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Photo-Excitations in Halide Perovskites: Where Do Simulations and Experiments Meet? 卤化物钙钛矿的光激发：模拟和实验在哪里相遇？

IF 11 1区物理与天体物理 Q1 OPTICS

Laser & Photonics Reviews

Pub Date : 2026-02-06 DOI: 10.1002/lpor.202401020

Muhammad Sufyan Ramzan, Antonietta De Sio, Alexander Steinhoff, Frank Jahnke, Christoph Lienau, Caterina Cocchi

The development of experimental methods monitoring the generation of photo-excitations and their dynamics on the natural temporal and spatial scales of the electrons has opened up fascinating perspectives to better understand fundamental processes driven by light–matter couplings and use them to design new functional materials. This horizon, however, is shadowed by challenges related to the interpretation and rationalization of the observables. Theory can help to overcome these issues only if the available approaches – both ab initio and based on model Hamiltonians – are complementary to experiments and not merely ancillary to them. In this perspective, we present state-of-the-art experimental and theoretical methods to investigate photo-excitations and their dynamics in complex materials, taking bulk CsPbBr₃ as a prototypical example. Experimentally, we show the ability of two-dimensional electronic spectroscopy to shed light onto the electronic and vibronic excitation landscape of this system, in particular giving access to exciton–phonon coupling mechanisms. From the theory side, we discuss the advantages and drawbacks of first-principles calculations and effective methods based on the semiconductor Bloch equations. By unveiling strengths and bottlenecks of the presented approaches, we suggest viable strategies to make simulations and experiments finally join hands.

监测光激发的产生及其在电子的自然时空尺度上的动力学的实验方法的发展，为更好地理解由光物质耦合驱动的基本过程并利用它们来设计新的功能材料开辟了迷人的视角。然而，这一前景受到与观测结果的解释和合理化有关的挑战的影响。只有当可用的方法——从头算和基于哈密顿模型的方法——是对实验的补充，而不仅仅是辅助时，理论才能帮助克服这些问题。从这个角度来看，我们提出了最先进的实验和理论方法来研究复杂材料中的光激发及其动力学，以块状CsPbBr3为原型例子。实验上，我们展示了二维电子能谱的能力，揭示了该系统的电子和振动激发景观，特别是提供了激子-声子耦合机制。从理论方面讨论了基于半导体Bloch方程的第一性原理计算和有效方法的优缺点。通过揭示现有方法的优势和瓶颈，我们提出了可行的策略，使模拟和实验最终结合起来。

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引用次数: 0

Ultralow-Backscattering Induced Mode Splitting in Chipscale Valley Photonic Topological Cavities 芯片级谷光子拓扑腔中的超低后向散射诱导模式分裂

IF 11 1区物理与天体物理 Q1 OPTICS

Laser & Photonics Reviews

Pub Date : 2026-02-06 DOI: 10.1002/lpor.202503189

Kaiji Chen, Wenhao Wang, Yi Ji Tan, Zhonglei Shen, Ridong Jia, Ranjan Singh

Topological valley photonic crystals hold substantial potential for on-chip integration owing to their backscattering protection against sharp corners and fabrication imperfections. Topological interfaces enable compact and flexible photonic routing critical for the miniaturization, scalability and energy efficiency of photonic chips. However, such reciprocal topological photonic devices inevitably experience backscattering loss, and effective in-situ methods for quantifying the robustness remain unavailable. Here, we report that ultralow backscattering at sharp corners induces mode splitting in a topological cavity, serving as a self-detection methodology for its quantitative evaluation. The overall backscattering loss at the level of 0.10 dB/bend over a broad topological bandgap of 37 GHz, with a minimum of 0.047 dB/bend near the K valley, demonstrates the near-perfect photon transport of valley edge state through sharp corners. The high-resolution terahertz spectral measurements in cavity-waveguide coupled silicon chips confirm an extremely low loss of 0.09 dB/bend. Our work uncovers the universal mechanism of mode splitting and introduces a quantitative framework to measure the backscatteringloss dispersion in topological valley photonics. Mode splitting emerges as a new degree of freedom for spectral engineering in integrated topological devices, paving new ways toward multi-channel communications, high-sensitivity photonic sensing, and quantum information processing.

拓扑谷光子晶体由于其对尖角和制造缺陷的后向散射保护而具有很大的片上集成潜力。拓扑接口实现了紧凑和灵活的光子路由，这对光子芯片的小型化、可扩展性和能量效率至关重要。然而，这种互反拓扑光子器件不可避免地会经历后向散射损耗，并且仍然没有有效的原位量化鲁棒性的方法。在这里，我们报道了在尖角处的超低后向散射诱导拓扑腔中的模式分裂，作为其定量评估的自检测方法。在37 GHz宽拓扑带隙上，总后向散射损耗为0.10 dB/弯曲，K谷附近最小损耗为0.047 dB/弯曲，表明光子在谷边状态下通过尖角的传输近乎完美。在腔波导耦合硅芯片上的高分辨率太赫兹频谱测量证实了极低的0.09 dB/弯曲损耗。我们的工作揭示了模式分裂的普遍机制，并引入了一个定量框架来测量拓扑谷光子的后向散射损耗色散。模式分裂作为集成拓扑器件中光谱工程的一个新的自由度出现，为多通道通信、高灵敏度光子传感和量子信息处理开辟了新的途径。

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引用次数: 0

Synthesis of Core–Shell Te@Se Quantum Dots and Their Broadband Photodetector Performance in Low Concentration Electrolytes 核-壳Te@Se量子点的合成及其在低浓度电解质中的宽带光电探测器性能

IF 11 1区物理与天体物理 Q1 OPTICS

Laser & Photonics Reviews

Pub Date : 2026-02-06 DOI: 10.1002/lpor.202503087

Yiming Zhao, Artem V. Kuklin, Jiahui Hou, Mingqi He, Lyudmila V. Begunovich, Han Zhang, Ying Li, Hans Ågren, Lingfeng Gao

Along with the increased attention of core–shell heterojunction quantum dots (QDs), there have been recent strong efforts to improve their practical applications by developing the synthetic approaches. In this work, uniform Te@Se core–shell QDs have been successfully fabricated via combining liquid-phase exfoliation and epitaxial growth methods, where the similar lattice structures of the materials from the same main group can effectively solve the lattice mismatch issue. Theoretical calculations reveal that the Te@Se material is a Type-I heterojunction with favorable initial electron transfer from core Te to shell Se upon formation. The photo-response performance of Te@Se QDs is systematically investigated by producing photoelectrochemical type photodetectors in low concentration electrolytes (0.1–10 mM), for which optimized photocurrent density (32.63 µA/cm²) and photoresponsivity (1564 µA/W) could be achieved. The device also exhibits fast response and excellent stability, which could overcome instability issues in high-concentration electrolytes and expand the practical applications.

随着人们对核壳异质结量子点（QDs）的关注日益增加，近年来人们通过开发合成方法来提高其实际应用。本文通过液相剥离和外延生长相结合的方法成功制备了均匀的Te@Se核壳量子点，其中来自同一主群的材料具有相似的晶格结构，可以有效地解决晶格失配问题。理论计算表明Te@Se材料是i型异质结，形成时具有良好的初始电子从Te核向Se壳转移。通过在低浓度电解质（0.1 ~ 10 mM）中制备光电化学型光电探测器，系统地研究了Te@Se量子点的光响应性能，获得了最优的光电流密度（32.63µA/cm2）和光响应率（1564µA/W）。该装置还具有快速响应和优异的稳定性，可以克服高浓度电解质中的不稳定性问题，扩大实际应用范围。

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引用次数: 0

Heat-Assisted Reversal of Femtosecond Laser-Induced Birefringence 飞秒激光诱导双折射的热辅助反转

IF 11 1区物理与天体物理 Q1 OPTICS

Laser & Photonics Reviews

Pub Date : 2026-02-06 DOI: 10.1002/lpor.202502928

Yanxia Liu, Peiyao Li, Yu Rao, Yinsheng Xu, Ping Lu, Lei Wang, Rokas Drevinskas, Jianrong Qiu, Jingyu Zhang

Precisely embedding designed nanostructures in homogeneous materials is essential for the development of high-performance photonic devices. However, existing techniques typically struggle to achieve simultaneous control over location and yield, limiting their use in optical data storage and integrated photonics. Here, we report an observation of a heat-assisted birefringence orientation reversal (HABOR) phenomenon in lithium disilicate glass. Based on this phenomenon, we propose a method that enables precise spatial control of crystallization while maintaining high yield. The method employs femtosecond laser direct writing combined with heat treatment, facilitating oriented nanocrystal growth with an intriguing reversal of the birefringence slow-axis orientation. In particular, the oriented nanocrystals produce birefringence retardance up to 35.11 ± 2.34 nm, which is 6.80 times higher than that achieved by femtosecond laser direct writing. Their birefringence shows excellent thermal stability, with retardance remaining relatively stable over 24 h at 700°C. These superior properties enable applications in 5D optical data storage, fabrication of arbitrary retarders and varying optical elements.

在均匀材料中精确嵌入设计好的纳米结构对于高性能光子器件的发展至关重要。然而，现有的技术通常难以同时控制位置和产量，限制了它们在光学数据存储和集成光子学中的应用。在这里，我们报告了在二硅酸锂玻璃中观察到的热辅助双折射取向反转（HABOR）现象。基于这一现象，我们提出了一种能够在保持高收率的同时精确控制结晶空间的方法。该方法采用飞秒激光直接写入与热处理相结合，促进了定向纳米晶体的生长，并具有双折射慢轴取向的有趣反转。取向纳米晶体的双折射延迟达到35.11±2.34 nm，是飞秒激光直写的6.80倍。它们的双折射性能表现出优异的热稳定性，在700°C下，缓阻率在24小时内保持相对稳定。这些优越的性能使5D光学数据存储，任意缓速器和各种光学元件的制造应用成为可能。

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引用次数: 0

Random Telegraph Signal Noise in High‐Gain SWIR Heterojunction Phototransistors 高增益SWIR异质结光电晶体管中的随机电报信号噪声

IF 11 1区物理与天体物理 Q1 OPTICS

Laser & Photonics Reviews

Pub Date : 2026-02-06 DOI: 10.1002/lpor.202502759

Zheyuan Shen, Zeping Zhao, Lingyun Zhuang, Lu Cheng, Haolei Feng, Lining Liu, Jianguo Liu

InP/InGaAs‐based heterojunction phototransistors (HPTs) are promising for ultrasensitive short‐wave infrared (SWIR) detection due to their high internal gain, low excess noise, and low power consumption. This work demonstrates an HPT achieving a high optical gain of ∼1200 at −2 V bias, with dark current lower than state‐of‐the‐art avalanche photodiodes (APD). To further push its sensitivity to the limit for weak light/ultra‐long‐distance imaging, the noise mechanism in low frequency (LF) regime and its origins have been investigated, by which generation current in depletion region caused by the defect‐related traps is explored and studied. In particular, the LF noise power is found to be independent of the internal gain. A Hooge's constant of 2.1 × 10 −5 is reported for the first time in gain‐based detectors, comparable to HgCdTe devices. Remarkably, temperature‐dependent multi‐level random telegraph signal (RTS) analysis reveals two dominant origins of the generation current, corresponding to relaxation processes of two typical types of mid‐gap traps. One is Zn‐related extrinsic defects caused by Zn diffusion into the InP emitter, while the other is Ga‐related intrinsic defects in InGaAs collector. As the guideline for optimizing the HPT detector design, this work paves the way to further improve the sensitivity for low‐flux SWIR photodetection.

基于InP/InGaAs的异质结光电晶体管（hpt）由于其高内部增益、低过量噪声和低功耗，在超灵敏短波红外（SWIR）检测中具有广阔的应用前景。这项工作证明了HPT在- 2 V偏置下实现了约1200的高光增益，暗电流低于最先进的雪崩光电二极管（APD）。为了进一步将其灵敏度提高到弱光/超长距离成像的极限，研究了低频（LF）区域的噪声机制及其来源，从而探索和研究了缺陷相关陷阱引起的耗尽区产生电流。特别是，低频噪声功率与内部增益无关。在基于增益的探测器中首次报道了2.1 × 10−5的Hooge常数，可与HgCdTe器件相媲美。值得注意的是，温度相关的多电平随机电报信号（RTS）分析揭示了产生电流的两个主要来源，对应于两种典型类型的中隙陷阱的弛豫过程。一种是Zn扩散到InP发射极引起的Zn相关的外源性缺陷，另一种是InGaAs捕集器中Ga相关的内源性缺陷。该研究为进一步提高低通量SWIR光探测的灵敏度奠定了基础，为优化HPT探测器的设计提供了指导。

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引用次数: 0

Patterning of Photoresist-Compatible Perovskite Quantum Dots for High-Definition Displays 用于高清晰度显示器的光阻兼容钙钛矿量子点的图像化

IF 11 1区物理与天体物理 Q1 OPTICS

Laser & Photonics Reviews

Pub Date : 2026-02-06 DOI: 10.1002/lpor.202502933

Haoyu Wang, Chengzhao Luo, Yanhui Ding, Zhenwei Ren, Chenyang Fan, Zixuan Chen, Xin Zhou, Zhiyong Zheng, Yu Chen

The patterning of perovskite quantum dots (PQDs) represents a critical step toward high-resolution displays. Although blending PQDs with photoresists enables lithographic integration, their intrinsic ionic character and poor stability lead to severe erosion and fluorescence quenching when exposed to polar components. To overcome these challenges, a stabilized PQD-photoresist nanocomposite has been developed through multi-step encapsulation. First, in situ growth of PQDs on amino silane-functionalized silica nanoparticles suppresses aggregation. Potassium ions are then incorporated to passivate the surface defects. Finally, a fluorinated silane forms a protective barrier against polar species. The resulting nanocomposite achieves up to 96% photoluminescence quantum yield and exceptional thermal stability, maintaining 99% initial emission after 80 days at 85°C. It can be uniformly dispersed in negative-tone photoresist and patterned via UV lithography, producing well-defined microstructures with minimum linewidths of 1.5 µm (11200 pixels per inch, PPI). Dual-color patterning with 15 µm linewidths for green and red PQDs achieves 560 PPI. A white-light prototype integrating these color-conversion layers with a blue Mini-LED and liquid crystal panel demonstrates a color gamut covering 132% of the NTSC standard. This work provides a robust, scalable platform for integrating high-performance PQDs into micro-optoelectronics.

钙钛矿量子点（PQDs）的图案是迈向高分辨率显示器的关键一步。虽然PQDs与光刻胶混合可以实现光刻集成，但其固有的离子特性和较差的稳定性导致暴露于极性组分时严重的侵蚀和荧光猝灭。为了克服这些挑战，通过多步骤封装开发了稳定的pqd光刻胶纳米复合材料。首先，在氨基硅烷功能化二氧化硅纳米颗粒上原位生长PQDs抑制了聚集。然后加入钾离子使表面缺陷钝化。最后，氟化硅烷形成对极性物种的保护屏障。所得到的纳米复合材料实现了高达96%的光致发光量子产率和优异的热稳定性，在85°C下80天后保持99%的初始发光。它可以均匀地分散在负色调光刻胶中，并通过UV光刻进行图像化，产生最小线宽为1.5 μ m（每英寸11200像素，PPI）的明确微结构。双色图案与15µm线宽的绿色和红色pqd实现560ppi。将这些颜色转换层与蓝色Mini-LED和液晶面板集成在一起的白光原型显示，其色域覆盖了NTSC标准的132%。这项工作为将高性能pqd集成到微光电子中提供了一个强大的，可扩展的平台。

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引用次数: 0

Ultra-Broadband Self-Trapped Exciton Emission of (TPA)2Cu4Br6 for UV Single-Pixel Imaging (Laser Photonics Rev. 20(3)/2026) （TPA） 2 Cu 4 br6的超宽带自捕获激子发射用于紫外单像素成像（激光光子学Rev. 20(3)/2026）

IF 1 1区物理与天体物理 Q1 OPTICS

Laser & Photonics Reviews

Pub Date : 2026-02-05 DOI: 10.1002/lpor.70883

Jianbang Mu, Kun Zheng, Yanlin Mi, Haifeng Yao, Chang Zhou, Quanchao Zhao, Bingkun Chen, Jie Cao, Qun Hao

Broadband STE Emission for UV Single-Pixel Imaging

In Research Article e02218, Kun Zheng, Jie Cao, Qun Hao and co-workers report a lead-free 0D copper halide, (TPA)₂Cu₄Br₆, featuring ultra-broad self-trapped-exciton emission, high quantum yield, and strong spectral overlap with silicon detectors. Integrated into a bioinspired single-pixel imaging system, it enables high-fidelity UV imaging under low sampling and low-light conditions.

在论文e02218中，郑坤、曹杰、郝群等报道了一种无铅的0D卤化铜（TPA）2Cu4Br6，具有超宽自捕获激子发射、高量子产率和与硅探测器强光谱重叠的特点。集成到生物启发的单像素成像系统中，它可以在低采样和低光条件下实现高保真紫外成像。

引用次数: 0

Issue Information: Laser & Photon. Rev. 20(3)/2026 发行信息：Laser & Photon。启二十(3)/ 2026

IF 1 1区物理与天体物理 Q1 OPTICS

Laser & Photonics Reviews

Pub Date : 2026-02-05 DOI: 10.1002/lpor.70882

引用次数: 0

Breaking the Resolution Barrier in Incoherent Structured Illumination Microscopy via High-Modulation Coefficient Mapping and Principal Component Analysis (PCA-iSIM) (Laser Photonics Rev. 20(3)/2026) 利用高调制系数映射和主成分分析（PCA - iSIM）打破非相干结构照明显微镜的分辨率障碍（激光光子学报，20(3)/2026）

IF 1 1区物理与天体物理 Q1 OPTICS

Laser & Photonics Reviews

Pub Date : 2026-02-05 DOI: 10.1002/lpor.70881

Maoxian Zhang, Xinyu Han, Jiaming Qian, Hongjun Wu, Tianchi Kang, Dongqin Lu, Jing Feng, Weihao Cheng, Yuzhen Zhang, Qian Chen, Chao Zuo

Breaking the Incoherent SIM Barrier

A compact incoherent DMD-SIM platform empowered by high-modulation coefficient mapping and principal component analysis (PCA) to overcome weak fringe visibility enables robust illumination parameter recovery and delivers real-time live-cell super-resolution imaging with >1.9× resolution gain (≈100°nm) at 30°Hz. More information can be found in Research Article e01957 by Jiaming Qian, Yuzhen Zhang, Qian Chen, Chao Zuo and co-workers.

barria紧凑的非相干DMD-SIM平台通过高调制系数映射和主成分分析（PCA）来克服弱条纹可见性，能够实现鲁棒的照明参数恢复，并在30°Hz下提供具有1.9倍分辨率增益（≈100°nm）的实时活细胞超分辨率成像。更多信息见钱嘉明、张玉珍、陈茜、左超等人的研究文章e01957。

引用次数: 0

All-Fiber Microsensor of Polarization at Single-Photon Level Aided by Deep Learning (Laser Photonics Rev. 20(3)/2026) 基于深度学习辅助的单光子偏振全光纤微传感器（Laser Photonics Rev. 20(3)/2026）

IF 1 1区物理与天体物理 Q1 OPTICS

Laser & Photonics Reviews

Pub Date : 2026-02-05 DOI: 10.1002/lpor.70880

Martin Bielak, Dominik Vašinka, Miroslav Ježek

From Disorder to Knowledge

To harness deep learning to recover polarization information from the chaotic speckle created by a short piece of a few-mode fiber, Miroslav Ježek and co-workers have built an all-fiber, AI-assisted sensor that reconstructs complete polarization states at single-photon levels. Their work, presented in Research Article e01775, demonstrated high-speed polarization sensing with unprecedented accuracy for diagnostic applications in material and biomedical research. Illustration by Monika Tomanova.

为了利用深度学习从短段少模光纤产生的混沌斑点中恢复偏振信息，Miroslav Ježek和同事已经构建了一种全光纤人工智能辅助传感器，可以在单光子水平上重建完整的偏振状态。他们的工作发表在研究文章e01775上，展示了高速极化传感在材料和生物医学研究诊断应用中的前所未有的准确性。Monika Tomanova插图。

引用次数: 0

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