Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437429
R. Tanaka, Isao Horiuchi, Yukio Mogi, Y. Hiroshima, Y. Nakashima, M. Kimura
We have developed a cross-point device using a Ta2O5/Ia layer for synapse elements in neural networks. Horizontal 80 and vertical 80 platinum lines and a Ta2O5/Ia layer between them make 6400 cross-point synapses integrated on a glass substrate. The electrical conductance gradually degrades by flowing current, which is available for modified Hebbian learning. We found that a neural network using the cross-point synapses are able to recognize multiple letters.
{"title":"Cross-Point Device using Ta2O5/Ta Layer for Synapse Element in Neural Network","authors":"R. Tanaka, Isao Horiuchi, Yukio Mogi, Y. Hiroshima, Y. Nakashima, M. Kimura","doi":"10.23919/AM-FPD.2018.8437429","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437429","url":null,"abstract":"We have developed a cross-point device using a Ta2O5/Ia layer for synapse elements in neural networks. Horizontal 80 and vertical 80 platinum lines and a Ta2O5/Ia layer between them make 6400 cross-point synapses integrated on a glass substrate. The electrical conductance gradually degrades by flowing current, which is available for modified Hebbian learning. We found that a neural network using the cross-point synapses are able to recognize multiple letters.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116048608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437428
Wan-Yun Yang, R. A. Kumar Yadav, Deepak kumar Dubey, Chu-Hsiang Hsu, Yao-Yu Lee, Tzu-Wei Liang, J. Jou
In the present work, we study a comprehensive model to quantitatively investigate the position progression of electron transporting materials (ETMs) on exciton recombination probability and electric field distribution across the emissive and electron transport layer in dual-emissive layer organic light-emitting diode (OLED) devices via electrical simulation. The simulation outcomes show that the recombination profile across the emissive layers (EMLs) is highly influenced by the structural arrangement of ETMs. Moreover, experiment results also reflect similar behavior traits.
{"title":"High-Efficiency Organic Light-Emitting Diodes with a Complete Cascading Carrier Injection Structure","authors":"Wan-Yun Yang, R. A. Kumar Yadav, Deepak kumar Dubey, Chu-Hsiang Hsu, Yao-Yu Lee, Tzu-Wei Liang, J. Jou","doi":"10.23919/AM-FPD.2018.8437428","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437428","url":null,"abstract":"In the present work, we study a comprehensive model to quantitatively investigate the position progression of electron transporting materials (ETMs) on exciton recombination probability and electric field distribution across the emissive and electron transport layer in dual-emissive layer organic light-emitting diode (OLED) devices via electrical simulation. The simulation outcomes show that the recombination profile across the emissive layers (EMLs) is highly influenced by the structural arrangement of ETMs. Moreover, experiment results also reflect similar behavior traits.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122789457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437389
Bukke Ravindra Naik, M. N. Naik, C. Avis, Jin Jang
In the present work, we studied the effect of purification of IZTO precursor on the performance of oxide TFT using high-k ZrOx gate insulator. The unpurified IZTO TFT showed the saturation mobility (μsat) of 2.86 cm2/V, threshold voltage (Vth) of 0.43 V, subthreshold swing (SS) of 112 mV/dec., and a current ratio ION/IOFF of ~108. On the other hand, the purified IZTO TFT exhibited the μsat of 5.22 cm2/V, Vth of 0.36 V, SS of 90 mV/dec., and an ION/IOFF of ~108. The results suggest that the purification of oxide semiconductor precursor is important for high performance TFT.
{"title":"Enhancement of TFT performance by purification of indium-zinc-tin oxide","authors":"Bukke Ravindra Naik, M. N. Naik, C. Avis, Jin Jang","doi":"10.23919/AM-FPD.2018.8437389","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437389","url":null,"abstract":"In the present work, we studied the effect of purification of IZTO precursor on the performance of oxide TFT using high-k ZrO<inf>x</inf> gate insulator. The unpurified IZTO TFT showed the saturation mobility (μ<inf>sat</inf>) of 2.86 cm<sup>2</sup>/V, threshold voltage (V<inf>th</inf>) of 0.43 V, subthreshold swing (SS) of 112 mV/dec., and a current ratio I<inf>ON</inf>/I<inf>OFF</inf> of ~10<sup>8</sup>. On the other hand, the purified IZTO TFT exhibited the μ<inf>sat</inf> of 5.22 cm<sup>2</sup>/V, V<inf>th</inf> of 0.36 V, SS of 90 mV/dec., and an I<inf>ON</inf>/I<inf>OFF</inf> of ~10<sup>8</sup>. The results suggest that the purification of oxide semiconductor precursor is important for high performance TFT.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127778569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/am-fpd.2018.8437446
N. Pickett, S. Stubbs, N. Gresty
The colour purity and high photoluminescence quantum efficiency of quantum dots has led to their widespread use in the backlight units of liquid crystal displays. However, as industry standards continue to push the boundaries of display technology, new technologies are needed to meet these requirements. Herein, we discuss the development of heavy metal-free quantum dots for use in next-generation electroluminescent displays.
{"title":"Progress in the Development of Heavy Metal-Free Quantum Dots for Electroluminescent Displays","authors":"N. Pickett, S. Stubbs, N. Gresty","doi":"10.23919/am-fpd.2018.8437446","DOIUrl":"https://doi.org/10.23919/am-fpd.2018.8437446","url":null,"abstract":"The colour purity and high photoluminescence quantum efficiency of quantum dots has led to their widespread use in the backlight units of liquid crystal displays. However, as industry standards continue to push the boundaries of display technology, new technologies are needed to meet these requirements. Herein, we discuss the development of heavy metal-free quantum dots for use in next-generation electroluminescent displays.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114379591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437421
H. Segawa
Next-generation photovoltaics based on new concepts and/or novel materials have been currently attracting wide interests. Among them, nano-structured organic solar cells shows potential for the low-cost solar cells. In this lecture, several types of hybrid photovoltaics using nano-structured organic solar cells are summarized.
{"title":"Hybrid Photovoltaics Based on Nano-structured Organic Solar Cells","authors":"H. Segawa","doi":"10.23919/AM-FPD.2018.8437421","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437421","url":null,"abstract":"Next-generation photovoltaics based on new concepts and/or novel materials have been currently attracting wide interests. Among them, nano-structured organic solar cells shows potential for the low-cost solar cells. In this lecture, several types of hybrid photovoltaics using nano-structured organic solar cells are summarized.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116956971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437341
S. Aman, D. Koretomo, Y. Magari, M. Furuta
Bottom-gate InGaZnOx thin-film transistor (IGZO TFT) with plasma-enhanced chemical vapor deposited (PE-CVD) SiO2 passivation layer were fabricated and their characteristics were analyzed. Two different gas chemistries, SiH4/N2O/N2 and TEOS/02 were explored for the deposition of SiO2 with varying the deposition temperature from 180 to 380°C. Passivation ability of TEOS/O2 based SiO2 is slightly better than that of SiH4/N2O/N2 based SiO2 one when the films were deposited at 180°C, despite an almost identical electrical properties. However, the significant differences were observed when the deposition temperature increased to 300°C or higher. Although the TFTs with the SiO2 passivation deposited using TEOS/02 gas chemistry maintained TFT characteristics, the TFTs with the passivation layer deposited by SiH4/N2O/N2 gas chemistry exhibit conductive behavior.
{"title":"Effect of Deposition Temperature and Source Gas Chemistry in PE-CVD SiO2 Passivation on InGaZnO TFTs","authors":"S. Aman, D. Koretomo, Y. Magari, M. Furuta","doi":"10.23919/AM-FPD.2018.8437341","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437341","url":null,"abstract":"Bottom-gate InGaZnOx thin-film transistor (IGZO TFT) with plasma-enhanced chemical vapor deposited (PE-CVD) SiO<inf>2</inf> passivation layer were fabricated and their characteristics were analyzed. Two different gas chemistries, SiH<inf>4</inf>/N<inf>2</inf>O/N<inf>2</inf> and TEOS/02 were explored for the deposition of SiO<inf>2</inf> with varying the deposition temperature from 180 to 380°C. Passivation ability of TEOS/O<inf>2</inf> based SiO<inf>2</inf> is slightly better than that of SiH<inf>4</inf>/N<inf>2</inf>O/N<inf>2</inf> based SiO<inf>2</inf> one when the films were deposited at 180°C, despite an almost identical electrical properties. However, the significant differences were observed when the deposition temperature increased to 300°C or higher. Although the TFTs with the SiO<inf>2</inf> passivation deposited using TEOS/02 gas chemistry maintained TFT characteristics, the TFTs with the passivation layer deposited by SiH<inf>4</inf>/N<inf>2</inf>O/N<inf>2</inf> gas chemistry exhibit conductive behavior.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117087006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437382
H. Tahara, Takumi Yamada, Taketo Handa, Y. Kanemitsu
Recently, lead halide perovskites are attracting much attention as excellent optical materials for thin film solar cells, light-emitting diodes, lasers, and optical switches. Besides their optical properties suitable for these optoelectronic devices, the lead halide perovskites also possess unique nonlinear optical properties. In this invited paper, we summarize our recent studies on the nonlinear optical properties of lead halide perovskites, which provide deep insights into the photophysics of lead halide perovskites.
{"title":"Nonlinear optical properties of lead halide perovskites","authors":"H. Tahara, Takumi Yamada, Taketo Handa, Y. Kanemitsu","doi":"10.23919/AM-FPD.2018.8437382","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437382","url":null,"abstract":"Recently, lead halide perovskites are attracting much attention as excellent optical materials for thin film solar cells, light-emitting diodes, lasers, and optical switches. Besides their optical properties suitable for these optoelectronic devices, the lead halide perovskites also possess unique nonlinear optical properties. In this invited paper, we summarize our recent studies on the nonlinear optical properties of lead halide perovskites, which provide deep insights into the photophysics of lead halide perovskites.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115405246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437367
T. Arai
The OLED came to attract attention as various information displays. JOLED started the production of middle-sized, high-resolution printed OLED display. We hope our RGB printing method and simple device structure bring an innovation for the display manufacturing and a dawn of the new display era.
{"title":"Innovative Technologies for OLED Display Manufacturing","authors":"T. Arai","doi":"10.23919/AM-FPD.2018.8437367","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437367","url":null,"abstract":"The OLED came to attract attention as various information displays. JOLED started the production of middle-sized, high-resolution printed OLED display. We hope our RGB printing method and simple device structure bring an innovation for the display manufacturing and a dawn of the new display era.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122990112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437413
B. Lee, Jae Min Byun, Sangsig Kim, Sang Yeol Lee
Various metal capping (MC) layer were deposited on the amorphous SiZnSnO channel layer to ensure high electrical properties. In addition, it was confirmed that the electrical characteristics change depending on the material of each MC layer. This effect is analyzed as a phenomenon which is caused by the difference between the work function of the MC layer and the work function of the channel layer. When the work function of the MC layer is smaller than the work function of the channel layer, the electrons are injected into the channel layer from the MC layer, so that higher electrical characteristics can be obtained. As a result, the electrical characteristics can be controlled by a simple change of the MC layer, and the logic circuits such as NOT, NAND, and NOR can be simply fabricated.
{"title":"Thin Film Logic Circuit with Metal Capping Layered amorphous SiZnSnO thin-film transistors","authors":"B. Lee, Jae Min Byun, Sangsig Kim, Sang Yeol Lee","doi":"10.23919/AM-FPD.2018.8437413","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437413","url":null,"abstract":"Various metal capping (MC) layer were deposited on the amorphous SiZnSnO channel layer to ensure high electrical properties. In addition, it was confirmed that the electrical characteristics change depending on the material of each MC layer. This effect is analyzed as a phenomenon which is caused by the difference between the work function of the MC layer and the work function of the channel layer. When the work function of the MC layer is smaller than the work function of the channel layer, the electrons are injected into the channel layer from the MC layer, so that higher electrical characteristics can be obtained. As a result, the electrical characteristics can be controlled by a simple change of the MC layer, and the logic circuits such as NOT, NAND, and NOR can be simply fabricated.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129699647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/am-fpd.2018.8437442
Kyoohee Woo, Zhaoyang Zhong, Hyunchang Kim, Sin Kwon, Dongwoo Kang, Seung-Hyun Lee, Taik-Min Lee, Jeongdai Jo
Recently, various electronic devices, such as foldable displays, disposable sensors, and flexible batteries have been widely demanded. Accordingly, we tried to create extremely flexible conductive features that can tolerate severe mechanical stress using photonic sintering process. Additionally, based on significant differences in adhesion between light-exposed and non-exposed regions with respect to the underlying substrate, it was confmned that patterning of conductive electrodes could be easily accomplished on large area. The potential of IPL treated electronic conductive features were clearly demonstrated by fabricating various emerging devices such as a light-emitting diode circuit and a flexible transparent heater with unimpaired functionality under various deformations. Our results facilitate their widespread application in future electronics, such as wearable e-skins, smart textiles and foldable display.
{"title":"Selective Intense Light-Induced High-Performance Washable Transparent Electrodes","authors":"Kyoohee Woo, Zhaoyang Zhong, Hyunchang Kim, Sin Kwon, Dongwoo Kang, Seung-Hyun Lee, Taik-Min Lee, Jeongdai Jo","doi":"10.23919/am-fpd.2018.8437442","DOIUrl":"https://doi.org/10.23919/am-fpd.2018.8437442","url":null,"abstract":"Recently, various electronic devices, such as foldable displays, disposable sensors, and flexible batteries have been widely demanded. Accordingly, we tried to create extremely flexible conductive features that can tolerate severe mechanical stress using photonic sintering process. Additionally, based on significant differences in adhesion between light-exposed and non-exposed regions with respect to the underlying substrate, it was confmned that patterning of conductive electrodes could be easily accomplished on large area. The potential of IPL treated electronic conductive features were clearly demonstrated by fabricating various emerging devices such as a light-emitting diode circuit and a flexible transparent heater with unimpaired functionality under various deformations. Our results facilitate their widespread application in future electronics, such as wearable e-skins, smart textiles and foldable display.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128275214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：