Nature Electronics最新文献

英文中文

Reporting Hall effect measurements of charge carrier mobility in emerging materials 报告新兴材料中电荷载流子迁移率的霍尔效应测量结果

IF 33.7 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics

Pub Date : 2024-07-17 DOI: 10.1038/s41928-024-01198-w

Vladimir Bruevich, Vitaly Podzorov

Hall effect measurements are important in determining the electronic properties of emerging semiconductor materials, but care must be taken in their use and analysis.

霍尔效应测量对于确定新兴半导体材料的电子特性非常重要，但在使用和分析时必须小心谨慎。

引用次数: 0

Terahertz electronics generate and detect graphene plasmon polaritons 太赫兹电子学生成并探测石墨烯等离子体极化子

IF 33.7 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics

Pub Date : 2024-07-17 DOI: 10.1038/s41928-024-01201-4

Graphene plasmon polaritons are expected to enable rapid data transfer and processing; however, these plasmons are difficult to access. Terahertz electronics now facilitate the efficient generation, manipulation and on-chip detection of wave packets lasting as little as 1.2 ps. This advance could lead to the development of nanoscale terahertz circuits.

石墨烯等离子体极化子有望实现快速数据传输和处理；然而，这些等离子体却很难获取。现在，太赫兹电子器件可以高效地产生、操纵和在芯片上检测持续时间短至 1.2 ps 的波包。这一进步将推动纳米级太赫兹电路的发展。

引用次数: 0

On-chip transfer of ultrashort graphene plasmon wave packets using terahertz electronics 利用太赫兹电子技术在芯片上传输超短石墨烯等离子体波包

IF 33.7 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics

Pub Date : 2024-07-17 DOI: 10.1038/s41928-024-01197-x

Katsumasa Yoshioka, Guillaume Bernard, Taro Wakamura, Masayuki Hashisaka, Ken-ichi Sasaki, Satoshi Sasaki, Kenji Watanabe, Takashi Taniguchi, Norio Kumada

Ultrashort polariton wave packets, such as terahertz graphene plasmon polaritons, could be used for fast information processing in integrated circuits. However, conventional optical techniques have struggled to integrate the components for controlling polariton signals and have a low conversion efficiency. Here, we show that graphene plasmon wave packets can be generated, manipulated and read out on-chip using terahertz electronics. Electrical pulses injected into a graphene microribbon through an ohmic contact can be efficiently converted into a plasmon wave packet with a pulse duration as short as 1.2 ps and a three-dimensional spatial confinement of 2.1 × 10−18 m3. The conversion efficiency between the electrical pulses and plasmon wave packets can also reach 35% due to the absence of a momentum mismatch. The transport properties of graphene plasmons are studied by changing the dielectric environments, which provides a basis for designing graphene plasmonic circuits. Terahertz electronics that can create and control ultrashort graphene plasmon wave packets with durations as short as 1.2 ps can offer on-chip handling of plasmonic signals.

超短极化子波包（如太赫兹石墨烯等离子体极化子）可用于集成电路中的快速信息处理。然而，传统光学技术难以集成控制极化子信号的元件，而且转换效率较低。在这里，我们展示了石墨烯等离子体波包可以利用太赫兹电子技术在芯片上生成、操纵和读出。通过欧姆接触注入石墨烯微带的电脉冲可以有效地转换成等离子体波包，脉冲持续时间短至 1.2 ps，三维空间约束为 2.1 × 10-18 m3。由于不存在动量失配，电脉冲和等离子体波包之间的转换效率也能达到 35%。通过改变介电环境研究了石墨烯质子的传输特性，为设计石墨烯质子电路提供了基础。

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引用次数: 0

Bioinspired in-sensor spectral adaptation for perceiving spectrally distinctive features 生物启发的传感器内光谱适应，用于感知光谱上的独特特征

IF 33.7 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics

Pub Date : 2024-07-15 DOI: 10.1038/s41928-024-01208-x

Bangsen Ouyang, Jialiang Wang, Guang Zeng, Jianmin Yan, Yue Zhou, Xixi Jiang, Bangjie Shao, Yang Chai

In challenging lighting conditions, machine vision often yields low-quality results. In situations where particular spectral signatures carry critical information, adapting the spectral sensitivity of visions systems to match the predominant spectra of the surrounding environment can improve light capture and image quality. Here we report spectra-adapted vision sensors based on arrays of back-to-back photodiodes. The spectral sensitivity of these bioinspired sensors can be tuned to match either the broadband visible spectrum or a narrow band within the near-infrared spectrum by applying different bias voltages. The process of spectral adaptation takes tens of microseconds, which is comparable with the frame rate (around 100 kHz) of state-of-the-art high-speed cameras. The spectral adaptation increases the Weber contrast of the scene by over ten times, resulting in increased recognition accuracy (from 33% to 90%) of features when exposed to intense visible-light glare. Photodiodes with a spectral response that can be adjusted between the visible and infrared regimes can be used to create imaging systems that work well under a range of challenging lighting conditions.

在极具挑战性的照明条件下，机器视觉往往只能获得低质量的结果。在特定光谱特征携带关键信息的情况下，调整视觉系统的光谱灵敏度以匹配周围环境的主要光谱，可以改善光线捕捉和图像质量。在此，我们报告了基于背靠背光电二极管阵列的光谱适应视觉传感器。这些受生物启发的传感器的光谱灵敏度可通过施加不同的偏置电压进行调整，以匹配宽带可见光谱或近红外光谱中的窄带。光谱适应过程需要数十微秒，与最先进的高速相机的帧频（约 100 kHz）相当。光谱适应将场景的韦伯对比度提高了十倍以上，从而提高了暴露在强烈可见光眩光下的特征识别准确率（从 33% 提高到 90%）。

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引用次数: 0

A polymer–semiconductor–ceramic cantilever for high-sensitivity fluid-compatible microelectromechanical systems 用于高灵敏度流体兼容微机电系统的聚合物-半导体-陶瓷悬臂

IF 33.7 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics

Pub Date : 2024-07-15 DOI: 10.1038/s41928-024-01195-z

Nahid Hosseini, Matthias Neuenschwander, Jonathan D. Adams, Santiago H. Andany, Oliver Peric, Marcel Winhold, Maria Carmen Giordano, Vinayak Shantaram Bhat, Marcos Penedo, Dirk Grundler, Georg E. Fantner

Active microelectromechanical systems (MEMS) with integrated electronic sensing and actuation can provide fast and sensitive measurements of force, acceleration and biological analytes. Strain sensors integrated onto MEMS cantilevers are widely used to transduce an applied force to an electrical signal in applications like atomic force microscopy and molecular detection. However, the high Young’s moduli of traditional MEMS materials, such as silicon or silicon nitride, limit the thickness of the devices and, therefore, the deflection sensitivity that can be obtained for a specific spring constant. Here, we show that polymer materials with a low Young’s modulus can be integrated into polymer–semiconductor–ceramic MEMS cantilevers that are thick and soft. We develop a multi-layer fabrication approach so that high-temperature processes can be used for the deposition and doping of piezoresistive semiconductor strain sensors without damaging the polymer layer. Our trilayer cantilever exhibits a sixfold reduction in force noise compared to a comparable self-sensing silicon cantilever. Furthermore, the strain-sensing electronics in our system are embedded between the polymer and ceramic layers, which makes the technology fluid-compatible. By separating high- and low-temperature fabrication processes, cantilevers that incorporate sensing electronics between a soft polymer core and hard ceramic layers can be made, providing high force sensitivity and robustness to harsh environments.

集成了电子传感和执行功能的有源微机电系统（MEMS）可对力、加速度和生物分析物进行快速灵敏的测量。在原子力显微镜和分子检测等应用中，集成在 MEMS 悬臂上的应变传感器被广泛用于将外力转换为电信号。然而，硅或氮化硅等传统 MEMS 材料的杨氏模量较高，限制了器件的厚度，因此也限制了特定弹簧常数下的偏转灵敏度。在这里，我们展示了具有低杨氏模量的聚合物材料可以集成到厚而软的聚合物-半导体-陶瓷 MEMS 悬臂中。我们开发了一种多层制造方法，从而可以使用高温工艺沉积和掺杂压阻半导体应变传感器，而不会损坏聚合物层。与同类自感应硅悬臂相比，我们的三层悬臂的力噪声降低了六倍。此外，我们系统中的应变感应电子元件嵌入在聚合物层和陶瓷层之间，这使得该技术与流体兼容。

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引用次数: 0

Three-dimensional integrated metal-oxide transistors 三维集成金属氧化物晶体管

IF 34.3 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics

Pub Date : 2024-07-08 DOI: 10.1038/s41928-024-01205-0

Saravanan Yuvaraja, Hendrik Faber, Mritunjay Kumar, Na Xiao, Glen Isaac Maciel García, Xiao Tang, Thomas D. Anthopoulos, Xiaohang Li

The monolithic three-dimensional vertical integration of thin-film transistor (TFT) technologies could be used to create high-density, energy-efficient and low-cost integrated circuits. However, the development of scalable processes for integrating three-dimensional TFT devices is challenging. Here, we report the monolithic three-dimensional integration of indium oxide (In₂O₃) TFTs on a silicon/silicon dioxide (Si/SiO₂) substrate at room temperature. We use an approach that is compatible with complementary metal–oxide–semiconductor (CMOS) processes to stack ten n-channel In₂O₃ TFTs. Different architectures—including bottom-, top- and dual-gate TFTs—can be fabricated at different layers in the stack. Our dual-gate devices exhibit enhanced electrical performance with a maximum field-effect mobility of 15 cm² V⁻¹ s⁻¹, a subthreshold swing of 0.4 V dec⁻¹ and a current on/off ratio of 10⁸. By monolithically integrating dual-gate In₂O₃ TFTs at different locations in the stack, we created unipolar invertor circuits with a signal gain of around 50 and wide noise margins. The dual-gate devices also allow fine-tuning of the invertors to achieve symmetric voltage-transfer characteristics and optimal noise margins.

薄膜晶体管（TFT）技术的单片三维垂直集成可用于制造高密度、高能效和低成本的集成电路。然而，开发用于集成三维 TFT 器件的可扩展工艺具有挑战性。在此，我们报告了在室温下将氧化铟（In2O3）TFT 单片三维集成到硅/二氧化硅（Si/SiO2）衬底上的情况。我们采用一种与互补金属氧化物半导体（CMOS）工艺兼容的方法来堆叠十个 n 沟道 In2O3 TFT。在堆栈的不同层上可以制造出不同的结构，包括底部、顶部和双栅极 TFT。我们的双栅极器件具有更强的电气性能，最大场效应迁移率为 15 cm2 V-1 s-1，阈下摆幅为 0.4 V dec-1，电流开/关比为 108。通过在堆栈的不同位置单片集成双栅极 In2O3 TFT，我们创建了单极反相器电路，信号增益约为 50，噪声裕度大。双栅极器件还允许对反相器进行微调，以实现对称的电压传输特性和最佳的噪声裕度。

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引用次数: 0

Organic electrochemical neurons for neuromorphic perception 用于神经形态感知的有机电化学神经元

IF 33.7 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics

Pub Date : 2024-07-08 DOI: 10.1038/s41928-024-01200-5

Padinhare Cholakkal Harikesh, Deyu Tu, Simone Fabiano

Neuromorphic sensing and processing has the potential to be used to create bioelectronic and robotic systems that perceive, respond and adapt to environmental changes accurately and swiftly. However, the reliance on silicon or other inorganic materials as the basis for artificial neurons in neuromorphic sensors restricts the flexibility, biocompatibility and multisensory capabilities of such systems. Here we explore the potential of organic electrochemical neurons based on organic electrochemical transistors for neuromorphic sensing and perception. We examine how neurons and systems based on organic electrochemical transistors can emulate the sensory principles of living organisms and consider the strengths and weaknesses of organic electrochemical neuron technology in mimicking biological principles. We also outline strategies for advancing the technology at the level of materials, devices, circuits and systems. This Perspective explores the potential of organic electrochemical neurons, which are based on organic electrochemical transistors, in the development of adaptable and biointegrable neuromorphic event-based sensing applications.

神经形态传感和处理有可能被用来创建生物电子和机器人系统，以准确、迅速地感知、响应和适应环境变化。然而，依赖硅或其他无机材料作为神经形态传感器中人工神经元的基础，限制了此类系统的灵活性、生物兼容性和多感知能力。在此，我们探讨了基于有机电化学晶体管的有机电化学神经元在神经形态传感和感知方面的潜力。我们研究了基于有机电化学晶体管的神经元和系统如何模拟生物体的感官原理，并考虑了有机电化学神经元技术在模拟生物原理方面的优势和劣势。我们还概述了在材料、器件、电路和系统层面推进该技术的战略。

引用次数: 0

Vertically grown metal nanosheets integrated with atomic-layer-deposited dielectrics for transistors with subnanometre capacitance-equivalent thicknesses 垂直生长的金属纳米片与原子层沉积电介质的集成，用于具有亚纳米电容等效厚度的晶体管

IF 33.7 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics

Pub Date : 2024-07-08 DOI: 10.1038/s41928-024-01202-3

Lei Zhang, Zhaochao Liu, Wei Ai, Jiabiao Chen, Zunxian Lv, Bing Wang, Mingjian Yang, Feng Luo, Jinxiong Wu

Integrating thin atomic-layer-deposited dielectrics with two-dimensional (2D) semiconductors could be used to fabricate 2D transistors with sub-1 nm capacitance-equivalent thicknesses. However, non-uniform nucleation from atomic-layer deposition on inert surfaces and subsequent high-energy metal evaporation can make atomically thin dielectrics non-insulating. Here, we report a bismuth-oxide-assisted chemical vapour deposition method to synthesize single-crystalline metal nanosheets with atomically flat surfaces. The nanosheets grow vertically on a substrate and can be easily transferred to a target substrate through polymer-free mechanical pressing. We show that palladium nanosheets offer an excellent surface for atomic-layer deposition of flat aluminium oxide (Al2O3) and hafnium oxide (HfO2) dielectrics with sub-3 nm thicknesses. These can then be laminated onto few-layer molybdenum disulfide (MoS2) as a gate stack with a capacitance-equivalent thickness of 0.9 nm and a capacitance density of around 3.9 μF cm−2. Our MoS2 top-gated transistors with a 2-nm-thick Al2O3 or HfO2 dielectric exhibit leakage currents of 10−6 A cm−2, low operating voltages of around 0.45 V and a hysteresis of less than 1 mV. Vertical metal nanosheets with atomically flat surfaces grown with a bismuth-oxide-assisted chemical vapour deposition method can be used to make metal–oxide dielectric stacks and laminated onto two-dimensional semiconductors to create transistors with sub-1 nm capacitance-equivalent thicknesses.

将原子层沉积的薄电介质与二维（2D）半导体整合在一起，可用于制造电容等效厚度小于 1 纳米的二维晶体管。然而，原子层沉积在惰性表面上的不均匀成核以及随后的高能金属蒸发会使原子薄介电材料失去绝缘性。在此，我们报告了一种氧化铋辅助化学气相沉积方法，用于合成具有原子平整表面的单晶金属纳米片。纳米片垂直生长在基底上，并可通过无聚合物机械压制轻松转移到目标基底上。我们的研究表明，钯纳米片是原子层沉积厚度小于 3 纳米的平面氧化铝（Al2O3）和氧化铪（HfO2）电介质的绝佳表面。然后，这些电介质可以层叠在少层二硫化钼（MoS2）上，作为栅极堆栈，其电容等效厚度为 0.9 纳米，电容密度约为 3.9 μF cm-2。我们的 MoS2 顶部栅极晶体管采用 2 纳米厚的 Al2O3 或 HfO2 电介质，漏电流为 10-6 A cm-2，工作电压低至 0.45 V 左右，滞后小于 1 mV。

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引用次数: 0

A microsized optical spectrometer based on an organic photodetector with an electrically tunable spectral response 一种基于有机光电探测器的微型光学光谱仪，具有电可调光谱响应

IF 33.7 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics

Pub Date : 2024-07-01 DOI: 10.1038/s41928-024-01199-9

Xie He, Yuanzhe Li, Hui Yu, Guodong Zhou, Lingyi Ke, Hin-Lap Yip, Ni Zhao

Miniaturized optical spectrometers could be of use in portable and wearable applications. Such devices have typically been based on arrays of photodetectors that provide distinct spectral responses or use complex miniaturized dispersive optics. However, these approaches often result in large centimetre-sized systems. Here we report a microsized optical spectrometer that is based on an optical-spacer-integrated photomultiplication-type organic photodetector with a bias-tunable spectral response. The approach allows the computational reconstruction of an incident light spectrum from photocurrents measured under a set of different bias voltages. The device, which has a footprint of 0.0004 cm2, is capable of broadband operation across the entire visible wavelength with a sub-5-nm resolution. To illustrate the capabilities of this approach, we fabricate an 8 × 8 spectroscopic sensor array that can be used for hyperspectral imaging. Optical-spacer-integrated photomultiplication organic photodetectors with electrically tunable spectral response can provide high-resolution optical characterization across the visible spectrum.

微型光学光谱仪可用于便携式和可穿戴式应用。这类设备通常基于提供不同光谱响应的光电探测器阵列，或使用复杂的微型色散光学器件。然而，这些方法通常会产生厘米大小的大型系统。在此，我们报告了一种微型光学光谱仪，它基于一个光学间隔集成的光倍增型有机光电探测器，具有可偏置调节的光谱响应。这种方法可以根据一组不同偏置电压下测得的光电流计算重建入射光光谱。该器件占地面积为 0.0004 平方厘米，能够在整个可见光波长范围内宽带工作，分辨率为 5 纳米以下。为了说明这种方法的能力，我们制作了一个 8 × 8 光谱传感器阵列，可用于高光谱成像。

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引用次数: 0

Memristive circuits based on multilayer hexagonal boron nitride for millimetre-wave radiofrequency applications 用于毫米波射频应用的基于多层六方氮化硼的薄膜电路

IF 33.7 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics

Pub Date : 2024-07-01 DOI: 10.1038/s41928-024-01192-2

Sebastian Pazos, Yaqing Shen, Haoran Zhang, Jordi Verdú, Andrés Fontana, Wenwen Zheng, Yue Yuan, Osamah Alharbi, Yue Ping, Eloi Guerrero, Lluís Acosta, Pedro de Paco, Dimitra Psychogiou, Atif Shamim, Deji Akinwande, Mario Lanza

Radiofrequency switches that drive or block high-frequency electromagnetic signals—typically, a few to tens of gigahertz—are essential components in modern communication devices. However, demand for higher data transmission rates requires radiofrequency switches capable of operating at frequencies beyond 100 GHz, which is challenging for current technologies. Here we report ambipolar memristive radiofrequency switches that are based on multilayer hexagonal boron nitride and can operate at frequencies up to 260 GHz. The ambipolar behaviour, which could help reduce peripheral hardware requirements, is due to a Joule-effect-assisted reset. We show switching in 21 devices with low-resistance states averaging 294 Ω and endurances of 2,000 cycles. With further biasing optimization, we reduce the resistance to 9.3 ± 3.7 Ω over more than 475 cycles, and achieve an insertion loss of 0.9 dB at 120 GHz. We also build a series–shunt device configuration with an isolation of 35 dB at 120 GHz. An optimized pulsed voltage write–verify switching approach can be used to improve the switching performance of memristors based on hexagonal boron nitride for radiofrequency circuit applications.

驱动或阻断高频电磁信号（通常为几千兆赫到几十千兆赫）的射频开关是现代通信设备的重要组件。然而，对更高数据传输速率的需求要求射频开关能够在 100 千兆赫以上的频率下工作，这对现有技术来说具有挑战性。在此，我们报告了基于多层六方氮化硼的伏极性忆阻式射频开关，其工作频率可达 260 GHz。由于焦耳效应辅助复位，这种伏极行为有助于降低外围硬件要求。我们在 21 个器件中展示了开关，其低电阻状态平均为 294 Ω，持续时间为 2,000 个周期。通过进一步偏置优化，我们在超过 475 个周期内将电阻降至 9.3 ± 3.7 Ω，并在 120 GHz 时实现了 0.9 dB 的插入损耗。我们还构建了一种串联-并联器件配置，在 120 GHz 时的隔离度为 35 dB。

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