Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189232
T. Ito, S. Hijiya, H. Ishikawa, M. Shinoda
Writing and erasing voltages of an electrically alterable nonvolatile memory (EAROM) have been decreased to 10 volts by employing a silicon nitride film grown by directly thermal nitridation of a silicon substrate as the first insulating layer of a stacked-gate structure. Memory retention, writing and erasing repetition, continuous reading-out and programing time have been excellently improved when these are compared with conventional erasable programable ROMs.
{"title":"10 V Write/Erase, EAROM cells with directly nitrided silicon nitride films as first insulating layers","authors":"T. Ito, S. Hijiya, H. Ishikawa, M. Shinoda","doi":"10.1109/IEDM.1977.189232","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189232","url":null,"abstract":"Writing and erasing voltages of an electrically alterable nonvolatile memory (EAROM) have been decreased to 10 volts by employing a silicon nitride film grown by directly thermal nitridation of a silicon substrate as the first insulating layer of a stacked-gate structure. Memory retention, writing and erasing repetition, continuous reading-out and programing time have been excellently improved when these are compared with conventional erasable programable ROMs.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116444915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189190
W.H.-L. Ma, T. Ma
A method for the removal of fast surface states, slow states and fixed charge in various MIS structures is described. This radio-frequency (RF) annealing process is done in a 13.56 MHz capacitively-coupled plasma etcher/ stripper. This technique has proven to be more effective than the conventional thermal annealing process, and has been used to successfully eliminate undesirable radiation effects induced by E-beam, electron gun metallization, or reactive ion etching exposure in MIS structures. The temperature during the annealing process is estimated to be less than 340°C. Necessary conditions of the annealing process are detailed, and an annealing mechanism is postulated.
{"title":"RF annealing: A method of removing radiation damage in MIS structures","authors":"W.H.-L. Ma, T. Ma","doi":"10.1109/IEDM.1977.189190","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189190","url":null,"abstract":"A method for the removal of fast surface states, slow states and fixed charge in various MIS structures is described. This radio-frequency (RF) annealing process is done in a 13.56 MHz capacitively-coupled plasma etcher/ stripper. This technique has proven to be more effective than the conventional thermal annealing process, and has been used to successfully eliminate undesirable radiation effects induced by E-beam, electron gun metallization, or reactive ion etching exposure in MIS structures. The temperature during the annealing process is estimated to be less than 340°C. Necessary conditions of the annealing process are detailed, and an annealing mechanism is postulated.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114489238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189216
H. Jory, F. Friedlander, S. J. Hegji, J. Shively, R. Symons
The gyrotron is a new type of micrwave tube capable of producing high power output at millimeter wavelengths. Oscillator results have been described in recent Soviet publications This paper describes work in progress at Varian Associates, Inc. to develop an amplifier of the gyroklystron type to deliver 200 kW cw at 28 GHz. Considerable progress has been made with amplifier stability to the point that amplifier gains of up to 40 dB have been measured in a pulsed experimental amplifier. Current effort is concerned with improving efficiency. A pulsed oscillator is also described which produced 248 kW peak power at 28 GHz with 34% efficiency. A cw oscillator is under construction. Areas for future R and D are discussed. These include gyro-TWT amplifiers with increased instantaneous bandwidth (5 to 10%) and operation at harmonics of the cyclotron frequency to reduce the magnetic field requirements.
{"title":"Gyrotrons for high power millimeter wave generation","authors":"H. Jory, F. Friedlander, S. J. Hegji, J. Shively, R. Symons","doi":"10.1109/IEDM.1977.189216","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189216","url":null,"abstract":"The gyrotron is a new type of micrwave tube capable of producing high power output at millimeter wavelengths. Oscillator results have been described in recent Soviet publications This paper describes work in progress at Varian Associates, Inc. to develop an amplifier of the gyroklystron type to deliver 200 kW cw at 28 GHz. Considerable progress has been made with amplifier stability to the point that amplifier gains of up to 40 dB have been measured in a pulsed experimental amplifier. Current effort is concerned with improving efficiency. A pulsed oscillator is also described which produced 248 kW peak power at 28 GHz with 34% efficiency. A cw oscillator is under construction. Areas for future R and D are discussed. These include gyro-TWT amplifiers with increased instantaneous bandwidth (5 to 10%) and operation at harmonics of the cyclotron frequency to reduce the magnetic field requirements.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124755124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189308
R. Jerdonek, W. Bandy, H. Lin
The purpose of this paper is to determine the dependence of electron mobility increase upon gate potential for the n-channel deep-depletion SOS/MOSFET operating in weak accumulation. This is accomplished by analyzing the unique depth dependence of the carrier mobility in thin SOS films and by characterizing the thickness of the accumulation layer as a function of gate potential. The thickness calculation is simplified with the aid of a closed form approximation for the transcendental relationship between gate and surface potentials. Comparison to device conductance data shows that our theoretical model is accurate.
{"title":"Weak accumulation operation of the N-channel deep-depletion SOS/MOSFET","authors":"R. Jerdonek, W. Bandy, H. Lin","doi":"10.1109/IEDM.1977.189308","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189308","url":null,"abstract":"The purpose of this paper is to determine the dependence of electron mobility increase upon gate potential for the n-channel deep-depletion SOS/MOSFET operating in weak accumulation. This is accomplished by analyzing the unique depth dependence of the carrier mobility in thin SOS films and by characterizing the thickness of the accumulation layer as a function of gate potential. The thickness calculation is simplified with the aid of a closed form approximation for the transcendental relationship between gate and surface potentials. Comparison to device conductance data shows that our theoretical model is accurate.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"188 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116196822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189296
P. H. Lee, M. Wauk, W. Benzing
A thin epitaxial layer over a high concentration arsenic buried layer aids design of higher speed I2L, bipolar, VMOS, and linear devices. A new low pressure (40 torr) epitaxial process has been developed in cylindrical production reactors. N- epitaxial layers (1014-1015) have been fabricated over N+ arsenic buried layers (1019-1021). Profiles ofithe N/N+ transition widths off 2 micron thick epitaxial layers have been analyzed with spreading resistance techniques. Device characteristics are shown to indicate that the process produces device quality epitaxy. Low pressure conditions lower the arsenic autodoping from the buried layers, both vertically and laterally between buried layer wells. The low pressure epitaxial process is a new tool to grow higher resistivity layers with sharper N/N+ transition widths.
{"title":"Sharper N/N + profiles over arsenic buried layers using low pressure epitaxy","authors":"P. H. Lee, M. Wauk, W. Benzing","doi":"10.1109/IEDM.1977.189296","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189296","url":null,"abstract":"A thin epitaxial layer over a high concentration arsenic buried layer aids design of higher speed I2L, bipolar, VMOS, and linear devices. A new low pressure (40 torr) epitaxial process has been developed in cylindrical production reactors. N- epitaxial layers (1014-1015) have been fabricated over N+ arsenic buried layers (1019-1021). Profiles ofithe N/N+ transition widths off 2 micron thick epitaxial layers have been analyzed with spreading resistance techniques. Device characteristics are shown to indicate that the process produces device quality epitaxy. Low pressure conditions lower the arsenic autodoping from the buried layers, both vertically and laterally between buried layer wells. The low pressure epitaxial process is a new tool to grow higher resistivity layers with sharper N/N+ transition widths.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116480371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189289
J. Escher, P. Gregory, S. Hyder, Y. Houng, G. Antypas
Experimental photoemission data are presented on a new type of bias-assisted photocathode employing the transferred-electron effect. The cathodes are heterostructures employing lattice-matched InP-InGaAsP alloys. Reflection mode yields up to 1.0% out to 1.7-micron threshold have been achieved in an ultra-high vacuum experimental photoemission system.
{"title":"Bias-assisted photoemission in the 1-2 micron range","authors":"J. Escher, P. Gregory, S. Hyder, Y. Houng, G. Antypas","doi":"10.1109/IEDM.1977.189289","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189289","url":null,"abstract":"Experimental photoemission data are presented on a new type of bias-assisted photocathode employing the transferred-electron effect. The cathodes are heterostructures employing lattice-matched InP-InGaAsP alloys. Reflection mode yields up to 1.0% out to 1.7-micron threshold have been achieved in an ultra-high vacuum experimental photoemission system.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124320053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189184
H. Seunik, F. Gross, F. Weinzierl
A PPM focused traveling-wave tube for upper Q-band (40 to 50 GHz) has been developed. The tube delivers an CW output power of more than 400 W over a 5 percent bandwidth. The overall efficiency with a single-stage depressed collector exceeds 14 %.
{"title":"High power CW PPM-focused TWT for upper Q-band","authors":"H. Seunik, F. Gross, F. Weinzierl","doi":"10.1109/IEDM.1977.189184","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189184","url":null,"abstract":"A PPM focused traveling-wave tube for upper Q-band (40 to 50 GHz) has been developed. The tube delivers an CW output power of more than 400 W over a 5 percent bandwidth. The overall efficiency with a single-stage depressed collector exceeds 14 %.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"146 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125700823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189168
L. T. Todd, C.J. Starkey
A projection cathodochromic CRT (CCRT) has been developed that employs sodalite as the cathodochromic material. The construction of the CCRT is similar to that of the Advent Light Guide projection television tube. Images are written at one electron beam exposure and erased at a higher exposure that heats the screen material above its erase threshold. The optical configuration allows the projection of an image that is written on the cathodochromic screen surface nearest the electron gun. Compared to a conventional CCRT where the image appears on the surface most distant from the electron gun, the Light Guide optical arrangement offers distinct advantages of higher resolution, higher contrast, improved erasure quality, shorter erase time, and longer device lifetime. Over 8000, 9×7 dot matrix characters or detailed graphics can be displayed on a 6'-diagonal image screen with a white-area brightness of 300 fL and a contrast ratio in excess of 6:1. Characters can be written at a rate of 240 per second. Full screen erasure is accomplished in 2.8 seconds and selective character erasure requires about 1 msec.
{"title":"High brightness, high resolution, projection CCRT","authors":"L. T. Todd, C.J. Starkey","doi":"10.1109/IEDM.1977.189168","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189168","url":null,"abstract":"A projection cathodochromic CRT (CCRT) has been developed that employs sodalite as the cathodochromic material. The construction of the CCRT is similar to that of the Advent Light Guide projection television tube. Images are written at one electron beam exposure and erased at a higher exposure that heats the screen material above its erase threshold. The optical configuration allows the projection of an image that is written on the cathodochromic screen surface nearest the electron gun. Compared to a conventional CCRT where the image appears on the surface most distant from the electron gun, the Light Guide optical arrangement offers distinct advantages of higher resolution, higher contrast, improved erasure quality, shorter erase time, and longer device lifetime. Over 8000, 9×7 dot matrix characters or detailed graphics can be displayed on a 6'-diagonal image screen with a white-area brightness of 300 fL and a contrast ratio in excess of 6:1. Characters can be written at a rate of 240 per second. Full screen erasure is accomplished in 2.8 seconds and selective character erasure requires about 1 msec.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134099344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189257
R. True
There is an increasing need for helix traveling wave tubes above 18 GHz capable of high volume production, for various military and commercial systems. This paper describes the design and performance of such a tube which produces greater than 20 Watts of K-band CW power at a small signal gain level of 65 dB. Size, particularly length, has been minimized by achievement of a low-voltage, high-perveance design. A low-noise minimum-volume power supply has been developed for this tube. The measured noise floor using a 100 Hz wave analyzer filter bandwidth is greater than 100 dB below the carrier, and inverter spurious lines are typically 65 dB or more below the carrier.
{"title":"A 20 watt 22.5 GHz mini-tube","authors":"R. True","doi":"10.1109/IEDM.1977.189257","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189257","url":null,"abstract":"There is an increasing need for helix traveling wave tubes above 18 GHz capable of high volume production, for various military and commercial systems. This paper describes the design and performance of such a tube which produces greater than 20 Watts of K-band CW power at a small signal gain level of 65 dB. Size, particularly length, has been minimized by achievement of a low-voltage, high-perveance design. A low-noise minimum-volume power supply has been developed for this tube. The measured noise floor using a 100 Hz wave analyzer filter bandwidth is greater than 100 dB below the carrier, and inverter spurious lines are typically 65 dB or more below the carrier.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131654547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189264
A. Christou, Y. Anand, H. Dietrich
Platinum - n type silicon Schottky barrier diodes have demonstrated low noise figure and high burnout performance to both nanosecond and microsecond wide RF pulses at X and Ku-band frequency. Because of high barrier height, they require high local oscillator power to operate as mixers and, therfore, have a limited use. Various high power radar systems have limited local oscillator power but also require high burnout mixer diodes to withstand leakage from protecting limiters. This paper describes the ion implantation technique to reduce the barrier height of platinum-silicon and nickel-silicon Schottky barrier X-band mixer diodes. Low barrier height Schottky barrier diodes have been developed by implanting Antimony in n-type epitaxial silicon at 6 keV-30 keV with fluences between 5× 1011- 6 × 1013cm-2. The metallization systems utilized were Pt-Ti-Mo-Au and Ni-Au where Pt or Ni was the Schottky barrier. Ion implanted silicon, Ni-Au Schottky diodes exhibited a barrier height reduction of .1 eV, a noise figure of 7.5 db at .75 mW power level.
铂- n型硅肖特基势垒二极管在X和ku波段的纳秒和微秒宽射频脉冲下均表现出低噪声系数和高燃灭性能。由于势垒高度高，它们需要高本地振荡器功率作为混频器，因此使用有限。各种高功率雷达系统具有有限的本地振荡器功率，但也需要高燃烬混频器二极管来承受保护限制器的泄漏。本文介绍了降低铂硅和镍硅肖特基势垒x波段混频器二极管势垒高度的离子注入技术。在6 kv -30 keV的n型外延硅中植入锑，制备了低势垒高度肖特基势垒二极管，其影响范围在5× 1011 ~ 6 × 1013cm-2之间。使用的金属化体系是Pt- ti - mo - au和Ni- au，其中Pt或Ni是肖特基势垒。离子注入硅后，Ni-Au肖特基二极管在0.75 mW功率下的势垒高度降低了0.1 eV，噪声系数降低了7.5 db。
{"title":"Low barrier height ion implanted X-band silicon Schottky barrier mixer diodes","authors":"A. Christou, Y. Anand, H. Dietrich","doi":"10.1109/IEDM.1977.189264","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189264","url":null,"abstract":"Platinum - n type silicon Schottky barrier diodes have demonstrated low noise figure and high burnout performance to both nanosecond and microsecond wide RF pulses at X and Ku-band frequency. Because of high barrier height, they require high local oscillator power to operate as mixers and, therfore, have a limited use. Various high power radar systems have limited local oscillator power but also require high burnout mixer diodes to withstand leakage from protecting limiters. This paper describes the ion implantation technique to reduce the barrier height of platinum-silicon and nickel-silicon Schottky barrier X-band mixer diodes. Low barrier height Schottky barrier diodes have been developed by implanting Antimony in n-type epitaxial silicon at 6 keV-30 keV with fluences between 5× 1011- 6 × 1013cm-2. The metallization systems utilized were Pt-Ti-Mo-Au and Ni-Au where Pt or Ni was the Schottky barrier. Ion implanted silicon, Ni-Au Schottky diodes exhibited a barrier height reduction of .1 eV, a noise figure of 7.5 db at .75 mW power level.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133683461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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