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Highly Efficient Bimetallic Catalysts Supported on Carbon Nanotubes for the NOx Reduction. 碳纳米管负载的高效双金属催化剂用于NOx还原。
IF 4.3 3区 材料科学 Q2 CHEMISTRY, MULTIDISCIPLINARY Pub Date : 2026-03-03 DOI: 10.3390/nano16050320
Patrícia S F Ramalho, Olívia S G P Soares, José L Figueiredo, Manuel F R Pereira

Nitrogen oxides represent a major source of concern related to atmospheric pollution, causing substantial impacts on human health. One innovative approach to reducing these emissions, and a promising alternative to conventional methods using NH3, is selective catalytic reduction with carbon (SCR-C). The aim of this study is the development of carbon-based catalysts that are active in the reduction of NO. For that, carbon nanotubes were subjected to treatments to modify their surface chemistry, including introducing oxygen and nitrogen groups, as well as potassium (K) and copper (Cu) incorporated as metal phases. In their original form, carbon nanotubes do not exhibit catalytic activity in reducing NO. However, catalytic performance is significantly improved by the addition of surface groups and Cu. Adding K to the support notably contributes to increasing the catalytic performance. N-doped carbon nanotubes impregnated with copper and potassium (CNT_M_BM@5Cu5K) achieved complete NO reduction at 360 °C. In this catalytic system, the formation of CO2 and N2 was observed and CO was not identified. Furthermore, although N2O was detected during the reaction, its amount was very low compared to the N2 and CO2 products. The stability of this catalyst was investigated over 87 h continuous test, revealing deactivation after 41 h of reaction.

氮氧化物是与大气污染有关的一个主要关切来源,对人类健康造成重大影响。减少这些排放的一种创新方法,也是使用NH3的传统方法的一种有希望的替代方法,是碳的选择性催化还原(scc)。本研究的目的是开发具有还原NO活性的碳基催化剂。为此,对碳纳米管进行处理以改变其表面化学性质,包括引入氧和氮基团,以及作为金属相结合的钾(K)和铜(Cu)。在其原始形式下,碳纳米管不表现出还原NO的催化活性。然而,表面基团和Cu的加入显著提高了催化性能。在载体中加入K对提高催化剂的催化性能有显著的促进作用。铜和钾浸渍的n掺杂碳纳米管(CNT_M_BM@5Cu5K)在360°C下实现了完全的NO还原。在该催化体系中,观察到CO2和N2的生成,但未发现CO。此外,虽然在反应过程中检测到N2O,但与N2和CO2产物相比,其量非常低。在87 h的连续测试中考察了该催化剂的稳定性,反应41 h后发现该催化剂失活。
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引用次数: 0
The Transition from Strain Softening to Strain Hardening in Metallic Glasses. 金属玻璃从应变软化到应变硬化的转变。
IF 4.3 3区 材料科学 Q2 CHEMISTRY, MULTIDISCIPLINARY Pub Date : 2026-03-03 DOI: 10.3390/nano16050319
Yongwei Wang, Guangping Zheng, Mo Li

Despite their excellent mechanical properties, metallic glasses (MGs) are significantly hindered by poor plasticity and toughness, which are essential for structural applications. The brittleness arises from the rapid propagation of shear bands (SBs), leading to strain softening and catastrophic failure. Recent advancements in microstructural engineering, particularly boundary engineering, such as nano-glass, focus on the utilization of heterogeneous structures to promote the proliferation and delocalization of SBs. Various attempts have been made experimentally to address these issues, but with very limited improvement in tensile strength and toughness. Under tensile loading, micro- or nano-pillar samples exhibit strain softening and continue to undergo plastic deformation after reaching yield or peak stress, especially the nano-glass micro-pillar. Reports on tensile strain-hardening in MG micro-pillars are rare. In this finite element simulation study, we optimize appropriate statistical and spatial distributions of free volume within the microsamples. Both the post-yield strength and the mean tangent modulus increase with progressive gradient structural modifications, thereby inducing a transition from strain-softening to strain-hardening behavior, as well as a concurrent transition from plastic fracture to brittle fracture. We systematically investigate the deformation mechanisms and transition mechanisms of fracture modes, which are closely associated with heterogeneous microstructures and their evolution in MGs. These insights into the transition mechanism could significantly facilitate the design and optimization of MGs to achieve enhanced toughness and strain hardening.

尽管金属玻璃具有优异的机械性能,但其塑性和韧性差严重阻碍了其在结构应用中的应用。脆性源于剪切带(SBs)的快速扩展,导致应变软化和突变破坏。近年来微结构工程,特别是边界工程,如纳米玻璃,主要是利用非均相结构来促进SBs的增殖和离域。为了解决这些问题,已经进行了各种各样的实验尝试,但在拉伸强度和韧性方面的改进非常有限。在拉伸载荷作用下,微柱或纳米柱试样表现为应变软化,在达到屈服应力或峰值应力后继续发生塑性变形,尤其是纳米玻璃微柱。关于MG微柱拉伸应变硬化的报道很少。在本有限元模拟研究中,我们优化了微样品中适当的自由体积的统计和空间分布。屈服后强度和平均切模量都随着梯度结构的渐变而增加,从而导致了从应变软化到应变硬化的转变,以及从塑性断裂到脆性断裂的同步转变。我们系统地研究了与mggs非均质显微组织及其演化密切相关的断裂模式的变形机制和转变机制。这些对过渡机制的深入了解可以极大地促进mgg的设计和优化,以实现增强韧性和应变硬化。
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引用次数: 0
Low-Defect Bulk-Germanium-on-Insulator Photodetectors with Resonant Cavity Enhancement at 1550 nm for High-Resolution SWIR Imaging. 高分辨率SWIR成像的1550 nm谐振腔增强低缺陷绝缘体锗光电探测器。
IF 4.3 3区 材料科学 Q2 CHEMISTRY, MULTIDISCIPLINARY Pub Date : 2026-03-02 DOI: 10.3390/nano16050316
Jiale Su, Ben Li, Yuhui Ren, Junhao Du, Xiangliang Duan, Tianyu Dong, Xueyin Su, Tianchun Ye, Xuewei Zhao, Yuanhao Miao, Henry H Radamson

High-resolution short-wave infrared (SWIR) imaging requires photodetectors (PDs) with simultaneously low dark current and high responsivity. To achieve this goal, we demonstrate low-defect bulk germanium-on-insulator (bulk-GeOI) PDs designed for enhanced 1550 nm absorption and suppressed dark current via a resonant cavity and low-defect material platform. Devices were fabricated by direct bonding low-defect bulk Ge and thinning it to ~1300 nm, with an intrinsic layer thickness of only 800 nm. This design avoids epitaxial defects to lower intrinsic dark current while forming a resonant cavity for enhanced responsivity at 1550 nm. Precise doping and Al2O3/Si3N4 bilayer sidewall passivation were employed. From a design perspective, using low-defect bulk Ge minimizes the defects from epitaxial growth and reduces intrinsic dark current, while thinning the Ge layer enhances the resonant cavity effect to improve 1550 nm responsivity. Experimentally, despite the thin absorbing layer, our devices achieved nA-level dark currents (e.g., 18 nA at -1 V for 10 μm devices) alongside high responsivities. Detailed analysis indicates that this dark current is predominantly attributed to surface and sidewall defects from mesa etching, with minimal contribution from low-defect bulk material defects, validating the effectiveness of the bulk-Ge approach in suppressing intrinsic bulk leakage. Optically, the devices achieved high responsivities of 0.85 A/W (1310 nm) and 0.72 A/W (1550 nm), corresponding to external quantum efficiencies of 80.6% and 57.7%, respectively. This work establishes the bulk-GeOI platform as a promising path toward high-performance SWIR PDs, successfully decoupling high responsivity from bulk leakage and paving the way for future gains through refined surface and interface engineering.

高分辨率短波红外成像需要同时具有低暗电流和高响应性的光电探测器。为了实现这一目标,我们展示了低缺陷绝缘体上锗(bulk- geoi) pd,该pd通过谐振腔和低缺陷材料平台设计用于增强1550 nm吸收和抑制暗电流。采用直接键合低缺陷体锗的方法制备器件,并将其减薄至~1300 nm,其固有层厚度仅为800 nm。该设计避免了外延缺陷以降低本征暗电流,同时形成谐振腔以增强1550 nm的响应性。采用了精确掺杂和Al2O3/Si3N4双分子层侧壁钝化。从设计角度来看,使用低缺陷体锗可以最大限度地减少外延生长的缺陷,降低固有暗电流,同时减薄锗层可以增强谐振腔效应,从而提高1550 nm的响应率。实验上,尽管吸收层很薄,但我们的器件实现了nA级暗电流(例如,10 μm器件在-1 V时达到18 nA)并具有高响应性。详细分析表明,这种暗电流主要归因于表面和侧面腐蚀的表面缺陷,而低缺陷的大块材料缺陷的贡献最小,验证了大块锗方法在抑制固有大块泄漏方面的有效性。光学方面,器件的响应率分别为0.85 A/W (1310 nm)和0.72 A/W (1550 nm),对应的外部量子效率分别为80.6%和57.7%。这项工作建立了bulk- geoi平台,作为高性能SWIR pd的一个有前途的途径,成功地将高响应性与bulk泄漏分离,并通过精细的表面和界面工程为未来的收益铺平了道路。
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引用次数: 0
Influence of Mg Concentration on Overall Performance of APTES-ZnO/PANI Hybrids Flexible UV Photodetectors. Mg浓度对APTES-ZnO/PANI杂化柔性紫外探测器综合性能的影响
IF 4.3 3区 材料科学 Q2 CHEMISTRY, MULTIDISCIPLINARY Pub Date : 2026-03-02 DOI: 10.3390/nano16050317
Lucas Melato, Erence Nkuna, Vusani Maphiri, Daniel Wamwangi, Richard Ocaya, Odireleng Ntwaeaborwa

Zinc oxide (ZnO) nanoparticles combined with conducting polymers such as polyaniline (PANI) demonstrate promising potential in flexible ultraviolet (UV) photodetection applications. However, the overall performance of undoped ZnO in photodetectors is often limited by high dark current, low responsivity, and detectivity, attributable to the high density of intrinsic defects and recombination rates. This study was aimed at evaluating the influence of magnesium (Mg) concentration (0.5≤x≤3.0% mol) on the structural and optical properties of 3-aminopropyltriethoxysilane (APTES)-modified ZnO/PANI hybrid matrix for ultraviolet (UV) photodetector applications. The novelty of this work lies in the dual strategy of Mg doping and surface modification intended to tailor the optoelectronic properties of ZnO nanoparticles (NPs). X-ray diffraction analysis confirmed the formation of a single-phase wurtzite ZnO. Photoluminescence measurements revealed a significant increase in photoemission intensity with increasing Mg concentration up to a maximum 2.0% mol. Incorporation of Mg remarkably modified the surface morphology and topography of the ZnO/PANI thin film, demonstrating an increase in both surface area and roughness. The Mg-ZnO/PANI photodetector with 1.0% mol of Mg doping concentration demonstrated excellent performance, with responsivity of 2.34 × 10-2 A/W and detectivity of 1.56 × 1010 Jones. The effect of Mg doping concentration on the photoemission and photodetection is discussed in detail.

氧化锌纳米颗粒与聚苯胺(PANI)等导电聚合物结合,在柔性紫外(UV)光探测中具有广阔的应用前景。然而,未掺杂ZnO在光电探测器中的整体性能往往受到高暗电流、低响应率和探测率的限制,这是由于高密度的本征缺陷和复合率。本研究旨在评价镁(Mg)浓度(0.5≤x≤3.0% mol)对3-氨基丙基三乙氧基硅烷(APTES)修饰ZnO/PANI杂化基质用于紫外(UV)光电探测器的结构和光学性能的影响。这项工作的新颖之处在于Mg掺杂和表面修饰的双重策略,旨在定制ZnO纳米颗粒(NPs)的光电性能。x射线衍射分析证实形成了单相纤锌矿ZnO。光致发光测量表明,随着Mg浓度的增加,光致发光强度显著增加,Mg的加入显著改变了ZnO/PANI薄膜的表面形貌和形貌,显示出表面积和粗糙度的增加。当Mg掺杂浓度为1.0% mol时,Mg- zno /PANI光电探测器的响应率为2.34 × 10-2 A/W,探测率为1.56 × 1010 Jones。详细讨论了Mg掺杂浓度对光发射和光探测的影响。
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引用次数: 0
3-Levels Vertically Stacked Si Nanosheet GAA pFETs with Low-Temperature Interface Treatment for Cryogenic Application. 低温界面处理的3级垂直堆叠Si纳米片GAA pfet。
IF 4.3 3区 材料科学 Q2 CHEMISTRY, MULTIDISCIPLINARY Pub Date : 2026-03-02 DOI: 10.3390/nano16050315
Lewen Qian, Tao Liu, Meicheng Liao, Xinlong Guo, Saisheng Xu, Min Xu, David Wei Zhang

Cryogenic CMOS technology provides a promising approach to surpass the Boltzmann limit and advance Moore's Law, addressing the increasing demand for high-performance computing. However, at cryogenic temperatures, the subthreshold swing (SS) of the device saturates due to the band-tail effect. This study presents a 3-vertically stacked gate-all-around nanosheet (NS) transistor featuring room-temperature O radical interface passivation. This approach leverages the high reactivity of O radicals to minimize etch-induced damage, passivate interface defects, reduce thermal budget, and ensure uniformity in complex 3D structures. Structural characterization revealed a uniform 0.76-nm-thick interface layer, with a surface roughness of 0.103 nm and an interface trap density of 2.72 × 1011 cm-2·eV-1 at 300 K. Thereby, the band-tail-induced SS saturation at cryogenic temperatures is effectively mitigated. Experimental results confirm a lower characteristic temperature Tv for reaching the saturation plateau, and a saturated SS of 15.4 mV/dec at 4.5 K. Furthermore, reducing disorder-induced defects substantially suppresses the band tail state-assisted carrier emission, thereby minimizing subthreshold leakage. This enables the device to achieve an off-state current below 1 pA/μm at a temperature under 77 K, reaching 0.18 pA/μm at 4.5 K. Additionally, a reduction in 25.4% in drain-induced barrier lowering (DIBL), with a 9% boost in transconductance (Gm) peak is achieved at 4.5 K. The enhanced subthreshold switching, reduced leakage, and improved Gm in this interfacial-optimized NS FET strongly supports cryo-CMOS as a viable solution for energy-efficient computing.

低温CMOS技术为超越玻尔兹曼极限和推进摩尔定律提供了一种有前途的方法,解决了对高性能计算日益增长的需求。然而,在低温下,由于带尾效应,器件的亚阈值摆幅(SS)饱和。提出了一种具有室温O自由基界面钝化特性的3垂直堆叠栅极全能纳米片晶体管(NS)。这种方法利用O自由基的高反应性来最大限度地减少蚀刻引起的损伤,钝化界面缺陷,减少热收支,并确保复杂3D结构的均匀性。表面粗糙度为0.103 nm, 300 K时界面阱密度为2.72 × 1011 cm-2·eV-1。因此,在低温下有效地减轻了带尾诱导的SS饱和。实验结果证实,达到饱和平台的特征温度Tv较低,在4.5 K时饱和SS为15.4 mV/dec。此外,减少无序缺陷大大抑制了带尾状态辅助载流子发射,从而最大限度地减少了阈下泄漏。这使得器件在77k以下的温度下实现低于1pa /μm的断开状态电流,在4.5 K时达到0.18 pA/μm。此外,在4.5 K时,漏极诱导势垒降低(DIBL)降低了25.4%,跨导(Gm)峰值提高了9%。在这种接口优化的NS FET中,增强的亚阈值开关,减少的泄漏和改进的Gm强烈支持cryo-CMOS作为节能计算的可行解决方案。
{"title":"3-Levels Vertically Stacked Si Nanosheet GAA pFETs with Low-Temperature Interface Treatment for Cryogenic Application.","authors":"Lewen Qian, Tao Liu, Meicheng Liao, Xinlong Guo, Saisheng Xu, Min Xu, David Wei Zhang","doi":"10.3390/nano16050315","DOIUrl":"10.3390/nano16050315","url":null,"abstract":"<p><p>Cryogenic CMOS technology provides a promising approach to surpass the Boltzmann limit and advance Moore's Law, addressing the increasing demand for high-performance computing. However, at cryogenic temperatures, the subthreshold swing (SS) of the device saturates due to the band-tail effect. This study presents a 3-vertically stacked gate-all-around nanosheet (NS) transistor featuring room-temperature O radical interface passivation. This approach leverages the high reactivity of O radicals to minimize etch-induced damage, passivate interface defects, reduce thermal budget, and ensure uniformity in complex 3D structures. Structural characterization revealed a uniform 0.76-nm-thick interface layer, with a surface roughness of 0.103 nm and an interface trap density of 2.72 × 10<sup>11</sup> cm<sup>-2</sup>·eV<sup>-1</sup> at 300 K. Thereby, the band-tail-induced SS saturation at cryogenic temperatures is effectively mitigated. Experimental results confirm a lower characteristic temperature <i>T<sub>v</sub></i> for reaching the saturation plateau, and a saturated SS of 15.4 mV/dec at 4.5 K. Furthermore, reducing disorder-induced defects substantially suppresses the band tail state-assisted carrier emission, thereby minimizing subthreshold leakage. This enables the device to achieve an off-state current below 1 pA/μm at a temperature under 77 K, reaching 0.18 pA/μm at 4.5 K. Additionally, a reduction in 25.4% in drain-induced barrier lowering (DIBL), with a 9% boost in transconductance (<i>G<sub>m</sub></i>) peak is achieved at 4.5 K. The enhanced subthreshold switching, reduced leakage, and improved <i>G<sub>m</sub></i> in this interfacial-optimized NS FET strongly supports cryo-CMOS as a viable solution for energy-efficient computing.</p>","PeriodicalId":18966,"journal":{"name":"Nanomaterials","volume":"16 5","pages":""},"PeriodicalIF":4.3,"publicationDate":"2026-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12986002/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147444171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hydrothermal Synthesis of CeO2: Structure-AdsorptionPerformance Relationship in Methyl Orange Dye Removal. 水热合成CeO2:结构-吸附-性能关系对甲基橙染料的去除。
IF 4.3 3区 材料科学 Q2 CHEMISTRY, MULTIDISCIPLINARY Pub Date : 2026-02-28 DOI: 10.3390/nano16050311
Fatih Sargin, Funda Ak Azem

CeO2 particles were synthesized via a hydrothermal method to investigate the influenceof precursor molarity and reaction time on their structural, optical, and adsorption characteristics. Ce(NO3)3·6H2O served as the cerium source, while PVP and Triton X-100acted as surfactants to regulate nucleation and particle growth. XRD and Raman analysesconfirmed the formation of single-phase cubic fluorite CeO2, whereas FTIR spectra verifiedthe presence of Ce-O bonding. SEM observations revealed that a decreasing precursormolarity led to smaller and more uniform particles, while prolonged reaction times enhanced crystallinity. UV-Vis DRS and XPS analyses indicated that both the band gap(3.06-3.12 eV) and the Ce3+/Ce4+ ratio were governed by oxygen vacancies, demonstrating defect-mediated redox behavior. Adsorption studies using methyl orange (MO) dye followed pseudo-second-order kinetics (R2 > 0.99), indicating chemisorption as the dominant mechanism. The CP1-8 sample exhibited the highest dye removal efficiency (87%) under acidic conditions (pH < pHPZC). These findings demonstrate that controlled hydrothermal synthesis enables precise tuning of CeO2 morphology, defect density, and surface chemistry, yielding efficient adsorbent materials for environmental remediation applications.

采用水热法合成了CeO2颗粒,考察了前驱体摩尔浓度和反应时间对其结构、光学和吸附特性的影响。Ce(NO3)3·6H2O作为铈源,PVP和Triton x -100作为表面活性剂调节成核和颗粒生长。XRD和Raman分析证实形成了单相立方萤石CeO2,而FTIR光谱证实了Ce-O键的存在。扫描电镜观察表明,前驱摩尔浓度的降低导致颗粒更小、更均匀,而反应时间的延长提高了结晶度。紫外-可见DRS和XPS分析表明,带隙(3.06-3.12 eV)和Ce3+/Ce4+比值均受氧空位的影响,表现出缺陷介导的氧化还原行为。甲基橙(MO)染料的吸附动力学遵循准二级动力学(R2 > 0.99),表明化学吸附是主要机理。CP1-8样品在酸性条件下(pH < pHPZC)脱色效率最高(87%)。这些发现表明,控制水热合成可以精确调整CeO2的形态、缺陷密度和表面化学性质,从而生产出用于环境修复应用的高效吸附材料。
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引用次数: 0
Facile Fabrication of Carbon Paper-Supported Fe Catalyst Under Pulse Laser Irradiation for Degradation of Rhodamine B. 脉冲激光辐照下碳纸负载铁催化剂的制备及其降解罗丹明B的研究。
IF 4.3 3区 材料科学 Q2 CHEMISTRY, MULTIDISCIPLINARY Pub Date : 2026-02-28 DOI: 10.3390/nano16050314
Wenhao Bai, Fei Chang, Xiaohan Fan, Wei Tian

Persistent organic pollutants, such as Rhodamine B (RhB), pose significant environmental and health risks, necessitating the development of advanced oxidation technologies for effective removal. While heterogeneous photo-Fenton catalysts are known for their high degradation efficiency, their practical application is often limited by complex synthesis processes, catalyst detachment, and difficult recovery. This study proposes an innovative laser-induced, one-step synthesis strategy to fabricate metal/carbon nanocomposite catalytic layers directly onto flexible carbon paper. The as-prepared composites exhibit strong interfacial interaction between metal nanoparticles and the carbon matrix, as indicated by XPS analysis, and demonstrate enhanced catalytic activity in the UV/H2O2 system. Notably, the integrated composites exhibit exceptional catalytic activity in the UV/H2O2 system, achieving complete degradation of a 20 mg/L RhB solution within just 1.5 h. The enhanced performance is attributed to the facilitated Fe3+/Fe2+ cycling and efficient generation of hydroxyl radicals (·OH), although the underlying charge separation mechanism requires further investigation with techniques such as photoluminescence spectroscopy and transient photocurrent measurements. This work not only demonstrates the high activity and stability of the photo-Fenton catalyst but also provides a green, rapid fabrication approach for the development of efficient and integrable catalytic devices for wastewater treatment.

罗丹明B (RhB)等持久性有机污染物构成重大的环境和健康风险,需要开发先进的氧化技术以有效去除。虽然非均相光fenton催化剂以其高降解效率而闻名,但其实际应用往往受到复杂的合成工艺,催化剂脱落和难以回收的限制。本研究提出了一种创新的激光诱导一步合成策略,直接在柔性碳纸上制造金属/碳纳米复合材料催化层。XPS分析表明,制备的复合材料在UV/H2O2体系中具有较强的催化活性,金属纳米颗粒与碳基体之间具有较强的界面相互作用。值得注意的是,集成复合材料在UV/H2O2体系中表现出优异的催化活性,仅在1.5小时内就能完全降解20 mg/L的RhB溶液。这种增强的性能归功于Fe3+/Fe2+的促进循环和羟基自由基(·OH)的有效生成,尽管潜在的电荷分离机制需要进一步研究,如光致发光光谱和瞬态光电流测量。这项工作不仅证明了光fenton催化剂的高活性和稳定性,而且为开发高效、可集成的废水处理催化装置提供了一种绿色、快速的制造方法。
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引用次数: 0
Sb-Doped SnO2 Hollow Spheres for Low-Resistance and Highly Selective Xylene Sensors. 低阻高选择性二甲苯传感器用sb掺杂SnO2空心球。
IF 4.3 3区 材料科学 Q2 CHEMISTRY, MULTIDISCIPLINARY Pub Date : 2026-02-28 DOI: 10.3390/nano16050313
Jung-Hoo Seo, Seong-Young Yoon, Sang-Myeong Lee, Seong-Yong Jeong

It is important to be able to detect xylene with high selectivity and low sensor resistance when monitoring indoor and outdoor air quality. In this study, we report the development of Sb-doped SnO2 hollow spheres synthesized via ultrasonic spray pyrolysis for high-performance xylene detection with significantly reduced sensor resistance. The 2 mol% Sb-doped SnO2 sensor exhibited a remarkably high response (SX = 24.0) and selectivity (SX/SE = 3.4) toward 5 ppm xylene at 300 °C. Notably, the sensor resistance in air (Ra) was reduced by ~200-fold compared to that of pure SnO2, reaching a practical level of 38.5 kΩ, which enables cost-effective signal measurement. Furthermore, the 2Sb-SnO2 sensor demonstrated a low detection limit of 50 ppb and rapid response times (4-5 s). These results suggest that Sb doping is a highly effective strategy for engineering low-resistance and highly selective SnO2 gas sensors. This study could pave the way for a practical approach to designing xylene detection systems for indoor air monitoring.

在监测室内和室外空气质量时,重要的是能够以高选择性和低传感器电阻检测二甲苯。在这项研究中,我们报道了通过超声波喷雾热解合成的sb掺杂SnO2空心球的发展,用于高性能二甲苯检测,显著降低了传感器电阻。在300℃下,掺杂2mol % sb的SnO2传感器对5ppm二甲苯具有非常高的响应(SX = 24.0)和选择性(SX/SE = 3.4)。值得注意的是,与纯SnO2相比,传感器在空气中的电阻(Ra)降低了约200倍,达到38.5 kΩ的实用水平,从而实现了具有成本效益的信号测量。此外,2Sb-SnO2传感器具有50 ppb的低检测限和快速响应时间(4-5 s)。这些结果表明Sb掺杂是设计低电阻、高选择性SnO2气体传感器的一种非常有效的策略。本研究为室内空气监测二甲苯检测系统的设计提供了一种实用的方法。
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引用次数: 0
Recent Advances in Metal Phthalocyanine for Sensing Applications. 金属酞菁传感应用研究进展。
IF 4.3 3区 材料科学 Q2 CHEMISTRY, MULTIDISCIPLINARY Pub Date : 2026-02-28 DOI: 10.3390/nano16050312
Hao Wu, Qifubo Geng, Xunjun He, Mingze Zhang, Sergey Maksimenko

In recent years, metal phthalocyanine (MPc)-based sensors have garnered significant interest for applications in environmental monitoring, biomedical diagnostics, and industrial process control, owing to their efficient and cost-effective sensing capabilities. In contrast to conventional inorganic materials, MPcs are a class of small-molecule materials characterized by a stable, π-conjugated macrocyclic framework with a tunable central metal ion. This structural architecture imparts unique physicochemical properties, including high chemical stability, excellent redox activity, structural versatility, considerable dielectric constant and electrical conductivity, along with pronounced optical absorption and excellent environmental stability. By incorporating different metal ions into the macrocyclic core, their functional characteristics can be precisely modulated to achieve high sensitivity and selectivity toward various gas, ion, or biomolecule targets. Leveraging these advantages, MPcs have been extensively utilized in diverse sensing platforms, such as photoelectric, gas, and biosensors. This review outlines recent advances in MPc-based sensor research and provides perspectives on their future development trends.

近年来,基于金属酞菁(MPc)的传感器由于其高效和经济的传感能力,在环境监测、生物医学诊断和工业过程控制方面的应用获得了极大的兴趣。与传统无机材料相比,MPcs是一类小分子材料,其特点是具有稳定的π共轭大环框架和可调谐的中心金属离子。这种结构结构赋予其独特的物理化学性质,包括高化学稳定性、优异的氧化还原活性、结构通用性、可观的介电常数和导电性,以及显著的光吸收和优异的环境稳定性。通过将不同的金属离子加入到大环核心中,可以精确地调节它们的功能特性,以实现对各种气体、离子或生物分子目标的高灵敏度和选择性。利用这些优势,MPcs已广泛应用于各种传感平台,如光电、气体和生物传感器。本文概述了基于mpc的传感器研究的最新进展,并对其未来的发展趋势进行了展望。
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引用次数: 0
Silver Nanoparticle Priming Enhanced Seed Germination in Bupleurum chinense and Reshaped the Fungal Community Structure, Reducing the Robustness of the Fungal Interaction. 纳米银颗粒激发柴胡种子萌发,重塑真菌群落结构,降低真菌相互作用的稳稳性。
IF 4.3 3区 材料科学 Q2 CHEMISTRY, MULTIDISCIPLINARY Pub Date : 2026-02-27 DOI: 10.3390/nano16050307
Sifei Duan, Yi Chen, Xuehui Dong

Seed germination represents the initial stage of the plant life cycle and directly affects subsequent plant establishment. Mold infestation is a major cause of reduced germination rate, yet effective and safe control methods are still lacking. Thus, developing effective strategies to ensure healthy seed germination is of critical importance. This study investigated the effect of priming with silver nanoparticles (AgNPs) on the germination rate of Bupleurum chinense seeds and on mold suppression. Additionally, we aimed to clarify the underlying microbial mechanism through high-throughput sequencing of the internal transcribed spacer (ITS) region. Seeds primed with 15 mg/L AgNPs exhibited a significantly increased germination rate of 71.67% (vs. 58.90% in control) and reduced mold incidence to 16.46% (vs. 31.01%). The ITS sequencing revealed that AgNPs significantly reduced the Shannon index to 3.60 (vs. 4.04) and decreased the abundance of potential pathogens. Co-occurrence network analysis demonstrated that AgNPs simplified the fungal network and reduced the natural connectivity to 22.35 (vs. 39.38). Topological analysis identified five keystone hub genera (e.g., Trichosporon, Podospora), whose suppression indicates their critical roles in network maintenance. This study provides evidence supporting the application of AgNPs in seed germination and offering a foundation for addressing germination challenges in mold-susceptible seeds.

种子萌发代表了植物生命周期的初始阶段,并直接影响到随后的植物建立。霉菌侵染是马铃薯发芽率降低的主要原因,但目前仍缺乏有效、安全的防治方法。因此,制定有效的策略来确保健康的种子发芽是至关重要的。研究了银纳米颗粒(AgNPs)对柴胡种子发芽率和霉菌抑制的影响。此外,我们旨在通过内部转录间隔区(ITS)区域的高通量测序来阐明潜在的微生物机制。15 mg/L AgNPs处理的种子发芽率显著提高71.67%(对照为58.90%),霉菌发病率显著降低16.46%(对照为31.01%)。ITS测序结果显示,AgNPs显著降低Shannon指数至3.60 (vs. 4.04),降低了潜在病原体的丰度。共现网络分析表明,AgNPs简化了真菌网络,并将自然连通性降低到22.35 (vs. 39.38)。拓扑分析确定了5个关键枢纽属(如Trichosporon, Podospora),其抑制表明它们在网络维持中起关键作用。该研究为AgNPs在种子萌发中的应用提供了证据,并为解决霉菌易感种子的萌发挑战奠定了基础。
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Nanomaterials
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