Lilong Ma, Hongkun Zhong, Tao Yang, Leiying Ying, Jinhui Chen, Zhan Su, Shaoqiang Chen, Guoen Weng, Yang Mei, Baoping Zhang
On-chip integrated microlaser sources are critical components in silicon (Si) photonics, which has become one of the leading photonic integrated circuits (PICs) technologies due to low cost, eco-friendly, large-scale integration and inherent compatibility for complementary metal-oxide-semiconductor (CMOS) manufacturing processes. Until now, however, it still remains a significant challenge to achieve an active microlaser with a quality factor of up to 104 and heterogeneous integration of multiple broadband wavelength-tunable microlasers for Si-based PICs. Here, a scalable strategy is reported to realize simultaneous integration of multiwavelength GaN-based microdisk laser arrays on Si(100) substrates. The microlaser exhibits a high-quality factor of 13 138 and a low threshold density of 57.85 µJ cm−2. By precisely modulating the microdisk size and/or shape and thus the corresponding cavity loss, the lasing wavelength can be dynamically tuned over a large spectral range from 455 to 503 nm, which is physically unraveled by the gain profile shifting for different threshold energy levels conditions. This study opens a new path toward the realization of on-chip integrated broadband multiwavelength laser sources for Si-PICs platform, where only an epi-wafer and a single round of wafer bonding processes are needed.
{"title":"On-Chip Broadband Multiwavelength Microlaser Array in Visible Region","authors":"Lilong Ma, Hongkun Zhong, Tao Yang, Leiying Ying, Jinhui Chen, Zhan Su, Shaoqiang Chen, Guoen Weng, Yang Mei, Baoping Zhang","doi":"10.1002/lpor.202500151","DOIUrl":"https://doi.org/10.1002/lpor.202500151","url":null,"abstract":"On-chip integrated microlaser sources are critical components in silicon (Si) photonics, which has become one of the leading photonic integrated circuits (PICs) technologies due to low cost, eco-friendly, large-scale integration and inherent compatibility for complementary metal-oxide-semiconductor (CMOS) manufacturing processes. Until now, however, it still remains a significant challenge to achieve an active microlaser with a quality factor of up to 10<sup>4</sup> and heterogeneous integration of multiple broadband wavelength-tunable microlasers for Si-based PICs. Here, a scalable strategy is reported to realize simultaneous integration of multiwavelength GaN-based microdisk laser arrays on Si(100) substrates. The microlaser exhibits a high-quality factor of 13 138 and a low threshold density of 57.85 µJ cm<sup>−2</sup>. By precisely modulating the microdisk size and/or shape and thus the corresponding cavity loss, the lasing wavelength can be dynamically tuned over a large spectral range from 455 to 503 nm, which is physically unraveled by the gain profile shifting for different threshold energy levels conditions. This study opens a new path toward the realization of on-chip integrated broadband multiwavelength laser sources for Si-PICs platform, where only an epi-wafer and a single round of wafer bonding processes are needed.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":"27 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143758688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zhuowei Li, Ge Zhu, Heyang Li, Qi Zhu, Yan Cong, Xue Bai, Ji-Guang Li, Bin Dong
Yb3+ is regarded as an efficient near-infrared-II (NIR-II) emitting activator, which has been widely used in energy conversion, up-conversion luminescence and optical communication. However, the simple energy level structure of Yb3+ makes it can only be excited by ultraviolet or infrared light, which limits their application in the currently booming phosphor converted NIR-II light emitting diodes (NIR-II pc-LEDs). Here, “Eu2+ bridge” strategy is presented to largely extend Yb3+ absorption to visible range, and successfully realize efficient visible light pumped NIR-II emission via energy transfer from Eu2+ to Yb3+. Meanwhile, to balance the valence state of reduced Eu2+ and oxidized Yb3+, the pre-prepared EuS is used as precursor instead of Eu2O3, which significantly increases the NIR-II luminescence of Yb3+ by 6 times. Detailed energy transfer and luminescence enhancement mechanism are discussed. Finally, a NIR-II pc-LED is fabricated with photoelectric efficiency of 12.61%@50 mA and output power of 74.09 mW@300 mA. Subsequently, a miniaturized and real-time test system is integrated based on the convolutional neural network technology to accurate predict organic solvents with different concentrations. This study not only introduces a new strategy to realize visible light-excited Yb3+-doped NIR-II emitting phosphors, but also promotes their innovative application based on NIR spectroscopy technology.
{"title":"Visible Light Excited Yb3+-Doped Phosphor Via Eu2+ Bridged Energy Transfer Toward NIR-II Spectroscopy Application","authors":"Zhuowei Li, Ge Zhu, Heyang Li, Qi Zhu, Yan Cong, Xue Bai, Ji-Guang Li, Bin Dong","doi":"10.1002/lpor.202402162","DOIUrl":"https://doi.org/10.1002/lpor.202402162","url":null,"abstract":"Yb<sup>3+</sup> is regarded as an efficient near-infrared-II (NIR-II) emitting activator, which has been widely used in energy conversion, up-conversion luminescence and optical communication. However, the simple energy level structure of Yb<sup>3+</sup> makes it can only be excited by ultraviolet or infrared light, which limits their application in the currently booming phosphor converted NIR-II light emitting diodes (NIR-II pc-LEDs). Here, “Eu<sup>2+</sup> bridge” strategy is presented to largely extend Yb<sup>3+</sup> absorption to visible range, and successfully realize efficient visible light pumped NIR-II emission via energy transfer from Eu<sup>2+</sup> to Yb<sup>3+</sup>. Meanwhile, to balance the valence state of reduced Eu<sup>2+</sup> and oxidized Yb<sup>3+</sup>, the pre-prepared EuS is used as precursor instead of Eu<sub>2</sub>O<sub>3</sub>, which significantly increases the NIR-II luminescence of Yb<sup>3+</sup> by 6 times. Detailed energy transfer and luminescence enhancement mechanism are discussed. Finally, a NIR-II pc-LED is fabricated with photoelectric efficiency of 12.61%@50 mA and output power of 74.09 mW@300 mA. Subsequently, a miniaturized and real-time test system is integrated based on the convolutional neural network technology to accurate predict organic solvents with different concentrations. This study not only introduces a new strategy to realize visible light-excited Yb<sup>3+</sup>-doped NIR-II emitting phosphors, but also promotes their innovative application based on NIR spectroscopy technology.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":"183 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143767127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shuxin Chen, Zonglun Li, Shucong Li, Kunbo Xu, Nan Ma, Lei Yue, Xilian Jin, Ran Liu, Qing Dong, Quanjun Li, Bingbing Liu
The burgeoning demand for efficient photoelectric devices has ignited a fervent exploration of strategies for regulating their performance. Herein, the enhancement and polarity switching in the photoresponse of MoS2 photovoltaic devices with asymmetric electrodes are showcased by employing a pressure band engineering strategy. Specifically, the photoresponse of the Pt/MoS2/Ag setup escalates from 2 A W⁻¹ at 0.5 GPa to 4 A W⁻¹ at 2.3 GPa, showcasing a twofold enhancement, while displaying a successive decrease under higher pressure. Unforgettable is the fascinating and uncommon polarity switching behavior observed at 5.0 GPa in the Pt/MoS2/Au device, accompanied by a gradual decrease in photoresponse, implying its potential applications in logic gate devices. The dynamic evolution of photoresponse in Pt/MoS2/Ag and Pt/MoS2/Au devices can be ascribed to the variations in the bandgap, electron affinity, and work function of MoS2 under high pressure, arising from the intensified interlayer interactions within MoS2. These findings validate the feasibility of enhancing photovoltaic device performance under pressure and unveil new avenues for exploring, manipulating, and comprehending high-efficiency and multifunction photoelectric devices.
{"title":"Enhanced and Polarity-Switchable Photoresponse in MoS2 with Asymmetric Metal Contact via Pressure Band Engineering","authors":"Shuxin Chen, Zonglun Li, Shucong Li, Kunbo Xu, Nan Ma, Lei Yue, Xilian Jin, Ran Liu, Qing Dong, Quanjun Li, Bingbing Liu","doi":"10.1002/lpor.202500250","DOIUrl":"https://doi.org/10.1002/lpor.202500250","url":null,"abstract":"The burgeoning demand for efficient photoelectric devices has ignited a fervent exploration of strategies for regulating their performance. Herein, the enhancement and polarity switching in the photoresponse of MoS<sub>2</sub> photovoltaic devices with asymmetric electrodes are showcased by employing a pressure band engineering strategy. Specifically, the photoresponse of the Pt/MoS<sub>2</sub>/Ag setup escalates from 2 A W⁻¹ at 0.5 GPa to 4 A W⁻¹ at 2.3 GPa, showcasing a twofold enhancement, while displaying a successive decrease under higher pressure. Unforgettable is the fascinating and uncommon polarity switching behavior observed at 5.0 GPa in the Pt/MoS<sub>2</sub>/Au device, accompanied by a gradual decrease in photoresponse, implying its potential applications in logic gate devices. The dynamic evolution of photoresponse in Pt/MoS<sub>2</sub>/Ag and Pt/MoS<sub>2</sub>/Au devices can be ascribed to the variations in the bandgap, electron affinity, and work function of MoS<sub>2</sub> under high pressure, arising from the intensified interlayer interactions within MoS<sub>2</sub>. These findings validate the feasibility of enhancing photovoltaic device performance under pressure and unveil new avenues for exploring, manipulating, and comprehending high-efficiency and multifunction photoelectric devices.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":"25 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143758114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jia-Wen Wu, Wen-Jun Li, Guang-Xin Liu, Rong-Jun Huang, Hu Cui, Zhi-Chao Luo, Wen-Cheng Xu, Xiao-Sheng Xiao, Xin-Huan Feng, Ai-Ping Luo
3D solitons in spatiotemporal mode-locked (STML) fiber lasers have garnered significant attention due to their distinctive mode characteristics. However, the detailed characterization of individual modes remains challenging, limited by current measurement equipment and techniques. Here, a straightforward real-time method leveraging both modal dispersion and chromatic dispersion, called the spatiotemporal dispersive Fourier transform (ST-DFT) technique, is proposed for the individual mode characterization of 3D solitons within STML fiber lasers. By utilizing a segment of two-mode fiber, the ST-DFT technique is effectively employed for the individual mode characterization of 3D single, multiple, and harmonic solitons, with each mode being precisely calibrated. For single solitons, the solitons with identical or distinct peak wavelengths for different modes are observed. For multiple solitons and harmonic solitons, the peak wavelengths of different modes within the same soliton can be either identical or distinct as well, as observed in the single solitons. However, different solitons exhibit identical peak wavelengths for the same modes, indicating that the mode characteristics of different solitons within multiple solitons and harmonic solitons are identical. The findings reveal the individual mode characteristics of 3D solitons and deepen the understanding of their formation mechanisms, advancing the investigations and applications of STML fiber lasers.
{"title":"Individual Mode Characterization of 3D Solitons in a Spatiotemporal Mode-Locked Fiber Laser","authors":"Jia-Wen Wu, Wen-Jun Li, Guang-Xin Liu, Rong-Jun Huang, Hu Cui, Zhi-Chao Luo, Wen-Cheng Xu, Xiao-Sheng Xiao, Xin-Huan Feng, Ai-Ping Luo","doi":"10.1002/lpor.202500199","DOIUrl":"https://doi.org/10.1002/lpor.202500199","url":null,"abstract":"3D solitons in spatiotemporal mode-locked (STML) fiber lasers have garnered significant attention due to their distinctive mode characteristics. However, the detailed characterization of individual modes remains challenging, limited by current measurement equipment and techniques. Here, a straightforward real-time method leveraging both modal dispersion and chromatic dispersion, called the spatiotemporal dispersive Fourier transform (ST-DFT) technique, is proposed for the individual mode characterization of 3D solitons within STML fiber lasers. By utilizing a segment of two-mode fiber, the ST-DFT technique is effectively employed for the individual mode characterization of 3D single, multiple, and harmonic solitons, with each mode being precisely calibrated. For single solitons, the solitons with identical or distinct peak wavelengths for different modes are observed. For multiple solitons and harmonic solitons, the peak wavelengths of different modes within the same soliton can be either identical or distinct as well, as observed in the single solitons. However, different solitons exhibit identical peak wavelengths for the same modes, indicating that the mode characteristics of different solitons within multiple solitons and harmonic solitons are identical. The findings reveal the individual mode characteristics of 3D solitons and deepen the understanding of their formation mechanisms, advancing the investigations and applications of STML fiber lasers.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":"25 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143758690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Miguel Barona-Ruiz, Laureano Moreno-Pozas, Pablo Ginel-Moreno, Alejandro Ortega-Moñux, José de Oliva-Rubio, Íñigo Molina-Fernández, J. Gonzalo Wangüemert-Pérez, Robert Halir
Several emerging applications of silicon photonics, including sensing, ranging, and optical trapping, require fixed, well-collimated beams that enable interaction with targets placed centimeters away from the chip. Generating such beams without using bulk-optic lenses entails radiating lightwaves with diameters of hundreds of microns directly from the chip. Gratings with sufficiently low strength have so far only been shown in the silicon nitride platform using specialized shallow etch steps; in silicon-on-insulator the implementation becomes much more challenging due to the increased index contrast. Here, the first silicon-on-insulator grating capable of radiating such large beams is reported. Using a fully etched, double-period subwavelength structure, with feature sizes compatible with deep-ultraviolet lithography, a beam diameter in excess of <span data-altimg="/cms/asset/38d443ca-11d4-44aa-9d1b-fa8c6b495eff/lpor202401775-math-0001.png"></span><mjx-container ctxtmenu_counter="2" ctxtmenu_oldtabindex="1" jax="CHTML" role="application" sre-explorer- style="font-size: 103%; position: relative;" tabindex="0"><mjx-math aria-hidden="true" location="graphic/lpor202401775-math-0001.png"><mjx-semantics><mjx-mrow data-semantic-annotation="clearspeak:simple;clearspeak:unit" data-semantic-children="0,2,3" data-semantic-content="4,5" data-semantic- data-semantic-role="implicit" data-semantic-speech="350 mu normal m" data-semantic-type="infixop"><mjx-mn data-semantic-annotation="clearspeak:simple" data-semantic-font="normal" data-semantic- data-semantic-parent="6" data-semantic-role="integer" data-semantic-type="number"><mjx-c></mjx-c><mjx-c></mjx-c><mjx-c></mjx-c></mjx-mn><mjx-mspace data-semantic- data-semantic-operator="infixop," data-semantic-parent="6" data-semantic-role="space" data-semantic-type="operator" style="width: 0.16em;"></mjx-mspace><mjx-mi data-semantic-annotation="clearspeak:simple" data-semantic-font="italic" data-semantic- data-semantic-parent="6" data-semantic-role="greekletter" data-semantic-type="identifier"><mjx-c></mjx-c></mjx-mi><mjx-mo data-semantic-added="true" data-semantic- data-semantic-operator="infixop," data-semantic-parent="6" data-semantic-role="multiplication" data-semantic-type="operator" style="margin-left: 0.056em; margin-right: 0.056em;"><mjx-c></mjx-c></mjx-mo><mjx-mi data-semantic-annotation="clearspeak:simple" data-semantic-font="normal" data-semantic- data-semantic-parent="6" data-semantic-role="latinletter" data-semantic-type="identifier"><mjx-c></mjx-c></mjx-mi></mjx-mrow></mjx-semantics></mjx-math><mjx-assistive-mml display="inline" unselectable="on"><math altimg="urn:x-wiley:18638880:media:lpor202401775:lpor202401775-math-0001" display="inline" location="graphic/lpor202401775-math-0001.png" xmlns="http://www.w3.org/1998/Math/MathML"><semantics><mrow data-semantic-="" data-semantic-annotation="clearspeak:simple;clearspeak:unit" data-semantic-children="0,2,3" data-semantic-content="4,5" data-semantic-role="i
{"title":"Large Beam Size Grating Coupler in Silicon-on-Insulator Using Fully Etched Subwavelength Gratings","authors":"Miguel Barona-Ruiz, Laureano Moreno-Pozas, Pablo Ginel-Moreno, Alejandro Ortega-Moñux, José de Oliva-Rubio, Íñigo Molina-Fernández, J. Gonzalo Wangüemert-Pérez, Robert Halir","doi":"10.1002/lpor.202401775","DOIUrl":"https://doi.org/10.1002/lpor.202401775","url":null,"abstract":"Several emerging applications of silicon photonics, including sensing, ranging, and optical trapping, require fixed, well-collimated beams that enable interaction with targets placed centimeters away from the chip. Generating such beams without using bulk-optic lenses entails radiating lightwaves with diameters of hundreds of microns directly from the chip. Gratings with sufficiently low strength have so far only been shown in the silicon nitride platform using specialized shallow etch steps; in silicon-on-insulator the implementation becomes much more challenging due to the increased index contrast. Here, the first silicon-on-insulator grating capable of radiating such large beams is reported. Using a fully etched, double-period subwavelength structure, with feature sizes compatible with deep-ultraviolet lithography, a beam diameter in excess of <span data-altimg=\"/cms/asset/38d443ca-11d4-44aa-9d1b-fa8c6b495eff/lpor202401775-math-0001.png\"></span><mjx-container ctxtmenu_counter=\"2\" ctxtmenu_oldtabindex=\"1\" jax=\"CHTML\" role=\"application\" sre-explorer- style=\"font-size: 103%; position: relative;\" tabindex=\"0\"><mjx-math aria-hidden=\"true\" location=\"graphic/lpor202401775-math-0001.png\"><mjx-semantics><mjx-mrow data-semantic-annotation=\"clearspeak:simple;clearspeak:unit\" data-semantic-children=\"0,2,3\" data-semantic-content=\"4,5\" data-semantic- data-semantic-role=\"implicit\" data-semantic-speech=\"350 mu normal m\" data-semantic-type=\"infixop\"><mjx-mn data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"normal\" data-semantic- data-semantic-parent=\"6\" data-semantic-role=\"integer\" data-semantic-type=\"number\"><mjx-c></mjx-c><mjx-c></mjx-c><mjx-c></mjx-c></mjx-mn><mjx-mspace data-semantic- data-semantic-operator=\"infixop,\" data-semantic-parent=\"6\" data-semantic-role=\"space\" data-semantic-type=\"operator\" style=\"width: 0.16em;\"></mjx-mspace><mjx-mi data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"italic\" data-semantic- data-semantic-parent=\"6\" data-semantic-role=\"greekletter\" data-semantic-type=\"identifier\"><mjx-c></mjx-c></mjx-mi><mjx-mo data-semantic-added=\"true\" data-semantic- data-semantic-operator=\"infixop,\" data-semantic-parent=\"6\" data-semantic-role=\"multiplication\" data-semantic-type=\"operator\" style=\"margin-left: 0.056em; margin-right: 0.056em;\"><mjx-c></mjx-c></mjx-mo><mjx-mi data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"normal\" data-semantic- data-semantic-parent=\"6\" data-semantic-role=\"latinletter\" data-semantic-type=\"identifier\"><mjx-c></mjx-c></mjx-mi></mjx-mrow></mjx-semantics></mjx-math><mjx-assistive-mml display=\"inline\" unselectable=\"on\"><math altimg=\"urn:x-wiley:18638880:media:lpor202401775:lpor202401775-math-0001\" display=\"inline\" location=\"graphic/lpor202401775-math-0001.png\" xmlns=\"http://www.w3.org/1998/Math/MathML\"><semantics><mrow data-semantic-=\"\" data-semantic-annotation=\"clearspeak:simple;clearspeak:unit\" data-semantic-children=\"0,2,3\" data-semantic-content=\"4,5\" data-semantic-role=\"i","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":"224 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143767128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zekun Shi, Xin Wang, Ziyang Zhang, Pan Wang, Zhi Wang, Yange Liu
The vast applications of vector vortex beams (VVBs) have driven the development of generation devices on various platforms and at different wavelengths, leading to a growing demand for universal optical field characterization methods. Simultaneously, high-speed optical field characterization can be utilized for signal demodulation in information applications. In this paper, a universal and ultra-fast vector mode decomposition (VMD) method based on purely analytical, non-iterative formulas is proposed for the first time. This method requires only the intensity measurements of a few polarization components to achieve a complete 2D electric field characterization of VVBs. By utilizing the conversion relationships between different mode bases, this approach is compatible with various mode types—such as cylindrical vector (CV) and linearly polarized (LP) modes—across fibers, on-chip waveguides, and other platforms. It is not limited by azimuthal or radial mode orders (determined only by detector resolution), and operates over 100 000 times faster than previous neural network methods. This universal and rapid method is expected to facilitate the characterization of vector-structured beams and their practical applications in telecommunications, higher-dimensional quantum information, and beyond.
{"title":"Ultra-fast and Universal Vector Mode Analyzer Based on 4D Jones Vector and Intensity-Only Detection","authors":"Zekun Shi, Xin Wang, Ziyang Zhang, Pan Wang, Zhi Wang, Yange Liu","doi":"10.1002/lpor.202500004","DOIUrl":"https://doi.org/10.1002/lpor.202500004","url":null,"abstract":"The vast applications of vector vortex beams (VVBs) have driven the development of generation devices on various platforms and at different wavelengths, leading to a growing demand for universal optical field characterization methods. Simultaneously, high-speed optical field characterization can be utilized for signal demodulation in information applications. In this paper, a universal and ultra-fast vector mode decomposition (VMD) method based on purely analytical, non-iterative formulas is proposed for the first time. This method requires only the intensity measurements of a few polarization components to achieve a complete 2D electric field characterization of VVBs. By utilizing the conversion relationships between different mode bases, this approach is compatible with various mode types—such as cylindrical vector (CV) and linearly polarized (LP) modes—across fibers, on-chip waveguides, and other platforms. It is not limited by azimuthal or radial mode orders (determined only by detector resolution), and operates over 100 000 times faster than previous neural network methods. This universal and rapid method is expected to facilitate the characterization of vector-structured beams and their practical applications in telecommunications, higher-dimensional quantum information, and beyond.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":"133 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143758118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Baiju Lyu, Yongkang Lyu, Liqi Ma, Muhammad Saleem, Abdur Rahim, Mingyue Li, Xiaoyu Zhang, Muhammad Zahid, Mei Liu
Surface-enhanced Raman spectroscopy (SERS) has emerged as a powerful tool for biological detection and analysis. However, it is confronted with challenges from fluorescence interference. This study develops a CuPc/MoS₂ heterostructure with S-scheme junction through interfacial band alignment. The SERS evaluation of methylene blue (MB) demonstrated a detection limit as low as 10−10 M, which is 23.37-fold higher than that of the pristine components. Meanwhile, a fluorescence quenching fraction of 0.925 is achieved by non-radiative charge recombination, effectively addressing the issue of fluorescence interference and achieving a significant enhancement of SERS signals through the fluorescence quenching of MB molecules. The substrate demonstrates a detection sensitivity of up to 0.611 CFU mL−1 against Escherichia coli (E. coli). Notably, the platform successfully monitored polystyrene nanoplastic (PS-NP)-bacteria interactions, revealing size-dependent membrane disruption mechanisms through flavin adenine dinucleotide (FAD) signal variations. This study establishes a development for non-metallic SERS substrates in environmental monitoring and nanotoxicology research.
{"title":"Fluorescence Quenching SERS Detection: a 2D MoS2 Platform Modified with a Large π-Conjugated Organic Molecule for Bacterial Detection","authors":"Baiju Lyu, Yongkang Lyu, Liqi Ma, Muhammad Saleem, Abdur Rahim, Mingyue Li, Xiaoyu Zhang, Muhammad Zahid, Mei Liu","doi":"10.1002/lpor.202401831","DOIUrl":"https://doi.org/10.1002/lpor.202401831","url":null,"abstract":"Surface-enhanced Raman spectroscopy (SERS) has emerged as a powerful tool for biological detection and analysis. However, it is confronted with challenges from fluorescence interference. This study develops a CuPc/MoS₂ heterostructure with S-scheme junction through interfacial band alignment. The SERS evaluation of methylene blue (MB) demonstrated a detection limit as low as 10<sup>−10</sup> M, which is 23.37-fold higher than that of the pristine components. Meanwhile, a fluorescence quenching fraction of 0.925 is achieved by non-radiative charge recombination, effectively addressing the issue of fluorescence interference and achieving a significant enhancement of SERS signals through the fluorescence quenching of MB molecules. The substrate demonstrates a detection sensitivity of up to 0.611 CFU mL<sup>−1</sup> against Escherichia coli (E. coli). Notably, the platform successfully monitored polystyrene nanoplastic (PS-NP)-bacteria interactions, revealing size-dependent membrane disruption mechanisms through flavin adenine dinucleotide (FAD) signal variations. This study establishes a development for non-metallic SERS substrates in environmental monitoring and nanotoxicology research.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":"57 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143758119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Si Ran Wang, Geng-Bo Wu, Wei Liu, Shao Nan Chen, Zhen Jie Qi, Jun Wei Zhang, Li Jie Wu, Xinxin Gao, Zheng Xing Wang, Jun Yan Dai, Qiang Cheng, Tie Jun Cui
Metasurfaces have garnered significant attention for the ability to manipulate electromagnetic (EM) waves, enabling diverse applications such as beam steering, frequency conversion, and vortex-wave generation. However, achieving complete control of the EM properties such as phase, amplitude, polarization and momentum over multiple frequencies remains a challenge. Here, an asynchronous space-time-coding digital metasurface (ASTCM) is proposed to tackle the challenge. By segmenting the metasurface into distinct partitions and letting them be modulated at different frequencies and operated with different functions, ASTCM facilitates precise and comprehensive manipulations of multi-frequency EM waves, eliminating the need for multiple oscillators and radio-frequency (RF) chains. As proof-of-concept examples, three ASTCM experiments are carried out, including multi-frequency beam steering, construction of wireless communication system, and direction-of-arrival estimation. These experiments concurrently demonstrate the capability of ASTCM in manipulating full EM properties on multifrequency waves in a simple way, showcasing its potential to revolutionize wireless communication, radar, and integrated communication and sensing systems.
{"title":"Multi-Domain Manipulations of Multi-Frequency Waves Based on Asynchronous Space-Time-Coding Digital Metasurface","authors":"Si Ran Wang, Geng-Bo Wu, Wei Liu, Shao Nan Chen, Zhen Jie Qi, Jun Wei Zhang, Li Jie Wu, Xinxin Gao, Zheng Xing Wang, Jun Yan Dai, Qiang Cheng, Tie Jun Cui","doi":"10.1002/lpor.202500184","DOIUrl":"https://doi.org/10.1002/lpor.202500184","url":null,"abstract":"Metasurfaces have garnered significant attention for the ability to manipulate electromagnetic (EM) waves, enabling diverse applications such as beam steering, frequency conversion, and vortex-wave generation. However, achieving complete control of the EM properties such as phase, amplitude, polarization and momentum over multiple frequencies remains a challenge. Here, an asynchronous space-time-coding digital metasurface (ASTCM) is proposed to tackle the challenge. By segmenting the metasurface into distinct partitions and letting them be modulated at different frequencies and operated with different functions, ASTCM facilitates precise and comprehensive manipulations of multi-frequency EM waves, eliminating the need for multiple oscillators and radio-frequency (RF) chains. As proof-of-concept examples, three ASTCM experiments are carried out, including multi-frequency beam steering, construction of wireless communication system, and direction-of-arrival estimation. These experiments concurrently demonstrate the capability of ASTCM in manipulating full EM properties on multifrequency waves in a simple way, showcasing its potential to revolutionize wireless communication, radar, and integrated communication and sensing systems.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":"42 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143758116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lead-free metal halide perovskites and derivatives microcrystals (MCs) have become emerging candidates for X-ray scintillation imaging applications. However, the luminescent properties of micrometric crystals need to be further improved, and the development of flexible scintillation screens utilizing large-scale MCs remains a significant challenge. Here, all-inorganic manganese (Mn)-based perovskite CsMnCl3 MCs are reported by room-temperature solution-synthesized co-precipitation method. Introducing an amount of Group IIB divalent metal cations (i.e., Zn and Cd in this work) into CsMnCl3 MCs greatly increases the photoluminescence quantum yield (PLQY) from 48.2% to 92.3% for CsMnCl3:1.5% Zn MCs (82.5% for CsMnCl3:1%Cd MCs). The CsMnCl3:1.5% Zn MCs feature excellent scintillation performance and achieve a low detection limit of 22.53 nGyair s−1. Furthermore, solvent engineering by adding n-hexane to the mixture of doped CsMnCl3 MCs and polydimethylsiloxane (PDMS) assists in fabricating 100 cm2 large-area uniform scintillation screens. As a result, the spatial resolution of CsMnCl3:1.5%Zn@PDMS achieves 7.6 line pairs (lp) mm−1, which is among the best values of CsMnCl3@PDMS scintillation screens. In addition, high-resolution flexible imaging applications of non-planar objects are achieved. The work offers a promising approach to develop high-performance large-area flexible scintillation screens based on large-size MCs for high-resolution X-ray imaging.
{"title":"Large-Area Stable Flexible X-Ray Scintillation Screens with Group IIB Ions Doped CsMnCl3 Microcrystals","authors":"Wenqing Liang, Huimin Tong, Jingwei Zhu, Xia Hao, Cong Chen, Shengqiang Ren, Min Wu, Shuyu Zhang, Dewei Zhao","doi":"10.1002/lpor.202402306","DOIUrl":"https://doi.org/10.1002/lpor.202402306","url":null,"abstract":"Lead-free metal halide perovskites and derivatives microcrystals (MCs) have become emerging candidates for X-ray scintillation imaging applications. However, the luminescent properties of micrometric crystals need to be further improved, and the development of flexible scintillation screens utilizing large-scale MCs remains a significant challenge. Here, all-inorganic manganese (Mn)-based perovskite CsMnCl<sub>3</sub> MCs are reported by room-temperature solution-synthesized co-precipitation method. Introducing an amount of Group IIB divalent metal cations (i.e., Zn and Cd in this work) into CsMnCl<sub>3</sub> MCs greatly increases the photoluminescence quantum yield (PLQY) from 48.2% to 92.3% for CsMnCl<sub>3</sub>:1.5% Zn MCs (82.5% for CsMnCl<sub>3</sub>:1%Cd MCs). The CsMnCl<sub>3</sub>:1.5% Zn MCs feature excellent scintillation performance and achieve a low detection limit of 22.53 nGy<sub>air</sub> s<sup>−1</sup>. Furthermore, solvent engineering by adding n-hexane to the mixture of doped CsMnCl<sub>3</sub> MCs and polydimethylsiloxane (PDMS) assists in fabricating 100 cm<sup>2</sup> large-area uniform scintillation screens. As a result, the spatial resolution of CsMnCl<sub>3</sub>:1.5%Zn@PDMS achieves 7.6 line pairs (lp) mm<sup>−1</sup>, which is among the best values of CsMnCl<sub>3</sub>@PDMS scintillation screens. In addition, high-resolution flexible imaging applications of non-planar objects are achieved. The work offers a promising approach to develop high-performance large-area flexible scintillation screens based on large-size MCs for high-resolution X-ray imaging.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":"97 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143758117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Creating spike topographies on nickel-based alloys through laser structuring is anticipated to enhance their functionality and improve surface performance. Recent efforts aimed at developing ice-phobic surfaces have primarily focused on introducing spike-like structures; however, the mechanisms underlying the formation of spikes remain elusive. Here, an in situ labeling method is proposed to directly trace the evolution of spike structures at their original sites. This method provides a clear depiction of the evolution process, including the inception of undulating structures, the growth of voids, and the reproduction of voids. The roles of undulating structures and voids in the development of spikes are identified, and the energy modulation effect has been confirmed through experimental results and numerical models. The preparation method offers high stability in fabricating spike topographies on nickel-based alloys, and the protrusion size can be finely tuned by adjusting the pulse energy. Finally, potential applications of the surface covered with spikes are demonstrated. The measured contact angles and sliding angles indicate that the laser-structured surface exhibits good hydrophobic properties, and the surface with larger protrusions demonstrates excellent anti-icing performance. The time required to complete icing on laser-structured surfaces can be up to ≈3.3 times that of the original surface.
{"title":"Femtosecond Laser-Induced Spike Topographies on Nickel-Based Alloys: In Situ Labeling, Growth Mechanism, and Anti-Icing Performance","authors":"Rujia Wang, Chenbin Ma, Jing Lv, Wenwu Zhang, Shuowen Zhang","doi":"10.1002/lpor.202401598","DOIUrl":"https://doi.org/10.1002/lpor.202401598","url":null,"abstract":"Creating spike topographies on nickel-based alloys through laser structuring is anticipated to enhance their functionality and improve surface performance. Recent efforts aimed at developing ice-phobic surfaces have primarily focused on introducing spike-like structures; however, the mechanisms underlying the formation of spikes remain elusive. Here, an in situ labeling method is proposed to directly trace the evolution of spike structures at their original sites. This method provides a clear depiction of the evolution process, including the inception of undulating structures, the growth of voids, and the reproduction of voids. The roles of undulating structures and voids in the development of spikes are identified, and the energy modulation effect has been confirmed through experimental results and numerical models. The preparation method offers high stability in fabricating spike topographies on nickel-based alloys, and the protrusion size can be finely tuned by adjusting the pulse energy. Finally, potential applications of the surface covered with spikes are demonstrated. The measured contact angles and sliding angles indicate that the laser-structured surface exhibits good hydrophobic properties, and the surface with larger protrusions demonstrates excellent anti-icing performance. The time required to complete icing on laser-structured surfaces can be up to ≈3.3 times that of the original surface.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":"56 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143758120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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