Pub Date : 2025-12-05DOI: 10.1038/s41928-025-01522-y
Peigen Zhang, He Tian
Two-dimensional field-effect transistors with damascene-type top contacts can be created using a selective etch process, providing a potential route to integrating two-dimensional transistors into back-end-of-line processes.
{"title":"Steps to integrating 2D transistors into the back-end of line","authors":"Peigen Zhang, He Tian","doi":"10.1038/s41928-025-01522-y","DOIUrl":"10.1038/s41928-025-01522-y","url":null,"abstract":"Two-dimensional field-effect transistors with damascene-type top contacts can be created using a selective etch process, providing a potential route to integrating two-dimensional transistors into back-end-of-line processes.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 12","pages":"1130-1131"},"PeriodicalIF":40.9,"publicationDate":"2025-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145680477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-05DOI: 10.1038/s41928-025-01521-z
Taeyoung Song, Asif Islam Khan
A three-dimensional dynamic random-access memory (DRAM) architecture that uses oxide-semiconductor channel transistors offers a route to high-density, low-power memory.
Pub Date : 2025-12-05DOI: 10.1038/s41928-025-01526-8
Shaocong Wang, Yuchao Yang
By integrating arrays of amorphous silicon photodiodes and polycrystalline silicon thin-film transistor spike generators, a neuromorphic silicon retina can be created that perceives and processes light as spikes.
{"title":"A silicon retina that works with spikes","authors":"Shaocong Wang, Yuchao Yang","doi":"10.1038/s41928-025-01526-8","DOIUrl":"10.1038/s41928-025-01526-8","url":null,"abstract":"By integrating arrays of amorphous silicon photodiodes and polycrystalline silicon thin-film transistor spike generators, a neuromorphic silicon retina can be created that perceives and processes light as spikes.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 12","pages":"1134-1135"},"PeriodicalIF":40.9,"publicationDate":"2025-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145680135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-02DOI: 10.1038/s41928-025-01541-9
Hansol Park, Cheong Beom Lee, Jongmin Lee, Seon-Jeong Lim, Bum Ho Jeong, Hakjun Kim, Seong Jae Lee, Hayoung Oh, Hyungju Ahn, Do Hwan Kim, Kyeounghak Kim, Hui Joon Park
Pub Date : 2025-12-02DOI: 10.1038/s41928-025-01511-1
Carlo Vittorio Cannistraci, Eunhye Baek
An artificial spiking neuron that integrates six key neural functions within a single device could be used to build scalable neuromorphic networks.
在单个设备中集成了六个关键神经功能的人工尖峰神经元可用于构建可扩展的神经形态网络。
{"title":"Artificial neurons beyond spikes","authors":"Carlo Vittorio Cannistraci, Eunhye Baek","doi":"10.1038/s41928-025-01511-1","DOIUrl":"10.1038/s41928-025-01511-1","url":null,"abstract":"An artificial spiking neuron that integrates six key neural functions within a single device could be used to build scalable neuromorphic networks.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 12","pages":"1140-1141"},"PeriodicalIF":40.9,"publicationDate":"2025-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145664829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-27DOI: 10.1038/s41928-025-01496-x
Gunho Moon, Suk-Ho Lee, Hyunje Cho, Heewon Park, Heonsu Ahn, Chang-Won Choi, Sera Yang, Seung-Hyun Shin, Jinjae Kim, Jong Yun Choi, Seok Young Min, Sumin Lee, Hyunjin Jung, Jaeyoung Kim, Jewook Park, Han Woong Yeom, Gil-Ho Lee, Myungchul Oh, Jong-Hoon Kang, Hyunyong Choi, Cheol-Joo Kim, Jonghwan Kim, Si-Young Choi, Moon-Ho Jo
Monolayers of transition metal dichalcogenides, such as molybdenum disulfide, are a potential platform for two-dimensional carrier transport. However, although single-crystalline monolayer channels have been grown at the wafer scale using unidirectional coalescence epitaxy, achieving coherent two-dimensional transport at similar scales remains challenging. This is mainly due to the presence of residual crystalline defects, such as one-dimensional extended and point defects, which emerge when multiple grains coalesce. Here we report an epitaxial growth of single-crystal molybdenum disulfide monolayers at wafer scales in which these defects are minimized by coalescence kinetics control on vicinal sapphire substrates. The resulting channels exhibit coherent transport—manifesting as weak localization and the onset of quantum Hall effects at low temperature—as well as a Hall mobility of 1,200 cm2 V−1 s−1. These coherent channels are used to create arrays of field-effect transistors, which exhibit an average mobility of around 100 cm2 V−1 s−1 and a minimum subthreshold swing of around 65 mV dec−1 at room temperature. By controlling the coalescence of multiple unidirectional grains on vicinal sapphire substrates, wafer-scale channels of single-crystalline molybdenum disulfide can be grown, which exhibit coherent quantum transport across large length scales.
{"title":"Single-crystalline monolayer semiconductors with coherent quantum transport by vicinal van der Waals epitaxy","authors":"Gunho Moon, Suk-Ho Lee, Hyunje Cho, Heewon Park, Heonsu Ahn, Chang-Won Choi, Sera Yang, Seung-Hyun Shin, Jinjae Kim, Jong Yun Choi, Seok Young Min, Sumin Lee, Hyunjin Jung, Jaeyoung Kim, Jewook Park, Han Woong Yeom, Gil-Ho Lee, Myungchul Oh, Jong-Hoon Kang, Hyunyong Choi, Cheol-Joo Kim, Jonghwan Kim, Si-Young Choi, Moon-Ho Jo","doi":"10.1038/s41928-025-01496-x","DOIUrl":"10.1038/s41928-025-01496-x","url":null,"abstract":"Monolayers of transition metal dichalcogenides, such as molybdenum disulfide, are a potential platform for two-dimensional carrier transport. However, although single-crystalline monolayer channels have been grown at the wafer scale using unidirectional coalescence epitaxy, achieving coherent two-dimensional transport at similar scales remains challenging. This is mainly due to the presence of residual crystalline defects, such as one-dimensional extended and point defects, which emerge when multiple grains coalesce. Here we report an epitaxial growth of single-crystal molybdenum disulfide monolayers at wafer scales in which these defects are minimized by coalescence kinetics control on vicinal sapphire substrates. The resulting channels exhibit coherent transport—manifesting as weak localization and the onset of quantum Hall effects at low temperature—as well as a Hall mobility of 1,200 cm2 V−1 s−1. These coherent channels are used to create arrays of field-effect transistors, which exhibit an average mobility of around 100 cm2 V−1 s−1 and a minimum subthreshold swing of around 65 mV dec−1 at room temperature. By controlling the coalescence of multiple unidirectional grains on vicinal sapphire substrates, wafer-scale channels of single-crystalline molybdenum disulfide can be grown, which exhibit coherent quantum transport across large length scales.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 12","pages":"1182-1190"},"PeriodicalIF":40.9,"publicationDate":"2025-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.comhttps://www.nature.com/articles/s41928-025-01496-x.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145609362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-27DOI: 10.1038/s41928-025-01514-y
Sunhao Shi, Jui-Han Fu, Vincent Tung
Atomic steps formed on sapphire surfaces cut at a slight tilt can enable wafer-scale growth of defect-free molybdenum disulfide monolayers with coherent quantum transport properties.
{"title":"A step-by-step to quantum-grade monolayers","authors":"Sunhao Shi, Jui-Han Fu, Vincent Tung","doi":"10.1038/s41928-025-01514-y","DOIUrl":"10.1038/s41928-025-01514-y","url":null,"abstract":"Atomic steps formed on sapphire surfaces cut at a slight tilt can enable wafer-scale growth of defect-free molybdenum disulfide monolayers with coherent quantum transport properties.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 12","pages":"1136-1137"},"PeriodicalIF":40.9,"publicationDate":"2025-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145609372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-24DOI: 10.1038/s41928-025-01525-9
Advances in direct ink writing techniques are helping to reshape the way electronic devices are fabricated.
直接墨水书写技术的进步正在帮助重塑电子设备的制造方式。
{"title":"Writing electronics","authors":"","doi":"10.1038/s41928-025-01525-9","DOIUrl":"10.1038/s41928-025-01525-9","url":null,"abstract":"Advances in direct ink writing techniques are helping to reshape the way electronic devices are fabricated.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 11","pages":"995-995"},"PeriodicalIF":40.9,"publicationDate":"2025-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.comhttps://www.nature.com/articles/s41928-025-01525-9.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145585375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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