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Deterministic switching of perpendicular magnetization by out-of-plane anti-damping magnon torques. 通过平面外反阻尼磁子转矩实现垂直磁化的确定性切换。
IF 38.1 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-07-24 DOI: 10.1038/s41565-024-01741-y
Fei Wang, Guoyi Shi, Dongsheng Yang, Hui Ru Tan, Chenhui Zhang, Jiayu Lei, Yuchen Pu, Shuhan Yang, Anjan Soumyanarayanan, Mehrdad Elyasi, Hyunsoo Yang

Spin-wave excitations of magnetic moments (or magnons) can transport spin angular momentum in insulating magnetic materials. This property distinguishes magnonic devices from traditional electronics, where power consumption results from electrons' movement. Recently, magnon torques have been used to switch perpendicular magnetization in the presence of an external magnetic field. Here we present a material system composed of WTe2/antiferromagnetic insulator NiO/ferromagnet CoFeB heterostructures that allows magnetic field-free switching of the perpendicular magnetization. The magnon currents, with a spin polarization canting of -8.5° relative to the sample plane, traverse the 25-nm-thick polycrystalline NiO layer while preserving their original polarization direction, subsequently exerting an out-of-plane anti-damping magnon torque on the ferromagnetic layer. Using this mechanism, we achieve a 190-fold reduction in power consumption in PtTe2/WTe2/NiO/CoFeB heterostructures compared to Bi2Te3/NiO/CoFeB control samples, which only exhibit in-plane magnon torques. Our field-free demonstration contributes to the realization of all-electric, low-power, perpendicular magnetization switching devices.

磁矩(或磁子)的自旋波激发可在绝缘磁性材料中传输自旋角动量。这一特性使磁子设备有别于传统的电子设备,后者的功耗来自电子运动。最近,磁子力矩已被用于在外部磁场存在的情况下切换垂直磁化。在这里,我们介绍了一种由 WTe2/反铁磁绝缘体 NiO/铁磁体 CoFeB 异质结构组成的材料系统,它可以实现垂直磁化的无磁场切换。磁子电流相对于样品平面的自旋极化倾斜度为-8.5°,在保持其原始极化方向的同时穿过 25 纳米厚的多晶氧化镍层,随后在铁磁层上施加平面外抗阻尼磁子力矩。利用这种机制,我们实现了 PtTe2/WTe2/NiO/CoFeB 异质结构的功耗比 Bi2Te3/NiO/CoFeB 对照样品降低 190 倍,而 Bi2Te3/NiO/CoFeB 对照样品只表现出平面内的磁子力矩。我们的无磁场演示有助于实现全电、低功耗、垂直磁化开关器件。
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引用次数: 0
Electrically tunable space-time metasurfaces at optical frequencies. 光频率下的电可调时空元表面。
IF 38.1 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-07-24 DOI: 10.1038/s41565-024-01728-9
Jared Sisler, Prachi Thureja, Meir Y Grajower, Ruzan Sokhoyan, Ivy Huang, Harry A Atwater

Active metasurfaces enable dynamic manipulation of the scattered electromagnetic wavefront by spatially varying the phase and amplitude across arrays of subwavelength scatterers, imparting momentum to outgoing light. Similarly, periodic temporal modulation of active metasurfaces allows for manipulation of the output frequency of light. Here we combine spatial and temporal modulation in electrically modulated reflective metasurfaces operating at 1,530 nm to generate and diffract a spectrum of sidebands at megahertz frequencies. Temporal modulation with tailored waveforms enables the design of a spectrum of sidebands. By impressing a spatial phase gradient on the metasurface, we can diffract selected combinations of sideband frequencies. Combining active temporal and spatial variation can enable unique optical functions, such as frequency mixing, harmonic beam steering or shaping, and breaking of Lorentz reciprocity.

有源元表面可通过改变亚波长散射体阵列的空间相位和振幅,对散射电磁波面进行动态操控,从而为出射光线注入动量。同样,对有源元表面进行周期性的时间调制,也能操纵光的输出频率。在这里,我们将空间调制与时间调制相结合,在波长为 1530 纳米的电调制反射元表面上产生并衍射出兆赫兹频率的边带光谱。使用定制波形进行时间调制可以设计边带频谱。通过在元表面施加空间相位梯度,我们可以衍射出选定的边带频率组合。将主动时间和空间变化结合起来,可以实现独特的光学功能,如混频、谐波光束转向或整形以及打破洛伦兹互易性。
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引用次数: 0
Third-order nonlinear Hall effect in a quantum Hall system. 量子霍尔系统中的三阶非线性霍尔效应。
IF 38.1 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-07-24 DOI: 10.1038/s41565-024-01730-1
Pan He, Hiroki Isobe, Gavin Kok Wai Koon, Jun You Tan, Junxiong Hu, Jingru Li, Naoto Nagaosa, Jian Shen

In two-dimensional systems, perpendicular magnetic fields can induce a bulk band gap and chiral edge states, which gives rise to the quantum Hall effect. The quantum Hall effect is characterized by zero longitudinal resistance (Rxx) and Hall resistance (Rxy) plateaus quantized to h/(υe2) in the linear response regime, where υ is the Landau level filling factor, e is the elementary charge and h is Planck's constant. Here we explore the nonlinear response of monolayer graphene when tuned to a quantum Hall state. We observe a third-order Hall effect that exhibits a nonzero voltage plateau scaling cubically with the probe current. By contrast, the third-order longitudinal voltage remains zero. The magnitude of the third-order response is insensitive to variations in magnetic field (down to ~5 T) and in temperature (up to ~60 K). Moreover, the third-order response emerges in graphene devices with a variety of geometries, different substrates and stacking configurations. We term the effect third-order nonlinear response of the quantum Hall state and propose that electron-electron interaction between the quantum Hall edge states is the origin of the nonlinear response of the quantum Hall state.

在二维系统中,垂直磁场可以诱发体带隙和手性边缘态,从而产生量子霍尔效应。量子霍尔效应的特征是零纵向电阻(Rxx)和霍尔电阻(Rxy)高原,在线性响应机制中量化为 h/(υe2),其中 υ 是朗道水平填充因子,e 是基本电荷,h 是普朗克常数。在这里,我们探讨了单层石墨烯在调谐到量子霍尔态时的非线性响应。我们观察到一种三阶霍尔效应,它表现出一个非零电压高原,与探针电流成立方缩放。相比之下,三阶纵向电压仍然为零。三阶响应的大小对磁场变化(低至 ~5 T)和温度变化(高至 ~60 K)不敏感。此外,三阶响应出现在具有各种几何形状、不同基底和堆叠配置的石墨烯器件中。我们将这种效应称为量子霍尔态的三阶非线性响应,并提出量子霍尔边缘态之间的电子-电子相互作用是量子霍尔态非线性响应的起源。
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引用次数: 0
Publisher Correction: Oral mitochondrial transplantation using nanomotors to treat ischaemic heart disease 出版商更正:利用纳米电机进行口服线粒体移植治疗缺血性心脏病。
IF 38.1 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-07-23 DOI: 10.1038/s41565-024-01760-9
Ziyu Wu, Lin Chen, Wenyan Guo, Jun Wang, Haiya Ni, Jianing Liu, Wentao Jiang, Jian Shen, Chun Mao, Min Zhou, Mimi Wan
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引用次数: 0
Monolithic three-dimensional integration of complementary two-dimensional field-effect transistors 互补二维场效应晶体管的单片三维集成。
IF 38.1 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-07-23 DOI: 10.1038/s41565-024-01705-2
Rahul Pendurthi, Najam U Sakib, Muhtasim Ul Karim Sadaf, Zhiyu Zhang, Yongwen Sun, Chen Chen, Darsith Jayachandran, Aaryan Oberoi, Subir Ghosh, Shalini Kumari, Sergei P. Stepanoff, Divya Somvanshi, Yang Yang, Joan M. Redwing, Douglas E. Wolfe, Saptarshi Das
The semiconductor industry is transitioning to the ‘More Moore’ era, driven by the adoption of three-dimensional (3D) integration schemes surpassing the limitations of traditional two-dimensional scaling. Although innovative packaging solutions have made 3D integrated circuits (ICs) commercially viable, the inclusion of through-silicon vias and microbumps brings about increased area overhead and introduces parasitic capacitances that limit overall performance. Monolithic 3D integration (M3D) is regarded as the future of 3D ICs, yet its application faces hurdles in silicon ICs due to restricted thermal processing budgets in upper tiers, which can degrade device performance. To overcome these limitations, emerging materials like carbon nanotubes and two-dimensional semiconductors have been integrated into the back end of silicon ICs. Here we report the M3D integration of complementary WSe2 FETs, in which n-type FETs are placed in tier 1 and p-type FETs are placed in tier 2. In particular, we achieve dense and scaled integration through 300 nm vias with a pitch of <1 µm, connecting more than 300 devices in tiers 1 and 2. Moreover, we have effectively implemented vertically integrated logic gates, encompassing inverters, NAND gates and NOR gates. Our demonstration highlights the two-dimensional materials’ role in advancing M3D integration in complementary metal–oxide–semiconductor circuits. Monolithic 3D integration of complementary WSe2 FETs has been achieved, featuring n-type FETs in tier 1 and p-type FETs in tier 2. Dense vias are realized using a pitch of less than 1 µm, facilitating 3D inverters as well as NAND and NOR logic functionalities.
在三维(3D)集成方案的推动下,半导体行业正在向 "更摩尔"(More Moore)时代过渡,超越了传统二维扩展的局限性。虽然创新的封装解决方案使三维集成电路(IC)具有了商业可行性,但硅通孔和微凸块的加入增加了面积开销,并引入了限制整体性能的寄生电容。单片三维集成(M3D)被认为是三维集成电路的未来发展方向,但在硅集成电路中的应用却面临着障碍,因为上层的热处理预算有限,会降低器件性能。为了克服这些限制,碳纳米管和二维半导体等新兴材料已被集成到硅集成电路的后端。在此,我们报告了互补 WSe2 FET 的 M3D 集成,其中 n 型 FET 位于第 1 层,p 型 FET 位于第 2 层。特别是,我们通过间距为 300 nm 的通孔实现了高密度和按比例的集成。
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引用次数: 0
High-resolution three-dimensional imaging of topological textures in nanoscale single-diamond networks. 纳米级单金刚石网络拓扑纹理的高分辨率三维成像。
IF 38.1 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-07-23 DOI: 10.1038/s41565-024-01735-w
D Karpov, K Djeghdi, M Holler, S Narjes Abdollahi, K Godlewska, C Donnelly, T Yuasa, H Sai, U B Wiesner, B D Wilts, U Steiner, M Musya, S Fukami, H Ohno, I Gunkel, A Diaz, J Llandro

Topological defects-extended lattice deformations that are robust against local defects and annealing-have been exploited to engineer novel properties in both hard and soft materials. Yet, their formation kinetics and nanoscale three-dimensional structure are poorly understood, impeding their benefits for nanofabrication. We describe the fabrication of a pair of topological defects in the volume of a single-diamond network (space group Fd 3 ¯ m) templated into gold from a triblock terpolymer crystal. Using X-ray nanotomography, we resolve the three-dimensional structure of nearly 70,000 individual single-diamond unit cells with a spatial resolution of 11.2 nm, allowing analysis of the long-range order of the network. The defects observed morphologically resemble the comet and trefoil patterns of equal and opposite half-integer topological charges observed in liquid crystals. Yet our analysis of strain in the network suggests typical hard matter behaviour. Our analysis approach does not require a priori knowledge of the expected positions of the nodes in three-dimensional nanostructured systems, allowing the identification of distorted morphologies and defects in large samples.

拓扑缺陷是一种扩展的晶格变形,对局部缺陷和退火都有很强的抵抗力,人们利用这种缺陷在软硬材料中设计出了新的特性。然而,人们对拓扑缺陷的形成动力学和纳米级三维结构知之甚少,这阻碍了它们在纳米制造中的应用。我们介绍了在从三嵌段三元共聚物晶体模板化成金的单金刚石网络(空间群 Fd 3 ¯ m)体积中制造一对拓扑缺陷的方法。利用 X 射线纳米层析技术,我们以 11.2 纳米的空间分辨率解析了近 70,000 个单个单金刚石单元格的三维结构,从而分析了网络的长程有序性。观察到的缺陷在形态上类似于液晶中观察到的彗星和三叶草图案,这些图案的拓扑电荷相等且相反,为半整数。然而,我们对网络应变的分析表明,这是典型的硬物质行为。我们的分析方法不需要先验地了解三维纳米结构系统中节点的预期位置,因此可以识别大型样品中的扭曲形态和缺陷。
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引用次数: 0
A bispecific nanosystem activates endogenous natural killer cells in the bone marrow for haematologic malignancies therapy. 一种双特异性纳米系统可激活骨髓中的内源性自然杀伤细胞,用于治疗血液恶性肿瘤。
IF 38.1 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-07-23 DOI: 10.1038/s41565-024-01736-9
Yanqin Zhang, Yanfang Deng, Yuewen Zhai, Yu Li, Yuting Li, Juequan Li, Yueqing Gu, Siwen Li

Haematologic malignancies commonly arise from the bone marrow lesion, yet there are currently no effective targeted therapies against tumour cells in this location. Here we constructed a bone-marrow-targeting nanosystem, CSF@E-Hn, which is based on haematopoietic-stem-cell-derived nanovesicles adorned with gripper ligands (aPD-L1 and aNKG2D) and encapsulated with colony-stimulating factor (CSF) for the treatment of haematologic malignancies. CSF@E-Hn targets the bone marrow and, thanks to the gripper ligands, pulls together tumour cells and natural killer cells, activating the latter for specific tumour cell targeting and elimination. The therapeutic efficacy was validated in mice bearing acute myeloid leukaemia and multiple myeloma. The comprehensive assessment of the post-treatment bone marrow microenvironment revealed that the integration of CSF into a bone-marrow-targeted nanosystem promoted haematopoietic stem cell differentiation, boosted memory T cell generation and maintained bone homoeostasis, with long-term prevention of relapse. Our nanosystem represents a promising strategy for the treatment of haematologic malignancies.

血液恶性肿瘤通常来自骨髓病变,但目前还没有针对该部位肿瘤细胞的有效靶向疗法。在这里,我们构建了一种骨髓靶向纳米系统 CSF@E-Hn,它基于造血干细胞衍生的纳米颗粒,颗粒上装饰有抓取配体(aPD-L1 和 aNKG2D),并包裹有集落刺激因子(CSF),用于治疗血液恶性肿瘤。CSF@E-Hn以骨髓为靶点,通过抓取配体将肿瘤细胞和自然杀伤细胞聚集在一起,激活后者进行特异性肿瘤细胞靶向清除。在罹患急性髓性白血病和多发性骨髓瘤的小鼠身上验证了其疗效。对治疗后骨髓微环境的综合评估显示,将 CSF 纳入骨髓靶向纳米系统可促进造血干细胞分化,促进记忆 T 细胞的生成,维持骨平衡,长期预防复发。我们的纳米系统是治疗血液恶性肿瘤的一种前景广阔的策略。
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引用次数: 0
Magnetic-field-driven targeting of exosomes modulates immune and metabolic changes in dystrophic muscle 磁场驱动的外泌体靶向调节肌营养不良症肌肉的免疫和代谢变化
IF 38.3 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-07-22 DOI: 10.1038/s41565-024-01725-y
Chiara Villa, Valeria Secchi, Mirco Macchi, Luana Tripodi, Elena Trombetta, Desiree Zambroni, Francesco Padelli, Michele Mauri, Monica Molinaro, Rebecca Oddone, Andrea Farini, Antonella De Palma, Laura Varela Pinzon, Federica Santarelli, Roberto Simonutti, PierLuigi Mauri, Laura Porretti, Marcello Campione, Domenico Aquino, Angelo Monguzzi, Yvan Torrente

Exosomes are promising therapeutics for tissue repair and regeneration to induce and guide appropriate immune responses in dystrophic pathologies. However, manipulating exosomes to control their biodistribution and targeting them in vivo to achieve adequate therapeutic benefits still poses a major challenge. Here we overcome this limitation by developing an externally controlled delivery system for primed annexin A1 myo-exosomes (Exomyo). Effective nanocarriers are realized by immobilizing the Exomyo onto ferromagnetic nanotubes to achieve controlled delivery and localization of Exomyo to skeletal muscles by systemic injection using an external magnetic field. Quantitative muscle-level analyses revealed that macrophages dominate the uptake of Exomyo from these ferromagnetic nanotubes in vivo to synergistically promote beneficial muscle responses in a murine animal model of Duchenne muscular dystrophy. Our findings provide insights into the development of exosome-based therapies for muscle diseases and, in general, highlight the formulation of effective functional nanocarriers aimed at optimizing exosome biodistribution.

外泌体是一种很有前景的组织修复和再生疗法,可诱导和引导适当的免疫反应,治疗组织萎缩性病变。然而,如何操纵外泌体以控制其生物分布并将其用于体内靶向以获得充分的治疗效果仍是一大挑战。在这里,我们通过开发一种外部控制的引物附件素 A1 肌外体(Exomyo)递送系统来克服这一限制。通过将Exomyo固定在铁磁性纳米管上,实现了有效的纳米载体,从而利用外部磁场通过全身注射将Exomyo可控地输送到骨骼肌并定位。肌肉层面的定量分析显示,在杜氏肌营养不良症的小鼠动物模型中,巨噬细胞主导了这些铁磁纳米管对Exomyo的吸收,从而协同促进了有益的肌肉反应。我们的研究结果为开发基于外泌体的肌肉疾病疗法提供了启示,总体而言,突出了旨在优化外泌体生物分布的有效功能纳米载体的配方。
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引用次数: 0
Even-integer quantum Hall effect in an oxide caused by a hidden Rashba effect 由隐藏的拉什巴效应引起的氧化物中的偶整数量子霍尔效应
IF 38.3 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-07-22 DOI: 10.1038/s41565-024-01732-z
Jingyue Wang, Junwei Huang, Daniel Kaplan, Xuehan Zhou, Congwei Tan, Jing Zhang, Gangjian Jin, Xuzhong Cong, Yongchao Zhu, Xiaoyin Gao, Yan Liang, Huakun Zuo, Zengwei Zhu, Ruixue Zhu, Ady Stern, Hongtao Liu, Peng Gao, Binghai Yan, Hongtao Yuan, Hailin Peng

In the presence of a high magnetic field, quantum Hall systems usually host both even- and odd-integer quantized states because of lifted band degeneracies. Selective control of these quantized states is challenging but essential to understand the exotic ground states and manipulate the spin textures. Here we demonstrate the quantum Hall effect in Bi2O2Se thin films. In magnetic fields as high as 50 T, we observe only even-integer quantum Hall states, but there is no sign of odd-integer states. However, when reducing the thickness of the epitaxial Bi2O2Se film to one unit cell, we observe both odd- and even-integer states in this Janus (asymmetric) film grown on SrTiO3. By means of a Rashba bilayer model based on the ab initio band structures of Bi2O2Se thin films, we can ascribe the only even-integer states in thicker films to the hidden Rasbha effect, where the local inversion-symmetry breaking in two sectors of the [Bi2O2]2+ layer yields opposite Rashba spin polarizations, which compensate with each other. In the one-unit-cell Bi2O2Se film grown on SrTiO3, the asymmetry introduced by the top surface and bottom interface induces a net polar field. The resulting global Rashba effect lifts the band degeneracies present in the symmetric case of thicker films.

在高磁场条件下,量子霍尔系统通常同时存在偶数和奇数整数量子化态,这是因为提升带变性的缘故。选择性地控制这些量子化态具有挑战性,但对于理解奇异基态和操纵自旋纹理至关重要。在这里,我们展示了 Bi2O2Se 薄膜中的量子霍尔效应。在高达 50 T 的磁场中,我们只观察到偶整数量子霍尔态,而没有奇整数态的迹象。然而,当把外延 Bi2O2Se 薄膜的厚度减小到一个晶胞时,我们在这种生长在 SrTiO3 上的 Janus(非对称)薄膜中观察到奇数和偶数整数态。通过基于 Bi2O2Se 薄膜的ab initio 带结构的拉什巴双层模型,我们可以将较厚薄膜中唯一的偶整数态归因于隐藏的拉什巴效应,即[Bi2O2]2+ 层两个扇区的局部反转对称破缺产生了相反的拉什巴自旋极化,而这两种极化相互补偿。在生长在 SrTiO3 上的单胞 Bi2O2Se 薄膜中,顶部表面和底部界面引入的不对称会诱发净极性场。由此产生的全局拉什巴效应消除了较厚薄膜对称情况下的带退行性。
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引用次数: 0
Author Correction: All-optical free-space routing of upconverted light by metasurfaces via nonlinear interferometry 作者更正:元表面通过非线性干涉测量法实现上转换光的全光学自由空间路由。
IF 38.1 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-07-19 DOI: 10.1038/s41565-024-01752-9
Agostino Di Francescantonio, Attilio Zilli, Davide Rocco, Vincent Vinel, Laure Coudrat, Fabrizio Conti, Paolo Biagioni, Lamberto Duò, Aristide Lemaître, Costantino De Angelis, Giuseppe Leo, Marco Finazzi, Michele Celebrano
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引用次数: 0
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Nature nanotechnology
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