Pub Date : 2014-10-01DOI: 10.1109/APEIE.2014.7040770
T. V. Preobrazenskay
An approach to the systematization of standards information technology (IT) processes based on the software life cycle.
一种基于软件生命周期的标准化信息技术(IT)过程的系统化方法。
{"title":"About systematization standards in information technology","authors":"T. V. Preobrazenskay","doi":"10.1109/APEIE.2014.7040770","DOIUrl":"https://doi.org/10.1109/APEIE.2014.7040770","url":null,"abstract":"An approach to the systematization of standards information technology (IT) processes based on the software life cycle.","PeriodicalId":202524,"journal":{"name":"2014 12th International Conference on Actual Problems of Electronics Instrument Engineering (APEIE)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131043919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/APEIE.2014.7040721
M. G. Noppe
The natural linewidth in DFB lasers is calculated on the basis of a new formula for the line shape which has been derived in the process of applying effective nonlinear photorefractivity which is assumed. Corrugation, phase, and amplitude components of the natural linewidth are taken into account. We have defined and found numerical values of laser parameters describing the natural linewidth of DFB lasers by solving an inverse problem, and then have simulated 12 experimental measurements.
{"title":"On natural linewidth of distributed feedback lasers; simulation of experiments","authors":"M. G. Noppe","doi":"10.1109/APEIE.2014.7040721","DOIUrl":"https://doi.org/10.1109/APEIE.2014.7040721","url":null,"abstract":"The natural linewidth in DFB lasers is calculated on the basis of a new formula for the line shape which has been derived in the process of applying effective nonlinear photorefractivity which is assumed. Corrugation, phase, and amplitude components of the natural linewidth are taken into account. We have defined and found numerical values of laser parameters describing the natural linewidth of DFB lasers by solving an inverse problem, and then have simulated 12 experimental measurements.","PeriodicalId":202524,"journal":{"name":"2014 12th International Conference on Actual Problems of Electronics Instrument Engineering (APEIE)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131200641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/APEIE.2014.7040923
M. G. Rubanovich, V. Razinkin, V. Khrustalev, G. S. Nikolaev, A. A. Stolyarenko, K. J. Aubakirov
In operation results of research and development of the broadband microwave attenuator providing in case of use of forced air cooling power carrying input power to 1 kW are provided. It's shown that its implementation on the basis of the microstrip technology provides a uniform amplitude-frequency characteristic and low value of VSWR in broad band of frequencies.
{"title":"Broadband microwave attenuators of the high level power","authors":"M. G. Rubanovich, V. Razinkin, V. Khrustalev, G. S. Nikolaev, A. A. Stolyarenko, K. J. Aubakirov","doi":"10.1109/APEIE.2014.7040923","DOIUrl":"https://doi.org/10.1109/APEIE.2014.7040923","url":null,"abstract":"In operation results of research and development of the broadband microwave attenuator providing in case of use of forced air cooling power carrying input power to 1 kW are provided. It's shown that its implementation on the basis of the microstrip technology provides a uniform amplitude-frequency characteristic and low value of VSWR in broad band of frequencies.","PeriodicalId":202524,"journal":{"name":"2014 12th International Conference on Actual Problems of Electronics Instrument Engineering (APEIE)","volume":"376 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126719815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/APEIE.2014.7040924
D. I. Volkhin, G. Devyatkov
Criteria which enable to define the structure of matrix of analog passive all-pass network for the synthesis of the matching device with prescribed phase response are determined in this paper.
本文确定了用于合成具有规定相位响应的匹配器件的模拟无源全通网络矩阵结构的确定准则。
{"title":"Criteria of the matrix of analog passive all-pass network","authors":"D. I. Volkhin, G. Devyatkov","doi":"10.1109/APEIE.2014.7040924","DOIUrl":"https://doi.org/10.1109/APEIE.2014.7040924","url":null,"abstract":"Criteria which enable to define the structure of matrix of analog passive all-pass network for the synthesis of the matching device with prescribed phase response are determined in this paper.","PeriodicalId":202524,"journal":{"name":"2014 12th International Conference on Actual Problems of Electronics Instrument Engineering (APEIE)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128193106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/APEIE.2014.7040892
Y. Greenberg, A. Sultanov, E. Il'ichev
We suggest a new method for microwave diagnostics of nanomechanical resonators. The system under consideration is a microwave coplanar line (MWCL), interacting through a capacitive load with nanomehanichal resonator (NAMR). The input is a superposition of two signals with close frequencies, one of which coincides with the fundamental frequency of the MWCL. Thus NAMR is excited by a difference frequency, which leads to a modulation of the output signal at this frequency. The modulation amplitudes of the output signal has the characteristic peaks at the resonant frequency of the NAMR, which allows the determination of the position of the NAMR resonance and its quality factor. The paper presents a theoretical calculation of the modulation amplitudes. It is shown that their frequency dependence has a characteristic Lorentzian structure with the position of the peak and the width being determined by NAMR resonance characteristics.
{"title":"Microwave characterization of nanomechanical resonator","authors":"Y. Greenberg, A. Sultanov, E. Il'ichev","doi":"10.1109/APEIE.2014.7040892","DOIUrl":"https://doi.org/10.1109/APEIE.2014.7040892","url":null,"abstract":"We suggest a new method for microwave diagnostics of nanomechanical resonators. The system under consideration is a microwave coplanar line (MWCL), interacting through a capacitive load with nanomehanichal resonator (NAMR). The input is a superposition of two signals with close frequencies, one of which coincides with the fundamental frequency of the MWCL. Thus NAMR is excited by a difference frequency, which leads to a modulation of the output signal at this frequency. The modulation amplitudes of the output signal has the characteristic peaks at the resonant frequency of the NAMR, which allows the determination of the position of the NAMR resonance and its quality factor. The paper presents a theoretical calculation of the modulation amplitudes. It is shown that their frequency dependence has a characteristic Lorentzian structure with the position of the peak and the width being determined by NAMR resonance characteristics.","PeriodicalId":202524,"journal":{"name":"2014 12th International Conference on Actual Problems of Electronics Instrument Engineering (APEIE)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116895652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/APEIE.2014.7040839
V. Videkov
This paper presents the results from the research and development of the construction and technology of a 3 dimensional surface mounting. The main idea is to use surface mounting processes for assembly of high density modules. In order to do that, surface mounting on two or more levels is carried out. The difference from the stacked-die and other similar processes is that soldering takes place simultaneously on all levels. There is a predefined displacement aiming to check the stability of the process, and thus the degree of alignment is verified. It is shown that even when small technological error is introduced, process is realizable.
{"title":"3D surface mounting","authors":"V. Videkov","doi":"10.1109/APEIE.2014.7040839","DOIUrl":"https://doi.org/10.1109/APEIE.2014.7040839","url":null,"abstract":"This paper presents the results from the research and development of the construction and technology of a 3 dimensional surface mounting. The main idea is to use surface mounting processes for assembly of high density modules. In order to do that, surface mounting on two or more levels is carried out. The difference from the stacked-die and other similar processes is that soldering takes place simultaneously on all levels. There is a predefined displacement aiming to check the stability of the process, and thus the degree of alignment is verified. It is shown that even when small technological error is introduced, process is realizable.","PeriodicalId":202524,"journal":{"name":"2014 12th International Conference on Actual Problems of Electronics Instrument Engineering (APEIE)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114756032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/APEIE.2014.7040903
E. Krasnopevtsev
The calculation method of average values of energy and degrees of impulse and coordinate projections of ideal classical gas particle is proposed for Hamiltonian with power argument dependences. The statistical integral of canonical distribution is used.
{"title":"Thermal energy distribution on degrees of freedom","authors":"E. Krasnopevtsev","doi":"10.1109/APEIE.2014.7040903","DOIUrl":"https://doi.org/10.1109/APEIE.2014.7040903","url":null,"abstract":"The calculation method of average values of energy and degrees of impulse and coordinate projections of ideal classical gas particle is proposed for Hamiltonian with power argument dependences. The statistical integral of canonical distribution is used.","PeriodicalId":202524,"journal":{"name":"2014 12th International Conference on Actual Problems of Electronics Instrument Engineering (APEIE)","volume":"2014 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114768617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/APEIE.2014.7040724
M. G. Noppe
Formulas for natural linewidth in Fabry-Perot semiconductor lasers in dimensional and non-dimensional forms are derived on the basis of the formula for the line shape which has been deduced when applying nonlinear photorefractivity. Medium, phase, and amplitude components of the natural linewidth are taken into account. We define characteristic parameters describing the natural linewidth of Fabry-Perot semiconductor lasers, find their numerical values by solving an inverse problem, and then simulate all experimental measurements represented in the literature we have available; then non-dimensional natural linewidth is simulated. This development brings the subject of understanding physics and capability of calculating laser parameters, as well as simulating the natural linewidth of semiconductor lasers, to a qualitatively new level.
{"title":"On formula for natural linewidth in Fabry-Perot lasers; simulation of experiments","authors":"M. G. Noppe","doi":"10.1109/APEIE.2014.7040724","DOIUrl":"https://doi.org/10.1109/APEIE.2014.7040724","url":null,"abstract":"Formulas for natural linewidth in Fabry-Perot semiconductor lasers in dimensional and non-dimensional forms are derived on the basis of the formula for the line shape which has been deduced when applying nonlinear photorefractivity. Medium, phase, and amplitude components of the natural linewidth are taken into account. We define characteristic parameters describing the natural linewidth of Fabry-Perot semiconductor lasers, find their numerical values by solving an inverse problem, and then simulate all experimental measurements represented in the literature we have available; then non-dimensional natural linewidth is simulated. This development brings the subject of understanding physics and capability of calculating laser parameters, as well as simulating the natural linewidth of semiconductor lasers, to a qualitatively new level.","PeriodicalId":202524,"journal":{"name":"2014 12th International Conference on Actual Problems of Electronics Instrument Engineering (APEIE)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114918119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/APEIE.2014.7040925
V. Gridchin, A. S. Cherkaev, E. G. Sayanova
Theory of n-type silicon longitudinal and transverse piezoresistance coefficients in the case of uniaxial pre-strain state along [100] crystallographic axis is presented. Numerical calculations for various impurity concentrations in a range of 1·1016 - 1·1020 cm-3 are performed. It has been shown that compressive pre-strain state of the piezoresistor can increase the longitudinal piezoresistance coefficient on 60 %.
{"title":"The influence of n-type silicon piezoresistors pre-strain state on their piezoresistance","authors":"V. Gridchin, A. S. Cherkaev, E. G. Sayanova","doi":"10.1109/APEIE.2014.7040925","DOIUrl":"https://doi.org/10.1109/APEIE.2014.7040925","url":null,"abstract":"Theory of n-type silicon longitudinal and transverse piezoresistance coefficients in the case of uniaxial pre-strain state along [100] crystallographic axis is presented. Numerical calculations for various impurity concentrations in a range of 1·10<sup>16</sup> - 1·10<sup>20</sup> cm<sup>-3</sup> are performed. It has been shown that compressive pre-strain state of the piezoresistor can increase the longitudinal piezoresistance coefficient on 60 %.","PeriodicalId":202524,"journal":{"name":"2014 12th International Conference on Actual Problems of Electronics Instrument Engineering (APEIE)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121600456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/APEIE.2014.7040755
Y. Soloveichik, M. Persova, P. Domnikov, D. Vagin
A new method for calculating the three-dimensional time-harmonic electromagnetic fields, allowing quick and accurate solution of the relevant problems, is presented. The method is based on the use of finite element approximations, the technology of field separation of a horizontally layered medium, and special mathematical statements for calculating the normal field. The proposed mathematical apparatus is described, and the results of computational experiments are presented.
{"title":"Method for calculating the three-dimensional time-harmonic electromagnetic fields in marine electrical prospecting","authors":"Y. Soloveichik, M. Persova, P. Domnikov, D. Vagin","doi":"10.1109/APEIE.2014.7040755","DOIUrl":"https://doi.org/10.1109/APEIE.2014.7040755","url":null,"abstract":"A new method for calculating the three-dimensional time-harmonic electromagnetic fields, allowing quick and accurate solution of the relevant problems, is presented. The method is based on the use of finite element approximations, the technology of field separation of a horizontally layered medium, and special mathematical statements for calculating the normal field. The proposed mathematical apparatus is described, and the results of computational experiments are presented.","PeriodicalId":202524,"journal":{"name":"2014 12th International Conference on Actual Problems of Electronics Instrument Engineering (APEIE)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121645485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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