Pub Date : 2025-12-18DOI: 10.1038/s41928-025-01513-z
Claudio Pacchierotti
An 18-gram haptic feedback ring can deliver powerful force sensations while detecting multi-directional touch inputs, potentially transforming the way we can interact with digital environments.
{"title":"Haptic feedback that rings true","authors":"Claudio Pacchierotti","doi":"10.1038/s41928-025-01513-z","DOIUrl":"10.1038/s41928-025-01513-z","url":null,"abstract":"An 18-gram haptic feedback ring can deliver powerful force sensations while detecting multi-directional touch inputs, potentially transforming the way we can interact with digital environments.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 12","pages":"1142-1143"},"PeriodicalIF":40.9,"publicationDate":"2025-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145771117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-18DOI: 10.1038/s41928-025-01515-x
Sunju Kang, Mustafa Mete, Srinivas Gandla, Dila Türkmen, Rohit Kadungamparambil John, Merve Acer Kalafat, Sunkook Kim, Jamie Paik
Wearable human–machine interfaces could provide immersive, multisensory interactions, turning everyday items into smart haptic devices for virtual and augmented reality. However, the development of tactile wearables with kinaesthetic feedback remains limited by the size and weight of the devices, which restricts portability and comfort. Here we report a haptic ring that weighs 18 g and offers three-degrees-of-freedom force sensing and feedback. The system has an origami-inspired structural base that provides efficient and compact force transmission, and a soft force-sensing skin capable of simultaneously detecting shear and normal forces. The force-sensing skin is made by combining a topology-optimized, laser-patterned layer that has pyramid microstructures with a layer with four resistive pixels, an approach that ensures linear sensitivity and a rapid response time. The ring, which is powered by soft pneumatic actuators and integrated with inkjet-printed bending sensors, can provide kinaesthetic force feedback of up to 6.5 N. A haptic ring that has a soft multiaxis force-sensing skin capable of simultaneously detecting shear and normal force can provide a kinaesthetic force feedback of up to 6.5 N.
{"title":"An 18-g haptic feedback ring with a three-axis force-sensing skin","authors":"Sunju Kang, Mustafa Mete, Srinivas Gandla, Dila Türkmen, Rohit Kadungamparambil John, Merve Acer Kalafat, Sunkook Kim, Jamie Paik","doi":"10.1038/s41928-025-01515-x","DOIUrl":"10.1038/s41928-025-01515-x","url":null,"abstract":"Wearable human–machine interfaces could provide immersive, multisensory interactions, turning everyday items into smart haptic devices for virtual and augmented reality. However, the development of tactile wearables with kinaesthetic feedback remains limited by the size and weight of the devices, which restricts portability and comfort. Here we report a haptic ring that weighs 18 g and offers three-degrees-of-freedom force sensing and feedback. The system has an origami-inspired structural base that provides efficient and compact force transmission, and a soft force-sensing skin capable of simultaneously detecting shear and normal forces. The force-sensing skin is made by combining a topology-optimized, laser-patterned layer that has pyramid microstructures with a layer with four resistive pixels, an approach that ensures linear sensitivity and a rapid response time. The ring, which is powered by soft pneumatic actuators and integrated with inkjet-printed bending sensors, can provide kinaesthetic force feedback of up to 6.5 N. A haptic ring that has a soft multiaxis force-sensing skin capable of simultaneously detecting shear and normal force can provide a kinaesthetic force feedback of up to 6.5 N.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 12","pages":"1234-1246"},"PeriodicalIF":40.9,"publicationDate":"2025-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145771118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-17DOI: 10.1038/s41928-025-01499-8
Najam U Sakib, Chen Chen, Lei Ding, Yang Yang, Joan M. Redwing, Saptarshi Das
As silicon reaches its scaling limits, two-dimensional materials are a promising route for further transistor miniaturization. Advances in contact engineering, channel length (LCH) scaling and high-κ dielectric integration have led to impressive two-dimensional transistor performance, but challenges remain, including high off-state leakage currents due to negative threshold voltage values and high contact resistances as contact length (LC) is reduced. A monolayer-centric approach has also limited the exploration of the advantages that few-layer (two to three) materials may offer. Here we show that industry-compatible metal–organic chemical vapour deposition can be used to grow wafer-scale molybdenum disulfide (MoS2) and fabricate transistors with LCH and LC scaled to 35 nm and 30 nm, respectively. We integrate a high-κ gate dielectric with an equivalent oxide thickness of less than 2.5 nm and create monolayer, bilayer and trilayer MoS2 transistors. The scaled trilayer transistors exhibit an on-state current of 220 µA µm−1, a positive threshold voltage and off-state current below 10 pA µm−1 at zero gate bias. Trilayer MoS2 transistors show enhanced performance compared with monolayer devices at scaled LC due to a shorter transfer length and lower Schottky barrier height. To illustrate the reliability and reproducibility of the approach, we provide statistics for approximately 1,000 scaled devices. Molybdenum disulfide transistors made with an industry-compatible metal–organic chemical vapour deposition method can exhibit both high on-state and low off-state currents with a channel length of 35 nm and contact length of 30 nm.
当硅达到其缩放极限时，二维材料是进一步小型化晶体管的有希望的途径。触点工程、通道长度（LCH）缩放和高κ介电体集成方面的进步已经带来了令人印象深刻的二维晶体管性能，但挑战仍然存在，包括由于负阈值电压值和触点长度（LC）减少而产生的高断开状态泄漏电流和高接触电阻。以单层为中心的方法也限制了对少层（两到三层）材料可能提供的优势的探索。在这里，我们证明了工业兼容的金属有机化学气相沉积可以用于生长晶圆级二硫化钼（MoS2）和制造LCH和LC分别缩放到35 nm和30 nm的晶体管。我们集成了等效氧化物厚度小于2.5 nm的高κ栅极电介质，并创建了单层，双层和三层MoS2晶体管。该三层晶体管在零栅极偏置下具有220 μ A μ m−1的导通电流、正阈值电压和低于10 pA μ m−1的关断电流。由于传输长度较短，肖特基势垒高度较低，三层MoS2晶体管在比例LC下的性能优于单层器件。为了说明该方法的可靠性和可重复性，我们提供了大约1,000个缩放设备的统计数据。
{"title":"High-performance molybdenum disulfide transistors with channel and contact lengths below 35 nm","authors":"Najam U Sakib, Chen Chen, Lei Ding, Yang Yang, Joan M. Redwing, Saptarshi Das","doi":"10.1038/s41928-025-01499-8","DOIUrl":"10.1038/s41928-025-01499-8","url":null,"abstract":"As silicon reaches its scaling limits, two-dimensional materials are a promising route for further transistor miniaturization. Advances in contact engineering, channel length (LCH) scaling and high-κ dielectric integration have led to impressive two-dimensional transistor performance, but challenges remain, including high off-state leakage currents due to negative threshold voltage values and high contact resistances as contact length (LC) is reduced. A monolayer-centric approach has also limited the exploration of the advantages that few-layer (two to three) materials may offer. Here we show that industry-compatible metal–organic chemical vapour deposition can be used to grow wafer-scale molybdenum disulfide (MoS2) and fabricate transistors with LCH and LC scaled to 35 nm and 30 nm, respectively. We integrate a high-κ gate dielectric with an equivalent oxide thickness of less than 2.5 nm and create monolayer, bilayer and trilayer MoS2 transistors. The scaled trilayer transistors exhibit an on-state current of 220 µA µm−1, a positive threshold voltage and off-state current below 10 pA µm−1 at zero gate bias. Trilayer MoS2 transistors show enhanced performance compared with monolayer devices at scaled LC due to a shorter transfer length and lower Schottky barrier height. To illustrate the reliability and reproducibility of the approach, we provide statistics for approximately 1,000 scaled devices. Molybdenum disulfide transistors made with an industry-compatible metal–organic chemical vapour deposition method can exhibit both high on-state and low off-state currents with a channel length of 35 nm and contact length of 30 nm.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 12","pages":"1201-1210"},"PeriodicalIF":40.9,"publicationDate":"2025-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145765584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-17DOI: 10.1038/s41928-025-01500-4
Mingyi Du, Weisheng Li, Guangkai Xiong, Chunsong Zhao, Fuchen Hou, Weizhuo Gan, Xiaoshu Gong, Ningmu Zou, Lei Liu, Xilu Zou, Taotao Li, Wenjie Sun, Dongxu Fan, Zhihao Yu, Xuecou Tu, Yuan Gao, Haoliang Shen, Hao Qiu, Liang Ma, Jinlan Wang, Yuefeng Nie, Li Tao, Jian-Bin Xu, Junhao Lin, Jeffrey Xu, Yi Shi, Xinran Wang
Transition metal dichalcogenides are a potential alternative to silicon and could be used to create transistors with a contacted gate pitch below 40 nm as required by the ångström-node transistor technology. However, it remains challenging to maintain an ohmic contact when the contact length is reduced to less than 20 nm. Here we show that crystalline semi-metallic antimony contacts can be epitaxially grown on molybdenum disulfide (MoS2) by molecular beam epitaxy, creating ohmic contacts with a resistance of 98 Ω µm at a contact length of 18 nm. We use the contacts to build scaled field-effect transistors with a contacted gate pitch of 40 nm with drive currents of 0.85 mA µm−1, 0.95 mA µm−1 and 1.08 mA µm−1 for monolayer, bilayer and trilayer MoS2 channels, respectively. Statistical analysis of transistor arrays confirms that the crystalline antimony contacts are reproducible and stable. Semi-metallic single crystals of antimony can be deposited using molecular beam epitaxy on molybdenum disulfide to create ohmic contacts with resistance of under 100 Ω µm at a contact length of 18 nm.
{"title":"Scaled crystalline antimony ohmic contacts for two-dimensional transistors","authors":"Mingyi Du, Weisheng Li, Guangkai Xiong, Chunsong Zhao, Fuchen Hou, Weizhuo Gan, Xiaoshu Gong, Ningmu Zou, Lei Liu, Xilu Zou, Taotao Li, Wenjie Sun, Dongxu Fan, Zhihao Yu, Xuecou Tu, Yuan Gao, Haoliang Shen, Hao Qiu, Liang Ma, Jinlan Wang, Yuefeng Nie, Li Tao, Jian-Bin Xu, Junhao Lin, Jeffrey Xu, Yi Shi, Xinran Wang","doi":"10.1038/s41928-025-01500-4","DOIUrl":"10.1038/s41928-025-01500-4","url":null,"abstract":"Transition metal dichalcogenides are a potential alternative to silicon and could be used to create transistors with a contacted gate pitch below 40 nm as required by the ångström-node transistor technology. However, it remains challenging to maintain an ohmic contact when the contact length is reduced to less than 20 nm. Here we show that crystalline semi-metallic antimony contacts can be epitaxially grown on molybdenum disulfide (MoS2) by molecular beam epitaxy, creating ohmic contacts with a resistance of 98 Ω µm at a contact length of 18 nm. We use the contacts to build scaled field-effect transistors with a contacted gate pitch of 40 nm with drive currents of 0.85 mA µm−1, 0.95 mA µm−1 and 1.08 mA µm−1 for monolayer, bilayer and trilayer MoS2 channels, respectively. Statistical analysis of transistor arrays confirms that the crystalline antimony contacts are reproducible and stable. Semi-metallic single crystals of antimony can be deposited using molecular beam epitaxy on molybdenum disulfide to create ohmic contacts with resistance of under 100 Ω µm at a contact length of 18 nm.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 12","pages":"1191-1200"},"PeriodicalIF":40.9,"publicationDate":"2025-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145765609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-17DOI: 10.1038/s41928-025-01501-3
Wei Zeng, Su-Ting Han, Ye Zhou
Two papers report molybdenum disulfide transistors with highly scaled channel and contact lengths, which is achieved through multilayer channel optimization in one case and molecular beam epitaxy deposition of single-crystal antimony contacts in the other.
{"title":"Towards 1-nm-node electronics with two-dimensional transistors","authors":"Wei Zeng, Su-Ting Han, Ye Zhou","doi":"10.1038/s41928-025-01501-3","DOIUrl":"10.1038/s41928-025-01501-3","url":null,"abstract":"Two papers report molybdenum disulfide transistors with highly scaled channel and contact lengths, which is achieved through multilayer channel optimization in one case and molecular beam epitaxy deposition of single-crystal antimony contacts in the other.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 12","pages":"1138-1139"},"PeriodicalIF":40.9,"publicationDate":"2025-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145771119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-16DOI: 10.1038/s41928-025-01517-9
Haoxuan Sun, Chen Li, Liang Li, Xiang Zhang, Jiajun Luo, Nur Najihah binti Ahmad Rasid, Nur Wardina Syahirah binti Mohamad Fadil, Maria Vasilopoulou, Abd. Rashid bin Mohd Yusoff
The capabilities of photodetectors based on halide perovskites have advanced rapidly in recent years, with their typical metrics—including responsivity, detectivity and response speed—surpassing those of silicon detectors. However, concerns regarding reliability and manufacturing yield limit commercial interest in replacing established technology with perovskite devices in conventional applications such as communications and imaging. A promising initial step towards the broader commercialization of perovskite detectors lies in customized device architectures for specific applications or products, an approach that can fully leverage the compositional versatility and integration capabilities of perovskite materials. Here we explore the development of traditional standardized perovskite photodetectors and consider the emergence of customized perovskite photodetectors, including shape-customized detectors, selective photodetectors, multidimensional photodetectors, dynamic-tracking detectors and neuromorphic visual sensors. We also consider the key challenges that need to be addressed to deliver application-specific devices for commercial applications. This Review examines perovskite photodetector technology, exploring the development of standardized perovskite photodetectors and the emergence of customized perovskite photodetectors, including shape-customized detectors, selective photodetectors, multidimensional photodetectors, dynamic-tracking detectors and neuromorphic visual sensors.
{"title":"The development of customized perovskite photodetectors","authors":"Haoxuan Sun, Chen Li, Liang Li, Xiang Zhang, Jiajun Luo, Nur Najihah binti Ahmad Rasid, Nur Wardina Syahirah binti Mohamad Fadil, Maria Vasilopoulou, Abd. Rashid bin Mohd Yusoff","doi":"10.1038/s41928-025-01517-9","DOIUrl":"10.1038/s41928-025-01517-9","url":null,"abstract":"The capabilities of photodetectors based on halide perovskites have advanced rapidly in recent years, with their typical metrics—including responsivity, detectivity and response speed—surpassing those of silicon detectors. However, concerns regarding reliability and manufacturing yield limit commercial interest in replacing established technology with perovskite devices in conventional applications such as communications and imaging. A promising initial step towards the broader commercialization of perovskite detectors lies in customized device architectures for specific applications or products, an approach that can fully leverage the compositional versatility and integration capabilities of perovskite materials. Here we explore the development of traditional standardized perovskite photodetectors and consider the emergence of customized perovskite photodetectors, including shape-customized detectors, selective photodetectors, multidimensional photodetectors, dynamic-tracking detectors and neuromorphic visual sensors. We also consider the key challenges that need to be addressed to deliver application-specific devices for commercial applications. This Review examines perovskite photodetector technology, exploring the development of standardized perovskite photodetectors and the emergence of customized perovskite photodetectors, including shape-customized detectors, selective photodetectors, multidimensional photodetectors, dynamic-tracking detectors and neuromorphic visual sensors.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 12","pages":"1170-1181"},"PeriodicalIF":40.9,"publicationDate":"2025-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145771120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-15DOI: 10.1038/s41928-025-01520-0
Savannah Eisner
An ultrawide-bandgap power module that is capable of 1,000 V and 200 A switching can be created by co-optimizing electrical, thermal and mechanical aspects of both the device and the package.
{"title":"Powering the ultrawide-bandgap era","authors":"Savannah Eisner","doi":"10.1038/s41928-025-01520-0","DOIUrl":"10.1038/s41928-025-01520-0","url":null,"abstract":"An ultrawide-bandgap power module that is capable of 1,000 V and 200 A switching can be created by co-optimizing electrical, thermal and mechanical aspects of both the device and the package.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 12","pages":"1128-1129"},"PeriodicalIF":40.9,"publicationDate":"2025-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145771124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-15DOI: 10.1038/s41928-025-01530-y
Owain Vaughan
Maheera Abdul Ghani, winner of the 2025 Nature Awards for Inspiring Women in Science and CEO of Cambridge Dielectrix, tells Nature Electronics about her outreach work with WinSci Pakistan and the challenges of developing dielectric technology for two-dimensional semiconductors.
Maheera Abdul Ghani是2025年自然科学激励女性奖的获得者，也是剑桥Dielectrix公司的首席执行官，她向《自然电子》讲述了她与WinSci巴基斯坦的推广工作以及开发二维半导体介质技术的挑战。
{"title":"Scaling potential in outreach and electronics","authors":"Owain Vaughan","doi":"10.1038/s41928-025-01530-y","DOIUrl":"10.1038/s41928-025-01530-y","url":null,"abstract":"Maheera Abdul Ghani, winner of the 2025 Nature Awards for Inspiring Women in Science and CEO of Cambridge Dielectrix, tells Nature Electronics about her outreach work with WinSci Pakistan and the challenges of developing dielectric technology for two-dimensional semiconductors.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 12","pages":"1120-1121"},"PeriodicalIF":40.9,"publicationDate":"2025-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145771123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-12DOI: 10.1038/s41928-025-01545-5
Matthew Parker
{"title":"GaN chiplets straight from the wafer","authors":"Matthew Parker","doi":"10.1038/s41928-025-01545-5","DOIUrl":"10.1038/s41928-025-01545-5","url":null,"abstract":"","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 12","pages":"1127-1127"},"PeriodicalIF":40.9,"publicationDate":"2025-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145808697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-12DOI: 10.1038/s41928-025-01527-7
Shinji Yuasa
Magnetic tunnel junctions based on magnesium oxide are used in high-density hard disk drives and form the basis of storage in data centres. Shinji Yuasa recounts how the first devices suitable for industrial application were developed.
{"title":"How we made the magnesium oxide magnetic tunnel junction","authors":"Shinji Yuasa","doi":"10.1038/s41928-025-01527-7","DOIUrl":"10.1038/s41928-025-01527-7","url":null,"abstract":"Magnetic tunnel junctions based on magnesium oxide are used in high-density hard disk drives and form the basis of storage in data centres. Shinji Yuasa recounts how the first devices suitable for industrial application were developed.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 12","pages":"1289-1290"},"PeriodicalIF":40.9,"publicationDate":"2025-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145808775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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