Yuhei Seki, Minami Yoshihara, Seong‐Woo Kim, Koji Koyama, Yasushi Hoshino
The low‐concentration boron doping is performed from 1016 to 1018 cm−3 by ion implantation into heteroepitaxially synthesized large‐area diamond and electrical properties are investigated. Photoluminescence analysis is first carried out to clarify the optical properties of the heteroepitaxial diamond substrate. As a result, defect complexes of nitrogen‐vacancy and silicon‐vacancy are hardly detected in this substrate, suggesting that optically high‐purity diamond can be accomplished by heteroepitaxial growth. Then, the electrical properties of resistivity, mobility, carrier concentration, and conductive type by Hall effect measurements are investigated. For the samples with doping concentrations higher than 1016 cm−3, the electrical activation of implanted B acting as acceptors is confirmed. The compensation ratio for the sample with 3.5 × 1017 cm−3 concentration reaches 76%, indicating the presence of compensating donor‐like centers. With increasing the doping concentration to 3.5 × 1018 cm−3, the compensation ratio is significantly reduced to 35%. The observed mobility of the higher doped sample takes almost the ideal value observed for the sample doped by chemical vapor deposition process. It is suggested that the heteroepitaxial synthesis of large‐area and high‐purity substrates should contribute to the further development of the application to electronic, optical, and sensing devices in the future.
{"title":"Light B Doping by Ion Implantation into High‐Purity Heteroepitaxial Diamond","authors":"Yuhei Seki, Minami Yoshihara, Seong‐Woo Kim, Koji Koyama, Yasushi Hoshino","doi":"10.1002/pssa.202400159","DOIUrl":"https://doi.org/10.1002/pssa.202400159","url":null,"abstract":"The low‐concentration boron doping is performed from 10<jats:sup>16</jats:sup> to 10<jats:sup>18</jats:sup> cm<jats:sup>−3</jats:sup> by ion implantation into heteroepitaxially synthesized large‐area diamond and electrical properties are investigated. Photoluminescence analysis is first carried out to clarify the optical properties of the heteroepitaxial diamond substrate. As a result, defect complexes of nitrogen‐vacancy and silicon‐vacancy are hardly detected in this substrate, suggesting that optically high‐purity diamond can be accomplished by heteroepitaxial growth. Then, the electrical properties of resistivity, mobility, carrier concentration, and conductive type by Hall effect measurements are investigated. For the samples with doping concentrations higher than 10<jats:sup>16</jats:sup> cm<jats:sup>−3</jats:sup>, the electrical activation of implanted B acting as acceptors is confirmed. The compensation ratio for the sample with 3.5 × 10<jats:sup>17</jats:sup> cm<jats:sup>−3</jats:sup> concentration reaches 76%, indicating the presence of compensating donor‐like centers. With increasing the doping concentration to 3.5 × 10<jats:sup>18</jats:sup> cm<jats:sup>−3</jats:sup>, the compensation ratio is significantly reduced to 35%. The observed mobility of the higher doped sample takes almost the ideal value observed for the sample doped by chemical vapor deposition process. It is suggested that the heteroepitaxial synthesis of large‐area and high‐purity substrates should contribute to the further development of the application to electronic, optical, and sensing devices in the future.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"23 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141575252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Daniel Caudevilla, Francisco José Pérez‐Zenteno, Sebastián Duarte‐Cano, Sari Algaidy, Rafael Benítez‐Fernández, Guilleromo Godoy‐Pérez, Javier Olea, Enrique San Andrés, Rodrigo García‐Hernansanz, Álvaro del Prado, Ignacio Mártil, David Pastor, Eric García‐Hemme
Herein, the structural properties and chemical composition of Ge samples implanted with tellurium at cryogenic temperatures are analyzed, focusing on the role of the native oxide. For germanium, cryogenic‐temperature implantation is a requirement to achieve hyperdoped impurity concentrations while simultaneously preventing surface porosity. In this work, the critical role of the thin native germanium oxide is demonstrated when performing ion implantations at temperatures close to the liquid nitrogen temperature. The structural and chemical composition of tellurium‐implanted samples as a function of the implanted dose from 5 × 1014 to 5 × 1015 cm−2 is analyzed. After a laser melting process, the incorporated oxygen is diffused to the surface forming again a GeOx layer which retains a large fraction of the total implanted dose. These detrimental effects can be eliminated by a selective etching of the native oxide layer prior to the ion implantation process. These effects have been also observed when implanting on Si substrates. This work identifies key aspects for conducting implantations at cryogenic temperatures, that are otherwise negligible for ion implanting at room temperature.
{"title":"Native Oxide Layer Role during Cryogenic‐Temperature Ion Implantations in Germanium","authors":"Daniel Caudevilla, Francisco José Pérez‐Zenteno, Sebastián Duarte‐Cano, Sari Algaidy, Rafael Benítez‐Fernández, Guilleromo Godoy‐Pérez, Javier Olea, Enrique San Andrés, Rodrigo García‐Hernansanz, Álvaro del Prado, Ignacio Mártil, David Pastor, Eric García‐Hemme","doi":"10.1002/pssa.202400124","DOIUrl":"https://doi.org/10.1002/pssa.202400124","url":null,"abstract":"Herein, the structural properties and chemical composition of Ge samples implanted with tellurium at cryogenic temperatures are analyzed, focusing on the role of the native oxide. For germanium, cryogenic‐temperature implantation is a requirement to achieve hyperdoped impurity concentrations while simultaneously preventing surface porosity. In this work, the critical role of the thin native germanium oxide is demonstrated when performing ion implantations at temperatures close to the liquid nitrogen temperature. The structural and chemical composition of tellurium‐implanted samples as a function of the implanted dose from 5 × 10<jats:sup>14</jats:sup> to 5 × 10<jats:sup>15</jats:sup> cm<jats:sup>−2</jats:sup> is analyzed. After a laser melting process, the incorporated oxygen is diffused to the surface forming again a GeO<jats:sub><jats:italic>x</jats:italic></jats:sub> layer which retains a large fraction of the total implanted dose. These detrimental effects can be eliminated by a selective etching of the native oxide layer prior to the ion implantation process. These effects have been also observed when implanting on Si substrates. This work identifies key aspects for conducting implantations at cryogenic temperatures, that are otherwise negligible for ion implanting at room temperature.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"55 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141575337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The melt‐quenching technique is used to fabricate calcium sodium aluminum borate glasses (Sm: ANCB) doped with varying concentrations of Sm3+ ions. Characteristics of ANCBSm glasses, including density, molar volume, refractive index, absorption, emission (via visible light, X‐ray, and proton excitation), decay time, and CIE color coordinates, are analyzed. The density, molar volume, and refractive index of ANCBSm glass increased with Sm2O3 concentration. Sm3+ ions enabled photon absorption in both visible and NIR regions, with a strong reddish‐orange emission at 600 nm due to the 6H5/2 → 6P3/2 transition under various excitations. X‐ray excitation is also compared with BGO scintillation crystals. The J–O theory predicted the radiative properties of Sm3+ ion emission levels. Decay curves of the 6H5/2 levels showed a single exponential nature with a millisecond‐order lifetime. CIE chromaticity of ANCBSm glasses is in the reddish‐orange region. ANCBSm glasses have potential applications in orange laser medium material.
{"title":"Concentration Dependence Orange Light Generation Through Sm3+‐Doped Soda Lime Alumino Borate Glasses for Orange Laser Medium Material","authors":"Nawarut Jarucha, Yotsakit Ruangtaweep, Piyachat Meejitpaisan, Hong Joo Kim, Phongnared Boontueng, Chinorat Kobdaj, Narongrit Ritjoho, Taweap Sanghangthum, Damir Valiev, Jakrapong Kaewkhao","doi":"10.1002/pssa.202400174","DOIUrl":"https://doi.org/10.1002/pssa.202400174","url":null,"abstract":"The melt‐quenching technique is used to fabricate calcium sodium aluminum borate glasses (Sm: ANCB) doped with varying concentrations of Sm<jats:sup>3+</jats:sup> ions. Characteristics of ANCBSm glasses, including density, molar volume, refractive index, absorption, emission (via visible light, X‐ray, and proton excitation), decay time, and CIE color coordinates, are analyzed. The density, molar volume, and refractive index of ANCBSm glass increased with Sm<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> concentration. Sm<jats:sup>3+</jats:sup> ions enabled photon absorption in both visible and NIR regions, with a strong reddish‐orange emission at 600 nm due to the <jats:sup>6</jats:sup>H<jats:sub>5/2</jats:sub> → <jats:sup>6</jats:sup>P<jats:sub>3/2</jats:sub> transition under various excitations. X‐ray excitation is also compared with BGO scintillation crystals. The J–O theory predicted the radiative properties of Sm<jats:sup>3+</jats:sup> ion emission levels. Decay curves of the <jats:sup>6</jats:sup>H<jats:sub>5/2</jats:sub> levels showed a single exponential nature with a millisecond‐order lifetime. CIE chromaticity of ANCBSm glasses is in the reddish‐orange region. ANCBSm glasses have potential applications in orange laser medium material.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"41 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141575336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
AlGaN/GaN high electron mobility transistors (HEMTs) with different GaN channel layers grown on AlN buffer layer are fabricated and investigated in order to optimize the device performances and to study the noise properties. To investigate the strain effect of the GaN channel layer grown on the AlN buffer layer, the positive shift of Raman peak is observed as the GaN channel becomes thinner. The threshold voltages (Vth) of the fabricated devices shift to positive direction according to the decreased GaN channel layer due to the decreased 2‐dimensional electron gas (2DEG) and deteriorated crystal quality of GaN channel layer. All devices demonstrated 1/f noise properties and the dominance of the carrier number fluctuations (CNF) noise mechanism. The largest trap density (Nt) value in the narrowest GaN channel device is because of the degraded crystal quality and the enhanced strain effect of the GaN channel layer. However, the lowest noise levels at the drain current (Id) > 10−6 A for the device with the GaN channel thickness of 30 nm grown on AlN buffer layer are observed to be due to the fully depleted GaN channel layer although its poor crystal quality.
为了优化器件性能和研究噪声特性，我们制作并研究了在氮化镓缓冲层上生长不同氮化镓沟道层的氮化镓/氮化镓高电子迁移率晶体管（HEMT）。为了研究生长在氮化镓缓冲层上的氮化镓沟道层的应变效应，观察到随着氮化镓沟道变薄，拉曼峰出现正移。由于二维电子气体（2DEG）的减少和 GaN 沟道层晶体质量的恶化，所制造器件的阈值电压（Vth）随 GaN 沟道层的减少而向正方向移动。所有器件都具有 1/f 噪声特性，载流子数波动（CNF）噪声机制占主导地位。最窄氮化镓沟道器件的陷阱密度（Nt）值最大，这是因为氮化镓沟道层的晶体质量退化和应变效应增强。然而，在氮化镓缓冲层上生长的氮化镓沟道厚度为 30 nm 的器件在漏极电流 (Id) > 10-6 A 时的噪声水平最低，这是因为氮化镓沟道层虽然晶体质量较差，但已完全耗尽。
{"title":"Device and Noise Performances of AlGaN/GaN High Electron Mobility Transistors with Various GaN Channel Layers Grown on AlN Buffer Layer","authors":"Ki‐Sik Im, Minho Kim, Okhyun Nam","doi":"10.1002/pssa.202400014","DOIUrl":"https://doi.org/10.1002/pssa.202400014","url":null,"abstract":"AlGaN/GaN high electron mobility transistors (HEMTs) with different GaN channel layers grown on AlN buffer layer are fabricated and investigated in order to optimize the device performances and to study the noise properties. To investigate the strain effect of the GaN channel layer grown on the AlN buffer layer, the positive shift of Raman peak is observed as the GaN channel becomes thinner. The threshold voltages (<jats:italic>V</jats:italic><jats:sub>th</jats:sub>) of the fabricated devices shift to positive direction according to the decreased GaN channel layer due to the decreased 2‐dimensional electron gas (2DEG) and deteriorated crystal quality of GaN channel layer. All devices demonstrated 1/<jats:italic>f</jats:italic> noise properties and the dominance of the carrier number fluctuations (CNF) noise mechanism. The largest trap density (<jats:italic>N</jats:italic><jats:sub>t</jats:sub>) value in the narrowest GaN channel device is because of the degraded crystal quality and the enhanced strain effect of the GaN channel layer. However, the lowest noise levels at the drain current (<jats:italic>I</jats:italic><jats:sub>d</jats:sub>) > 10<jats:sup>−6</jats:sup> A for the device with the GaN channel thickness of 30 nm grown on AlN buffer layer are observed to be due to the fully depleted GaN channel layer although its poor crystal quality.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"34 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141575338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A combination of fluorescent SiC (f‐SiC) and porous f‐SiC is a promising phosphor material for pure white light emission. Herein, the anodic oxidation condition is optimized to produce porous f‐SiC. Furthermore, a hybridly packaged white light emitting diode (LED) package composed of f‐SiC/porous f‐SiC stacks with a nitride‐based NUV‐LED as an excitation source is fabricated. A distinct pure white light emission and the peak luminous efficacy of 11.6 lm W−1 at a forward current of 10 mA in the NUV‐LED are observed. At the peak luminous efficacy, the estimated internal quantum efficiency of the f‐SiC/porous f‐SiC stacks is ≈80% as the package involved several types of optical and energy losses.
{"title":"Hybridly Packaged White Light Emitting Diode Composed of Fluorescent SiC and Nitride‐Based Near‐Ultraviolet Light Emitting Diode","authors":"Taisei Mizuno, Syota Akiyoshi, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Yiyu Ou, Haiyan Ou","doi":"10.1002/pssa.202400118","DOIUrl":"https://doi.org/10.1002/pssa.202400118","url":null,"abstract":"A combination of fluorescent SiC (f‐SiC) and porous f‐SiC is a promising phosphor material for pure white light emission. Herein, the anodic oxidation condition is optimized to produce porous f‐SiC. Furthermore, a hybridly packaged white light emitting diode (LED) package composed of f‐SiC/porous f‐SiC stacks with a nitride‐based NUV‐LED as an excitation source is fabricated. A distinct pure white light emission and the peak luminous efficacy of 11.6 lm W<jats:sup>−1</jats:sup> at a forward current of 10 mA in the NUV‐LED are observed. At the peak luminous efficacy, the estimated internal quantum efficiency of the f‐SiC/porous f‐SiC stacks is ≈80% as the package involved several types of optical and energy losses.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"66 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141575340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Martin Konrad, Gianina Popescu‐Pelin, Gabriel Socol, Andrei Ionut Mardare, Achim Walter Hassel
Combinatorial analysis of Ag–Pd alloy thin films shows the formation of a solid solution with the face‐centered cubic structure for all investigated alloy compositions. Using mixed matter theory and the high field model, oxide growth upon applying an anodic potential is indicated. Electrochemical impedance spectroscopy supports the idea of oxide formation based on a change in behavior correlated to a sharp increase in oxide formation as indicated by cyclic voltammetry measurements. After polarization at 4 V, a stable total impedance and increasingly less‐pronounced phase shift are detected in the frequency range of 100 mHz to 10 kHz, which encompasses the common range of application of active implantable medical devices (AIMD). Upon fitting the measured impedance data with the Randles circuit, capacitances are determined in the nF cm−2 range for the investigated alloys and attributed to the formed mixed oxide layer. Charge transfer resistances are found to be in the kΩ cm−2 range. No correlation between alloy composition and capacitance or resistance can be detected so far. These findings indicate a fundamental applicability of Ag–Pd alloys for use in AIMD.
{"title":"Combinatorial Analysis of Silver‐Palladium Alloy Thin Film Libraries","authors":"Martin Konrad, Gianina Popescu‐Pelin, Gabriel Socol, Andrei Ionut Mardare, Achim Walter Hassel","doi":"10.1002/pssa.202400355","DOIUrl":"https://doi.org/10.1002/pssa.202400355","url":null,"abstract":"Combinatorial analysis of Ag–Pd alloy thin films shows the formation of a solid solution with the face‐centered cubic structure for all investigated alloy compositions. Using mixed matter theory and the high field model, oxide growth upon applying an anodic potential is indicated. Electrochemical impedance spectroscopy supports the idea of oxide formation based on a change in behavior correlated to a sharp increase in oxide formation as indicated by cyclic voltammetry measurements. After polarization at 4 V, a stable total impedance and increasingly less‐pronounced phase shift are detected in the frequency range of 100 mHz to 10 kHz, which encompasses the common range of application of active implantable medical devices (AIMD). Upon fitting the measured impedance data with the Randles circuit, capacitances are determined in the nF cm<jats:sup>−2</jats:sup> range for the investigated alloys and attributed to the formed mixed oxide layer. Charge transfer resistances are found to be in the kΩ cm<jats:sup>−2</jats:sup> range. No correlation between alloy composition and capacitance or resistance can be detected so far. These findings indicate a fundamental applicability of Ag–Pd alloys for use in AIMD.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"24 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141575335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yana Suchikova, Anastasiia Lysak, Sergii Kovachov, Marina Konuhova, Yaroslav Zhydachevskyy, Anatoli I. Popov
Herein, the impact of arsenolite oxide (As2O3) crystallites on the structural and optical properties of porous gallium arsenide (GaAs) is examined, focusing on understanding the potential passivation effect and its influence on material stability and safety. Utilizing a comprehensive set of analytical methods, including cathodoluminescence (CL) spectroscopy, Raman scattering spectroscopy, and X‐ray diffraction, the interaction between the GaAs substrate and arsenolite crystallites is characterized. The results indicate that the crystallites do not significantly alter the electronic and optical properties of the underlying GaAs, suggesting a possible passivating effect that could enhance device performance. However, concerns regarding arsenolite's environmental stability and toxicity prompt a cautious approach to its application. Herein, the need for further research into conditions conducive to natural oxide formation, exploration of alternative passivation strategies, and development of safe and stable oxide layers is underscored. Reproducible results are necessary to confirm the differences in CL signals between samples, as the current findings are based on single measurements.
本文研究了氧化砷（As2O3）晶体对多孔砷化镓（GaAs）结构和光学特性的影响，重点是了解潜在的钝化效应及其对材料稳定性和安全性的影响。利用阴极发光 (CL) 光谱法、拉曼散射光谱法和 X 射线衍射法等一整套分析方法，对砷化镓基底和砷化镓晶体之间的相互作用进行了表征。结果表明，这些结晶不会显著改变底层砷化镓的电子和光学特性，这表明砷化镓可能具有钝化效应，从而提高器件性能。然而，由于人们对亚砷酸盐的环境稳定性和毒性存在担忧，因此对其应用持谨慎态度。因此，需要进一步研究有利于自然氧化物形成的条件、探索替代钝化策略以及开发安全稳定的氧化物层。由于目前的研究结果是基于单次测量得出的，因此需要可重复的结果来确认不同样品之间 CL 信号的差异。
{"title":"Investigation of the Impact of Crystalline Arsenolite Oxide Formations on Porous Gallium Arsenide","authors":"Yana Suchikova, Anastasiia Lysak, Sergii Kovachov, Marina Konuhova, Yaroslav Zhydachevskyy, Anatoli I. Popov","doi":"10.1002/pssa.202400365","DOIUrl":"https://doi.org/10.1002/pssa.202400365","url":null,"abstract":"Herein, the impact of arsenolite oxide (As<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>) crystallites on the structural and optical properties of porous gallium arsenide (GaAs) is examined, focusing on understanding the potential passivation effect and its influence on material stability and safety. Utilizing a comprehensive set of analytical methods, including cathodoluminescence (CL) spectroscopy, Raman scattering spectroscopy, and X‐ray diffraction, the interaction between the GaAs substrate and arsenolite crystallites is characterized. The results indicate that the crystallites do not significantly alter the electronic and optical properties of the underlying GaAs, suggesting a possible passivating effect that could enhance device performance. However, concerns regarding arsenolite's environmental stability and toxicity prompt a cautious approach to its application. Herein, the need for further research into conditions conducive to natural oxide formation, exploration of alternative passivation strategies, and development of safe and stable oxide layers is underscored. Reproducible results are necessary to confirm the differences in CL signals between samples, as the current findings are based on single measurements.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"55 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141575339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lead‐free ceramic capacitors with high energy storage density are desired. Herein, the novel (1–x)(0.9Bi0.5Na0.5TiO3‐0.1SrTi0.85Zr0.15O3)‐xNa0.95Ca0.04Li0.01Nb0.96Zr0.04O3 [(1–x)(BNT‐STZ)‐xCZNNL, x = 0.1, 0.2, 0.3, 0.4 and 0.5] ceramics are prepared via citrate combustion technology and two‐step sintering method. The dense microstructures are observed and slim hysteresis loops are realized as addition of CZNNL. The enhanced recoverable energy storage density (Wre of 2.52 J cm−3) with high efficiency (η of 80%) is obtained in 0.6(BNT‐STZ)‐0.4CZNNL ceramic under a moderate electric field of 200 kV cm−1. Moreover, excellent thermal stability (Wre varies <1% and η varies <3.5%) at 20 to 100 °C) and excellent fatigue resistance are achieved for 0.6(BNT‐STZ)‐0.4CZNNL ceramic.
{"title":"Enhanced Energy Storage Properties of Bi0.5Na0.5TiO3‐Based Ceramics via Introducing Na0.95Ca0.04Li0.01Nb0.96Zr0.04O3","authors":"Hua Qiang, Lingyun Deng, Zunping Xu","doi":"10.1002/pssa.202400430","DOIUrl":"https://doi.org/10.1002/pssa.202400430","url":null,"abstract":"Lead‐free ceramic capacitors with high energy storage density are desired. Herein, the novel (1–<jats:italic>x</jats:italic>)(0.9Bi<jats:sub>0.5</jats:sub>Na<jats:sub>0.5</jats:sub>TiO<jats:sub>3</jats:sub>‐0.1SrTi<jats:sub>0.85</jats:sub>Zr<jats:sub>0.15</jats:sub>O<jats:sub>3</jats:sub>)‐<jats:italic>x</jats:italic>Na<jats:sub>0.95</jats:sub>Ca<jats:sub>0.04</jats:sub>Li<jats:sub>0.01</jats:sub>Nb<jats:sub>0.96</jats:sub>Zr<jats:sub>0.04</jats:sub>O<jats:sub>3</jats:sub> [(1–<jats:italic>x</jats:italic>)(BNT‐STZ)‐<jats:italic>x</jats:italic>CZNNL, <jats:italic>x</jats:italic> = 0.1, 0.2, 0.3, 0.4 and 0.5] ceramics are prepared via citrate combustion technology and two‐step sintering method. The dense microstructures are observed and slim hysteresis loops are realized as addition of CZNNL. The enhanced recoverable energy storage density (<jats:italic>W</jats:italic> <jats:sub>re</jats:sub> of 2.52 J cm<jats:sup>−3</jats:sup>) with high efficiency (<jats:italic>η</jats:italic> of 80%) is obtained in 0.6(BNT‐STZ)‐0.4CZNNL ceramic under a moderate electric field of 200 kV cm<jats:sup>−1</jats:sup>. Moreover, excellent thermal stability (<jats:italic>W</jats:italic> <jats:sub>re</jats:sub> varies <1% and <jats:italic>η</jats:italic> varies <3.5%) at 20 to 100 °C) and excellent fatigue resistance are achieved for 0.6(BNT‐STZ)‐0.4CZNNL ceramic.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"15 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141550982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kiruthika Sundaramoorthi, Uma Jagadesan, Balraj Baskaran, Siva Chidambaram
In recent years, the development of efficient and environmentally friendly synthesis methods for nanomaterials has gained significant attention in various research fields, particularly in gas‐sensing applications. Among these methods, ultrasonic synthesis stands out for its simplicity, cost‐effectiveness, and ecofriendly nature. Herein, a simple and green ultrasonic synthesis process is used to synthesize the SnO2 nanoparticles‐decorated rGO nanosheets. The obtained X‐ray diffraction reveals the tetragonal rutile‐type crystal structure. The transmission electron microscopy images reveal the decoration of SnO2 nanoparticles on the surfaces of the rGO sheets. SnO2 nanoparticles of size 4–8 nm are identified on the surfaces of the rGO sheets. Furthermore, the optical absorbance and photoluminescence spectra of the nanocomposites validate charge migrations occurring at the interface of SnO2 and the rGO sheets. Compared to the pristine SnO2 nanoparticles, the green ultrasonically synthesized SnO2 nanoparticles‐decorated SnO2/rGO nanocomposite exhibits better sensing performance against NO2 gas and shows selectivity for NO2 gas at 200 °C. The SnO2/rGO nanocomposite demonstrates high NO2 sensing with appealing sensing properties such as excellent responsiveness (67% at 400 °C), rapid reaction time (18 s), and short recovery time (25 s).
{"title":"Green Sonochemical Synthesis of rGO Nanosheets‐Decorated by SnO2 Nanoparticles for Nitrogen Gas‐Sensing Applications","authors":"Kiruthika Sundaramoorthi, Uma Jagadesan, Balraj Baskaran, Siva Chidambaram","doi":"10.1002/pssa.202400267","DOIUrl":"https://doi.org/10.1002/pssa.202400267","url":null,"abstract":"In recent years, the development of efficient and environmentally friendly synthesis methods for nanomaterials has gained significant attention in various research fields, particularly in gas‐sensing applications. Among these methods, ultrasonic synthesis stands out for its simplicity, cost‐effectiveness, and ecofriendly nature. Herein, a simple and green ultrasonic synthesis process is used to synthesize the SnO<jats:sub>2</jats:sub> nanoparticles‐decorated rGO nanosheets. The obtained X‐ray diffraction reveals the tetragonal rutile‐type crystal structure. The transmission electron microscopy images reveal the decoration of SnO<jats:sub>2</jats:sub> nanoparticles on the surfaces of the rGO sheets. SnO<jats:sub>2</jats:sub> nanoparticles of size 4–8 nm are identified on the surfaces of the rGO sheets. Furthermore, the optical absorbance and photoluminescence spectra of the nanocomposites validate charge migrations occurring at the interface of SnO<jats:sub>2</jats:sub> and the rGO sheets. Compared to the pristine SnO<jats:sub>2</jats:sub> nanoparticles, the green ultrasonically synthesized SnO<jats:sub>2</jats:sub> nanoparticles‐decorated SnO<jats:sub>2</jats:sub>/rGO nanocomposite exhibits better sensing performance against NO<jats:sub>2</jats:sub> gas and shows selectivity for NO<jats:sub>2</jats:sub> gas at 200 °C. The SnO<jats:sub>2</jats:sub>/rGO nanocomposite demonstrates high NO<jats:sub>2</jats:sub> sensing with appealing sensing properties such as excellent responsiveness (67% at 400 °C), rapid reaction time (18 s), and short recovery time (25 s).","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"13 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141550984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Herein, a simple strategy for fabricating amorphous Co2FeGe nanoflakes by tuning the milling time with mechanical alloying method to enhance the microwave absorption capabilities is presented. These alloys exhibit soft magnetic properties characterized by high saturation magnetization and low coercivity. The enhancement of polarization and resonance effects, leading to improved magnetic and dielectric loss, is attributed to the refinement of crystalline size and the substantial aspect ratio of flaky particles. The minimum reflection loss reaches −48.6 dB at 4.92 GHz with an effective absorption bandwidth of 2.88 GHz in the C‐band. Due to its high Curie temperature, Co2FeGe exhibits considerable potential for maintaining highly efficient microwave absorption capabilities under high‐temperature conditions, thereby providing a novel perspective and technical means for the development of new high‐temperature‐resistant, high‐performance microwave‐absorbing materials. This is expected to play a significant role in future high‐temperature electronic countermeasure systems.
{"title":"Microstructure‐Tuned Amorphous Co2FeGe Nanoflakes for Enhanced Microwave Absorption Via Mechanical Alloying","authors":"Yifeng Zhang, Yu Gao, Zekun Zhang, Gaohe Zhang, Baojuan Kang, Rongrong Jia, Junyi Ge, Shixun Cao, Jincang Zhang, Zhenjie Feng","doi":"10.1002/pssa.202400317","DOIUrl":"https://doi.org/10.1002/pssa.202400317","url":null,"abstract":"Herein, a simple strategy for fabricating amorphous Co<jats:sub>2</jats:sub>FeGe nanoflakes by tuning the milling time with mechanical alloying method to enhance the microwave absorption capabilities is presented. These alloys exhibit soft magnetic properties characterized by high saturation magnetization and low coercivity. The enhancement of polarization and resonance effects, leading to improved magnetic and dielectric loss, is attributed to the refinement of crystalline size and the substantial aspect ratio of flaky particles. The minimum reflection loss reaches −48.6 dB at 4.92 GHz with an effective absorption bandwidth of 2.88 GHz in the C‐band. Due to its high Curie temperature, Co<jats:sub>2</jats:sub>FeGe exhibits considerable potential for maintaining highly efficient microwave absorption capabilities under high‐temperature conditions, thereby providing a novel perspective and technical means for the development of new high‐temperature‐resistant, high‐performance microwave‐absorbing materials. This is expected to play a significant role in future high‐temperature electronic countermeasure systems.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"107 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141550983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：