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2012 IEEE International Symposium on Electromagnetic Compatibility最新文献

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Electrothermal breakdown of an intentional electromagnetic pulse injected into Ku-band gaas Mesfet-based low noise amplifier(LNA) 有意电磁脉冲注入ku波段gaas mesfet低噪声放大器(LNA)的电热击穿
Pub Date : 2012-11-12 DOI: 10.1109/ISEMC.2012.6351827
Liang Lin, Liang Zhou, W. Yin, Lin-Juan Huang
In this paper, electrothermal breakdown of a Ku-band GaAs MESFET-based low noise amplifier (LNA) is investigated in the presence of an intentional electromagnetic pulse. The injected EMP is generated by one special high power microwave system, and its waveform can be adjusted effectively. The input-output responses of a set of LNAs are measured and compared for different injected EMP widths. It is observed that the first-stage GaAs MESFET in the LNA can be easily broken down, which is mainly caused by the rapid temperature rise in its channel region. This research can provide some useful knowledge for protecting some semiconductor active devices from the attack of an injected EMP.
本文研究了在有意电磁脉冲存在下ku波段GaAs mesfet低噪声放大器(LNA)的电热击穿。注入电磁脉冲是由一个特殊的高功率微波系统产生的,其波形可以有效地调节。测量并比较了一组LNAs在不同注入EMP宽度下的输入输出响应。观察到,LNA中的第一级GaAs MESFET很容易被击穿,这主要是由于其通道区域温度快速上升造成的。该研究为保护半导体有源器件免受注入EMP的攻击提供了一些有用的知识。
{"title":"Electrothermal breakdown of an intentional electromagnetic pulse injected into Ku-band gaas Mesfet-based low noise amplifier(LNA)","authors":"Liang Lin, Liang Zhou, W. Yin, Lin-Juan Huang","doi":"10.1109/ISEMC.2012.6351827","DOIUrl":"https://doi.org/10.1109/ISEMC.2012.6351827","url":null,"abstract":"In this paper, electrothermal breakdown of a Ku-band GaAs MESFET-based low noise amplifier (LNA) is investigated in the presence of an intentional electromagnetic pulse. The injected EMP is generated by one special high power microwave system, and its waveform can be adjusted effectively. The input-output responses of a set of LNAs are measured and compared for different injected EMP widths. It is observed that the first-stage GaAs MESFET in the LNA can be easily broken down, which is mainly caused by the rapid temperature rise in its channel region. This research can provide some useful knowledge for protecting some semiconductor active devices from the attack of an injected EMP.","PeriodicalId":197346,"journal":{"name":"2012 IEEE International Symposium on Electromagnetic Compatibility","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2012-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122115331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
On lower bound antenna efficiency measurements in a reverberation chamber 混响室中下界天线效率的测量
Pub Date : 2012-11-12 DOI: 10.1109/ISEMC.2012.6351781
J. Coder, J. Ladbury, M. Gołkowski
This paper addresses a few specific aspects of measuring the lower bound of antenna efficiency in a reverberation chamber. While the initial method for measuring the lower bound of efficiency has been presented, three key revisions are discussed here: (1) an updated notation, (2) a revised method for calculating the lower bound of efficiency, and (3) a new method for combining stirring techniques. The updated antenna model notation is designed to be more general and applicable to situations with n antennas. The revised efficiency calculation targets an issue of the original method where the minimum bounding circle exceeded the unit circle. Introducing a new method of combining stirring techniques addresses a weakness of the original model. For the model to work well, it needs a very large number of paddle positions that generate a good statistical approximation of the environment (in this case, a reverberation chamber). As a possible remedy to this weakness, we propose a different way of combining stirring techniques.
本文讨论了混响室中天线效率下界测量的几个具体问题。虽然已经提出了测量效率下界的初始方法,但这里讨论了三个关键的修订:(1)更新的符号,(2)计算效率下界的修订方法,以及(3)结合搅拌技术的新方法。更新后的天线模型表示法更通用,适用于有n个天线的情况。修正后的效率计算方法针对原方法中最小边界圆超过单位圆的问题。引入一种结合搅拌技术的新方法,解决了原模型的一个缺点。为了使模型正常工作,它需要大量的桨叶位置来产生对环境的良好统计近似(在这种情况下,是混响室)。作为一种可能的补救措施,我们提出了一种不同的方法来结合搅拌技术。
{"title":"On lower bound antenna efficiency measurements in a reverberation chamber","authors":"J. Coder, J. Ladbury, M. Gołkowski","doi":"10.1109/ISEMC.2012.6351781","DOIUrl":"https://doi.org/10.1109/ISEMC.2012.6351781","url":null,"abstract":"This paper addresses a few specific aspects of measuring the lower bound of antenna efficiency in a reverberation chamber. While the initial method for measuring the lower bound of efficiency has been presented, three key revisions are discussed here: (1) an updated notation, (2) a revised method for calculating the lower bound of efficiency, and (3) a new method for combining stirring techniques. The updated antenna model notation is designed to be more general and applicable to situations with n antennas. The revised efficiency calculation targets an issue of the original method where the minimum bounding circle exceeded the unit circle. Introducing a new method of combining stirring techniques addresses a weakness of the original model. For the model to work well, it needs a very large number of paddle positions that generate a good statistical approximation of the environment (in this case, a reverberation chamber). As a possible remedy to this weakness, we propose a different way of combining stirring techniques.","PeriodicalId":197346,"journal":{"name":"2012 IEEE International Symposium on Electromagnetic Compatibility","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2012-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122184652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Crosstalk and low frequency radiation in a coupled microstrip line with a top cover 带顶盖的耦合微带线中的串扰和低频辐射
Pub Date : 2012-11-12 DOI: 10.1109/ISEMC.2012.6351758
J. Bernal, F. Mesa, D. Jackson
In this work we use a full-wave method to analyze the propagation characteristics of a coupled microstrip transmission line with a metallic top cover. This metallic top cover may be present in a microstrip structure due to a circuit package. We show that an even leaky mode and an improper odd mode can be excited in this structure at low frequencies. As a consequence, effects as radiation, power loss, and interference, which are usually found in microstrip transmission lines at high frequencies, appear instead in this structure at low frequencies, thus compromising the signal integrity on the line. We provide numerical results to demonstrate that signal propagation and crosstalk for this line cannot be accurately predicted by a conventional analysis based upon a quasi-TEM approximation and transmission line theory even at frequencies such that the cross section of the line is much smaller than the wavelength.
本文采用全波法分析了金属顶盖耦合微带传输线的传输特性。由于电路封装,这种金属顶盖可能存在于微带结构中。结果表明,在低频率下,该结构可以激发出偶漏模和不适当的奇模。因此,通常在高频微带传输线中发现的辐射、功率损耗和干扰等效应在低频微带传输线中出现,从而损害了线路上的信号完整性。我们提供的数值结果表明,即使在线路的横截面远小于波长的频率下,基于准tem近似和传输线理论的传统分析也不能准确预测该线路的信号传播和串扰。
{"title":"Crosstalk and low frequency radiation in a coupled microstrip line with a top cover","authors":"J. Bernal, F. Mesa, D. Jackson","doi":"10.1109/ISEMC.2012.6351758","DOIUrl":"https://doi.org/10.1109/ISEMC.2012.6351758","url":null,"abstract":"In this work we use a full-wave method to analyze the propagation characteristics of a coupled microstrip transmission line with a metallic top cover. This metallic top cover may be present in a microstrip structure due to a circuit package. We show that an even leaky mode and an improper odd mode can be excited in this structure at low frequencies. As a consequence, effects as radiation, power loss, and interference, which are usually found in microstrip transmission lines at high frequencies, appear instead in this structure at low frequencies, thus compromising the signal integrity on the line. We provide numerical results to demonstrate that signal propagation and crosstalk for this line cannot be accurately predicted by a conventional analysis based upon a quasi-TEM approximation and transmission line theory even at frequencies such that the cross section of the line is much smaller than the wavelength.","PeriodicalId":197346,"journal":{"name":"2012 IEEE International Symposium on Electromagnetic Compatibility","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2012-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126553615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Small licensed transmitters and their RF exposure assessment 小型授权发射机及其射频暴露评估
Pub Date : 2012-11-12 DOI: 10.1109/ISEMC.2012.6351749
Q. Yu, D. Moongilan, W. S. Majkowski
Deploying small cells, i.e., small licensed transmitters, is one of the key solutions to manage the recent data explosion and network congestion. Small cells are mainly deployed in residential or enterprise environments. Therefore, they can be located in close proximity to human bodies. Their RF output power is low, usually in the range of mW to a couple of watts. This paper addresses the RF exposure compliance for small cells, including regulations, criteria and rules in United States, Canada, Australia and European Union. In addition, small cells' RF safety requirement in various countries in relation to their RF output power levels is investigated. This information would not only help the designers understand the regulatory RF exposure compliance requirements for small cells thoroughly, but also provide them with guidance in determining the proper RF transmitting power levels for small cells. As a result, less time and lower cost would be required in meeting their global regulatory RF exposure assessment requirements.
部署小型蜂窝,即小型授权发射机,是管理最近数据爆炸和网络拥塞的关键解决方案之一。小型蜂窝主要部署在住宅或企业环境中。因此,它们可以放置在离人体很近的地方。它们的射频输出功率很低,通常在毫瓦到几瓦的范围内。本文讨论了小型基站的射频暴露合规性,包括美国、加拿大、澳大利亚和欧盟的法规、标准和规则。此外,还研究了各国对小型蜂窝的射频安全要求与其射频输出功率水平的关系。这些信息不仅可以帮助设计人员彻底了解小型蜂窝的监管RF暴露合规性要求,还可以为他们确定小型蜂窝适当的RF发射功率水平提供指导。因此,在满足其全球监管射频暴露评估要求方面需要更少的时间和更低的成本。
{"title":"Small licensed transmitters and their RF exposure assessment","authors":"Q. Yu, D. Moongilan, W. S. Majkowski","doi":"10.1109/ISEMC.2012.6351749","DOIUrl":"https://doi.org/10.1109/ISEMC.2012.6351749","url":null,"abstract":"Deploying small cells, i.e., small licensed transmitters, is one of the key solutions to manage the recent data explosion and network congestion. Small cells are mainly deployed in residential or enterprise environments. Therefore, they can be located in close proximity to human bodies. Their RF output power is low, usually in the range of mW to a couple of watts. This paper addresses the RF exposure compliance for small cells, including regulations, criteria and rules in United States, Canada, Australia and European Union. In addition, small cells' RF safety requirement in various countries in relation to their RF output power levels is investigated. This information would not only help the designers understand the regulatory RF exposure compliance requirements for small cells thoroughly, but also provide them with guidance in determining the proper RF transmitting power levels for small cells. As a result, less time and lower cost would be required in meeting their global regulatory RF exposure assessment requirements.","PeriodicalId":197346,"journal":{"name":"2012 IEEE International Symposium on Electromagnetic Compatibility","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2012-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127735997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Equivalent current source of side-channel signal for countermeasure design with analog circuit simulator 用模拟电路模拟器进行对抗设计的边道信号等效电流源
Pub Date : 2012-11-12 DOI: 10.1109/ISEMC.2012.6351661
T. Amano, K. Iokibe, Y. Toyota
Side-channel attack is a cryptanalytic attack based on information gained from the physical implementation of a cryptographic IC. The simultaneous switching noise (SSN) current is generated as logic gates in cryptographic IC switch simultaneously in encryption processes. SSN current is a cause of electromagnetic interference (EMI). In this study, linear equivalent circuit modeling was examined for the sake of a developing method to evaluate cryptographic systems before fabrication. A linear equivalent circuit model of a cryptographic FPGA, in which an AES algorithm had been implemented, was determined from experimental measurements. The model was implemented into a commercial analog circuit simulator, and the SSN current was estimated under three configurations among which a decoupling circuit, used as a countermeasure, was changed. Estimated current traces were analyzed statistically by using the correlation power analysis (CPA) method to obtain correlation values, a major index security against side-channel attacks. Variation of the correlation values with a decoupling configuration agreed with the corresponding experimental results also obtained in this study. This means that the security of cryptographic devices against side-channel attacks based on analysis of the SSN current can be estimated by using the equivalent circuit model before fabrication.
侧信道攻击是一种基于从加密IC的物理实现中获取信息的密码分析攻击,在加密过程中,同步开关噪声(SSN)电流作为逻辑门同时在加密IC的开关中产生。SSN电流是电磁干扰(EMI)的一个原因。在这项研究中,线性等效电路建模的目的是为了开发一种方法来评估在制造之前的密码系统。通过实验测量,确定了一种加密FPGA的线性等效电路模型,其中实现了AES算法。在商业模拟电路模拟器中实现了该模型,并在三种配置下估计了SSN电流,其中改变了去耦电路作为对抗电路。利用相关功率分析(CPA)方法对估计的电流迹线进行统计分析,获得相关值,这是防止侧信道攻击的主要指标。相关值随解耦组态的变化也与实验结果一致。这意味着基于SSN电流分析的加密设备的安全性可以通过在制造前使用等效电路模型来估计。
{"title":"Equivalent current source of side-channel signal for countermeasure design with analog circuit simulator","authors":"T. Amano, K. Iokibe, Y. Toyota","doi":"10.1109/ISEMC.2012.6351661","DOIUrl":"https://doi.org/10.1109/ISEMC.2012.6351661","url":null,"abstract":"Side-channel attack is a cryptanalytic attack based on information gained from the physical implementation of a cryptographic IC. The simultaneous switching noise (SSN) current is generated as logic gates in cryptographic IC switch simultaneously in encryption processes. SSN current is a cause of electromagnetic interference (EMI). In this study, linear equivalent circuit modeling was examined for the sake of a developing method to evaluate cryptographic systems before fabrication. A linear equivalent circuit model of a cryptographic FPGA, in which an AES algorithm had been implemented, was determined from experimental measurements. The model was implemented into a commercial analog circuit simulator, and the SSN current was estimated under three configurations among which a decoupling circuit, used as a countermeasure, was changed. Estimated current traces were analyzed statistically by using the correlation power analysis (CPA) method to obtain correlation values, a major index security against side-channel attacks. Variation of the correlation values with a decoupling configuration agreed with the corresponding experimental results also obtained in this study. This means that the security of cryptographic devices against side-channel attacks based on analysis of the SSN current can be estimated by using the equivalent circuit model before fabrication.","PeriodicalId":197346,"journal":{"name":"2012 IEEE International Symposium on Electromagnetic Compatibility","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2012-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132423291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Enhance the test reproducibility of radiated emission by defined cable termination 通过定义电缆终端,提高辐射发射测试的再现性
Pub Date : 2012-11-12 DOI: 10.1109/ISEMC.2012.6351836
Bor-Lin Lee, Yi-Wei Wang, J.-P Wang
In this paper, we compared the measured radiated emission levels by real samples according to CISPR 22 at different laboratories. We observed the maximum test difference is 11.9dB over laboratories, which is much higher than claimed measurement instrument uncertainty. We studied various test conditions and concluded that the mains impedance of laboratory is the key factor to measured emission levels. The mechanism for the impedance to affect the radiated emission was explained. By using an impedance adapter to provide defined impedance for the cable termination, the test reproducibility was improved. The maximum test difference is reduced from 11.9dB to 6.4dB over laboratories.
在本文中,我们比较了实际样品根据CISPR 22在不同实验室测量的辐射发射水平。我们观察到实验室之间的最大测试差异为11.9dB,远远高于声称的测量仪器不确定度。通过对各种测试条件的研究,得出实验室的市电阻抗是测量辐射水平的关键因素。解释了阻抗影响辐射发射的机理。通过使用阻抗适配器为电缆终端提供定义阻抗,提高了测试的再现性。最大测试差从实验室的11.9dB降低到6.4dB。
{"title":"Enhance the test reproducibility of radiated emission by defined cable termination","authors":"Bor-Lin Lee, Yi-Wei Wang, J.-P Wang","doi":"10.1109/ISEMC.2012.6351836","DOIUrl":"https://doi.org/10.1109/ISEMC.2012.6351836","url":null,"abstract":"In this paper, we compared the measured radiated emission levels by real samples according to CISPR 22 at different laboratories. We observed the maximum test difference is 11.9dB over laboratories, which is much higher than claimed measurement instrument uncertainty. We studied various test conditions and concluded that the mains impedance of laboratory is the key factor to measured emission levels. The mechanism for the impedance to affect the radiated emission was explained. By using an impedance adapter to provide defined impedance for the cable termination, the test reproducibility was improved. The maximum test difference is reduced from 11.9dB to 6.4dB over laboratories.","PeriodicalId":197346,"journal":{"name":"2012 IEEE International Symposium on Electromagnetic Compatibility","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2012-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131672180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Analytical models for the frequency response of multi-layer graphene nanoribbon interconnects 多层石墨烯纳米带互连的频率响应分析模型
Pub Date : 2012-11-12 DOI: 10.1109/ISEMC.2012.6351837
V. Kumar, A. Naeemi
Analytical models for frequency response of multilayer graphene interconnects are obtained by a general multi-conductor analysis approach. The dependence of frequency response on the number of layers is studied for two types of contacts: top and side contacts. Although virtually all experiments on multi-layer graphene use top contacts that couple only to the top layer, the analytical models available consider side contacts that couple to all the layers. It is shown that for side contacts, the frequency response improves continuously with number of layers, unlike the top contacts, which show very little improvement beyond a few layers. The delay and energy-delay-product obtained from the frequency response are minimized at some optimal number of layers, which is dependent on the interconnect length.
采用一般的多导体分析方法,得到了多层石墨烯互连的频率响应分析模型。研究了顶触点和侧触点两种触点的频率响应与层数的关系。尽管几乎所有关于多层石墨烯的实验都使用仅与顶层耦合的顶部触点,但现有的分析模型考虑了与所有层耦合的侧触点。结果表明,对于侧触点,频率响应随层数的增加而不断提高,而顶部触点的频率响应在几层以上几乎没有提高。由频率响应得到的延迟和能量延迟积在与互连长度有关的最佳层数处最小。
{"title":"Analytical models for the frequency response of multi-layer graphene nanoribbon interconnects","authors":"V. Kumar, A. Naeemi","doi":"10.1109/ISEMC.2012.6351837","DOIUrl":"https://doi.org/10.1109/ISEMC.2012.6351837","url":null,"abstract":"Analytical models for frequency response of multilayer graphene interconnects are obtained by a general multi-conductor analysis approach. The dependence of frequency response on the number of layers is studied for two types of contacts: top and side contacts. Although virtually all experiments on multi-layer graphene use top contacts that couple only to the top layer, the analytical models available consider side contacts that couple to all the layers. It is shown that for side contacts, the frequency response improves continuously with number of layers, unlike the top contacts, which show very little improvement beyond a few layers. The delay and energy-delay-product obtained from the frequency response are minimized at some optimal number of layers, which is dependent on the interconnect length.","PeriodicalId":197346,"journal":{"name":"2012 IEEE International Symposium on Electromagnetic Compatibility","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2012-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129808113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Computational study of external fixation devices surface heating in MRI RF environment MRI射频环境下外固定装置表面加热的计算研究
Pub Date : 2012-11-12 DOI: 10.1109/ISEMC.2012.6351691
Yan Liu, Jianxiang Shen, W. Kainz, Songsong Qian, Wen Wu, Ji Chen
Heating effect by external fixation devices under MRI RF field was studied numerically for both 1.5-T and 3-T MRI systems. It is found that changing insertion depth and pin spacing could largely affect the surface heating level. In 1.5-T MRI, smaller insertion depth and larger pin spacing will produce larger temperature rise. However, for 3T system, the relation is not very clear when insertion depth became larger than 5cm or when pin spacing became larger than 20cm. Effect of connection bar material on external fixator is also studied and the heating mechanism of the device is analysed.
对1.5-T和3-T MRI系统外固定装置在MRI射频场下的加热效应进行了数值研究。研究发现,插针深度和插针间距的变化对表面加热水平有很大影响。在1.5 t MRI中,较小的插入深度和较大的引脚间距会产生较大的温升。而对于3T体系,当插入深度大于5cm或引脚间距大于20cm时,这种关系就不太清楚了。研究了连接杆材料对外固定架的影响,并分析了该装置的加热机理。
{"title":"Computational study of external fixation devices surface heating in MRI RF environment","authors":"Yan Liu, Jianxiang Shen, W. Kainz, Songsong Qian, Wen Wu, Ji Chen","doi":"10.1109/ISEMC.2012.6351691","DOIUrl":"https://doi.org/10.1109/ISEMC.2012.6351691","url":null,"abstract":"Heating effect by external fixation devices under MRI RF field was studied numerically for both 1.5-T and 3-T MRI systems. It is found that changing insertion depth and pin spacing could largely affect the surface heating level. In 1.5-T MRI, smaller insertion depth and larger pin spacing will produce larger temperature rise. However, for 3T system, the relation is not very clear when insertion depth became larger than 5cm or when pin spacing became larger than 20cm. Effect of connection bar material on external fixator is also studied and the heating mechanism of the device is analysed.","PeriodicalId":197346,"journal":{"name":"2012 IEEE International Symposium on Electromagnetic Compatibility","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2012-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133674679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
CISPR 32 vs. ANSI C63.4: Color bars, scrolling H patterns, and the quasi-peak detector CISPR 32 vs. ANSI C63.4:色条、滚动H型和准峰值检测器
Pub Date : 2012-11-12 DOI: 10.1109/ISEMC.2012.6351835
D. Arnett
This paper analyzes the radio emission differences between the display images specified under CISPR 32 and those specified under ANSI C63.4, with a focus on radiated emissions from information technology equipment and the characteristics of a quasi-peak detector.
本文分析了CISPR 32标准和ANSI C63.4标准下显示图像的无线电发射差异,重点分析了信息技术设备的辐射发射和准峰值检测器的特性。
{"title":"CISPR 32 vs. ANSI C63.4: Color bars, scrolling H patterns, and the quasi-peak detector","authors":"D. Arnett","doi":"10.1109/ISEMC.2012.6351835","DOIUrl":"https://doi.org/10.1109/ISEMC.2012.6351835","url":null,"abstract":"This paper analyzes the radio emission differences between the display images specified under CISPR 32 and those specified under ANSI C63.4, with a focus on radiated emissions from information technology equipment and the characteristics of a quasi-peak detector.","PeriodicalId":197346,"journal":{"name":"2012 IEEE International Symposium on Electromagnetic Compatibility","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2012-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124680808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A low-frequency model for E-field and B-field coupling into a folded antenna with two gaps 双间隙折叠天线中e场和b场耦合的低频模型
Pub Date : 2012-11-12 DOI: 10.1109/ISEMC.2012.6351800
M. Perkins, M. Ong, C. L. Robbins
Electric field coupling into electrically small monopoles/dipoles and magnetic field coupling into electrically small loop antennas has been investigated extensively due to their applicability to a wide range of applications. However, under certain conditions electrically small folded antenna structures exist in which both coupling mechanisms must be included simultaneously in order to perform an accurate system analysis. In this paper we present a low frequency model that includes both electric and magnetic field coupling simultaneously for a folded antenna with two gaps. Values for a circuit model are found using an electrostatic finite element code and a full wave frequency domain finite element code. The circuit model is then validated by a full wave finite difference time domain code. For the time domain analysis the antenna structure is excited by fields from a lightning pulse. The time domain simulation has excellent agreement with the circuit model that is presented.
电场耦合成电小单极子/偶极子和磁场耦合成电小环形天线由于其广泛的适用性而得到了广泛的研究。然而,在某些条件下,存在电小型折叠天线结构,其中必须同时包含两种耦合机制才能进行准确的系统分析。本文提出了一种同时包含电场和磁场耦合的双间隙折叠天线的低频模型。用静电有限元程序和全波频域有限元程序求出电路模型的值。然后用全波时域有限差分代码对电路模型进行了验证。在时域分析中,天线结构受到雷电脉冲场的激励。时域仿真结果与所提出的电路模型吻合良好。
{"title":"A low-frequency model for E-field and B-field coupling into a folded antenna with two gaps","authors":"M. Perkins, M. Ong, C. L. Robbins","doi":"10.1109/ISEMC.2012.6351800","DOIUrl":"https://doi.org/10.1109/ISEMC.2012.6351800","url":null,"abstract":"Electric field coupling into electrically small monopoles/dipoles and magnetic field coupling into electrically small loop antennas has been investigated extensively due to their applicability to a wide range of applications. However, under certain conditions electrically small folded antenna structures exist in which both coupling mechanisms must be included simultaneously in order to perform an accurate system analysis. In this paper we present a low frequency model that includes both electric and magnetic field coupling simultaneously for a folded antenna with two gaps. Values for a circuit model are found using an electrostatic finite element code and a full wave frequency domain finite element code. The circuit model is then validated by a full wave finite difference time domain code. For the time domain analysis the antenna structure is excited by fields from a lightning pulse. The time domain simulation has excellent agreement with the circuit model that is presented.","PeriodicalId":197346,"journal":{"name":"2012 IEEE International Symposium on Electromagnetic Compatibility","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2012-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127704376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
2012 IEEE International Symposium on Electromagnetic Compatibility
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