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A tactile oral pad based on carbon nanotubes for multimodal haptic interaction 基于碳纳米管的触觉口腔垫,用于多模态触觉交互
IF 34.3 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-28 DOI: 10.1038/s41928-024-01234-9
Bo Hou, Dingzhu Yang, Xiaoyuan Ren, Luying Yi, Xiaogang Liu

Wearable systems that incorporate soft tactile sensors that transmit spatio-temporal touch patterns may be useful in the development of biomedical robotics. Such systems have been employed for tasks such as typing and device operation, but their effectiveness in converting pressure patterns into specific control commands lags behind that of traditional finger-operated electronic devices. Here, we describe a tactile oral pad with a touch sensor array made from a carbon nanotube and silicone composite. The oral pad can be operated by moving either the tongue or teeth, and it can detect various strains so that it functions like a touchscreen. Combined with a recurrent neural network, we show that the oral pad can be used for typing, gaming and wheelchair navigation through cooperative control of tongue sliding (below 50 kPa pressure) and teeth clicking (above 500 kPa pressure).

在生物医学机器人技术的发展过程中,结合了可传输时空触摸模式的软触觉传感器的可穿戴系统可能会大有用武之地。此类系统已被用于打字和设备操作等任务,但它们在将压力模式转换为特定控制命令方面的效果落后于传统的手指操作电子设备。在这里,我们介绍一种带有由碳纳米管和硅树脂复合材料制成的触摸传感器阵列的触觉口腔垫。该口腔垫可通过移动舌头或牙齿进行操作,并能检测到各种应变,因此其功能类似于触摸屏。结合递归神经网络,我们展示了通过舌头滑动(压力低于 50 kPa)和牙齿点击(压力高于 500 kPa)的协同控制,口腔垫可用于打字、游戏和轮椅导航。
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引用次数: 0
Continuing challenges in 2D semiconductors 二维半导体的持续挑战
IF 33.7 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-28 DOI: 10.1038/s41928-024-01241-w
The further development of transistors based on two-dimensional transition metal dichalcogenides faces various issues, starting with the high density of defects typically found in the materials.
基于二维过渡金属二卤化物的晶体管的进一步发展面临着各种问题,首先是材料中通常存在的高密度缺陷。
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引用次数: 0
Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy 使用六方氮化硼电介质和高内聚能金属栅极的二维材料晶体管
IF 34.3 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-26 DOI: 10.1038/s41928-024-01233-w
Yaqing Shen, Kaichen Zhu, Yiping Xiao, Dominic Waldhör, Abdulrahman H. Basher, Theresia Knobloch, Sebastian Pazos, Xianhu Liang, Wenwen Zheng, Yue Yuan, Juan B. Roldan, Udo Schwingenschlögl, He Tian, Huaqiang Wu, Thomas F. Schranghamer, Nicholas Trainor, Joan M. Redwing, Saptarshi Das, Tibor Grasser, Mario Lanza

Two-dimensional (2D) semiconductors could potentially be used as channel materials in commercial field-effect transistors. However, the interface between 2D semiconductors and most gate dielectrics contains traps that degrade performance. Layered hexagonal boron nitride (h-BN) can form a defect-free interface with 2D semiconductors, but when prepared by industry-compatible methods—such as chemical vapour deposition (CVD)—the presence of native defects increases leakage current and reduces dielectric strength. Here we show that metal gate electrodes with a high cohesive energy—platinum and tungsten—can allow CVD-grown layered h-BN to be used as a gate dielectric in transistors. The electrodes can reduce the current across CVD-grown h-BN by a factor of around 500 compared to similar devices with gold electrodes and can provide a high dielectric strength of at least 25 MV cm−1. We examine the behaviour statistically across 867 devices, which includes a microchip based on complementary metal–oxide–semiconductor technology.

二维(2D)半导体有可能用作商用场效应晶体管的沟道材料。然而,二维半导体与大多数栅极电介质之间的界面含有降低性能的陷阱。层状六方氮化硼(h-BN)可与二维半导体形成无缺陷的界面,但当采用与工业兼容的方法(如化学气相沉积法)制备时,原生缺陷的存在会增加漏电流并降低介电强度。在这里,我们展示了具有高内聚能的金属栅极电极--铂和钨--可以使 CVD 生长的层状 h-BN 用作晶体管的栅极电介质。与使用金电极的类似器件相比,这些电极能将通过 CVD 生长的 h-BN 的电流降低约 500 倍,并能提供至少 25 MV cm-1 的高介电强度。我们对 867 个器件的行为进行了统计检测,其中包括基于互补金属氧化物半导体技术的微芯片。
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引用次数: 0
A probe that measures more neurons across the brain 能测量大脑中更多神经元的探针
IF 33.7 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-20 DOI: 10.1038/s41928-024-01239-4
Katharina Zeissler
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引用次数: 0
Lynn Conway (1938–2024) 林恩-康威(1938-2024)
IF 33.7 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-19 DOI: 10.1038/s41928-024-01232-x
Kenneth Shepard
Computer engineer and transgender advocate who shaped the way VLSI systems are designed.
计算机工程师和变性人倡导者,他塑造了 VLSI 系统的设计方式。
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引用次数: 0
Organic photodetectors that work underwater 可在水下工作的有机光电探测器
IF 33.7 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-19 DOI: 10.1038/s41928-024-01238-5
Matthew Parker
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引用次数: 0
Tuning electronic circuits close to absolute zero using quantum paraelectric varactors 利用量子准电变容器调谐接近绝对零度的电子电路
IF 34.3 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-14 DOI: 10.1038/s41928-024-01215-y
Radiofrequency tuning elements made of quantum paraelectric materials are demonstrated at temperatures close to absolute zero — a temperature regime in which conventional electronic tuning components do not work. This advance greatly improves the read-out sensitivity of quantum circuits that require operation at such low temperatures.
由量子准电材料制成的射频调谐元件在接近绝对零度的温度下进行了演示--在这种温度下,传统的电子调谐元件无法工作。这一进步大大提高了需要在如此低温下工作的量子电路的读出灵敏度。
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引用次数: 0
A scalable universal Ising machine based on interaction-centric storage and compute-in-memory 基于以交互为中心的存储和内存计算的可扩展通用伊辛机
IF 34.3 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-13 DOI: 10.1038/s41928-024-01228-7
Wenshuo Yue, Teng Zhang, Zhaokun Jing, Kai Wu, Yuxiang Yang, Zhen Yang, Yongqin Wu, Weihai Bu, Kai Zheng, Jin Kang, Yibo Lin, Yaoyu Tao, Bonan Yan, Ru Huang, Yuchao Yang

Ising machines are annealing processors that can solve combinatorial optimization problems via the physical evolution of the corresponding Ising graphs. Such machines are, however, typically restricted to solving problems with certain kinds of graph topology because the spin location and connections are fixed. Here, we report a universal Ising machine that supports arbitrary Ising graph topology with reasonable hardware resources using a coarse-grained compressed sparse row method to compress and store sparse Ising graph adjacency matrices. The approach, which we term interaction-centric storage, is suitable for any kind of Ising graph and reduces the memory scaling cost. We experimentally implement the Ising machine using compute-in-memory hardware based on a 40 nm resistive random-access memory arrays. We use the machine to solve max-cut and graph colouring problems, with the latter showing a 442–1,450 factor improvement in speed and 4.1 × 105–6.0 × 105 factor reduction in energy consumption compared to a general-purpose graphics processing unit. We also use our Ising machine to solve a realistic electronic design automation problem—multiple patterning lithography layout decomposition—with 390–65,550 times speedup compared to the integer linear programming algorithm on a typical central processing unit.

伊辛机是一种退火处理器,可以通过相应伊辛图的物理演化来解决组合优化问题。然而,由于自旋位置和连接是固定的,这类机器通常仅限于解决特定类型图拓扑的问题。在这里,我们报告了一种通用的伊辛机器,它能以合理的硬件资源支持任意伊辛图拓扑,使用粗粒度压缩稀疏行方法来压缩和存储稀疏伊辛图邻接矩阵。我们称这种以交互为中心的存储方法适用于任何类型的伊辛图,并能降低内存扩展成本。我们使用基于 40 纳米电阻式随机存取存储器阵列的内存计算硬件实验性地实现了 Ising 机器。与通用图形处理器相比,后者的速度提高了 442-1,450 倍,能耗降低了 4.1 × 105-6.0 × 105 倍。我们还利用伊辛机器解决了一个现实的电子设计自动化问题--多图案光刻布局分解,与典型中央处理器上的整数线性规划算法相比,速度提高了 390-65,550 倍。
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引用次数: 0
Priorities for net-zero web services 零净值网络服务的优先事项
IF 33.7 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-12 DOI: 10.1038/s41928-024-01227-8
Mohit Arora, Iain McClenaghan, Lydia Wozniak
The complexity of the infrastructure underpinning the modern Internet has led to a lack of clarity on how to measure the energy consumption of web services and achieve sustainable web design. It is now crucial to redirect sustainability efforts in the sector towards more effective interventions.
支撑现代互联网的基础设施十分复杂,因此,如何衡量网络服务的能耗和实现可持续的网络设计并不明确。现在,将该领域的可持续发展工作转向更有效的干预措施至关重要。
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引用次数: 0
A subdural CMOS optical device for bidirectional neural interfacing 用于双向神经接口的硬膜下 CMOS 光学设备
IF 34.3 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-12 DOI: 10.1038/s41928-024-01209-w
Eric H. Pollmann, Heyu Yin, Ilke Uguz, Agrita Dubey, Katie E. Wingel, John S. Choi, Sajjad Moazeni, Yatin Gilhotra, Victoria Andino-Pavlovsky, Adam Banees, Abhinav Parihar, Vivek Boominathan, Jacob T. Robinson, Ashok Veeraraghavan, Vincent A. Pieribone, Bijan Pesaran, Kenneth L. Shepard

Optical neurotechnologies use light to interface with neurons and can monitor and manipulate neural activity with high spatial-temporal precision over large cortical areas. There has been considerable progress in miniaturizing microscopes for head-mounted configurations, but existing devices are bulky and their application in humans will require a more non-invasive, fully implantable form factor. Here we report an ultrathin, miniaturized subdural complementary metal–oxide–semiconductor (CMOS) optical device for bidirectional optical stimulation and recording. We use a custom CMOS application-specific integrated circuit that is capable of both fluorescence imaging and optogenetic stimulation, creating a probe with a total thickness of less than 200 µm, which is thin enough to lie entirely within the subdural space of the primate brain. We show that the device can be used for imaging and optical stimulation in a mouse model and can be used to decode reach movement speed in a non-human primate.

光学神经技术利用光与神经元连接,可以在大面积皮层区域内以高时空精度监测和操控神经活动。头戴式配置显微镜的微型化已经取得了相当大的进展,但现有设备非常笨重,在人体中的应用需要更无创、完全可植入的外形。在此,我们报告了一种用于双向光刺激和记录的超薄微型硬膜下互补金属氧化物半导体(CMOS)光学设备。我们使用了一种定制的 CMOS 特定应用集成电路,它既能进行荧光成像,又能进行光遗传刺激,从而制造出一个总厚度小于 200 微米的探头,其厚度足以完全置于灵长类动物大脑硬膜下空间内。我们的研究表明,该装置可用于小鼠模型的成像和光刺激,并可用于解码非人灵长类动物的到达运动速度。
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引用次数: 0
期刊
Nature Electronics
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