Pub Date : 2025-11-03DOI: 10.1038/s41566-025-01759-1
Vincenzo Pecunia, Thomas D. Anthopoulos, Ardalan Armin, Benjamin Bouthinon, Mario Caironi, Andres Castellanos-Gomez, Yongsheng Chen, Kilwon Cho, Charlotte Clegg, Xiaosheng Fang, Peter Fendel, Boyd Fowler, Gerwin Gelinck, Heinrich Gottlob, Philippe Guyot-Sionnest, Rob Hannebauer, Gerardo Hernandez-Sosa, Mark C. Hersam, Lionel Hirsch, Johnny C. Ho, Furkan H. Isikgor, Jérôme Joimel, Hyun Jae Kim, Gerasimos Konstantatos, John Labram, Max C. Lemme, Karl Leo, Emmanuel Lhuillier, Elefterios Lidorikis, Maria A. Loi, Pawel E. Malinowski, Patrick Merken, Thomas Mueller, Bahareh Nasrollahi, Dario Natali, Tse Nga Ng, Thuc-Quyen Nguyen, Sung Kyu Park, Lian-Mao Peng, Paolo Samorì, Edward H. Sargent, Liang Shen, Sanshiro Shishido, Ivan Shorubalko, Prashant Sonar, Samuel D. Stranks, Sandro F. Tedde, Koen Vandewal, Marc Verhaegen, Sumeet Walia, Feng Yan, Tomoyuki Yokota, Fujun Zhang
Photodetector technologies based on emerging semiconductors—for example, organic semiconductors, halide perovskites, quantum dots, low-dimensional semiconductors and metal oxides—hold considerable promise for next-generation optoelectronics. However, the breadth and multidisciplinarity of this field, alongside its diverse range of applications, have resulted in inconsistent performance characterization and reporting practices, hindering the effective benchmarking of these technologies. Here we present a consensus among researchers from academia and industry on accurately capturing the key performance metrics of photodetectors based on emerging semiconductors and utilizing the photoelectric effect. We analyse their underlying assumptions, discuss common misunderstandings, and provide guidelines for accurate characterization and reporting. Additionally, we discuss the benchmarking of these photodetector technologies with respect to diverse applications. We expect that these comprehensive guidelines for characterization, reporting and benchmarking will accelerate and streamline further advancements in the field, propelling emerging photodetector technologies towards their full potential. This Consensus Statement discusses common misunderstandings about photodetector performance characterization and reporting, and offers recommendations for standardized practices.
{"title":"Guidelines for accurate evaluation of photodetectors based on emerging semiconductor technologies","authors":"Vincenzo Pecunia, Thomas D. Anthopoulos, Ardalan Armin, Benjamin Bouthinon, Mario Caironi, Andres Castellanos-Gomez, Yongsheng Chen, Kilwon Cho, Charlotte Clegg, Xiaosheng Fang, Peter Fendel, Boyd Fowler, Gerwin Gelinck, Heinrich Gottlob, Philippe Guyot-Sionnest, Rob Hannebauer, Gerardo Hernandez-Sosa, Mark C. Hersam, Lionel Hirsch, Johnny C. Ho, Furkan H. Isikgor, Jérôme Joimel, Hyun Jae Kim, Gerasimos Konstantatos, John Labram, Max C. Lemme, Karl Leo, Emmanuel Lhuillier, Elefterios Lidorikis, Maria A. Loi, Pawel E. Malinowski, Patrick Merken, Thomas Mueller, Bahareh Nasrollahi, Dario Natali, Tse Nga Ng, Thuc-Quyen Nguyen, Sung Kyu Park, Lian-Mao Peng, Paolo Samorì, Edward H. Sargent, Liang Shen, Sanshiro Shishido, Ivan Shorubalko, Prashant Sonar, Samuel D. Stranks, Sandro F. Tedde, Koen Vandewal, Marc Verhaegen, Sumeet Walia, Feng Yan, Tomoyuki Yokota, Fujun Zhang","doi":"10.1038/s41566-025-01759-1","DOIUrl":"10.1038/s41566-025-01759-1","url":null,"abstract":"Photodetector technologies based on emerging semiconductors—for example, organic semiconductors, halide perovskites, quantum dots, low-dimensional semiconductors and metal oxides—hold considerable promise for next-generation optoelectronics. However, the breadth and multidisciplinarity of this field, alongside its diverse range of applications, have resulted in inconsistent performance characterization and reporting practices, hindering the effective benchmarking of these technologies. Here we present a consensus among researchers from academia and industry on accurately capturing the key performance metrics of photodetectors based on emerging semiconductors and utilizing the photoelectric effect. We analyse their underlying assumptions, discuss common misunderstandings, and provide guidelines for accurate characterization and reporting. Additionally, we discuss the benchmarking of these photodetector technologies with respect to diverse applications. We expect that these comprehensive guidelines for characterization, reporting and benchmarking will accelerate and streamline further advancements in the field, propelling emerging photodetector technologies towards their full potential. This Consensus Statement discusses common misunderstandings about photodetector performance characterization and reporting, and offers recommendations for standardized practices.","PeriodicalId":18926,"journal":{"name":"Nature Photonics","volume":"19 11","pages":"1178-1188"},"PeriodicalIF":32.9,"publicationDate":"2025-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.comhttps://www.nature.com/articles/s41566-025-01759-1.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145434506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-03DOI: 10.1038/s41566-025-01796-w
Characterizing and reporting photodetector performance demands common standards to ensure rigorous, reproducible and comparable practices.
描述和报告光电探测器的性能需要共同的标准，以确保严格、可重复和可比较的做法。
{"title":"Setting the standard for photodetectors","authors":"","doi":"10.1038/s41566-025-01796-w","DOIUrl":"10.1038/s41566-025-01796-w","url":null,"abstract":"Characterizing and reporting photodetector performance demands common standards to ensure rigorous, reproducible and comparable practices.","PeriodicalId":18926,"journal":{"name":"Nature Photonics","volume":"19 11","pages":"1157-1157"},"PeriodicalIF":32.9,"publicationDate":"2025-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.comhttps://www.nature.com/articles/s41566-025-01796-w.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145434508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-03DOI: 10.1038/s41566-025-01771-5
Marin Soljačić, Shanhui Fan, Michelle L. Povinelli
John ‘JJ’ Joannopoulos, a pioneering condensed-matter theorist who contributed to the launch of modern nanophotonics and mentored a plethora of scientists and engineers, passed away on 17 August 2025, aged 78. In his five decades at MIT, JJ combined first-principles insights with a gift for nurturing people, shaping fields from ab initio materials theory to photonic crystals and their applications.
{"title":"John Joannopoulos (1947–2025)","authors":"Marin Soljačić, Shanhui Fan, Michelle L. Povinelli","doi":"10.1038/s41566-025-01771-5","DOIUrl":"10.1038/s41566-025-01771-5","url":null,"abstract":"John ‘JJ’ Joannopoulos, a pioneering condensed-matter theorist who contributed to the launch of modern nanophotonics and mentored a plethora of scientists and engineers, passed away on 17 August 2025, aged 78. In his five decades at MIT, JJ combined first-principles insights with a gift for nurturing people, shaping fields from ab initio materials theory to photonic crystals and their applications.","PeriodicalId":18926,"journal":{"name":"Nature Photonics","volume":"19 11","pages":"1158-1159"},"PeriodicalIF":32.9,"publicationDate":"2025-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145434509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-03DOI: 10.1038/s41566-025-01774-2
Md Selim Habib, Rodrigo Amezcua Correa
A hollow-core optical fibre which surpasses silica fibre’s long-standing limits and provides an attenuation below 0.1 dB/km across a record-wide bandwidth, could yield more energy-efficient communications with lower latency and higher data capacity.
{"title":"Hollow-core breakthrough","authors":"Md Selim Habib, Rodrigo Amezcua Correa","doi":"10.1038/s41566-025-01774-2","DOIUrl":"10.1038/s41566-025-01774-2","url":null,"abstract":"A hollow-core optical fibre which surpasses silica fibre’s long-standing limits and provides an attenuation below 0.1 dB/km across a record-wide bandwidth, could yield more energy-efficient communications with lower latency and higher data capacity.","PeriodicalId":18926,"journal":{"name":"Nature Photonics","volume":"19 11","pages":"1160-1161"},"PeriodicalIF":32.9,"publicationDate":"2025-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145434505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-03DOI: 10.1038/s41566-025-01790-2
Xiaozhen Wei, Kai Zhang, Haining Chen, Weibiao Zhong, Qifeng Lin, Xianzhen Huang, Chunyu Lv, Yujiang Du, Huicong Liu, Guangtong Hai, Cheng Zhu, Weiping Li, Yang Bai, Shihe Yang
The operational stability of perovskite solar modules (PSMs) is inferior to that of smaller-sized devices, posing a critical challenge to advance their practical applications. Printable carbon electrodes are highly stable and cost-effective, representing a promising strategy to address the stability issue when used as rear contacts in fully printable PSMs. However, the power conversion efficiency (PCE) of carbon-electrode PSMs still lags behind their metal-electrode counterparts. Here we develop a scalable vapour post-treatment process based on molecules with small sizes and low boiling point that effectively minimize non-radiative recombination and facilitate charge extraction. We demonstrate fully printed carbon-electrode PSMs with about 50 cm2 of active area and a PCE of 20.41% (19.26% certified). Our strategy significantly improves the stability of modules, with negligible PCE decay after tracking at the maximum power point for 1,020 h under 1-sun illumination at 65 °C. The unencapsulated carbon-electrode PSMs retain over 84% of the initial PCE under the damp heat test (85 °C and 85% relative humidity) for 2,280 h. We believe our treatment strategy will sustain the development of carbon-electrode PSMs towards commercial upscaling. A vapour post-treatment strategy enables fully printed carbon-electrode perovskite solar modules with an area of about 50 cm2 and a certified power conversion efficiency of 19.26%. The modules show no performance decay after 1,000 h of continuous operation at 65 °C.
{"title":"Vapour-assisted surface treatment for highly stable fully printed carbon-electrode perovskite solar modules","authors":"Xiaozhen Wei, Kai Zhang, Haining Chen, Weibiao Zhong, Qifeng Lin, Xianzhen Huang, Chunyu Lv, Yujiang Du, Huicong Liu, Guangtong Hai, Cheng Zhu, Weiping Li, Yang Bai, Shihe Yang","doi":"10.1038/s41566-025-01790-2","DOIUrl":"10.1038/s41566-025-01790-2","url":null,"abstract":"The operational stability of perovskite solar modules (PSMs) is inferior to that of smaller-sized devices, posing a critical challenge to advance their practical applications. Printable carbon electrodes are highly stable and cost-effective, representing a promising strategy to address the stability issue when used as rear contacts in fully printable PSMs. However, the power conversion efficiency (PCE) of carbon-electrode PSMs still lags behind their metal-electrode counterparts. Here we develop a scalable vapour post-treatment process based on molecules with small sizes and low boiling point that effectively minimize non-radiative recombination and facilitate charge extraction. We demonstrate fully printed carbon-electrode PSMs with about 50 cm2 of active area and a PCE of 20.41% (19.26% certified). Our strategy significantly improves the stability of modules, with negligible PCE decay after tracking at the maximum power point for 1,020 h under 1-sun illumination at 65 °C. The unencapsulated carbon-electrode PSMs retain over 84% of the initial PCE under the damp heat test (85 °C and 85% relative humidity) for 2,280 h. We believe our treatment strategy will sustain the development of carbon-electrode PSMs towards commercial upscaling. A vapour post-treatment strategy enables fully printed carbon-electrode perovskite solar modules with an area of about 50 cm2 and a certified power conversion efficiency of 19.26%. The modules show no performance decay after 1,000 h of continuous operation at 65 °C.","PeriodicalId":18926,"journal":{"name":"Nature Photonics","volume":"20 2","pages":"170-177"},"PeriodicalIF":32.9,"publicationDate":"2025-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145427673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Miniaturization of light-emitting diodes below the diffraction limit of the emission wavelength can enable super-resolution imaging and on-chip light sources for ultrabroadband chiplet communication. Organic light-emitting diodes, although suitable for miniaturization due to their emission from localized excitons, suffer from the limited compatibility of organic materials with traditional photolithographic patterning. Here we develop a method for the scalable fabrication of nanoscale organic light-emitting diodes with pixel densities up to 100,000 pixels per inch, periodicity of 250 nm and the smallest pixel size in the order of 100 nm. We realize the direct nanoscale patterning of organic semiconductors by self-aligned nanostencil etching and lithography. The process is resist-free and involves etching and evaporation through nanoapertures in a free-standing film adhering to the substrate. A nanoscale organic light-emitting diode surface with over 1 megapixel exhibits an average external quantum efficiency of 13.1%. We also demonstrate electroluminescent metasurfaces with subwavelength-scale meta-atoms that can electrically modulate the emitted light. The diffractive coupling between nanopixels enables control over the far-field emission properties of light, including directionality and polarization. These results pave the way for hybrid integrated photonics technologies, including visible-light communication, lasing and high-resolution displays. Nanostencil etching and lithography enable the fabrication of green-emitting nanoscale organic light-emitting diode pixels with size as small as 100 nm, densities as high as 100,000 pixels per inch and average external quantum efficiency of 13.1% for green emission.
{"title":"Scalable nanopatterning of organic light-emitting diodes beyond the diffraction limit","authors":"Tommaso Marcato, Jiwoo Oh, Zhan-Hong Lin, Tian Tian, Abhijit Gogoi, Sunil B. Shivarudraiah, Sudhir Kumar, Ananth Govind Rajan, Shuangshuang Zeng, Chih-Jen Shih","doi":"10.1038/s41566-025-01785-z","DOIUrl":"10.1038/s41566-025-01785-z","url":null,"abstract":"Miniaturization of light-emitting diodes below the diffraction limit of the emission wavelength can enable super-resolution imaging and on-chip light sources for ultrabroadband chiplet communication. Organic light-emitting diodes, although suitable for miniaturization due to their emission from localized excitons, suffer from the limited compatibility of organic materials with traditional photolithographic patterning. Here we develop a method for the scalable fabrication of nanoscale organic light-emitting diodes with pixel densities up to 100,000 pixels per inch, periodicity of 250 nm and the smallest pixel size in the order of 100 nm. We realize the direct nanoscale patterning of organic semiconductors by self-aligned nanostencil etching and lithography. The process is resist-free and involves etching and evaporation through nanoapertures in a free-standing film adhering to the substrate. A nanoscale organic light-emitting diode surface with over 1 megapixel exhibits an average external quantum efficiency of 13.1%. We also demonstrate electroluminescent metasurfaces with subwavelength-scale meta-atoms that can electrically modulate the emitted light. The diffractive coupling between nanopixels enables control over the far-field emission properties of light, including directionality and polarization. These results pave the way for hybrid integrated photonics technologies, including visible-light communication, lasing and high-resolution displays. Nanostencil etching and lithography enable the fabrication of green-emitting nanoscale organic light-emitting diode pixels with size as small as 100 nm, densities as high as 100,000 pixels per inch and average external quantum efficiency of 13.1% for green emission.","PeriodicalId":18926,"journal":{"name":"Nature Photonics","volume":"20 1","pages":"31-39"},"PeriodicalIF":32.9,"publicationDate":"2025-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.comhttps://www.nature.com/articles/s41566-025-01785-z.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145404754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-27DOI: 10.1038/s41566-025-01781-3
Zhi Hao Peng, Michele Cotrufo, Ding Xu, Sander A. Mann, Siyuan Qiu, D. N. Basov, Milan Delor, Andrea Alú, P. James Schuck, Chiara Trovatello
Monolayer transition metal dichalcogenides are van der Waals semiconductors that exhibit exceptionally high second-order nonlinear susceptibilities χ(2) = 100–1,000 pm V−1, but limited conversion efficiency $$propto {[{chi }^{(2)}]}^{2}{z}^{2} approx 1{0}^{-10}$$ , due to their atomic thickness z. Contrary to the naturally occurring hexagonal crystal phase, which possesses inversion symmetry in samples with an even number of layers, the non-centrosymmetric rhombohedral phase (3R) enables much larger second-order nonlinear signals in bulk samples. However, at increased thicknesses (~200 nm), phase mismatch becomes relevant, limiting the maximum efficiency to ~10−6. Quasi-phase-matched 3R-MoS2 stacks have recently pushed conversion efficiencies beyond 10−4 (0.01%), over thicknesses of a few micrometres. Here we bypass phase-matching constraints by patterning subwavelength 3R-MoS2 flakes to realize non-local optical resonances, characterized by a field profile that is highly localized along the transverse direction but largely delocalized in the metasurface plane. By leveraging the large field confinement and high quality factors offered by our metasurface design, we are able to achieve two orders of magnitude (140×) second-harmonic generation enhancement compared with unpatterned 3R-MoS2 flakes with the same thickness, enabling single-pass second-harmonic conversion efficiencies of ~10−4 over only 160-nm-thick metastructures at relevant telecom wavelengths. This work opens new pathways towards the realization of efficient, on-chip-integrable nonlinear devices with compact footprints based on layered semiconductors, particularly relevant for integrated photonic circuitry and with potential applications in the field of quantum photonics. Exploiting non-local optical resonances on 3R-MoS2 flakes, researchers demonstrate single-pass second-harmonic conversion efficiencies of ~10−4 over only 160-nm-thick van der Waals nonlinear metastructures at telecom wavelengths.
单层过渡金属二硫族化合物是范德华半导体，具有异常高的二阶非线性磁化率χ(2) = 100-1,000 pm V−1，但由于其原子厚度z，转换效率有限$$propto {[{chi }^{(2)}]}^{2}{z}^{2} approx 1{0}^{-10}$$。与自然发生的六方晶体相相反，在具有偶数层的样品中具有反转对称性。非中心对称的菱形相位（3R）可以在大块样品中产生更大的二阶非线性信号。然而，当厚度增加（200nm）时，相位失配变得相关，将最大效率限制在10−6。准相位匹配的3R-MoS2堆叠最近将转换效率提高到10−4（0.01）以上%), over thicknesses of a few micrometres. Here we bypass phase-matching constraints by patterning subwavelength 3R-MoS2 flakes to realize non-local optical resonances, characterized by a field profile that is highly localized along the transverse direction but largely delocalized in the metasurface plane. By leveraging the large field confinement and high quality factors offered by our metasurface design, we are able to achieve two orders of magnitude (140×) second-harmonic generation enhancement compared with unpatterned 3R-MoS2 flakes with the same thickness, enabling single-pass second-harmonic conversion efficiencies of ~10−4 over only 160-nm-thick metastructures at relevant telecom wavelengths. This work opens new pathways towards the realization of efficient, on-chip-integrable nonlinear devices with compact footprints based on layered semiconductors, particularly relevant for integrated photonic circuitry and with potential applications in the field of quantum photonics. Exploiting non-local optical resonances on 3R-MoS2 flakes, researchers demonstrate single-pass second-harmonic conversion efficiencies of ~10−4 over only 160-nm-thick van der Waals nonlinear metastructures at telecom wavelengths.
{"title":"3R-stacked transition metal dichalcogenide non-local metasurface for efficient second-harmonic generation","authors":"Zhi Hao Peng, Michele Cotrufo, Ding Xu, Sander A. Mann, Siyuan Qiu, D. N. Basov, Milan Delor, Andrea Alú, P. James Schuck, Chiara Trovatello","doi":"10.1038/s41566-025-01781-3","DOIUrl":"10.1038/s41566-025-01781-3","url":null,"abstract":"Monolayer transition metal dichalcogenides are van der Waals semiconductors that exhibit exceptionally high second-order nonlinear susceptibilities χ(2) = 100–1,000 pm V−1, but limited conversion efficiency $$propto {[{chi }^{(2)}]}^{2}{z}^{2} approx 1{0}^{-10}$$ , due to their atomic thickness z. Contrary to the naturally occurring hexagonal crystal phase, which possesses inversion symmetry in samples with an even number of layers, the non-centrosymmetric rhombohedral phase (3R) enables much larger second-order nonlinear signals in bulk samples. However, at increased thicknesses (~200 nm), phase mismatch becomes relevant, limiting the maximum efficiency to ~10−6. Quasi-phase-matched 3R-MoS2 stacks have recently pushed conversion efficiencies beyond 10−4 (0.01%), over thicknesses of a few micrometres. Here we bypass phase-matching constraints by patterning subwavelength 3R-MoS2 flakes to realize non-local optical resonances, characterized by a field profile that is highly localized along the transverse direction but largely delocalized in the metasurface plane. By leveraging the large field confinement and high quality factors offered by our metasurface design, we are able to achieve two orders of magnitude (140×) second-harmonic generation enhancement compared with unpatterned 3R-MoS2 flakes with the same thickness, enabling single-pass second-harmonic conversion efficiencies of ~10−4 over only 160-nm-thick metastructures at relevant telecom wavelengths. This work opens new pathways towards the realization of efficient, on-chip-integrable nonlinear devices with compact footprints based on layered semiconductors, particularly relevant for integrated photonic circuitry and with potential applications in the field of quantum photonics. Exploiting non-local optical resonances on 3R-MoS2 flakes, researchers demonstrate single-pass second-harmonic conversion efficiencies of ~10−4 over only 160-nm-thick van der Waals nonlinear metastructures at telecom wavelengths.","PeriodicalId":18926,"journal":{"name":"Nature Photonics","volume":"19 12","pages":"1376-1384"},"PeriodicalIF":32.9,"publicationDate":"2025-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145382066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-27DOI: 10.1038/s41566-025-01779-x
An Aloysius Wang, Yifei Ma, Yunqi Zhang, Zimo Zhao, Yuxi Cai, Xuke Qiu, Bowei Dong, Chao He
The decline of Moore’s law coupled with the rise of artificial intelligence has recently motivated research into photonic computing as a high-bandwidth, low-power strategy to accelerate digital electronics. However, many modern-day photonic computing strategies are analogue, making them susceptible to noise and intrinsically difficult to scale. Optical skyrmions offer a route to overcome these limitations through digitization in the form of a discrete topological number that can be assigned to the analogue optical field. Apart from an intrinsic robustness against perturbations, optical skyrmions represent a new medium that has yet to be fully exploited for photonic computing, namely, spatially varying polarization. Here we propose and experimentally demonstrate a method for performing perturbation-resilient integer arithmetic with optical skyrmions and passive optical components, achieving discrete mathematical operations directly using optical skyrmions without external energy input. Optical skyrmions offer new opportunities for noise-resistant mathematical operations using light.
{"title":"Perturbation-resilient integer arithmetic using optical skyrmions","authors":"An Aloysius Wang, Yifei Ma, Yunqi Zhang, Zimo Zhao, Yuxi Cai, Xuke Qiu, Bowei Dong, Chao He","doi":"10.1038/s41566-025-01779-x","DOIUrl":"10.1038/s41566-025-01779-x","url":null,"abstract":"The decline of Moore’s law coupled with the rise of artificial intelligence has recently motivated research into photonic computing as a high-bandwidth, low-power strategy to accelerate digital electronics. However, many modern-day photonic computing strategies are analogue, making them susceptible to noise and intrinsically difficult to scale. Optical skyrmions offer a route to overcome these limitations through digitization in the form of a discrete topological number that can be assigned to the analogue optical field. Apart from an intrinsic robustness against perturbations, optical skyrmions represent a new medium that has yet to be fully exploited for photonic computing, namely, spatially varying polarization. Here we propose and experimentally demonstrate a method for performing perturbation-resilient integer arithmetic with optical skyrmions and passive optical components, achieving discrete mathematical operations directly using optical skyrmions without external energy input. Optical skyrmions offer new opportunities for noise-resistant mathematical operations using light.","PeriodicalId":18926,"journal":{"name":"Nature Photonics","volume":"19 12","pages":"1367-1375"},"PeriodicalIF":32.9,"publicationDate":"2025-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.comhttps://www.nature.com/articles/s41566-025-01779-x.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145382438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-24DOI: 10.1038/s41566-025-01783-1
Jesse A. Wisch, Kelvin A. Green, Amélie C. Lemay, Yiling Q. Li, Tersoo Upaa Jr, Evgeny O. Danilov, Hui Taou Kok, Seamus S. Lowe, Felix N. Castellano, Barry P. Rand
Triplet fusion upconversion has potential applications in solar cells, photoredox catalysis, additive manufacturing and bioimaging. However, solid-state upconversion systems have struggled to measure up to their solution-phase counterparts, often requiring enormous optical power densities to operate at the maximum efficiency. Here we substantially improve the performance of upconversion films through excitation with surface plasmons that propagate along a planar silver-film interface, leading to an absorption enhancement that reduces the intensity threshold Ith by a factor of 19 and enhances the external quantum efficiency by a factor of 17. From this, we achieve Ith values as low as 3.4 mW cm−2 and an external quantum efficiency up to 0.094%. To demonstrate real-world viability, we couple the upconversion film to plasmons generated by the near-field of excitons in an organic light-emitting diode. This scheme is then used to fabricate a white-emitting organic light-emitting diode where blue emission sources from plasmon-excited upconversion, achieving a high colour rendering index of 86.2 and setting precedent for blue emission in the absence of high-energy polarons or triplets. Performance of solid-state triplet fusion upconversion films is enhanced by surface plasmons, intensity threshold is reduced by a factor of 17 and external quantum efficiency is enhanced by a factor of 19. A white-emitting organic light-emitting diode featuring upconverted blue emission—rather than blue electroluminescence—is demonstrated, with a colour rendering index of up to 86.2.
{"title":"Plasmon-enhanced ultralow-threshold solid-state triplet fusion upconversion","authors":"Jesse A. Wisch, Kelvin A. Green, Amélie C. Lemay, Yiling Q. Li, Tersoo Upaa Jr, Evgeny O. Danilov, Hui Taou Kok, Seamus S. Lowe, Felix N. Castellano, Barry P. Rand","doi":"10.1038/s41566-025-01783-1","DOIUrl":"10.1038/s41566-025-01783-1","url":null,"abstract":"Triplet fusion upconversion has potential applications in solar cells, photoredox catalysis, additive manufacturing and bioimaging. However, solid-state upconversion systems have struggled to measure up to their solution-phase counterparts, often requiring enormous optical power densities to operate at the maximum efficiency. Here we substantially improve the performance of upconversion films through excitation with surface plasmons that propagate along a planar silver-film interface, leading to an absorption enhancement that reduces the intensity threshold Ith by a factor of 19 and enhances the external quantum efficiency by a factor of 17. From this, we achieve Ith values as low as 3.4 mW cm−2 and an external quantum efficiency up to 0.094%. To demonstrate real-world viability, we couple the upconversion film to plasmons generated by the near-field of excitons in an organic light-emitting diode. This scheme is then used to fabricate a white-emitting organic light-emitting diode where blue emission sources from plasmon-excited upconversion, achieving a high colour rendering index of 86.2 and setting precedent for blue emission in the absence of high-energy polarons or triplets. Performance of solid-state triplet fusion upconversion films is enhanced by surface plasmons, intensity threshold is reduced by a factor of 17 and external quantum efficiency is enhanced by a factor of 19. A white-emitting organic light-emitting diode featuring upconverted blue emission—rather than blue electroluminescence—is demonstrated, with a colour rendering index of up to 86.2.","PeriodicalId":18926,"journal":{"name":"Nature Photonics","volume":"20 1","pages":"24-30"},"PeriodicalIF":32.9,"publicationDate":"2025-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145382082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thermal evaporation is a well-established technique in thin-film manufacturing and holds great promise for the scalable fabrication of perovskite solar cells. However, the performance of fully thermally evaporated perovskite solar cells lags behind that of solution-processed counterparts. Here we report a reverse layer-by-layer deposition strategy to control the diffusion of solid-phase precursor, whereby the organic formamidinium iodide is deposited before the inorganic precursors (CsI/PbCl2/PbI2). Subsequent annealing leads to enhanced interfacial contact, efficient charge extraction and top-down perovskite crystallization with enhanced vertical uniformity. We fabricate fully thermally evaporated inverted perovskite solar cells with power conversion efficiencies of 25.19% (for an active area of 0.066 cm2) and 23.38% (1 cm2 area). Unencapsulated devices retain 95.2% of their initial power conversion efficiency after 1,000 h of continuous operation at the maximum power point. A layer-by-layer thermal evaporation strategy enables thermally evaporated inverted perovskite solar cells with a power conversion efficiency of 25.19%, maintaining about 95% of their initial efficiency after 1,000 h of operation.
{"title":"Fully thermally evaporated perovskite solar cells based on reverse layer-by-layer deposition","authors":"Yutian Xu, Kui Xu, Tengfei Pan, Xinwu Ke, Yajing Li, Na Meng, Xiaorong Shi, Junhao Liu, Yuanhao Cui, Ziqiang Wang, Xue Min, Yifan Lv, Lingfeng Chao, Zhelu Hu, Qingxun Guo, Yingdong Xia, Yonghua Chen, Wei Huang","doi":"10.1038/s41566-025-01768-0","DOIUrl":"10.1038/s41566-025-01768-0","url":null,"abstract":"Thermal evaporation is a well-established technique in thin-film manufacturing and holds great promise for the scalable fabrication of perovskite solar cells. However, the performance of fully thermally evaporated perovskite solar cells lags behind that of solution-processed counterparts. Here we report a reverse layer-by-layer deposition strategy to control the diffusion of solid-phase precursor, whereby the organic formamidinium iodide is deposited before the inorganic precursors (CsI/PbCl2/PbI2). Subsequent annealing leads to enhanced interfacial contact, efficient charge extraction and top-down perovskite crystallization with enhanced vertical uniformity. We fabricate fully thermally evaporated inverted perovskite solar cells with power conversion efficiencies of 25.19% (for an active area of 0.066 cm2) and 23.38% (1 cm2 area). Unencapsulated devices retain 95.2% of their initial power conversion efficiency after 1,000 h of continuous operation at the maximum power point. A layer-by-layer thermal evaporation strategy enables thermally evaporated inverted perovskite solar cells with a power conversion efficiency of 25.19%, maintaining about 95% of their initial efficiency after 1,000 h of operation.","PeriodicalId":18926,"journal":{"name":"Nature Photonics","volume":"19 12","pages":"1345-1352"},"PeriodicalIF":32.9,"publicationDate":"2025-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145382067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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