterostructures. The key objective was to simultaneously consider the reduction rates of metal precursors and the lattice matching relationship at heterogeneous interfaces. More importantly, this synthetic method also provided phase- and morphology-independent behaviours as foundations for choosing substrate materials, including phase regulation from Pd20Sb7 hexagonal nanoplates (HPs) to Pd8Sb3 HPs, and morphology regulation from Pd20Sb7 HPs to Pd20Sb7 rhombohedra and Pd20Sb7 nanoparticles. Consequently, the activity of regioselective epitaxially grown Pt on Pd20Sb7 HPs was greatly enhanced towards the ethanol oxidation reaction; its activity was 57 times greater than that of commercial Pt/C, and the catalyst showed increased stability (decreasing by 16.3% after 2,000 cycles) and selectivity (72.4%) compared with those of commercial Pt/C (56.0%, 18.2%). This work paves the way for the design of unconventional well-defined heterostructures for use in various applications. A one-pot kinetically controlled synthetic framework for constructing regioselective architectures in a series of well-defined metallic heterostructures is demonstrated, in which phase and morphology regulation of Pd–Sb substrate are implemented to validate the kinetically controlled synthesis.","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":null,"pages":null},"PeriodicalIF":38.1,"publicationDate":"2024-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141448086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-21DOI: 10.1038/s41565-024-01693-3
Yu-Cheng Lu, Jing-Kai Huang, Kai-Yuan Chao, Lain-Jong Li, Vita Pi-Ho Hu
Researchers have been developing 2D materials (2DM) for electronics, which are widely considered a possible replacement for silicon in future technology. Two-dimensional transition metal dichalcogenides are the most promising among the different materials due to their electronic performance and relatively advanced development. Although field-effect transistors (FETs) based on 2D transition metal dichalcogenides have been found to outperform Si in ultrascaled devices, the comparison of 2DM-based and Si-based technologies at the circuit level is still missing. Here we compare 2DM- and Si FET-based static random-access memory (SRAM) circuits across various technology nodes from 16 nm to 1 nm and reveal that the 2DM-based SRAM exhibits superior performance in terms of stability, operating speed and energy efficiency when compared with Si SRAM. This study utilized technology computer-aided design to conduct device and circuit simulations, employing calibrated MoS2 nFETs and WSe2 pFETs. It incorporated layout design rules across various technology nodes to comprehensively analyse their SRAM functionality. The results show that, compared with three-dimensional structure Si transistors at 1 nm node, the planar 2DMFETs exhibited lower capacitance, leading to reduced cell read access time (−16%), reduced time to write (−72%) and lowered dynamic power (−60%). The study highlights the provisional benefits of using planar 2DM transistors to mitigate the performance degradation caused by reduced metal pitch and increased wire resistance in advanced nodes, potentially opening up exciting possibilities for high-performance and low-power circuit applications. Simulations show that two-dimensional-material-based static random-access memory (SRAM) circuits leverage their low parasitic capacitance, counteracting performance declines due to increased interconnect resistance and potentially surpassing Si-based SRAM in terms of both performance and energy efficiency at advanced technology nodes.
{"title":"Projected performance of Si- and 2D-material-based SRAM circuits ranging from 16 nm to 1 nm technology nodes","authors":"Yu-Cheng Lu, Jing-Kai Huang, Kai-Yuan Chao, Lain-Jong Li, Vita Pi-Ho Hu","doi":"10.1038/s41565-024-01693-3","DOIUrl":"10.1038/s41565-024-01693-3","url":null,"abstract":"Researchers have been developing 2D materials (2DM) for electronics, which are widely considered a possible replacement for silicon in future technology. Two-dimensional transition metal dichalcogenides are the most promising among the different materials due to their electronic performance and relatively advanced development. Although field-effect transistors (FETs) based on 2D transition metal dichalcogenides have been found to outperform Si in ultrascaled devices, the comparison of 2DM-based and Si-based technologies at the circuit level is still missing. Here we compare 2DM- and Si FET-based static random-access memory (SRAM) circuits across various technology nodes from 16 nm to 1 nm and reveal that the 2DM-based SRAM exhibits superior performance in terms of stability, operating speed and energy efficiency when compared with Si SRAM. This study utilized technology computer-aided design to conduct device and circuit simulations, employing calibrated MoS2 nFETs and WSe2 pFETs. It incorporated layout design rules across various technology nodes to comprehensively analyse their SRAM functionality. The results show that, compared with three-dimensional structure Si transistors at 1 nm node, the planar 2DMFETs exhibited lower capacitance, leading to reduced cell read access time (−16%), reduced time to write (−72%) and lowered dynamic power (−60%). The study highlights the provisional benefits of using planar 2DM transistors to mitigate the performance degradation caused by reduced metal pitch and increased wire resistance in advanced nodes, potentially opening up exciting possibilities for high-performance and low-power circuit applications. Simulations show that two-dimensional-material-based static random-access memory (SRAM) circuits leverage their low parasitic capacitance, counteracting performance declines due to increased interconnect resistance and potentially surpassing Si-based SRAM in terms of both performance and energy efficiency at advanced technology nodes.","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":null,"pages":null},"PeriodicalIF":38.1,"publicationDate":"2024-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141435972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The buildup of plaques in atherosclerosis leads to cardiovascular events, with chronic unresolved inflammation and overproduction of reactive oxygen species (ROS) being major drivers of plaque progression. Nanotherapeutics that can resolve inflammation and scavenge ROS have the potential to treat atherosclerosis. Here we demonstrate the potential of black phosphorus nanosheets (BPNSs) as a therapeutic agent for the treatment of atherosclerosis. BPNSs can effectively scavenge a broad spectrum of ROS and suppress atherosclerosis-associated pro-inflammatory cytokine production in lesional macrophages. We also demonstrate ROS-responsive, targeted-peptide-modified BPNS-based carriers for the delivery of resolvin D1 (an inflammation-resolving lipid mediator) to lesional macrophages, which further boosts the anti-atherosclerotic efficacy. The targeted nanotherapeutics not only reduce plaque areas but also substantially improve plaque stability in high-fat-diet-fed apolipoprotein E-deficient mice. This study presents a therapeutic strategy against atherosclerosis, and highlights the potential of BPNS-based therapeutics to treat other inflammatory diseases. Targeted black phosphorus nanosheet-based therapeutics that efficiently deliver resolvin D1 to lesional macrophages for the treatment of atherosclerosis by reducing oxidative stress and resolving inflammation have been discussed.
{"title":"Resolvin D1 delivery to lesional macrophages using antioxidative black phosphorus nanosheets for atherosclerosis treatment","authors":"Zhongshan He, Wei Chen, Kuan Hu, Yaoyao Luo, Wanqin Zeng, Xi He, Tingting Li, Jiang Ouyang, Yongjiang Li, Lin Xie, Yiding Zhang, Qin Xu, Shuping Yang, Mengran Guo, Wei Zou, Yanfei Li, Lingjing Huang, Lu Chen, Xingcai Zhang, Qimanguli Saiding, Rui Wang, Ming-Rong Zhang, Na Kong, Tian Xie, Xiangrong Song, Wei Tao","doi":"10.1038/s41565-024-01687-1","DOIUrl":"10.1038/s41565-024-01687-1","url":null,"abstract":"The buildup of plaques in atherosclerosis leads to cardiovascular events, with chronic unresolved inflammation and overproduction of reactive oxygen species (ROS) being major drivers of plaque progression. Nanotherapeutics that can resolve inflammation and scavenge ROS have the potential to treat atherosclerosis. Here we demonstrate the potential of black phosphorus nanosheets (BPNSs) as a therapeutic agent for the treatment of atherosclerosis. BPNSs can effectively scavenge a broad spectrum of ROS and suppress atherosclerosis-associated pro-inflammatory cytokine production in lesional macrophages. We also demonstrate ROS-responsive, targeted-peptide-modified BPNS-based carriers for the delivery of resolvin D1 (an inflammation-resolving lipid mediator) to lesional macrophages, which further boosts the anti-atherosclerotic efficacy. The targeted nanotherapeutics not only reduce plaque areas but also substantially improve plaque stability in high-fat-diet-fed apolipoprotein E-deficient mice. This study presents a therapeutic strategy against atherosclerosis, and highlights the potential of BPNS-based therapeutics to treat other inflammatory diseases. Targeted black phosphorus nanosheet-based therapeutics that efficiently deliver resolvin D1 to lesional macrophages for the treatment of atherosclerosis by reducing oxidative stress and resolving inflammation have been discussed.","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":null,"pages":null},"PeriodicalIF":38.1,"publicationDate":"2024-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141425306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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