Pub Date : 2024-08-28DOI: 10.1038/s41928-024-01234-9
Bo Hou, Dingzhu Yang, Xiaoyuan Ren, Luying Yi, Xiaogang Liu
Wearable systems that incorporate soft tactile sensors that transmit spatio-temporal touch patterns may be useful in the development of biomedical robotics. Such systems have been employed for tasks such as typing and device operation, but their effectiveness in converting pressure patterns into specific control commands lags behind that of traditional finger-operated electronic devices. Here, we describe a tactile oral pad with a touch sensor array made from a carbon nanotube and silicone composite. The oral pad can be operated by moving either the tongue or teeth, and it can detect various strains so that it functions like a touchscreen. Combined with a recurrent neural network, we show that the oral pad can be used for typing, gaming and wheelchair navigation through cooperative control of tongue sliding (below 50 kPa pressure) and teeth clicking (above 500 kPa pressure).
{"title":"A tactile oral pad based on carbon nanotubes for multimodal haptic interaction","authors":"Bo Hou, Dingzhu Yang, Xiaoyuan Ren, Luying Yi, Xiaogang Liu","doi":"10.1038/s41928-024-01234-9","DOIUrl":"https://doi.org/10.1038/s41928-024-01234-9","url":null,"abstract":"<p>Wearable systems that incorporate soft tactile sensors that transmit spatio-temporal touch patterns may be useful in the development of biomedical robotics. Such systems have been employed for tasks such as typing and device operation, but their effectiveness in converting pressure patterns into specific control commands lags behind that of traditional finger-operated electronic devices. Here, we describe a tactile oral pad with a touch sensor array made from a carbon nanotube and silicone composite. The oral pad can be operated by moving either the tongue or teeth, and it can detect various strains so that it functions like a touchscreen. Combined with a recurrent neural network, we show that the oral pad can be used for typing, gaming and wheelchair navigation through cooperative control of tongue sliding (below 50 kPa pressure) and teeth clicking (above 500 kPa pressure).</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":34.3,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142085073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-28DOI: 10.1038/s41928-024-01241-w
The further development of transistors based on two-dimensional transition metal dichalcogenides faces various issues, starting with the high density of defects typically found in the materials.
基于二维过渡金属二卤化物的晶体管的进一步发展面临着各种问题,首先是材料中通常存在的高密度缺陷。
{"title":"Continuing challenges in 2D semiconductors","authors":"","doi":"10.1038/s41928-024-01241-w","DOIUrl":"10.1038/s41928-024-01241-w","url":null,"abstract":"The further development of transistors based on two-dimensional transition metal dichalcogenides faces various issues, starting with the high density of defects typically found in the materials.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41928-024-01241-w.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142090209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-26DOI: 10.1038/s41928-024-01233-w
Yaqing Shen, Kaichen Zhu, Yiping Xiao, Dominic Waldhör, Abdulrahman H. Basher, Theresia Knobloch, Sebastian Pazos, Xianhu Liang, Wenwen Zheng, Yue Yuan, Juan B. Roldan, Udo Schwingenschlögl, He Tian, Huaqiang Wu, Thomas F. Schranghamer, Nicholas Trainor, Joan M. Redwing, Saptarshi Das, Tibor Grasser, Mario Lanza
Two-dimensional (2D) semiconductors could potentially be used as channel materials in commercial field-effect transistors. However, the interface between 2D semiconductors and most gate dielectrics contains traps that degrade performance. Layered hexagonal boron nitride (h-BN) can form a defect-free interface with 2D semiconductors, but when prepared by industry-compatible methods—such as chemical vapour deposition (CVD)—the presence of native defects increases leakage current and reduces dielectric strength. Here we show that metal gate electrodes with a high cohesive energy—platinum and tungsten—can allow CVD-grown layered h-BN to be used as a gate dielectric in transistors. The electrodes can reduce the current across CVD-grown h-BN by a factor of around 500 compared to similar devices with gold electrodes and can provide a high dielectric strength of at least 25 MV cm−1. We examine the behaviour statistically across 867 devices, which includes a microchip based on complementary metal–oxide–semiconductor technology.
{"title":"Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy","authors":"Yaqing Shen, Kaichen Zhu, Yiping Xiao, Dominic Waldhör, Abdulrahman H. Basher, Theresia Knobloch, Sebastian Pazos, Xianhu Liang, Wenwen Zheng, Yue Yuan, Juan B. Roldan, Udo Schwingenschlögl, He Tian, Huaqiang Wu, Thomas F. Schranghamer, Nicholas Trainor, Joan M. Redwing, Saptarshi Das, Tibor Grasser, Mario Lanza","doi":"10.1038/s41928-024-01233-w","DOIUrl":"https://doi.org/10.1038/s41928-024-01233-w","url":null,"abstract":"<p>Two-dimensional (2D) semiconductors could potentially be used as channel materials in commercial field-effect transistors. However, the interface between 2D semiconductors and most gate dielectrics contains traps that degrade performance. Layered hexagonal boron nitride (h-BN) can form a defect-free interface with 2D semiconductors, but when prepared by industry-compatible methods—such as chemical vapour deposition (CVD)—the presence of native defects increases leakage current and reduces dielectric strength. Here we show that metal gate electrodes with a high cohesive energy—platinum and tungsten—can allow CVD-grown layered h-BN to be used as a gate dielectric in transistors. The electrodes can reduce the current across CVD-grown h-BN by a factor of around 500 compared to similar devices with gold electrodes and can provide a high dielectric strength of at least 25 MV cm<sup>−1</sup>. We examine the behaviour statistically across 867 devices, which includes a microchip based on complementary metal–oxide–semiconductor technology.</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":34.3,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142085067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-20DOI: 10.1038/s41928-024-01239-4
Katharina Zeissler
{"title":"A probe that measures more neurons across the brain","authors":"Katharina Zeissler","doi":"10.1038/s41928-024-01239-4","DOIUrl":"10.1038/s41928-024-01239-4","url":null,"abstract":"","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142007572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-19DOI: 10.1038/s41928-024-01232-x
Kenneth Shepard
Computer engineer and transgender advocate who shaped the way VLSI systems are designed.
计算机工程师和变性人倡导者,他塑造了 VLSI 系统的设计方式。
{"title":"Lynn Conway (1938–2024)","authors":"Kenneth Shepard","doi":"10.1038/s41928-024-01232-x","DOIUrl":"10.1038/s41928-024-01232-x","url":null,"abstract":"Computer engineer and transgender advocate who shaped the way VLSI systems are designed.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41928-024-01232-x.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142007571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-19DOI: 10.1038/s41928-024-01238-5
Matthew Parker
{"title":"Organic photodetectors that work underwater","authors":"Matthew Parker","doi":"10.1038/s41928-024-01238-5","DOIUrl":"10.1038/s41928-024-01238-5","url":null,"abstract":"","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142007570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-14DOI: 10.1038/s41928-024-01215-y
Radiofrequency tuning elements made of quantum paraelectric materials are demonstrated at temperatures close to absolute zero — a temperature regime in which conventional electronic tuning components do not work. This advance greatly improves the read-out sensitivity of quantum circuits that require operation at such low temperatures.
{"title":"Tuning electronic circuits close to absolute zero using quantum paraelectric varactors","authors":"","doi":"10.1038/s41928-024-01215-y","DOIUrl":"https://doi.org/10.1038/s41928-024-01215-y","url":null,"abstract":"Radiofrequency tuning elements made of quantum paraelectric materials are demonstrated at temperatures close to absolute zero — a temperature regime in which conventional electronic tuning components do not work. This advance greatly improves the read-out sensitivity of quantum circuits that require operation at such low temperatures.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":34.3,"publicationDate":"2024-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141980834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-13DOI: 10.1038/s41928-024-01228-7
Wenshuo Yue, Teng Zhang, Zhaokun Jing, Kai Wu, Yuxiang Yang, Zhen Yang, Yongqin Wu, Weihai Bu, Kai Zheng, Jin Kang, Yibo Lin, Yaoyu Tao, Bonan Yan, Ru Huang, Yuchao Yang
Ising machines are annealing processors that can solve combinatorial optimization problems via the physical evolution of the corresponding Ising graphs. Such machines are, however, typically restricted to solving problems with certain kinds of graph topology because the spin location and connections are fixed. Here, we report a universal Ising machine that supports arbitrary Ising graph topology with reasonable hardware resources using a coarse-grained compressed sparse row method to compress and store sparse Ising graph adjacency matrices. The approach, which we term interaction-centric storage, is suitable for any kind of Ising graph and reduces the memory scaling cost. We experimentally implement the Ising machine using compute-in-memory hardware based on a 40 nm resistive random-access memory arrays. We use the machine to solve max-cut and graph colouring problems, with the latter showing a 442–1,450 factor improvement in speed and 4.1 × 105–6.0 × 105 factor reduction in energy consumption compared to a general-purpose graphics processing unit. We also use our Ising machine to solve a realistic electronic design automation problem—multiple patterning lithography layout decomposition—with 390–65,550 times speedup compared to the integer linear programming algorithm on a typical central processing unit.
{"title":"A scalable universal Ising machine based on interaction-centric storage and compute-in-memory","authors":"Wenshuo Yue, Teng Zhang, Zhaokun Jing, Kai Wu, Yuxiang Yang, Zhen Yang, Yongqin Wu, Weihai Bu, Kai Zheng, Jin Kang, Yibo Lin, Yaoyu Tao, Bonan Yan, Ru Huang, Yuchao Yang","doi":"10.1038/s41928-024-01228-7","DOIUrl":"https://doi.org/10.1038/s41928-024-01228-7","url":null,"abstract":"<p>Ising machines are annealing processors that can solve combinatorial optimization problems via the physical evolution of the corresponding Ising graphs. Such machines are, however, typically restricted to solving problems with certain kinds of graph topology because the spin location and connections are fixed. Here, we report a universal Ising machine that supports arbitrary Ising graph topology with reasonable hardware resources using a coarse-grained compressed sparse row method to compress and store sparse Ising graph adjacency matrices. The approach, which we term interaction-centric storage, is suitable for any kind of Ising graph and reduces the memory scaling cost. We experimentally implement the Ising machine using compute-in-memory hardware based on a 40 nm resistive random-access memory arrays. We use the machine to solve max-cut and graph colouring problems, with the latter showing a 442–1,450 factor improvement in speed and 4.1 × 10<sup>5</sup>–6.0 × 10<sup>5</sup> factor reduction in energy consumption compared to a general-purpose graphics processing unit. We also use our Ising machine to solve a realistic electronic design automation problem—multiple patterning lithography layout decomposition—with 390–65,550 times speedup compared to the integer linear programming algorithm on a typical central processing unit.</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":34.3,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141974260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-12DOI: 10.1038/s41928-024-01227-8
Mohit Arora, Iain McClenaghan, Lydia Wozniak
The complexity of the infrastructure underpinning the modern Internet has led to a lack of clarity on how to measure the energy consumption of web services and achieve sustainable web design. It is now crucial to redirect sustainability efforts in the sector towards more effective interventions.
{"title":"Priorities for net-zero web services","authors":"Mohit Arora, Iain McClenaghan, Lydia Wozniak","doi":"10.1038/s41928-024-01227-8","DOIUrl":"10.1038/s41928-024-01227-8","url":null,"abstract":"The complexity of the infrastructure underpinning the modern Internet has led to a lack of clarity on how to measure the energy consumption of web services and achieve sustainable web design. It is now crucial to redirect sustainability efforts in the sector towards more effective interventions.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141974262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-12DOI: 10.1038/s41928-024-01209-w
Eric H. Pollmann, Heyu Yin, Ilke Uguz, Agrita Dubey, Katie E. Wingel, John S. Choi, Sajjad Moazeni, Yatin Gilhotra, Victoria Andino-Pavlovsky, Adam Banees, Abhinav Parihar, Vivek Boominathan, Jacob T. Robinson, Ashok Veeraraghavan, Vincent A. Pieribone, Bijan Pesaran, Kenneth L. Shepard
Optical neurotechnologies use light to interface with neurons and can monitor and manipulate neural activity with high spatial-temporal precision over large cortical areas. There has been considerable progress in miniaturizing microscopes for head-mounted configurations, but existing devices are bulky and their application in humans will require a more non-invasive, fully implantable form factor. Here we report an ultrathin, miniaturized subdural complementary metal–oxide–semiconductor (CMOS) optical device for bidirectional optical stimulation and recording. We use a custom CMOS application-specific integrated circuit that is capable of both fluorescence imaging and optogenetic stimulation, creating a probe with a total thickness of less than 200 µm, which is thin enough to lie entirely within the subdural space of the primate brain. We show that the device can be used for imaging and optical stimulation in a mouse model and can be used to decode reach movement speed in a non-human primate.
{"title":"A subdural CMOS optical device for bidirectional neural interfacing","authors":"Eric H. Pollmann, Heyu Yin, Ilke Uguz, Agrita Dubey, Katie E. Wingel, John S. Choi, Sajjad Moazeni, Yatin Gilhotra, Victoria Andino-Pavlovsky, Adam Banees, Abhinav Parihar, Vivek Boominathan, Jacob T. Robinson, Ashok Veeraraghavan, Vincent A. Pieribone, Bijan Pesaran, Kenneth L. Shepard","doi":"10.1038/s41928-024-01209-w","DOIUrl":"https://doi.org/10.1038/s41928-024-01209-w","url":null,"abstract":"<p>Optical neurotechnologies use light to interface with neurons and can monitor and manipulate neural activity with high spatial-temporal precision over large cortical areas. There has been considerable progress in miniaturizing microscopes for head-mounted configurations, but existing devices are bulky and their application in humans will require a more non-invasive, fully implantable form factor. Here we report an ultrathin, miniaturized subdural complementary metal–oxide–semiconductor (CMOS) optical device for bidirectional optical stimulation and recording. We use a custom CMOS application-specific integrated circuit that is capable of both fluorescence imaging and optogenetic stimulation, creating a probe with a total thickness of less than 200 µm, which is thin enough to lie entirely within the subdural space of the primate brain. We show that the device can be used for imaging and optical stimulation in a mouse model and can be used to decode reach movement speed in a non-human primate.</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":34.3,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141974268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}