Stretchable electronic devices are of use in the development of bioelectronics, wearable devices and healthcare monitoring. Liquid-metal-based stretchable devices are of particular interest for such systems but typically require complex manufacturing processes and suffer from poor interfacial adhesion between the liquid metal and polymeric substrates. Here we show that a membrane of electrospun polymer fibres containing semi-embedded liquid metal particles can be used to make stretchable electronics. The liquid metal particles within the fibre network rupture under pressure and fill the gaps in the fibre mesh to form conductive regions. This enables the creation of circuits with high resolution (minimum linewidths of 50 µm) and stability (over 30,000 cycles of 100% strain) using circuit-patterned stamps. The circuits can be integrated with various electronic components to achieve different functions, including square wave signal output, light emission and wireless charging. We used this approach to create sensors for bioelectrical signal monitoring, thus illustrating the biocompatibility and permeability of the membranes. We also show that the liquid-metal-containing fibre membranes can be separated into their individual components and recycled. A membrane of polymer fibres containing semi-embedded liquid metal particles can be selectively ruptured with a patterned stamp to produce stretchable circuits with high resolution and interfacial adhesion between the liquid metal and the polymer.
{"title":"Pressure-stamped stretchable electronics using a nanofibre membrane containing semi-embedded liquid metal particles","authors":"Sijie Zheng, Xiaowei Wang, Weizheng Li, Ziyang Liu, Qingning Li, Feng Yan","doi":"10.1038/s41928-024-01194-0","DOIUrl":"10.1038/s41928-024-01194-0","url":null,"abstract":"Stretchable electronic devices are of use in the development of bioelectronics, wearable devices and healthcare monitoring. Liquid-metal-based stretchable devices are of particular interest for such systems but typically require complex manufacturing processes and suffer from poor interfacial adhesion between the liquid metal and polymeric substrates. Here we show that a membrane of electrospun polymer fibres containing semi-embedded liquid metal particles can be used to make stretchable electronics. The liquid metal particles within the fibre network rupture under pressure and fill the gaps in the fibre mesh to form conductive regions. This enables the creation of circuits with high resolution (minimum linewidths of 50 µm) and stability (over 30,000 cycles of 100% strain) using circuit-patterned stamps. The circuits can be integrated with various electronic components to achieve different functions, including square wave signal output, light emission and wireless charging. We used this approach to create sensors for bioelectrical signal monitoring, thus illustrating the biocompatibility and permeability of the membranes. We also show that the liquid-metal-containing fibre membranes can be separated into their individual components and recycled. A membrane of polymer fibres containing semi-embedded liquid metal particles can be selectively ruptured with a patterned stamp to produce stretchable circuits with high resolution and interfacial adhesion between the liquid metal and the polymer.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141425393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Perovskite light-emitting diodes (PeLEDs) could be of use in the development of active-matrix displays. However, due to ion migration in crystal structure, PeLEDs have electroluminescence rise times over milliseconds, which is problematic for the development of high-refresh-rate displays. Here, we show that the electroluminescence rise time of PeLEDs can be reduced to microseconds using an individual-particle passivation strategy. The approach is based on BF4− ions that can passivate every nanocrystal in a perovskite emissive layer during film deposition. It leads to a defect-free film with discrete nanostructure and excellent crystallinity, which inhibits ion migration. Our strategy can be applied in perovskite nanocrystal films with different colours: red (635 nm), green (520 nm) and blue (475 nm). These PeLEDs all demonstrate response times within microseconds and high external quantum efficiencies of 22.7%, 26.2% and 18.1%, respectively. This allows us to create microsecond-response active-matrix PeLEDs that exhibit external quantum efficiencies above 20% at a display brightness of 500–3,000 cd m−2 for green devices with a resolution of 30 pixels per inch. We also develop microsecond-response red, green and blue active-matrix displays with 90 pixels per inch. An individual-particle passivation strategy that reduces ion migration in perovskite nanocrystal film can be used to make high-refresh-rate active-matrix displays with microsecond response times reduced by three orders of magnitude compared with typical perovskite light-emitting diodes.
{"title":"Microsecond-response perovskite light-emitting diodes for active-matrix displays","authors":"Yun Gao, Hongjin Li, Xingliang Dai, Xingjian Ying, Zhe Liu, JiaJun Qin, Jie Guo, Zhongkang Han, Yujing Zhang, Meiyi Zhu, Xiaohui Wu, Qiuting Cai, Yixing Yang, Linrun Feng, Xiaoyu Zhang, Jingyun Huang, Haiping He, Feng Gao, Zhizhen Ye","doi":"10.1038/s41928-024-01181-5","DOIUrl":"10.1038/s41928-024-01181-5","url":null,"abstract":"Perovskite light-emitting diodes (PeLEDs) could be of use in the development of active-matrix displays. However, due to ion migration in crystal structure, PeLEDs have electroluminescence rise times over milliseconds, which is problematic for the development of high-refresh-rate displays. Here, we show that the electroluminescence rise time of PeLEDs can be reduced to microseconds using an individual-particle passivation strategy. The approach is based on BF4− ions that can passivate every nanocrystal in a perovskite emissive layer during film deposition. It leads to a defect-free film with discrete nanostructure and excellent crystallinity, which inhibits ion migration. Our strategy can be applied in perovskite nanocrystal films with different colours: red (635 nm), green (520 nm) and blue (475 nm). These PeLEDs all demonstrate response times within microseconds and high external quantum efficiencies of 22.7%, 26.2% and 18.1%, respectively. This allows us to create microsecond-response active-matrix PeLEDs that exhibit external quantum efficiencies above 20% at a display brightness of 500–3,000 cd m−2 for green devices with a resolution of 30 pixels per inch. We also develop microsecond-response red, green and blue active-matrix displays with 90 pixels per inch. An individual-particle passivation strategy that reduces ion migration in perovskite nanocrystal film can be used to make high-refresh-rate active-matrix displays with microsecond response times reduced by three orders of magnitude compared with typical perovskite light-emitting diodes.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41928-024-01181-5.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141334235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-17DOI: 10.1038/s41928-024-01186-0
Xiao Wan, Trinny Tat, Yihao Zhou, Xun Zhao, Jun Chen
Conductive organic fibres can be tethered to biological surfaces without impeding biological features.
导电有机纤维可以系在生物表面，而不会妨碍生物特征。
{"title":"Building bioelectronic fibres with a light touch","authors":"Xiao Wan, Trinny Tat, Yihao Zhou, Xun Zhao, Jun Chen","doi":"10.1038/s41928-024-01186-0","DOIUrl":"10.1038/s41928-024-01186-0","url":null,"abstract":"Conductive organic fibres can be tethered to biological surfaces without impeding biological features.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141333706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-17DOI: 10.1038/s41928-024-01182-4
Shaila Niazi, Shuvro Chowdhury, Navid Anjum Aadit, Masoud Mohseni, Yao Qin, Kerem Y. Camsari
The increasing use of domain-specific computing hardware and architectures has led to an increasing demand for unconventional computing approaches. One such approach is the Ising machine, which is designed to solve combinatorial optimization problems. Here we show that a probabilistic-bit (p-bit)-based Ising machine can be used to train deep Boltzmann networks. Using hardware-aware network topologies on field-programmable gate arrays, we train the full Modified National Institute of Standards and Technology (MNIST) and Fashion MNIST datasets without downsampling, as well as a reduced version of the Canadian Institute for Advanced Research, 10 classes (CIFAR-10) dataset. For the MNIST dataset, our machine, which has 4,264 nodes (p-bits) and about 30,000 parameters, can achieve the same classification accuracy (90%) as an optimized software-based restricted Boltzmann machine with approximately 3.25 million parameters. Similar results are achieved for the Fashion MNIST and CIFAR-10 datasets. The sparse deep Boltzmann network can also generate new handwritten digits and fashion products, a task the software-based restricted Boltzmann machine fails at. Our hybrid computer performs a measured 50 to 64 billion probabilistic flips per second and can perform the contrastive divergence algorithm (CD-n) with up to n = 10 million sweeps per update, which is beyond the capabilities of existing software implementations. Probabilistic-bit-based Ising machines implemented on field-programmable gate arrays can be used to train artificial intelligence networks with the same performance as software-based approaches while using fewer model parameters.
{"title":"Training deep Boltzmann networks with sparse Ising machines","authors":"Shaila Niazi, Shuvro Chowdhury, Navid Anjum Aadit, Masoud Mohseni, Yao Qin, Kerem Y. Camsari","doi":"10.1038/s41928-024-01182-4","DOIUrl":"10.1038/s41928-024-01182-4","url":null,"abstract":"The increasing use of domain-specific computing hardware and architectures has led to an increasing demand for unconventional computing approaches. One such approach is the Ising machine, which is designed to solve combinatorial optimization problems. Here we show that a probabilistic-bit (p-bit)-based Ising machine can be used to train deep Boltzmann networks. Using hardware-aware network topologies on field-programmable gate arrays, we train the full Modified National Institute of Standards and Technology (MNIST) and Fashion MNIST datasets without downsampling, as well as a reduced version of the Canadian Institute for Advanced Research, 10 classes (CIFAR-10) dataset. For the MNIST dataset, our machine, which has 4,264 nodes (p-bits) and about 30,000 parameters, can achieve the same classification accuracy (90%) as an optimized software-based restricted Boltzmann machine with approximately 3.25 million parameters. Similar results are achieved for the Fashion MNIST and CIFAR-10 datasets. The sparse deep Boltzmann network can also generate new handwritten digits and fashion products, a task the software-based restricted Boltzmann machine fails at. Our hybrid computer performs a measured 50 to 64 billion probabilistic flips per second and can perform the contrastive divergence algorithm (CD-n) with up to n = 10 million sweeps per update, which is beyond the capabilities of existing software implementations. Probabilistic-bit-based Ising machines implemented on field-programmable gate arrays can be used to train artificial intelligence networks with the same performance as software-based approaches while using fewer model parameters.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141333574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-13DOI: 10.1038/s41928-024-01180-6
Pengju Li, Jiuyun Shi, Bozhi Tian
A wireless electronic capsule — which is engineered for ingestion and has a sensing ribbon that conforms to the shape of the stomach — can provide non-invasive and long-term tracking of gastric electrophysiological signals.
这种无线电子胶囊专为吞咽而设计，其传感带与胃的形状相吻合，可对胃电生理信号进行非侵入性的长期跟踪。
{"title":"An electronic pill for non-invasive gastric monitoring","authors":"Pengju Li, Jiuyun Shi, Bozhi Tian","doi":"10.1038/s41928-024-01180-6","DOIUrl":"10.1038/s41928-024-01180-6","url":null,"abstract":"A wireless electronic capsule — which is engineered for ingestion and has a sensing ribbon that conforms to the shape of the stomach — can provide non-invasive and long-term tracking of gastric electrophysiological signals.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141320021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-12DOI: 10.1038/s41928-024-01179-z
Dekui Song, Nan Liu
A laser scanning method can be used to make conductive hydrogels that strongly and selectively adhere to polymer substrates, even in wet physiological environments.
{"title":"Stable and reliable bio-interfacing electrodes based on conductive hydrogels","authors":"Dekui Song, Nan Liu","doi":"10.1038/s41928-024-01179-z","DOIUrl":"10.1038/s41928-024-01179-z","url":null,"abstract":"A laser scanning method can be used to make conductive hydrogels that strongly and selectively adhere to polymer substrates, even in wet physiological environments.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141309193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-06DOI: 10.1038/s41928-024-01171-7
Eunhye Baek, Sen Song, Chang-Ki Baek, Zhao Rong, Luping Shi, Carlo Vittorio Cannistraci
Neuromorphic technologies typically employ a point neuron model, neglecting the spatiotemporal nature of neuronal computation. Dendritic morphology and synaptic organization are structurally tailored for spatiotemporal information processing, such as visual perception. Here we report a neuromorphic computational model that integrates synaptic organization with dendritic tree-like morphology. Based on the physics of multigate silicon nanowire transistors with ion-doped sol–gel films, our model—termed dendristor—performs dendritic computation at the device and neural-circuit level. The dendristor offers the bioplausible nonlinear integration of excitatory/inhibitory synaptic inputs and silent synapses with diverse spatial distribution dependency, emulating direction selectivity, which is the feature that reacts to signal direction on the dendrite. We also develop a neuromorphic dendritic neural circuit—a network of interconnected dendritic neurons—that serves as a building block for the design of a multilayer network system that emulates three-dimensional spatial motion perception in the retina. A neuromorphic computational model based on multigate silicon nanowire transistors can perform dendritic computation by integrating synaptic organization with dendritic tree-like morphology and can be used to develop a multilayer network system that emulates three-dimensional spatial motion perception in the retina.
{"title":"Neuromorphic dendritic network computation with silent synapses for visual motion perception","authors":"Eunhye Baek, Sen Song, Chang-Ki Baek, Zhao Rong, Luping Shi, Carlo Vittorio Cannistraci","doi":"10.1038/s41928-024-01171-7","DOIUrl":"10.1038/s41928-024-01171-7","url":null,"abstract":"Neuromorphic technologies typically employ a point neuron model, neglecting the spatiotemporal nature of neuronal computation. Dendritic morphology and synaptic organization are structurally tailored for spatiotemporal information processing, such as visual perception. Here we report a neuromorphic computational model that integrates synaptic organization with dendritic tree-like morphology. Based on the physics of multigate silicon nanowire transistors with ion-doped sol–gel films, our model—termed dendristor—performs dendritic computation at the device and neural-circuit level. The dendristor offers the bioplausible nonlinear integration of excitatory/inhibitory synaptic inputs and silent synapses with diverse spatial distribution dependency, emulating direction selectivity, which is the feature that reacts to signal direction on the dendrite. We also develop a neuromorphic dendritic neural circuit—a network of interconnected dendritic neurons—that serves as a building block for the design of a multilayer network system that emulates three-dimensional spatial motion perception in the retina. A neuromorphic computational model based on multigate silicon nanowire transistors can perform dendritic computation by integrating synaptic organization with dendritic tree-like morphology and can be used to develop a multilayer network system that emulates three-dimensional spatial motion perception in the retina.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141264742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-03DOI: 10.1038/s41928-024-01178-0
Yen-Hung Lin
Stabilization of the cubic phase of formamidinium lead triiodide perovskite, together with passivation of undercoordinated lead atoms, can be used to create high-mobility n-type thin-film transistors, which could be combined with existing p-type devices to build complementary circuits.
稳定甲脒三碘化铅包晶石的立方相，同时钝化配位不足的铅原子，可用于制造高移动性 n 型薄膜晶体管，这种晶体管可与现有的 p 型器件相结合，构建互补电路。
{"title":"A complementary step to halide perovskite electronics","authors":"Yen-Hung Lin","doi":"10.1038/s41928-024-01178-0","DOIUrl":"10.1038/s41928-024-01178-0","url":null,"abstract":"Stabilization of the cubic phase of formamidinium lead triiodide perovskite, together with passivation of undercoordinated lead atoms, can be used to create high-mobility n-type thin-film transistors, which could be combined with existing p-type devices to build complementary circuits.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141235959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-30DOI: 10.1038/s41928-024-01185-1
Next-generation optoelectronic devices — including quantum dot and perovskite light-emitting diodes — could be used to build stretchable and multifunctional displays.
下一代光电设备（包括量子点和过氧化物发光二极管）可用于制造可拉伸的多功能显示器。
{"title":"Stretching visions of display technology","authors":"","doi":"10.1038/s41928-024-01185-1","DOIUrl":"10.1038/s41928-024-01185-1","url":null,"abstract":"Next-generation optoelectronic devices — including quantum dot and perovskite light-emitting diodes — could be used to build stretchable and multifunctional displays.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":34.3,"publicationDate":"2024-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41928-024-01185-1.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141182303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-27DOI: 10.1038/s41928-024-01176-2
Jianfeng Jiang, Lin Xu, Luojun Du, Lu Li, Guangyu Zhang, Chenguang Qiu, Lian-Mao Peng
The van der Waals systems could be used to overcome the issue of Fermi-level pinning in contacts of transistors based on two-dimensional semiconductors. However, the lack of advanced-node-lithography-compatible methods limits the use of such materials in wafer-scale integrated manufacturing. Here we report a yttrium-doping approach to convert semiconducting molybdenum disulfide (MoS2) into metallic MoS2. The approach, which is compatible with advanced-node wafer-scale integration, improves the band alignment and provides ohmic device contacts. It is based on a solid-state-source three-step doping method involving plasma, deposition and annealing, and can provide ångström-thickness surface doping. The yttrium-doped MoS2 acts as a metallic buffer that improves charge carrier transfer from the metal electrode to semiconducting MoS2. With this approach, we fabricate self-aligned, 10-nm-channel-length MoS2 field-effect transistors on two-inch wafers with an average contact resistances of 69 Ω µm and total resistances of 235 Ω µm. Our devices exhibit an ON-current density of 1.22 mA µm–1 at a drain voltage of 0.7 V, a ballistic ratio of 79% and a transconductance of 3.2 mS µm–1. A yttrium-doped metallic two-dimensional buffer layer can be used to improve charge carrier transport between the metal contacts and semiconductor channel in molybdenum-disulfide-based transistors.
范德华系统可用于克服基于二维半导体的晶体管触点中的费米级针销问题。然而，由于缺乏先进的节点光刻兼容方法，限制了此类材料在晶圆级集成制造中的应用。在此，我们报告了一种将二硫化钼（MoS2）半导体转化为金属 MoS2 的掺钇方法。这种方法与先进的节点晶圆级集成兼容，可改善带排列并提供欧姆器件触点。该方法以固态源三步掺杂法为基础，包括等离子体、沉积和退火，可提供盎司厚度的表面掺杂。掺钇的 MoS2 可充当金属缓冲器，改善电荷载流子从金属电极向半导体 MoS2 的转移。利用这种方法，我们在两英寸晶圆上制造出了自对准、10 纳米沟道长度的 MoS2 场效应晶体管，其平均接触电阻为 69 Ω µm，总电阻为 235 Ω µm。我们的器件在 0.7 V 漏极电压下的导通电流密度为 1.22 mA µm-1，弹道比为 79%，跨导为 3.2 mS µm-1。
{"title":"Yttrium-doping-induced metallization of molybdenum disulfide for ohmic contacts in two-dimensional transistors","authors":"Jianfeng Jiang, Lin Xu, Luojun Du, Lu Li, Guangyu Zhang, Chenguang Qiu, Lian-Mao Peng","doi":"10.1038/s41928-024-01176-2","DOIUrl":"10.1038/s41928-024-01176-2","url":null,"abstract":"The van der Waals systems could be used to overcome the issue of Fermi-level pinning in contacts of transistors based on two-dimensional semiconductors. However, the lack of advanced-node-lithography-compatible methods limits the use of such materials in wafer-scale integrated manufacturing. Here we report a yttrium-doping approach to convert semiconducting molybdenum disulfide (MoS2) into metallic MoS2. The approach, which is compatible with advanced-node wafer-scale integration, improves the band alignment and provides ohmic device contacts. It is based on a solid-state-source three-step doping method involving plasma, deposition and annealing, and can provide ångström-thickness surface doping. The yttrium-doped MoS2 acts as a metallic buffer that improves charge carrier transfer from the metal electrode to semiconducting MoS2. With this approach, we fabricate self-aligned, 10-nm-channel-length MoS2 field-effect transistors on two-inch wafers with an average contact resistances of 69 Ω µm and total resistances of 235 Ω µm. Our devices exhibit an ON-current density of 1.22 mA µm–1 at a drain voltage of 0.7 V, a ballistic ratio of 79% and a transconductance of 3.2 mS µm–1. A yttrium-doped metallic two-dimensional buffer layer can be used to improve charge carrier transport between the metal contacts and semiconductor channel in molybdenum-disulfide-based transistors.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141156702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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