V. Bartošová, R. Smolková, L. Grishchenko, R. Linnik, Vladyslav V. Lisnyak, R. Mariychuk
Here, we present a facile and environmentally friendly method for the synthesis of gold nanoparticles (Au NPs) with an infrared response. The structure of the obtained Au NPs was investigated by transmission electron microscopy. Small and large Au NPs with different morphologies, including spheres, triangles, and hexagons, were imaged and studied, and the reasons for the morphological diversity were discussed. From the selected area diffraction data, the Au NPs showed sufficient crystallinity. The optical properties of the Au nanocolloids, investigated by UV-visible absorption spectroscopy, confirmed the presence of localized surface plasmon resonance (LSPR) peaks at 500…540 nm for Au NPs smaller than 30 nm. An increase in absorption intensity in the 600…1050 nm region indicates the formation of larger non-spherical Au NPs. The optical absorption spectra show the redshift of the second LSPR peak to the near-infrared region with a longer wavelength with increasing HAuCl4 concentration in the synthesis solution. In addition, we recorded the maxima of photoluminescence (PL) bands at 370 and 458 nm for the water-diluted Au colloids under 320 nm excitation and considered the possible reasons for PL. Attempts were made to elucidate the optical and PL behavior of the nanocolloids within the known models
{"title":"The spectral and microscopical study of phytosynthesized plasmonic gold nanoparticles","authors":"V. Bartošová, R. Smolková, L. Grishchenko, R. Linnik, Vladyslav V. Lisnyak, R. Mariychuk","doi":"10.15407/spqeo26.02.208","DOIUrl":"https://doi.org/10.15407/spqeo26.02.208","url":null,"abstract":"Here, we present a facile and environmentally friendly method for the synthesis of gold nanoparticles (Au NPs) with an infrared response. The structure of the obtained Au NPs was investigated by transmission electron microscopy. Small and large Au NPs with different morphologies, including spheres, triangles, and hexagons, were imaged and studied, and the reasons for the morphological diversity were discussed. From the selected area diffraction data, the Au NPs showed sufficient crystallinity. The optical properties of the Au nanocolloids, investigated by UV-visible absorption spectroscopy, confirmed the presence of localized surface plasmon resonance (LSPR) peaks at 500…540 nm for Au NPs smaller than 30 nm. An increase in absorption intensity in the 600…1050 nm region indicates the formation of larger non-spherical Au NPs. The optical absorption spectra show the redshift of the second LSPR peak to the near-infrared region with a longer wavelength with increasing HAuCl4 concentration in the synthesis solution. In addition, we recorded the maxima of photoluminescence (PL) bands at 370 and 458 nm for the water-diluted Au colloids under 320 nm excitation and considered the possible reasons for PL. Attempts were made to elucidate the optical and PL behavior of the nanocolloids within the known models","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"9 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89563012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The paper presents a method for fast calculating the electronic states in two-dimensional quantum structures based on AIIIBV nitrides. The method is based on the representation of electronic states in the form of a linear combination of bulk wave functions of materials, from which quantum structures are made. The parameters and criteria for the selection of bulk wave functions that provides fast convergence of the numerical procedures for calculating the eigenvalues of the quantum Hamiltonian have been considered. The results of the calculations have been given both for one polar InGaN/GaN quantum well and for a system of several quantum wells. Being based on the full band structure of AIIIBV nitrides with a wurtzite-type crystal lattice, the proposed approach takes into account the states far from the center of the Brillouin zone, while preserving the computational efficiency of traditional methods of envelope function in approximating the effective mass.
{"title":"A method for fast calculating the electronic states in 2D quantum structures based on AIIIBV nitrides","authors":"V. A. Slipokurov, P. Korniychuk, A. Zinovchuk","doi":"10.15407/spqeo26.02.165","DOIUrl":"https://doi.org/10.15407/spqeo26.02.165","url":null,"abstract":"The paper presents a method for fast calculating the electronic states in two-dimensional quantum structures based on AIIIBV nitrides. The method is based on the representation of electronic states in the form of a linear combination of bulk wave functions of materials, from which quantum structures are made. The parameters and criteria for the selection of bulk wave functions that provides fast convergence of the numerical procedures for calculating the eigenvalues of the quantum Hamiltonian have been considered. The results of the calculations have been given both for one polar InGaN/GaN quantum well and for a system of several quantum wells. Being based on the full band structure of AIIIBV nitrides with a wurtzite-type crystal lattice, the proposed approach takes into account the states far from the center of the Brillouin zone, while preserving the computational efficiency of traditional methods of envelope function in approximating the effective mass.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"49 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85573666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Garbovskiy, P. Kopčanský, O. Kovalchuk, T. Kovalchuk, L. V. Volokh
In this paper, the effects of SOR5, SOR10, and SOR15 nanoimpurities on the value of the ionic conductivity of the homeotropically aligned nematic liquid crystal 6CB are reported. Electrical measurements are carried out within a wide frequency range (from 6 Hz to 106 Hz) at room temperature (293 K). The largest changes in the electrical conductivity occur in the low-frequency range (less than 103 Hz) and depend on the type of nanoimpurity and on its concentration. Despite the similarity in the chemical composition of SOR5, SOR10, and SOR15, the measured dependences of the electrical conductivity of the studied samples on the concentration of nanoimpurities are substantially different. In the case of the SOR10 impurity, the ionic component of the electrical conductivity depends on the concentration of SOR10 according to a power law with an exponent approximately equal to 0.5, which is typical for the bimolecular recombination of charge carriers (i.e., the behavior of a weak electrolyte). Liquid crystal samples containing SOR5 and SOR15 nanoimpurities behave in a similar way in a low concentration region (between 0.01 and 0.05 mass %). Interestingly, further increase in the concentration of nanodopants (>0.05 mass %) results in a dramatically different behavior. The electrical conductivity of liquid crystals doped with SOR5 undergoes a sharp increase whereas the electrical conductivity of samples containing SOR15 decreases.
{"title":"Peculiarities of the effect of different types of SOR nanoimpurities on the value of ionic component of the electrical conductivity of the homeotropically aligned nematic liquid crystal 6 СВ","authors":"Y. Garbovskiy, P. Kopčanský, O. Kovalchuk, T. Kovalchuk, L. V. Volokh","doi":"10.15407/spqeo26.02.173","DOIUrl":"https://doi.org/10.15407/spqeo26.02.173","url":null,"abstract":"In this paper, the effects of SOR5, SOR10, and SOR15 nanoimpurities on the value of the ionic conductivity of the homeotropically aligned nematic liquid crystal 6CB are reported. Electrical measurements are carried out within a wide frequency range (from 6 Hz to 106 Hz) at room temperature (293 K). The largest changes in the electrical conductivity occur in the low-frequency range (less than 103 Hz) and depend on the type of nanoimpurity and on its concentration. Despite the similarity in the chemical composition of SOR5, SOR10, and SOR15, the measured dependences of the electrical conductivity of the studied samples on the concentration of nanoimpurities are substantially different. In the case of the SOR10 impurity, the ionic component of the electrical conductivity depends on the concentration of SOR10 according to a power law with an exponent approximately equal to 0.5, which is typical for the bimolecular recombination of charge carriers (i.e., the behavior of a weak electrolyte). Liquid crystal samples containing SOR5 and SOR15 nanoimpurities behave in a similar way in a low concentration region (between 0.01 and 0.05 mass %). Interestingly, further increase in the concentration of nanodopants (>0.05 mass %) results in a dramatically different behavior. The electrical conductivity of liquid crystals doped with SOR5 undergoes a sharp increase whereas the electrical conductivity of samples containing SOR15 decreases.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"103 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74264766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Sachenko, V. Kostylyov, V. Vlasiuk, I. Sokolovskyi, M. Evstigneev, D.F. Dvernikov, R. Korkishko, V. V. Chernenko
An expression for finding the dependence of narrowing the bands in silicon ΔEg on the level of illumination from the intrinsic absorption band (or short-circuit current) has been proposed. This expression is used to find experimental values of ΔEg in high-efficient silicon solar cells. The dependence ΔEg (J) or dependence ΔEg (JI), where JI is the short-circuit current density, has been rebuilt into the ΔEg (ΔnOC) dependence, where ΔnOC is the excitation level in open-circuit conditions. With this aim, the generation-recombination balance equation was solved taking into account six recombination mechanisms in silicon, including Shockley–Reed–Hall recombination, radiative recombination, interband Auger recombination, surface recombination, non-radiative exciton recombination, and recombination in the space charge region. The latter two recombination terms are not taken into account in studies of the key parameters of silicon solar cells and in programs for simulating the characteristics of these solar cells. Therefore, in this work their correct definition was performed, their contribution was compared with the contribution of other recombination mechanisms, and it has been shown that the description of the characteristics and key parameters of silicon SC without taking them into account is insufficiently correct. The experimental dependences ΔEg (ΔnOC) obtained in the work were compared with Schenk’s theory. It has been shown that there is a good agreement between them.
{"title":"Space charge region recombination, non-radiative exciton recombination and the band-narrowing effect in high-efficiency silicon solar cells","authors":"A. Sachenko, V. Kostylyov, V. Vlasiuk, I. Sokolovskyi, M. Evstigneev, D.F. Dvernikov, R. Korkishko, V. V. Chernenko","doi":"10.15407/spqeo26.02.127","DOIUrl":"https://doi.org/10.15407/spqeo26.02.127","url":null,"abstract":"An expression for finding the dependence of narrowing the bands in silicon ΔEg on the level of illumination from the intrinsic absorption band (or short-circuit current) has been proposed. This expression is used to find experimental values of ΔEg in high-efficient silicon solar cells. The dependence ΔEg (J) or dependence ΔEg (JI), where JI is the short-circuit current density, has been rebuilt into the ΔEg (ΔnOC) dependence, where ΔnOC is the excitation level in open-circuit conditions. With this aim, the generation-recombination balance equation was solved taking into account six recombination mechanisms in silicon, including Shockley–Reed–Hall recombination, radiative recombination, interband Auger recombination, surface recombination, non-radiative exciton recombination, and recombination in the space charge region. The latter two recombination terms are not taken into account in studies of the key parameters of silicon solar cells and in programs for simulating the characteristics of these solar cells. Therefore, in this work their correct definition was performed, their contribution was compared with the contribution of other recombination mechanisms, and it has been shown that the description of the characteristics and key parameters of silicon SC without taking them into account is insufficiently correct. The experimental dependences ΔEg (ΔnOC) obtained in the work were compared with Schenk’s theory. It has been shown that there is a good agreement between them.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"18 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88838896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Malakhovska, A. Pogodin, M. Filep, Y. Studenyak, O. Kokhan, O. Zubaka, V. Izai, P. Kúš
Samples of Ag7+x(P1–xGex)S6 (x = 0, 0.1, 0.25, 0.33, 0.5, 0.75, 1.0) solid solutions were obtained in the form of microcrystalline powders by grinding in an agate mortar. The diffuse reflectance spectra of the obtained Ag7+x(P1–xGex)S6 samples were studied in the spectral range 200 to 1400 nm at 293 K. The spectral dependences were analyzed using multilevel approximation by applying the Kubelka–Munk function and the Tauc method. It has been found that for Ag7+x(P1 xGex)S6 solid solutions, a red shift of the reflection edge beginning is observed with increasing the Ge content. The pseudo-gap values of Ag7+x(P1–xGex)S6 solid solutions was estimated by the Tauc method. It was found that the heterovalent cationic substitution P+5 → Ge+4 within the anionic sublattice leads to a monotonic nonlinear decrease in the pseudo-gap values.
{"title":"Diffuse reflectance spectroscopy of solid solutions in the Ag7PS6-Ag8GeS6 system","authors":"T. Malakhovska, A. Pogodin, M. Filep, Y. Studenyak, O. Kokhan, O. Zubaka, V. Izai, P. Kúš","doi":"10.15407/spqeo26.02.152","DOIUrl":"https://doi.org/10.15407/spqeo26.02.152","url":null,"abstract":"Samples of Ag7+x(P1–xGex)S6 (x = 0, 0.1, 0.25, 0.33, 0.5, 0.75, 1.0) solid solutions were obtained in the form of microcrystalline powders by grinding in an agate mortar. The diffuse reflectance spectra of the obtained Ag7+x(P1–xGex)S6 samples were studied in the spectral range 200 to 1400 nm at 293 K. The spectral dependences were analyzed using multilevel approximation by applying the Kubelka–Munk function and the Tauc method. It has been found that for Ag7+x(P1 xGex)S6 solid solutions, a red shift of the reflection edge beginning is observed with increasing the Ge content. The pseudo-gap values of Ag7+x(P1–xGex)S6 solid solutions was estimated by the Tauc method. It was found that the heterovalent cationic substitution P+5 → Ge+4 within the anionic sublattice leads to a monotonic nonlinear decrease in the pseudo-gap values.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"42 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90305578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Huseynzada, A. Mammadli, K. Isayev, J. Naghiyev, M. Holik, V. Tryshyn, S. Lyubchyk, D. Pekur
Recent progress in the field of scintillators and silicon photomultipliers (SiPM) has allowed development of new scintillation detectors capable of detecting low-energy X- and gamma-ray sources that are widely used in medicine, security and industry. Such scintillation detectors are compact, insensitive to magnetic fields, have low operation voltages and are functional at room temperature. These advantages of SiPM are considered to solve the main problems facing scintillation detectors in medicine and industry today. Development of detectors of low-energy electromagnetic radiation is relevant now. Scintillation detectors based on lutetium fine silicate, LaBr3(Ce), NaI and silicon avalanche photomultipliers offer a great potential for use for X- and gamma-ray detection. The present work demonstrates the gamma-ray detection performance of a new micropixel avalanche photodiode (MAPD) array (16 (4×4) elements – 15×15 cm) with a LaBr3(Ce) scintillator (15×15×30 mm) using 177Lu and 133Ba isotopes as the gamma-ray sources.
{"title":"Study of low-energy gamma-ray detection performance of silicon photomultiplier with LaBr3(Ce) scintillator","authors":"K. Huseynzada, A. Mammadli, K. Isayev, J. Naghiyev, M. Holik, V. Tryshyn, S. Lyubchyk, D. Pekur","doi":"10.15407/spqeo26.02.236","DOIUrl":"https://doi.org/10.15407/spqeo26.02.236","url":null,"abstract":"Recent progress in the field of scintillators and silicon photomultipliers (SiPM) has allowed development of new scintillation detectors capable of detecting low-energy X- and gamma-ray sources that are widely used in medicine, security and industry. Such scintillation detectors are compact, insensitive to magnetic fields, have low operation voltages and are functional at room temperature. These advantages of SiPM are considered to solve the main problems facing scintillation detectors in medicine and industry today. Development of detectors of low-energy electromagnetic radiation is relevant now. Scintillation detectors based on lutetium fine silicate, LaBr3(Ce), NaI and silicon avalanche photomultipliers offer a great potential for use for X- and gamma-ray detection. The present work demonstrates the gamma-ray detection performance of a new micropixel avalanche photodiode (MAPD) array (16 (4×4) elements – 15×15 cm) with a LaBr3(Ce) scintillator (15×15×30 mm) using 177Lu and 133Ba isotopes as the gamma-ray sources.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"6 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90181810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Zelenska, S. Zelensky, O. S. Kolesnik, T. Aoki, P. Teselko
Thermal emission is an informative tool to study materials’ properties at high temperatures under laser irradiation. The kinetics decay of laser-induced thermal emission from carbon microparticles deposited on heat-sink surfaces of transparent dielectrics (glass and sapphire) was studied. A Q-switched YAG:Nd3+ laser (pulse duration τi = 20 ns, energy/power density 0.5 J·cm–2, 25 MW·cm–2) was employed to excite thermal emission. In calculations, the classical heat conduction equation was used. With increasing the thermal conductivity of substrate (from glass to sapphire), reduction in the emission pulse duration has been observed.
{"title":"Laser-induced thermal emission of carbon microparticles on transparent heat-sink substrates","authors":"K. Zelenska, S. Zelensky, O. S. Kolesnik, T. Aoki, P. Teselko","doi":"10.15407/spqeo26.02.201","DOIUrl":"https://doi.org/10.15407/spqeo26.02.201","url":null,"abstract":"Thermal emission is an informative tool to study materials’ properties at high temperatures under laser irradiation. The kinetics decay of laser-induced thermal emission from carbon microparticles deposited on heat-sink surfaces of transparent dielectrics (glass and sapphire) was studied. A Q-switched YAG:Nd3+ laser (pulse duration τi = 20 ns, energy/power density 0.5 J·cm–2, 25 MW·cm–2) was employed to excite thermal emission. In calculations, the classical heat conduction equation was used. With increasing the thermal conductivity of substrate (from glass to sapphire), reduction in the emission pulse duration has been observed.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72696315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Onyshchenko, L. Karachevtseva, K. Andrieieva, N. Dmytruk, A. Z. Evmenova
The kinetics of charge carriers in bilateral macroporous silicon with macroporous layers of equal thicknesses is calculated by the finite difference method. A diffusion equation for a monocrystalline substrate and macroporous layers is solved. The boundary conditions are defined at the boundaries between the monocrystalline substrate and the macroporous silicon layers on both sides. Stationary distribution of excess charge carriers in the bilateral macroporous silicon with the macroporous layers of equal thicknesses calculated by the finite difference method is set as the initial condition. Under stationary conditions, excess charge carriers are generated by light with the wavelengths of 0.95 µm and 1.05 µm. It is shown that at the counting times much longer than the relaxation time, all the distributions of the concentration of excess minority carriers generated by light with any wavelength approach the same distribution with exponentially decreasing value.
{"title":"Kinetics of charge carriers in bilateral macroporous silicon","authors":"V. Onyshchenko, L. Karachevtseva, K. Andrieieva, N. Dmytruk, A. Z. Evmenova","doi":"10.15407/spqeo26.02.159","DOIUrl":"https://doi.org/10.15407/spqeo26.02.159","url":null,"abstract":"The kinetics of charge carriers in bilateral macroporous silicon with macroporous layers of equal thicknesses is calculated by the finite difference method. A diffusion equation for a monocrystalline substrate and macroporous layers is solved. The boundary conditions are defined at the boundaries between the monocrystalline substrate and the macroporous silicon layers on both sides. Stationary distribution of excess charge carriers in the bilateral macroporous silicon with the macroporous layers of equal thicknesses calculated by the finite difference method is set as the initial condition. Under stationary conditions, excess charge carriers are generated by light with the wavelengths of 0.95 µm and 1.05 µm. It is shown that at the counting times much longer than the relaxation time, all the distributions of the concentration of excess minority carriers generated by light with any wavelength approach the same distribution with exponentially decreasing value.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"39 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81694368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Kidalov, A. Dyadenchuk, V. Baturin, O. Karpenko, O. Kolomys, V. V. Ponomarenko, Z. Maksimenko, V. Strelchuk, Y. Bacherikov, O. B. Okhrimenko
Reactive magnetron sputtering was used to obtain ZnO films on SiC/porous Si/Si substrates. The silicon carbide film on the surface of porous Si was obtained using chemical substitution of atoms. It has been shown that ZnO films grown at the partial oxygen pressure 0.6 Pa are characterized by a smoother and more uniform surface than coatings grown at the oxygen pressure 0.1 Pa. Being based on the analysis of Raman and photoluminescence spectra, it has been shown that the increase in partial pressure of oxygen leads to the increase in structural disorder of the ZnO crystal lattice, on the one hand, and at the same time to a decrease in the concentration of intrinsic defects, including ionized oxygen vacancies Oi, on the other hand.
{"title":"Formation of ZnO films on SiC/porous Si/Si substrates","authors":"V. Kidalov, A. Dyadenchuk, V. Baturin, O. Karpenko, O. Kolomys, V. V. Ponomarenko, Z. Maksimenko, V. Strelchuk, Y. Bacherikov, O. B. Okhrimenko","doi":"10.15407/spqeo26.02.140","DOIUrl":"https://doi.org/10.15407/spqeo26.02.140","url":null,"abstract":"Reactive magnetron sputtering was used to obtain ZnO films on SiC/porous Si/Si substrates. The silicon carbide film on the surface of porous Si was obtained using chemical substitution of atoms. It has been shown that ZnO films grown at the partial oxygen pressure 0.6 Pa are characterized by a smoother and more uniform surface than coatings grown at the oxygen pressure 0.1 Pa. Being based on the analysis of Raman and photoluminescence spectra, it has been shown that the increase in partial pressure of oxygen leads to the increase in structural disorder of the ZnO crystal lattice, on the one hand, and at the same time to a decrease in the concentration of intrinsic defects, including ionized oxygen vacancies Oi, on the other hand.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"185 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77683125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The phenomenon of directed motion of mobile charged point defects in semiconductor structures under action of magnetic fields has been discussed. The features of defect drift in sign-changing magnetic fields have been studied. The effect of directional movement of charged defects under the combined action of constant and alternating magnetic fields has been analyzed. Analytical relations have been presented for the drift rate of defects in semiconductor structures under given impacts.
{"title":"Transformation of defects in semiconductor structures under action of magnetic fields stimulated by drift phenomena","authors":"G. Milenin, R. Redko","doi":"10.15407/spqeo26.02.147","DOIUrl":"https://doi.org/10.15407/spqeo26.02.147","url":null,"abstract":"The phenomenon of directed motion of mobile charged point defects in semiconductor structures under action of magnetic fields has been discussed. The features of defect drift in sign-changing magnetic fields have been studied. The effect of directional movement of charged defects under the combined action of constant and alternating magnetic fields has been analyzed. Analytical relations have been presented for the drift rate of defects in semiconductor structures under given impacts.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"9 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77730816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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