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Electronic band evolution between Lieb and kagome nanoribbons. Lieb纳米带与kagome纳米带电子带演化。
IF 2.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-01-17 DOI: 10.1088/1361-6528/ada569
E S Uchôa, W P Lima, S H R Sena, A J C Chaves, J M Pereira, D R da Costa

We investigate the electronic properties of nanoribbons made out of monolayer Lieb, transition, and kagome lattices using the tight-binding model with a generic Hamiltonian. It allows us to map the evolutionary stages of the interconvertibility process between Lieb and kagome nanoribbons by means of only one control parameter. Results for the energy spectra, the density of states, and spatial probability density distributions are discussed for nanoribbons with three types of edges: straight, bearded, and asymmetric. We explore for different nanoribbon terminations: (i) the semiconductor-metallic transition due to the interconvertibility of the Lieb and kagome lattices, (ii) the effect of both nanoribbon width and inclusion of the next-nearest-neighbor hopping term on the degeneracy of the quasi-flat states, (iii) the behavior of the energy gap versus the nanoribbon width, (iv) the existence and evolution of edge states, and (v) the nodal spatial distributions of the total probability densities of the non-dispersive states.

我们使用具有一般哈密顿量的紧密结合模型研究了由单层Lieb,过渡和kagome晶格制成的纳米带的电子特性。它允许我们通过仅一个控制参数来绘制Lieb和kagome纳米带之间相互转换过程的进化阶段。讨论了具有直边、胡须边和非对称边的纳米带的能谱、态密度和空间概率密度分布的结果。我们探索了不同的纳米带末端:(i)由于Lieb和kagome晶格的可交换性引起的半导体-金属跃迁,(ii)纳米带宽度和次近邻跳跃项的包含对准平坦态简并的影响,(iii)能隙对纳米带宽度的行为,(iv)边缘态的存在和演化,以及(v)非色散态总概率密度的节点空间分布。 。
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引用次数: 0
Enhanced lithium-ion battery performance with a novel composite anode: S-doped graphene oxide, polypyrrole, and fumed silica. 一种新型复合阳极:s掺杂氧化石墨烯、聚吡咯和气相二氧化硅,增强了锂离子电池的性能。
IF 2.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-01-15 DOI: 10.1088/1361-6528/ada039
Mohammed Al-Bujasim, Metin Gencten, Koray Bahadır Donmez, Melih B Arvas, Nilgun Karatepe, Yucel Sahin

In this work, a novel composite anode material was developed, utilizing S-doped graphene oxide (SGO), polypyrrole (PPy), and fumed silica to enhance the performance of lithium-ion batteries (LIBs). The chronoamperometric approach was used to produce SGO, while the chemical method was employed to synthesize PPy. A composite of SGO, PPy, and fumed silica was prepared as an anode for a half-cell, using two samples: one with a high PPy ratio (S1) and the other with a low PPy ratio (S2) and compared the results with bare sample (S0). The S1 sample exhibited a good initial discharge capacity (648 mAh g-1), with capacities of 207 and 131 mAh g-1at 5 C and 10 C, respectively. S1 and S2 also demonstrated superior cycling stability at a high current (100 cycles at 10 C), with a retention capacity of 99 and 87%, respectively compared with S0 which retained only 68%. Coin-type full cells with S1 as the anode and LiFePO4(LFP) as the cathode were assembled and compared with commercial graphite anodes. The S1 full cell showed a high reversible capacity (164 mAh g-1at 0.1 C), with a capacity retention of 66% after 100 cycles at 10 C. At the same time, the graphite anode exhibited a reversible capacity of 133 mAh g-1at 0.1 C, with a capacity retention of 58% after 100 cycles at 10 C. The S1 full cell achieved a gravimetric energy density of 164 W h kg-1at 0.1 C and 49 W h kg-1at 10 C, which is 25% greater than that of the graphite full cell(39 W h kg-1) at 10 C. These distinguishing characteristics of S1 make it a viable substitute for graphite as a high-performance anode material in LIBs, opening the possibility for devices with reliable battery systems.

本研究利用 S 掺杂氧化石墨烯(SGO)、聚吡咯(PPy)和气相二氧化硅开发了一种新型复合负极材料,以提高锂离子电池(LIB)的性能。SGO 的制备采用了计时器法,而 PPy 的合成则采用了化学法。利用两个样品:一个是高 PPy 比率(S1),另一个是低 PPy 比率(S2),制备了 SGO、PPy 和气相二氧化硅的复合材料,作为半电池的阳极,并将结果与裸样品(S0)进行了比较。S1 样品显示出良好的初始放电容量(648 mAh/g),在 5C 和 10C 时的容量分别为 207 mAh/g 和 131 mAh/g。S1 和 S2 还在高电流下(10 摄氏度下循环 100 次)表现出卓越的循环稳定性,容量保持率分别为 99% 和 87%,而 S0 的容量保持率仅为 68%。以 S1 为阳极、磷酸铁锂(LFP)为阴极组装了硬币型全电池,并与商用石墨阳极进行了比较。S1 全电池显示出较高的可逆容量(0.1 摄氏度时为 164 毫安时/克),在 10 摄氏度下循环 100 次后容量保持率为 66%。同时,石墨阳极在 0.1C 时的可逆容量为 133 mAh/g,在 10C 下循环 100 次后容量保持率为 58%。S1 全电池在 0.1 摄氏度时的重力能量密度为 164 瓦时/千克,在 10 摄氏度时为 49 瓦时/千克,比石墨全电池在 10 摄氏度时的重力能量密度(39 瓦时/千克)高出 25%。S1 的这些显著特点使其成为石墨的可行替代品,成为 LIB 中的高性能负极材料,为具有可靠电池系统的设备提供了可能。
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引用次数: 0
Enhanced ethylenediamine detection using WO3-BiVO4nanoflakes heterostructure with exceptional adsorption capabilities: experimental and theoretical studies. 利用具有特殊吸附能力的 WO3-BiVO4 纳米片异质结构增强乙二胺检测:实验和理论研究。
IF 2.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-01-15 DOI: 10.1088/1361-6528/ada038
Eun-Bi Kim, M Shaheer Akhtar, Sadia Ameen, Ahmad Umar, Sheikh Akbar, S Baskoutas

The present work describes the synthesis of WO3-BiVO4-nanoflakes heterostructure (NFHs) by a single step hydrothermal method. The analysis of crystalline phases and structural behavior deduced the formation of good crystal quality WO3-BiVO4NFHs. Under microscopic observation, the as-prepared WO3-BiVO4displayed uniform and conspicuous nanoflakes like structures. The extensive density functional theory was studied to examine the electronic and band structures of as-prepared WO3-BiVO4NFHs in terms of formation energy, charge density, density of state and band structures. The synthesized WO3-BiVO4NFHs was used as sensing electrode towards the detection of ethylenediamine (EDA) chemical that displayed a good sensitivity of ∼318.52 mA·mM-1cm-2, excellent dynamic range of 1μM-1 mM with detection limit of ∼94.51 nM and retention coefficient of ∼0.9929. WO3-BiVO4NFHs electrode possessed the good reproducibility, stability, and repeatability towards EDA chemical. To the best of our knowledge, for the first time, the fabricated chemical sensor fabricated with WO3-BiVO4NFHs electrode could be promising electrode materials to identify dangerous chemicals at very low concentration in environment. Importantly, the fabricated chemical sensor can be effective for environmental monitoring.

研究了单步水热法制备WO3-BiVO4-纳米片异质结构(NFHs)。通过对WO3-BiVO4的晶相和结构行为分析,可以得到晶体质量较好的WO3-BiVO4 NFHs。显微镜下观察,制备的WO3-BiVO4呈现出均匀、明显的纳米片状结构。利用广泛密度泛函理论(DFT)从层能、电荷密度、态密度(DOS)和能带结构等方面考察了制备的WO3-BiVO4 NFHs的电子结构和能带结构。将合成的WO3-BiVO4 NFHs用作检测乙二胺(EDA)化学物质的传感电极,其灵敏度为~318.52 mA。mM-1cm-2,动态范围为1 μM -1 mM,检出限(LOD)为~94.51 nM,保留系数为~0.9929。WO3-BiVO4 NFHs电极对EDA化学具有良好的重现性、稳定性和可重复性。据我们所知,用WO3-BiVO4 NFHs电极制备的化学传感器首次成为识别环境中极低浓度危险化学物质的极有前途的电极材料。重要的是,该化学传感器可以有效地用于环境监测。 。
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引用次数: 0
Surface induced crystallization/amorphization of phase change materials. 相变材料的表面诱导结晶/非晶化。
IF 2.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-01-15 DOI: 10.1088/1361-6528/ada568
Mahdi Javanbakht, Sajjad Mohebbi, Hamed Attariani

Surface-induced crystallization/amorphization of a Germanium-antimony-tellurium nanolayer is investigated using the phase field model. A Ginzburg-Landau (GL) equation introduces an external surface layer (ESL) within which the surface energy and elastic properties are adequately distributed. Next, the coupled GL and elasticity equations for the crystallization/ amorphization are solved. For the initial surface crystalline nucleus, unphysical crystallization along the ESL appears for the ESL widthΔξ⩾2nmwhile oval growth occurs forΔξ⩽1nm. The ESL results in a faster surface nucleus growth than the sharp surface model but does not affect the crystallization rate inside the bulk. Initial homogeneous conditions cause a simultaneous crystallization in the bulk and later in the ESL. The ESL effect on amorphization is studied to determine the ESL width more precisely. For both the initial amorphous nucleus and homogenous conditions, the amorphization temperature shows a reduction from the sharp surface model to the ESL model withΔξ=0.5nmand then remains almost constant for largerΔξ. Combining the above results gives0.5⩽Δξ⩽1nmas a proper range for the ESL width. The ratio of the effective ESL width to the interface width (Δsat/Δη) and the ratio of the difference between the surface energies of transforming phases to the surface energy of the initial phase (Δγ/γin) are considered crucial parameters in determining the ESL effect on the phase transformation and a linear relation asΔsat/Δη≅6.235Δγ/γinis found based on current and previous works, which can help estimate the effective ESL width for any surface-induced transformations.

采用相场模型研究了锗锑碲(GST)纳米层的表面诱导结晶/非晶化。金兹堡-朗道(GL)方程引入了外面层(ESL),在该外面层内表面能和弹性性能得到了合理的分布。其次,求解了结晶/非晶化的GL和弹性耦合方程。对于初始表面晶核,当晶核宽度Δ≥2时,晶核沿晶核方向出现非物理结晶,当晶核宽度Δ≤1时,晶核沿晶核方向出现椭圆形生长。ESL导致表面核的生长速度比尖锐表面模型快,但不影响体内的结晶速率。初始均质条件导致在体中和后来在ESL中同时结晶。研究了非晶化过程中的ESL效应,以更精确地确定ESL宽度。在初始非晶核和均匀核条件下,非晶化温度从尖表面模型下降到Δ = 0.5时的ESL模型,然后在较大Δ时几乎保持不变。综合以上结果得出0.5≤Δ≤1为ESL宽度的合适范围。有效ESL宽度的比值界面宽度(∆⁄Δ)的比率之间的区别的表面能量转换阶段的表面能初始阶段(Δ⁄)是至关重要的参数在确定ESL影响相位变换和线性关系∆⁄Δ≅6.235Δ⁄发现基于当前和以前的作品可用于估算有效的任何表面诱导ESL宽度转换强生# xD。
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引用次数: 0
Spontaneous heat current and ultra-high thermal rectification in asymmetric graphene: a molecular dynamics simulation. 不对称石墨烯中的自发热流和超高热整流:分子动力学模拟。
IF 2.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-01-13 DOI: 10.1088/1361-6528/ada960
Farrokh Yousefi, Omid Farzadian, Mehdi Shafiee

Non-equilibrium molecular dynamics (NEMD) simulations reveal the existence of a spontaneous heat current (SHC) in the absence of a temperature gradient and demonstrate ultra-high thermal rectification in asymmetric trapezoid-shaped graphene. These unique properties have potential applications in power generation and thermal circuits, functioning as thermal diodes. Our findings also show the presence of negative and zero thermal conductivity in this system. The negative thermal conductivity could enable the design of a conductive heat machine that pumps heat from the cold side to the hot side without additional energy consumption, functioning as a "full-free refrigerator." Meanwhile, zero thermal conductivity paves the way for the development of high-efficiency thermoelectric devices. Simulations were performed in two scenarios: with hydrogenated edges and without them. To ensure the reliability of the results, Reactive Empirical Bond Order and Tersoff potentials were employed. Finally, we examined how the SHC and the temperature difference at which the heat current is zero depend on the sample length, system width, and system temperature.

非平衡分子动力学(NEMD)模拟揭示了在没有温度梯度的情况下自发热流(SHC)的存在,并证明了不对称梯形石墨烯中的超高热整流。这些独特的特性在发电和热电路中有潜在的应用,作为热二极管。我们的研究结果还表明,该系统中存在负导热系数和零导热系数。负导热系数可以使设计一种导热机器成为可能,这种机器可以在不消耗额外能量的情况下将热量从冷侧泵到热侧,起到“全无冰箱”的作用。同时,零导热系数为高效热电器件的发展铺平了道路。在两种情况下进行了模拟:有氢化边缘和没有氢化边缘。为了保证结果的可靠性,采用了反应经验键阶和Tersoff势。最后,我们研究了SHC和热流为零时的温差如何取决于样品长度、系统宽度和系统温度。
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引用次数: 0
Infrared photoresponse of GeSiSn p-i-n photodiodes based on quantum dots, quantum wells, pseudomorphic and relaxed layers. 基于量子点、量子阱、拟态层和弛豫层的 GeSiSn pi-n 光电二极管的红外光响应。
IF 2.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-01-13 DOI: 10.1088/1361-6528/ada962
Vyacheslav Alexeyevich Timofeev, Ilya Skvortsov, Vladimir Ivanovich Mashanov, Aleksei A Bloshkin, Ivan Dmitrievich Loshkarev, Victor V Kirienko, Timur Maratovich Zalyalov, Kirill Lozovoy

Structural and photoelectric properties of p-i-n photodiodes based on GeSiSn/Si multiple quantum dots both on Si and silicon-on-insulator (SOI) substrates were investigated. Elastic strained state of grown films was demonstrated by x-ray diffractometry. Annealing of p-i-n structures before the mesa fabrication can improve the ideality factor of current-voltage characteristics. The lowest dark current density of p-i-n photodiodes based on quantum dots at the reverse bias of 1 V reaches the value of 0.8 mA/cm2. The cutoff wavelength shifts to the long-wavelength region with the Sn content increase. Maximum cutoff wavelength value is found to be 2.6 μm. Moreover, multilayer periodic structures with GeSiSn/Ge quantum wells and GeSiSn relaxed layers on Ge substrates were obtained. Reciprocal space maps were used to study the strained state of GeSiSn layers. The optimal growth parameters were determined to obtain slightly relaxed GeSiSn layers. Designed p-i-n photodiodes based on these structures demonstrated the minimal dark current density of 0.7 mA/cm2 and the cutoff wavelength of about 2 μm.

研究了基于GeSiSn/Si多量子点在硅和绝缘体上硅(SOI)衬底上的p-i-n光电二极管的结构和光电性能。用x射线衍射证实了生长膜的弹性应变状态。在制作台面前对p-i-n结构进行退火处理可以提高电流-电压特性的理想因数。基于量子点的p-i-n光电二极管在反向偏置1 V时的最低暗电流密度达到0.8 mA/cm2。随着Sn含量的增加,截止波长向长波区偏移。最大截止波长为2.6 μm。此外,在Ge衬底上获得了GeSiSn/Ge量子阱和GeSiSn松弛层的多层周期结构。利用互易空间映射法研究GeSiSn层的应变状态。确定最佳生长参数,获得微松弛GeSiSn层。基于这些结构设计的p-i-n光电二极管的最小暗电流密度为0.7 mA/cm2,截止波长约为2 μm。
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引用次数: 0
Coupling of single nanodiamonds hosting SiV color centers to plasmonic double bowtie microantennas. 将承载 SiV 色心的单个纳米金刚石与等离子双弓形微天线耦合。
IF 2.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-01-13 DOI: 10.1088/1361-6528/ada961
Sarah Lindner, Nancy Rahbany, Christoph Pauly, Laia Gines, Soumen Mandal, Oliver A Williams, Andreas Muzha, Anke Krueger, Renaud Bachelot, Christophe Couteau, Christoph Becher

Color centers are promising single-photon emitters owing to their operation at room temperature and high photostability. In particular, using nanodiamonds as a host material is of interest for sensing and metrology. Furthermore, being a solid-state system allows for incorporation to photonic systems to tune both the emission intensity and photoluminescence spectrum and therefore adapt the individual color center to desired properties. We show successful coupling of a single nanodiamond hosting silicon-vacancy color centers to a plasmonic double bowtie antenna structure. To predict the spectrum of the coupled system, the photoluminescence spectrum of the SiV centers was measured before the coupling process and convoluted with the antenna resonance spectrum. After transferring the nanodiamond to the antenna the combined spectrum was measured again. The measurement agrees well with the calculated prediction of the coupled system and therefore confirms successful coupling.

色心是一种很有前途的单光子发射体,具有室温工作和高光稳定性的特点。特别是,使用纳米金刚石作为主体材料是感测和计量学的兴趣。此外,作为一个固态系统,允许结合光子系统来调整发射强度和光致发光光谱,从而使单个色中心适应所需的特性。我们展示了单个纳米金刚石承载硅空位色中心与等离子体双领结天线结构的成功耦合。为了预测耦合系统的光谱,在耦合前测量了SiV中心的光致发光光谱,并与天线共振光谱进行了卷积。将纳米金刚石转移到天线后,再次测量组合频谱。测量结果与耦合系统的预测结果吻合较好,证明了耦合是成功的。
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引用次数: 0
Combined feature of enhanced stability and multi-level switching observed in TiN/Ta2O5/Ag-NPs/ITO/PET structure. 在TiN/Ta2O5/Ag-NPs/ITO/PET结构中观察到增强的稳定性和多级开关的结合特征。
IF 2.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-01-13 DOI: 10.1088/1361-6528/ada963
Su Hu, Kang'an Jiang, Yunyang He, Peng Bao, Nan Su, Xinhui Zhao, Hui Wang

Both stability and multi-level switching are crucial performance aspects for resistive random-access memory (RRAM), each playing a significant role in improving overall device performance. In this study, we successfully integrate these two features into a single RRAM configuration by embedding Ag-nanoparticles (Ag-NPs) into the TiN/Ta2O5/ITO structure. The device exhibits substantially lower switching voltages, a larger switching ratio, and multi-level switching phenomena compared to many other nanoparticle-embedded devices. We attribute it to the embedded Ag-NPs effectively switching the mechanism of conductive filaments and the controlled distribution of Ag-NPs facilitates the occurrence of multi-level switching. Additionally, the fabricated structure demonstrated an impressive optical transmittance of nearly 85%. Undoubtedly, this combined feature of RRAM not only enhances stability but also enables multi-level switching, thereby demonstrating an approach to fabricating versatile and practical electronic devices aimed at boosting storage capacity and speed. .

稳定性和多电平开关都是电阻式随机存取存储器(RRAM)的关键性能方面,它们在提高整体器件性能方面都起着重要作用。在这项研究中,我们通过将银纳米颗粒(Ag-NPs)嵌入到TiN/Ta2O5/ITO结构中,成功地将这两个特征集成到单个RRAM配置中。与许多其他纳米颗粒嵌入器件相比,该器件具有显著降低的开关电压,更大的开关比和多级开关现象。我们将其归因于嵌入的Ag-NPs有效地切换了导电丝的机制,Ag-NPs的可控分布促进了多级开关的发生。此外,制造的结构显示出令人印象深刻的近85%的光学透过率。毫无疑问,RRAM的这种组合特性不仅提高了稳定性,而且还实现了多级开关,从而展示了一种制造多功能实用电子设备的方法,旨在提高存储容量和速度。 。
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引用次数: 0
Flexible solid-state supercapacitors based on biowaste-derived activated carbon and nanomaterials for enhanced performance. 基于生物废物衍生的活性炭和纳米材料的柔性固态超级电容器,以提高性能。
IF 2.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-01-10 DOI: 10.1088/1361-6528/ada0c0
Dilara Koroglu, Haluk Bingol, Betul Uralcan

Supercapacitors are energy storage devices with long cycle life that can harvest and deliver high power. This makes them attractive for a broad range of applications including flexible and lightweight wearable consumer electronics. In this work, we fabricate flexible solid-state supercapacitors with improved capacitance and cycle life. We synthesize activated carbon (AC) from cabbage leaves as a low cost, biowaste-derived active electrode material. To improve mechanical flexibility and conductivity, we incorporate reduced graphene oxide sheets (RGO) and carbon quantum dots (CQDs) into the electrodes. We show that at the optimum AC/RGO/CQD composition, the capacitance of the solid-state supercapacitor is maximized while its scan rate dependence and bending stability are simultaneously improved. We envision that this approach offers significant potential for delivering efficient energy storage devices for consumer electronics.

超级电容器是一种具有长循环寿命的能量存储装置,可以收集和提供高功率。这使得它们对广泛的应用具有吸引力,包括灵活轻便的可穿戴消费电子产品。在这项工作中,我们制造了具有改进电容和循环寿命的柔性固态超级电容器。我们从白菜叶中合成活性炭(AC)作为一种低成本的生物废物来源的活性电极材料。为了提高机械柔韧性和导电性,我们在电极中加入了还原氧化石墨烯片(RGO)和碳量子点(CQDs)。研究表明,在最佳AC/RGO/CQD组合下,固态超级电容器的电容最大,同时其扫描速率依赖性和弯曲稳定性也得到了改善。我们设想这种方法为为消费电子产品提供高效的能量存储设备提供了巨大的潜力。
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引用次数: 0
Cross-alignment of silver nanowires network for efficient nanowelding. 高效纳米焊接银纳米线网络的交叉对准。
IF 2.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-01-10 DOI: 10.1088/1361-6528/ada449
Chao Wang, Bo Song, Xin Zhai, Che Zhang, Mengyang Du, Yanqin Miao, Peng Dong

The performance of silver nanowire (AgNW) network flexible transparent electrodes is limited by large contact resistance, making it necessary to perform nanowelding to improve conductivity of the network. However, not all nanowire junctions can be welded. Our work indicates that the welding kinetics between nanowires depend on the crossing angle, with higher surface diffusion velocity prone to welding and fracture at nanowire junctions of crossing angles close to 90 degrees. The impact of nanowire crossing angles on the welding process makes it difficult to achieve simultaneous welding of random AgNWs networks. To address this issue, we adopted an improved Meyer rod coating method to prepared a cross-aligned nanowire network based on a layer-by-layer assembly strategy. Compared to randomly distributed AgNWs networks (11.17 Ω sq-1, 85.2%), the cross-aligned AgNWs network achieved simultaneous welding of nanowire junctions during thermal annealing, further enhancing the optoelectronic performance (10.8 Ω sq-1, 90.3%) of the AgNWs network, resulting in a superior figure of merit value of 421.

银纳米线(AgNWs)网络柔性透明电极的性能受到较大接触电阻的限制,因此必须进行纳米焊接以提高网络的导电性。然而,并不是所有的纳米线结都可以焊接。我们的研究表明,纳米线之间的焊接动力学取决于交叉角,在接近90度的纳米线连接处,表面扩散速度较高,容易发生焊接和断裂。由于纳米线交叉角对焊接过程的影响,使得随机AgNWs网络难以实现同时焊接。为了解决这一问题,我们采用改进的Meyer棒涂层方法制备了基于逐层组装策略的交叉排列纳米线网络。与随机分布的AgNWs网络(11.17Ω/sq, 85.2%)相比,交叉排列的AgNWs网络在热退火过程中实现了纳米线结的同时焊接,进一步提高了AgNWs网络的光电性能(10.8Ω/sq, 90.3%),从而获得了421. 的优值。
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引用次数: 0
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