Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437374
M. Lin
Flexible Indium Tin Oxide (ITO)-free perovskite solar cells with an imprinted silver nanowire (AgNW) transparent electrode are demonstrated. The AgNWs were spin-coated on flexible substrate and optimized according to the transmission and sheet resistance Rs of electrode film. Following, the solution-processed AgNWs were imprinted on the substrate which not only can improve the elastic modulus of film but also enhance the mechanical properties of the electrode. The modified AgNW electrode will possess strong endurance ability against resonant cleaning process. The power conversion efficiency (PCE) of flexible ITO-free perovskite solar cells based on imprinted AgNW electrode can reach around 8.10%.
{"title":"Flexible ITO-Free Perovskite Solar Cells","authors":"M. Lin","doi":"10.23919/AM-FPD.2018.8437374","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437374","url":null,"abstract":"Flexible Indium Tin Oxide (ITO)-free perovskite solar cells with an imprinted silver nanowire (AgNW) transparent electrode are demonstrated. The AgNWs were spin-coated on flexible substrate and optimized according to the transmission and sheet resistance Rs of electrode film. Following, the solution-processed AgNWs were imprinted on the substrate which not only can improve the elastic modulus of film but also enhance the mechanical properties of the electrode. The modified AgNW electrode will possess strong endurance ability against resonant cleaning process. The power conversion efficiency (PCE) of flexible ITO-free perovskite solar cells based on imprinted AgNW electrode can reach around 8.10%.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115362474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437366
H. Jang, Hyeong-Rae Kim, Ji-Hee Yang, C. Byun, Sung‐Min Yoon
Effects of ALDsgrown Al2O3 buffer layer on the device characteristics of the flexible amorphous InGaZnO (IGZO) thin film transistors (TFTs) fabricated on ultra-thin polyimide films were investigated. The TFT with a buffer layer exhibited a saturation mobility of 8.6 cm2/Vs and a subthreshold swing of 0.16 V/dec, which was superior to those of the TFT without a buffer layer. Furthermore, under negative bias temperature stress, the turn-on voltage (Von) instabilities for the TFTs with and without the buffer layer were estimated to be −1.0 and −13.2 V, respectively, owing to the adsorption of water molecules on the PI surface resulting in positively-charged surface. Flexibility of the fabricated IGZO TFT was also evaluated. The Von experienced only a slight negative shift even under the severe bending condition of a curvature radius of 1 mm.
{"title":"Impact of Al2O3 Buffer Layer on Ultra-Thin Flexible Polyimide Substrates for Transparent and Flexible InGaZnO Thin Film Transistors","authors":"H. Jang, Hyeong-Rae Kim, Ji-Hee Yang, C. Byun, Sung‐Min Yoon","doi":"10.23919/AM-FPD.2018.8437366","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437366","url":null,"abstract":"Effects of ALDsgrown Al2O3 buffer layer on the device characteristics of the flexible amorphous InGaZnO (IGZO) thin film transistors (TFTs) fabricated on ultra-thin polyimide films were investigated. The TFT with a buffer layer exhibited a saturation mobility of 8.6 cm2/Vs and a subthreshold swing of 0.16 V/dec, which was superior to those of the TFT without a buffer layer. Furthermore, under negative bias temperature stress, the turn-on voltage (Von) instabilities for the TFTs with and without the buffer layer were estimated to be −1.0 and −13.2 V, respectively, owing to the adsorption of water molecules on the PI surface resulting in positively-charged surface. Flexibility of the fabricated IGZO TFT was also evaluated. The Von experienced only a slight negative shift even under the severe bending condition of a curvature radius of 1 mm.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130140309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437438
Dong-Jin Kim, Ho-Nyeon Lee
We demonstrate the enhanced efficiency of inorganic/organic hybrid quantum-dot light-emitting diodes (QD-LEDs) by adopting WO3/zinc-tin-oxide (ZTO) as an electron-transporting layer (ETL). The relationship between the ETL properties and device performance was explained by the effect of the WO3 layer on electron transport, which was investigated using thin film analysis methods. A maximum luminance of 700 cd/m2 and current efficiency of 0.43 cd/A were obtained from a QD-LED with 40-nm-thick WO3. The current efficiency was more than twice that of a device without a WO3 layer.
{"title":"Inverted Quantum-Dot Light-Emitting Diodes with WO3/Zinc-Tin-Oxide Electron Transporting Layers","authors":"Dong-Jin Kim, Ho-Nyeon Lee","doi":"10.23919/AM-FPD.2018.8437438","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437438","url":null,"abstract":"We demonstrate the enhanced efficiency of inorganic/organic hybrid quantum-dot light-emitting diodes (QD-LEDs) by adopting WO3/zinc-tin-oxide (ZTO) as an electron-transporting layer (ETL). The relationship between the ETL properties and device performance was explained by the effect of the WO3 layer on electron transport, which was investigated using thin film analysis methods. A maximum luminance of 700 cd/m2 and current efficiency of 0.43 cd/A were obtained from a QD-LED with 40-nm-thick WO3. The current efficiency was more than twice that of a device without a WO3 layer.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"322 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116432189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437425
R. Miyazaki, Naoki Nishiguchi, Hiroki Utsumi, A. Hara
We previously reported the fabrication of self-aligned planar double-gate p-channel (p-ch) polycrystalline germanium-tin (poly-Gel-xSnx) thin-film transistors (TFTs) via copper metal-induced crystallization at 500°C. To improve their performance, it is necessary to evaluate the controllability of the threshold voltages (Vth) for the top gate (TG) and bottom gate (BG), respectively. For this purpose, a four-terminal p-ch poly-Gel-xSnx TFT was fabricated and characterized. Our studies revealed that the values of Ύ, where y= Vth/VCG and VCG is the control gate voltage, for the TG and BG drives were nearly the same, thus, indicating the similar quality of the TG and BG stacks.
{"title":"Self-Aligned Four-Terminal P-Channel Cu-MIC Poly-Ge1-xSnxThin-Film Transistors on a Glass Substrate","authors":"R. Miyazaki, Naoki Nishiguchi, Hiroki Utsumi, A. Hara","doi":"10.23919/AM-FPD.2018.8437425","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437425","url":null,"abstract":"We previously reported the fabrication of self-aligned planar double-gate p-channel (p-ch) polycrystalline germanium-tin (poly-Ge<inf>l-x</inf>Sn<inf>x</inf>) thin-film transistors (TFTs) via copper metal-induced crystallization at 500°C. To improve their performance, it is necessary to evaluate the controllability of the threshold voltages (V<inf>th</inf>) for the top gate (TG) and bottom gate (BG), respectively. For this purpose, a four-terminal p-ch poly-Ge<inf>l-x</inf>Sn<inf>x</inf> TFT was fabricated and characterized. Our studies revealed that the values of Ύ, where y= V<inf>th</inf>/V<inf>CG</inf> and V<inf>CG</inf> is the control gate voltage, for the TG and BG drives were nearly the same, thus, indicating the similar quality of the TG and BG stacks.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126838847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437385
Ji-Hee Yang, G. Kim, Sung‐Min Yoon
Oxide-semiconductor-based charge-trap memory thin-film transistors were analyzed in order to figure out the origins of the electrical failure under bending situations. Accurate evaluation on the transfer characteristics and visual inspection of electronic devices on plastic substrate were conducted by using modified bending jigs. Electrical failures of the devices were found to be attributed to the micro-cracks developed in inorganic barriers corresponding to the back-channel regions. Variations in threshold voltage and program speed were also observed before the final failure. These results will be of great help in designing flexible nonvolatile memory devices because there are few researches on the charge-trap mechanism affected by the mechanical stress.
{"title":"Investigation of Mechanical-Stress-Induced Electrical Failure of Oxide-Based Flexible Charge-Trap Memory Thin-Film Transistors Fabricated on Plastic Substrates","authors":"Ji-Hee Yang, G. Kim, Sung‐Min Yoon","doi":"10.23919/AM-FPD.2018.8437385","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437385","url":null,"abstract":"Oxide-semiconductor-based charge-trap memory thin-film transistors were analyzed in order to figure out the origins of the electrical failure under bending situations. Accurate evaluation on the transfer characteristics and visual inspection of electronic devices on plastic substrate were conducted by using modified bending jigs. Electrical failures of the devices were found to be attributed to the micro-cracks developed in inorganic barriers corresponding to the back-channel regions. Variations in threshold voltage and program speed were also observed before the final failure. These results will be of great help in designing flexible nonvolatile memory devices because there are few researches on the charge-trap mechanism affected by the mechanical stress.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"2017 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128039467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437402
Wen-Ching Chiu, Chih-Cheng Hsu, P. Lai, Ming-Xun Wang, Chih-Lung Lin
This work proposes a novel gate driver circuit based on hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) technologies. Since the gate voltage of the driving TFT is increased by the proposed pre-bootstrapping structure for enhancing its driving capability, the issue of low mobility of a-Si:H TFT is improved. Thus, the high charging and discharging speeds of the output node are certified. Simulation results show that the voltage levels at the gate node of the driving TFT are increased to 21.49 V and43.03 V before the output waveform starts to rise and fall, ensuring that the proposed circuit can fast charge and discharge the output node through the driving TFT.
{"title":"Novel a-Si:H Gate Driver Circuit with High Charging and Discharging Speeds for Use in High-resolution Liquid-Crystal Displays","authors":"Wen-Ching Chiu, Chih-Cheng Hsu, P. Lai, Ming-Xun Wang, Chih-Lung Lin","doi":"10.23919/AM-FPD.2018.8437402","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437402","url":null,"abstract":"This work proposes a novel gate driver circuit based on hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) technologies. Since the gate voltage of the driving TFT is increased by the proposed pre-bootstrapping structure for enhancing its driving capability, the issue of low mobility of a-Si:H TFT is improved. Thus, the high charging and discharging speeds of the output node are certified. Simulation results show that the voltage levels at the gate node of the driving TFT are increased to 21.49 V and43.03 V before the output waveform starts to rise and fall, ensuring that the proposed circuit can fast charge and discharge the output node through the driving TFT.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127968938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437363
H. Nakanotani
Organic light-emitting diodes (OLEDs) possess extremely attractive properties such as highly efficient electroluminescence (EL), good flexibility, light weight, and the possibility of solution processing and low-cost manufacture, making them fascinating for advanced flexible displays and lighting. Since the recombination of four holes and electrons yields one singlet exciton and three triplet excitons based on the rules of spin statistics in organic semiconductors, exciton production efficiency in organic semiconductors under electrical excitation is a crucial parameter for realizing high-performance OLEDs. In this talk, our recent work on the manipulation of spin-flip processes in molecular systems exhibiting E-type delayed fluorescence toward to the realization of 100% internal EL quantum efficiency will be discussed.
{"title":"Organic light-emitting devices with E-type delayed fluorescence emitters","authors":"H. Nakanotani","doi":"10.23919/AM-FPD.2018.8437363","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437363","url":null,"abstract":"Organic light-emitting diodes (OLEDs) possess extremely attractive properties such as highly efficient electroluminescence (EL), good flexibility, light weight, and the possibility of solution processing and low-cost manufacture, making them fascinating for advanced flexible displays and lighting. Since the recombination of four holes and electrons yields one singlet exciton and three triplet excitons based on the rules of spin statistics in organic semiconductors, exciton production efficiency in organic semiconductors under electrical excitation is a crucial parameter for realizing high-performance OLEDs. In this talk, our recent work on the manipulation of spin-flip processes in molecular systems exhibiting E-type delayed fluorescence toward to the realization of 100% internal EL quantum efficiency will be discussed.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121101508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/am-fpd.2018.8437386
Sin Kwon, Dongha Song, Hyuntae Kim, Moonyong Lee, Kyoohee Woo
This paper presents the development of roll-to-roll thermal evaporation equipment for flexible OLED devices. Under high vacuum conditions, the continuous movement of the flexible film was precisely controlled by the developed roll-to-roll method. And, it has been shown that flexible OLED samples can be fabricated by continuously and sequentially depositing organic/inorganic multi layers.
{"title":"Development of Roll-to-Roll Multi-layer Thermal Evaporation System for Flexible OLED Devices","authors":"Sin Kwon, Dongha Song, Hyuntae Kim, Moonyong Lee, Kyoohee Woo","doi":"10.23919/am-fpd.2018.8437386","DOIUrl":"https://doi.org/10.23919/am-fpd.2018.8437386","url":null,"abstract":"This paper presents the development of roll-to-roll thermal evaporation equipment for flexible OLED devices. Under high vacuum conditions, the continuous movement of the flexible film was precisely controlled by the developed roll-to-roll method. And, it has been shown that flexible OLED samples can be fabricated by continuously and sequentially depositing organic/inorganic multi layers.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114243170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437437
S. Yoo, Seungwon Lee, Junghoo Yun, Hanul Moon
This talk presents highly flexible organic non-volatile memory devices that can be programmed at a reasonably low voltage yet exhibit long retention. With tunneling-limited polymeric dielectric layers prepared by initiated chemical vapor deposition (iCVD) techniques, we carefully engineer tunneling and blocking dielectric layers (TDL and BDL) so that charges can tunnel exclusively through TDL during both programming and erasing operations while being retained within floating gate without leakage in the other cases. With the proposed approach, we demonstrate non-volatile memories that can be fold down to the bending radius as small as 0.2 mm.
{"title":"Flexible organic non-volatile memory with long retention","authors":"S. Yoo, Seungwon Lee, Junghoo Yun, Hanul Moon","doi":"10.23919/AM-FPD.2018.8437437","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437437","url":null,"abstract":"This talk presents highly flexible organic non-volatile memory devices that can be programmed at a reasonably low voltage yet exhibit long retention. With tunneling-limited polymeric dielectric layers prepared by initiated chemical vapor deposition (iCVD) techniques, we carefully engineer tunneling and blocking dielectric layers (TDL and BDL) so that charges can tunnel exclusively through TDL during both programming and erasing operations while being retained within floating gate without leakage in the other cases. With the proposed approach, we demonstrate non-volatile memories that can be fold down to the bending radius as small as 0.2 mm.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114750704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437435
H. Yoshida, SeongYong Cho, M. One, M. Ozaki
A hologram element that is transparent to visible light is demonstrated using a cholesteric liquid crystal. The operation of the hologram is based on the Berry phase effect in which the phase of reflected light varies depending on the orientation direction of the liquid crystal director on the substrate surface. Transparency in the visible is achieved by employing a cholesteric material with the reflection band in the infrared. Because of the sinusoidal modulation of the dielectric tensor, higher order reflections are suppressed for normal incidence and occurs over a very narrow region even for oblique incidence. This leads to a novel class of holographic optical elements where the element appears completely transparent when information is encoded in its phase.
{"title":"Concealed Holograms based on Cholesteric Liquid Crystals","authors":"H. Yoshida, SeongYong Cho, M. One, M. Ozaki","doi":"10.23919/AM-FPD.2018.8437435","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437435","url":null,"abstract":"A hologram element that is transparent to visible light is demonstrated using a cholesteric liquid crystal. The operation of the hologram is based on the Berry phase effect in which the phase of reflected light varies depending on the orientation direction of the liquid crystal director on the substrate surface. Transparency in the visible is achieved by employing a cholesteric material with the reflection band in the infrared. Because of the sinusoidal modulation of the dielectric tensor, higher order reflections are suppressed for normal incidence and occurs over a very narrow region even for oblique incidence. This leads to a novel class of holographic optical elements where the element appears completely transparent when information is encoded in its phase.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132318298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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