Pub Date : 2024-07-15DOI: 10.1038/s41565-024-01713-2
Pengfei Wang, Tingxian Li
The upstream self-diffusion of dissociated protons induces long-lasting electricity generation in 2D nanochannels of MXene/PVA film with low water permeability.
在具有低透水性的 MXene/PVA 薄膜的二维纳米通道中，离解质子的上游自扩散诱导了长效发电。
{"title":"Electricity generated from upstream proton diffusion","authors":"Pengfei Wang, Tingxian Li","doi":"10.1038/s41565-024-01713-2","DOIUrl":"10.1038/s41565-024-01713-2","url":null,"abstract":"The upstream self-diffusion of dissociated protons induces long-lasting electricity generation in 2D nanochannels of MXene/PVA film with low water permeability.","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":null,"pages":null},"PeriodicalIF":38.1,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141618325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-12DOI: 10.1038/s41565-024-01719-w
In Hyeok Choi, Seung Gyo Jeong, Sehwan Song, Sungkyun Park, Dong Bin Shin, Woo Seok Choi, Jong Seok Lee
Chiral phonons have recently been explored as a novel degree of freedom in quantum materials. The angular momentum carried by these quasiparticles is generated by the breaking of chiral degeneracy of phonons, owing to the chiral lattice structure or the rotational motion of ions of the material. In ferromagnets, a mechanism for generating non-equilibrium chiral phonons has been suggested, but their temporal evolution, which obeys Bose–Einstein statistics, remains unclear. Here we report the real-time dynamics of thermalized chiral phonons in an artificial superlattice composed of ferromagnetic metallic SrRuO3 and non-magnetic insulating SrTiO3. Following the photo-induced ultrafast demagnetization in the SrRuO3 layer, we observed the appearance of a magneto-optic signal in the superlattice, which is absent in the SrRuO3 single films. This magneto-optic signal exhibits thermally driven dynamic properties and a clear correlation with the thickness of the non-magnetic SrTiO3 layer, implying that it originates from thermalized chiral phonons. We use numerical calculations considering the magneto-elastic coupling in SrRuO3 to validate our experimental observations and the angular momentum transfer mechanism between the lattice and spin systems in ferromagnetic systems and also to the non-magnetic system. Not only electrons but also phonons can transport angular momentum in solids. Now, in an artificial superlattice, ultrafast demagnetization induces transfer of angular momentum from the spin system to the lattice.
{"title":"Real-time dynamics of angular momentum transfer from spin to acoustic chiral phonon in oxide heterostructures","authors":"In Hyeok Choi, Seung Gyo Jeong, Sehwan Song, Sungkyun Park, Dong Bin Shin, Woo Seok Choi, Jong Seok Lee","doi":"10.1038/s41565-024-01719-w","DOIUrl":"10.1038/s41565-024-01719-w","url":null,"abstract":"Chiral phonons have recently been explored as a novel degree of freedom in quantum materials. The angular momentum carried by these quasiparticles is generated by the breaking of chiral degeneracy of phonons, owing to the chiral lattice structure or the rotational motion of ions of the material. In ferromagnets, a mechanism for generating non-equilibrium chiral phonons has been suggested, but their temporal evolution, which obeys Bose–Einstein statistics, remains unclear. Here we report the real-time dynamics of thermalized chiral phonons in an artificial superlattice composed of ferromagnetic metallic SrRuO3 and non-magnetic insulating SrTiO3. Following the photo-induced ultrafast demagnetization in the SrRuO3 layer, we observed the appearance of a magneto-optic signal in the superlattice, which is absent in the SrRuO3 single films. This magneto-optic signal exhibits thermally driven dynamic properties and a clear correlation with the thickness of the non-magnetic SrTiO3 layer, implying that it originates from thermalized chiral phonons. We use numerical calculations considering the magneto-elastic coupling in SrRuO3 to validate our experimental observations and the angular momentum transfer mechanism between the lattice and spin systems in ferromagnetic systems and also to the non-magnetic system. Not only electrons but also phonons can transport angular momentum in solids. Now, in an artificial superlattice, ultrafast demagnetization induces transfer of angular momentum from the spin system to the lattice.","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":null,"pages":null},"PeriodicalIF":38.1,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141597618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-10DOI: 10.1038/s41565-024-01711-4
Roberta Fabbri, Alessandra Scidà, Emanuela Saracino, Giorgia Conte, Alessandro Kovtun, Andrea Candini, Denisa Kirdajova, Diletta Spennato, Valeria Marchetti, Chiara Lazzarini, Aikaterini Konstantoulaki, Paolo Dambruoso, Marco Caprini, Michele Muccini, Mauro Ursino, Miroslava Anderova, Emanuele Treossi, Roberto Zamboni, Vincenzo Palermo, Valentina Benfenati
Astrocytes are responsible for maintaining homoeostasis and cognitive functions through calcium signalling, a process that is altered in brain diseases. Current bioelectronic tools are designed to study neurons and are not suitable for controlling calcium signals in astrocytes. Here, we show that electrical stimulation of astrocytes using electrodes coated with graphene oxide and reduced graphene oxide induces respectively a slow response to calcium, mediated by external calcium influx, and a sharp one, exclusively due to calcium release from intracellular stores. Our results suggest that the different conductivities of the substrate influence the electric field at the cell–electrolyte or cell–material interfaces, favouring different signalling events in vitro and ex vivo. Patch-clamp, voltage-sensitive dye and calcium imaging data support the proposed model. In summary, we provide evidence of a simple tool to selectively control distinct calcium signals in brain astrocytes for straightforward investigations in neuroscience and bioelectronic medicine. Electrical stimulation of astrocytes using electrodes coated with graphene oxide and reduced graphene oxide can be used to trigger specific calcium signals.
{"title":"Graphene oxide electrodes enable electrical stimulation of distinct calcium signalling in brain astrocytes","authors":"Roberta Fabbri, Alessandra Scidà, Emanuela Saracino, Giorgia Conte, Alessandro Kovtun, Andrea Candini, Denisa Kirdajova, Diletta Spennato, Valeria Marchetti, Chiara Lazzarini, Aikaterini Konstantoulaki, Paolo Dambruoso, Marco Caprini, Michele Muccini, Mauro Ursino, Miroslava Anderova, Emanuele Treossi, Roberto Zamboni, Vincenzo Palermo, Valentina Benfenati","doi":"10.1038/s41565-024-01711-4","DOIUrl":"10.1038/s41565-024-01711-4","url":null,"abstract":"Astrocytes are responsible for maintaining homoeostasis and cognitive functions through calcium signalling, a process that is altered in brain diseases. Current bioelectronic tools are designed to study neurons and are not suitable for controlling calcium signals in astrocytes. Here, we show that electrical stimulation of astrocytes using electrodes coated with graphene oxide and reduced graphene oxide induces respectively a slow response to calcium, mediated by external calcium influx, and a sharp one, exclusively due to calcium release from intracellular stores. Our results suggest that the different conductivities of the substrate influence the electric field at the cell–electrolyte or cell–material interfaces, favouring different signalling events in vitro and ex vivo. Patch-clamp, voltage-sensitive dye and calcium imaging data support the proposed model. In summary, we provide evidence of a simple tool to selectively control distinct calcium signals in brain astrocytes for straightforward investigations in neuroscience and bioelectronic medicine. Electrical stimulation of astrocytes using electrodes coated with graphene oxide and reduced graphene oxide can be used to trigger specific calcium signals.","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":null,"pages":null},"PeriodicalIF":38.1,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41565-024-01711-4.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141573886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-10DOI: 10.1038/s41565-024-01704-3
Can Liu, Tianyao Liu, Zhibin Zhang, Zhipei Sun, Guangyu Zhang, Enge Wang, Kaihui Liu
The exceptional physical properties of two-dimensional (2D) van der Waals (vdW) materials have been extensively researched, driving advances in material synthesis. Epitaxial growth, a prominent synthesis strategy, enables the production of large-area, high-quality 2D films compatible with advanced integrated circuits. Typical 2D single crystals, such as graphene, transition metal dichalcogenides and hexagonal boron nitride, have been epitaxially grown at a wafer scale. A systematic summary is required to offer strategic guidance for the epitaxy of emerging 2D materials. Here we focus on the epitaxy methodologies for 2D vdW materials in two directions: the growth of in-plane single-crystal monolayers and the fabrication of out-of-plane homostructures. We first discuss nucleation control of a single domain and orientation control over multiple domains to achieve large-scale single-crystal monolayers. We analyse the defect levels and measures of crystalline quality of typical 2D vdW materials with various epitaxial growth techniques. We then outline technical routes for the growth of homogeneous multilayers and twisted homostructures. We further summarize the current strategies to guide future efforts in optimizing on-demand fabrication of 2D vdW materials, as well as subsequent device manufacturing for their industrial applications. This Review examines conventional epitaxial growth of 2D van der Waals materials, focusing on in-plane single-crystal monolayer growth and out-of-plane homostructure fabrication. It covers nucleation and orientation control, quality control measures, and homogeneous multilayer and twisted homostructure growth techniques, providing systematic insights for on-demand fabrication of 2D van der Waals materials and their industrial device manufacturing.
{"title":"Understanding epitaxial growth of two-dimensional materials and their homostructures","authors":"Can Liu, Tianyao Liu, Zhibin Zhang, Zhipei Sun, Guangyu Zhang, Enge Wang, Kaihui Liu","doi":"10.1038/s41565-024-01704-3","DOIUrl":"10.1038/s41565-024-01704-3","url":null,"abstract":"The exceptional physical properties of two-dimensional (2D) van der Waals (vdW) materials have been extensively researched, driving advances in material synthesis. Epitaxial growth, a prominent synthesis strategy, enables the production of large-area, high-quality 2D films compatible with advanced integrated circuits. Typical 2D single crystals, such as graphene, transition metal dichalcogenides and hexagonal boron nitride, have been epitaxially grown at a wafer scale. A systematic summary is required to offer strategic guidance for the epitaxy of emerging 2D materials. Here we focus on the epitaxy methodologies for 2D vdW materials in two directions: the growth of in-plane single-crystal monolayers and the fabrication of out-of-plane homostructures. We first discuss nucleation control of a single domain and orientation control over multiple domains to achieve large-scale single-crystal monolayers. We analyse the defect levels and measures of crystalline quality of typical 2D vdW materials with various epitaxial growth techniques. We then outline technical routes for the growth of homogeneous multilayers and twisted homostructures. We further summarize the current strategies to guide future efforts in optimizing on-demand fabrication of 2D vdW materials, as well as subsequent device manufacturing for their industrial applications. This Review examines conventional epitaxial growth of 2D van der Waals materials, focusing on in-plane single-crystal monolayer growth and out-of-plane homostructure fabrication. It covers nucleation and orientation control, quality control measures, and homogeneous multilayer and twisted homostructure growth techniques, providing systematic insights for on-demand fabrication of 2D van der Waals materials and their industrial device manufacturing.","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":null,"pages":null},"PeriodicalIF":38.1,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141573885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-08DOI: 10.1038/s41565-024-01710-5
Tibor Grasser, Michael Waltl, Theresia Knobloch
Room-temperature wafer-scale thermal evaporation of 20 different polycrystalline rare-earth-metal fluoride films for their use in 2D transistors is demonstrated.
演示了 20 种不同的多晶稀土金属氟化物薄膜的室温晶圆级热蒸发，这些薄膜可用于二维晶体管。
{"title":"Fluoride dielectrics for 2D transistors","authors":"Tibor Grasser, Michael Waltl, Theresia Knobloch","doi":"10.1038/s41565-024-01710-5","DOIUrl":"10.1038/s41565-024-01710-5","url":null,"abstract":"Room-temperature wafer-scale thermal evaporation of 20 different polycrystalline rare-earth-metal fluoride films for their use in 2D transistors is demonstrated.","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":null,"pages":null},"PeriodicalIF":38.1,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141556748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A high-performance large-scale-integrated organic phototransistor needs a semiconductor layer that maintains its photoelectric conversion ability well during high-resolution pixelization. However, lacking a precise design for the nanoscale structure, a trade-off between photoelectric performance and device miniaturization greatly limits the success in commercial application. Here we demonstrate a photovoltaic-nanocell enhancement strategy, which overcomes the trade-off and enables high-performance organic phototransistors at a level beyond large-scale integration. Embedding a core–shell photovoltaic nanocell based on perovskite quantum dots in a photocrosslinkable organic semiconductor, ultralarge-scale-integrated (>221 units) imaging chips are manufactured using photolithography. 27 million pixels are interconnected and the pixel density is 3.1 × 106 units cm−2, at least two orders of magnitude higher than in existing organic imaging chips and equivalent to the latest commercial full-frame complementary metal–oxide–semiconductor camera chips. The embedded photovoltaic nanocells induce an in situ photogating modulation and enable photoresponsivity and detectivity of 6.8 × 106 A W−1 and 1.1 × 1013 Jones (at 1 Hz), respectively, achieving the highest values of organic imaging chips at large-scale or higher integration. In addition, a very-large-scale-integrated (>216 units) stretchable biomimetic retina based on photovoltaic nanocells is manufactured for neuromorphic imaging recognition with not only resolution but also photoresponsivity and power consumption approaching those of the biological counterpart. This work reports core–shell photovoltaic nanocells to enhance the photoresponse of the active layer and realize photolithographic manufacturing of large-scale-integrated organic phototransistors for high-resolution biomimetic vision.
{"title":"Photovoltaic nanocells for high-performance large-scale-integrated organic phototransistors","authors":"Shen Zhang, Renzhong Chen, Derong Kong, Yiheng Chen, Wentao Liu, Dingding Jiang, Weiyu Zhao, Cheng Chang, Yingguo Yang, Yunqi Liu, Dacheng Wei","doi":"10.1038/s41565-024-01707-0","DOIUrl":"10.1038/s41565-024-01707-0","url":null,"abstract":"A high-performance large-scale-integrated organic phototransistor needs a semiconductor layer that maintains its photoelectric conversion ability well during high-resolution pixelization. However, lacking a precise design for the nanoscale structure, a trade-off between photoelectric performance and device miniaturization greatly limits the success in commercial application. Here we demonstrate a photovoltaic-nanocell enhancement strategy, which overcomes the trade-off and enables high-performance organic phototransistors at a level beyond large-scale integration. Embedding a core–shell photovoltaic nanocell based on perovskite quantum dots in a photocrosslinkable organic semiconductor, ultralarge-scale-integrated (>221 units) imaging chips are manufactured using photolithography. 27 million pixels are interconnected and the pixel density is 3.1 × 106 units cm−2, at least two orders of magnitude higher than in existing organic imaging chips and equivalent to the latest commercial full-frame complementary metal–oxide–semiconductor camera chips. The embedded photovoltaic nanocells induce an in situ photogating modulation and enable photoresponsivity and detectivity of 6.8 × 106 A W−1 and 1.1 × 1013 Jones (at 1 Hz), respectively, achieving the highest values of organic imaging chips at large-scale or higher integration. In addition, a very-large-scale-integrated (>216 units) stretchable biomimetic retina based on photovoltaic nanocells is manufactured for neuromorphic imaging recognition with not only resolution but also photoresponsivity and power consumption approaching those of the biological counterpart. This work reports core–shell photovoltaic nanocells to enhance the photoresponse of the active layer and realize photolithographic manufacturing of large-scale-integrated organic phototransistors for high-resolution biomimetic vision.","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":null,"pages":null},"PeriodicalIF":38.1,"publicationDate":"2024-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141534773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Quantum materials exhibit dissipationless topological edge state transport with quantized Hall conductance, offering notable potential for fault-tolerant computing technologies. However, the development of topological edge state-based computing devices remains a challenge. Here we report the selective and quasi-continuous ferroelectric switching of topological Chern insulator devices, showcasing a proof-of-concept demonstration in noise-immune neuromorphic computing. We fabricate this ferroelectric Chern insulator device by encapsulating magic-angle twisted bilayer graphene with doubly aligned h-BN layers and observe the coexistence of the interfacial ferroelectricity and the topological Chern insulating states. The observed ferroelectricity exhibits an anisotropic dependence on the in-plane magnetic field. By tuning the amplitude of the gate voltage pulses, we achieve ferroelectric switching between any pair of Chern insulating states in the presence of a finite magnetic field, resulting in 1,280 ferroelectric states with distinguishable Hall resistance levels on a single device. Furthermore, we demonstrate deterministic switching between two arbitrary levels among the record-high number of ferroelectric states. This unique switching capability enables the implementation of a convolutional neural network resistant to external noise, utilizing the quantized Hall conductance levels of the Chern insulator device as weights. Our study provides a promising avenue towards the development of topological quantum neuromorphic computing, where functionality and performance can be drastically enhanced by topological quantum materials. Selective and quasi-continuous ferroelectric switching has been successfully implemented in devices based on topological Chern insulators, enabling the realization of 1,280 ferroelectric states for a proof-of-concept demonstration in noise-immune neuromorphic computing.
{"title":"Selective and quasi-continuous switching of ferroelectric Chern insulator devices for neuromorphic computing","authors":"Moyu Chen, Yongqin Xie, Bin Cheng, Zaizheng Yang, Xin-Zhi Li, Fanqiang Chen, Qiao Li, Jiao Xie, Kenji Watanabe, Takashi Taniguchi, Wen-Yu He, Menghao Wu, Shi-Jun Liang, Feng Miao","doi":"10.1038/s41565-024-01698-y","DOIUrl":"10.1038/s41565-024-01698-y","url":null,"abstract":"Quantum materials exhibit dissipationless topological edge state transport with quantized Hall conductance, offering notable potential for fault-tolerant computing technologies. However, the development of topological edge state-based computing devices remains a challenge. Here we report the selective and quasi-continuous ferroelectric switching of topological Chern insulator devices, showcasing a proof-of-concept demonstration in noise-immune neuromorphic computing. We fabricate this ferroelectric Chern insulator device by encapsulating magic-angle twisted bilayer graphene with doubly aligned h-BN layers and observe the coexistence of the interfacial ferroelectricity and the topological Chern insulating states. The observed ferroelectricity exhibits an anisotropic dependence on the in-plane magnetic field. By tuning the amplitude of the gate voltage pulses, we achieve ferroelectric switching between any pair of Chern insulating states in the presence of a finite magnetic field, resulting in 1,280 ferroelectric states with distinguishable Hall resistance levels on a single device. Furthermore, we demonstrate deterministic switching between two arbitrary levels among the record-high number of ferroelectric states. This unique switching capability enables the implementation of a convolutional neural network resistant to external noise, utilizing the quantized Hall conductance levels of the Chern insulator device as weights. Our study provides a promising avenue towards the development of topological quantum neuromorphic computing, where functionality and performance can be drastically enhanced by topological quantum materials. Selective and quasi-continuous ferroelectric switching has been successfully implemented in devices based on topological Chern insulators, enabling the realization of 1,280 ferroelectric states for a proof-of-concept demonstration in noise-immune neuromorphic computing.","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":null,"pages":null},"PeriodicalIF":38.1,"publicationDate":"2024-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141534774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-04DOI: 10.1038/s41565-024-01700-7
Coexisting ferroelectricity and Chern insulators have been achieved using a doubly aligned magic-angle twisted bilayer graphene device. This device enables selective switching of topologically protected edge states and quasi-continuous ferroelectric levels that can support noise-immune neuromorphic computing applications.
{"title":"Topologically protected edge states for neuromorphic computing","authors":"","doi":"10.1038/s41565-024-01700-7","DOIUrl":"10.1038/s41565-024-01700-7","url":null,"abstract":"Coexisting ferroelectricity and Chern insulators have been achieved using a doubly aligned magic-angle twisted bilayer graphene device. This device enables selective switching of topologically protected edge states and quasi-continuous ferroelectric levels that can support noise-immune neuromorphic computing applications.","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":null,"pages":null},"PeriodicalIF":38.1,"publicationDate":"2024-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141534775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-03DOI: 10.1038/s41565-024-01697-z
Varun Dolia, Halleh B. Balch, Sahil Dagli, Sajjad Abdollahramezani, Hamish Carr Delgado, Parivash Moradifar, Kai Chang, Ariel Stiber, Fareeha Safir, Mark Lawrence, Jack Hu, Jennifer A. Dionne
Metasurfaces precisely control the amplitude, polarization and phase of light, with applications spanning imaging, sensing, modulation and computing. Three crucial performance metrics of metasurfaces and their constituent resonators are the quality factor (Q factor), mode volume (Vm) and ability to control far-field radiation. Often, resonators face a trade-off between these parameters: a reduction in Vm leads to an equivalent reduction in Q, albeit with more control over radiation. Here we demonstrate that this perceived compromise is not inevitable: high quality factor, subwavelength Vm and controlled dipole-like radiation can be achieved simultaneously. We design high quality factor, very-large-scale-integrated silicon nanoantenna pixels (VINPix) that combine guided mode resonance waveguides with photonic crystal cavities. With optimized nanoantennas, we achieve Q factors exceeding 1,500 with Vm less than 0.1 $${(lambda /{n}_{{{{rm{air}}}}})}^{3}$$ . Each nanoantenna is individually addressable by free-space light and exhibits dipole-like scattering to the far-field. Resonator densities exceeding a million nanoantennas per cm2 can be achieved. As a proof-of-concept application, we show spectrometer-free, spatially localized, refractive-index sensing, and fabrication of an 8 mm × 8 mm VINPix array. Our platform provides a foundation for compact, densely multiplexed devices such as spatial light modulators, computational spectrometers and in situ environmental sensors. An optimized design of free-space silicon nanoantennas combines high quality factor and low mode volume, reducing the trade-off between these parameters.
{"title":"Very-large-scale-integrated high quality factor nanoantenna pixels","authors":"Varun Dolia, Halleh B. Balch, Sahil Dagli, Sajjad Abdollahramezani, Hamish Carr Delgado, Parivash Moradifar, Kai Chang, Ariel Stiber, Fareeha Safir, Mark Lawrence, Jack Hu, Jennifer A. Dionne","doi":"10.1038/s41565-024-01697-z","DOIUrl":"10.1038/s41565-024-01697-z","url":null,"abstract":"Metasurfaces precisely control the amplitude, polarization and phase of light, with applications spanning imaging, sensing, modulation and computing. Three crucial performance metrics of metasurfaces and their constituent resonators are the quality factor (Q factor), mode volume (Vm) and ability to control far-field radiation. Often, resonators face a trade-off between these parameters: a reduction in Vm leads to an equivalent reduction in Q, albeit with more control over radiation. Here we demonstrate that this perceived compromise is not inevitable: high quality factor, subwavelength Vm and controlled dipole-like radiation can be achieved simultaneously. We design high quality factor, very-large-scale-integrated silicon nanoantenna pixels (VINPix) that combine guided mode resonance waveguides with photonic crystal cavities. With optimized nanoantennas, we achieve Q factors exceeding 1,500 with Vm less than 0.1 $${(lambda /{n}_{{{{rm{air}}}}})}^{3}$$ . Each nanoantenna is individually addressable by free-space light and exhibits dipole-like scattering to the far-field. Resonator densities exceeding a million nanoantennas per cm2 can be achieved. As a proof-of-concept application, we show spectrometer-free, spatially localized, refractive-index sensing, and fabrication of an 8 mm × 8 mm VINPix array. Our platform provides a foundation for compact, densely multiplexed devices such as spatial light modulators, computational spectrometers and in situ environmental sensors. An optimized design of free-space silicon nanoantennas combines high quality factor and low mode volume, reducing the trade-off between these parameters.","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":null,"pages":null},"PeriodicalIF":38.1,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141496036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-03DOI: 10.1038/s41565-024-01708-z
Wouter Jolie, Thomas Michely
A metallic line defect in a layer of molybdenum disulfide can serve as an atomically narrow gate electrode demonstrating how to further miniaturize two-dimensional field effect transistors.
二硫化钼层中的金属线缺陷可用作原子窄栅电极，展示了如何进一步微型化二维场效应晶体管。
{"title":"1D metals for 2D electronics","authors":"Wouter Jolie, Thomas Michely","doi":"10.1038/s41565-024-01708-z","DOIUrl":"10.1038/s41565-024-01708-z","url":null,"abstract":"A metallic line defect in a layer of molybdenum disulfide can serve as an atomically narrow gate electrode demonstrating how to further miniaturize two-dimensional field effect transistors.","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":null,"pages":null},"PeriodicalIF":38.1,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141495977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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