Pub Date : 2025-11-03DOI: 10.1038/s41566-025-01789-9
Sai Kanth Dacha, Yun Zhao, Karl J. McNulty, Gaurang R. Bhatt, Michal Lipson, Alexander L. Gaeta
Field-deployable integrated photonic devices co-packaged with electronics will enable important applications such as optical interconnects, quantum information processing, precision measurements, spectroscopy and microwave generation. Significant progress has been made over the past two decades on increasing the functional complexity of photonic chips. However, a critical challenge that remains is the lack of scalable techniques to overcome thermal perturbations arising from the environment and co-packaged electronics. Here we demonstrate a fully integrated scheme to monitor and stabilize the temperature of a high-Q microresonator on a Si-based chip, which can serve as a photonic frequency reference. Our approach relies on a thin-film metallic resistor placed directly above the microcavity, acting as an integrated resistance thermometer, enabling unique mapping of the cavity’s absolute resonance wavelength to the thermometer’s electrical resistance. Following a one-time calibration, the microresonator can be accurately and repeatably tuned to any desired absolute resonance wavelength using thermometry alone with a root-mean-squared wavelength error of <0.8 pm over a time span of days. We frequency-lock a distributed feedback laser to the microresonator and demonstrate a 48× reduction in its frequency drift, resulting in its centre wavelength staying within ±0.5 pm of the mean over a duration of 50 h in the presence of substantial ambient fluctuations, outperforming many commercial distributed feedback and wavelength-locker-based laser systems. Finally, we stabilize a soliton mode-locked Kerr comb without the need for photodetection, paving the way for Kerr-comb-based photonic devices that can potentially operate in the desired mode-locked state indefinitely. Integrating a thin-film resistance thermometer above a high-Q SiN microresonator enables local temperature monitoring and active stabilization of its resonance wavelength. The emission wavelength of a distributed feedback laser locked to the microresonator fluctuates within 0.5 pm over a period of 50 h.
{"title":"Frequency-stable nanophotonic microcavities via integrated thermometry","authors":"Sai Kanth Dacha, Yun Zhao, Karl J. McNulty, Gaurang R. Bhatt, Michal Lipson, Alexander L. Gaeta","doi":"10.1038/s41566-025-01789-9","DOIUrl":"10.1038/s41566-025-01789-9","url":null,"abstract":"Field-deployable integrated photonic devices co-packaged with electronics will enable important applications such as optical interconnects, quantum information processing, precision measurements, spectroscopy and microwave generation. Significant progress has been made over the past two decades on increasing the functional complexity of photonic chips. However, a critical challenge that remains is the lack of scalable techniques to overcome thermal perturbations arising from the environment and co-packaged electronics. Here we demonstrate a fully integrated scheme to monitor and stabilize the temperature of a high-Q microresonator on a Si-based chip, which can serve as a photonic frequency reference. Our approach relies on a thin-film metallic resistor placed directly above the microcavity, acting as an integrated resistance thermometer, enabling unique mapping of the cavity’s absolute resonance wavelength to the thermometer’s electrical resistance. Following a one-time calibration, the microresonator can be accurately and repeatably tuned to any desired absolute resonance wavelength using thermometry alone with a root-mean-squared wavelength error of <0.8 pm over a time span of days. We frequency-lock a distributed feedback laser to the microresonator and demonstrate a 48× reduction in its frequency drift, resulting in its centre wavelength staying within ±0.5 pm of the mean over a duration of 50 h in the presence of substantial ambient fluctuations, outperforming many commercial distributed feedback and wavelength-locker-based laser systems. Finally, we stabilize a soliton mode-locked Kerr comb without the need for photodetection, paving the way for Kerr-comb-based photonic devices that can potentially operate in the desired mode-locked state indefinitely. Integrating a thin-film resistance thermometer above a high-Q SiN microresonator enables local temperature monitoring and active stabilization of its resonance wavelength. The emission wavelength of a distributed feedback laser locked to the microresonator fluctuates within 0.5 pm over a period of 50 h.","PeriodicalId":18926,"journal":{"name":"Nature Photonics","volume":"20 1","pages":"71-78"},"PeriodicalIF":32.9,"publicationDate":"2025-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.comhttps://www.nature.com/articles/s41566-025-01789-9.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145427670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-03DOI: 10.1038/s41566-025-01777-z
Eran Lustig, Melissa A. Guidry, Daniil M. Lukin, Shanhui Fan, Jelena Vučković
The study of coupled networks with parametric amplification of vacuum fluctuations has garnered increasing interest due to its intricate physics and potential applications. In these systems, parametric interactions lead to beam-splitter coupling and two-mode squeezing, creating quadrature-dependent dynamics. These systems can be modelled as bosonic networks, arrays or lattices, exhibiting exotic effects such as unidirectional amplification and non-Hermitian chiral transport that influence multimode squeezing. However, exploring and controlling these network dynamics experimentally in all-optical systems remains challenging. Recent advances in integrated nonlinear microresonators, known as Kerr microcombs, have enabled the generation and control of broadband high-repetition pulses on microchips. Kerr microcombs exhibit intriguing nonlinear dynamics where coherent photons occupy discrete spectral lines, leading to multimode squeezed vacuum states. Here we explore the lattice dynamics of vacuum fluctuations driven by dissipative Kerr microcombs. We design a photonic chip on which a spontaneously emergent pair of pulses creates extended multimode states of parametrically amplified vacuum fluctuations. These states exhibit oscillatory dynamics, with implications for squeezing and secondary comb formation. By employing integrated micro-heaters, we tune the vacuum fluctuations to eliminate the oscillations, establishing a fundamental connection between non-Hermitian lattice symmetries and Kerr combs, and paving the way for exotic quadrature-dependent optical networks with broad implications for quantum and classical photonic technologies. The quantum noise of Kerr combs is found to exhibit oscillatory lattice dynamics through state transitions, with implications for squeezing and comb formation.
{"title":"Quadrature-dependent lattice dynamics of dissipative microcombs","authors":"Eran Lustig, Melissa A. Guidry, Daniil M. Lukin, Shanhui Fan, Jelena Vučković","doi":"10.1038/s41566-025-01777-z","DOIUrl":"10.1038/s41566-025-01777-z","url":null,"abstract":"The study of coupled networks with parametric amplification of vacuum fluctuations has garnered increasing interest due to its intricate physics and potential applications. In these systems, parametric interactions lead to beam-splitter coupling and two-mode squeezing, creating quadrature-dependent dynamics. These systems can be modelled as bosonic networks, arrays or lattices, exhibiting exotic effects such as unidirectional amplification and non-Hermitian chiral transport that influence multimode squeezing. However, exploring and controlling these network dynamics experimentally in all-optical systems remains challenging. Recent advances in integrated nonlinear microresonators, known as Kerr microcombs, have enabled the generation and control of broadband high-repetition pulses on microchips. Kerr microcombs exhibit intriguing nonlinear dynamics where coherent photons occupy discrete spectral lines, leading to multimode squeezed vacuum states. Here we explore the lattice dynamics of vacuum fluctuations driven by dissipative Kerr microcombs. We design a photonic chip on which a spontaneously emergent pair of pulses creates extended multimode states of parametrically amplified vacuum fluctuations. These states exhibit oscillatory dynamics, with implications for squeezing and secondary comb formation. By employing integrated micro-heaters, we tune the vacuum fluctuations to eliminate the oscillations, establishing a fundamental connection between non-Hermitian lattice symmetries and Kerr combs, and paving the way for exotic quadrature-dependent optical networks with broad implications for quantum and classical photonic technologies. The quantum noise of Kerr combs is found to exhibit oscillatory lattice dynamics through state transitions, with implications for squeezing and comb formation.","PeriodicalId":18926,"journal":{"name":"Nature Photonics","volume":"19 11","pages":"1247-1254"},"PeriodicalIF":32.9,"publicationDate":"2025-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145427668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-03DOI: 10.1038/s41566-025-01759-1
Vincenzo Pecunia, Thomas D. Anthopoulos, Ardalan Armin, Benjamin Bouthinon, Mario Caironi, Andres Castellanos-Gomez, Yongsheng Chen, Kilwon Cho, Charlotte Clegg, Xiaosheng Fang, Peter Fendel, Boyd Fowler, Gerwin Gelinck, Heinrich Gottlob, Philippe Guyot-Sionnest, Rob Hannebauer, Gerardo Hernandez-Sosa, Mark C. Hersam, Lionel Hirsch, Johnny C. Ho, Furkan H. Isikgor, Jérôme Joimel, Hyun Jae Kim, Gerasimos Konstantatos, John Labram, Max C. Lemme, Karl Leo, Emmanuel Lhuillier, Elefterios Lidorikis, Maria A. Loi, Pawel E. Malinowski, Patrick Merken, Thomas Mueller, Bahareh Nasrollahi, Dario Natali, Tse Nga Ng, Thuc-Quyen Nguyen, Sung Kyu Park, Lian-Mao Peng, Paolo Samorì, Edward H. Sargent, Liang Shen, Sanshiro Shishido, Ivan Shorubalko, Prashant Sonar, Samuel D. Stranks, Sandro F. Tedde, Koen Vandewal, Marc Verhaegen, Sumeet Walia, Feng Yan, Tomoyuki Yokota, Fujun Zhang
Photodetector technologies based on emerging semiconductors—for example, organic semiconductors, halide perovskites, quantum dots, low-dimensional semiconductors and metal oxides—hold considerable promise for next-generation optoelectronics. However, the breadth and multidisciplinarity of this field, alongside its diverse range of applications, have resulted in inconsistent performance characterization and reporting practices, hindering the effective benchmarking of these technologies. Here we present a consensus among researchers from academia and industry on accurately capturing the key performance metrics of photodetectors based on emerging semiconductors and utilizing the photoelectric effect. We analyse their underlying assumptions, discuss common misunderstandings, and provide guidelines for accurate characterization and reporting. Additionally, we discuss the benchmarking of these photodetector technologies with respect to diverse applications. We expect that these comprehensive guidelines for characterization, reporting and benchmarking will accelerate and streamline further advancements in the field, propelling emerging photodetector technologies towards their full potential. This Consensus Statement discusses common misunderstandings about photodetector performance characterization and reporting, and offers recommendations for standardized practices.
{"title":"Guidelines for accurate evaluation of photodetectors based on emerging semiconductor technologies","authors":"Vincenzo Pecunia, Thomas D. Anthopoulos, Ardalan Armin, Benjamin Bouthinon, Mario Caironi, Andres Castellanos-Gomez, Yongsheng Chen, Kilwon Cho, Charlotte Clegg, Xiaosheng Fang, Peter Fendel, Boyd Fowler, Gerwin Gelinck, Heinrich Gottlob, Philippe Guyot-Sionnest, Rob Hannebauer, Gerardo Hernandez-Sosa, Mark C. Hersam, Lionel Hirsch, Johnny C. Ho, Furkan H. Isikgor, Jérôme Joimel, Hyun Jae Kim, Gerasimos Konstantatos, John Labram, Max C. Lemme, Karl Leo, Emmanuel Lhuillier, Elefterios Lidorikis, Maria A. Loi, Pawel E. Malinowski, Patrick Merken, Thomas Mueller, Bahareh Nasrollahi, Dario Natali, Tse Nga Ng, Thuc-Quyen Nguyen, Sung Kyu Park, Lian-Mao Peng, Paolo Samorì, Edward H. Sargent, Liang Shen, Sanshiro Shishido, Ivan Shorubalko, Prashant Sonar, Samuel D. Stranks, Sandro F. Tedde, Koen Vandewal, Marc Verhaegen, Sumeet Walia, Feng Yan, Tomoyuki Yokota, Fujun Zhang","doi":"10.1038/s41566-025-01759-1","DOIUrl":"10.1038/s41566-025-01759-1","url":null,"abstract":"Photodetector technologies based on emerging semiconductors—for example, organic semiconductors, halide perovskites, quantum dots, low-dimensional semiconductors and metal oxides—hold considerable promise for next-generation optoelectronics. However, the breadth and multidisciplinarity of this field, alongside its diverse range of applications, have resulted in inconsistent performance characterization and reporting practices, hindering the effective benchmarking of these technologies. Here we present a consensus among researchers from academia and industry on accurately capturing the key performance metrics of photodetectors based on emerging semiconductors and utilizing the photoelectric effect. We analyse their underlying assumptions, discuss common misunderstandings, and provide guidelines for accurate characterization and reporting. Additionally, we discuss the benchmarking of these photodetector technologies with respect to diverse applications. We expect that these comprehensive guidelines for characterization, reporting and benchmarking will accelerate and streamline further advancements in the field, propelling emerging photodetector technologies towards their full potential. This Consensus Statement discusses common misunderstandings about photodetector performance characterization and reporting, and offers recommendations for standardized practices.","PeriodicalId":18926,"journal":{"name":"Nature Photonics","volume":"19 11","pages":"1178-1188"},"PeriodicalIF":32.9,"publicationDate":"2025-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.comhttps://www.nature.com/articles/s41566-025-01759-1.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145434506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-03DOI: 10.1038/s41566-025-01796-w
Characterizing and reporting photodetector performance demands common standards to ensure rigorous, reproducible and comparable practices.
描述和报告光电探测器的性能需要共同的标准，以确保严格、可重复和可比较的做法。
{"title":"Setting the standard for photodetectors","authors":"","doi":"10.1038/s41566-025-01796-w","DOIUrl":"10.1038/s41566-025-01796-w","url":null,"abstract":"Characterizing and reporting photodetector performance demands common standards to ensure rigorous, reproducible and comparable practices.","PeriodicalId":18926,"journal":{"name":"Nature Photonics","volume":"19 11","pages":"1157-1157"},"PeriodicalIF":32.9,"publicationDate":"2025-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.comhttps://www.nature.com/articles/s41566-025-01796-w.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145434508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-03DOI: 10.1038/s41566-025-01771-5
Marin Soljačić, Shanhui Fan, Michelle L. Povinelli
John ‘JJ’ Joannopoulos, a pioneering condensed-matter theorist who contributed to the launch of modern nanophotonics and mentored a plethora of scientists and engineers, passed away on 17 August 2025, aged 78. In his five decades at MIT, JJ combined first-principles insights with a gift for nurturing people, shaping fields from ab initio materials theory to photonic crystals and their applications.
{"title":"John Joannopoulos (1947–2025)","authors":"Marin Soljačić, Shanhui Fan, Michelle L. Povinelli","doi":"10.1038/s41566-025-01771-5","DOIUrl":"10.1038/s41566-025-01771-5","url":null,"abstract":"John ‘JJ’ Joannopoulos, a pioneering condensed-matter theorist who contributed to the launch of modern nanophotonics and mentored a plethora of scientists and engineers, passed away on 17 August 2025, aged 78. In his five decades at MIT, JJ combined first-principles insights with a gift for nurturing people, shaping fields from ab initio materials theory to photonic crystals and their applications.","PeriodicalId":18926,"journal":{"name":"Nature Photonics","volume":"19 11","pages":"1158-1159"},"PeriodicalIF":32.9,"publicationDate":"2025-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145434509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-03DOI: 10.1038/s41566-025-01774-2
Md Selim Habib, Rodrigo Amezcua Correa
A hollow-core optical fibre which surpasses silica fibre’s long-standing limits and provides an attenuation below 0.1 dB/km across a record-wide bandwidth, could yield more energy-efficient communications with lower latency and higher data capacity.
{"title":"Hollow-core breakthrough","authors":"Md Selim Habib, Rodrigo Amezcua Correa","doi":"10.1038/s41566-025-01774-2","DOIUrl":"10.1038/s41566-025-01774-2","url":null,"abstract":"A hollow-core optical fibre which surpasses silica fibre’s long-standing limits and provides an attenuation below 0.1 dB/km across a record-wide bandwidth, could yield more energy-efficient communications with lower latency and higher data capacity.","PeriodicalId":18926,"journal":{"name":"Nature Photonics","volume":"19 11","pages":"1160-1161"},"PeriodicalIF":32.9,"publicationDate":"2025-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145434505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-03DOI: 10.1038/s41566-025-01790-2
Xiaozhen Wei, Kai Zhang, Haining Chen, Weibiao Zhong, Qifeng Lin, Xianzhen Huang, Chunyu Lv, Yujiang Du, Huicong Liu, Guangtong Hai, Cheng Zhu, Weiping Li, Yang Bai, Shihe Yang
The operational stability of perovskite solar modules (PSMs) is inferior to that of smaller-sized devices, posing a critical challenge to advance their practical applications. Printable carbon electrodes are highly stable and cost-effective, representing a promising strategy to address the stability issue when used as rear contacts in fully printable PSMs. However, the power conversion efficiency (PCE) of carbon-electrode PSMs still lags behind their metal-electrode counterparts. Here we develop a scalable vapour post-treatment process based on molecules with small sizes and low boiling point that effectively minimize non-radiative recombination and facilitate charge extraction. We demonstrate fully printed carbon-electrode PSMs with about 50 cm2 of active area and a PCE of 20.41% (19.26% certified). Our strategy significantly improves the stability of modules, with negligible PCE decay after tracking at the maximum power point for 1,020 h under 1-sun illumination at 65 °C. The unencapsulated carbon-electrode PSMs retain over 84% of the initial PCE under the damp heat test (85 °C and 85% relative humidity) for 2,280 h. We believe our treatment strategy will sustain the development of carbon-electrode PSMs towards commercial upscaling. A vapour post-treatment strategy enables fully printed carbon-electrode perovskite solar modules with an area of about 50 cm2 and a certified power conversion efficiency of 19.26%. The modules show no performance decay after 1,000 h of continuous operation at 65 °C.
{"title":"Vapour-assisted surface treatment for highly stable fully printed carbon-electrode perovskite solar modules","authors":"Xiaozhen Wei, Kai Zhang, Haining Chen, Weibiao Zhong, Qifeng Lin, Xianzhen Huang, Chunyu Lv, Yujiang Du, Huicong Liu, Guangtong Hai, Cheng Zhu, Weiping Li, Yang Bai, Shihe Yang","doi":"10.1038/s41566-025-01790-2","DOIUrl":"10.1038/s41566-025-01790-2","url":null,"abstract":"The operational stability of perovskite solar modules (PSMs) is inferior to that of smaller-sized devices, posing a critical challenge to advance their practical applications. Printable carbon electrodes are highly stable and cost-effective, representing a promising strategy to address the stability issue when used as rear contacts in fully printable PSMs. However, the power conversion efficiency (PCE) of carbon-electrode PSMs still lags behind their metal-electrode counterparts. Here we develop a scalable vapour post-treatment process based on molecules with small sizes and low boiling point that effectively minimize non-radiative recombination and facilitate charge extraction. We demonstrate fully printed carbon-electrode PSMs with about 50 cm2 of active area and a PCE of 20.41% (19.26% certified). Our strategy significantly improves the stability of modules, with negligible PCE decay after tracking at the maximum power point for 1,020 h under 1-sun illumination at 65 °C. The unencapsulated carbon-electrode PSMs retain over 84% of the initial PCE under the damp heat test (85 °C and 85% relative humidity) for 2,280 h. We believe our treatment strategy will sustain the development of carbon-electrode PSMs towards commercial upscaling. A vapour post-treatment strategy enables fully printed carbon-electrode perovskite solar modules with an area of about 50 cm2 and a certified power conversion efficiency of 19.26%. The modules show no performance decay after 1,000 h of continuous operation at 65 °C.","PeriodicalId":18926,"journal":{"name":"Nature Photonics","volume":"20 2","pages":"170-177"},"PeriodicalIF":32.9,"publicationDate":"2025-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145427673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Miniaturization of light-emitting diodes below the diffraction limit of the emission wavelength can enable super-resolution imaging and on-chip light sources for ultrabroadband chiplet communication. Organic light-emitting diodes, although suitable for miniaturization due to their emission from localized excitons, suffer from the limited compatibility of organic materials with traditional photolithographic patterning. Here we develop a method for the scalable fabrication of nanoscale organic light-emitting diodes with pixel densities up to 100,000 pixels per inch, periodicity of 250 nm and the smallest pixel size in the order of 100 nm. We realize the direct nanoscale patterning of organic semiconductors by self-aligned nanostencil etching and lithography. The process is resist-free and involves etching and evaporation through nanoapertures in a free-standing film adhering to the substrate. A nanoscale organic light-emitting diode surface with over 1 megapixel exhibits an average external quantum efficiency of 13.1%. We also demonstrate electroluminescent metasurfaces with subwavelength-scale meta-atoms that can electrically modulate the emitted light. The diffractive coupling between nanopixels enables control over the far-field emission properties of light, including directionality and polarization. These results pave the way for hybrid integrated photonics technologies, including visible-light communication, lasing and high-resolution displays. Nanostencil etching and lithography enable the fabrication of green-emitting nanoscale organic light-emitting diode pixels with size as small as 100 nm, densities as high as 100,000 pixels per inch and average external quantum efficiency of 13.1% for green emission.
{"title":"Scalable nanopatterning of organic light-emitting diodes beyond the diffraction limit","authors":"Tommaso Marcato, Jiwoo Oh, Zhan-Hong Lin, Tian Tian, Abhijit Gogoi, Sunil B. Shivarudraiah, Sudhir Kumar, Ananth Govind Rajan, Shuangshuang Zeng, Chih-Jen Shih","doi":"10.1038/s41566-025-01785-z","DOIUrl":"10.1038/s41566-025-01785-z","url":null,"abstract":"Miniaturization of light-emitting diodes below the diffraction limit of the emission wavelength can enable super-resolution imaging and on-chip light sources for ultrabroadband chiplet communication. Organic light-emitting diodes, although suitable for miniaturization due to their emission from localized excitons, suffer from the limited compatibility of organic materials with traditional photolithographic patterning. Here we develop a method for the scalable fabrication of nanoscale organic light-emitting diodes with pixel densities up to 100,000 pixels per inch, periodicity of 250 nm and the smallest pixel size in the order of 100 nm. We realize the direct nanoscale patterning of organic semiconductors by self-aligned nanostencil etching and lithography. The process is resist-free and involves etching and evaporation through nanoapertures in a free-standing film adhering to the substrate. A nanoscale organic light-emitting diode surface with over 1 megapixel exhibits an average external quantum efficiency of 13.1%. We also demonstrate electroluminescent metasurfaces with subwavelength-scale meta-atoms that can electrically modulate the emitted light. The diffractive coupling between nanopixels enables control over the far-field emission properties of light, including directionality and polarization. These results pave the way for hybrid integrated photonics technologies, including visible-light communication, lasing and high-resolution displays. Nanostencil etching and lithography enable the fabrication of green-emitting nanoscale organic light-emitting diode pixels with size as small as 100 nm, densities as high as 100,000 pixels per inch and average external quantum efficiency of 13.1% for green emission.","PeriodicalId":18926,"journal":{"name":"Nature Photonics","volume":"20 1","pages":"31-39"},"PeriodicalIF":32.9,"publicationDate":"2025-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.comhttps://www.nature.com/articles/s41566-025-01785-z.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145404754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-27DOI: 10.1038/s41566-025-01781-3
Zhi Hao Peng, Michele Cotrufo, Ding Xu, Sander A. Mann, Siyuan Qiu, D. N. Basov, Milan Delor, Andrea Alú, P. James Schuck, Chiara Trovatello
Monolayer transition metal dichalcogenides are van der Waals semiconductors that exhibit exceptionally high second-order nonlinear susceptibilities χ(2) = 100–1,000 pm V−1, but limited conversion efficiency $$propto {[{chi }^{(2)}]}^{2}{z}^{2} approx 1{0}^{-10}$$ , due to their atomic thickness z. Contrary to the naturally occurring hexagonal crystal phase, which possesses inversion symmetry in samples with an even number of layers, the non-centrosymmetric rhombohedral phase (3R) enables much larger second-order nonlinear signals in bulk samples. However, at increased thicknesses (~200 nm), phase mismatch becomes relevant, limiting the maximum efficiency to ~10−6. Quasi-phase-matched 3R-MoS2 stacks have recently pushed conversion efficiencies beyond 10−4 (0.01%), over thicknesses of a few micrometres. Here we bypass phase-matching constraints by patterning subwavelength 3R-MoS2 flakes to realize non-local optical resonances, characterized by a field profile that is highly localized along the transverse direction but largely delocalized in the metasurface plane. By leveraging the large field confinement and high quality factors offered by our metasurface design, we are able to achieve two orders of magnitude (140×) second-harmonic generation enhancement compared with unpatterned 3R-MoS2 flakes with the same thickness, enabling single-pass second-harmonic conversion efficiencies of ~10−4 over only 160-nm-thick metastructures at relevant telecom wavelengths. This work opens new pathways towards the realization of efficient, on-chip-integrable nonlinear devices with compact footprints based on layered semiconductors, particularly relevant for integrated photonic circuitry and with potential applications in the field of quantum photonics. Exploiting non-local optical resonances on 3R-MoS2 flakes, researchers demonstrate single-pass second-harmonic conversion efficiencies of ~10−4 over only 160-nm-thick van der Waals nonlinear metastructures at telecom wavelengths.
单层过渡金属二硫族化合物是范德华半导体，具有异常高的二阶非线性磁化率χ(2) = 100-1,000 pm V−1，但由于其原子厚度z，转换效率有限$$propto {[{chi }^{(2)}]}^{2}{z}^{2} approx 1{0}^{-10}$$。与自然发生的六方晶体相相反，在具有偶数层的样品中具有反转对称性。非中心对称的菱形相位（3R）可以在大块样品中产生更大的二阶非线性信号。然而，当厚度增加（200nm）时，相位失配变得相关，将最大效率限制在10−6。准相位匹配的3R-MoS2堆叠最近将转换效率提高到10−4（0.01）以上%), over thicknesses of a few micrometres. Here we bypass phase-matching constraints by patterning subwavelength 3R-MoS2 flakes to realize non-local optical resonances, characterized by a field profile that is highly localized along the transverse direction but largely delocalized in the metasurface plane. By leveraging the large field confinement and high quality factors offered by our metasurface design, we are able to achieve two orders of magnitude (140×) second-harmonic generation enhancement compared with unpatterned 3R-MoS2 flakes with the same thickness, enabling single-pass second-harmonic conversion efficiencies of ~10−4 over only 160-nm-thick metastructures at relevant telecom wavelengths. This work opens new pathways towards the realization of efficient, on-chip-integrable nonlinear devices with compact footprints based on layered semiconductors, particularly relevant for integrated photonic circuitry and with potential applications in the field of quantum photonics. Exploiting non-local optical resonances on 3R-MoS2 flakes, researchers demonstrate single-pass second-harmonic conversion efficiencies of ~10−4 over only 160-nm-thick van der Waals nonlinear metastructures at telecom wavelengths.
{"title":"3R-stacked transition metal dichalcogenide non-local metasurface for efficient second-harmonic generation","authors":"Zhi Hao Peng, Michele Cotrufo, Ding Xu, Sander A. Mann, Siyuan Qiu, D. N. Basov, Milan Delor, Andrea Alú, P. James Schuck, Chiara Trovatello","doi":"10.1038/s41566-025-01781-3","DOIUrl":"10.1038/s41566-025-01781-3","url":null,"abstract":"Monolayer transition metal dichalcogenides are van der Waals semiconductors that exhibit exceptionally high second-order nonlinear susceptibilities χ(2) = 100–1,000 pm V−1, but limited conversion efficiency $$propto {[{chi }^{(2)}]}^{2}{z}^{2} approx 1{0}^{-10}$$ , due to their atomic thickness z. Contrary to the naturally occurring hexagonal crystal phase, which possesses inversion symmetry in samples with an even number of layers, the non-centrosymmetric rhombohedral phase (3R) enables much larger second-order nonlinear signals in bulk samples. However, at increased thicknesses (~200 nm), phase mismatch becomes relevant, limiting the maximum efficiency to ~10−6. Quasi-phase-matched 3R-MoS2 stacks have recently pushed conversion efficiencies beyond 10−4 (0.01%), over thicknesses of a few micrometres. Here we bypass phase-matching constraints by patterning subwavelength 3R-MoS2 flakes to realize non-local optical resonances, characterized by a field profile that is highly localized along the transverse direction but largely delocalized in the metasurface plane. By leveraging the large field confinement and high quality factors offered by our metasurface design, we are able to achieve two orders of magnitude (140×) second-harmonic generation enhancement compared with unpatterned 3R-MoS2 flakes with the same thickness, enabling single-pass second-harmonic conversion efficiencies of ~10−4 over only 160-nm-thick metastructures at relevant telecom wavelengths. This work opens new pathways towards the realization of efficient, on-chip-integrable nonlinear devices with compact footprints based on layered semiconductors, particularly relevant for integrated photonic circuitry and with potential applications in the field of quantum photonics. Exploiting non-local optical resonances on 3R-MoS2 flakes, researchers demonstrate single-pass second-harmonic conversion efficiencies of ~10−4 over only 160-nm-thick van der Waals nonlinear metastructures at telecom wavelengths.","PeriodicalId":18926,"journal":{"name":"Nature Photonics","volume":"19 12","pages":"1376-1384"},"PeriodicalIF":32.9,"publicationDate":"2025-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145382066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：