Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437341
S. Aman, D. Koretomo, Y. Magari, M. Furuta
Bottom-gate InGaZnOx thin-film transistor (IGZO TFT) with plasma-enhanced chemical vapor deposited (PE-CVD) SiO2 passivation layer were fabricated and their characteristics were analyzed. Two different gas chemistries, SiH4/N2O/N2 and TEOS/02 were explored for the deposition of SiO2 with varying the deposition temperature from 180 to 380°C. Passivation ability of TEOS/O2 based SiO2 is slightly better than that of SiH4/N2O/N2 based SiO2 one when the films were deposited at 180°C, despite an almost identical electrical properties. However, the significant differences were observed when the deposition temperature increased to 300°C or higher. Although the TFTs with the SiO2 passivation deposited using TEOS/02 gas chemistry maintained TFT characteristics, the TFTs with the passivation layer deposited by SiH4/N2O/N2 gas chemistry exhibit conductive behavior.
{"title":"Effect of Deposition Temperature and Source Gas Chemistry in PE-CVD SiO2 Passivation on InGaZnO TFTs","authors":"S. Aman, D. Koretomo, Y. Magari, M. Furuta","doi":"10.23919/AM-FPD.2018.8437341","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437341","url":null,"abstract":"Bottom-gate InGaZnOx thin-film transistor (IGZO TFT) with plasma-enhanced chemical vapor deposited (PE-CVD) SiO<inf>2</inf> passivation layer were fabricated and their characteristics were analyzed. Two different gas chemistries, SiH<inf>4</inf>/N<inf>2</inf>O/N<inf>2</inf> and TEOS/02 were explored for the deposition of SiO<inf>2</inf> with varying the deposition temperature from 180 to 380°C. Passivation ability of TEOS/O<inf>2</inf> based SiO<inf>2</inf> is slightly better than that of SiH<inf>4</inf>/N<inf>2</inf>O/N<inf>2</inf> based SiO<inf>2</inf> one when the films were deposited at 180°C, despite an almost identical electrical properties. However, the significant differences were observed when the deposition temperature increased to 300°C or higher. Although the TFTs with the SiO<inf>2</inf> passivation deposited using TEOS/02 gas chemistry maintained TFT characteristics, the TFTs with the passivation layer deposited by SiH<inf>4</inf>/N<inf>2</inf>O/N<inf>2</inf> gas chemistry exhibit conductive behavior.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117087006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/am-fpd.2018.8437446
N. Pickett, S. Stubbs, N. Gresty
The colour purity and high photoluminescence quantum efficiency of quantum dots has led to their widespread use in the backlight units of liquid crystal displays. However, as industry standards continue to push the boundaries of display technology, new technologies are needed to meet these requirements. Herein, we discuss the development of heavy metal-free quantum dots for use in next-generation electroluminescent displays.
{"title":"Progress in the Development of Heavy Metal-Free Quantum Dots for Electroluminescent Displays","authors":"N. Pickett, S. Stubbs, N. Gresty","doi":"10.23919/am-fpd.2018.8437446","DOIUrl":"https://doi.org/10.23919/am-fpd.2018.8437446","url":null,"abstract":"The colour purity and high photoluminescence quantum efficiency of quantum dots has led to their widespread use in the backlight units of liquid crystal displays. However, as industry standards continue to push the boundaries of display technology, new technologies are needed to meet these requirements. Herein, we discuss the development of heavy metal-free quantum dots for use in next-generation electroluminescent displays.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114379591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437367
T. Arai
The OLED came to attract attention as various information displays. JOLED started the production of middle-sized, high-resolution printed OLED display. We hope our RGB printing method and simple device structure bring an innovation for the display manufacturing and a dawn of the new display era.
{"title":"Innovative Technologies for OLED Display Manufacturing","authors":"T. Arai","doi":"10.23919/AM-FPD.2018.8437367","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437367","url":null,"abstract":"The OLED came to attract attention as various information displays. JOLED started the production of middle-sized, high-resolution printed OLED display. We hope our RGB printing method and simple device structure bring an innovation for the display manufacturing and a dawn of the new display era.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122990112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437407
Yukun Yang, Huiling Lu, X. Deng, Shengdong Zhang
We study the wavelength and geometrical condition (channel width and length) dependent photoresponses of self-aligned top-gate amorphous InZnO (IZO) thin-film transistors (TFTs). Under illumination with wavelength ranging from 350~550 nm, with the decreasing of wavelength $(lambda)$, the responsivity is improved obviously but the subthreshold swing deteriorates significantly. The photoelectric properties of a-IZO TFT under monochromatic illumination with various channel width (W) and length (L) are also investigated. The responsivity (R) is found to increase with the decreasing of L and almost irrelevant to W. High $mathrm{I}_{mathrm{ph}}/mathrm{I}_{mathrm{dark}}$ ratio (3.48×105) and R (287 A/W) were achieved. Further performance enhancement will be led by continuous scaling of the channel length.
{"title":"Effects of Wavelength and Geometrical Condition on Photosensitivity of Self-Aligned Top-Gate Amorphous InZnO Thin Film Transistors","authors":"Yukun Yang, Huiling Lu, X. Deng, Shengdong Zhang","doi":"10.23919/AM-FPD.2018.8437407","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437407","url":null,"abstract":"We study the wavelength and geometrical condition (channel width and length) dependent photoresponses of self-aligned top-gate amorphous InZnO (IZO) thin-film transistors (TFTs). Under illumination with wavelength ranging from 350~550 nm, with the decreasing of wavelength $(lambda)$, the responsivity is improved obviously but the subthreshold swing deteriorates significantly. The photoelectric properties of a-IZO TFT under monochromatic illumination with various channel width (W) and length (L) are also investigated. The responsivity (R) is found to increase with the decreasing of L and almost irrelevant to W. High $mathrm{I}_{mathrm{ph}}/mathrm{I}_{mathrm{dark}}$ ratio (3.48×105) and R (287 A/W) were achieved. Further performance enhancement will be led by continuous scaling of the channel length.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123880435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437440
A. Dmitriev
We show how the combination of nano-optics and the nanoferromagnetism gives rise to the new science of real-time magnetically-tunable optics. One example is of giving the 100%+ dynamic tunability to the chiroptical surfaces by introducing the magnetically-tunable optical elements to the optical nanoantennas. Another theme is adding such nanostructures to the thin-film photovoltaics and glass surfaces for the visible photons and thermal management.
{"title":"Nanoscale tunable optics for photovoltaics and beyond","authors":"A. Dmitriev","doi":"10.23919/AM-FPD.2018.8437440","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437440","url":null,"abstract":"We show how the combination of nano-optics and the nanoferromagnetism gives rise to the new science of real-time magnetically-tunable optics. One example is of giving the 100%+ dynamic tunability to the chiroptical surfaces by introducing the magnetically-tunable optical elements to the optical nanoantennas. Another theme is adding such nanostructures to the thin-film photovoltaics and glass surfaces for the visible photons and thermal management.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121390288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/am-fpd.2018.8437360
{"title":"Copyright","authors":"","doi":"10.23919/am-fpd.2018.8437360","DOIUrl":"https://doi.org/10.23919/am-fpd.2018.8437360","url":null,"abstract":"","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129159418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437369
Yejin Jo, S. Jeong, Jihoon Choi, Youngmin Choi, Sunho Jeong
The recent exploit of strain sensor devices that can readily monitor human body action, has gained tremendous attention, in the field of various wearable electronics and human-machine interfaces applications. In this study, we report a facile way of forming transparent, piezoresistive composite thin-films from a mixture of conductive polymer, elastomeric polymer and surfactnat. Poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), thermoplastic polyurathene (TPU), and capstone 30 are used as a conductive polymer, elastomer and surfactant, respectively. The piezoresistive performances are regulated depending on a compositon of surfactant in PEDOT:PSS-TPU composite thin films. A resistance change as high as 86.5 are obtained when the stretchable composite thin-films are stretched with a strain ranging 0.1 to 0.35, with a transparency of 89.1 % at 550 nm.
{"title":"Transparent Piezoresistive Thin-Films for Strain Sensor Applications","authors":"Yejin Jo, S. Jeong, Jihoon Choi, Youngmin Choi, Sunho Jeong","doi":"10.23919/AM-FPD.2018.8437369","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437369","url":null,"abstract":"The recent exploit of strain sensor devices that can readily monitor human body action, has gained tremendous attention, in the field of various wearable electronics and human-machine interfaces applications. In this study, we report a facile way of forming transparent, piezoresistive composite thin-films from a mixture of conductive polymer, elastomeric polymer and surfactnat. Poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), thermoplastic polyurathene (TPU), and capstone 30 are used as a conductive polymer, elastomer and surfactant, respectively. The piezoresistive performances are regulated depending on a compositon of surfactant in PEDOT:PSS-TPU composite thin films. A resistance change as high as 86.5 are obtained when the stretchable composite thin-films are stretched with a strain ranging 0.1 to 0.35, with a transparency of 89.1 % at 550 nm.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"7 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116356422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437431
R. Yadav, D. Dubey, M. Dembla, S. Chen, Tzu-Wei Liang, J. Jou
Precise optimization and modeling of electron-hole recombination probability in organic light-emitting diodes (OLEDs) are necessary for developing a comprehensive description of their functioning. High-performance organic materials, new device architecture and advanced processing technologies are developed to emerge the development of the OLED community. It is well acknowledged that electrical processes in the OLEDs include three key steps, i.e. charge injection, charge transport, and charge recombination. In this paper, we demonstrate a quantitative approach to investigate the effects of carrier mobility of electron transporting layer (ETL) on electric field and recombination profile across the organic layers of the device using software package SETFOS. The simulation outcomes proposed that a higher electron mobility results in a wider recombination zone in the desired emissive layer (EML), while narrower in case hole mobility is comparatively higher.
{"title":"Carrier Mobility Effect of Electron Transporting Layer on OLED Performance","authors":"R. Yadav, D. Dubey, M. Dembla, S. Chen, Tzu-Wei Liang, J. Jou","doi":"10.23919/AM-FPD.2018.8437431","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437431","url":null,"abstract":"Precise optimization and modeling of electron-hole recombination probability in organic light-emitting diodes (OLEDs) are necessary for developing a comprehensive description of their functioning. High-performance organic materials, new device architecture and advanced processing technologies are developed to emerge the development of the OLED community. It is well acknowledged that electrical processes in the OLEDs include three key steps, i.e. charge injection, charge transport, and charge recombination. In this paper, we demonstrate a quantitative approach to investigate the effects of carrier mobility of electron transporting layer (ETL) on electric field and recombination profile across the organic layers of the device using software package SETFOS. The simulation outcomes proposed that a higher electron mobility results in a wider recombination zone in the desired emissive layer (EML), while narrower in case hole mobility is comparatively higher.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117057233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437377
H. Ohta
Themopower $(S)$ is known as not only an important physical property for thermoelectric energy conversion but also a useful to understand electronic structures of materials since $vert Svert$ strongly depends on the energy derivative of the electronic DOS at around the Fermi energy. In case of bulk system, the slope of log $n$ vs. $S$ relation should be -ln $10cdot k_{mathrm{B}}cdot e^{-1}(equiv-198mu mathrm{VK}^{-1}mathrm{decade}^{-1})$ since parabolic shaped $E-k$ relation at around the conduction band minimum is generally observed. Further, an enhanced $S$ can be observed by modifying the DOS in low-dimensional structures such as two-dimensional electron gas (2DEG). Here I review the electric field modulated $S$ of 2DEGs confined in the several transistors including SrTiO3, BaSnO3, and AlGaN/GaN heterointerfaces.
{"title":"Electric Field Thermopower Modulation of Two-Dimensional Electron Gas","authors":"H. Ohta","doi":"10.23919/AM-FPD.2018.8437377","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437377","url":null,"abstract":"Themopower <tex>$(S)$</tex> is known as not only an important physical property for thermoelectric energy conversion but also a useful to understand electronic structures of materials since <tex>$vert Svert$</tex> strongly depends on the energy derivative of the electronic DOS at around the Fermi energy. In case of bulk system, the slope of log <tex>$n$</tex> vs. <tex>$S$</tex> relation should be -ln <tex>$10cdot k_{mathrm{B}}cdot e^{-1}(equiv-198mu mathrm{VK}^{-1}mathrm{decade}^{-1})$</tex> since parabolic shaped <tex>$E-k$</tex> relation at around the conduction band minimum is generally observed. Further, an enhanced <tex>$S$</tex> can be observed by modifying the DOS in low-dimensional structures such as two-dimensional electron gas (2DEG). Here I review the electric field modulated <tex>$S$</tex> of 2DEGs confined in the several transistors including SrTiO<inf>3</inf>, BaSnO3, and AlGaN/GaN heterointerfaces.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121963639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437381
Jiaqing Zhao, Qiaofeng Li, Wei Tang, Xiaojun Guo
Low voltage field effect transistors (OFETs) are achieved by reducing the sub-gap density of states (DOS) at the channel instead of enlarging the gate dielectric capacitance. Further work realizes both large gate dielectric capacitance via low-k/high-k bilayer gate dielectric and significantly reduced sub-gate DOS at the channel in one device structure for steep subthreshold swing OFETs with all solution/printing processes. The use of such steep subthreshold swing OFETs for high sensitivity, low power ion sensing is presented.
{"title":"Solution Processed Steep Subthreshold OFETs for Low-power and High Sensitivity Bio-chemical Sensing","authors":"Jiaqing Zhao, Qiaofeng Li, Wei Tang, Xiaojun Guo","doi":"10.23919/AM-FPD.2018.8437381","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437381","url":null,"abstract":"Low voltage field effect transistors (OFETs) are achieved by reducing the sub-gap density of states (DOS) at the channel instead of enlarging the gate dielectric capacitance. Further work realizes both large gate dielectric capacitance via low-k/high-k bilayer gate dielectric and significantly reduced sub-gate DOS at the channel in one device structure for steep subthreshold swing OFETs with all solution/printing processes. The use of such steep subthreshold swing OFETs for high sensitivity, low power ion sensing is presented.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122092912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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