Photoluminescent (PL) properties of undoped nanocrystals of cadmium sulfide were investigated as a function of excitation power intensity. Room-temperature PL spectra of CdS nanocrystals grown from the gas phase revealed two emission bands: with peak positions at 510 nm (near-band-edge emission) and close to 690 nm (deep trap defects). Tunable photoluminescence of CdS nanocrystals with the exchange of the main radiative channel from relaxation through defect levels to direct near-band-edge relaxation with the change of the color was demonstrated. Nonlinear behavior of the intensities of near-band-edge and defect level emission lines as well as the blue shift of the peak of defect level emission are discussed and explained by the finite capacitance of the defect subzone in the forbidden gap. The origin of the red-light emission is due to native defects such as sulfur vacancies or twinning interfaces.
{"title":"Luminescent properties of cadmium sulfide nanocrystals grown from gas phase","authors":"A.B. Bogoslovska, D. Grynko, E. Bortchagovsky","doi":"10.15407/spqeo25.04.413","DOIUrl":"https://doi.org/10.15407/spqeo25.04.413","url":null,"abstract":"Photoluminescent (PL) properties of undoped nanocrystals of cadmium sulfide were investigated as a function of excitation power intensity. Room-temperature PL spectra of CdS nanocrystals grown from the gas phase revealed two emission bands: with peak positions at 510 nm (near-band-edge emission) and close to 690 nm (deep trap defects). Tunable photoluminescence of CdS nanocrystals with the exchange of the main radiative channel from relaxation through defect levels to direct near-band-edge relaxation with the change of the color was demonstrated. Nonlinear behavior of the intensities of near-band-edge and defect level emission lines as well as the blue shift of the peak of defect level emission are discussed and explained by the finite capacitance of the defect subzone in the forbidden gap. The origin of the red-light emission is due to native defects such as sulfur vacancies or twinning interfaces.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"116 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86267982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Comparative characterization of phosphorus diffusion from planar sources and liquid-phase diffusion by using PCl3 in technology for manufacturing silicon p-i-n photodiodes was carried out. The quantitative analysis of dislocations formed when using different variants and modes of diffusion has been performed. The influence of dislocation number on the dark current density and responsivity of photodetectors has been studied. A table has been given for estimation of surface resistance with account of colour inherent to phosphorosilicate glass after doping phosphorus into the surface layer.
{"title":"Diffusion of phosphorus in technology for manufacturing silicon p-i-n photodiodes","authors":"M. Kukurudziak","doi":"10.15407/spqeo25.04.385","DOIUrl":"https://doi.org/10.15407/spqeo25.04.385","url":null,"abstract":"Comparative characterization of phosphorus diffusion from planar sources and liquid-phase diffusion by using PCl3 in technology for manufacturing silicon p-i-n photodiodes was carried out. The quantitative analysis of dislocations formed when using different variants and modes of diffusion has been performed. The influence of dislocation number on the dark current density and responsivity of photodetectors has been studied. A table has been given for estimation of surface resistance with account of colour inherent to phosphorosilicate glass after doping phosphorus into the surface layer.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"59 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88298600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Presented in this paper is theoretical studying redistribution of electric charges in the layer of a tetragonal plate of yttrium-stabilized zirconia based on the position of yttrium atom in the crystal lattice for both dry and humid ambient atmosphere. The density functional theory with local density approximation (DFT-LDA) has been employed for this modelling. Calculations have been performed for layer-by-layer electron density distribution over the thickness of an infinite plate 001 of yttrium-stabilized tetragonal zirconium dioxide, which show that a change in the position of stabilizing yttrium atom and its symmetry in the layer leads to changing the total energy of zirconium dioxide both for the dry 001 surface and for the hydrated one. It has been ascertained that the surface charge density for the 001-surface of an infinite tetragonal zirconia plate increases in proportion to the degree of hydration.
{"title":"Characterization of adsorption properties inherent to zirconia dioxide for different positions of yttrium in the ZrO2–Y2O3 lattice","authors":"S.I. Lyubchykк, S.B. Lyubchykк, A.I. Lyubchykк","doi":"10.15407/spqeo25.04.362","DOIUrl":"https://doi.org/10.15407/spqeo25.04.362","url":null,"abstract":"Presented in this paper is theoretical studying redistribution of electric charges in the layer of a tetragonal plate of yttrium-stabilized zirconia based on the position of yttrium atom in the crystal lattice for both dry and humid ambient atmosphere. The density functional theory with local density approximation (DFT-LDA) has been employed for this modelling. Calculations have been performed for layer-by-layer electron density distribution over the thickness of an infinite plate 001 of yttrium-stabilized tetragonal zirconium dioxide, which show that a change in the position of stabilizing yttrium atom and its symmetry in the layer leads to changing the total energy of zirconium dioxide both for the dry 001 surface and for the hydrated one. It has been ascertained that the surface charge density for the 001-surface of an infinite tetragonal zirconia plate increases in proportion to the degree of hydration.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"38 4 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89148351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In core-shell nanowire radial p-n junction, spatial (along the radius) distribution of the injected carriers is determined not only by recombination falling of the non-equilibrium carrier concentration but also by specific falling due to cylindrical symmetry of the structure. This forces us to consider an effective diffusion length of non-equilibrium carriers in nanoscale radial structures. This effective diffusion length proves to be larger (up to 25%) than the diffusion length in usual planar p-n junction (made of the same material) under injection from the shell to the core and smaller than it (up to 60%) under injection from the core to the shell.
{"title":"Diffusion length of non-equilibrium current carriers in nanowire radial p-n junctions: Effect of the curvature","authors":"V. Borblik","doi":"10.15407/spqeo25.04.394","DOIUrl":"https://doi.org/10.15407/spqeo25.04.394","url":null,"abstract":"In core-shell nanowire radial p-n junction, spatial (along the radius) distribution of the injected carriers is determined not only by recombination falling of the non-equilibrium carrier concentration but also by specific falling due to cylindrical symmetry of the structure. This forces us to consider an effective diffusion length of non-equilibrium carriers in nanoscale radial structures. This effective diffusion length proves to be larger (up to 25%) than the diffusion length in usual planar p-n junction (made of the same material) under injection from the shell to the core and smaller than it (up to 60%) under injection from the core to the shell.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"4 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89373806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The concept of exciton implies a collective excited state able to travel in a particle-like fashion. Its size is determined by the radius of excited electron-hole pair and, although it may vary by two orders of magnitude, it is always spatially restricted, while its delocalization length owing to the exciton wavefunction spatial dynamics may provide even a larger scale of changes. In this work, the limitations of exciton sizes are discussed by analysis where the exciton concept is still applicable. It is shown that the exciton size can be as small as few angstroms, but even smaller sizes can be, probably, justified. At the same time, coupling of exciton to polariton mode can enlarge the exciton-polariton coherence length to values as high as 20 µm, thus extending the scale of possible exciton sizes up to five orders of magnitude.
{"title":"The exciton size. Where are the limits?","authors":"O. Dimitriev","doi":"10.15407/spqeo25.04.372","DOIUrl":"https://doi.org/10.15407/spqeo25.04.372","url":null,"abstract":"The concept of exciton implies a collective excited state able to travel in a particle-like fashion. Its size is determined by the radius of excited electron-hole pair and, although it may vary by two orders of magnitude, it is always spatially restricted, while its delocalization length owing to the exciton wavefunction spatial dynamics may provide even a larger scale of changes. In this work, the limitations of exciton sizes are discussed by analysis where the exciton concept is still applicable. It is shown that the exciton size can be as small as few angstroms, but even smaller sizes can be, probably, justified. At the same time, coupling of exciton to polariton mode can enlarge the exciton-polariton coherence length to values as high as 20 µm, thus extending the scale of possible exciton sizes up to five orders of magnitude.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"52 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90871010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
I. Donchev, T. Kavetskyy, O. Mushynska, O. Zubrytska, I.V. Briukhovetska, A. Pryima, H.Y. Kovalchuk, N. Hoivanovych, L. Kropyvnytska, Y. Pavlyshak, T. Skrobach, G. Kossak, V.I. Stakhiv, S. Monastyrska, A. Kiv
Being based on the known model of a cylindrical nanopore created using the classical method of molecular dynamics, we have studied the patterns of electrolyte flow passing through a nanocylinder, which is used to simulate an ion-induced track in a thin film. In this study, the nanotrack model takes into account the defect structure of the nanotracks inner surface. A model of a structural defect, which is an adsorption center for model particles passing through a nanocylinder, has been described. It was revealed the sensitivity of the electrolyte flux density to its composition, which is explained by interaction of particles passing through the nanocylinder with structural defects of its inner surface. This effect enables to create a biosensor system for detecting the low concentration of impurities of various types in liquid.
{"title":"Computer model of track biosensor","authors":"I. Donchev, T. Kavetskyy, O. Mushynska, O. Zubrytska, I.V. Briukhovetska, A. Pryima, H.Y. Kovalchuk, N. Hoivanovych, L. Kropyvnytska, Y. Pavlyshak, T. Skrobach, G. Kossak, V.I. Stakhiv, S. Monastyrska, A. Kiv","doi":"10.15407/spqeo25.04.441","DOIUrl":"https://doi.org/10.15407/spqeo25.04.441","url":null,"abstract":"Being based on the known model of a cylindrical nanopore created using the classical method of molecular dynamics, we have studied the patterns of electrolyte flow passing through a nanocylinder, which is used to simulate an ion-induced track in a thin film. In this study, the nanotrack model takes into account the defect structure of the nanotracks inner surface. A model of a structural defect, which is an adsorption center for model particles passing through a nanocylinder, has been described. It was revealed the sensitivity of the electrolyte flux density to its composition, which is explained by interaction of particles passing through the nanocylinder with structural defects of its inner surface. This effect enables to create a biosensor system for detecting the low concentration of impurities of various types in liquid.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"18 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80984248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
O. B. Okhrimenko, Y. Bacherikov, O. Kolomys, V. Strelchuk, R. Konakova
In this work, the authors have considered the effect of short-term nonthermal action of microwave radiation on the photoluminescent characteristics of SiC/por-SiC/Er2O3 and SiC/por-SiC structures. The analysis of photoluminescence spectra of these structures, which are excited by radiation with an energy lower than the band gap in the 4H-SiC crystalline substrate, has shown that short-term action of microwave radiation leads to redistribution of radiative recombination centers, which is caused by surface states in the por-SiC layer.
{"title":"Redistribution of centers responsible for radiative recombination in SiC/por-SiC and SiC/por-SiC/Er2O3 structures under nonthermal action of microwave radiation","authors":"O. B. Okhrimenko, Y. Bacherikov, O. Kolomys, V. Strelchuk, R. Konakova","doi":"10.15407/spqeo25.04.355","DOIUrl":"https://doi.org/10.15407/spqeo25.04.355","url":null,"abstract":"In this work, the authors have considered the effect of short-term nonthermal action of microwave radiation on the photoluminescent characteristics of SiC/por-SiC/Er2O3 and SiC/por-SiC structures. The analysis of photoluminescence spectra of these structures, which are excited by radiation with an energy lower than the band gap in the 4H-SiC crystalline substrate, has shown that short-term action of microwave radiation leads to redistribution of radiative recombination centers, which is caused by surface states in the por-SiC layer.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"44 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91526799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Sachenko, V. Kostylyov, R. Korkishko, V. Vlasiuk, I. Sokolovskyi, M. Evstigneev, O. Olikh, A. Shkrebtii, B. F. Dvernikov, V. V. Chernenko
Crystalline Silicon (c-Si) remains a dominant photovoltaic material in solar cell industry. Currently, scientific and technological advances enable producing the c-Si solar cells (SCs) efficiency close to the fundamental limit. Therefore, combining the experimental results and those of modeling becomes crucial to further progress in improving the efficiency and reducing the cost of photovoltaic systems. We carried out the experimental characterization of the highly-efficient c-Si SCs and compared with the results of modeling. For this purpose, we developed and applied to the samples under investigation the improved theoretical model to optimize characteristics of highly efficient textured solar cells. The model accounts for all recombination mechanisms, including nonradiative exciton recombination by the Auger mechanism via a deep recombination centers and recombination in the space-charge region. To compare the theoretical results with those of experiments, we proposed empirical formula for the external quantum efficiency (EQE), which describes its experimental spectral dependence near the long-wave absorption edge. The proposed approach allows modeling of the short-circuit current and photoconversion efficiency in the textured crystalline silicon solar cells. It has been ascertained that the dependences of the short-circuit current on the open-circuit voltage and the dark current on the applied voltage at V < 0.6 V coincide with each other. The theoretical results, as compared to the experimental ones, allowed us to validate the developed formalism, and were used to optimize the key parameters of SCs, such as the base thickness, doping level and others. In this work, we have further generalized and refined the analytical approach proposed and used by us earlier to analyze high-efficiency solar cells and model their characteristics.
{"title":"Experimental investigation and theoretical modeling of textured silicon solar cells with rear metallization","authors":"A. Sachenko, V. Kostylyov, R. Korkishko, V. Vlasiuk, I. Sokolovskyi, M. Evstigneev, O. Olikh, A. Shkrebtii, B. F. Dvernikov, V. V. Chernenko","doi":"10.15407/spqeo25.03.331","DOIUrl":"https://doi.org/10.15407/spqeo25.03.331","url":null,"abstract":"Crystalline Silicon (c-Si) remains a dominant photovoltaic material in solar cell industry. Currently, scientific and technological advances enable producing the c-Si solar cells (SCs) efficiency close to the fundamental limit. Therefore, combining the experimental results and those of modeling becomes crucial to further progress in improving the efficiency and reducing the cost of photovoltaic systems. We carried out the experimental characterization of the highly-efficient c-Si SCs and compared with the results of modeling. For this purpose, we developed and applied to the samples under investigation the improved theoretical model to optimize characteristics of highly efficient textured solar cells. The model accounts for all recombination mechanisms, including nonradiative exciton recombination by the Auger mechanism via a deep recombination centers and recombination in the space-charge region. To compare the theoretical results with those of experiments, we proposed empirical formula for the external quantum efficiency (EQE), which describes its experimental spectral dependence near the long-wave absorption edge. The proposed approach allows modeling of the short-circuit current and photoconversion efficiency in the textured crystalline silicon solar cells. It has been ascertained that the dependences of the short-circuit current on the open-circuit voltage and the dark current on the applied voltage at V < 0.6 V coincide with each other. The theoretical results, as compared to the experimental ones, allowed us to validate the developed formalism, and were used to optimize the key parameters of SCs, such as the base thickness, doping level and others. In this work, we have further generalized and refined the analytical approach proposed and used by us earlier to analyze high-efficiency solar cells and model their characteristics.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"7 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86244414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The theory of spin-orbit interaction, developed by E.I. Rashba more than 30 years ago, stimulated the rapid development of a new discipline – spintronics – the physics of processes and devices based on the control of spins. The paper summarizes achievements of Prof. Rashba in the early stage of his scientific researches, particularly those, which were performed in Ukraine. Among them, prediction of electric dipole spin resonance (EDSR), phase transitions in spin-orbit coupled systems driven by change of the Fermi surface topology, giant oscillator strength of impurity excitons, and coexistence of free and self-trapped excitons. Solid state physics is the basis of contemporary electronics and optoelectronics. Various electronic, optical, acoustical and other effects and processes in solid define performances of modern solid state devices. Multitude of groups and thousands researchers are involved in discovering, study and using relevant new phenomena. Among them, Professor Emmanuel Rashba with his outstanding results in physics of crystals is seen (rises) as a profound personality. His contribution in almost all branches of solid state physics cannot be exaggerated, some of his results have found important applications. Prof. E.I. Rashba is known as one of the leading theorists in Ukraine, in Soviet Union, and he continued the successful career in United States. Although many years have already passed, scientific community in Ukraine remembers Prof. E.I. Rashba and thankfully appreciates his impact to formation of condensed matter researches in our country. This short text is devoted to Prof. E.I. Rashba and is written on the occasion of his birthday.
{"title":"To 95-th birthday of Professor E.I. Rashba (looking back ones again)","authors":"V. Kochelap, A. Belyaev","doi":"10.15407/spqeo25.03.235","DOIUrl":"https://doi.org/10.15407/spqeo25.03.235","url":null,"abstract":"The theory of spin-orbit interaction, developed by E.I. Rashba more than 30 years ago, stimulated the rapid development of a new discipline – spintronics – the physics of processes and devices based on the control of spins. The paper summarizes achievements of Prof. Rashba in the early stage of his scientific researches, particularly those, which were performed in Ukraine. Among them, prediction of electric dipole spin resonance (EDSR), phase transitions in spin-orbit coupled systems driven by change of the Fermi surface topology, giant oscillator strength of impurity excitons, and coexistence of free and self-trapped excitons. Solid state physics is the basis of contemporary electronics and optoelectronics. Various electronic, optical, acoustical and other effects and processes in solid define performances of modern solid state devices. Multitude of groups and thousands researchers are involved in discovering, study and using relevant new phenomena. Among them, Professor Emmanuel Rashba with his outstanding results in physics of crystals is seen (rises) as a profound personality. His contribution in almost all branches of solid state physics cannot be exaggerated, some of his results have found important applications. Prof. E.I. Rashba is known as one of the leading theorists in Ukraine, in Soviet Union, and he continued the successful career in United States. Although many years have already passed, scientific community in Ukraine remembers Prof. E.I. Rashba and thankfully appreciates his impact to formation of condensed matter researches in our country. This short text is devoted to Prof. E.I. Rashba and is written on the occasion of his birthday.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"7 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88567059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
N. Raheem, A. Taher, A. I. Alanssari, V. Pyliavskyi, B. S. Bashar, M.M. Ismail
This work is devoted to the study of the possibility to use color perception models for processing streaming videos. The paper describes the principles of the control of image parameters which depend on the image adaptive properties. Methods for obtaining adaptive parameters such as brightness of adaptation, brightness of stimulus and brightness of background, as well as observation conditions are described. The CAM16 color perception model is accepted as the main one as well as the ZCAM and CAM20u models as the promising ones. The usability of color perception models is estimated, namely, the change of color rendering vector is assessed. It is shown that the chromaticity points that make up the color tone lines have a different nature of change – slope, shape. The estimates of the dependence of transmitted colors on lightness are provided. It is demonstrated that the lightness parameter is more non-linear character CAM20u as compared to the previous models.
{"title":"Color appearance models CAM16, ZCAM and CAM20u for video applications","authors":"N. Raheem, A. Taher, A. I. Alanssari, V. Pyliavskyi, B. S. Bashar, M.M. Ismail","doi":"10.15407/spqeo25.03.342","DOIUrl":"https://doi.org/10.15407/spqeo25.03.342","url":null,"abstract":"This work is devoted to the study of the possibility to use color perception models for processing streaming videos. The paper describes the principles of the control of image parameters which depend on the image adaptive properties. Methods for obtaining adaptive parameters such as brightness of adaptation, brightness of stimulus and brightness of background, as well as observation conditions are described. The CAM16 color perception model is accepted as the main one as well as the ZCAM and CAM20u models as the promising ones. The usability of color perception models is estimated, namely, the change of color rendering vector is assessed. It is shown that the chromaticity points that make up the color tone lines have a different nature of change – slope, shape. The estimates of the dependence of transmitted colors on lightness are provided. It is demonstrated that the lightness parameter is more non-linear character CAM20u as compared to the previous models.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"2 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89981650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：