V. Molodkin, V. Storizhko, V. Kladko, V. Lizunov, A. I. Nizkova, A. Gudimenko, S. I. Olikhovskii, M. G. Tolmachev, S. V. Dmitriev, I. I. Demchyk, E.I. Bogdanov, B. I. Hinko
Generalization of the methods for the purposeful influence of the interrelated variations inherent to different experimental conditions on changes in the selectivity of the sensitivity of the azimuthal dependence of the total integrated intensity of dynamical diffraction to various types of defects in single crystals has been carried out. As a result, the improved phase-variation methods with additionally increased sensitivity and informativity of non-destructive structural diagnostics aimed at multi-parametrical single crystal systems have been developed.
{"title":"Integrated dynamical phase-variation diffracto-metry of single crystals with defects of three and more types","authors":"V. Molodkin, V. Storizhko, V. Kladko, V. Lizunov, A. I. Nizkova, A. Gudimenko, S. I. Olikhovskii, M. G. Tolmachev, S. V. Dmitriev, I. I. Demchyk, E.I. Bogdanov, B. I. Hinko","doi":"10.15407/spqeo26.01.017","DOIUrl":"https://doi.org/10.15407/spqeo26.01.017","url":null,"abstract":"Generalization of the methods for the purposeful influence of the interrelated variations inherent to different experimental conditions on changes in the selectivity of the sensitivity of the azimuthal dependence of the total integrated intensity of dynamical diffraction to various types of defects in single crystals has been carried out. As a result, the improved phase-variation methods with additionally increased sensitivity and informativity of non-destructive structural diagnostics aimed at multi-parametrical single crystal systems have been developed.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"12 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76303159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
L. Kupchenko, A. S. Rybiak, О.А. Goorin, A.P. Hurin, А.V. Ponomar, O. Biesova
The article deals with the experimental study of the compensation method for atmospheric attenuation of laser radiation in active electro-optical remote sensing systems with dynamic spectral processing of optical signals that provides an increase of target image contrast. The compensation method for atmospheric attenuation of laser radiation in active electro-optical systems consists in forming the spectral intensity of the probing radiation not only on the basis of a priori data on the spectral features of the reflecting surfaces of the target and the background, but also taking into account the spectral transmittance of the optical radiation propagation medium. The experimental setup has been developed, in which the source of radiation in the transmitting part of the electro- optical system is three semiconductor lasers operating in the ranges of the red, green and blue parts of the spectrum. Absorption light filters were used in the experiment as elements simulating the spectral properties of the reflecting surfaces of the target and background. The cuvettes with a liquid absorbing optical radiation were used as elements simulating atmospheric attenuation.
{"title":"Experimental study of the compensation method for atmospheric attenuation of probing laser radiation in active electro-optical systems that provide an increase of target image contrast","authors":"L. Kupchenko, A. S. Rybiak, О.А. Goorin, A.P. Hurin, А.V. Ponomar, O. Biesova","doi":"10.15407/spqeo26.01.105","DOIUrl":"https://doi.org/10.15407/spqeo26.01.105","url":null,"abstract":"The article deals with the experimental study of the compensation method for atmospheric attenuation of laser radiation in active electro-optical remote sensing systems with dynamic spectral processing of optical signals that provides an increase of target image contrast. The compensation method for atmospheric attenuation of laser radiation in active electro-optical systems consists in forming the spectral intensity of the probing radiation not only on the basis of a priori data on the spectral features of the reflecting surfaces of the target and the background, but also taking into account the spectral transmittance of the optical radiation propagation medium. The experimental setup has been developed, in which the source of radiation in the transmitting part of the electro- optical system is three semiconductor lasers operating in the ranges of the red, green and blue parts of the spectrum. Absorption light filters were used in the experiment as elements simulating the spectral properties of the reflecting surfaces of the target and background. The cuvettes with a liquid absorbing optical radiation were used as elements simulating atmospheric attenuation.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"100 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78532281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The features of generation of electromagnetic radiation by semiconductor crystals in crossed electric and magnetic fields have been analyzed. Analytical relations for calculating the power of cyclotron radiation have been given. The obtained results are of interest for the purposes of obtaining the sources of electromagnetic radiation in the terahertz frequency range.
{"title":"Electromagnetic radiation of semiconductor crystals in crossed electric and magnetic fields","authors":"G. Milenin, R. Redko","doi":"10.15407/spqeo26.01.025","DOIUrl":"https://doi.org/10.15407/spqeo26.01.025","url":null,"abstract":"The features of generation of electromagnetic radiation by semiconductor crystals in crossed electric and magnetic fields have been analyzed. Analytical relations for calculating the power of cyclotron radiation have been given. The obtained results are of interest for the purposes of obtaining the sources of electromagnetic radiation in the terahertz frequency range.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"68 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73562706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Yukhymchuk, V. M. Rubish, V. Dzhagan, O. Hreshchuk, O. Isaieva, N. Mazur, M. Durkot, A. Kryuchyn, V. Kyrylenko, V. M. Novichenko, V.V. Kremenytskyi, Z. Maksimenko, M. Valakh
The effect of plasmonic nanostructures (NSs) on the Raman spectra and underlying structural changes in thin chalcogenide films is investigated. Several tens of nanometers thick As 2 S 3 and Se films were deposited by thermal sputtering on glass and surface-enhanced Raman spectroscopy (SERS) substrates based on gold nanostructures for comparison. The films on glass were practically not detectable by the Raman spectroscopy. Using gold NSs as the substrates enabled reliable registration of the Raman spectra of both the As 2 S 3 and Se films. The registered Raman spectra contained all the features usually present in the films with the thicknesses ~1 μm or more. Based on our analysis of the spectra obtained at different excitation wavelengths, we may conclude that the SERS chemical mechanism makes the main contribution to the enhancement of the Raman signal from chalcogenide films. Adjustment of the parameters of SERS substrates to tune their plasmon band position in resonance with the excitation laser radiation enables increasing the plasmonic enhancement contribution. Besides the effect of enhancement, localized plasmon resonance in the gold NSs causes local heating of the chalcogenide film around them leading to local structural transformations, which can be controlled using the Raman spectra.
{"title":"Surface-enhanced Raman scattering of As2S3 and Se thin films formed on Au nano-structures","authors":"V. Yukhymchuk, V. M. Rubish, V. Dzhagan, O. Hreshchuk, O. Isaieva, N. Mazur, M. Durkot, A. Kryuchyn, V. Kyrylenko, V. M. Novichenko, V.V. Kremenytskyi, Z. Maksimenko, M. Valakh","doi":"10.15407/spqeo26.01.049","DOIUrl":"https://doi.org/10.15407/spqeo26.01.049","url":null,"abstract":"The effect of plasmonic nanostructures (NSs) on the Raman spectra and underlying structural changes in thin chalcogenide films is investigated. Several tens of nanometers thick As 2 S 3 and Se films were deposited by thermal sputtering on glass and surface-enhanced Raman spectroscopy (SERS) substrates based on gold nanostructures for comparison. The films on glass were practically not detectable by the Raman spectroscopy. Using gold NSs as the substrates enabled reliable registration of the Raman spectra of both the As 2 S 3 and Se films. The registered Raman spectra contained all the features usually present in the films with the thicknesses ~1 μm or more. Based on our analysis of the spectra obtained at different excitation wavelengths, we may conclude that the SERS chemical mechanism makes the main contribution to the enhancement of the Raman signal from chalcogenide films. Adjustment of the parameters of SERS substrates to tune their plasmon band position in resonance with the excitation laser radiation enables increasing the plasmonic enhancement contribution. Besides the effect of enhancement, localized plasmon resonance in the gold NSs causes local heating of the chalcogenide film around them leading to local structural transformations, which can be controlled using the Raman spectra.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"49 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90831264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Michailovska, I. Indutnyi, P. Shepeliavyi, M. Sopinskyy, V. Dan’ko, V. Yukhymchuk
ncs-Si–SiO x :Sm structures formed by high-temperature air annealing of the SiO x films doped with samarium during thermal co-evaporation in vacuum of silicon monoxide and metallic Sm was studied. By measuring the spectra of photoluminescence (PL), it has been shown that doping of SiO x films with Sm stimulates their decomposition into Si and SiO 2 , and also reduces the transition temperature of silicon nanoparticle from the amorphous state to the crystalline one. With an increase in the impurity content up to 2 wt.%, along with the ncs-Si luminescence, the PL spectrum exhibits emission bands of Sm 3+ and Sm 2+ ions, which do not appear at a lower Sm concentration. The presence of silicon nanocrystals in SiO x films doped with Sm and annealed at 970 °C in air has been confirmed using Raman scattering spectra. A possible mechanism for interaction of samarium ions with the SiO x matrix and ncs-Si has been discussed.
{"title":"Luminescent and Raman study of nanostruc-tures formed upon annealing of SiOx:Sm films","authors":"K. Michailovska, I. Indutnyi, P. Shepeliavyi, M. Sopinskyy, V. Dan’ko, V. Yukhymchuk","doi":"10.15407/spqeo26.01.068","DOIUrl":"https://doi.org/10.15407/spqeo26.01.068","url":null,"abstract":"ncs-Si–SiO x :Sm structures formed by high-temperature air annealing of the SiO x films doped with samarium during thermal co-evaporation in vacuum of silicon monoxide and metallic Sm was studied. By measuring the spectra of photoluminescence (PL), it has been shown that doping of SiO x films with Sm stimulates their decomposition into Si and SiO 2 , and also reduces the transition temperature of silicon nanoparticle from the amorphous state to the crystalline one. With an increase in the impurity content up to 2 wt.%, along with the ncs-Si luminescence, the PL spectrum exhibits emission bands of Sm 3+ and Sm 2+ ions, which do not appear at a lower Sm concentration. The presence of silicon nanocrystals in SiO x films doped with Sm and annealed at 970 °C in air has been confirmed using Raman scattering spectra. A possible mechanism for interaction of samarium ions with the SiO x matrix and ncs-Si has been discussed.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"29 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84486290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Sachenko, V. Kostylyov, V. Vlasiuk, I. Sokolovskyi, M. Evstigneev, T. Slusar, V. V. Chernenko
Theoretical modeling of the optical and photovoltaic characteristics of highly efficient textured silicon solar cells (SC), including short-circuit current, open-circuit voltage and photoconversion efficiency, has been performed in this work. In the modeling, such recombination mechanisms as non-radiative exciton recombination relative to the Auger mechanism with the participation of a deep recombination level and recombination in the space charge region (SCR) was additionally taken into account. In a simple approximation, the external quantum efficiency of the photocurrent for the indicated SC in the long-wavelength absorption region has been simulated. A theory has been proposed for calculating the thickness dependences of short-circuit current, open-circuit voltage and photoconversion efficiency in them. The calculated dependences are carefully compared with the experimental results obtained for SC with the p+-i-α-Si:H/n-c-Si/i-n+-α-Si:H architecture and the photoconversion efficiency of about 23%. As a result of this comparison, good agreement between the theoretical and calculated dependences has been obtained. It has been ascertained that without taking into account recombination in SCR, a quantitative agreement between the experimental and theoretical light I V characteristics and the dependence of the output power in the SC load on the voltage on it cannot be obtained. The proposed approach and the obtained results can be used to optimize the characteristics of textured SC based on monocrystalline silicon.
{"title":"Modeling of characteristics of highly efficient textured solar cells based on c-silicon. The influence of recombination in the space charge region","authors":"A. Sachenko, V. Kostylyov, V. Vlasiuk, I. Sokolovskyi, M. Evstigneev, T. Slusar, V. V. Chernenko","doi":"10.15407/spqeo26.01.005","DOIUrl":"https://doi.org/10.15407/spqeo26.01.005","url":null,"abstract":"Theoretical modeling of the optical and photovoltaic characteristics of highly efficient textured silicon solar cells (SC), including short-circuit current, open-circuit voltage and photoconversion efficiency, has been performed in this work. In the modeling, such recombination mechanisms as non-radiative exciton recombination relative to the Auger mechanism with the participation of a deep recombination level and recombination in the space charge region (SCR) was additionally taken into account. In a simple approximation, the external quantum efficiency of the photocurrent for the indicated SC in the long-wavelength absorption region has been simulated. A theory has been proposed for calculating the thickness dependences of short-circuit current, open-circuit voltage and photoconversion efficiency in them. The calculated dependences are carefully compared with the experimental results obtained for SC with the p+-i-α-Si:H/n-c-Si/i-n+-α-Si:H architecture and the photoconversion efficiency of about 23%. As a result of this comparison, good agreement between the theoretical and calculated dependences has been obtained. It has been ascertained that without taking into account recombination in SCR, a quantitative agreement between the experimental and theoretical light I V characteristics and the dependence of the output power in the SC load on the voltage on it cannot be obtained. The proposed approach and the obtained results can be used to optimize the characteristics of textured SC based on monocrystalline silicon.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"58 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84898921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Savchenko, D.M. Yatsyk, O.M. Genkin, Yu.F. Nosachov, O. V. Drozdenko, V. Moiseenko, E. Kalabukhova
The silicon carbide (SiC) single crystals of 6H polytype with nitrogen donor concentration ND – NA) ≈ 1∙1017 ...4∙1019 cm –3 grown using the modified Lely method were studied applying the cavity perturbation method. From the temperature dependence of the resonant frequency shift and microwave loss of the cavity loaded with samples under study, the temperature dependence of the conductivity was estimated. From the temperature dependence of the natural logarithm of conductivity versus 1000/T, the activation energies for processes corresponding to electron transitions from impurity levels to the conduction band (ε1) and electron hopping over nitrogen donors in the D0 bands (ε3) were determined. It was found that in 6H-SiC ε1 = 50 meV for (ND – NA) ≈ 1∙10 17 cm –3 , ε1 = 32 meV and ε3 = 6 meV for (ND – NA) ≈ 1∙1019cm–3 , ε1 = 13.5 meV and ε3 = 3.5 meV for ((ND – NA) ≈ 4∙1019 cm–3.
{"title":"Electrical properties of highly nitrogen-doped 6H-SiC single crystals: Microwave cavity perturbation study","authors":"D. Savchenko, D.M. Yatsyk, O.M. Genkin, Yu.F. Nosachov, O. V. Drozdenko, V. Moiseenko, E. Kalabukhova","doi":"10.15407/spqeo26.01.030","DOIUrl":"https://doi.org/10.15407/spqeo26.01.030","url":null,"abstract":"The silicon carbide (SiC) single crystals of 6H polytype with nitrogen donor concentration ND – NA) ≈ 1∙1017 ...4∙1019 cm –3 grown using the modified Lely method were studied applying the cavity perturbation method. From the temperature dependence of the resonant frequency shift and microwave loss of the cavity loaded with samples under study, the temperature dependence of the conductivity was estimated. From the temperature dependence of the natural logarithm of conductivity versus 1000/T, the activation energies for processes corresponding to electron transitions from impurity levels to the conduction band (ε1) and electron hopping over nitrogen donors in the D0 bands (ε3) were determined. It was found that in 6H-SiC ε1 = 50 meV for (ND – NA) ≈ 1∙10 17 cm –3 , ε1 = 32 meV and ε3 = 6 meV for (ND – NA) ≈ 1∙1019cm–3 , ε1 = 13.5 meV and ε3 = 3.5 meV for ((ND – NA) ≈ 4∙1019 cm–3.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"98 ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91467129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Malakhovska, A. Pogodin, M. Filep, M. Pop, Y. Studenyak, K.M. Nemesh, R. Mariychuk, V. Vakulchak, V. Komanický, S. Vorobiov
This work presents a simple and environmentally friendly method of synthesis of chitosan and Ag nanocomposites. The structure of the obtained organic matrix was determined by Fourier-transform infrared spectroscopy (FTIR). Formation of chitosan- chitin copolymer was discovered. Nanocomposite films with silver content of 9–71 wt.% were prepared. The microstructure and elemental composition of the obtained films were investigated by scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). The prepared films are characterized by uniform distribution of silver nanoparticles in the organic matrix. Optical properties were studied by diffuse reflectance spectroscopy. The diffuse reflectance spectra of the films have maxima. The increase of the Ag 0 concentration in the nanocomposite films was found to lead to the maximum shift of the diffuse reflectance spectra to longer wavelengths. The optical transitions energies were estimated using the Kubelka–Munk function in combination with the Tauc method.
{"title":"Optical characteristics of silver-based nano-composites fabricated by an environmentally friendly method","authors":"T. Malakhovska, A. Pogodin, M. Filep, M. Pop, Y. Studenyak, K.M. Nemesh, R. Mariychuk, V. Vakulchak, V. Komanický, S. Vorobiov","doi":"10.15407/spqeo26.01.076","DOIUrl":"https://doi.org/10.15407/spqeo26.01.076","url":null,"abstract":"This work presents a simple and environmentally friendly method of synthesis of chitosan and Ag nanocomposites. The structure of the obtained organic matrix was determined by Fourier-transform infrared spectroscopy (FTIR). Formation of chitosan- chitin copolymer was discovered. Nanocomposite films with silver content of 9–71 wt.% were prepared. The microstructure and elemental composition of the obtained films were investigated by scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). The prepared films are characterized by uniform distribution of silver nanoparticles in the organic matrix. Optical properties were studied by diffuse reflectance spectroscopy. The diffuse reflectance spectra of the films have maxima. The increase of the Ag 0 concentration in the nanocomposite films was found to lead to the maximum shift of the diffuse reflectance spectra to longer wavelengths. The optical transitions energies were estimated using the Kubelka–Munk function in combination with the Tauc method.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"17 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88686738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Within the framework of the density functional theory and the ab initio pseudopotential, we have obtained the spatial distributions of the valence electrons density, the electron energy spectra and the atom charge states of 1D-coordination polymers based on arendiyl-bisphosphinic acids and metal ions. Formation of one-dimensional polymer chains takes place under participation of strong intermolecular bonds.
{"title":"Complex formation of 1D-coordination poly-mers based on arendiyl-bisphosphinic acid","authors":"R. Balabai, O. Bondarenko, M.V. Yatsiuta","doi":"10.15407/spqeo26.01.036","DOIUrl":"https://doi.org/10.15407/spqeo26.01.036","url":null,"abstract":"Within the framework of the density functional theory and the ab initio pseudopotential, we have obtained the spatial distributions of the valence electrons density, the electron energy spectra and the atom charge states of 1D-coordination polymers based on arendiyl-bisphosphinic acids and metal ions. Formation of one-dimensional polymer chains takes place under participation of strong intermolecular bonds.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"8 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87307041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Pekur, D. Khmil’, Y. Bacherikov, A. Mammadli, J. Naghiyev, N.Y. Suleymanova, C.Y. Abbasova, S. Lyubchyk
Ionizing radiation is widely used nowadays for diagnosing and probing a wide range of objects due to the high reliability and quality of the results obtained in such research. Use of highly sensitive ionizing radiation sensors enables the reduction of the radiation dose involved in the research. Moreover, sensitive systems for monitoring environmental parameters may be also created based on such sensors. In this work, the efficiency of a low density radiation detector with the composite scintillation structure based on powdery YAG:Ce phosphor as the converting coating of photosensitive detector was investigated. The possibility to detect gamma radiation from the 241 Am and 137 Cs based sources by the ionizing radiation detector comprising YAG:Ce 3+ composite converting scintillation structure and micropixel avalanche photodiode (MAPD) was found. The number of detected gamma rays emitted by the 241 Am source was shown to increase linearly with the thickness of the composite converting scintillation structure. The thickness of the composite converting scintillation structure of 495 µm was found to enable registration of gamma-rays with the energies in the range of 26 to 662 keV.
{"title":"Investigation of gamma-ray sensitivity of YAG:Ce based scintillation structures","authors":"D. Pekur, D. Khmil’, Y. Bacherikov, A. Mammadli, J. Naghiyev, N.Y. Suleymanova, C.Y. Abbasova, S. Lyubchyk","doi":"10.15407/spqeo26.01.089","DOIUrl":"https://doi.org/10.15407/spqeo26.01.089","url":null,"abstract":"Ionizing radiation is widely used nowadays for diagnosing and probing a wide range of objects due to the high reliability and quality of the results obtained in such research. Use of highly sensitive ionizing radiation sensors enables the reduction of the radiation dose involved in the research. Moreover, sensitive systems for monitoring environmental parameters may be also created based on such sensors. In this work, the efficiency of a low density radiation detector with the composite scintillation structure based on powdery YAG:Ce phosphor as the converting coating of photosensitive detector was investigated. The possibility to detect gamma radiation from the 241 Am and 137 Cs based sources by the ionizing radiation detector comprising YAG:Ce 3+ composite converting scintillation structure and micropixel avalanche photodiode (MAPD) was found. The number of detected gamma rays emitted by the 241 Am source was shown to increase linearly with the thickness of the composite converting scintillation structure. The thickness of the composite converting scintillation structure of 495 µm was found to enable registration of gamma-rays with the energies in the range of 26 to 662 keV.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"161 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77731599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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