Nanomaterials最新文献

Molybdenum disulfide (MoS₂) films are promising solid lubricants for aerospace and other advanced applications, yet their tribological performance is highly sensitive to environmental conditions. To enhance environmental adaptability, Zr-doped MoS₂ composite films were prepared by magnetron co-sputtering, and their composition, microstructure, mechanical properties, and tribological behavior were systematically investigated. The results showed that the as-deposited MoS₂ films exhibited a nearly stoichiometric sulfur-to-molybdenum ratio (S/Mo ≈ 2), while the Zr-doped MoS₂ composite films showed sulfur-deficient, sub-stoichiometric ratios (S/Mo < 2). Pure MoS₂ films displayed a porous columnar structure, whereas with the incorporation of Zr, the columnar structure becomes progressively more compact. Moreover, the film structure transitions from a purely crystalline form to a two-phase structure with both crystalline and amorphous phases coexisting. The hardness and elastic modulus of the films increased with the addition of Zr, mainly due to the densification of the structure and the disorder introduced in the film. Moderate Zr doping markedly improved the friction and wear performance of composite films across vacuum, atmospheric, and humid environments. The optimal film achieved a coefficient of friction (COF) of 0.02 and wear rate of 6.23 × 10^-8 mm³/N·m in vacuum and COFs of 0.10 with low wear rates in both atmospheric and humid conditions. By adjusting the Zr target power to modulate Zr content, the crystallographic orientation and microstructure of MoS₂-Zr composite films could be tailored, thereby regulating their mechanical and tribological properties. This study provides theoretical guidance for the application of metal-doped MoS₂ composite films under alternating environmental conditions.

In this study, in situ P-doping of Ge-based layers has been studied and compared with implanted layer profiles acting as absorbent top layer in PIN photodetectors. Several structures containing multilayers of n⁺-Ge/i-Ge, n⁺-GeSi/i-Ge, and n⁺-Ge/i-GeSi, were designed to regulate dopant out-diffusion and interface quality. The purpose of this study is to make an optimized n-type doping layer for PIN photodetectors with low dark current, high responsivity, and high quantum efficiency operating in short wavelength infrared (SWIR) region. The Ge-based structure on Si substrate was transferred to oxidized Si substrate and was finally back-etched from Si to form Ge-on-insulator (GOI) substrate. Comprehensive characterization using high-resolution X-ray diffraction (HR-XRD), secondary ion mass spectrometry (SIMS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), and photoluminescence (PL) have been applied at the first stage of our work. The initial Ge layer contains tensile strain of 0.15-0.17%. PL measurements further indicate a redshift of the Γ-LH transition and carrier-concentration-induced quenching at high doping levels, highlighting the competing effects of band filling and non-radiative recombination in heavily n-doped Ge structures. To circumvent this fundamental trade-off, we devised a decoupled device strategy in which the active absorption region employs an intrinsic Ge/GeSi nanoscale multilayer structure to preserve crystal and interface quality. Although, the epitaxial growth parameters were on the optimized conditions, still out-diffusion (in form of segregation and auto-doping) of P could not be impeded. Our final n-type layer in PIN structure was formed by implantation. This approach yields high-performance photodetectors with a peak responsivity of 0.99 A/W at 1550 nm, a corresponding external quantum efficiency of 79%, and low specific contact resistivities of 2.66 × 10^-6 Ω·cm² (n-type) and 1.38 × 10^-8 Ω·cm² (p-type). This work demonstrates that the strategic combination of multilayer/interface engineering and ion-implantation-based doping is a highly effective strategy for tailoring the optoelectronic properties of Ge-based nanomaterials for high-performance SWIR photodetection.

Fluorescence remains a foundational optical phenomenon underpinning applications in sensing, imaging, diagnostics, and catalysis. Among the strategies developed to modulate fluorescence, coupling fluorophores with plasmonic metals has emerged as a powerful route for both enhancement and quenching. The collective excitation and decay of surface plasmons can profoundly alter fluorophore excitation rates, radiative pathways, and emission efficiencies. This review provides a mechanistic and historical synthesis of metal-fluorophore interactions, unifying enhancement and quenching phenomena under the term Metal Manipulated Fluorescence (MMF). We summarize the fundamental principles of fluorescence and plasmon resonance, discuss theoretical and computational approaches for predicting metal-fluorophore coupling, and critically examine recent advances in plasmonic nanostructure synthesis that enable precise control over fluorophore behaviour. By integrating experimental observations with theoretical models, we highlight the opportunities and limitations of current MMF strategies and outline future directions in materials design, synthesis methodologies, and predictive modelling for next-generation optical and optoelectronic technologies.

The journal retracts the article entitled "Magnetic Ionic Liquid Nanocatalyst to Improve Mechanical and Thermal Properties of Epoxy Nanocomposites" [...].

The effect of the confinement of fluorophores (rhodamine 6G) in nano-cavities of porous 3D sculptured coatings made by glancing-angle deposition (GLAD) was investigated by fluorescence-lifetime imaging microscopy (FLIM). Shortening of fluorescence/ photoluminescence lifetime by ∼10% was observed from the dye-permeated (in liquid) structure; however, there was no rotational hindrance of dye molecules. When dried, a strong rotational hindrance 89% was observed for the orientation along the ordinary optical axis (slow-axis), and the hindrance was smaller than 57% for the extraordinary direction (fast axis). Light-intensity distribution inside the nano-structure with a form birefringence was numerically modeled using plane-wave illumination and a dipole source. Nanoscale localization of light intensity due to dipole nature I∼1/radius6 and boundary conditions for E-field allows efficient energy deposition inside the region of lower refractive index (nanogaps).

Phase-change materials of the Ge-Sb-Te (GST) system are promising for non-volatile memory and programmable photonics owing to their reversible amorphous-crystalline transitions. Among these materials, GeSb₄Te₇ stands out for its optimal balance of thermal stability, switching speed, and energy efficiency. The properties of GST materials are critically dependent on structural defects, particularly germanium vacancies that occur during synthesis and operation. Using density functional theory, we demonstrate that Ge vacancies and Ge-Sb intermixing significantly influence the electronic and optical properties of GeSb₄Te₇. Positive binding energies reveal vacancy clustering tendencies, which systematically reduce p-type degeneracy and widen the band gap (from 0.47 to 0.67 eV at a 2.7% vacancy concentration). Consequently, the metallic optical response in the visible range diminishes, as reflected in the less negative real dielectric function. Furthermore, we extend our investigation to the fundamental building block of this material system, the GeSb₂Te₄ monolayer. By studying controlled interlayer displacements of Ge and Te atoms in an otherwise stoichiometric slab, we elucidate the switching mechanism in the two-dimensional limit. The pristine monolayer exhibits semiconducting behavior with an indirect band gap of 0.74 eV, while layer sliding induces a semiconductor-to-metal transition accompanied by pronounced changes in the optical absorption spectrum. The asymmetric energy barrier (1.69 eV forward, 0.60 eV reverse) suggests favorable reversible switching via structural distortions alone, without requiring chemical modifications. The obtained results, spanning from defective bulk crystals to structurally distorted monolayers, are important for the targeted optimization of GST material properties in memory devices, optical elements, and emerging nanoscale phase-change applications.

Both the electrical conductivity and tailored mechanical characteristics-showing flexibility and structural integrity-are key properties of polymer composites. In this work, a novel, simple, and water-based strategy for synthesizing rGO-MWCNT/polymer composites was developed. Namely, carbon nanofillers in a mixture of reduced graphene oxide (rGO) and multi-walled carbon nanotubes (MWCNTs) were incorporated in a waterborne methacrylic polymer matrix at loadings of 0.25, 0.5, and 1.0 wt.% nanofiller, and with rGO-to-MWCNT ratios of 10:1, 1:1, and 1:10 (w/w) at room temperature. Electrically conductive composites were obtained with all tested filler rates showing the highest conductivity (up to 8.2 × 10^-3 Sm^-1) for the MWCNT-rich filler due to the formation of a segregated network of the filler in the matrix. The mechanical properties of the composites-characterized by their Young's modulus and elongation at break-strongly depended on both the filler incorporation rate and the rGO:MWCNT ratio. For instance, soft and flexible composites were obtained by incorporating 0.25 wt.% of the MWCNT-rich filler, which increased the elongation at break from 154.2% (neat polymer) to 252.4%. Overall, this study emphasizes the sensitive interplay between carbon filler introduction incorporating conductivity and the fillers' impact on the mechanical properties of a polymer composite, both necessitating careful optimization for applications, e.g., in flexible electronics.

The design of broadband, high-efficiency solar absorbers remains challenging due to the complex and ill-posed inverse mapping from the target optical responses to the physical structures in inverse design optimization. To address this, we propose a joint forward-inverse deep learning framework that enables the rapid and accurate optimization of multilayer metamaterial absorbers. This method integrates an inverse network based on a Modified Swin Transformer with a Multilayer Perceptron forward proxy and performs end-to-end training in a consistency-driven cycle. This strategy reduces the one-to-many ambiguity in inverse design and improves the prediction accuracy, with normalized test mean squared errors of 7.2 × 10^-5 (inverse) and 6.8 × 10^-5 (forward). Using this framework, we optimized an absorber comprising W/SiO₂ hyperbolic metamaterial stacks and TiO₂/SiO₂ anti-reflection coatings, achieving 97.4% average absorptivity across the 400-1750 nm solar spectrum, along with polarization insensitivity and robust wide-angle performance up to 60° incidence. The outdoor solar heating tests showed that the fabricated absorber reaches a peak temperature of 86.3 °C under natural sunlight, with an irradiance peak of about 850 W/m² at noon. This work shows that combining forward and reverse deep learning provides a powerful and scalable paradigm for accelerating the intelligent design of high-performance solar thermal metamaterials.

A polarization-insensitive compact optical modulator based on a graphene-hybrid surface plasmon polariton waveguide is proposed. The inverted U-shaped structure enables the synchronous control of TE/TM modes via Fermi level tuning, achieving a maximum attenuation of 0.247 dB/μm (E_f = 0.3 eV) and a minimum attenuation of 0.026-0.028 dB/μm (E_f = 1.0 eV) at 3 THz, with a polarization-dependent modulation error of only 0.002 dB/μm. The 100 μm × 30 μm device operates effectively at 2.5 THz (120 μm), demonstrating its potential for integrated photonic circuits. Additionally, the proposed modulator is compatible with Complementary Metal-Oxide-Semiconductor (CMOS) technology. The excellent ultra-broadband modulation performance of the graphene-hybrid plasmonic waveguide (GHPW) thereby paves the way for high-speed communication, non-destructive testing, biomedical sensing and optical computing.

A highly efficient pyro-catalytic system based on a g-C₃N₄/ZnO composite has been developed for dye degradation under near-room-temperature thermal cycling (25-60 °C). This system integrates pyroelectric charge generation with electrochemical redox reactions. The g-C₃N₄/ZnO for pyro-catalytic Rhodamine B (RhB) dye decomposition with 95.6% efficiency in the dark, whereas pristine g-C₃N₄ reached only approximately 60.1% under identical conditions. The degradation mechanism is primarily driven by the in situ generation of superoxide (•O₂^-) and hydroxyl (•OH) radicals, as verified by radical quenching experiments. The formation of the composite facilitates the efficient spatial separation of pyroelectric-induced charges, thereby endowing g-C₃N₄/ZnO with a significantly enhanced pyro-catalytic performance compared to g-C₃N₄ alone. This study demonstrates the promising application of g-C₃N₄/ZnO as a high-performance pyro-catalyst under mild thermal conditions, offering a sustainable and light-independent strategy for wastewater treatment by utilizing ambient temperature fluctuations.