Haotong Qi, Jianyang Hu, Chang Li, Xuyao Zhang, Chen Chen, Danlin Cao, Jie Lin, Yiqun Wang, Peng Jin
Optical computing has been proven to have the ability to process information with ultra-high speed. Here, an all-optical feature extraction system via sparse representation (AFE-SR) is introduced. The AFE-SR, which is achieved by multiple diffractive optical elements (DOEs), can realize the recognition of generated physical fields with the speed of light. The sparse representation simplifies the target and improves the recognition accuracy. With the mathematical analysis principle of sparse optical features extraction and optical integration, the identification accuracy of the generation of physical fields is 100% in 2100 frames of the experimental videos. The application field of optical computing systems is extended to state recognition.
{"title":"All-Optical Physical Field Recognition Via Sparse Feature Extraction","authors":"Haotong Qi, Jianyang Hu, Chang Li, Xuyao Zhang, Chen Chen, Danlin Cao, Jie Lin, Yiqun Wang, Peng Jin","doi":"10.1002/lpor.202400376","DOIUrl":"https://doi.org/10.1002/lpor.202400376","url":null,"abstract":"Optical computing has been proven to have the ability to process information with ultra-high speed. Here, an all-optical feature extraction system via sparse representation (AFE-SR) is introduced. The AFE-SR, which is achieved by multiple diffractive optical elements (DOEs), can realize the recognition of generated physical fields with the speed of light. The sparse representation simplifies the target and improves the recognition accuracy. With the mathematical analysis principle of sparse optical features extraction and optical integration, the identification accuracy of the generation of physical fields is 100% in 2100 frames of the experimental videos. The application field of optical computing systems is extended to state recognition.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":null,"pages":null},"PeriodicalIF":11.0,"publicationDate":"2024-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141441518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this study, a detector is developed using deuterated L-alanine doped triglycine sulfate (DLATGS) crystals capable of detecting circularly polarized light (CPL) and various polarization states. As a primary pyroelectric detection crystal, DLATGS has exhibited notable optical responses to both linearly and circularly polarized light during the tests, demonstrating a favorable polarization ratio of 3.86 and an anisotropic factor
Jianrong Lin, Wenhui Fang, Haixing Tan, Haojun Zhang, Jingfei Dai, Ziqing Liu, Si Liu, Jianwen Chen, Runfeng Wu, Hua Xu, Kar Wei Ng, Peng Xiao, Baiquan Liu
Active materials play a crucial role in the performance of phototransistors. However, the discovery of a novel and versatile active material is a big challenge. For the first time, phototransistors with ultrathin niobium‐doped indium oxide (InNbO) active layer are fabricated. The InNbO phototransistors without additional light‐absorbing layers exhibit the performance with a high average mobility of 22.86 cm2 V−1s−1, a turn‐on voltage of −0.75 V, a low sub threshold swing of 0.18 V/decade, and a high on/off current ratio of 5.74 × 108. Detailed studies show that Nb is the key to suppress the free carrier generation due to the strong bonding strength of Nb─O. In addition, the InNbO phototransistors exhibit a very broad spectral responsivity with a photocurrent of 4.72 × 10−4 A, a photosensitivity of 1.69 × 108, and a high detectivity of 3.33 × 1013 Jones under violet (405 nm) light illumination, which is significantly higher than that of the IGZO phototransistors. Furthermore, an active‐matrix quantum‐dot light‐emitting diode pixel circuit based on InNbO phototransistors is demonstrated. The findings not only indicate that InNbO is a new active material for phototransistors, but also suggest that InNbO‐based phototransistors have a great potential for the next‐generation interactive display technology.
{"title":"Ultrathin Niobium‐Doped Indium Oxide Active Layer Enables High‐Performance Phototransistors for Driving Quantum‐Dot Light‐Emitting Diodes","authors":"Jianrong Lin, Wenhui Fang, Haixing Tan, Haojun Zhang, Jingfei Dai, Ziqing Liu, Si Liu, Jianwen Chen, Runfeng Wu, Hua Xu, Kar Wei Ng, Peng Xiao, Baiquan Liu","doi":"10.1002/lpor.202400276","DOIUrl":"https://doi.org/10.1002/lpor.202400276","url":null,"abstract":"Active materials play a crucial role in the performance of phototransistors. However, the discovery of a novel and versatile active material is a big challenge. For the first time, phototransistors with ultrathin niobium‐doped indium oxide (InNbO) active layer are fabricated. The InNbO phototransistors without additional light‐absorbing layers exhibit the performance with a high average mobility of 22.86 cm<jats:sup>2</jats:sup> V<jats:sup>−1</jats:sup>s<jats:sup>−1</jats:sup>, a turn‐on voltage of −0.75 V, a low sub threshold swing of 0.18 V/decade, and a high on/off current ratio of 5.74 × 10<jats:sup>8</jats:sup>. Detailed studies show that Nb is the key to suppress the free carrier generation due to the strong bonding strength of Nb─O. In addition, the InNbO phototransistors exhibit a very broad spectral responsivity with a photocurrent of 4.72 × 10<jats:sup>−4</jats:sup> A, a photosensitivity of 1.69 × 10<jats:sup>8</jats:sup>, and a high detectivity of 3.33 × 10<jats:sup>13</jats:sup> Jones under violet (405 nm) light illumination, which is significantly higher than that of the IGZO phototransistors. Furthermore, an active‐matrix quantum‐dot light‐emitting diode pixel circuit based on InNbO phototransistors is demonstrated. The findings not only indicate that InNbO is a new active material for phototransistors, but also suggest that InNbO‐based phototransistors have a great potential for the next‐generation interactive display technology.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":null,"pages":null},"PeriodicalIF":11.0,"publicationDate":"2024-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141448157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
3D nanolithography based on two-photon polymerization (TPP) allows for the high-precision fabrication of nearly arbitrary 3D micro/nanostructures, finding extensive applications in areas such as micro-optics, micro-mechanics, and biomedicine. However, the large size, complexity of optical systems, and high costs have significantly constrained the widespread adoption of 3D nanolithography technology in both scientific research and industry. In this study, a metasurface is introduced, for the first time, into 3D nanolithography resulting in the construction of a miniaturized and simplified TPP system that achieved efficient multi-focus parallel processing with high uniformity. A microlens array is fabricated, showcasing the system's application capacity to generate an array of devices with high consistency and quality. It is believed that the utilization of metasurface devices will provide a novel TPP operating platform, enabling richer and more flexible printing functionalities while maintaining system miniaturization and low cost.
{"title":"3D Nanolithography via Holographic Multi-Focus Metalens","authors":"Xinger Wang, Xuhao Fan, Yuncheng Liu, Ke Xu, Yining Zhou, Zexu Zhang, Fayu Chen, Xuan Yu, Leimin Deng, Hui Gao, Wei Xiong","doi":"10.1002/lpor.202400181","DOIUrl":"https://doi.org/10.1002/lpor.202400181","url":null,"abstract":"3D nanolithography based on two-photon polymerization (TPP) allows for the high-precision fabrication of nearly arbitrary 3D micro/nanostructures, finding extensive applications in areas such as micro-optics, micro-mechanics, and biomedicine. However, the large size, complexity of optical systems, and high costs have significantly constrained the widespread adoption of 3D nanolithography technology in both scientific research and industry. In this study, a metasurface is introduced, for the first time, into 3D nanolithography resulting in the construction of a miniaturized and simplified TPP system that achieved efficient multi-focus parallel processing with high uniformity. A microlens array is fabricated, showcasing the system's application capacity to generate an array of devices with high consistency and quality. It is believed that the utilization of metasurface devices will provide a novel TPP operating platform, enabling richer and more flexible printing functionalities while maintaining system miniaturization and low cost.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":null,"pages":null},"PeriodicalIF":11.0,"publicationDate":"2024-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141441510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thermal quenching of luminescence materials poses a major obstacle to the technological application of luminescence thermometry. It still remains challenging to attain thermally enhanced light emissions, especially in the second near-infrared window (NIR-II). Herein, an anomalous thermal dependence of NIR-II luminescence in the negative thermal expansion (NTE) Sc2Mo3O12:Er3+/Ho3+ nanocrystals is reported. Mechanistic investigations affirm that Ho3+ ion can work as an energy reservoir and back-transfer to Er3+ ion with the assistance of lattice phonon at elevated temperatures. Moreover, the Ho3+-mediated energy feedback is strengthened by the thermal contraction between dopant ions, thereby enabling a remarkable thermal enhancement of NIR-II emission over 11-fold. The opposite thermal response of Er3+ and Ho3+ emissions is harnessed for NIR-II ratiometric thermometry, registering exceptional performance in a high-temperature regime (Sr = 1.71% K−1, δT = 0.2 K at 513 K). These findings may inspire new insights for addressing the thermal quenching of NIR-II luminescence, which also raises exciting opportunities for flexible thermometry in complex settings.
{"title":"Thermal Enhancement of Er3+ NIR-II Luminescence by Ho3+-Mediated Energy-Trapping in Negative Thermal Expansion Nanocrystals","authors":"Jiaoyin Zhao, Jiwen Chang, Nan Wang, Peihang Zhao, Mengyuan Zhu, Ying Liu, Dongxu Guo, Yu Wang, Panlai Li, Zhijun Wang, Hao Suo","doi":"10.1002/lpor.202400151","DOIUrl":"https://doi.org/10.1002/lpor.202400151","url":null,"abstract":"Thermal quenching of luminescence materials poses a major obstacle to the technological application of luminescence thermometry. It still remains challenging to attain thermally enhanced light emissions, especially in the second near-infrared window (NIR-II). Herein, an anomalous thermal dependence of NIR-II luminescence in the negative thermal expansion (NTE) Sc<sub>2</sub>Mo<sub>3</sub>O<sub>12</sub>:Er<sup>3+</sup>/Ho<sup>3+</sup> nanocrystals is reported. Mechanistic investigations affirm that Ho<sup>3+</sup> ion can work as an energy reservoir and back-transfer to Er<sup>3+</sup> ion with the assistance of lattice phonon at elevated temperatures. Moreover, the Ho<sup>3+</sup>-mediated energy feedback is strengthened by the thermal contraction between dopant ions, thereby enabling a remarkable thermal enhancement of NIR-II emission over 11-fold. The opposite thermal response of Er<sup>3+</sup> and Ho<sup>3+</sup> emissions is harnessed for NIR-II ratiometric thermometry, registering exceptional performance in a high-temperature regime (<i>S<sub>r</sub></i> = 1.71% K<sup>−1</sup>, <i>δT</i> = 0.2 K at 513 K). These findings may inspire new insights for addressing the thermal quenching of NIR-II luminescence, which also raises exciting opportunities for flexible thermometry in complex settings.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":null,"pages":null},"PeriodicalIF":11.0,"publicationDate":"2024-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141425192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jin Chen, Shao Xin Huang, Ka Fai Chan, Geng-Bo Wu, Chi Hou Chan
Real-time dynamic super-resolution focusing technology is crucial for various imaging applications. However, the diffraction limit significantly impedes the achievement of real-time dynamic super-resolution imaging. Prior studies within this domain, such as super-resolution fluorescence imaging and structured illumination microscopy, heavily rely on fluorescent labels and intricate algorithms. This article proposes a novel approach to achieving real-time dynamic super-resolution imaging at microwave frequency by integrating the Mikaelian lens derived from conformal transformation optics with the space-time-coding metasurface antenna. Real-time dynamic super-resolution focusing with a resolution ranging from 0.3λ to 0.4λ is demonstrated at the periphery of the Mikaelian lens with a numerical aperture (NA) of 0.54. The proposed hybrid lens exhibits the capacity to discern features separated by about one-third of a wavelength with high precision. The work offers a universal solution for achieving dynamic real-time super-resolution imaging electrically, which can be extended to terahertz waves, visible light, and other wave fields, such as acoustic and flexural waves.
{"title":"A Hybrid Lens to Realize Electrical Real-Time Super-Resolution Imaging","authors":"Jin Chen, Shao Xin Huang, Ka Fai Chan, Geng-Bo Wu, Chi Hou Chan","doi":"10.1002/lpor.202400263","DOIUrl":"https://doi.org/10.1002/lpor.202400263","url":null,"abstract":"Real-time dynamic super-resolution focusing technology is crucial for various imaging applications. However, the diffraction limit significantly impedes the achievement of real-time dynamic super-resolution imaging. Prior studies within this domain, such as super-resolution fluorescence imaging and structured illumination microscopy, heavily rely on fluorescent labels and intricate algorithms. This article proposes a novel approach to achieving real-time dynamic super-resolution imaging at microwave frequency by integrating the Mikaelian lens derived from conformal transformation optics with the space-time-coding metasurface antenna. Real-time dynamic super-resolution focusing with a resolution ranging from 0.3λ to 0.4λ is demonstrated at the periphery of the Mikaelian lens with a numerical aperture (NA) of 0.54. The proposed hybrid lens exhibits the capacity to discern features separated by about one-third of a wavelength with high precision. The work offers a universal solution for achieving dynamic real-time super-resolution imaging electrically, which can be extended to terahertz waves, visible light, and other wave fields, such as acoustic and flexural waves.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":null,"pages":null},"PeriodicalIF":11.0,"publicationDate":"2024-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141425201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Light polarization control is a target in photonics, and this paper provides a comprehensive review of research from various groups on the silicon-on-insulator (SOI) platform. It draws comparisons between devices such as polarization splitters (PS), polarizers, and polarization splitters/rotators (PSR). These devices are fabricated using various technologies, including silicon nanowires, ridge waveguides, hybrid plasmonic waveguides, and subwavelength grating (SWG) waveguides. A detailed review of polarizers used as cleanup filters in splitters is initiated. Subsequently, various polarization splitters utilizing asymmetric directional couplers (ADCs), which typically exhibiting low extinction ratios (ERs), are delved. To enhance ERs, a detailed comparison of methods outlined in the literature is provided. One notable method includes integrating on-chip polarizers at both ports to eliminate unwanted light fractions and achieve exceptionally high ERs. Furthermore, SWG-based polarizers and splitters commonly face issues with Bragg reflections that can affect other photonic devices and lasers and ways to minimize unwanted polarization back reflections in SWG-designed polarization control devices are examined. Finally, emerging applications in mid-infrared (MIR) sensing are explored, highlighting the necessity of polarization rotators for on-chip transverse electric (TE) operation, since quantum cascade lasers, the primary sources in this range, emitting radiation in the (TM) mode.
{"title":"Recent Progress in Light Polarization Control Schemes for Silicon Integrated Photonics","authors":"Humaira Zafar, Mauro F. Pereira","doi":"10.1002/lpor.202301025","DOIUrl":"https://doi.org/10.1002/lpor.202301025","url":null,"abstract":"Light polarization control is a target in photonics, and this paper provides a comprehensive review of research from various groups on the silicon-on-insulator (SOI) platform. It draws comparisons between devices such as polarization splitters (PS), polarizers, and polarization splitters/rotators (PSR). These devices are fabricated using various technologies, including silicon nanowires, ridge waveguides, hybrid plasmonic waveguides, and subwavelength grating (SWG) waveguides. A detailed review of polarizers used as cleanup filters in splitters is initiated. Subsequently, various polarization splitters utilizing asymmetric directional couplers (ADCs), which typically exhibiting low extinction ratios (ERs), are delved. To enhance ERs, a detailed comparison of methods outlined in the literature is provided. One notable method includes integrating on-chip polarizers at both ports to eliminate unwanted light fractions and achieve exceptionally high ERs. Furthermore, SWG-based polarizers and splitters commonly face issues with Bragg reflections that can affect other photonic devices and lasers and ways to minimize unwanted polarization back reflections in SWG-designed polarization control devices are examined. Finally, emerging applications in mid-infrared (MIR) sensing are explored, highlighting the necessity of polarization rotators for on-chip transverse electric (TE) operation, since quantum cascade lasers, the primary sources in this range, emitting radiation in the (TM) mode.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":null,"pages":null},"PeriodicalIF":11.0,"publicationDate":"2024-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141425195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ruichen Li, Min Huang, Yijun Zou, Bin Zheng, Caofei Luo, Lian Shen, Hui Jin, Hongsheng Chen
Hiding an isolated object in free space using a transmissive invisibility cloak has become a significant research area, propelled by advancements in metamaterials and transformation optics over the past decade. Despite the availability of various simplified methods for implementing transmissive cloaks, issues such as impedance mismatches and narrow working bandwidths often arise, posing challenges. Achieving a broadband transmissive cloak in free space has proven to be particularly arduous. This study presents a near-perfect one-directional broadband transmissive cloak constructed from multilayer metasurfaces of arbitrary shapes, showcasing superior performance across a broadband frequency range. The phase distribution of the metasurfaces and the efficacy of the transmissive cloak are assessed using the generalized Snell's law. An experimental near-perfect broadband transmissive cloak is successfully demonstrated to operate within the frequency range of 8.5 to 11.2 GHz. This study contributes to reducing the density and mass of cloaks, thereby facilitating the expansion of cloaking capabilities in various directions and across different frequency bands.
{"title":"Experimental Realization of a One-Directional Broadband Transmissive Cloak in Microwaves","authors":"Ruichen Li, Min Huang, Yijun Zou, Bin Zheng, Caofei Luo, Lian Shen, Hui Jin, Hongsheng Chen","doi":"10.1002/lpor.202400611","DOIUrl":"https://doi.org/10.1002/lpor.202400611","url":null,"abstract":"Hiding an isolated object in free space using a transmissive invisibility cloak has become a significant research area, propelled by advancements in metamaterials and transformation optics over the past decade. Despite the availability of various simplified methods for implementing transmissive cloaks, issues such as impedance mismatches and narrow working bandwidths often arise, posing challenges. Achieving a broadband transmissive cloak in free space has proven to be particularly arduous. This study presents a near-perfect one-directional broadband transmissive cloak constructed from multilayer metasurfaces of arbitrary shapes, showcasing superior performance across a broadband frequency range. The phase distribution of the metasurfaces and the efficacy of the transmissive cloak are assessed using the generalized Snell's law. An experimental near-perfect broadband transmissive cloak is successfully demonstrated to operate within the frequency range of 8.5 to 11.2 GHz. This study contributes to reducing the density and mass of cloaks, thereby facilitating the expansion of cloaking capabilities in various directions and across different frequency bands.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":null,"pages":null},"PeriodicalIF":11.0,"publicationDate":"2024-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141334508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yujia Wan, Peipei Dang, Dongjie Liu, Hongzhou Lian, Guogang Li, Jun Lin
Narrow-band cyan-emitting materials for white light-emitting diode (wLED) application have shown great potential in increasing the maximum accessible display gamut and improving the color rendering of full-spectrum healthy lighting. However, the discovery of novel narrow-band cyan emitters with excellent luminescence performances remains challenging. Here, an ultra-narrow-band cyan-emitting Na5K3(Li3SiO4)8:Eu2+ (N5K3:Eu2+) phosphor (λem = 483 nm) with full width at half maximum (FWHM) of only 18 nm is developed from some typical UCr4C4 frameworks phosphors by slightly modifying crystal structure and symmetry. Through controllable regulation of the ratio of Na and K from Na4K4(Li3SiO4)8:Eu2+ (N4K4:Eu2+) and Na6K2(Li3SiO4)8:Eu2+ (N6K2:Eu2+) to N5K3:Eu2+, the lattice sites forming shoulder peaks are further squeezed to generate the narrowest cyan emission. Moreover, the N5K3:Eu2+ exhibits low photoluminescence thermal quenching (90%@150 °C) and high internal quantum efficiency (IQE) of 50%. The color rendering index of wLED for full-spectrum health lighting is enhanced from 92 to 94. Using this short-wavelength cyan emission instead of a part of the emission from a blue chip can effectively prevent “blue hazard”. This work provides basic principles for the design of ultra-narrow-band phosphors, thus achieving their applications in the fields of healthy lighting and eye-friendly display.
{"title":"Crystallographic Engineering to Develop Ultra-Narrow-Band Cyan-Emitting UCr4C4-Type Phosphor for Healthy LED Lighting and Display","authors":"Yujia Wan, Peipei Dang, Dongjie Liu, Hongzhou Lian, Guogang Li, Jun Lin","doi":"10.1002/lpor.202400651","DOIUrl":"https://doi.org/10.1002/lpor.202400651","url":null,"abstract":"Narrow-band cyan-emitting materials for white light-emitting diode (wLED) application have shown great potential in increasing the maximum accessible display gamut and improving the color rendering of full-spectrum healthy lighting. However, the discovery of novel narrow-band cyan emitters with excellent luminescence performances remains challenging. Here, an ultra-narrow-band cyan-emitting Na<sub>5</sub>K<sub>3</sub>(Li<sub>3</sub>SiO<sub>4</sub>)<sub>8</sub>:Eu<sup>2+</sup> (N<sub>5</sub>K<sub>3</sub>:Eu<sup>2+</sup>) phosphor (λ<sub>em</sub> = 483 nm) with full width at half maximum (FWHM) of only 18 nm is developed from some typical UCr<sub>4</sub>C<sub>4</sub> frameworks phosphors by slightly modifying crystal structure and symmetry. Through controllable regulation of the ratio of Na and K from Na<sub>4</sub>K<sub>4</sub>(Li<sub>3</sub>SiO<sub>4</sub>)<sub>8</sub>:Eu<sup>2+</sup> (N<sub>4</sub>K<sub>4</sub>:Eu<sup>2+</sup>) and Na<sub>6</sub>K<sub>2</sub>(Li<sub>3</sub>SiO<sub>4</sub>)<sub>8</sub>:Eu<sup>2+</sup> (N<sub>6</sub>K<sub>2</sub>:Eu<sup>2+</sup>) to N<sub>5</sub>K<sub>3</sub>:Eu<sup>2+</sup>, the lattice sites forming shoulder peaks are further squeezed to generate the narrowest cyan emission. Moreover, the N<sub>5</sub>K<sub>3</sub>:Eu<sup>2+</sup> exhibits low photoluminescence thermal quenching (90%@150 °C) and high internal quantum efficiency (IQE) of 50%. The color rendering index of wLED for full-spectrum health lighting is enhanced from 92 to 94. Using this short-wavelength cyan emission instead of a part of the emission from a blue chip can effectively prevent “blue hazard”. This work provides basic principles for the design of ultra-narrow-band phosphors, thus achieving their applications in the fields of healthy lighting and eye-friendly display.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":null,"pages":null},"PeriodicalIF":11.0,"publicationDate":"2024-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141334539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Despite their exceptional sensitivity, single photon detectors typically exhibit limited tolerance to strong light compared to conventional linear photodetectors. Consequently, a disparity arises between these two detector types, hindering the achievement of both high sensitivity and high dynamic range in sensing and imaging. To bridge this gap, a segmented architecture is implemented with a waveform-variance readout scheme for extacting high-flux photon informaiton.This approach gives an unprecedented ultra-high dynamic range of 75 dB at a fixed bias current, where single photon counting mode and quasi-linear photodetection mode coexist. High-dynamic imaging, passive thermal imaging, and joint active and passive imaging are demonstrated, which validate the advantages of this dual-mode detector. Such a versatile detector will offer enhanced flexibility, single-photon sensitivity, as well as ultra-wide dynamic range across various scientific and technical domains.
尽管单光子探测器具有超凡的灵敏度，但与传统的线性光电探测器相比，单光子探测器通常对强光的耐受力有限。因此，这两种探测器之间存在差距，阻碍了在传感和成像中实现高灵敏度和高动态范围。为了弥补这一差距，我们采用了一种分段式结构，并采用波形变异读出方案来获取高通量光子信息。这种方法在固定偏置电流下实现了前所未有的 75 dB 超高动态范围，其中单光子计数模式和准线性光子检测模式并存。高动态成像、被动热成像以及主动和被动联合成像的演示验证了这种双模式探测器的优势。这种多功能探测器将为各种科学和技术领域提供更高的灵活性、单光子灵敏度以及超宽动态范围。
{"title":"Ultrawide Dynamic Sensing from Single-Photon Counting to Linear Detection Using a Segmented Superconducting Nanowire","authors":"Sai-Ying Ru, Hao Hao, Qing-Yuan Zhao, Zhi-Jian Li, Hao Liu, Zhen Liu, Jie Deng, Yang-Hui Huang, Fan Yang, Nai-Tao Liu, Chao Wan, Xue-Cou Tu, La-Bao Zhang, Xiao-Qing Jia, Jian Chen, Lin Kang, Pei-Heng Wu","doi":"10.1002/lpor.202400483","DOIUrl":"https://doi.org/10.1002/lpor.202400483","url":null,"abstract":"Despite their exceptional sensitivity, single photon detectors typically exhibit limited tolerance to strong light compared to conventional linear photodetectors. Consequently, a disparity arises between these two detector types, hindering the achievement of both high sensitivity and high dynamic range in sensing and imaging. To bridge this gap, a segmented architecture is implemented with a waveform-variance readout scheme for extacting high-flux photon informaiton.This approach gives an unprecedented ultra-high dynamic range of 75 dB at a fixed bias current, where single photon counting mode and quasi-linear photodetection mode coexist. High-dynamic imaging, passive thermal imaging, and joint active and passive imaging are demonstrated, which validate the advantages of this dual-mode detector. Such a versatile detector will offer enhanced flexibility, single-photon sensitivity, as well as ultra-wide dynamic range across various scientific and technical domains.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":null,"pages":null},"PeriodicalIF":11.0,"publicationDate":"2024-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141334601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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