Conformal electronics are of use in the development of wearable and biointegrated devices. However, existing methods of creating such electronics can lead to a lack of mechanical robustness, are limited in their range of materials or require specialized equipment and complex procedures. Here we report a heat-shrinking method for fabricating conformal electronics in which semi-liquid metal circuits are patterned onto thermoplastic substrates and then heated to induce shrinkage around a target object. We develop a semi-liquid metal that can withstand shrinkage deformation and maintain long-term electrical stability. We also develop simulation tools to consider the effect of the thermoplastic film’s deformation on the final circuit pattern, which allows precise circuit designs to be created on the initially planar film. The resulting shape-adaptive electronics exhibit high durability, with minimal conductivity change after 5,000 bending and twisting cycles. We illustrate the potential of the method by creating circuits for de-icing model aircraft, robot tactile sensors, fruit temperature and humidity sensors, fingertip pulse sensors, and smart bandages. A heat-shrinking method—in which semi-liquid metal-based circuits are printed on thermoplastic films that subsequently shrink and wrap around a target object when mildly heated—can be used to create conformal electronics on various substrates, including plants and skin.
{"title":"Shape-adaptive electronics based on liquid metal circuits printed on thermoplastic films","authors":"Chengjie Jiang, Wenqiang Li, Qiushuo Wu, Zhi Wang, Kaiyan Wang, Bingyi Pan, Hui Zong, Xiaoqing Li, Jiaping Liu, Bo Yuan, Tianyu Li, Xi Tian, Xian Huang, Hongzhang Wang, Rui Guo","doi":"10.1038/s41928-025-01528-6","DOIUrl":"10.1038/s41928-025-01528-6","url":null,"abstract":"Conformal electronics are of use in the development of wearable and biointegrated devices. However, existing methods of creating such electronics can lead to a lack of mechanical robustness, are limited in their range of materials or require specialized equipment and complex procedures. Here we report a heat-shrinking method for fabricating conformal electronics in which semi-liquid metal circuits are patterned onto thermoplastic substrates and then heated to induce shrinkage around a target object. We develop a semi-liquid metal that can withstand shrinkage deformation and maintain long-term electrical stability. We also develop simulation tools to consider the effect of the thermoplastic film’s deformation on the final circuit pattern, which allows precise circuit designs to be created on the initially planar film. The resulting shape-adaptive electronics exhibit high durability, with minimal conductivity change after 5,000 bending and twisting cycles. We illustrate the potential of the method by creating circuits for de-icing model aircraft, robot tactile sensors, fruit temperature and humidity sensors, fingertip pulse sensors, and smart bandages. A heat-shrinking method—in which semi-liquid metal-based circuits are printed on thermoplastic films that subsequently shrink and wrap around a target object when mildly heated—can be used to create conformal electronics on various substrates, including plants and skin.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"9 1","pages":"45-58"},"PeriodicalIF":40.9,"publicationDate":"2026-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145956357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-09DOI: 10.1038/s41928-025-01534-8
Lei Cai, Yaoyu Tao, Teng Zhang, Chang Liu, Pek Jun Tiw, Lianfeng Yu, Zelun Pan, Longhao Yan, Haoyang Luo, Yihang Zhu, Bowen Wang, Bonan Yan, Xiyuan Tang, Ru Huang, Yuchao Yang
The Fourier transform is a powerful tool to analyse the frequency characteristics of signals. Discrete Fourier transform hardware typically implements Cooley–Tukey-based algorithms for reduced operational complexity. However, such schemes bring a sequential window schedule and separate real and imaginary computations, and their hardware implementations struggle to support runtime arbitrary radix and non-uniform discrete Fourier transform. Here we report a first-principles hetero-integrated Fourier transform system based on volatile and non-volatile memristors. Uniform vanadium oxide volatile memristor arrays provide oscillatory waves for arbitrary radix, and together with compact shaping and phase alignment circuits, runtime-calibratable frequency spectra can be generated, recording a maximum frequency of up to 1.74 MHz and a resolution down to 50 Hz. Non-volatile multilevel tantalum oxide/hafnium oxide memristor arrays are incorporated with bipolar differential conductance mapping for parallel signed discrete Fourier transform in-memory computing. Our hetero-integrated Fourier transform system can support arbitrary radix values up to 2,048, uniform or non-uniform 1D/2D discrete Fourier transform with cross-window parallelism, as well as unified real and imaginary computations, with a discrete Fourier transform accuracy up to 99.2% and O(N) operational complexity. The system can reach a throughput of 504.3 GS s−1, outperforming existing hardware by up to 96.98 times and reduce memory cost. Using volatile vanadium oxide and non-volatile tantalum oxide/hafnium oxide memristor arrays, a first-principles Fourier transform system can be created that can outperform conventional Fourier transform hardware in terms of throughput and reduce memory cost.
{"title":"A first-principles hetero-integrated Fourier transform system based on memristors","authors":"Lei Cai, Yaoyu Tao, Teng Zhang, Chang Liu, Pek Jun Tiw, Lianfeng Yu, Zelun Pan, Longhao Yan, Haoyang Luo, Yihang Zhu, Bowen Wang, Bonan Yan, Xiyuan Tang, Ru Huang, Yuchao Yang","doi":"10.1038/s41928-025-01534-8","DOIUrl":"10.1038/s41928-025-01534-8","url":null,"abstract":"The Fourier transform is a powerful tool to analyse the frequency characteristics of signals. Discrete Fourier transform hardware typically implements Cooley–Tukey-based algorithms for reduced operational complexity. However, such schemes bring a sequential window schedule and separate real and imaginary computations, and their hardware implementations struggle to support runtime arbitrary radix and non-uniform discrete Fourier transform. Here we report a first-principles hetero-integrated Fourier transform system based on volatile and non-volatile memristors. Uniform vanadium oxide volatile memristor arrays provide oscillatory waves for arbitrary radix, and together with compact shaping and phase alignment circuits, runtime-calibratable frequency spectra can be generated, recording a maximum frequency of up to 1.74 MHz and a resolution down to 50 Hz. Non-volatile multilevel tantalum oxide/hafnium oxide memristor arrays are incorporated with bipolar differential conductance mapping for parallel signed discrete Fourier transform in-memory computing. Our hetero-integrated Fourier transform system can support arbitrary radix values up to 2,048, uniform or non-uniform 1D/2D discrete Fourier transform with cross-window parallelism, as well as unified real and imaginary computations, with a discrete Fourier transform accuracy up to 99.2% and O(N) operational complexity. The system can reach a throughput of 504.3 GS s−1, outperforming existing hardware by up to 96.98 times and reduce memory cost. Using volatile vanadium oxide and non-volatile tantalum oxide/hafnium oxide memristor arrays, a first-principles Fourier transform system can be created that can outperform conventional Fourier transform hardware in terms of throughput and reduce memory cost.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"9 1","pages":"103-115"},"PeriodicalIF":40.9,"publicationDate":"2026-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145938240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The continuing development of artificial intelligence requires more powerful computing architectures. However, the large footprint of complementary-metal–oxide–semiconductor-based neurons and constraints on electric routing hinder the scaling of conventional artificial neurons and their synaptic connectivity. Here we show that memristive blinking neurons can be used to build scalable photonically linked three-dimensional neural networks. Our artificial neuron is based on a silver/poly(methyl methacrylate)/silver metal–insulator–metal memristive switching in-plane junction. Its resistive switching relies on atomic-scale filamentary dynamics and the device emits photon pulses on integrating a critical number of incoming electrical spikes, which eliminates the need for bulky peripheral circuit read-out and electrical wiring for transmitting signals. We use the memristive blinking neuron, which has a footprint of 170 nm × 240 nm, to build a photonically linked three-dimensional spiking neural network. We show that the network can perform a four-class classification task within the Google Speech dataset with an accuracy of 91.51%. We also create a high-density artificial neuron array with a pitch of 1 μm and show that it can perform an MNIST classification task with an accuracy of 92.27%. A memristive blinking neuron—relying on atomic-scale filamentary dynamics for resistive switching and emitting photon pulses on integrating a critical number of incoming electrical spikes—can be used to build photonically linked three-dimensional spiking neural networks.
{"title":"Photonically linked three-dimensional neural networks based on memristive blinking neurons","authors":"Yue Zhou, Yuetong Fang, Raphael Gisler, Hongwei Ren, Haotian Fu, Zelin Ma, Yulong Huang, Renjing Xu, Alexandre Bouhelier, Juerg Leuthold, Bojun Cheng","doi":"10.1038/s41928-025-01529-5","DOIUrl":"10.1038/s41928-025-01529-5","url":null,"abstract":"The continuing development of artificial intelligence requires more powerful computing architectures. However, the large footprint of complementary-metal–oxide–semiconductor-based neurons and constraints on electric routing hinder the scaling of conventional artificial neurons and their synaptic connectivity. Here we show that memristive blinking neurons can be used to build scalable photonically linked three-dimensional neural networks. Our artificial neuron is based on a silver/poly(methyl methacrylate)/silver metal–insulator–metal memristive switching in-plane junction. Its resistive switching relies on atomic-scale filamentary dynamics and the device emits photon pulses on integrating a critical number of incoming electrical spikes, which eliminates the need for bulky peripheral circuit read-out and electrical wiring for transmitting signals. We use the memristive blinking neuron, which has a footprint of 170 nm × 240 nm, to build a photonically linked three-dimensional spiking neural network. We show that the network can perform a four-class classification task within the Google Speech dataset with an accuracy of 91.51%. We also create a high-density artificial neuron array with a pitch of 1 μm and show that it can perform an MNIST classification task with an accuracy of 92.27%. A memristive blinking neuron—relying on atomic-scale filamentary dynamics for resistive switching and emitting photon pulses on integrating a critical number of incoming electrical spikes—can be used to build photonically linked three-dimensional spiking neural networks.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"9 1","pages":"93-102"},"PeriodicalIF":40.9,"publicationDate":"2026-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145919992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-07DOI: 10.1038/s41928-025-01540-w
Yuntao Lu, Zhoulyu Rao, Hyunseok Shim, Young Min Song, Zhiyong Fan, Chuanfei Guo, Cunjiang Yu
The human retina can provide inspiration for the development of optoelectronic devices for artificial vision systems. It has, in particular, a curved geometry for low optical aberration imaging and is capable of signal preprocessing, in part due to its high synaptic facilitation. However, it remains challenging to create artificial synaptic devices with mechanical softness, curvilinear form factors and superior synaptic facilitation. Here we report a cascaded two-stage optoelectronic synapse that uses silicon photovoltaic cells to modulate sodium-alginate-gated synaptic transistors. The photovoltaic cells and an electric double-layer capacitor convert the initial light signal into a gate voltage (stage one), which then controls the postsynaptic current in the channel of the synaptic transistor (stage two). This cascaded synaptic signal transmission mechanism results in high synaptic facilitation of the postsynaptic signal. The system exhibits stable and long-term linearly potentiated characteristics, enhancing the accuracy of pattern recognition. We use an array of the cascaded optoelectronic synapses to create a curvy, kirigami-structured neuromorphic imager, which mimics the curved geometry and neural signal transmission of the human retina and provides visual information sensing and preprocessing functions. An optoelectronic device that converts light into a postsynaptic signal after two stages of cascaded potentiation can mimic the synaptic facilitation function of the human retina and could be used to create a curvy neuromorphic imager.
{"title":"A neuromorphic imager based on a cascaded optoelectronic synapse","authors":"Yuntao Lu, Zhoulyu Rao, Hyunseok Shim, Young Min Song, Zhiyong Fan, Chuanfei Guo, Cunjiang Yu","doi":"10.1038/s41928-025-01540-w","DOIUrl":"10.1038/s41928-025-01540-w","url":null,"abstract":"The human retina can provide inspiration for the development of optoelectronic devices for artificial vision systems. It has, in particular, a curved geometry for low optical aberration imaging and is capable of signal preprocessing, in part due to its high synaptic facilitation. However, it remains challenging to create artificial synaptic devices with mechanical softness, curvilinear form factors and superior synaptic facilitation. Here we report a cascaded two-stage optoelectronic synapse that uses silicon photovoltaic cells to modulate sodium-alginate-gated synaptic transistors. The photovoltaic cells and an electric double-layer capacitor convert the initial light signal into a gate voltage (stage one), which then controls the postsynaptic current in the channel of the synaptic transistor (stage two). This cascaded synaptic signal transmission mechanism results in high synaptic facilitation of the postsynaptic signal. The system exhibits stable and long-term linearly potentiated characteristics, enhancing the accuracy of pattern recognition. We use an array of the cascaded optoelectronic synapses to create a curvy, kirigami-structured neuromorphic imager, which mimics the curved geometry and neural signal transmission of the human retina and provides visual information sensing and preprocessing functions. An optoelectronic device that converts light into a postsynaptic signal after two stages of cascaded potentiation can mimic the synaptic facilitation function of the human retina and could be used to create a curvy neuromorphic imager.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"9 2","pages":"180-188"},"PeriodicalIF":40.9,"publicationDate":"2026-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145908045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-07DOI: 10.1038/s41928-025-01504-0
Mohammad Samizadeh Nikoo, Mohamed Eleraky, Basem Abdelaziz Abdelmagid, Dongwoon Lee, Farzan Jazaeri, Adam Wang, Boce Lin, Hua Wang
Modern communication and sensing technologies rely on complementary metal–oxide–semiconductor devices based on silicon. However, continuing to improve the capabilities of such systems through the miniaturization of transistors is increasingly challenging due to short channel effects and contact resistances. Here we report switches that are based on a zero-change silicon-on-insulator process and operate through the electrical control of displacement fields and tunnelling currents in the interface between polycrystalline and bulk silicon. The switches offer a cut-off frequency of 0.75 THz and a power handling that is ten times higher than conventional transistor-based switches that use the same silicon-on-insulator process. The technology achieves sub-30-ps hysteresis-free switching, and we illustrate its capabilities in millimetre-wave transmitters with data rates exceeding 10 Gbps. Terahertz switches that are based on a zero-change silicon-on-insulator process—and operate through the electrical control of displacement fields and tunnelling currents in the interface between polycrystalline and bulk silicon—can achieve sub-30-ps switching.
{"title":"High-power millimetre-wave switches on silicon using displacement fields and tunnelling currents","authors":"Mohammad Samizadeh Nikoo, Mohamed Eleraky, Basem Abdelaziz Abdelmagid, Dongwoon Lee, Farzan Jazaeri, Adam Wang, Boce Lin, Hua Wang","doi":"10.1038/s41928-025-01504-0","DOIUrl":"10.1038/s41928-025-01504-0","url":null,"abstract":"Modern communication and sensing technologies rely on complementary metal–oxide–semiconductor devices based on silicon. However, continuing to improve the capabilities of such systems through the miniaturization of transistors is increasingly challenging due to short channel effects and contact resistances. Here we report switches that are based on a zero-change silicon-on-insulator process and operate through the electrical control of displacement fields and tunnelling currents in the interface between polycrystalline and bulk silicon. The switches offer a cut-off frequency of 0.75 THz and a power handling that is ten times higher than conventional transistor-based switches that use the same silicon-on-insulator process. The technology achieves sub-30-ps hysteresis-free switching, and we illustrate its capabilities in millimetre-wave transmitters with data rates exceeding 10 Gbps. Terahertz switches that are based on a zero-change silicon-on-insulator process—and operate through the electrical control of displacement fields and tunnelling currents in the interface between polycrystalline and bulk silicon—can achieve sub-30-ps switching.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"9 1","pages":"84-92"},"PeriodicalIF":40.9,"publicationDate":"2026-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145908043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-06DOI: 10.1038/s41928-025-01512-0
Owen Medeiros, Matteo Castellani, Valentin Karam, Reed Foster, Alejandro Simon, Francesca Incalza, Brenden Butters, Marco Colangelo, Karl K. Berggren
Scalable superconducting memory is required for the development of low-energy superconducting computers and fault-tolerant quantum computers. Conventional superconducting logic-based memory cells possess a large footprint that limits scaling; nanowire-based superconducting memory cells, although more compact, have high error rates, which hinders integration into large arrays. Here we report a 4 × 4 superconducting nanowire memory array that is designed for scalable row–column operations and has a functional density of 2.6 Mbit cm−2. Each memory cell is based on a nanowire loop consisting of two temperature-dependent superconducting switches and a variable kinetic inductor. The arrays operate at 1.3 K, where we implement and characterize multiflux quanta state storage and destructive read-out. By optimizing the write- and read-pulse sequences, we minimize bit errors and maximize operating margins. We achieve a minimum bit error rate of 10−5. We also use circuit-level simulations to understand the memory cell’s dynamics, performance limits and stability under varying pulse amplitudes. Arrays of nanowire loops consisting of two temperature-dependent superconducting switches and a variable kinetic inductor can be used to create a robust and scalable superconducting memory.
低能超导计算机和容错量子计算机的发展需要可扩展超导存储器。传统的超导逻辑存储单元占地面积大，限制了扩展；基于纳米线的超导存储单元虽然更紧凑，但错误率高，这阻碍了集成到大型阵列中。在这里，我们报告了一个4 × 4超导纳米线存储器阵列，设计用于可扩展的行列操作，其功能密度为2.6 Mbit cm - 2。每个存储单元都是基于由两个温度相关的超导开关和一个可变动力学电感组成的纳米线环路。阵列工作在1.3 K，在那里我们实现和表征多通量量子态存储和破坏性读出。通过优化写和读脉冲序列，我们最大限度地减少了比特错误和最大限度地提高了操作边际。我们实现了最小误码率为10−5。我们还使用电路级模拟来了解存储单元在不同脉冲幅度下的动态，性能限制和稳定性。由两个温度相关的超导开关和一个可变动力学电感组成的纳米线环阵列可用于创建鲁棒和可扩展的超导存储器。
{"title":"A scalable superconducting nanowire memory array with row–column addressing","authors":"Owen Medeiros, Matteo Castellani, Valentin Karam, Reed Foster, Alejandro Simon, Francesca Incalza, Brenden Butters, Marco Colangelo, Karl K. Berggren","doi":"10.1038/s41928-025-01512-0","DOIUrl":"10.1038/s41928-025-01512-0","url":null,"abstract":"Scalable superconducting memory is required for the development of low-energy superconducting computers and fault-tolerant quantum computers. Conventional superconducting logic-based memory cells possess a large footprint that limits scaling; nanowire-based superconducting memory cells, although more compact, have high error rates, which hinders integration into large arrays. Here we report a 4 × 4 superconducting nanowire memory array that is designed for scalable row–column operations and has a functional density of 2.6 Mbit cm−2. Each memory cell is based on a nanowire loop consisting of two temperature-dependent superconducting switches and a variable kinetic inductor. The arrays operate at 1.3 K, where we implement and characterize multiflux quanta state storage and destructive read-out. By optimizing the write- and read-pulse sequences, we minimize bit errors and maximize operating margins. We achieve a minimum bit error rate of 10−5. We also use circuit-level simulations to understand the memory cell’s dynamics, performance limits and stability under varying pulse amplitudes. Arrays of nanowire loops consisting of two temperature-dependent superconducting switches and a variable kinetic inductor can be used to create a robust and scalable superconducting memory.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"9 1","pages":"69-77"},"PeriodicalIF":40.9,"publicationDate":"2026-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145902856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-05DOI: 10.1038/s41928-025-01516-w
Zhipeng Li, Zhu Liu, Zhen Wang, Yikuan Deng, Shuihua Yang, Jianfeng Chen, Qihang Zeng, Yuzhe Zhong, Haitao Yang, Ze Xiong, Xi Tian, Gaosheng Li, Yang Chen, Hui Jing, John S. Ho, Cheng-Wei Qiu
Body sensor networks wirelessly interconnect multiple on-body sensors using metamaterials that are capable of supporting microwave near-field or surface-wave propagations. However, the design of such networks is typically restricted to one-dimensional unit-cell structures. Topological metamaterials are often used in photonics applications such as lasers and photon sources, but their integration with biological systems remain limited due to low flexibility, high bending loss and high energy dissipation in biological environments. Here we report flexible topological metamaterial clothing that can provide robust biosensing networks on the human body. The approach is based on two-dimensional topological modules fabricated from thin metallic conductive textiles. The resulting topological edge states improve on-body signal transmission by over three orders of magnitude (more than 30 dB) compared with conventional radiative networks, and can maintain performance under various bending angles. The modular design allows reconfiguration by varying the combination of topological phase modules. We show that the topological clothing with interconnected biosensors, and enhanced with machine learning algorithms, can monitor vital signs during exercise with an over two orders of magnitude improvement in signal-to-noise ratio and a threefold increase in accuracy compared with a system without topological clothing. Topological metamaterial clothing based on metallic conductive textiles can be used to create robust biosensing networks on the human body that can monitor vital signs during exercise.
{"title":"Body sensor networks based on flexible topological clothing","authors":"Zhipeng Li, Zhu Liu, Zhen Wang, Yikuan Deng, Shuihua Yang, Jianfeng Chen, Qihang Zeng, Yuzhe Zhong, Haitao Yang, Ze Xiong, Xi Tian, Gaosheng Li, Yang Chen, Hui Jing, John S. Ho, Cheng-Wei Qiu","doi":"10.1038/s41928-025-01516-w","DOIUrl":"10.1038/s41928-025-01516-w","url":null,"abstract":"Body sensor networks wirelessly interconnect multiple on-body sensors using metamaterials that are capable of supporting microwave near-field or surface-wave propagations. However, the design of such networks is typically restricted to one-dimensional unit-cell structures. Topological metamaterials are often used in photonics applications such as lasers and photon sources, but their integration with biological systems remain limited due to low flexibility, high bending loss and high energy dissipation in biological environments. Here we report flexible topological metamaterial clothing that can provide robust biosensing networks on the human body. The approach is based on two-dimensional topological modules fabricated from thin metallic conductive textiles. The resulting topological edge states improve on-body signal transmission by over three orders of magnitude (more than 30 dB) compared with conventional radiative networks, and can maintain performance under various bending angles. The modular design allows reconfiguration by varying the combination of topological phase modules. We show that the topological clothing with interconnected biosensors, and enhanced with machine learning algorithms, can monitor vital signs during exercise with an over two orders of magnitude improvement in signal-to-noise ratio and a threefold increase in accuracy compared with a system without topological clothing. Topological metamaterial clothing based on metallic conductive textiles can be used to create robust biosensing networks on the human body that can monitor vital signs during exercise.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"9 1","pages":"59-68"},"PeriodicalIF":40.9,"publicationDate":"2026-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145902857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-02DOI: 10.1038/s41928-025-01503-1
Yun Xia, Ting Zhu, Kai Chen, Bo Li, Yaqiang Wang, Bing Chen, Yizhuang Li, Qianduo Zhuang, Kai Wu, Jinyu Zhang, Gang Liu, Jun Sun
Metal-film-based conductors are an important element of flexible electronic devices. However, they typically suffer from fatigue damage and electrical degradation under cyclic deformation, which can limit practical use. Here we report fatigue-resistant metal films with a coherent gradient nanolayered architecture. The architecture consists of alternating stacked layers of silver and aluminium, with silver layers that become progressively thinner and finer grained. Initial crack nucleation is delayed by a combination of heterodeformation-induced strengthening, controlled grain coarsening in the silver layer and mitigation of interface stress concentrations. The moderate interface adhesion between silver and aluminium, and the multiaxial stress state induced by the gradient structure, also promote interface delamination and crack deflection, which suppresses fatigue-crack propagation. Our coherent gradient nanolayered silver/aluminium films exhibit a conductivity of over 107 S m−1 and relatively little conductivity change in both high-cycle, low-stress regimes (107 cycles at 0.7% strain) and low-cycle, high-stress regimes (105 cycles at 5% strain). Conductive films with a coherent gradient nanolayered architecture that consists of alternating stacked silver and aluminium layers can suppress crack nucleation and propagation, leading to increased resistance to mechanical cyclic fatigue.
金属薄膜导体是柔性电子器件的重要组成部分。然而，在循环变形下，它们通常会遭受疲劳损伤和电退化，这限制了它们的实际使用。在这里，我们报告了具有相干梯度纳米层结构的抗疲劳金属薄膜。该建筑由交替堆叠的银层和铝层组成，银层逐渐变得更薄、更细。异质变形诱导的强化、银层中有控制的晶粒粗化和界面应力集中的减缓共同延缓了初始裂纹形核的形成。银与铝界面的适度粘附以及梯度结构引起的多轴应力状态也促进了界面分层和裂纹偏转，从而抑制了疲劳裂纹的扩展。我们的相关梯度纳米层银/铝薄膜的电导率超过107 S m−1，在高周期、低应力状态（0.7%应变下107次循环）和低周期、高应力状态（5%应变下105次循环）下的电导率变化都相对较小。
{"title":"Fatigue-resistant metal-film-based flexible conductors with a coherent gradient nanolayered architecture","authors":"Yun Xia, Ting Zhu, Kai Chen, Bo Li, Yaqiang Wang, Bing Chen, Yizhuang Li, Qianduo Zhuang, Kai Wu, Jinyu Zhang, Gang Liu, Jun Sun","doi":"10.1038/s41928-025-01503-1","DOIUrl":"10.1038/s41928-025-01503-1","url":null,"abstract":"Metal-film-based conductors are an important element of flexible electronic devices. However, they typically suffer from fatigue damage and electrical degradation under cyclic deformation, which can limit practical use. Here we report fatigue-resistant metal films with a coherent gradient nanolayered architecture. The architecture consists of alternating stacked layers of silver and aluminium, with silver layers that become progressively thinner and finer grained. Initial crack nucleation is delayed by a combination of heterodeformation-induced strengthening, controlled grain coarsening in the silver layer and mitigation of interface stress concentrations. The moderate interface adhesion between silver and aluminium, and the multiaxial stress state induced by the gradient structure, also promote interface delamination and crack deflection, which suppresses fatigue-crack propagation. Our coherent gradient nanolayered silver/aluminium films exhibit a conductivity of over 107 S m−1 and relatively little conductivity change in both high-cycle, low-stress regimes (107 cycles at 0.7% strain) and low-cycle, high-stress regimes (105 cycles at 5% strain). Conductive films with a coherent gradient nanolayered architecture that consists of alternating stacked silver and aluminium layers can suppress crack nucleation and propagation, leading to increased resistance to mechanical cyclic fatigue.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"9 1","pages":"33-44"},"PeriodicalIF":40.9,"publicationDate":"2026-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145894961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-02DOI: 10.1038/s41928-025-01505-z
Bozhi Yin, Hayk Gevorgyan, Deniz Onural, Bohan Zhang, Anatoly Khilo, Miloš A. Popović, Vladimir M. Stojanović
The development of quantum and superconducting computer applications requires high-bandwidth and energy-efficient readout interfaces that can connect superconducting integrated circuits with a room-temperature environment. However, electrical and optical interconnect approaches involve extra amplification stages due to the low outputs of the superconducting circuits, which make them complicated, difficult to scale and a source of heat leakage. Here we describe a single-chip electronic–photonic transmitter that is driven directly by superconducting electronics and is fabricated using a commercial complementary metal–oxide–semiconductor foundry process. A laser-forwarded coherent-link architecture enables the transmitter to be directly driven at 4 K by a superconducting integrated circuit with only millivolt-level voltage swing and at a bit error rate of under 1 × 10−6. The energy efficiency of the link, at a temperature of 4 K and a laser power split ratio of 10/90, is 673 fJ per bit. An electronic–photonic transmitter chip can enable signal readout of superconducting electronics for interfacing with room-temperature environments.
{"title":"A fully packaged cryogenic optical transmitter directly interfaced with a superconducting chip","authors":"Bozhi Yin, Hayk Gevorgyan, Deniz Onural, Bohan Zhang, Anatoly Khilo, Miloš A. Popović, Vladimir M. Stojanović","doi":"10.1038/s41928-025-01505-z","DOIUrl":"10.1038/s41928-025-01505-z","url":null,"abstract":"The development of quantum and superconducting computer applications requires high-bandwidth and energy-efficient readout interfaces that can connect superconducting integrated circuits with a room-temperature environment. However, electrical and optical interconnect approaches involve extra amplification stages due to the low outputs of the superconducting circuits, which make them complicated, difficult to scale and a source of heat leakage. Here we describe a single-chip electronic–photonic transmitter that is driven directly by superconducting electronics and is fabricated using a commercial complementary metal–oxide–semiconductor foundry process. A laser-forwarded coherent-link architecture enables the transmitter to be directly driven at 4 K by a superconducting integrated circuit with only millivolt-level voltage swing and at a bit error rate of under 1 × 10−6. The energy efficiency of the link, at a temperature of 4 K and a laser power split ratio of 10/90, is 673 fJ per bit. An electronic–photonic transmitter chip can enable signal readout of superconducting electronics for interfacing with room-temperature environments.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"9 1","pages":"78-83"},"PeriodicalIF":40.9,"publicationDate":"2026-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145894962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：