This article investigates biosynthesis of zinc oxide (ZnO) nanoparticles (NPs) from Moringa oleifera leaves extract using an eco-friendly preparation method. The crystalline structure, optical properties, morphology and impedance characteristics of ZnO NPs were analyzed using impedance spectroscopy, powder X-ray diffraction (XRD), scanning electron microscopy, Fourier transform infrared spectroscopy (FTIR) and ultraviolet spectroscopy (UV-vis). The powder XRD pattern confirmed the crystallinity of the prepared samples as well as enabled determining their crystallite size and pure phase portion. The FTIR study confirmed the presence of functional groups responsible for reduction metal ions into ZnO NPs. UV-vis absorption spectra contained the absorption peak corresponding to ZnO NPs. Impedance spectroscopy of the prepared ZnO NPs revealed the grain boundaries in them and confirmed their semiconducting nature.
{"title":"Green route to prepare zinc oxide nanoparticles using Moringa oleifera leaf extracts and their structural, optical and impedance spectral properties","authors":"S. Vella Durai, E. Kumar, R. Indira","doi":"10.15407/spqeo27.01.064","DOIUrl":"https://doi.org/10.15407/spqeo27.01.064","url":null,"abstract":"This article investigates biosynthesis of zinc oxide (ZnO) nanoparticles (NPs) from Moringa oleifera leaves extract using an eco-friendly preparation method. The crystalline structure, optical properties, morphology and impedance characteristics of ZnO NPs were analyzed using impedance spectroscopy, powder X-ray diffraction (XRD), scanning electron microscopy, Fourier transform infrared spectroscopy (FTIR) and ultraviolet spectroscopy (UV-vis). The powder XRD pattern confirmed the crystallinity of the prepared samples as well as enabled determining their crystallite size and pure phase portion. The FTIR study confirmed the presence of functional groups responsible for reduction metal ions into ZnO NPs. UV-vis absorption spectra contained the absorption peak corresponding to ZnO NPs. Impedance spectroscopy of the prepared ZnO NPs revealed the grain boundaries in them and confirmed their semiconducting nature.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"69 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140249328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The recombination rate in the space charge region (SCR) of a silicon-based barrier structure with a long Shockley–Reed–Hall lifetime is calculated theoretically by taking into account the concentration gradient of excess electron-hole pairs in the base region. Effects of the SCR lifetime and applied voltage on the structure ideality factor have been analyzed. The ideality factor is significantly reduced by the concentration gradient of electron-hole pairs. This mechanism provides an increase of the effective lifetime compared to the case when it is insignificant, which is realized at sufficiently low pair concentrations. The theoretical results have been shown to be in agreement with experimental data. A method of finding the experimental recombination rate in SCR in highly efficient silicon solar cells (SCs) has been proposed and implemented. It has been shown that at the high excess carrier concentration exceeding 1015 cm–3 the contribution to the SCR recombination velocity from the initial region of SCR that became neutral is significant. From a comparison of theory with experiment, the SCR lifetime and the ratio of the hole to the electron capture cross sections are determined for a number of silicon SCs. The effect of SCR recombination on the key characteristics of highly efficient silicon SCs, such as photoconversion efficiency and open-circuit voltage, has been evaluated. It has been shown that they depend not only on the charge carrier lifetime in SCR, but also on the ratio of hole to electron capture cross sections σp /σn. When σp /σn < 1, this effect is significantly strengthened, while in the opposite case σp /σn > 1 it is weakened. It has been ascertained that in a number of highly efficient silicon SCs, the distribution of the inverse lifetime in SCR is described by the Gaussian one. The effect described in the paper is also significant for silicon diodes with a thin base, p-i-n structures, and for silicon transistors with p-n junctions. In Appendix 2, the need to take into account the lifetime of non-radiative excitonic Auger recombination with participation of deep impurities in silicon is analyzed in detail. It has been shown, in particular, that considering it enables to reconcile the theoretical and experimental dependences for the effective lifetime in the silicon bulk.
{"title":"Space charge region recombination in highly efficient silicon solar cells","authors":"A. Sachenko, V. Kostylyov, M. Evstigneev","doi":"10.15407/spqeo27.01.010","DOIUrl":"https://doi.org/10.15407/spqeo27.01.010","url":null,"abstract":"The recombination rate in the space charge region (SCR) of a silicon-based barrier structure with a long Shockley–Reed–Hall lifetime is calculated theoretically by taking into account the concentration gradient of excess electron-hole pairs in the base region. Effects of the SCR lifetime and applied voltage on the structure ideality factor have been analyzed. The ideality factor is significantly reduced by the concentration gradient of electron-hole pairs. This mechanism provides an increase of the effective lifetime compared to the case when it is insignificant, which is realized at sufficiently low pair concentrations. The theoretical results have been shown to be in agreement with experimental data. A method of finding the experimental recombination rate in SCR in highly efficient silicon solar cells (SCs) has been proposed and implemented. It has been shown that at the high excess carrier concentration exceeding 1015 cm–3 the contribution to the SCR recombination velocity from the initial region of SCR that became neutral is significant. From a comparison of theory with experiment, the SCR lifetime and the ratio of the hole to the electron capture cross sections are determined for a number of silicon SCs. The effect of SCR recombination on the key characteristics of highly efficient silicon SCs, such as photoconversion efficiency and open-circuit voltage, has been evaluated. It has been shown that they depend not only on the charge carrier lifetime in SCR, but also on the ratio of hole to electron capture cross sections σp /σn. When σp /σn < 1, this effect is significantly strengthened, while in the opposite case σp /σn > 1 it is weakened. It has been ascertained that in a number of highly efficient silicon SCs, the distribution of the inverse lifetime in SCR is described by the Gaussian one. The effect described in the paper is also significant for silicon diodes with a thin base, p-i-n structures, and for silicon transistors with p-n junctions. In Appendix 2, the need to take into account the lifetime of non-radiative excitonic Auger recombination with participation of deep impurities in silicon is analyzed in detail. It has been shown, in particular, that considering it enables to reconcile the theoretical and experimental dependences for the effective lifetime in the silicon bulk.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"10 5","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140250733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
I. Indutnyi, S.V. Mamykin, V. Mynko, M. Sopinskyy, A.A. Korchovyi
In this paper, we present the results of studying the features of plasmon- enhanced photostimulated diffusion of silver into thin films of chalcogenide glasses (ChG), in particular, As 2 S 3 and GeSe 2 . To ensure excitation of surface plasmon-polaritons (SPPs) at the interface between silver and ChG films, silver diffraction gratings with periods of 899 and 694 nm were used as substrates. The samples were exposed to the p-polarized radiation of a He-Ne laser (λ = 632.8 nm). The radiation of the same laser, attenuated by two orders of magnitude, was used to detect SPP, which enabled to study the kinetics of photostimulated processes in the thin-layer structure of Ag–ChG. It has been established that in the initial period of exposure, the SPP electromagnetic field significantly enhances the photostimulated flux of silver ions in ChG (by 2-3 times). The photodissolution kinetics of Ag in ChG is defined by the features of the granular structure of the investigated thin chalcogenide films. For the GeSe 2 film with the effective thickness 8 nm, the kinetics of the film refractive index increase caused by silver photodoping is well approximated by a logarithmic dependence. For the Ag–As 2 S 3 structure (the effective thickness of the As 2 S 3 film is 14.8 nm), this kinetics is closer to the linear one; moreover, for photodoping without SPP excitation, the kinetics is somewhat superlinear, while with plasmon excitation, it is sublinear. The main physical mechanism responsible for the acceleration of the process of photostimulated diffusion in the structure under study appears to be an accelerated generation of electron-hole pairs, which takes place in the ChG layer near the interface with the metal, where the SPP electromagnetic field strength is maximum, and/or plasmon- assisted hot carrier generation due to plasmon scattering on the surface of the metal film and subsequent internal photoemission of electrons from silver into chalcogenide.
{"title":"Plasmon enhancement of photosensitivity of Ag–chalcogenide glass thin film structures","authors":"I. Indutnyi, S.V. Mamykin, V. Mynko, M. Sopinskyy, A.A. Korchovyi","doi":"10.15407/spqeo26.04.432","DOIUrl":"https://doi.org/10.15407/spqeo26.04.432","url":null,"abstract":"In this paper, we present the results of studying the features of plasmon- enhanced photostimulated diffusion of silver into thin films of chalcogenide glasses (ChG), in particular, As 2 S 3 and GeSe 2 . To ensure excitation of surface plasmon-polaritons (SPPs) at the interface between silver and ChG films, silver diffraction gratings with periods of 899 and 694 nm were used as substrates. The samples were exposed to the p-polarized radiation of a He-Ne laser (λ = 632.8 nm). The radiation of the same laser, attenuated by two orders of magnitude, was used to detect SPP, which enabled to study the kinetics of photostimulated processes in the thin-layer structure of Ag–ChG. It has been established that in the initial period of exposure, the SPP electromagnetic field significantly enhances the photostimulated flux of silver ions in ChG (by 2-3 times). The photodissolution kinetics of Ag in ChG is defined by the features of the granular structure of the investigated thin chalcogenide films. For the GeSe 2 film with the effective thickness 8 nm, the kinetics of the film refractive index increase caused by silver photodoping is well approximated by a logarithmic dependence. For the Ag–As 2 S 3 structure (the effective thickness of the As 2 S 3 film is 14.8 nm), this kinetics is closer to the linear one; moreover, for photodoping without SPP excitation, the kinetics is somewhat superlinear, while with plasmon excitation, it is sublinear. The main physical mechanism responsible for the acceleration of the process of photostimulated diffusion in the structure under study appears to be an accelerated generation of electron-hole pairs, which takes place in the ChG layer near the interface with the metal, where the SPP electromagnetic field strength is maximum, and/or plasmon- assisted hot carrier generation due to plasmon scattering on the surface of the metal film and subsequent internal photoemission of electrons from silver into chalcogenide.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"109 8","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138599854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y.V. Bondaruk, T.S. Kavetskyy, A.O. Vinkovskaya, M. Kushniyazova, D.O. Dyachok, L.I. Pankiv, H.M. Klepach, O. Mushynska, O. Zubrytska, O.I. Matskiv, Y. Pavlovskyy, S.Y. Voloshanska, S. Monastyrska, L.V. Bodnar, A.E. Kiv
Porous materials occupy an important place among the materials of electronic equipment. Nanopores, which are obtained by ion irradiation of materials, have a complex internal structure that depends on the interaction of fast ions with the substance. Obtaining such structures is important, in particular, in the manufacture of biosensor devices based on them. The most effective methods of studying their properties are computer simulations. However, effective computer models of track structures, necessary for the development and improvement of modern biosensors, are not being created actively enough. The approach proposed here involves a detailed study of the interaction of ion flows with the inner surface of the nanotrack. This approach takes into account the structural features of the inner surface of the track as well as the role of adsorption and scattering centers and other local centers. In the existing approaches, the processes mentioned above are mainly described phenomenologically, which does not indicate the ways of modifying the characteristics of the material that is necessary for the device improvement.
{"title":"Improvement of new electronic materials using computer modeling","authors":"Y.V. Bondaruk, T.S. Kavetskyy, A.O. Vinkovskaya, M. Kushniyazova, D.O. Dyachok, L.I. Pankiv, H.M. Klepach, O. Mushynska, O. Zubrytska, O.I. Matskiv, Y. Pavlovskyy, S.Y. Voloshanska, S. Monastyrska, L.V. Bodnar, A.E. Kiv","doi":"10.15407/spqeo26.04.470","DOIUrl":"https://doi.org/10.15407/spqeo26.04.470","url":null,"abstract":"Porous materials occupy an important place among the materials of electronic equipment. Nanopores, which are obtained by ion irradiation of materials, have a complex internal structure that depends on the interaction of fast ions with the substance. Obtaining such structures is important, in particular, in the manufacture of biosensor devices based on them. The most effective methods of studying their properties are computer simulations. However, effective computer models of track structures, necessary for the development and improvement of modern biosensors, are not being created actively enough. The approach proposed here involves a detailed study of the interaction of ion flows with the inner surface of the nanotrack. This approach takes into account the structural features of the inner surface of the track as well as the role of adsorption and scattering centers and other local centers. In the existing approaches, the processes mentioned above are mainly described phenomenologically, which does not indicate the ways of modifying the characteristics of the material that is necessary for the device improvement.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"92 20","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138600167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P.M. Lytvyn, V. Dzhagan, M. Valakh, A.A. Korchovyi, O.F. Isaieva, O.A. Stadnik, O. Kulbachynskyi, O.Yo. Gudymenko, B. Romanyuk, V.P. Melnik
Vanadium oxide (VO x ) thin films are promising materials, exhibiting electrical, optical, and mechanical properties highly tunable by processing and structure. This work uniquely applying atomic force microscopy (AFM) nanoindentation correlated with X-ray diffractometry and Raman spectroscopy structural analysis to investigate the intricate connections between VO x post-annealing, phase composition, and resulting nanoscale mechanical functionality. Utilizing an ultra-sharp diamond tip as a nanoscale indenter, indentation is performed on VO x films with systematic variations in structure – from mixed insulating oxides to VO 2 -dominated films. Analytical modeling enables extraction of hardness and elastic modulus with nanoscale resolution. Dramatic mechanical property variations are observed between compositions, with order-of-magnitude increases in hardness and elastic modulus for the VO 2 -rich films versus insulating oxides. Ion implantation further enhances nanomechanical performance through targeted defect engineering. Correlating indentation-derived trends with detailed structural and morphological characterization elucidates explicit structure-property relationships inaccessible by other techniques. The approach provides critical mechanics-driven insights into links between VO x synthesis, structure evolution, and property development. Broader implementation will accelerate processing optimization for electronics and advanced fundamental understanding of nanoscale structure-functionality relationships
{"title":"Nanomechanical properties of polycrystalline vanadium oxide thin films of different phase composition","authors":"P.M. Lytvyn, V. Dzhagan, M. Valakh, A.A. Korchovyi, O.F. Isaieva, O.A. Stadnik, O. Kulbachynskyi, O.Yo. Gudymenko, B. Romanyuk, V.P. Melnik","doi":"10.15407/spqeo26.04.388","DOIUrl":"https://doi.org/10.15407/spqeo26.04.388","url":null,"abstract":"Vanadium oxide (VO x ) thin films are promising materials, exhibiting electrical, optical, and mechanical properties highly tunable by processing and structure. This work uniquely applying atomic force microscopy (AFM) nanoindentation correlated with X-ray diffractometry and Raman spectroscopy structural analysis to investigate the intricate connections between VO x post-annealing, phase composition, and resulting nanoscale mechanical functionality. Utilizing an ultra-sharp diamond tip as a nanoscale indenter, indentation is performed on VO x films with systematic variations in structure – from mixed insulating oxides to VO 2 -dominated films. Analytical modeling enables extraction of hardness and elastic modulus with nanoscale resolution. Dramatic mechanical property variations are observed between compositions, with order-of-magnitude increases in hardness and elastic modulus for the VO 2 -rich films versus insulating oxides. Ion implantation further enhances nanomechanical performance through targeted defect engineering. Correlating indentation-derived trends with detailed structural and morphological characterization elucidates explicit structure-property relationships inaccessible by other techniques. The approach provides critical mechanics-driven insights into links between VO x synthesis, structure evolution, and property development. Broader implementation will accelerate processing optimization for electronics and advanced fundamental understanding of nanoscale structure-functionality relationships","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"53 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138598541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Ievtushenko, V. Karpyna, O.I. Bykov, M. Dranchuk, O. Kolomys, D.M. Maziar, V. Strelchuk, S.P. Starik, V.A. Baturin, О.Y. Karpenko, O.S. Lytvyn
Vanadium oxide (VO x ) thin films are promising materials, exhibiting electrical, optical, and mechanical properties highly tunable by processing and structure. This work uniquely applying atomic force microscopy (AFM) nanoindentation correlated with X-ray diffractometry and Raman spectroscopy structural analysis to investigate the intricate connections between VO x post-annealing, phase composition, and resulting nanoscale mechanical functionality. Utilizing an ultra-sharp diamond tip as a nanoscale indenter, indentation is performed on VO x films with systematic variations in structure – from mixed insulating oxides to VO 2 -dominated films. Analytical modeling enables extraction of hardness and elastic modulus with nanoscale resolution. Dramatic mechanical property variations are observed between compositions, with order-of-magnitude increases in hardness and elastic modulus for the VO 2 -rich films versus insulating oxides. Ion implantation further enhances nanomechanical performance through targeted defect engineering. Correlating indentation-derived trends with detailed structural and morphological characterization elucidates explicit structure-property relationships inaccessible by other techniques. The approach provides critical mechanics-driven insights into links between VO x synthesis, structure evolution, and property development. Broader implementation will accelerate processing optimization for electronics and advanced fundamental understanding of nanoscale structure-functionality relationships
{"title":"The influence of substrate temperature on the structure and optical properties of NiO thin films deposited using the magnetron sputtering in the layer-by-layer growth regime","authors":"A. Ievtushenko, V. Karpyna, O.I. Bykov, M. Dranchuk, O. Kolomys, D.M. Maziar, V. Strelchuk, S.P. Starik, V.A. Baturin, О.Y. Karpenko, O.S. Lytvyn","doi":"10.15407/spqeo26.04.398","DOIUrl":"https://doi.org/10.15407/spqeo26.04.398","url":null,"abstract":"Vanadium oxide (VO x ) thin films are promising materials, exhibiting electrical, optical, and mechanical properties highly tunable by processing and structure. This work uniquely applying atomic force microscopy (AFM) nanoindentation correlated with X-ray diffractometry and Raman spectroscopy structural analysis to investigate the intricate connections between VO x post-annealing, phase composition, and resulting nanoscale mechanical functionality. Utilizing an ultra-sharp diamond tip as a nanoscale indenter, indentation is performed on VO x films with systematic variations in structure – from mixed insulating oxides to VO 2 -dominated films. Analytical modeling enables extraction of hardness and elastic modulus with nanoscale resolution. Dramatic mechanical property variations are observed between compositions, with order-of-magnitude increases in hardness and elastic modulus for the VO 2 -rich films versus insulating oxides. Ion implantation further enhances nanomechanical performance through targeted defect engineering. Correlating indentation-derived trends with detailed structural and morphological characterization elucidates explicit structure-property relationships inaccessible by other techniques. The approach provides critical mechanics-driven insights into links between VO x synthesis, structure evolution, and property development. Broader implementation will accelerate processing optimization for electronics and advanced fundamental understanding of nanoscale structure-functionality relationships","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"62 9","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138600643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The Ukrainian journal Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO) was launched in 1998 artificially combining three main areas of scientific activity inherent to the V. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine, namely semiconductor physics, quantum electronics and optoelectronics. After a decade this artificial base turned into some kind of organic symbiosis, namely: (i) the main optoelectronic systems are based on semiconductor devices, for example, fiber-optic networks; (ii) semiconductor lasers dominate in a huge number of applications in quantum electronics; (iii) semiconductor physics proposes new types of LEDs with extremely high efficiency, and so on. This article is dedicated to the 25 th anniversary of SPQEO. According to the Google Scholar Citation statistics, above 1680 articles cited more than 7350 times in total were published in the journal from 1998 to 2023. The statistics of references of journal articles and the scientific areas of the most cited articles are presented.
{"title":"Achievements and prospects: 25 years of SPQEO journal","authors":"A. Belyaev, V. Kochelap, P. Smertenko","doi":"10.15407/spqeo26.04.362","DOIUrl":"https://doi.org/10.15407/spqeo26.04.362","url":null,"abstract":"The Ukrainian journal Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO) was launched in 1998 artificially combining three main areas of scientific activity inherent to the V. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine, namely semiconductor physics, quantum electronics and optoelectronics. After a decade this artificial base turned into some kind of organic symbiosis, namely: (i) the main optoelectronic systems are based on semiconductor devices, for example, fiber-optic networks; (ii) semiconductor lasers dominate in a huge number of applications in quantum electronics; (iii) semiconductor physics proposes new types of LEDs with extremely high efficiency, and so on. This article is dedicated to the 25 th anniversary of SPQEO. According to the Google Scholar Citation statistics, above 1680 articles cited more than 7350 times in total were published in the journal from 1998 to 2023. The statistics of references of journal articles and the scientific areas of the most cited articles are presented.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"53 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138600742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
I. Shender, A. Pogodin, M. Filep, T. Malakhovska, O. Kokhan, V.S. Bilanych, K. V. Skubenych, O. I. Symkanych, V. Izai, L. Suslikov
Herein we present the results of microhardness investigations aimed at monocrystalline samples of Ag 7 (Si 1–x Ge x )S 5 I (0, 0.2, 0.4, 0.6, 0.8, 1) and Ag 6+x (P 1–x Ge x )S 5 I (0, 0.25, 0.5, 0.75, 1) solid solutions. The dependence of microhardness H on the load P and composition were investigated. It has been observed that the microhardness dependence on the applied load is characterized by a tendency to decrease with increasing the load. It indicates a presence of “normal” size effect in both Ag 7 (Si 1–x Ge x )S 5 I and Ag 6+x (P 1–x Ge x )S 5 I (0, 0.25, 0.5, 0.75, 1) solid solutions. The revealed size effects of hardness in single crystals of Ag 7 (Si 1–x Ge x )S 5 I and Ag 6+x (P 1-x Ge x )S 5 I solid solutions have been analyzed within the framework of the gradient theory of plasticity. The corresponding parameters of the model of geometrically necessary dislocations have been determined.
本文介绍了针对Ag 7 (Si 1 - x Ge x) s5i(0,0.2, 0.4, 0.6, 0.8, 1)和Ag 6+x (p1 - x Ge x) s5i(0,0.25, 0.5, 0.75, 1)固溶体单晶样品的显微硬度研究结果。研究了微硬度H与载荷P和成分的关系。显微硬度对外加载荷的依赖性随着载荷的增加呈下降趋势。结果表明，Ag 7 (Si 1 - x Ge x) s5i和Ag 6+x (p1 - x Ge x) s5i(0,0.25, 0.5, 0.75, 1)固溶体均存在“正常”尺寸效应。在塑性梯度理论的框架下，分析了Ag 7 (Si 1-x Ge x) s5i和Ag 6+x (p1 -x Ge x) s5i固溶体单晶硬度的尺寸效应。确定了几何必要位错模型的相应参数。
{"title":"Influence of cation Si4+↔Ge4+ and P5+↔Ge4+ sub-stitution on the mechanical parameters of single crystals Ag7(Si1–xGex)S5I and Ag6+x(P1–xGex)S5I","authors":"I. Shender, A. Pogodin, M. Filep, T. Malakhovska, O. Kokhan, V.S. Bilanych, K. V. Skubenych, O. I. Symkanych, V. Izai, L. Suslikov","doi":"10.15407/spqeo26.04.408","DOIUrl":"https://doi.org/10.15407/spqeo26.04.408","url":null,"abstract":"Herein we present the results of microhardness investigations aimed at monocrystalline samples of Ag 7 (Si 1–x Ge x )S 5 I (0, 0.2, 0.4, 0.6, 0.8, 1) and Ag 6+x (P 1–x Ge x )S 5 I (0, 0.25, 0.5, 0.75, 1) solid solutions. The dependence of microhardness H on the load P and composition were investigated. It has been observed that the microhardness dependence on the applied load is characterized by a tendency to decrease with increasing the load. It indicates a presence of “normal” size effect in both Ag 7 (Si 1–x Ge x )S 5 I and Ag 6+x (P 1–x Ge x )S 5 I (0, 0.25, 0.5, 0.75, 1) solid solutions. The revealed size effects of hardness in single crystals of Ag 7 (Si 1–x Ge x )S 5 I and Ag 6+x (P 1-x Ge x )S 5 I solid solutions have been analyzed within the framework of the gradient theory of plasticity. The corresponding parameters of the model of geometrically necessary dislocations have been determined.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"68 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138600703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Organic multidomain dyes exhibiting excited state intramolecular proton transfer (ESIPT) are known due to large Stokes shifts and dependence of their luminescence spectral characteristics on the properties of the environment. In this work, influence of gold nanostructures on the spectral characteristics of a “polycarbonate matrix – gold nanostructures – HTTH” system was studied using thiazole dye HTTH as an example. A hypothesis about the possibility of plasmon resonance energy transfer (PRET) between the HTTH molecules in different states, namely the ground state (enol form) and the state after proton transfer (keto form), mediated by gold nanostructures was experimentally tested. Presence of gold nanostructures in the vicinity of HTTH molecules was found to lead to the changes in the ratio of the luminescence peak intensities for the enol and keto form of these molecules. This phenomenon opens up the possibility of additional regulation of the spectral characteristics and may evidence the PRET effect in the systems containing ESIPT-exhibiting dyes and plasmonic nanostructures. The obtained results improve our understanding of the physical processes in the systems similar to the studied one and imply new practical applications of them such as fabrication of organic light-emitting diodes, sensors, super-resolution microscopy tools and ultraviolet-to-visible radiation convertors.
{"title":"Influence of gold nanostructures on excited state intramolecular proton transfer in multidomain HTTH dye","authors":"I. I. Hudzenko, A. Lopatynskyi, V. Chegel","doi":"10.15407/spqeo26.04.457","DOIUrl":"https://doi.org/10.15407/spqeo26.04.457","url":null,"abstract":"Organic multidomain dyes exhibiting excited state intramolecular proton transfer (ESIPT) are known due to large Stokes shifts and dependence of their luminescence spectral characteristics on the properties of the environment. In this work, influence of gold nanostructures on the spectral characteristics of a “polycarbonate matrix – gold nanostructures – HTTH” system was studied using thiazole dye HTTH as an example. A hypothesis about the possibility of plasmon resonance energy transfer (PRET) between the HTTH molecules in different states, namely the ground state (enol form) and the state after proton transfer (keto form), mediated by gold nanostructures was experimentally tested. Presence of gold nanostructures in the vicinity of HTTH molecules was found to lead to the changes in the ratio of the luminescence peak intensities for the enol and keto form of these molecules. This phenomenon opens up the possibility of additional regulation of the spectral characteristics and may evidence the PRET effect in the systems containing ESIPT-exhibiting dyes and plasmonic nanostructures. The obtained results improve our understanding of the physical processes in the systems similar to the studied one and imply new practical applications of them such as fabrication of organic light-emitting diodes, sensors, super-resolution microscopy tools and ultraviolet-to-visible radiation convertors.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"137 21","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138598758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Nikolenko, P.M. Lytvyn, V. Strelchuk, I. M. Danylenko, S. V. Malyuta, Y. Kudryk, Yurii Stubrov, T.V. Kovalenko, S. Ivakhnenko
Boron-doped diamond (BDD) films grown by chemical vapor deposition (CVD) exhibit unique electrical and optical properties owing to the non-uniform uptake of boron dopants across grains. This study utilizes scanning probe microscopy and confocal micro- spectroscopy techniques to elucidate the influence of grain-dependent boron incorporation on the nano-electrical and local optical characteristics of polycrystalline BDD. The CVD- grown BDD film contained crystallites up to tens of microns, while the surface comprised 200…800 nm grains. Scanning spreading resistance microscopy (SSRM) revealed significant nanoscale resistance variations among individual grains, attributable to differential boron distributions. No distinct grain boundary features were discernible in SSRM data, likely due to the high boron doping of ~ 3·10 19 cm –3 . SSRM of the Au surface of a BDD/Ti/Pd/Au contact indicated a comparable granular morphology but three orders lower resistance. A network of more resistive grain boundaries was evident, modulated by underlying BDD grain clusters. Photoluminescence spectroscopy showed characteristic bands of nitrogen-vacancy centers and donor-acceptor pairs. Confocal Raman and photoluminescence mapping elucidated substantial spatial heterogeneity in micrometer- scale grains regarding crystal quality, boron and nitrogen concentrations, related to preferential incorporation. The observed peculiarities in BDD’s structural and nano- electrical characteristics stem from inherent growth inhomogeneities and grain-dependent boron uptake influenced by defects and strain fields modifying local chemical potentials. This multifaceted nanoscale examination provides critical insights into optimizing electrical and optical properties of BDD films by controlling synthesis conditions and minimizing defects for tailored performance in electronic, electrochemical, and quantum applications.
通过化学气相沉积(CVD)生长的掺硼金刚石(BDD)薄膜由于硼掺杂剂在晶粒间的不均匀吸收而表现出独特的电学和光学特性。本研究利用扫描探针显微镜和共聚焦微光谱学技术来阐明晶粒依赖性硼掺杂对多晶BDD纳米电学和局部光学特性的影响。CVD生长的BDD薄膜的晶粒尺寸可达数十微米，而表面则由200 ~ 800 nm的晶粒组成。扫描扩展电阻显微镜(SSRM)显示，由于硼的不同分布，单个晶粒之间的纳米级电阻存在显著差异。SSRM数据中没有明显的晶界特征，可能是由于~ 3·10 19 cm -3的高硼掺杂所致。BDD/Ti/Pd/Au触点的Au表面的SSRM显示出类似的颗粒形态，但电阻低了三个数量级。一个更有电阻的晶界网络是明显的，由底层的BDD晶粒团簇调制。光致发光光谱显示了氮空位中心和供体-受体对的特征带。共聚焦拉曼和光致发光图谱揭示了微米尺度晶粒在晶体质量、硼和氮浓度方面的空间异质性，这与优先掺入有关。观察到的BDD结构和纳米电学特性的特殊性源于固有的生长不均匀性和晶粒依赖的硼吸收，受缺陷和改变局部化学势的应变场的影响。这种多方面的纳米级检测为优化BDD薄膜的电学和光学特性提供了关键的见解，通过控制合成条件和最小化缺陷来优化电子、电化学和量子应用中的定制性能。
{"title":"Impact of grain-dependent boron uptake on the nano-electrical and local optical properties of polycrystalline boron doped CVD diamond","authors":"A. Nikolenko, P.M. Lytvyn, V. Strelchuk, I. M. Danylenko, S. V. Malyuta, Y. Kudryk, Yurii Stubrov, T.V. Kovalenko, S. Ivakhnenko","doi":"10.15407/spqeo26.04.376","DOIUrl":"https://doi.org/10.15407/spqeo26.04.376","url":null,"abstract":"Boron-doped diamond (BDD) films grown by chemical vapor deposition (CVD) exhibit unique electrical and optical properties owing to the non-uniform uptake of boron dopants across grains. This study utilizes scanning probe microscopy and confocal micro- spectroscopy techniques to elucidate the influence of grain-dependent boron incorporation on the nano-electrical and local optical characteristics of polycrystalline BDD. The CVD- grown BDD film contained crystallites up to tens of microns, while the surface comprised 200…800 nm grains. Scanning spreading resistance microscopy (SSRM) revealed significant nanoscale resistance variations among individual grains, attributable to differential boron distributions. No distinct grain boundary features were discernible in SSRM data, likely due to the high boron doping of ~ 3·10 19 cm –3 . SSRM of the Au surface of a BDD/Ti/Pd/Au contact indicated a comparable granular morphology but three orders lower resistance. A network of more resistive grain boundaries was evident, modulated by underlying BDD grain clusters. Photoluminescence spectroscopy showed characteristic bands of nitrogen-vacancy centers and donor-acceptor pairs. Confocal Raman and photoluminescence mapping elucidated substantial spatial heterogeneity in micrometer- scale grains regarding crystal quality, boron and nitrogen concentrations, related to preferential incorporation. The observed peculiarities in BDD’s structural and nano- electrical characteristics stem from inherent growth inhomogeneities and grain-dependent boron uptake influenced by defects and strain fields modifying local chemical potentials. This multifaceted nanoscale examination provides critical insights into optimizing electrical and optical properties of BDD films by controlling synthesis conditions and minimizing defects for tailored performance in electronic, electrochemical, and quantum applications.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"40 7","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138600800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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