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Artificial neurons beyond spikes 超越尖峰的人工神经元
IF 40.9 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-12-02 DOI: 10.1038/s41928-025-01511-1
Carlo Vittorio Cannistraci, Eunhye Baek
An artificial spiking neuron that integrates six key neural functions within a single device could be used to build scalable neuromorphic networks.
在单个设备中集成了六个关键神经功能的人工尖峰神经元可用于构建可扩展的神经形态网络。
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引用次数: 0
Single-crystalline monolayer semiconductors with coherent quantum transport by vicinal van der Waals epitaxy 邻域范德华外延的相干量子输运单晶单层半导体
IF 40.9 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-11-27 DOI: 10.1038/s41928-025-01496-x
Gunho Moon, Suk-Ho Lee, Hyunje Cho, Heewon Park, Heonsu Ahn, Chang-Won Choi, Sera Yang, Seung-Hyun Shin, Jinjae Kim, Jong Yun Choi, Seok Young Min, Sumin Lee, Hyunjin Jung, Jaeyoung Kim, Jewook Park, Han Woong Yeom, Gil-Ho Lee, Myungchul Oh, Jong-Hoon Kang, Hyunyong Choi, Cheol-Joo Kim, Jonghwan Kim, Si-Young Choi, Moon-Ho Jo
Monolayers of transition metal dichalcogenides, such as molybdenum disulfide, are a potential platform for two-dimensional carrier transport. However, although single-crystalline monolayer channels have been grown at the wafer scale using unidirectional coalescence epitaxy, achieving coherent two-dimensional transport at similar scales remains challenging. This is mainly due to the presence of residual crystalline defects, such as one-dimensional extended and point defects, which emerge when multiple grains coalesce. Here we report an epitaxial growth of single-crystal molybdenum disulfide monolayers at wafer scales in which these defects are minimized by coalescence kinetics control on vicinal sapphire substrates. The resulting channels exhibit coherent transport—manifesting as weak localization and the onset of quantum Hall effects at low temperature—as well as a Hall mobility of 1,200 cm2 V−1 s−1. These coherent channels are used to create arrays of field-effect transistors, which exhibit an average mobility of around 100 cm2 V−1 s−1 and a minimum subthreshold swing of around 65 mV dec−1 at room temperature. By controlling the coalescence of multiple unidirectional grains on vicinal sapphire substrates, wafer-scale channels of single-crystalline molybdenum disulfide can be grown, which exhibit coherent quantum transport across large length scales.
过渡金属二硫族化合物(如二硫化钼)的单层是二维载流子输运的潜在平台。然而,尽管单晶单层通道已经在晶圆尺度上使用单向聚结外延生长,但在类似尺度上实现相干二维输运仍然具有挑战性。这主要是由于存在残余的晶体缺陷,如一维扩展缺陷和点缺陷,当多个晶粒合并时出现。在这里,我们报告了单晶二硫化钼单层在晶片尺度上的外延生长,其中这些缺陷通过邻近蓝宝石衬底的聚结动力学控制最小化。由此产生的通道表现出相干输运——表现为弱局域化和低温下量子霍尔效应的开始——以及1200 cm2 V−1 s−1的霍尔迁移率。这些相干通道用于创建场效应晶体管阵列,在室温下,其平均迁移率约为100 cm2 V−1 s−1,最小亚阈值摆幅约为65 mV dec−1。通过控制相邻蓝宝石衬底上多个单向晶粒的聚并,可以生长单晶二硫化钼的晶片尺度通道,并在大长度尺度上表现出相干量子输运。
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引用次数: 0
A step-by-step to quantum-grade monolayers 一步一步走向量子级单层
IF 40.9 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-11-27 DOI: 10.1038/s41928-025-01514-y
Sunhao Shi, Jui-Han Fu, Vincent Tung
Atomic steps formed on sapphire surfaces cut at a slight tilt can enable wafer-scale growth of defect-free molybdenum disulfide monolayers with coherent quantum transport properties.
在略微倾斜切割的蓝宝石表面上形成的原子台阶可以使具有相干量子输运性质的无缺陷二硫化钼单层在晶圆尺度上生长。
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引用次数: 0
Writing electronics 写电子产品
IF 40.9 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-11-24 DOI: 10.1038/s41928-025-01525-9
Advances in direct ink writing techniques are helping to reshape the way electronic devices are fabricated.
直接墨水书写技术的进步正在帮助重塑电子设备的制造方式。
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引用次数: 0
Single-mode terahertz sources with integrated graphene plasmons 集成石墨烯等离子体的单模太赫兹源
IF 40.9 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-11-19 DOI: 10.1038/s41928-025-01518-8
Katharina Zeissler
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引用次数: 0
System-level integration of 2D electronics 二维电子学的系统级集成
IF 40.9 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-11-19 DOI: 10.1038/s41928-025-01519-7
Katharina Zeissler
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引用次数: 0
Micro-aerial vehicles that can dock vertically 可以垂直停靠的微型飞行器
IF 40.9 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-11-19 DOI: 10.1038/s41928-025-01523-x
Matthew Parker
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引用次数: 0
Making copper substrates that are ultraflat 制造超平坦的铜衬底
IF 40.9 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-11-19 DOI: 10.1038/s41928-025-01524-w
Matthew Parker
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引用次数: 0
Parametric amplifiers for simplified quantum readout 用于简化量子读出的参数放大器
IF 40.9 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-11-14 DOI: 10.1038/s41928-025-01502-2
Nikita Klimovich
Two papers report superconducting travelling-wave parametric amplifiers that can operate in two distinct modes and could potentially eliminate the need for isolators in quantum measurement systems.
两篇论文报道了超导行波参数放大器,它可以在两种不同的模式下工作,并且有可能消除量子测量系统中对隔离器的需求。
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引用次数: 0
A travelling-wave parametric amplifier isolator 一种行波参量放大器隔离器
IF 40.9 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-11-14 DOI: 10.1038/s41928-025-01489-w
Arpit Ranadive, Bekim Fazliji, Gwenael Le Gal, Giulio Cappelli, Guilliam Butseraen, Edgar Bonet, Eric Eyraud, Sina Böhling, Luca Planat, A. Metelmann, Nicolas Roch
Superconducting travelling-wave parametric amplifiers are promising devices for the near-quantum-limited broadband amplification of microwave signals and are essential for high-quantum-efficiency microwave read-out lines. Built-in isolation, as well as gain, could address their primary limitation: a lack of true directionality due to the potential backward travel of electromagnetic radiation to their input port. Here we report a travelling-wave parametric amplifier isolator that is based on Josephson junctions. The approach uses third-order nonlinearity for amplification and second-order nonlinearity for the frequency upconversion of backward-propagating modes to provide reverse isolation. These parametric processes, enhanced by a phase-matching mechanism, exhibit gain of up to 20 dB and reverse isolation of up to 30 dB over a static 3-dB bandwidth greater than 500 MHz and maintain near-quantum-limited added noise. A Josephson-junction-based travelling-wave parametric amplifier isolator can provide gain of up to 20 dB and reverse isolation of up to 30 dB over a static 3-dB bandwidth greater than 500 MHz and maintain a near-quantum-limited added noise.
超导行波参量放大器是近量子限制的微波信号宽带放大器件,是高量子效率微波读出线路的关键器件。内置隔离和增益可以解决它们的主要限制:由于电磁辐射可能向后传播到它们的输入端口而缺乏真正的方向性。本文报道了一种基于约瑟夫森结的行波参量放大器隔离器。该方法利用三阶非线性放大和二阶非线性上变频的反向传播模式,以提供反向隔离。这些参数化过程,通过相位匹配机制增强,在大于500 MHz的静态3-dB带宽上表现出高达20 dB的增益和高达30 dB的反向隔离,并保持近量子限制的附加噪声。基于约瑟夫森结的行波参数化放大器隔离器可以在大于500mhz的静态3db带宽上提供高达20db的增益和高达30db的反向隔离,并保持近量子限制的附加噪声。
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引用次数: 0
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Nature Electronics
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