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How we made the 1,000 V silicon carbide Schottky diode 我们如何制造 1,000 V 碳化硅肖特基二极管

IF 33.7 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics

Pub Date : 2024-09-30 DOI: 10.1038/s41928-024-01252-7

Tsunenobu Kimoto

Silicon carbide power devices are an important component in a variety of technologies. Tsunenobu Kimoto recounts how the first 1 kV silicon carbide Schottky diodes were created.

碳化硅功率器件是各种技术的重要组成部分。Tsunenobu Kimoto 讲述了第一个 1 kV 碳化硅肖特基二极管是如何诞生的。

引用次数: 0

Electrical switching of the perpendicular Néel order in a collinear antiferromagnet 对偶反铁磁体中垂直奈尔阶的电开关

IF 33.7 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics

Pub Date : 2024-09-30 DOI: 10.1038/s41928-024-01248-3

Wenqing He, Tianyi Zhang, Yongjian Zhou, Caihua Wan, Hao Wu, Baoshan Cui, Jihao Xia, Ran Zhang, Tengyu Guo, Peng Chen, Mingkun Zhao, Leina Jiang, Alexander Grutter, Purnima P. Balakrishnan, Andrew J. Caruana, Christy J. Kinane, Sean Langridge, Guoqiang Yu, Cheng Song, Xiufeng Han

Spintronics is based on the electrical manipulation of magnetic order through current-induced spin torques. In collinear antiferromagnets with perpendicular magnetic anisotropy, binary states can be directly encoded in their opposite Néel order. The negligible stray fields and terahertz spin dynamics of these systems mean that they could potentially be used to develop ultrafast memory devices with high integration density. Here we report electrical switching of the perpendicular Néel order in a collinear antiferromagnet. We show that the Néel order in a prototypical collinear antiferromagnetic insulator—chromium oxide (Cr2O3)—can be switched by the spin–orbit torque with a low current density (5.8 × 106 A cm−2) and read out by the anomalous Hall effect. We also show that the magnetization of a Y3Fe5O12 film exchange-coupled to the Cr2O3 layer can be electrically switched, confirming the Néel order switching of the Cr2O3 layer. The perpendicular Néel order in a collinear antiferromagnetic insulator—chromium oxide—can be switched by 180° via the spin–orbit torque with a low current density of 5.8 × 106 A cm−2 and read out via the anomalous Hall effect.

自旋电子学的基础是通过电流诱导的自旋力矩对磁序进行电子操纵。在具有垂直磁各向异性的对偶反铁磁体中，二元态可以直接被编码为其相反的奈尔阶。这些系统的杂散磁场和太赫兹自旋动力学可忽略不计，这意味着它们有可能被用于开发高集成度的超快存储器件。在这里，我们报告了在共轭反铁磁体中垂直奈尔阶的电开关。我们表明，在一个原型对偶反铁磁绝缘体--氧化铬（Cr2O3）--中的奈尔阶可以通过自旋轨道力矩以较低的电流密度（5.8 × 106 A cm-2）进行切换，并通过反常霍尔效应读出。我们还表明，与 Cr2O3 层交换耦合的 Y3Fe5O12 薄膜的磁化可以进行电切换，从而证实了 Cr2O3 层的奈尔阶切换。

{"title":"Electrical switching of the perpendicular Néel order in a collinear antiferromagnet","authors":"Wenqing He, Tianyi Zhang, Yongjian Zhou, Caihua Wan, Hao Wu, Baoshan Cui, Jihao Xia, Ran Zhang, Tengyu Guo, Peng Chen, Mingkun Zhao, Leina Jiang, Alexander Grutter, Purnima P. Balakrishnan, Andrew J. Caruana, Christy J. Kinane, Sean Langridge, Guoqiang Yu, Cheng Song, Xiufeng Han","doi":"10.1038/s41928-024-01248-3","DOIUrl":"10.1038/s41928-024-01248-3","url":null,"abstract":"Spintronics is based on the electrical manipulation of magnetic order through current-induced spin torques. In collinear antiferromagnets with perpendicular magnetic anisotropy, binary states can be directly encoded in their opposite Néel order. The negligible stray fields and terahertz spin dynamics of these systems mean that they could potentially be used to develop ultrafast memory devices with high integration density. Here we report electrical switching of the perpendicular Néel order in a collinear antiferromagnet. We show that the Néel order in a prototypical collinear antiferromagnetic insulator—chromium oxide (Cr2O3)—can be switched by the spin–orbit torque with a low current density (5.8 × 106 A cm−2) and read out by the anomalous Hall effect. We also show that the magnetization of a Y3Fe5O12 film exchange-coupled to the Cr2O3 layer can be electrically switched, confirming the Néel order switching of the Cr2O3 layer. The perpendicular Néel order in a collinear antiferromagnetic insulator—chromium oxide—can be switched by 180° via the spin–orbit torque with a low current density of 5.8 × 106 A cm−2 and read out via the anomalous Hall effect.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 11","pages":"975-983"},"PeriodicalIF":33.7,"publicationDate":"2024-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142329697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An update for brain–computer interfaces 脑机接口的最新进展

IF 33.7 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics

Pub Date : 2024-09-25 DOI: 10.1038/s41928-024-01257-2

Advances in sensors, electrodes and probes are helping to expand the capabilities of brain–computer interfaces.

传感器、电极和探针的进步有助于扩大脑机接口的功能。

引用次数: 0

Author Correction: A microspectrometer with dual-signal spectral reconstruction 作者更正：具有双信号光谱重建功能的显微光谱仪

IF 34.3 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics

Pub Date : 2024-09-24 DOI: 10.1038/s41928-024-01262-5

Xinchuan Du, Yang Wang, Yi Cui, Gaofeng Rao, Jianwen Huang, Xinrui Chen, Ting Zhou, Chunyang Wu, Zongyin Yang, Hanxiao Cui, Yicheng Zhao, Jie Xiong

Correction to: Nature Electronics https://doi.org/10.1038/s41928-024-01242-9, published online 17 September 2024.

更正为自然电子学》https://doi.org/10.1038/s41928-024-01242-9，2024 年 9 月 17 日在线发表。

引用次数: 0

A self-filtering liquid acoustic sensor for voice recognition 用于语音识别的自滤波液体声学传感器

IF 33.7 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics

Pub Date : 2024-09-23 DOI: 10.1038/s41928-024-01196-y

Xun Zhao, Yihao Zhou, Aaron Li, Jing Xu, Shreesh Karjagi, Edward Hahm, Lara Rulloda, Justin Li, John Hollister, Pirouz Kavehpour, Jun Chen

Wearable acoustic sensors can be used for voice recognition. However, the capabilities of such devices, which are typically based on solid materials, are often restricted by ambient noise, motion artefacts and low conformability to the skin. Here we report a liquid acoustic sensor for voice recognition. The approach is based on a three-dimensional oriented and ramified magnetic network structure of neodymium–iron–boron magnetic nanoparticles suspended in a carrier fluid, which behaves like a permanent magnet. The sensor can discriminate small pressures (0.9 Pa), has a high signal-to-noise ratio (69.1 dB) and provides self-filtering capabilities that can remove low-frequency biomechanical motion artefact (less than 30 Hz). We use the liquid acoustic sensor—together with a machine learning algorithm—to create a wearable voice recognition system that offers a recognition accuracy of 99% in a noisy environment. An acoustic sensor that is based on a network of magnetic nanoparticles suspended in a carrier fluid can be used—together with a machine learning algorithm—to create a wearable voice recognition system with an accuracy of 99% in a noisy environment.

可穿戴声学传感器可用于语音识别。然而，这类设备通常基于固体材料，其功能往往受到环境噪声、运动伪影和皮肤低顺应性的限制。在此，我们报告了一种用于语音识别的液体声学传感器。该方法基于悬浮在载液中的钕铁硼磁性纳米粒子的三维定向和柱状磁网络结构，其行为类似于永磁体。该传感器可分辨较小的压力（0.9 Pa），具有较高的信噪比（69.1 dB），并具有自滤波功能，可消除低频生物力学运动伪影（低于 30 Hz）。我们利用液体声学传感器和机器学习算法创建了一个可穿戴语音识别系统，该系统在嘈杂环境中的识别准确率高达 99%。

{"title":"A self-filtering liquid acoustic sensor for voice recognition","authors":"Xun Zhao, Yihao Zhou, Aaron Li, Jing Xu, Shreesh Karjagi, Edward Hahm, Lara Rulloda, Justin Li, John Hollister, Pirouz Kavehpour, Jun Chen","doi":"10.1038/s41928-024-01196-y","DOIUrl":"10.1038/s41928-024-01196-y","url":null,"abstract":"Wearable acoustic sensors can be used for voice recognition. However, the capabilities of such devices, which are typically based on solid materials, are often restricted by ambient noise, motion artefacts and low conformability to the skin. Here we report a liquid acoustic sensor for voice recognition. The approach is based on a three-dimensional oriented and ramified magnetic network structure of neodymium–iron–boron magnetic nanoparticles suspended in a carrier fluid, which behaves like a permanent magnet. The sensor can discriminate small pressures (0.9 Pa), has a high signal-to-noise ratio (69.1 dB) and provides self-filtering capabilities that can remove low-frequency biomechanical motion artefact (less than 30 Hz). We use the liquid acoustic sensor—together with a machine learning algorithm—to create a wearable voice recognition system that offers a recognition accuracy of 99% in a noisy environment. An acoustic sensor that is based on a network of magnetic nanoparticles suspended in a carrier fluid can be used—together with a machine learning algorithm—to create a wearable voice recognition system with an accuracy of 99% in a noisy environment.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 10","pages":"924-932"},"PeriodicalIF":33.7,"publicationDate":"2024-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142276886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Hybrid multimodal wearable sensors for comprehensive health monitoring 用于全面健康监测的混合多模态可穿戴传感器

IF 33.7 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics

Pub Date : 2024-09-23 DOI: 10.1038/s41928-024-01247-4

Kuldeep Mahato, Tamoghna Saha, Shichao Ding, Samar S. Sandhu, An-Yi Chang, Joseph Wang

Wearable bioelectronic sensors are often used for health monitoring but are typically limited to a few physical or chemical parameters, which hinders their ability to provide a complete health assessment. Recently, wearable sensor platforms have been developed that can simultaneously and continuously record multiple biophysical and biochemical signals. These devices take advantage of advances in electronic device fabrication and miniaturization, bioelectronic sensors, and flexible materials. However, compared with existing wearable systems, which mostly contain either biochemical or biophysical sensors, hybrid multimodal wearable patches present a number of distinct challenges for further advancement. Here, we examine the development of such hybrid multimodal wearable sensors and explore their potential applications in tracking the health and disease status of different users. We highlight the key biomarkers and vital signs (related to various pathophysiological conditions) that hybrid bioelectronic sensor systems must be designed around. We also explore how artificial intelligence could be integrated with these hybrid multimodal sensors to offer wearers the ability to assess their health status in real time. This Review examines the development and potential of wearable sensor systems that use multiple physical and chemical sensing modalities to assess human health.

可穿戴生物电子传感器经常被用于健康监测，但通常仅限于几个物理或化学参数，这阻碍了其提供完整健康评估的能力。最近，人们开发出了可同时连续记录多种生物物理和生物化学信号的可穿戴传感器平台。这些设备利用了电子设备制造和微型化、生物电子传感器和柔性材料的进步。然而，现有的可穿戴系统大多包含生物化学或生物物理传感器，与之相比，混合多模态可穿戴贴片的进一步发展面临着许多独特的挑战。在这里，我们研究了这种混合多模态可穿戴传感器的开发，并探讨了它们在跟踪不同用户的健康和疾病状态方面的潜在应用。我们强调了混合生物电子传感器系统必须设计的关键生物标志物和生命体征（与各种病理生理状况相关）。我们还探讨了如何将人工智能与这些混合多模态传感器相结合，为佩戴者提供实时评估其健康状况的能力。

{"title":"Hybrid multimodal wearable sensors for comprehensive health monitoring","authors":"Kuldeep Mahato, Tamoghna Saha, Shichao Ding, Samar S. Sandhu, An-Yi Chang, Joseph Wang","doi":"10.1038/s41928-024-01247-4","DOIUrl":"10.1038/s41928-024-01247-4","url":null,"abstract":"Wearable bioelectronic sensors are often used for health monitoring but are typically limited to a few physical or chemical parameters, which hinders their ability to provide a complete health assessment. Recently, wearable sensor platforms have been developed that can simultaneously and continuously record multiple biophysical and biochemical signals. These devices take advantage of advances in electronic device fabrication and miniaturization, bioelectronic sensors, and flexible materials. However, compared with existing wearable systems, which mostly contain either biochemical or biophysical sensors, hybrid multimodal wearable patches present a number of distinct challenges for further advancement. Here, we examine the development of such hybrid multimodal wearable sensors and explore their potential applications in tracking the health and disease status of different users. We highlight the key biomarkers and vital signs (related to various pathophysiological conditions) that hybrid bioelectronic sensor systems must be designed around. We also explore how artificial intelligence could be integrated with these hybrid multimodal sensors to offer wearers the ability to assess their health status in real time. This Review examines the development and potential of wearable sensor systems that use multiple physical and chemical sensing modalities to assess human health.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 9","pages":"735-750"},"PeriodicalIF":33.7,"publicationDate":"2024-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142276885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A sense of touch without skin 没有皮肤的触觉

IF 33.7 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics

Pub Date : 2024-09-18 DOI: 10.1038/s41928-024-01255-4

Katharina Zeissler

引用次数: 0

Magnesium niobate as a high-κ gate dielectric for two-dimensional electronics 铌酸镁作为二维电子学的高κ栅极电介质

IF 34.3 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics

Pub Date : 2024-09-18 DOI: 10.1038/s41928-024-01245-6

Cheng-Yi Zhu, Meng-Ru Zhang, Qing Chen, Lin-Qing Yue, Rong Song, Cong Wang, Hui-Zhen Li, Feichi Zhou, Yang Li, Weiwei Zhao, Liang Zhen, Mengwei Si, Jia Li, Jingli Wang, Yang Chai, Cheng-Yan Xu, Jing-Kai Qin

Integrated circuits based on two-dimensional semiconductors require ultrathin gate insulators that can provide high interface quality and dielectric reliability, minimized electrically active traps and efficient gate controllability. However, existing two-dimensional insulators do not provide a good trade-off in terms of bandgap, breakdown strength, dielectric constant, leakage current and bias temperature stability. Here, we show that single crystals of magnesium niobate (MgNb₂O₆) can be obtained through a buffer-controlled epitaxial growth process on a mica substrate. The atomically thin MgNb₂O₆ crystals have a wide bandgap (around 5.0 eV), high dielectric constant (around 20), large breakdown voltage (around 16 MV cm⁻¹) and good thermal reliability. The MgNb₂O₆ can form a van der Waals interface with monolayer molybdenum disulfide (MoS₂) with an extremely low density of trap states. MoS₂ field-effect transistors with MgNb₂O₆ gate dielectrics exhibit a hysteresis under 0.9 mV (MV cm⁻¹)⁻¹, a subthreshold swing of 62 mV dec⁻¹, an on/off current ratio of up to 4 × 10⁷ and high electrical reliability at 500 K. The excellent electrostatic controllability of MgNb₂O₆ allowed us to create graphene-contacted transistors and inverter circuits with a channel length of 50 nm.

基于二维半导体的集成电路需要超薄栅极绝缘体，以提供高界面质量和介电可靠性、最小电活性阱和高效栅极可控性。然而，现有的二维绝缘体在带隙、击穿强度、介电常数、泄漏电流和偏置温度稳定性等方面并不能很好地实现折衷。在这里，我们展示了在云母衬底上通过缓冲控制外延生长工艺获得的铌酸镁单晶体（MgNb2O6）。原子级薄 MgNb2O6 晶体具有宽带隙（约 5.0 eV）、高介电常数（约 20）、大击穿电压（约 16 MV cm-1）和良好的热可靠性。MgNb2O6 能与单层二硫化钼（MoS2）形成范德华界面，陷阱态密度极低。带有 MgNb2O6 栅极电介质的 MoS2 场效应晶体管在 500 K 时的磁滞低于 0.9 mV (MV cm-1)-1，阈下摆幅为 62 mV dec-1，导通/关断电流比高达 4 × 107，并且具有很高的电气可靠性。MgNb2O6 极佳的静电可控性使我们能够制造出沟道长度为 50 nm 的石墨烯接触晶体管和逆变器电路。

{"title":"Magnesium niobate as a high-κ gate dielectric for two-dimensional electronics","authors":"Cheng-Yi Zhu, Meng-Ru Zhang, Qing Chen, Lin-Qing Yue, Rong Song, Cong Wang, Hui-Zhen Li, Feichi Zhou, Yang Li, Weiwei Zhao, Liang Zhen, Mengwei Si, Jia Li, Jingli Wang, Yang Chai, Cheng-Yan Xu, Jing-Kai Qin","doi":"10.1038/s41928-024-01245-6","DOIUrl":"https://doi.org/10.1038/s41928-024-01245-6","url":null,"abstract":"Integrated circuits based on two-dimensional semiconductors require ultrathin gate insulators that can provide high interface quality and dielectric reliability, minimized electrically active traps and efficient gate controllability. However, existing two-dimensional insulators do not provide a good trade-off in terms of bandgap, breakdown strength, dielectric constant, leakage current and bias temperature stability. Here, we show that single crystals of magnesium niobate (MgNb2O6) can be obtained through a buffer-controlled epitaxial growth process on a mica substrate. The atomically thin MgNb2O6 crystals have a wide bandgap (around 5.0 eV), high dielectric constant (around 20), large breakdown voltage (around 16 MV cm−1) and good thermal reliability. The MgNb2O6 can form a van der Waals interface with monolayer molybdenum disulfide (MoS2) with an extremely low density of trap states. MoS2 field-effect transistors with MgNb2O6 gate dielectrics exhibit a hysteresis under 0.9 mV (MV cm−1)−1, a subthreshold swing of 62 mV dec−1, an on/off current ratio of up to 4 × 107 and high electrical reliability at 500 K. The excellent electrostatic controllability of MgNb2O6 allowed us to create graphene-contacted transistors and inverter circuits with a channel length of 50 nm.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"13 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142236553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Two-dimensional transistors heat up 二维晶体管发热

IF 33.7 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics

Pub Date : 2024-09-18 DOI: 10.1038/s41928-024-01254-5

Stuart Thomas

引用次数: 0

Flexible strain gauges that can be picked and placed 可拾取和放置的柔性应变片

IF 33.7 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics

Pub Date : 2024-09-18 DOI: 10.1038/s41928-024-01253-6

Matthew Parker

引用次数: 0

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