Yi Wang, Zhen-Ze Li, Hong-Wei Zhou, Rui-Fan Li, Jia-Tai Huang, Zhu Lin, Qi-Dai Chen, Lei Wang, Hong-Bo Sun
It has been established that assembling chiral nanostructures using a circularly polarized laser is formidable due to their symmetry mismatch. Traditionally, complex light fields or chiral precursors are considered prerequisites for optical chiral self-assembly. Herein, an unexpected seed symmetry-breaking (SSB) effect is reported, through which not only are chiral structures readily assembled by circularly polarized light in a controllable manner, but the physical mechanism of chiral assembly reported so far is also clarified. The SSB effect refers to a phenomenon of symmetry reduction in photo-generated structures—the seed for ensuing structure growth—which inevitably leads to a chiral near field and the formation of resultant chiral structures. As proof of concept, the near fields as well as the process of chiral structure evolution are recorded using a low-melting-point film. In this particular case, laser-induced nanoscale Rayleigh–Taylor instability (nano-RTI) is responsible for the initial SSB. Consequently, a simple and rapid chiral structure self-assembly method is developed, and a programmable array with a 15% peak in the circular differential scattering spectrum (CDS) is realized.
{"title":"Optical Self-Assembly of Chiral Nanostructures by a Seed Symmetry-Breaking Effect","authors":"Yi Wang, Zhen-Ze Li, Hong-Wei Zhou, Rui-Fan Li, Jia-Tai Huang, Zhu Lin, Qi-Dai Chen, Lei Wang, Hong-Bo Sun","doi":"10.1002/lpor.202402108","DOIUrl":"https://doi.org/10.1002/lpor.202402108","url":null,"abstract":"It has been established that assembling chiral nanostructures using a circularly polarized laser is formidable due to their symmetry mismatch. Traditionally, complex light fields or chiral precursors are considered prerequisites for optical chiral self-assembly. Herein, an unexpected seed symmetry-breaking (SSB) effect is reported, through which not only are chiral structures readily assembled by circularly polarized light in a controllable manner, but the physical mechanism of chiral assembly reported so far is also clarified. The SSB effect refers to a phenomenon of symmetry reduction in photo-generated structures—the seed for ensuing structure growth—which inevitably leads to a chiral near field and the formation of resultant chiral structures. As proof of concept, the near fields as well as the process of chiral structure evolution are recorded using a low-melting-point film. In this particular case, laser-induced nanoscale Rayleigh–Taylor instability (nano-RTI) is responsible for the initial SSB. Consequently, a simple and rapid chiral structure self-assembly method is developed, and a programmable array with a 15% peak in the circular differential scattering spectrum (CDS) is realized.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":"35 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143463191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Laser‐based visible light communication (VLC) is emerging as a crucial technology for future applications like the Internet of Things and artificial intelligence. However, the data transmission rate is limited by the modulation bandwidth of visible laser diodes (LDs). This paper presents the design and fabrication of blue GaN‐based short‐cavity (300 µm/500 µm) LDs with InGaN quantum barrier (QB) and a narrow ridge width of 2 µm for high‐speed VLC systems. Theoretical analyses of the band structure and carrier distribution, along with experimental results, reveal significant improvements in electro‐optical performance and frequency response of the demonstrated blue LDs with InGaN QB. A high slope efficiency of 1.85 W A−1, a wall‐plug efficiency of 29%, and an intrinsic 3 dB bandwidth exceeding 8 GHz are achieved. By using the high‐speed blue LD as a transmitter, the VLC system achieves a record data rate of 36.5 Gbps. The system shows a larger operation window for high speed and better temperature adaptability, marking a substantial advancement for high‐speed VLC links.
{"title":"High‐Speed Blue Laser Diodes with InGaN Quantum Barrier for Beyond 36 Gbps Visible Light Communications","authors":"Haolin Jia, Junhui Hu, Zengyi Xu, Zhenqian Gu, Zhen Yang, Zengxin Li, Yingjun Zhou, Jianyang Shi, Ziwei Li, Junwen Zhang, Nan Chi, Chao Shen","doi":"10.1002/lpor.202401751","DOIUrl":"https://doi.org/10.1002/lpor.202401751","url":null,"abstract":"Laser‐based visible light communication (VLC) is emerging as a crucial technology for future applications like the Internet of Things and artificial intelligence. However, the data transmission rate is limited by the modulation bandwidth of visible laser diodes (LDs). This paper presents the design and fabrication of blue GaN‐based short‐cavity (300 µm/500 µm) LDs with InGaN quantum barrier (QB) and a narrow ridge width of 2 µm for high‐speed VLC systems. Theoretical analyses of the band structure and carrier distribution, along with experimental results, reveal significant improvements in electro‐optical performance and frequency response of the demonstrated blue LDs with InGaN QB. A high slope efficiency of 1.85 W A<jats:sup>−1</jats:sup>, a wall‐plug efficiency of 29%, and an intrinsic 3 dB bandwidth exceeding 8 GHz are achieved. By using the high‐speed blue LD as a transmitter, the VLC system achieves a record data rate of 36.5 Gbps. The system shows a larger operation window for high speed and better temperature adaptability, marking a substantial advancement for high‐speed VLC links.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":"1 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143451500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hemeng Xue, Mingtao Shang, Ze Zhang, Hongfei Yu, Jinchao Liang, Meiling Guan, Chengming Sun, Huahua Wang, Shufeng Wang, Zhengyu Ye, Feng Gao, Lu Gao
Improving the Sampling Limit of DISs
A groundbreaking approach has been developed to enhance the pixel resolution of digital image sensors (DISs) by measuring the intra-pixel quantum efficiency distribution with a dynamic optical steady beam. This innovative method enables the reconstruction of hyper-sampling images with a resolution several times higher than the original sensor resolution by capturing multiple frames of the same scene during object or camera movement. It offers a novel perspective on amplifying image sensor resolution not through manufacturing enhancements, but by employing existing sensors in a different way. For detailed information, see article 2401306 by Ze Zhang, and co-workers.