Pub Date : 2009-07-06DOI: 10.1109/IPFA.2009.5232589
Ming Li, Jing Zhou, Qiang Chen, W. Kary Chien
Tiny defects were observed by SEM (Scanning Electron Microscopy) on pad surface. In order to identify the root cause, TEM (Transmission Electron Microscopy) and EDX (Energy dispersive X-ray) techniques were used to do failure analysis. The SEM images showed that the tiny surface defects were pits. Higher Cu concentration at pits area was detected compared with normal area based on the EDX data. TEM and EDX analysis showed that the defect could be composed of an Al-Cu (and/or possible pure Cu) core and the halo of aluminum oxide (and/or possible hydroxide). The result can be explained as that the pre-existing Al2Cu (theta phase) particles and the surrounding aluminum metal might act as the electrodes and favored the occurrence of galvanic corrosion during the backend DI water cleaning process or when the wafer was in a moisture environment. In this paper, the mechanism of galvanic corrosion was further discussed based on the TEM data.
{"title":"Characterization of pad surface defect by TEM, SEM and EDX","authors":"Ming Li, Jing Zhou, Qiang Chen, W. Kary Chien","doi":"10.1109/IPFA.2009.5232589","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232589","url":null,"abstract":"Tiny defects were observed by SEM (Scanning Electron Microscopy) on pad surface. In order to identify the root cause, TEM (Transmission Electron Microscopy) and EDX (Energy dispersive X-ray) techniques were used to do failure analysis. The SEM images showed that the tiny surface defects were pits. Higher Cu concentration at pits area was detected compared with normal area based on the EDX data. TEM and EDX analysis showed that the defect could be composed of an Al-Cu (and/or possible pure Cu) core and the halo of aluminum oxide (and/or possible hydroxide). The result can be explained as that the pre-existing Al2Cu (theta phase) particles and the surrounding aluminum metal might act as the electrodes and favored the occurrence of galvanic corrosion during the backend DI water cleaning process or when the wafer was in a moisture environment. In this paper, the mechanism of galvanic corrosion was further discussed based on the TEM data.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133272658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-06DOI: 10.1109/IPFA.2009.5232582
Xiaomei Wang, Xiangdong Xu, Zhiming Wu, Yadong Jiang, Shaowei He
In this paper, vanadium oxide (VOx) thin films were prepared by reactive DC magnetron sputtering under different deposition temperatures. The physical properties and microstructures of VOx thin films were systematically investigated. Results reveal that when the deposition temperature is varied from 200 °C to 390 °C, the square resistance of VOx at room temperature is decreased significantly from 696 KΩ/sq to 0.122 KΩ/sq. The film stress and optical properties were also observed to be varied with the deposition temperature. The resulting adjustment of physical properties is attributed to the difference in both chemical states and crystallinity of VOx. On the base of the special optical, electrical and mechanical properties, the as-prepared VOx films exhibit great potential in various optoelectronic applications.
{"title":"Controlling the growth of VOx films for various optoelectronic applications","authors":"Xiaomei Wang, Xiangdong Xu, Zhiming Wu, Yadong Jiang, Shaowei He","doi":"10.1109/IPFA.2009.5232582","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232582","url":null,"abstract":"In this paper, vanadium oxide (VOx) thin films were prepared by reactive DC magnetron sputtering under different deposition temperatures. The physical properties and microstructures of VOx thin films were systematically investigated. Results reveal that when the deposition temperature is varied from 200 °C to 390 °C, the square resistance of VOx at room temperature is decreased significantly from 696 KΩ/sq to 0.122 KΩ/sq. The film stress and optical properties were also observed to be varied with the deposition temperature. The resulting adjustment of physical properties is attributed to the difference in both chemical states and crystallinity of VOx. On the base of the special optical, electrical and mechanical properties, the as-prepared VOx films exhibit great potential in various optoelectronic applications.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133646871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-06DOI: 10.1109/IPFA.2009.5232566
D. Isakov, B. Tan, J. Phang, Y. Yeo, A. Tio, Y. Zhang, T. Geinzer, L. Balk
In this paper, the application of scanning near-field photon emission microscopy for imaging photon emission sites is demonstrated. Photon emissions generated by a Fin-FET test structure with one metallization layer are imaged with spatial resolution of 50 nm using scattering dialectic probe. The potential applications and limitations of the technique are discussed.
{"title":"Applications of scanning near-field photon emission microscopy","authors":"D. Isakov, B. Tan, J. Phang, Y. Yeo, A. Tio, Y. Zhang, T. Geinzer, L. Balk","doi":"10.1109/IPFA.2009.5232566","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232566","url":null,"abstract":"In this paper, the application of scanning near-field photon emission microscopy for imaging photon emission sites is demonstrated. Photon emissions generated by a Fin-FET test structure with one metallization layer are imaged with spatial resolution of 50 nm using scattering dialectic probe. The potential applications and limitations of the technique are discussed.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133693892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-06DOI: 10.1109/IPFA.2009.5232560
H. Hsu, L. Chu, W. Shieh, M. Weng, F. R. Hsu
Moisture properties such as moisture diffusivity and hygroscopic swelling have been carefully investigated for polymeric materials used on the MEMS-based pressure sensor. An improved TMA/TGA integrated method is used to characterize the hygroscopic swelling property. An analytical moisture diffusion solution is proposed to determine the moisture distribution and consequent hygroscopic induced strain as well as stress. By applying Fick's second law of diffusion, the “thermal wetness” analogous technique is applied to solve moisture absorption/desorption models. The analytical expression for total expansion strain due to hygro-thermo-mechanical coupled effect is implemented using finite element software ANSYS. Finite element predictions reveal the significance of contribution of hygroswelling induced effective stress/strain. Reliability analysis and hygro-thermo-mechanical design for a MEMS-based pressure sensor are performed in accordance with JEDEC preconditioning standard JESD22-A120. A series of comprehensive experimental works and parametric studies were conducted in this paper.
{"title":"Reliability analysis and hygro-thermo-mechanical design for MEMS-based pressure sensor","authors":"H. Hsu, L. Chu, W. Shieh, M. Weng, F. R. Hsu","doi":"10.1109/IPFA.2009.5232560","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232560","url":null,"abstract":"Moisture properties such as moisture diffusivity and hygroscopic swelling have been carefully investigated for polymeric materials used on the MEMS-based pressure sensor. An improved TMA/TGA integrated method is used to characterize the hygroscopic swelling property. An analytical moisture diffusion solution is proposed to determine the moisture distribution and consequent hygroscopic induced strain as well as stress. By applying Fick's second law of diffusion, the “thermal wetness” analogous technique is applied to solve moisture absorption/desorption models. The analytical expression for total expansion strain due to hygro-thermo-mechanical coupled effect is implemented using finite element software ANSYS. Finite element predictions reveal the significance of contribution of hygroswelling induced effective stress/strain. Reliability analysis and hygro-thermo-mechanical design for a MEMS-based pressure sensor are performed in accordance with JEDEC preconditioning standard JESD22-A120. A series of comprehensive experimental works and parametric studies were conducted in this paper.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132687821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-06DOI: 10.1109/IPFA.2009.5232604
E. Sourty, J. Stanley, Bert Freitag
Strain engineering has become an important tool to allow the semiconductor industry to meet roadmap requirements for device performance in the face of limits to device scaling. In addition, strain and/or lattice distortion through chemistry or mechanical stress, can have significant effect on mechanical, electrical and magnetic properties in a wide range of materials. Therefore, determination of strain in a processed, failed or natural sample will have ramifications in almost all fields of material science and solid state physics. Currently, only transmission electron microscopy (TEM) has proven capable of measuring such buried strains at the required spatial resolutions. This contribution presents an automated methodology to measure strain with high accuracy, high reproducibility, and high spatial resolution yet without the need for elaborate experimental setup or highly trained operator. The methodology is first put in perspective and compared to other available methodologies. Important aspects of the experimental setup are then detailed as well as the specificity of the methodology and used algorithm. Three different cases are described: SiGe multilayer, strained transistor, and indented sapphire and the strain measured discussed.
{"title":"Using STEM with quasi-parallel illumination and an automated peak-finding routine for strain analysis at the nanometre scale","authors":"E. Sourty, J. Stanley, Bert Freitag","doi":"10.1109/IPFA.2009.5232604","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232604","url":null,"abstract":"Strain engineering has become an important tool to allow the semiconductor industry to meet roadmap requirements for device performance in the face of limits to device scaling. In addition, strain and/or lattice distortion through chemistry or mechanical stress, can have significant effect on mechanical, electrical and magnetic properties in a wide range of materials. Therefore, determination of strain in a processed, failed or natural sample will have ramifications in almost all fields of material science and solid state physics. Currently, only transmission electron microscopy (TEM) has proven capable of measuring such buried strains at the required spatial resolutions. This contribution presents an automated methodology to measure strain with high accuracy, high reproducibility, and high spatial resolution yet without the need for elaborate experimental setup or highly trained operator. The methodology is first put in perspective and compared to other available methodologies. Important aspects of the experimental setup are then detailed as well as the specificity of the methodology and used algorithm. Three different cases are described: SiGe multilayer, strained transistor, and indented sapphire and the strain measured discussed.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"318 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122433129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-06DOI: 10.1109/IPFA.2009.5232647
Weihai Fan, Shunwang Chiang, Stephen Xie, Shaha Hu
We investigated the overlay effect of TOW (Tunnel Oxide Window) and TIM (Tunneling Implant) on the reliability of EEPROM product. Normally soft failure could be observed on the zero time state devices. The two key reliability indices for non-volatile memory are cycling and data retention. These reliability performances are impacted by the TIM/TOW overlay even with the more strict pre-screening method had been applied due to early failure screening. In this paper a failure model was proposed to explain the failure mechanism. The marginal reliability performance and the faster device degradation during write/ erase cycling or baking could result from the overlay issue of TOW and TIM.
{"title":"Reliability concern induced by TOW and TIM overlay issue in EEPROM","authors":"Weihai Fan, Shunwang Chiang, Stephen Xie, Shaha Hu","doi":"10.1109/IPFA.2009.5232647","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232647","url":null,"abstract":"We investigated the overlay effect of TOW (Tunnel Oxide Window) and TIM (Tunneling Implant) on the reliability of EEPROM product. Normally soft failure could be observed on the zero time state devices. The two key reliability indices for non-volatile memory are cycling and data retention. These reliability performances are impacted by the TIM/TOW overlay even with the more strict pre-screening method had been applied due to early failure screening. In this paper a failure model was proposed to explain the failure mechanism. The marginal reliability performance and the faster device degradation during write/ erase cycling or baking could result from the overlay issue of TOW and TIM.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117183946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-06DOI: 10.1109/IPFA.2009.5232721
C. Du, Jing Zhao, Yunfei Du, Fang Chen, H. Zhao
The components and characteristics of flux used for Pb-free interconnection are discussed. Applying physical chemistry principles, the decisive factors, activation capability and limit of the flux's activity are analyzed. The results show that special flux must be used in Pb-free interconnections, and acting capability of flux mainly depends on the selected activator, and the built-up activator is an effective way to elevate activity. Flux with high activity can significantly enhance σs-f and reduce σl-f, but it can not reduce σs-l effectively. It is a basic reason why activity is difficult to exert. Reducing the fast growth of inter-metallic compound (IMC) at the interface is a vital measure to improve acting capability of flux.
{"title":"Acting capability of flux for Pb-free interconnection in electronics assembly","authors":"C. Du, Jing Zhao, Yunfei Du, Fang Chen, H. Zhao","doi":"10.1109/IPFA.2009.5232721","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232721","url":null,"abstract":"The components and characteristics of flux used for Pb-free interconnection are discussed. Applying physical chemistry principles, the decisive factors, activation capability and limit of the flux's activity are analyzed. The results show that special flux must be used in Pb-free interconnections, and acting capability of flux mainly depends on the selected activator, and the built-up activator is an effective way to elevate activity. Flux with high activity can significantly enhance σs-f and reduce σl-f, but it can not reduce σs-l effectively. It is a basic reason why activity is difficult to exert. Reducing the fast growth of inter-metallic compound (IMC) at the interface is a vital measure to improve acting capability of flux.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121081645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-06DOI: 10.1109/IPFA.2009.5232567
Y.F. Wang, W. Wu, P. Li, L. Zhang, Z. Ma
Cooling was a very effective way to eliminate the bow of Silicon solar cell. In this paper, by a series of experiments, we found that during the cooling, the electrical characteristics and internal or external quantum efficiency nearly stayed the same, and the lifetime of minority carriers as well. The cooling was a available way to apply in industrial process.
{"title":"Influence of cooling on the performance of Silicon solar cells","authors":"Y.F. Wang, W. Wu, P. Li, L. Zhang, Z. Ma","doi":"10.1109/IPFA.2009.5232567","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232567","url":null,"abstract":"Cooling was a very effective way to eliminate the bow of Silicon solar cell. In this paper, by a series of experiments, we found that during the cooling, the electrical characteristics and internal or external quantum efficiency nearly stayed the same, and the lifetime of minority carriers as well. The cooling was a available way to apply in industrial process.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121141182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-06DOI: 10.1109/IPFA.2009.5232625
Yujuan He, Y. En, Hongwei Luo, Xiaoqi He
The irradiation response of a DC-DC power converter was studied. During the test, the characteristic parameter of DC-DC power converter such as input current and output voltage increased slowly with empty load, and DC-DC power converter was unsteady and the characteristic parameter was strongly influenced by the total-dose when fully loaded. It was indicated that failure of DC-DC converter was due to the source and drain of VDMOSFET fused together because of over power.
{"title":"The irradiation effect and failure analysis of DC-DC power converter","authors":"Yujuan He, Y. En, Hongwei Luo, Xiaoqi He","doi":"10.1109/IPFA.2009.5232625","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232625","url":null,"abstract":"The irradiation response of a DC-DC power converter was studied. During the test, the characteristic parameter of DC-DC power converter such as input current and output voltage increased slowly with empty load, and DC-DC power converter was unsteady and the characteristic parameter was strongly influenced by the total-dose when fully loaded. It was indicated that failure of DC-DC converter was due to the source and drain of VDMOSFET fused together because of over power.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116236735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-06DOI: 10.1109/IPFA.2009.5232644
Ting-Pin Yang, Guosheng Sun, Y. Zhao, Jin Ning, Xingfang Liu, Lei Wang, Wanshun Zhao, Yiping Zeng, Jinmin Li
A micromachined acceleration sensor for high-g detection is presented, which introduces silicon carbide as a mechanical material. The sensor structure itself consists of a fixed capacitor and a changeable one whose top plate moves perpendicular to the chip surface. The external acceleration can be obtained by measuring the change of the capacitance. Conventional surface micro-machining technologies are enough for the fabrication of the sensor. A basic theoretical model is given out, which is then used to calculate the vital performance parameters of the sensor. The theoretical measuring range is about 0–110kG. In addition, two theoretical results are compared with the simulation ones obtained by ANSYS.
{"title":"A high-G silicon carbide vertical capacitive micromachined accelerometer","authors":"Ting-Pin Yang, Guosheng Sun, Y. Zhao, Jin Ning, Xingfang Liu, Lei Wang, Wanshun Zhao, Yiping Zeng, Jinmin Li","doi":"10.1109/IPFA.2009.5232644","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232644","url":null,"abstract":"A micromachined acceleration sensor for high-g detection is presented, which introduces silicon carbide as a mechanical material. The sensor structure itself consists of a fixed capacitor and a changeable one whose top plate moves perpendicular to the chip surface. The external acceleration can be obtained by measuring the change of the capacitance. Conventional surface micro-machining technologies are enough for the fabrication of the sensor. A basic theoretical model is given out, which is then used to calculate the vital performance parameters of the sensor. The theoretical measuring range is about 0–110kG. In addition, two theoretical results are compared with the simulation ones obtained by ANSYS.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116500913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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