Pub Date : 2009-07-06DOI: 10.1109/IPFA.2009.5232707
J. Phang, S. Goh, A. Quah, C. Chua, L. S. Koh, S.H. Tan, W. Chua
Scanning optical microscopy techniques are effective for optical fault localization of failures that are sensitive to thermal stimulation. In this paper, the recent developments in resolution and sensitivity enhancements that allow these techniques to be used with advanced technology nodes are described. The enhancement methods include refractive solid immersion lens technology, dc-coupling of the laser induced detection system and laser pulsing with signal integration algorithm. The combination of these enhanced scanning optical microscopy techniques and refractive solid immersion lens technology has brought about significantly better localization precision and sensitivity.
{"title":"Resolution and sensitivity enhancements of scanning optical microscopy techniques for integrated circuit failure analysis","authors":"J. Phang, S. Goh, A. Quah, C. Chua, L. S. Koh, S.H. Tan, W. Chua","doi":"10.1109/IPFA.2009.5232707","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232707","url":null,"abstract":"Scanning optical microscopy techniques are effective for optical fault localization of failures that are sensitive to thermal stimulation. In this paper, the recent developments in resolution and sensitivity enhancements that allow these techniques to be used with advanced technology nodes are described. The enhancement methods include refractive solid immersion lens technology, dc-coupling of the laser induced detection system and laser pulsing with signal integration algorithm. The combination of these enhanced scanning optical microscopy techniques and refractive solid immersion lens technology has brought about significantly better localization precision and sensitivity.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"135 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115093382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-06DOI: 10.1109/IPFA.2009.5232621
C. Chai, Yang Yang, Bing Zhang, R. Ding, Peng Leng, Xingrong Ren
Energy injection effect and mechanism of silicon bipolar low noise amplifier (LNA) through the injection of a special signal are experimentally studied in this paper. The experimental results show that the passive resistor is also one of the weaknesses of silicon LNAs in addition to the active device. Based on the low noise design rule of LNA, a wider passive resistor design is particularly useful not only in reducing the noise but also in improving the reliability of LNA whenever possible. Except for the gain characteristics, the experimental results indicate that the noise figure of silicon bipolar LNA is also one of the sensitive parameters to energy injection.
{"title":"The effect of passive component damage of an integrated si bipolar low-noise amplifier under energy-injection","authors":"C. Chai, Yang Yang, Bing Zhang, R. Ding, Peng Leng, Xingrong Ren","doi":"10.1109/IPFA.2009.5232621","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232621","url":null,"abstract":"Energy injection effect and mechanism of silicon bipolar low noise amplifier (LNA) through the injection of a special signal are experimentally studied in this paper. The experimental results show that the passive resistor is also one of the weaknesses of silicon LNAs in addition to the active device. Based on the low noise design rule of LNA, a wider passive resistor design is particularly useful not only in reducing the noise but also in improving the reliability of LNA whenever possible. Except for the gain characteristics, the experimental results indicate that the noise figure of silicon bipolar LNA is also one of the sensitive parameters to energy injection.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123627036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-06DOI: 10.1109/IPFA.2009.5232702
M. Ker, Chih-Kuo Huang, Yuan-Wen Hsiao, Y. Hsieh
The electrostatic discharge (ESD) transient currents and failure analysis (FA) between chip-level and board-level charged-device-model (CDM) ESD tests are investigated in this work. The discharging current waveforms of three different printed circuit boards (PCBs) are characterized first. Then, the chip-level and board-level CDM ESD tests are performed to an ESD-protected dummy NMOS and a high-speed receiver front-end circuit, respectively. Scanning electron microscope (SEM) failure pictures show that the board-level CDM ESD test causes much severer failure than that caused by the chip-level CDM ESD test.
{"title":"Chip-level and board-level CDM ESD tests on IC products","authors":"M. Ker, Chih-Kuo Huang, Yuan-Wen Hsiao, Y. Hsieh","doi":"10.1109/IPFA.2009.5232702","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232702","url":null,"abstract":"The electrostatic discharge (ESD) transient currents and failure analysis (FA) between chip-level and board-level charged-device-model (CDM) ESD tests are investigated in this work. The discharging current waveforms of three different printed circuit boards (PCBs) are characterized first. Then, the chip-level and board-level CDM ESD tests are performed to an ESD-protected dummy NMOS and a high-speed receiver front-end circuit, respectively. Scanning electron microscope (SEM) failure pictures show that the board-level CDM ESD test causes much severer failure than that caused by the chip-level CDM ESD test.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129461296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The structure of hydrogenated amorphous silicon (a-Si:H) thin films embedded with nano-crystal grains deposited by conventional radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) through decomposition of silane diluted with argon has been studied by X-ray diffraction (XRD), Fourier transform infrared (FTIR) and Raman spectroscopy. It is observed that argon as dilution gas plays a significant role in the growth of nano-crystal grains and amorphous network in a-Si:H thin films. The structural variation of the thin films with different dilution ratios suggests that changing of plasma conditions in the chamber leads to the nanocrystallizing of the thin films. The nanocrystallization process initiating at a relatively low dilution ratio has been observed. Moreover, a positive effect of argon dilution on the nanocrystallization has also been observed. The structural changes studied under argon dilution are explained by a proposed model based on the energy exchange between argon plasma constituted of Ar* and A+ radicals and the growth region of the thin films.
{"title":"Deposition of a-Si:H thin films embedded with nano-crystalline through dilution of argon","authors":"Zhi Li, Wei Li, Haihong Cai, Yuguang Gong, Yadong Jiang","doi":"10.1109/IPFA.2009.5232581","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232581","url":null,"abstract":"The structure of hydrogenated amorphous silicon (a-Si:H) thin films embedded with nano-crystal grains deposited by conventional radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) through decomposition of silane diluted with argon has been studied by X-ray diffraction (XRD), Fourier transform infrared (FTIR) and Raman spectroscopy. It is observed that argon as dilution gas plays a significant role in the growth of nano-crystal grains and amorphous network in a-Si:H thin films. The structural variation of the thin films with different dilution ratios suggests that changing of plasma conditions in the chamber leads to the nanocrystallizing of the thin films. The nanocrystallization process initiating at a relatively low dilution ratio has been observed. Moreover, a positive effect of argon dilution on the nanocrystallization has also been observed. The structural changes studied under argon dilution are explained by a proposed model based on the energy exchange between argon plasma constituted of Ar* and A+ radicals and the growth region of the thin films.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"2010 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127343931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-06DOI: 10.1109/IPFA.2009.5232659
H.E. Lwin, V. Narang, J. Chin
It has been a challenge for failure analysts to isolate non-visible defects due to the limitations of failure analysis (FA) tools and techniques. Sub-nano defects are often difficult to detect, particularly in highly complex integrated circuit devices. This paper emphasizes the growing importance of nano-probing and its capability to detect subtle defects like nano-sized stringer shorts, which previously went undetected. Successful case studies involving the use of nano-probing techniques to help isolate subtle defects (i.e., those that cause device failure) will be discussed.
{"title":"Root cause identification of subtle filament shorts in microprocessors using nano-probing","authors":"H.E. Lwin, V. Narang, J. Chin","doi":"10.1109/IPFA.2009.5232659","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232659","url":null,"abstract":"It has been a challenge for failure analysts to isolate non-visible defects due to the limitations of failure analysis (FA) tools and techniques. Sub-nano defects are often difficult to detect, particularly in highly complex integrated circuit devices. This paper emphasizes the growing importance of nano-probing and its capability to detect subtle defects like nano-sized stringer shorts, which previously went undetected. Successful case studies involving the use of nano-probing techniques to help isolate subtle defects (i.e., those that cause device failure) will be discussed.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"158 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127507113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-06DOI: 10.1109/IPFA.2009.5232652
L. Chen
Due to their influence on the mechanical properties, residual stresses in thin films have become an important topic in materials science. The elastic constants are required to determine the residual stresses using X-ray diffraction method. The elastic constants of Cu thin films with ideal fibre textures were calculated using the Voigt, Reuss and Hill model in the present work. The results show that the elastic constants are strongly dependent on their textures. When textures exist within Cu thin films, the matrix of the elastic constants converted from cubic symmetry to hexagonal symmetry. In order to analyze the effect of the textures on the elastic constants of Cu thin films quantitatively, the relationship between the elastic constants and textures was derived by the orientation distribution function.
{"title":"Effect of textures on elastic constants of Cu thin films","authors":"L. Chen","doi":"10.1109/IPFA.2009.5232652","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232652","url":null,"abstract":"Due to their influence on the mechanical properties, residual stresses in thin films have become an important topic in materials science. The elastic constants are required to determine the residual stresses using X-ray diffraction method. The elastic constants of Cu thin films with ideal fibre textures were calculated using the Voigt, Reuss and Hill model in the present work. The results show that the elastic constants are strongly dependent on their textures. When textures exist within Cu thin films, the matrix of the elastic constants converted from cubic symmetry to hexagonal symmetry. In order to analyze the effect of the textures on the elastic constants of Cu thin films quantitatively, the relationship between the elastic constants and textures was derived by the orientation distribution function.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130222515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-06DOI: 10.1109/IPFA.2009.5232606
Lu Wang, Shiwei Feng, Chunsheng Guo, Guangchen Zhang
This paper analyzes the degradation of the electrical, optical and thermal characteristics of the light-emitting diodes (LEDs). Two types of LEDs which are defined as sample A and sample B are tested. Their electrical, optical and thermal characteristics have been continuously monitored during the test. The results of our analysis demonstrate that ohmic contacts and resistivity of bulk are stable over stress time; the die attach materials of sample B get worse, but the active layer is better than sample A; the depletion region of sample A is getting worse and sample B is stable. The analysis above offers a new method to find which part degrades seriously.
{"title":"Analysis of degradation of GaN-Based light-emitting diodes","authors":"Lu Wang, Shiwei Feng, Chunsheng Guo, Guangchen Zhang","doi":"10.1109/IPFA.2009.5232606","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232606","url":null,"abstract":"This paper analyzes the degradation of the electrical, optical and thermal characteristics of the light-emitting diodes (LEDs). Two types of LEDs which are defined as sample A and sample B are tested. Their electrical, optical and thermal characteristics have been continuously monitored during the test. The results of our analysis demonstrate that ohmic contacts and resistivity of bulk are stable over stress time; the die attach materials of sample B get worse, but the active layer is better than sample A; the depletion region of sample A is getting worse and sample B is stable. The analysis above offers a new method to find which part degrades seriously.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130512269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-06DOI: 10.1109/IPFA.2009.5232683
T. Das, C. Mahata, G. Dalapati, D. Chi, G. Sutradhar, P. K. Bose, C. Maiti
Reliability characteristics of ZrO2 gate dielectric films on p-GaAs with ultrathin Silicon (Si) interfacial passivated layer have been investigated. Results of a systematic study on the impacts of post deposition annealing (PDA) on the physical and electrical properties of RF-sputtered ZrO2 dielectric layers on Si-passivated p-GaAs substrates are reported. The electrical characteristics have been performed using C-V, I-V, CVS and CCS to understand the reliability and the interface trapping behaviour of TaN/ZrO2/Si/p-GaAs gate stack. Low positive charge trapping after N2 annealing was observed for different constant voltage and current stressing conditions.
{"title":"Reliability and charge trapping properties of ZrO2 gate dielectric on Si passivated p-GaAs","authors":"T. Das, C. Mahata, G. Dalapati, D. Chi, G. Sutradhar, P. K. Bose, C. Maiti","doi":"10.1109/IPFA.2009.5232683","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232683","url":null,"abstract":"Reliability characteristics of ZrO2 gate dielectric films on p-GaAs with ultrathin Silicon (Si) interfacial passivated layer have been investigated. Results of a systematic study on the impacts of post deposition annealing (PDA) on the physical and electrical properties of RF-sputtered ZrO2 dielectric layers on Si-passivated p-GaAs substrates are reported. The electrical characteristics have been performed using C-V, I-V, CVS and CCS to understand the reliability and the interface trapping behaviour of TaN/ZrO2/Si/p-GaAs gate stack. Low positive charge trapping after N2 annealing was observed for different constant voltage and current stressing conditions.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129266623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-06DOI: 10.1109/IPFA.2009.5232610
Jian Lin, Y. Lei, Haiyan Zhao, Zhong-wei Wu, Li Lu
In SMT, the investigation on solder joint's failure is always very important. Thermal fatigue is the main failure form for solder joint in SMT. In this paper the failure process of solder joint in SMT was investigated by both electrical resistance measurement method and crack observation method together. The characteristics of electrical resistance value variation of lead-tin and lead-free solder (SAC305) joint during thermal fatigue test were obtained. And at the same time the crack propagation in solder joint was observed. According to this, the failure rules of lead-tin and lead-free solder joint were compared. And by FEM, the relationship between electrical resistance value variation and crack propagation of solder joint during thermal fatigue test was studied, through which an criterion based on electrical resistance value variation for solder joint's failure during thermal fatigue test could be obtained from experience. It was shown from experimental results that the lead-free solder (SAC305) joint had a higher resistibility from thermal fatigue than the traditional lead-tin eutectic solder joint. And the criterion based on electrical resistance value variation was built up from the experimental and simulation results.
{"title":"Investigation on failure behaviour of solder joint during thermal fatigue","authors":"Jian Lin, Y. Lei, Haiyan Zhao, Zhong-wei Wu, Li Lu","doi":"10.1109/IPFA.2009.5232610","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232610","url":null,"abstract":"In SMT, the investigation on solder joint's failure is always very important. Thermal fatigue is the main failure form for solder joint in SMT. In this paper the failure process of solder joint in SMT was investigated by both electrical resistance measurement method and crack observation method together. The characteristics of electrical resistance value variation of lead-tin and lead-free solder (SAC305) joint during thermal fatigue test were obtained. And at the same time the crack propagation in solder joint was observed. According to this, the failure rules of lead-tin and lead-free solder joint were compared. And by FEM, the relationship between electrical resistance value variation and crack propagation of solder joint during thermal fatigue test was studied, through which an criterion based on electrical resistance value variation for solder joint's failure during thermal fatigue test could be obtained from experience. It was shown from experimental results that the lead-free solder (SAC305) joint had a higher resistibility from thermal fatigue than the traditional lead-tin eutectic solder joint. And the criterion based on electrical resistance value variation was built up from the experimental and simulation results.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129278727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-06DOI: 10.1109/IPFA.2009.5232674
J. Yuan, J. Ma, C. Hsu, W. Yeh
Channel hot-electron degradations on strained MOSFETs are examined experimentally. The stressed model parameters are used in SpectreRF simulation to investigate the impact of stress time on dual-band power amplifier and mixer-LNA performances. Electrical stress decreases power-added efficiency of dual-band PA and increases noise figure of integrated mixer-low noise amplifier.
{"title":"Hot electron stress effect on dual-band power amplifier and integrated mixer-lna design for reliability","authors":"J. Yuan, J. Ma, C. Hsu, W. Yeh","doi":"10.1109/IPFA.2009.5232674","DOIUrl":"https://doi.org/10.1109/IPFA.2009.5232674","url":null,"abstract":"Channel hot-electron degradations on strained MOSFETs are examined experimentally. The stressed model parameters are used in SpectreRF simulation to investigate the impact of stress time on dual-band power amplifier and mixer-LNA performances. Electrical stress decreases power-added efficiency of dual-band PA and increases noise figure of integrated mixer-low noise amplifier.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125433021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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